JPS63283078A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS63283078A JPS63283078A JP62118003A JP11800387A JPS63283078A JP S63283078 A JPS63283078 A JP S63283078A JP 62118003 A JP62118003 A JP 62118003A JP 11800387 A JP11800387 A JP 11800387A JP S63283078 A JPS63283078 A JP S63283078A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving surface
- surface electrode
- semiconductor film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000005381 potential energy Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
イ）産業上の利用分野
本発明は、太陽電池や光センサ等に利用される光起電力
装置に関する０
（ロ） 従来の技術
薄嗅状の光電変換素子音用いた光起電力装置の昨型例が
特公昭５３−３７７１８号公報に開示されている。第１
図は、斯る先行技術に開示された光起電力装置を示し、
光入射側からＳｎＯ２、ＩＴＯ等の透光性導電酸化物（
ＴＣＯ）の受光面電極中、ｐｎ接合或いはｐｌｎ 接合
等の半導体接合？備えた非晶質シリコンを主体とする半
導体膜１３＋及びＡ１等の金属層を含む背面電極１４１
が順次積層配置されている。特開昭５７−９５６７７号
公報に開示された光起電力装置は、上記半導体接合を備
えた半導体ＩＩ＆！＋３１において、光入射側の受光面
電極（１１に接して配置されるｐ型或いはｎ型不純物層
として背面側の主に光電変換動作する層に較べ光学的バ
ンドギヤ、・Ｉプの広い非晶質シリコンカーバイド層を
用い、斯る層での光吸収を減じる所謂窓効果を得る構造
となっている。[Detailed Description of the Invention] A) Industrial Application Field The present invention relates to photovoltaic devices used in solar cells, optical sensors, etc. A recent example of a photovoltaic device is disclosed in Japanese Patent Publication No. 53-37718. 1st
The figure shows a photovoltaic device disclosed in such prior art,
Transparent conductive oxides such as SnO2 and ITO (
Semiconductor junction such as pn junction or pln junction in the light receiving surface electrode of TCO)? A back electrode 141 including a semiconductor film 13+ mainly made of amorphous silicon and a metal layer such as A1.
are arranged in a stacked manner. The photovoltaic device disclosed in Japanese Unexamined Patent Publication No. 57-95677 is a semiconductor II &! equipped with the above-mentioned semiconductor junction. +31, the light receiving surface electrode (11) on the light incident side is a p-type or n-type impurity layer disposed in contact with the optical band gear, and an amorphous material with a wide Ip compared to the layer on the back side that mainly performs photoelectric conversion. The structure uses a silicon carbide layer to obtain a so-called window effect that reduces light absorption in such a layer.
然し乍ら、これら光起電力装置にあっては、受光面電極
と導電型不純物層との界面に存在する多数の欠陥のため
に、界面付近のポテンシャル・エネルギが低下し、光電
変換特性における出力電圧全減少せしめる原因となって
いた。斯る出力電圧の減少？防ぐ方策として、導電型不
純物層における導電型決定不純物のドープ量全多くしへ
ビードープとしたり、また受光面電極との界面に絶縁物
を配挿する構造が試みられた。However, in these photovoltaic devices, due to the large number of defects existing at the interface between the light-receiving surface electrode and the conductive impurity layer, the potential energy near the interface decreases, and the total output voltage in the photoelectric conversion characteristics decreases. This was the cause of the decrease. Such a decrease in output voltage? As measures to prevent this, attempts have been made to increase the total amount of doping of the conductivity type determining impurity in the conductivity type impurity layer, making it heavy doped, and to provide a structure in which an insulator is placed at the interface with the light-receiving surface electrode.
ところが、斯る構造によれば、ヘビードープとすると光
吸収量が増大するために、窓層としての作用が損なわれ
る結果、出力電流が減少し、また界面絶Ｒｎは直列抵抗
成分全形成して電力損失の原因となる、
ｌ／ｉ 発明が解決しようとする問題点本発明は上述
の如く光吸収量の増大による出力電流の大幅な減少や、
直列抵抗成分による電力損失を実質的に招くことなく受
光面電極と半導体験との界面におけるポテンシャルエネ
ルギの低下？解決しようとするものである□
（２）間９点全解決するための手段
本発明光起電力装置は上記問題点解決すべく、光入射側
から受光面電極、絶縁物、半導体接合金偏えた半導体験
及び背面電極全順次配置すると共に、上記絶縁膜全挾ん
で対向する受光面電極と半導体−全部分的に直接当接さ
せたことを特徴とする。However, in such a structure, when heavily doped, the amount of light absorption increases, which impairs its function as a window layer, resulting in a decrease in output current, and the interface disconnection Rn results in the formation of all series resistance components, resulting in a loss of power. Problems to be Solved by the Invention As mentioned above, the present invention solves the problem of a significant decrease in output current due to an increase in the amount of light absorption,
Reducing the potential energy at the interface between the light-receiving surface electrode and the semiconductor layer without substantially incurring power loss due to the series resistance component? □ (2) Means for solving all 9 points In order to solve the above problems, the photovoltaic device of the present invention has a light-receiving surface electrode, an insulator, and a semiconductor bonded metal which are biased from the light incident side. The semiconductor device is characterized in that the semiconductor layer and the back electrode are all arranged in sequence, and the semiconductor layer is partially brought into direct contact with the light-receiving surface electrode that faces across the entirety of the insulating film.
（ホ）作 用
上述の如く絶縁［ｒ挾んで対向する受光面電極と半導体
１１１１部分的に直接当接させたことによって、電流は
斯る受光面１！極と半導体装の部分的な直接当接部に集
中して流れる。(e) Function As described above, by directly bringing the semiconductor 1111 into direct contact with the light-receiving surface electrodes that face each other with insulation [r] in between, the current flows through the light-receiving surface 1! The flow is concentrated in the partial direct contact area between the pole and the semiconductor device.
（へ）実施例
第１図は本発明光起電力装置の一実施例全示し、光入射
側から、Ｓ ｎ Ｏ２、ＩＴＯ等のＴｃｏからなる受光
面電極（１１と、シリコンナイトライド等の透光性絶縁
１１ｊ（２）と、半導体接合金偏えた非晶質シリコン全
主体とする半導体膜１３！と、Ａ１等の金属層を含む背
面電極１４＋ｉ支持体として作用する込光性且つ絶縁性
の例えばガラスからなる基板１５＋の一主面に順次配置
すると共に、上記絶縁１１４ｉ％ ＋２１ ｉ挾んで対
向する受光面電極１１１と半導体験１３１に部分的に直
接当接させるべく上記絶縁１（２）に微小なスルーホー
ル１６＋１６１・・・が離散的に分散して穿たれている
〇例えばその具体例全説明すると、基板ｔ５＋の一主面
１ｃｓｎｏ２の受光面電極（１１會約５０００Ａ熱ＣＶ
Ｄ法で形成し、その受光面電極１１）上にシリコンナイ
トライドの絶縁物１２１ 全豹３００ Ａ Ｓ ＩＨ４
とＮＨ３ｆ主原料ガスとする高周波プラズマＣＶＤ法に
より堆積する。このときの形成条件に、ＳｉＳｉＨ４２
０ＳＣＣＮＨｓ４０ＳＣＣＭ、基板温度２５０ ’ｃ、
反応ガス圧力０．５Ｔｏｒｒである０次にこの絶縁物１
２１にフォトリソグラフィ法により、直径１００〜２０
０Ａのスルーホー７Ｌ／（５１１６＋・・・ゲ、約３０
０ＯＡの間隔を隔てて開孔率、即ち有効受光面積に対す
るスルーホール１６！１６１・・・の総面積が占める割
合が約０１〜５９６となるように穿つＯそして、半導体
ＩＩ １３１として、ｐ型非晶質シリコンカーバイド層
（３ｐ）、１型非晶質シリコン層（３１）、及びｎ型微
結晶シリコン層（３ｎ）ｋ、それぞれ１５０Ｘ、５ｏｏ
ｏＸ、４００χ、ＳｉＨ４を主原料ガスとし、ｐ型層（
３ｐ）にはＢ２Ｈ６及びＣＨ４’ｉ、ｎ型層（３ｎ）に
ｔｉＰＨ３に添加シタ高周波プラズマＣＶＤ法により形
成する。従って、半導体膜１３Ｉのｐ型層（３ｐ）は絶
縁物１２１中に穿たれたスルーホール（６ｉ１６１・・
・全貫通して部分的に受光面電極ｔｌ＋と直接当接する
ことになる）最後に、背面電極１４＋としてＡｌｖ５ｏ
ｏｏＸ真空蒸着により形成する。Embodiment Fig. 1 shows an entire embodiment of the photovoltaic device of the present invention. A photoinsulating layer 11j (2), a semiconductor film 13 consisting entirely of amorphous silicon with semiconductor bonding gold, and a back electrode 14+i containing a metal layer such as A1, which is a light-transmitting and insulating layer that acts as a support. For example, they are sequentially arranged on one main surface of the substrate 15+ made of glass, and the insulation 1(2) is placed in direct contact with the light-receiving surface electrode 111 and the semiconductor layer 131, which face each other with the insulation 114i% +21i in between. Minute through-holes 16+161... are drilled in a discrete manner.For example, to explain the complete example, a light-receiving surface electrode on one main surface 1csno2 of the substrate t5+ (11 times approximately 5000A thermal CV
A silicon nitride insulator 121 is formed by the D method, and a silicon nitride insulator 121 is formed on the light receiving surface electrode 11).
The film is deposited by high-frequency plasma CVD using NH3f and NH3f as main raw material gases. At this time, SiSiH42
0SCCNHs40SCCM, substrate temperature 250'c,
This insulator 1 of zero order with a reaction gas pressure of 0.5 Torr
21 with a diameter of 100 to 20 mm by photolithography method.
0A through-hole 7L/(5116+...ge, approx. 30
The through holes 16!161... are drilled at intervals of 0OA so that the aperture ratio, that is, the ratio of the total area of the through holes 16 to the effective light receiving area is about 01 to 596. Crystalline silicon carbide layer (3p), type 1 amorphous silicon layer (31), and n-type microcrystalline silicon layer (3n)k, 150X, 5oo, respectively
oX, 400χ, SiH4 as main raw material gas, p-type layer (
3p) is formed by B2H6 and CH4'i, and the n-type layer (3n) is added to TiPH3 by high frequency plasma CVD. Therefore, the p-type layer (3p) of the semiconductor film 13I has through holes (6i161...) drilled in the insulator 121.
・Finally, Alv5o is used as the back electrode 14+.
Formed by ooX vacuum deposition.
第２図実線は斯る構成の光起電力装置に対しＡＭ−１，
１００ｍ Ｗ／ｃｍ 、の疑似太陽光を輻箔するソーラ
シュミレータによるＶ−Ｉ特性を示している。破線の比
較例１は本発明実施例構造からシリコンナイトライドの
絶縁物１２１ ’に除去した構造の光起電力装置のＶ−
Ｉ特性であり、また一点鎖線の比較例２は絶縁物（２）
に有するもののスルーホール＋６１ｉｈｌ・・・が穿た
れていない構造の光起電力装置のＶ−Ｉ特性である。尚
、本発明実施例乃至比較例の構造は上記以外同一構成で
ある。The solid line in Figure 2 indicates the AM-1,
It shows the VI characteristics obtained by a solar simulator that emits simulated sunlight of 100 mW/cm. Comparative Example 1 indicated by the broken line shows the V- of a photovoltaic device having a structure in which silicon nitride insulator 121' is removed from the structure of the embodiment of the present invention.
Comparative Example 2 indicated by the dashed line is an insulator (2).
This is the VI characteristic of a photovoltaic device having a structure in which the through holes +61ihl... are not drilled. The structures of the embodiments of the present invention to comparative examples are the same except for the above.
このように本発明構造の光起電力装置は、比較例１に比
して出力電圧が向上し光電変換効率が９゜５９６から１
１．５％に上昇したり一方、比較例２と比較すると、絶
縁物１２１に受光面電極巾と半導体膜１３Ｉとの間に配
挿したにも拘らず出力電流の低下金招かない。尚、比較
例２の光電変換効率は２．６％であった０
第３図は開孔率と光電変換効率の関係？示している□開
孔率は、有効受光面積に対するスル−ホール（〔；１（
６Ｉ・・・の総面積が占める割合であり、半導体装１；
引が受光面電極１１）と直接当接する割合と等しい。As described above, the photovoltaic device having the structure of the present invention has an improved output voltage compared to Comparative Example 1, and a photoelectric conversion efficiency of 9°596 to 1.
On the other hand, when compared with Comparative Example 2, the output current does not decrease even though the insulator 121 is disposed between the light-receiving surface electrode width and the semiconductor film 13I. In addition, the photoelectric conversion efficiency of Comparative Example 2 was 2.6%.0 Figure 3 shows the relationship between the aperture ratio and photoelectric conversion efficiency? The □ open area ratio shown is the through hole ([;1(
6I... is the percentage occupied by the total area of semiconductor device 1;
This is equal to the rate at which the contact surface directly contacts the light-receiving surface electrode 11).
開孔率０９６は絶縁祷１２１にスルーホール＋６１１６
１・・・かないことを意味し、比較例２に相当する。一
方、開孔率１００％は絶縁＠１２１が存在しないこと全
意味し、比較例１に相当する＾今、比較例の光電変換効
率は、比較例１が９．５％、比較例２が２．６％であっ
た０従って、比較例より高い光電変換効率を得るための
開化率は、０．１〜５％、好適には０１〜２％、より好
適には０．２５〜１９６であることが判る。Open area ratio 096 is insulation 121 through hole +6116
1: means not present, and corresponds to Comparative Example 2. On the other hand, a porosity of 100% means that there is no insulation @121, and corresponds to Comparative Example 1. Now, the photoelectric conversion efficiency of Comparative Example 1 is 9.5%, and Comparative Example 2 is 2. Therefore, the aperture ratio for obtaining a photoelectric conversion efficiency higher than that of the comparative example is 0.1 to 5%, preferably 01 to 2%, and more preferably 0.25 to 196. I understand that.
第４図は本発明光起電力装置の他の実施例を示している
＾即ち、斯る実施例の特徴は、受光面電極１１）として
絶縁物１２１及び半導体膜１３１が被着される側の面を
粗面化した所謂テクスチュア構造とし、当該テクスチュ
ア構造を利用して絶縁＠１２１に直接スルーホール１ｆ
）ｌ１６１・・・全形成したところにある。上記受光面
電極中のテクスチュア構造は、特開昭６１−２８８３１
４号公報のように受光面電極（しを被着後、当該受光面
電極中のエツチングレートの異方性を利用した工・ンチ
ングによるもの、或いは受光面電極１１）を構成するＴ
ＣＯとして粒径の大きい例えば特公昭６２−７７１６号
公報のように１０００ＡＪＩ上のものを用いて直接粗面
化する方法等がある。本実施例では熱ＣＶＤ法により平
均粒径約３０００Ａ頃上部での摸厚約７ｏｏｏＸ、底部
の噂厚約３００ＯＡ、即ち高低差約４００ＯＡのＳｎＯ
２からなる受光面電極＋１１ｉ形成した。引き続きテク
スチュア構造の受光面電極（し上に、ノンドープな非晶
質シリコンカーバイドからなる絶縁［１２１’！ｒ高周
波プラズマＣＶＤ法により形成した。FIG. 4 shows another embodiment of the photovoltaic device of the present invention. That is, the feature of this embodiment is that the insulating material 121 and the semiconductor film 131 are coated as the light-receiving surface electrode 11). The surface has a so-called textured structure with a roughened surface, and the through hole 1f is directly connected to the insulation @121 using the textured structure.
)l161...It is completely formed. The texture structure in the above light-receiving surface electrode is disclosed in Japanese Patent Application Laid-Open No. 61-28831.
As in Publication No. 4, the T forming the light-receiving surface electrode (by etching using the anisotropy of the etching rate in the light-receiving surface electrode after deposition, or the light-receiving surface electrode 11)
There is a method of directly roughening the surface using CO having a large particle size, for example, one having a diameter of 1000 AJI or more as disclosed in Japanese Patent Publication No. 62-7716. In this example, the thermal CVD method was used to produce SnO with an average grain size of about 3000A, a sample thickness of about 7oooX at the top, a rough thickness of about 300OA at the bottom, that is, a height difference of about 400OA.
A light-receiving surface electrode +11i consisting of 2 was formed. Subsequently, an insulating layer made of non-doped amorphous silicon carbide was formed on the textured light-receiving surface electrode by high-frequency plasma CVD.
このときの形成条件は、主原料ガスとし−てＳｉＨ４及
びＣ２Ｈ４會用い、ＳＳｉＨ４２０ＳＣＣ，ＣＣ２Ｈ４
１００５ＣＣ、基板温度４０で、反応圧力２’ｒｏｒｒ
である。この形成条件は、半導体として使用される非晶
質シリコンカーバイドに比して低温形成で、価電子制御
用のＢ２Ｈ６、ＰＨ３等のガス？使用しない。斯る形成
条件により得られる非晶質シリコンカーバイドの絶縁喚
ｔｚ＋ｕｅ中の５ｌ−Ｈ２結合量が７ＸＩＱ”濯−３と
多く、その結果ステ・ツブカバレッジが悪くなり、テク
スチュア構造の受光面電極１］＋の底部にはほとんど成
鞠されす、例えば預上部に約１０ＯＡの膿全成騎したと
き事実上１０％以下の開孔率を持った絶縁駿１２１全直
接堆積することができる。その後、第１図の実施例と同
様にｐ型非晶質シリコンカーバイド層（３ｐ）、１型非
晶質シリコン層（３１）、ｎ型Ｒ結晶シリコン！（３ｎ
）のｐ１ｎ重合金備えた半導体膜（３（と、Ａ１の背面
電極（４）を順次積層して光起電力装置全完成させる。The formation conditions at this time were to use SiH4 and C2H4 as the main raw material gas, SSiH420SCC, CC2H4
1005CC, substrate temperature 40, reaction pressure 2'rorr
It is. The formation conditions are lower temperature formation than amorphous silicon carbide used as a semiconductor, and gases such as B2H6 and PH3 for controlling valence electrons. do not use. The amount of 5l-H2 bonded in the insulation layer of amorphous silicon carbide obtained under such formation conditions is as high as 7XIQ'', resulting in poor step-to-tube coverage, and the textured light-receiving surface electrode 1] For example, when about 10 OA of pus is fully grown on the deposited part, the insulation layer 121 with a porosity of less than 10% can be directly deposited. As in the embodiment shown in Figure 1, a p-type amorphous silicon carbide layer (3p), a 1-type amorphous silicon layer (31), and an n-type R crystalline silicon! (3n) are used.
) and the back electrode (4) of A1 are sequentially laminated to complete the entire photovoltaic device.
そして、斯る光起電力装置に対しへＭ−１，１００ｍＷ
／需２の疑似太陽光線を照射したところ、１２％の光電
変換効率を得た。尚、絶縁１１（２）の存在しないテク
スチュア構造のみによる光起電力装置の光電変換効率に
１０５％であり、従って本発明の実施により１．５％の
光電変換効率の向上が図れたり
第５図は本発明光起電力装置の更に他の実施例を示して
いる０斯る実施例の特徴は絶縁物１２１のスルーホール
＋６１）６１・・・全受光面電極ＩＮが貫通し半導体装
（３１と直接当接したところにある０即ち、第１図及び
第４図の実施例は何れも受光面電極中全形成後、絶縁膜
１２；及び半導体１ｆ３１に順次積層していた関係で、
絶縁＠１２１のスルーホー／ｌ／＋６１１６１・・・中
には半導体装１３１が充填されていた。それに対し本実
施例は、背面電極１４Ｉ’！に基板側に形成するか或い
は当該背面電極１４！が支持体としての基板を兼ねるこ
とにより、形成順序が逆転したために、最後に形成され
る受光面電極Ｉｌ＋がヌル−ホーｚＬ／ｌ６１６１・・
・中に充填され、半導体装１３Ｉと部分的に直接当接す
ることになる０
（ト）発明の効果
本発明光起電力装置は以上の説明から明らかな如く、絶
縁１１１−Ｐんで対向する受光面電極と半導体［一部分
的に直接当接させたことに工って、電流は斯る受光面電
極と半導体装の部分的な直接当接部に集中して流れるの
で、直接当接部での局所的なポテンシャルエネルギの低
下を招くものの、集中したキャリアにより欠陥準位が埋
められるために、斯るポテンシャルエネルギの低下によ
る出力電圧の減少を最小限に抑圧し、直列抵抗成分の低
減が図れる結果、直列抵抗成分による電力損失を縮小す
ることができ、光電変換効率の上昇を達成し得る。And for such a photovoltaic device M-1,100mW
/ When irradiated with simulated sunlight of Demand 2, a photoelectric conversion efficiency of 12% was obtained. It should be noted that the photoelectric conversion efficiency of a photovoltaic device with only a textured structure without the presence of insulation 11(2) is 105%, and therefore, by implementing the present invention, the photoelectric conversion efficiency can be improved by 1.5%. 2 shows still another embodiment of the photovoltaic device of the present invention. The feature of this embodiment is that the entire light-receiving surface electrode IN passes through the through hole of the insulator 121 +61) and the semiconductor device (31) In other words, in the embodiments shown in FIGS. 1 and 4, the insulating film 12; and the semiconductor 1f31 were sequentially laminated after the light-receiving surface electrode was completely formed.
Through hole /l/+61161 of insulation@121... semiconductor device 131 was filled inside. In contrast, in this embodiment, the back electrode 14I'! or the back electrode 14! Since the formation order is reversed due to the substrate also serving as a support, the light-receiving surface electrode Il+ formed last is null-ho zL/l6161...
・The photovoltaic device of the present invention has a light-receiving surface that faces the semiconductor device 111-P with the insulation 111-P, as is clear from the above description. The electrode and the semiconductor [Due to the fact that the electrode and the semiconductor device are in partial direct contact, the current flows in a concentrated manner in the partial direct contact between the light-receiving surface electrode and the semiconductor device. However, since the defect levels are filled by concentrated carriers, the decrease in output voltage due to such a decrease in potential energy can be suppressed to a minimum, and the series resistance component can be reduced. Power loss due to series resistance components can be reduced, and photoelectric conversion efficiency can be increased.
第１図は本発明光起電力装置の一実施例を示す断面図、
第２図は出力電圧−電流特性図、第３図は開孔率と光電
変換効率との関係を示す曲線図、第４図は他の実施例を
示す断面図、第５図は更に他の実施例を示す断面図、第
６図は従来例を示す断面図である。
１１）・・・受光面電極、＋２１・・・絶縁−，１３１
・・・半導体襖、（４１・・・背面電極、（６Ｉ・・・
ス／Ｌ／−ホール。FIG. 1 is a sectional view showing an embodiment of the photovoltaic device of the present invention;
Fig. 2 is an output voltage-current characteristic diagram, Fig. 3 is a curve diagram showing the relationship between the aperture ratio and photoelectric conversion efficiency, Fig. 4 is a sectional view showing another example, and Fig. 5 is a further example. A sectional view showing the embodiment, and FIG. 6 is a sectional view showing a conventional example. 11)... Light receiving surface electrode, +21... Insulation -, 131
... Semiconductor sliding door, (41... Back electrode, (6I...
S/L/-Hall.
Claims (3)
備えた半導体膜及び背面電極を順次配置すると共に、上
記絶縁膜を挾んで対向する受光面電極と半導体膜を部分
的に直接当接させたことを特徴とする光起電力装置。(1) A light-receiving surface electrode, an insulating film, a semiconductor film with a semiconductor junction, and a back electrode are sequentially arranged from the light incident side, and the light-receiving surface electrode and semiconductor film facing each other with the insulating film in between are partially directly contacted. A photovoltaic device characterized by being brought into contact with each other.
を特徴とした特許請求の範囲第１項記載の光起電力装置
。(2) The photovoltaic device according to claim 1, wherein the interface on the insulating film side of the light-receiving surface electrode is uneven.
主原料ガスとした気相成長法により形成されることを特
徴とした特許請求の範囲第１項若しくは第２項記載の光
起電力装置。(3) The photovoltaic device according to claim 1 or 2, wherein the insulating film and the semiconductor film are formed by a vapor phase growth method using a silicon compound gas as a main raw material gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62118003A JP2680577B2 (en) | 1987-05-14 | 1987-05-14 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62118003A JP2680577B2 (en) | 1987-05-14 | 1987-05-14 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63283078A true JPS63283078A (en) | 1988-11-18 |
| JP2680577B2 JP2680577B2 (en) | 1997-11-19 |
Family
ID=14725647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62118003A Expired - Fee Related JP2680577B2 (en) | 1987-05-14 | 1987-05-14 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680577B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143569A (en) * | 1988-11-25 | 1990-06-01 | Agency Of Ind Science & Technol | Photoelectric conversion element |
| JP4562220B2 (en) * | 1999-06-22 | 2010-10-13 | シャープ株式会社 | Thin film solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6079757U (en) * | 1983-11-07 | 1985-06-03 | 京セラ株式会社 | solar cells |
-
1987
- 1987-05-14 JP JP62118003A patent/JP2680577B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6079757U (en) * | 1983-11-07 | 1985-06-03 | 京セラ株式会社 | solar cells |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143569A (en) * | 1988-11-25 | 1990-06-01 | Agency Of Ind Science & Technol | Photoelectric conversion element |
| JP4562220B2 (en) * | 1999-06-22 | 2010-10-13 | シャープ株式会社 | Thin film solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2680577B2 (en) | 1997-11-19 |
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