JPS63274622A - Compound having hexagonal laminar structure expressed by lugazn7o10 and its production - Google Patents
Compound having hexagonal laminar structure expressed by lugazn7o10 and its productionInfo
- Publication number
- JPS63274622A JPS63274622A JP10952687A JP10952687A JPS63274622A JP S63274622 A JPS63274622 A JP S63274622A JP 10952687 A JP10952687 A JP 10952687A JP 10952687 A JP10952687 A JP 10952687A JP S63274622 A JPS63274622 A JP S63274622A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- heating
- decomposed
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011701 zinc Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 5
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
Landscapes
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物であるＬｕＧａＺｎｔＯ＋ｏで示され
る六方晶系の層状構造を有する化合物およびその製造法
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by LuGaZntO+o, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”Ｏｘ）、、Ｆｅ”０（ｎは整数を
表わす）で示される六方晶系の層状構造を有する化合物
は本出廓人によって合成され知られている。Prior Art Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"Ox), , Fe"0 (n represents an integer) have been synthesized by the present inventor and are known.
ＹｂＦｅｔＯｔ、ＹｂｔＦｅｓＯｖ、 ＹｂＦｅ０＋ｏ
及びＹｂｎＦｅ５Ｏ０の六方晶系としての格子定数、ｙ
ｂｏ、、、層、 ＦｅＯ＋、ｓ層、 Ｆｅ＊０□、２層
の単位格子内における層数を示すと表−１の通りである
。YbFetOt, YbtFesOv, YbFe0+o
and the lattice constant of YbnFe5O0 as a hexagonal system, y
Table 1 shows the number of layers in the unit cell of bo, , layer, FeO+, s layer, Fe*0□, and 2 layers.
これらの化合物は酸化鉄１モルに対して、ＹｂＦｅ０ｉ
がｎモルの割合で化合していると考えられる層状構造を
持つ化合物である。These compounds have YbFeOi for 1 mole of iron oxide.
It is a compound with a layered structure that is thought to be combined at a ratio of n moles.
発明の目的
本発明は（ＹｂＰｅＯｓ） ｆｉＦｅＯの化学式におい
て、ｎ−１／７に相当し、Ｙｂ’°の代わりにＬｕ”を
、Ｐｅ１の代わりにＧａ ２ ＋を、Ｆｅ２°の代わり
にＺｎ”を置きかえて得られた新規化合物を提供するに
ある。Purpose of the Invention The present invention relates to (YbPeOs) which corresponds to n-1/7 in the chemical formula of fiFeO, in which Lu'' is substituted for Yb'°, Ga 2 + is substituted for Pe1, and Zn'' is substituted for Fe2°. The object of the present invention is to provide a novel compound obtained by replacing the present invention.
発明の構成
本発明のＬｕＧａＺｎｔＯ＋。で示される化合物は、イ
オン結晶モデルではＬｕ”（ＧａミコＺｎ”°）Ｚｎ６
”Ｏ＋ｏ”−として記載され、その構造はＬｕＯ＋、ｓ
層 （（、ａ１＊。Constitution of the Invention LuGaZntO+ of the present invention. In the ionic crystal model, the compound represented by
Described as “O+o”-, its structure is LuO+, s
layer ((, a1*.
Ｚｎ”） Ｏｔ、ｓ層およびＺｎＱ Ｊｉｉの積層によ
って形成されており、著しい構造異方性を持つことがそ
の特徴の一つであるｍ Ｚｎ”イオン数の１／７はＧａ
２ ＋と共に（Ｇａ”、 Ｚｎ”°）（ｈ、 ｓ層を
作り、残りの６／７はＺｎＯ層を作っている。六方晶系
としての格子定数は次の通りである。Zn") is formed by stacking Ot, s layers, and ZnQ Jii, and one of its characteristics is that it has remarkable structural anisotropy. 1/7 of the number of Zn" ions is Ga.
Together with 2+, the (Ga'', Zn''°) (h, s layer is formed, and the remaining 6/7 forms the ZnO layer. The lattice constant as a hexagonal system is as follows.
ａ ＝３．３０７ ±０．００１ （人）Ｃ−７２，０
１±０．０１ （人）
゛ この化合物の面指数（ｈｋＮ）、面間隔（ｄ（
人））。a = 3.307 ±0.001 (person) C-72,0
1±0.01 (person) ゛ Planar index (hkN), plane spacing (d(
Man)).
（ｄ、は実測値１ ｄ（は計算値を示す）およびＸ線に
対する相対反射強度（１％）を示すと表−２の通りであ
る。Table 2 shows the relative reflection intensity (1%) for X-rays and d (d indicates the calculated value).
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属ルテチウムあるいは酸化ルテチウムもしくは加熱に
より酸化ルテチウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、Ｌ
ｕ、 ＧａおよびＺｎの割合が原子比で１対１対７の割
合で混合し、該混合物を６００℃以上の温度で、大気中
、！２化性雰囲気中あるいはＬｕおよびＧａが各々３価
イオン状態、Ｚｎが２価イオン状態より還元されない還
元雰囲気中で加熱することによって製造し得られる。Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. ,L
U, Ga, and Zn are mixed in an atomic ratio of 1:1:7, and the mixture is exposed to air at a temperature of 600°C or higher. It can be produced by heating in a divalent atmosphere or in a reducing atmosphere in which Lu and Ga are not reduced to a trivalent ion state, and Zn is not reduced to a divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０７７１１以下であること
が好ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, and in particular, a particle size of 107,711 or less is preferable.
