JPS63266743A - Device using charged particle beam - Google Patents
Device using charged particle beamInfo
- Publication number
- JPS63266743A JPS63266743A JP62099748A JP9974887A JPS63266743A JP S63266743 A JPS63266743 A JP S63266743A JP 62099748 A JP62099748 A JP 62099748A JP 9974887 A JP9974887 A JP 9974887A JP S63266743 A JPS63266743 A JP S63266743A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- charged particle
- particle beam
- magnetic field
- superconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 16
- 230000005291 magnetic effect Effects 0.000 abstract description 26
- 239000000463 material Substances 0.000 abstract description 16
- 239000002887 superconductor Substances 0.000 abstract description 13
- 230000004907 flux Effects 0.000 abstract description 9
- 239000011810 insulating material Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 230000005292 diamagnetic effect Effects 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は荷電粒子ビームを用いた装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an apparatus using a charged particle beam.
従来の荷電粒子ビームを用いた装置1例えばCRTに用
いられる磁気シールド法は、例えば日経エレクトロニク
ス1987年1月12日号(no。The magnetic shielding method used in a conventional device using a charged particle beam 1, such as a CRT, is described, for example, in Nikkei Electronics, January 12, 1987 issue (no.
412)第173頁から第184頁に記載されているよ
うに、パーマロイなどの透磁率の高い材料を用いるのが
通常であった。412) As described on pages 173 to 184, it has been common to use materials with high magnetic permeability such as permalloy.
上記従来技術は、パーマロイ内に磁束を集めることによ
って、パーマロイで囲んだ内部の磁束を少なくしている
。しかし、パーマロイ中に集めうる磁束の数はすぐに飽
和するので、磁束の漏洩が必ず存在する。よって、完全
に磁気シールドは得られず、荷電粒ビームに影響を及ぼ
すという問題があった。The above-mentioned conventional technology reduces the magnetic flux inside the permalloy by concentrating the magnetic flux within the permalloy. However, since the number of magnetic fluxes that can be collected in permalloy quickly saturates, there is always some flux leakage. Therefore, there is a problem in that a complete magnetic shield cannot be obtained, which affects the charged particle beam.
本発明の目的は、この漏洩磁束を減少させ、荷電粒子ビ
ームに対する外部磁場の影響を防止することにある。An object of the present invention is to reduce this leakage magnetic flux and prevent the influence of external magnetic fields on the charged particle beam.
上記目的は、荷電粒子ビームの存在する空間の周囲を超
伝導体で覆うことにより達成できる。The above object can be achieved by covering the space in which the charged particle beam exists with a superconductor.
荷電粒子ビームは磁場を受けるとフレミングの左手の法
則に従って曲がり、本来とは違う軌跡をたどってしまう
。When a charged particle beam is exposed to a magnetic field, it bends according to Fleming's left-hand rule, causing it to follow a trajectory different from its original trajectory.
一方、超伝導体は臨界温度以下では完全反磁性を示すた
め、磁束は超伝導体中と通過することができない、この
ため、超伝導体で荷電粒子ビームの存在する空間を覆っ
てしまうと、磁束のその空間への漏洩は完全に防止でき
、荷電粒子ビームは本来の軌跡を描くことになる。On the other hand, since superconductors exhibit complete diamagnetism below a critical temperature, magnetic flux cannot pass through the superconductor. Therefore, if the superconductor covers the space where the charged particle beam exists, Leakage of magnetic flux into that space can be completely prevented, and the charged particle beam will follow its original trajectory.
ところが、Nb38nのような金属系超伝導体を用いた
場合には、超伝導体を液体ヘリウム容器などの外部に出
す構造とすることができず、上記のような構造は実現で
きない、しかし、超伝導体にイツトリウム、バリウム、
ランタム、ストロンチウ11、酸化銅などを主金属系超
伝導体を用いれば、簡便な冷却装置で超伝導状態にする
ことができ、上記構造を実現できる。However, when a metallic superconductor such as Nb38n is used, it is not possible to create a structure in which the superconductor is exposed to the outside of a liquid helium container, etc., and the above structure cannot be realized. Yttrium, barium, as a conductor
If a main metal-based superconductor such as lantum, strontium-11, or copper oxide is used, it can be brought into a superconducting state with a simple cooling device, and the above structure can be realized.
以下実施例により本発明を説明する。 The present invention will be explained below with reference to Examples.
(実施例1)
第1図及び第2図は各々本発明による超伝導材磁気シー
ルド用いたCRTの断面図及び外観図である。(Example 1) FIGS. 1 and 2 are a cross-sectional view and an external view, respectively, of a CRT using a superconducting material magnetic shield according to the present invention.
電子銃10から出た電子ビーム7は、偏向ヨーク6の生
じる磁場によってその方向を制御され。The direction of the electron beam 7 emitted from the electron gun 10 is controlled by the magnetic field generated by the deflection yoke 6.
ブラウン管5の蛍光管に像を結ぶ、そのブラウン管5の
周囲を超伝導材磁気シールドカバー8で覆い、外部磁場
を遮蔽する。ただし、ブラウン管5の正面は外から見え
るように開放しておく、磁気シールドカバー8は、超伝
導材1及び冷却器3を断熱材2で覆った構造となってい
る。そして、外部のコンプレッサー4で冷却器3を駆動
し超伝導材lを臨界温度以下に冷却する。また断熱材2
で保温する。The periphery of the cathode ray tube 5, which focuses an image on the fluorescent tube of the cathode ray tube 5, is covered with a superconducting material magnetic shield cover 8 to shield external magnetic fields. However, the front surface of the cathode ray tube 5 is left open so that it can be seen from the outside, and the magnetic shield cover 8 has a structure in which the superconducting material 1 and the cooler 3 are covered with a heat insulating material 2. Then, the cooler 3 is driven by an external compressor 4 to cool the superconducting material 1 to below the critical temperature. Also, insulation material 2
Keep warm.
上記構造では完全な磁気シールドはできないが。The above structure cannot provide complete magnetic shielding.
超伝導材1の完全反磁性のため、シールド効果は大きく
、電子ビーム7の描く画像の解像度を高くすることがで
きる。Since the superconducting material 1 is completely diamagnetic, the shielding effect is large, and the resolution of the image drawn by the electron beam 7 can be increased.
(実施例2)
第3図は本発明の実施例2の電子ビー11描画装置の断
面図である。(Embodiment 2) FIG. 3 is a sectional view of an electronic beam 11 drawing apparatus according to Embodiment 2 of the present invention.
電子銃10.絞り11.偏向器12.対物レンズ13.
補正レンズ14から成る描画装置の本体を、実施例1と
同様に超伝導材1で取り囲む。そして超伝導1はコンプ
レッサー4と冷却器3によって冷却し、断熱材2で保温
する。Electron gun 10. Aperture 11. Deflector 12. Objective lens 13.
The main body of the drawing device consisting of the correction lens 14 is surrounded by the superconducting material 1 as in the first embodiment. The superconductor 1 is cooled by a compressor 4 and a cooler 3, and kept warm by a heat insulating material 2.
上記構造では、外部磁場は超伝導材1によってシールド
され、電子ビームによる微細なパタンの描画が可能とな
る。In the above structure, an external magnetic field is shielded by the superconducting material 1, making it possible to draw fine patterns using an electron beam.
(実施例3)
第4図は本発明の実施例3の低エネルギー電子エネルギ
ー損失分光器の断面図である。(Embodiment 3) FIG. 4 is a sectional view of a low-energy electron energy loss spectrometer according to Embodiment 3 of the present invention.
試材15に電子銃10で電子ビー11を当て、その時に
出る二次電子1Gを高電圧スキャナ18により分光し、
検出器17により検出する。この分光器本体を、超伝導
材1で取り囲む。そして超伝導材1をコンプレッサー4
と冷却器3によって冷却し、断熱材2で臨界温度以下に
保つ。An electron beam 11 is applied to the specimen 15 using an electron gun 10, and 1G of secondary electrons emitted at that time are spectrally analyzed using a high voltage scanner 18.
It is detected by the detector 17. This spectrometer body is surrounded by superconducting material 1. Then, the superconducting material 1 is transferred to the compressor 4.
It is cooled by a cooler 3 and kept below the critical temperature by a heat insulating material 2.
上記構造では、外部磁場は超伝導材料1の完全反磁性に
よってシールドでき、二次電子16を分光する分解能を
高くすることができる。In the above structure, an external magnetic field can be shielded by the complete diamagnetic property of the superconducting material 1, and the resolution for spectrally dispersing the secondary electrons 16 can be increased.
本発明によれば、外部磁場の漏洩による荷電粒子ビーム
の軌道のずれを防止することができ、荷電粒子ビームの
制御性を高くすることができる。According to the present invention, it is possible to prevent the trajectory of a charged particle beam from shifting due to leakage of an external magnetic field, and it is possible to improve the controllability of the charged particle beam.
なお、本発明は上記実施例のみならずTVカメラ、イオ
ン注入機、電子顕微鏡等、高度な磁気シールドを必要と
するすべて荷電粒子応用機器に適用可能である。It should be noted that the present invention is applicable not only to the above-mentioned embodiments but also to all charged particle application devices that require a high degree of magnetic shielding, such as TV cameras, ion implanters, and electron microscopes.
第1図は本発明の実施例1のCRTの断面図。
第2図は本発明の実施例1のCRTの外観図、第3図は
本発明の実施例2の電子ビーム描画装置の断面図、第4
図は本発明の実施例3の低エネルギー電子エネルギー損
失分光器の断面図である。
■・・・超伝導材、2・・・断熱材、3・・・冷却器、
4・・・コンプレッサー、5・・・ブラウン管、6・・
・偏向ヨーク。
7・・・電子ビーム、8・・・超伝導材磁気シールドカ
バー、10・・・電子銃、11・・・絞り、12・・・
偏向器。
13・・・対物レンズ、14・・・補正レンズ、15・
・・試料、16・・・二次電子、17・・・検出器、1
8・・・高電圧スキャナ。FIG. 1 is a sectional view of a CRT according to a first embodiment of the present invention. 2 is an external view of a CRT according to a first embodiment of the present invention, FIG. 3 is a sectional view of an electron beam lithography apparatus according to a second embodiment of the present invention, and FIG.
The figure is a sectional view of a low-energy electron energy loss spectrometer according to Example 3 of the present invention. ■...Superconducting material, 2...Insulating material, 3...Cooler,
4... Compressor, 5... Braun tube, 6...
・Deflection yoke. 7...Electron beam, 8...Superconducting material magnetic shield cover, 10...Electron gun, 11...Aperture, 12...
Deflector. 13... Objective lens, 14... Correction lens, 15.
...Sample, 16...Secondary electron, 17...Detector, 1
8...High voltage scanner.
Claims (1)
とする荷電粒子ビームを用いた装置。1. A device using a charged particle beam, characterized in that the periphery of the charged particle beam is covered with superconductivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62099748A JPS63266743A (en) | 1987-04-24 | 1987-04-24 | Device using charged particle beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62099748A JPS63266743A (en) | 1987-04-24 | 1987-04-24 | Device using charged particle beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63266743A true JPS63266743A (en) | 1988-11-02 |
Family
ID=14255617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62099748A Pending JPS63266743A (en) | 1987-04-24 | 1987-04-24 | Device using charged particle beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63266743A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4960760A (en) * | 1989-08-10 | 1990-10-02 | Howard J. Greenwald | Contactless mass transfer system |
JPH0644198U (en) * | 1992-11-16 | 1994-06-10 | 新日本製鐵株式会社 | Magnetic shield cover for display device |
-
1987
- 1987-04-24 JP JP62099748A patent/JPS63266743A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4960760A (en) * | 1989-08-10 | 1990-10-02 | Howard J. Greenwald | Contactless mass transfer system |
JPH0644198U (en) * | 1992-11-16 | 1994-06-10 | 新日本製鐵株式会社 | Magnetic shield cover for display device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6410923B1 (en) | Magnetic lens apparatus for use in high-resolution scanning electron microscopes and lithographic processes | |
Scheinfein et al. | Scanning electron microscopy with polarization analysis (SEMPA) | |
Batson | High‐energy resolution electron spectrometer for 1‐nm spatial analysis | |
EP1305816B1 (en) | Collection of secondary electrons through the objective lens of a scanning electron microscope | |
Nixon | The general principles of scanning electron microscopy | |
US4214162A (en) | Corpuscular beam microscope for ring segment focusing | |
WO1996041362A1 (en) | Magnetic lens apparatus for use in high-resolution scanning electron microscopes and lithographic processes | |
Dietrich | Superconducting electron-optic devices | |
US5111494A (en) | Magnet for use in a drift tube of an x-ray tube | |
JPS63266743A (en) | Device using charged particle beam | |
Luisa | Advances in electronics and electron physics | |
US4209701A (en) | Magnetic lens arrangement for corpuscular radiation equipment working under a vacuum | |
US8653472B2 (en) | Electromagnetic field application system | |
US4214166A (en) | Magnetic lens system for corpuscular radiation equipment | |
EP3496129B1 (en) | Transmission charged particle microscope with improved eels/eftem module | |
Dietrich et al. | Superconducting lenses in electron microscopy | |
Dietrich et al. | Proposed Superconducting 3-MV Microscope | |
EP0333240A1 (en) | Charged particle beam apparatus | |
Livingston | Properties and Limitations of Image Intensifies Used in Astronomy | |
Kuehne et al. | An Electrostatically Focused Vidicon | |
US4527846A (en) | Zoom focus and deflection assembly for electron discharge devices of the camera tube type | |
Kushnirenko et al. | Superconducting final focusing quad for linear collider | |
JPH0193032A (en) | Superconductive cathode-ray tube | |
Watanabe et al. | 1 million volt high voltage electron microscope | |
Müllerová et al. | Magnetic shielding of stray magnetic fields in the scanning electron microscope |