JPS63283073A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS63283073A JPS63283073A JP11688287A JP11688287A JPS63283073A JP S63283073 A JPS63283073 A JP S63283073A JP 11688287 A JP11688287 A JP 11688287A JP 11688287 A JP11688287 A JP 11688287A JP S63283073 A JPS63283073 A JP S63283073A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sensing element
- groove
- diaphragm
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、半導体圧力センサに関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to semiconductor pressure sensors.
（従来の技術）
半導体薄片から成るダイアフラム内に形成された所定の
抵抗領域をピエゾ抵抗素子として使用する圧力センサに
、温度補償を行なうためにセンサ自身の温度を測定する
感温素子がダイアフラム周辺の肉厚部に一体化された複
合センサがこれまでに提案されている。(Prior art) A pressure sensor uses a predetermined resistance area formed in a diaphragm made of a thin semiconductor piece as a piezoresistive element, and a temperature sensing element that measures the temperature of the sensor itself is installed around the diaphragm to perform temperature compensation. Composite sensors integrated into thick parts have been proposed so far.
上記ピエゾ抵抗に電流が消費する熱、感温素子を流れる
電流が消費する熱は、それぞれ半導体基板上に成る熱平
衡状態での等温分布を持つ。従来、熱源となるピエゾ抵
抗素子の配置は、それらでホイートストンブリッジを形
成させることを考慮してダイアフラムの周辺部に対称的
に４つ配置し、熱分布が均一になるようにしていた。The heat consumed by the current flowing through the piezoresistor and the heat consumed by the current flowing through the temperature sensing element each have an isothermal distribution in a thermal equilibrium state on the semiconductor substrate. Conventionally, four piezoresistive elements serving as a heat source have been arranged symmetrically around the diaphragm in consideration of forming a Wheatstone bridge, thereby ensuring uniform heat distribution.
しかしながら、感温素子を有する複合センサの場合は、
感温素子の発生する熱が、対称配置されたピエゾ抵抗に
よって形成された熱分布を乱し、肉厚部に位置している
感温素子を熱源とした非対称な熱分布を持つようになる
。ピエス抵抗および感温素子の発生した熱は、主として
半導体圧力センサを囲む圧力伝達媒体を介して散逸する
。したがって、感温素子のピエゾ抵抗素子に対する非対
称配置によって各ピエゾ抵抗素子への熱影響が異なって
しまう。このため、特に周囲温度の変化に対して各ピエ
ゾ抵抗の温度変化のばらつきが大きくなり、温度補償の
補償域を逸脱する可能性があった。また、上記のピエゾ
抵抗により構成したホイートストンブリッジに電圧を印
加した後のゼロ点の時間的変化が、長時間継続する現象
も生じた。However, in the case of a composite sensor with a temperature sensing element,
The heat generated by the temperature sensing element disturbs the heat distribution formed by the symmetrically arranged piezoresistors, resulting in an asymmetrical heat distribution with the temperature sensing element located in the thick part as the heat source. The heat generated by the Piece resistor and the temperature sensing element is dissipated primarily through the pressure transmission medium surrounding the semiconductor pressure sensor. Therefore, the thermal influence on each piezoresistive element differs due to the asymmetrical arrangement of the temperature sensing element with respect to the piezoresistive element. For this reason, the variation in temperature change of each piezoresistor becomes large, especially with respect to a change in ambient temperature, and there is a possibility that the piezoresistor deviates from the compensation range of temperature compensation. Furthermore, a phenomenon occurred in which the temporal change in the zero point after applying a voltage to the Wheatstone bridge constructed of the piezoresistors described above continued for a long time.
上記の事情に鑑み、感温素子や制御回路、信号処理回路
等がダイアフラム部の囲りの肉厚部に均等に分布するよ
うに配置を考慮したり、上記ダイアフラム部内のピエゾ
抵抗を一箇所に集め、熱的影響の均一性を保とうとした
集積化センサがあった。しかしながら、肉厚部への諸回
路の配置は、それぞれの回路素子によって発生する熱量
が異なったりして、完全な対称性を保持するのが困難と
なる。また、ピエゾ抵抗を一箇所に集めると、ピエゾ抵
抗の占める領域が、ダイアフラム部の広い領域の平均値
となり、最適位置に配置できなくなる結果、非線形な応
答となる欠点があった。In view of the above circumstances, consideration should be given to the placement of temperature sensing elements, control circuits, signal processing circuits, etc. so that they are evenly distributed in the thick part surrounding the diaphragm, and piezoresistors in the diaphragm are placed in one place. There have been integrated sensors that have attempted to maintain uniformity of thermal effects. However, when arranging various circuits in the thick portion, it is difficult to maintain complete symmetry because the amount of heat generated by each circuit element differs. Furthermore, if the piezoresistors are gathered in one place, the area occupied by the piezoresistors becomes an average value over a wide area of the diaphragm portion, making it impossible to arrange them at optimal positions, resulting in a nonlinear response.
さらに、起歪部であるダイアフラム部で発生する圧力印
加時の応力は、肉厚部に配置された補償用センサや信号
処理回路等の素子にまで影響を与え、信頼性の高い補償
ができなかった。Furthermore, the stress generated when pressure is applied to the diaphragm part, which is a strain-generating part, affects elements such as compensation sensors and signal processing circuits placed in the thick part, making it impossible to perform highly reliable compensation. Ta.
（発明が解決しようとする問題点）
上記のように、従来の素子配置構造の複合センサにおい
ては、起歪部のダイアフラムの板厚が薄くなると、感度
が高くなり、熱分布の不平衡や熱分布の安定までに長時
間を要することにより、ゼロ点温度特性が悪化し、ゼロ
点ドリフトやゼロ点温度誤差が半導体圧力センサの特性
に大きく影響するという問題があった。そこで本発明は
、前記のような諸問題を解消できて高感度で信頼性の高
い半導体圧力センサを提供することを目的とする。(Problems to be Solved by the Invention) As mentioned above, in a conventional composite sensor with an element arrangement structure, as the thickness of the diaphragm in the strain-generating part becomes thinner, the sensitivity increases, causing imbalance in the heat distribution and Since it takes a long time for the distribution to become stable, the zero point temperature characteristics deteriorate, and there is a problem in that zero point drift and zero point temperature error greatly affect the characteristics of the semiconductor pressure sensor. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a highly sensitive and reliable semiconductor pressure sensor that can solve the above-mentioned problems.
（問題点を解決するための手段）
本発明の半導体圧力センサは、半導体基板のダイアフラ
ム部の表面にピエゾ抵抗が設けられるとともに前記半導
体基板の周辺肉厚部に感温素子が設けられ、前記ピエゾ
抵抗を有するダイアフラム部と感温素子との間に低熱伝
導率部が介在された構造に構成される。(Means for Solving the Problems) The semiconductor pressure sensor of the present invention includes a piezoresistor provided on the surface of a diaphragm portion of a semiconductor substrate, and a temperature sensing element provided in a peripheral thick portion of the semiconductor substrate, The structure is such that a low thermal conductivity section is interposed between a diaphragm section having resistance and a temperature sensing element.
（作 用）
本発明の半導体圧力センサにおいては、ピエゾ抵抗を有
するダイアフラム部と感温素子との間に介在している低
熱伝導率部によって、前記ピエゾ抵抗と感温素子相互の
熱的干渉が抑制され、その結果ピエゾ抵抗に対する感温
素子の発熱の影響が低減され、圧力センサのゼロ点温度
誤差およびゼロ点ドリフトの問題が解消される。(Function) In the semiconductor pressure sensor of the present invention, the low thermal conductivity portion interposed between the diaphragm portion having a piezoresistor and the temperature sensing element prevents mutual thermal interference between the piezoresistor and the temperature sensing element. As a result, the effect of heat generation of the temperature sensitive element on the piezoresistor is reduced, and the problems of zero point temperature error and zero point drift of the pressure sensor are eliminated.
（実施例）
以下、図面に示した実施例に基いて本発明の詳細な説明
する。本発明一実施例の半導体圧力センサを第１図（ａ
）、（ｂ）に示す。第１図（ａ）は上面から見た透視平
面図で、第１図（ｂ）は断面図である。(Example) Hereinafter, the present invention will be described in detail based on the example shown in the drawings. A semiconductor pressure sensor according to an embodiment of the present invention is shown in FIG.
) and (b). FIG. 1(a) is a perspective plan view seen from above, and FIG. 1(b) is a sectional view.
ｎ型シリコン基板（１）には下面側の凹部により薄肉に
形成された起歪部としてのダイアフラム部（２）が形成
され、ダイアフラム部（２）の上面側に４個のＰ型ピエ
ゾ抵抗（３）、（４）、（５）、（６）が形成されてい
る。ダイアフラム部（２）周辺の肉厚部（８）の上面に
ｎｐｎトランジスタから成る感温素子（７）が形成され
、ダイアフラム部（２）と感温素子（７）の設けられて
いる肉厚部（８）との間にはシリコン基板（１）の下面
に溝（９）が設けられている。この溝（９）は、ダイア
フラム部（２）形成時と同時に選択エツチングによって
、例えば、ＫＯＨ液等により異方性エッチして、その溝
（９）のある部分の基板（１）の厚さはダイアフラム部
（２）の厚さとほぼ等しい厚さにする。A diaphragm part (2) as a thin strain-generating part is formed in the n-type silicon substrate (1) by a recessed part on the lower surface side, and four P-type piezoresistors ( 3), (4), (5), and (6) are formed. A temperature sensing element (7) made of an npn transistor is formed on the upper surface of a thick part (8) around the diaphragm part (2), and the diaphragm part (2) and the thick part where the temperature sensing element (7) is provided (8), a groove (9) is provided on the lower surface of the silicon substrate (1). This groove (9) is formed by selective etching, for example, by anisotropic etching using KOH solution or the like, at the same time as forming the diaphragm part (2), so that the thickness of the substrate (1) at the portion where the groove (9) is located is The thickness should be approximately equal to the thickness of the diaphragm part (2).
シリコン単結晶より成る基板（１）はパイレックスガラ
スから成る台（１０）にアノ−デックボンディング技術
により接合されている。A substrate (1) made of silicon single crystal is bonded to a base (10) made of Pyrex glass by anode bonding technique.
上記のように構成された本発明一実施例の半導体圧力セ
ンサにおいては、感温素子（７）の感じる温度は、同一
単結晶の基板（１）内である上、同じ環境下に置かれて
いることから、はぼピエゾ抵抗（３）〜（６）の周辺の
温度を感知できる。溝（９）は低熱伝導率部と−なるた
め、溝（９）を隔てた肉厚部（８）上に置かれた熱源と
なる感温素子（７）の熱の影響は、起歪部であるダイア
フラム部（２）の面上に設けられたピエゾ抵抗（３）〜
（６）に対しては小さいものとなる。また、溝（９）の
作用は、起歪部に発生する熱や圧力印加による歪の影響
を肉厚部（８）に形成した感温素子（７）へ伝達し難く
している。In the semiconductor pressure sensor of the embodiment of the present invention configured as described above, the temperature felt by the temperature sensing element (7) is within the same single crystal substrate (1) and is placed in the same environment. Therefore, the temperature around the piezoresistors (3) to (6) can be sensed. Since the groove (9) serves as a low thermal conductivity area, the effect of heat from the temperature-sensitive element (7), which serves as a heat source, placed on the thick wall part (8) across the groove (9) is due to the strain-generating area. The piezoresistor (3) provided on the surface of the diaphragm portion (2) is
(6) is small. Further, the effect of the groove (9) makes it difficult for the effects of heat generated in the strain-generating portion and strain caused by pressure application to be transmitted to the temperature-sensitive element (7) formed in the thick portion (8).
したがって、溝（９）による熱的干渉の低減作用により
、ピエゾ抵抗（３）〜（６）により構成したブリッジの
ゼロ点温度変化は、ヒステリシスが無く、外部温度の変
化に応じた特性となる。また、圧力印加時の起歪部であ
るダイアフラム部（２）に発生した歪は周辺の肉厚部（
８）に伝達するが、溝（９）により感温素子（７）まで
は伝達されない。そのため、温度補償用として使用する
感温素子（７）の信頼性が高まり、確度のある温度補償
が可能となる。Therefore, due to the effect of reducing thermal interference by the groove (9), the zero point temperature change of the bridge constituted by the piezoresistors (3) to (6) has no hysteresis and has a characteristic that corresponds to a change in external temperature. In addition, the strain generated in the diaphragm part (2), which is the strain-generating part when pressure is applied, is caused by the surrounding thick wall part (
8), but is not transmitted to the temperature sensing element (7) due to the groove (9). Therefore, the reliability of the temperature sensing element (7) used for temperature compensation increases, and accurate temperature compensation becomes possible.
なお、本発明は上述した実施例に限らず、次のように変
形して実施することができる。すなわち、溝（９）を形
成する代りに、溝（９）に相当する部分のシリコンを完
全に除去し、分離された両者をポリミド等で接続した構
造にすることにより、熱的分離をより確実なものとする
ことができる。また、第１図（ａ）、（ｂ）では溝（９
）をシリコン基板（１）の下面に形成したが、溝（９）
をシリコン基板（１）の上面に形成しても同等な効果を
得られる。Note that the present invention is not limited to the embodiments described above, and can be implemented with the following modifications. In other words, instead of forming the groove (9), the silicon in the part corresponding to the groove (9) is completely removed and the separated two parts are connected with polyimide or the like, thereby making thermal isolation more reliable. It can be made into something. In addition, in FIGS. 1(a) and (b), the groove (9
) was formed on the bottom surface of the silicon substrate (1), but the groove (9)
The same effect can be obtained by forming the above on the upper surface of the silicon substrate (1).
以上詳述したように本発明によれば、半導体基板のダイ
アフラム部の表面にピエゾ抵抗が設けられるとともに前
記半導体基板の周辺肉厚部に感温素子が設けられた半導
体圧力センサにおいて、前記ダイアプラム部と感温素子
との間に低熱伝導率部を介在させた構造にしたことによ
り、低熱伝導率部による熱的干渉の低減作用によって前
記ピエゾ抵抗と感温素子相互の熱的干渉が抑制され、そ
の結果、ピエゾ抵抗により構成したブリッジのゼロ点温
度変化は、ヒステリシスが無く、外部温度変化に応じた
特性となり、圧力センサのゼロ点温度誤差およびドリフ
トの問題が解消される。As detailed above, according to the present invention, in a semiconductor pressure sensor in which a piezoresistor is provided on the surface of a diaphragm portion of a semiconductor substrate and a temperature sensing element is provided in a peripheral thick portion of the semiconductor substrate, the diaphragm portion By having a structure in which a low thermal conductivity portion is interposed between the piezoresistor and the temperature sensing element, mutual thermal interference between the piezoresistor and the temperature sensing element is suppressed by the thermal interference reduction effect of the low thermal conductivity portion, As a result, the zero-point temperature change of the bridge made of piezoresistors has no hysteresis and has a characteristic that corresponds to external temperature changes, and the problems of zero-point temperature error and drift of the pressure sensor are solved.
第１図（ａ）、（ｂ）は本発明一実施例の半導体圧力セ
ンサを示し、第１図（ａ）は上面より見た透視子面図、
第１図（ｂ）は断面図である。
１・・・半導体基板 ２・・・ダイアフラム部
３．４，５，６・・・ピエゾ抵抗 ７・・・感温素子
８・・肉厚部 ９・・・低熱伝導率部（溝
）１０・・・台FIGS. 1(a) and 1(b) show a semiconductor pressure sensor according to an embodiment of the present invention, FIG. 1(a) is a transparent top view as seen from the top,
FIG. 1(b) is a sectional view. 1... Semiconductor substrate 2... Diaphragm portion 3.4, 5, 6... Piezoresistor 7... Temperature sensing element 8... Thick part 9... Low thermal conductivity part (groove) 10. ...stand
Claims (2)
ダイアフラム部に設けられたピエゾ抵抗と、前記ダイア
フラム部の周辺肉厚部に設けられた感温素子とを具備し
て成る半導体圧力センサにおいて、前記ピエゾ抵抗と感
温素子との間に低熱伝導率部を介在させて成ることを特
徴とする半導体圧力センサ。(1) A semiconductor pressure sensor comprising a diaphragm portion formed on a semiconductor substrate, a piezoresistor provided on the diaphragm portion, and a temperature sensing element provided on a peripheral thick portion of the diaphragm portion, A semiconductor pressure sensor characterized in that a low thermal conductivity section is interposed between the piezoresistor and the temperature sensing element.
成され、低熱伝導率部が前記基板に形成された溝である
ことを特徴とする特許請求の範囲第１項記載の半導体圧
力センサ。（３）低熱伝導率部が半導体基板よりも熱伝
導率の低い物質で形成されたことを特徴とする特許請求
の範囲第１項記載の半導体圧力センサ。(2) The semiconductor pressure sensor according to claim 1, wherein the piezoresistor and the temperature sensing element are formed on the same semiconductor substrate, and the low thermal conductivity portion is a groove formed in the substrate. (3) The semiconductor pressure sensor according to claim 1, wherein the low thermal conductivity portion is formed of a material having a lower thermal conductivity than the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11688287A JPS63283073A (en) | 1987-05-15 | 1987-05-15 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11688287A JPS63283073A (en) | 1987-05-15 | 1987-05-15 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63283073A true JPS63283073A (en) | 1988-11-18 |
Family
ID=14697974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11688287A Pending JPS63283073A (en) | 1987-05-15 | 1987-05-15 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63283073A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145810A (en) * | 1990-06-25 | 1992-09-08 | Oki Electric Industry Co., Ltd. | Fabrication process of semiconductor pressure sensor for sensing pressure applied |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146019A (en) * | 1979-05-01 | 1980-11-14 | Toshiba Corp | Pressure detector of semiconductor |
| JPS55163880A (en) * | 1979-06-07 | 1980-12-20 | Hitachi Ltd | Semiconductor strain gauge bridge circuit |
| JPS5839069A (en) * | 1981-08-31 | 1983-03-07 | Shimadzu Corp | Semiconductor diaphragm |
| JPS6030554B2 (en) * | 1978-11-15 | 1985-07-17 | 松下電器産業株式会社 | printing device |
-
1987
- 1987-05-15 JP JP11688287A patent/JPS63283073A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030554B2 (en) * | 1978-11-15 | 1985-07-17 | 松下電器産業株式会社 | printing device |
| JPS55146019A (en) * | 1979-05-01 | 1980-11-14 | Toshiba Corp | Pressure detector of semiconductor |
| JPS55163880A (en) * | 1979-06-07 | 1980-12-20 | Hitachi Ltd | Semiconductor strain gauge bridge circuit |
| JPS5839069A (en) * | 1981-08-31 | 1983-03-07 | Shimadzu Corp | Semiconductor diaphragm |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145810A (en) * | 1990-06-25 | 1992-09-08 | Oki Electric Industry Co., Ltd. | Fabrication process of semiconductor pressure sensor for sensing pressure applied |
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