また光機能材料、半導体材料として用いる場合には不純
物の混入をきらうので、純度の高いことが好ましい、出
発物質が加熱により金属酸化物を得る化合物としては、
それぞれの金属の水酸化物。In addition, when used as an optical functional material or semiconductor material, contamination with impurities is avoided, so it is preferable to have high purity.As a compound whose starting material yields a metal oxide by heating,
hydroxide of each metal.
炭酸塩、硝酸塩等が挙げられる。Examples include carbonates and nitrates.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｌｕ、 Ｇａ、およびＺｎの割合が
原子比でｌ対１対７の割合であることが必要である。こ
れをはずすと目的とする化合物の単−相を得ることがで
きない。The mixing ratio of the raw materials must be such that the atomic ratio of Lu, Ga, and Zn is 1:1:7. If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＬｕおよ
びＧａが各々３価イオン状態、Ｚｎが２価イオン状態か
ら還元されない還元雰囲気中で６００℃以上のもとで加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない、加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Lu and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion state. Heating time is several hours or more. There is no restriction on the rate of temperature increase during heating; it is sufficient to rapidly cool the material after heating or to rapidly draw it out into the atmosphere.
得られたＬｕＧａＺｎ、０．。化合物の粉末は無色であ
り、粉末Ｘ線回折法によって結晶構造を有することが分
かった。その結晶構造は層状構造であり、ＬｕＯ＋、ｓ
ＪＩ、 （Ｇａ、 Ｚｎ）Ｏｚ、ｓ Ｐ！およびＺｎＯ
層の積み重ねによって形成されていることが分かった。The obtained LuGaZn, 0. . The compound powder was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, and LuO+, s
JI, (Ga, Zn)Oz, s P! and ZnO
It turns out that it is formed by stacking layers.
実施例
純度９９．９９％以上の酸化ルテチウム（Ｌｕ５ｔｓ）
粉末、純度９９．９９％以上の酸化ガリウム（ＧａｔＯ
ｚ） ＦＡ末および試薬特級の酸化亜鉛（ＺｎＯ）粉末
をモル比で１対１対１４の割合に秤呈し、めのう乳鉢内
でエタノールを加えて、約３０分間混合し、平均粒径数
μ−の微粉末混合物を得た。該混合物を白金管内に封入
し、１４５０℃に設定された管状シリコニット炉内に入
れ、３日間加熱し、その後、試料を炉外にとりだし室温
まで急速に冷却した。得られた試料はＬｕＧａＺｎｙＯ
□単−相であった。粉末Ｘ線回折法によって面指数（ｈ
ｋ ｌ）。面間隔（ｄｏ）および相対反射強度（１％
）を測定した。その結果は表−２の通りであった。Example Lutetium oxide (Lu5ts) with a purity of 99.99% or more
Powder, gallium oxide (GatO) with a purity of 99.99% or more
z) Weigh out FA powder and reagent-grade zinc oxide (ZnO) powder at a molar ratio of 1:1:14, add ethanol in an agate mortar, and mix for about 30 minutes to reduce the average particle size to several μ- A fine powder mixture was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 3 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was LuGaZnyO
□It was single-phase. The surface index (h
k l). Interplanar spacing (do) and relative reflection intensity (1%
) was measured. The results were as shown in Table-2.
六方晶系としての格子定数は
ａ ＝３．３０７ ±０．００１ （人）Ｃ＝７２
．０１ ±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a = 3.307 ±0.001 (person) C = 72
．． 01 ±0.01 (person).
上記の格子定数および表−２の面指数（ｈ ｋ Ｚ）よ
り算出した面間隔（ｄｃ（人））は、実測の面間隔（ｄ
。The plane spacing (dc (person)) calculated from the above lattice constant and the plane index (h k Z) in Table 2 is the actually measured plane spacing (d
.
（人））と穫めてよく一致した。There was a good agreement with (person).
Claims (2)
の層状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by LuGaZn_7O_1_0.
加熱により酸化ルテチウムに分解される化合物と、金属
ガリウムあるいは酸化ガリウムもしくは加熱により酸化
ガリウムに分解される化合物と、金属亜鉛あるいは酸化
亜鉛もしくは加熱により酸化亜鉛に分解される化合物と
を、Ｌｕ、ＧａおよびＺｎの割合が原子比で１対１対７
の割合で混合し、該混合物を６００℃以上の温度で大気
中、酸化性雰囲気中あるいはＬｕおよびＧａが各々３価
イオン状態、Ｚｎが２価イオン状態より還元されない還
元雰囲気中で加熱することを特徴とするＬｕＧａＺｎ＿
７Ｏ＿１＿０で示される六方晶系の層状構造を有する化
合物の製造法。(2) Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; and Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. and the compound with an atomic ratio of Lu, Ga, and Zn of 1:1:7.
and heating the mixture at a temperature of 600° C. or higher in air, an oxidizing atmosphere, or a reducing atmosphere in which Lu and Ga are each in a trivalent ion state and Zn is not reduced in a divalent ion state. Features of LuGaZn_
A method for producing a compound having a hexagonal layered structure represented by 7O_1_0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10952687A JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10952687A JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63274622A true JPS63274622A (en) | 1988-11-11 |
| JPH0314779B2 JPH0314779B2 (en) | 1991-02-27 |
Family
ID=14512494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10952687A Granted JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63274622A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161049A (en) * | 1987-11-10 | 1989-06-23 | Bayer Ag | Blend of polycarbonate and siloxane-containing graft polymer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
-
1987
- 1987-05-01 JP JP10952687A patent/JPS63274622A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161049A (en) * | 1987-11-10 | 1989-06-23 | Bayer Ag | Blend of polycarbonate and siloxane-containing graft polymer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314779B2 (en) | 1991-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |