JPS63264379A - Linear light source device for printer - Google Patents
Linear light source device for printerInfo
- Publication number
- JPS63264379A JPS63264379A JP62098957A JP9895787A JPS63264379A JP S63264379 A JPS63264379 A JP S63264379A JP 62098957 A JP62098957 A JP 62098957A JP 9895787 A JP9895787 A JP 9895787A JP S63264379 A JPS63264379 A JP S63264379A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electron beam
- phosphor
- light source
- source device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 71
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims description 10
- 230000001133 acceleration Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 26
- 230000003287 optical effect Effects 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011701 zinc Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 108091008695 photoreceptors Proteins 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/4476—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using cathode ray or electron beam tubes
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光プリンタ用線光源装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a line light source device for an optical printer.
従来の技術
第７図、第８図に発光ダイオードアレイを用いた光プリ
ンタ用線光源の一例を示す。このプリンタは発光ダイオ
ード点光源４０（以後ＬＥＤともよぶ）を−次元アレイ
状に多数個並べた構造になっている。2. Description of the Related Art FIGS. 7 and 8 show an example of a line light source for an optical printer using a light emitting diode array. This printer has a structure in which a large number of light emitting diode point light sources 40 (hereinafter also referred to as LEDs) are arranged in a -dimensional array.
各々の点光源は、Ｇ ａ Ａ ｓ ＰもしくはＧ ａ
Ａ Ｉ Ａ ｓ等の半導体チップ上にモノリシックに形
成されたＬＥＤよ構成る。Each point light source is G a A s P or G a
It consists of an LED monolithically formed on a semiconductor chip such as AIAs.
現在の半導体技術では、Ａ４もしくはＡ３原稿長にも及
ぶＬＥＤアレイをモノリシックに形成できる大きさの半
導体基板を形成することは困難であるため、第８図に示
すような長さ５〜２０ｍ’ｊｆ程度のアレイチップ４１
を所定の長さになる様につながあわせて構成されている
。本従来例では１チツプあたシロ４個のＬＥＤを配列し
たものを６４個つなぎあわせて計４０９６絵素で、Ｂ４
サイズに対応している。With current semiconductor technology, it is difficult to form a semiconductor substrate large enough to monolithically form an LED array as long as an A4 or A3 document. Array chip 41
It is constructed by connecting them to a predetermined length. In this conventional example, 64 LEDs are arranged with 4 LEDs per chip, making a total of 4096 pixels, and B4
It corresponds to the size.
発光波長は６７０ｎｍ、１ｌＬＥＤの発光部面積は４０
８ｍＸ５０μｍであり、６２．５μｍピンチでならんで
いる。１ドツト当９の光量は４μＷ／ドツト（２ｍＷ／
−に相当）である。The emission wavelength is 670 nm, and the light emitting area of 1l LED is 40 nm.
It is 8 m x 50 μm, and is lined up with a 62.5 μm pinch. The light intensity of 9 per dot is 4μW/dot (2mW/
-).
これらの発光ダイオード点光源４ｏは並設された専用ド
ライバＬＳＩ４２によシ駆動点灯される。These light emitting diode point light sources 4o are driven and lit by a dedicated driver LSI 42 arranged in parallel.
ＬＥＤよシ発せられた光はセルフォックレンズアレイ４
３を介して、感光体ドラム上に結像する。The light emitted from the LED comes from SELFOC lens array 4.
3, the image is formed on the photoreceptor drum.
発光ダイオードアレイを用いた光プリンタは、すでに商
品化されている。Optical printers using light emitting diode arrays have already been commercialized.
しかし、現在実用化されている汎用感光体は、その感度
が可視短波長域になるにつれ高くなるものが多いが、上
記の様なＬＥＤによシ構成されたプリンタの発光波長は
、短くとも６５０ｎｍ程度までである。また、各ＬＥＤ
毎の輝度バラツキが１０〜１６％程度あり、これを５％
以下に均一に保つことは、かなり難しかった。However, the sensitivity of general-purpose photoreceptors currently in practical use increases as the visible wavelength range increases, but the emission wavelength of printers configured with LEDs as described above is at least 650 nm. To a certain extent. In addition, each LED
There is a luminance variation of about 10 to 16%, and this can be reduced to 5%.
It was quite difficult to keep it uniform below.
そこで上記問題点を解消し、高精度で、感光体との波長
マツチングがとれて、発光輝度のバラツキが小さく、安
価に製造できる光プリンタ用線光源として最近、螢光電
子管式の一次元アレイ光源が注目されている。Therefore, to solve the above problems, a fluorescent electron tube type one-dimensional array light source has recently been developed as a line light source for optical printers that has high precision, wavelength matching with the photoreceptor, small variation in luminance, and can be manufactured at low cost. is attracting attention.
具体的には、数１０ｖ〜１ｏＯ■程度の低速電子線によ
シ高い効率で励起でき、しかも発光波長は５００ｎｍ付
近である酸化亜鉛の粉末螢光体層に電子線を照射し、発
光させる。１）従来の螢光表示管同様にシャワー状に電
子ビームを照射し、発光させ、基板ガラスとは対向方向
に出射する光を利用する方法（特開昭５８−２２３２４
３号公報）１１）線状熱陰極から放射された電子ビーム
を収束電極を用いて帯状に収束して、パワー密度を上げ
て螢光体層に照射し、基板ガラスを透過して出射する光
を利用する方法（特願昭６０−１２７３号）等がある。Specifically, a powder phosphor layer of zinc oxide, which can be excited with high efficiency by a slow electron beam of several tens of volts to 100 volts and has an emission wavelength of around 500 nm, is irradiated with an electron beam to cause it to emit light. 1) Similar to conventional fluorescent display tubes, a shower-like electron beam is irradiated to emit light, and the light is emitted in a direction opposite to the substrate glass.
Publication No. 3) 11) The electron beam emitted from the linear hot cathode is focused into a band using a focusing electrode, the power density is increased, the phosphor layer is irradiated, and the light is transmitted through the substrate glass and emitted. There is a method using (Japanese Patent Application No. 60-1273).
第９図、第１０図に、特願昭６０−１２７３号に示され
た、１１）の方式の一実施例を示す。線状熱陰極６３．
電子゛ビーム取シ出し電極６７、収束電極６２．加速電
極６９．電子ビーム制御電極５６上に形成された螢光体
粉末層５６等が真空外囲器６１の中に封入されており、
線状熱陰極６３から放射された電子ビームを収束電極６
２を用いて帯状に収束し、スリン）６０を通して螢光体
粉末層５６に照射２発光させる。アレイ状に並んだ発光
点は第１０図に示す様に、その下に設けられた電子ビー
ム制御電極６６に数１０ｖの電位を印加するか否かで、
電子ビームを制御し、光をスイッチングする。電子ビー
ム制御電極５６は透明導電膜でできておシ、基板ガラス
６４を透過した光は、その下部に設けたセルフォックレ
ンズを介して、感光ドラム上に集光、結像される。FIGS. 9 and 10 show an embodiment of the method 11) shown in Japanese Patent Application No. 1273/1983. Linear hot cathode 63.
Electron beam extraction electrode 67, focusing electrode 62. Accelerating electrode 69. A phosphor powder layer 56 and the like formed on the electron beam control electrode 56 are enclosed in a vacuum envelope 61.
The electron beam emitted from the linear hot cathode 63 is focused on the converging electrode 6
The phosphor powder layer 56 is irradiated with phosphor powder 56 through a sulin (surin) 60 to cause it to emit light. As shown in FIG. 10, the light emitting points arranged in an array can be controlled by applying a potential of several tens of volts to the electron beam control electrode 66 provided below.
Control electron beams and switch light. The electron beam control electrode 56 is made of a transparent conductive film, and the light transmitted through the substrate glass 64 is focused and imaged onto the photosensitive drum via a SELFOC lens provided below.
発明が解決しようとする問題点
ところが、上記の様な、螢光電子管式アレイ光源には、
十分な輝度が得にくいという問題点があった。Problems to be Solved by the Invention However, the above-mentioned fluorescent electron tube array light source has the following problems:
There was a problem in that it was difficult to obtain sufficient brightness.
上記１）の方式のアレイ光源では、電子ビームのパワー
密度を上げることは難しく、十分な輝度は得られなかっ
た。また１１）の方式では、電子ビームを収束すること
によりビームパワー密度は上げることができるが、３０
０〜４００ ｍＷ／ｍｊの高パワー密度の電子ビームを
照射して３〜４ｍＷ／７１ｉ（の高光出力を得ようとし
ても、電子ビーム照射により螢光体粉末層表面の温度が
２ｏ○°Ｃ〜３００°Ｃにも達し、螢光体は温度消光を
おこし、発光効率は大幅に低下し、いくら電子ビームの
）（ワー密度を上げても、発光量は飽和してしまって、
高光出力は得にくかった。With the array light source of the method 1) above, it is difficult to increase the power density of the electron beam, and sufficient brightness cannot be obtained. In addition, in the method 11), the beam power density can be increased by converging the electron beam, but the
Even if an attempt is made to obtain a high optical output of 3 to 4 mW/71i (by irradiating an electron beam with a high power density of 0 to 400 mW/mj), the temperature of the surface of the phosphor powder layer due to electron beam irradiation will be 2°C to 40°C. At temperatures as high as 300°C, the phosphor undergoes temperature quenching, its luminous efficiency drops significantly, and no matter how high the electron beam density is, the amount of light emitted reaches saturation.
High light output was difficult to obtain.
本発明は、上記問題点を解決し、高アレイ密度で、且つ
、各発光素の光量を飛躍的に増加することのできる螢光
管式アレイ光源方式のプリンタ用線光源装置を提供する
ことを目的とする。The present invention aims to solve the above-mentioned problems and provide a line light source device for a printer using a fluorescent tube array light source system, which has a high array density and can dramatically increase the amount of light from each light emitting element. purpose.
問題点を解決するための手段
電子ビームを放射する線状もしくは帯状の熱陰極と、前
記電子ビームを加速する加速電極と、アレイ状に配列さ
れた複数の短冊状の電子ビーム制御電極が真空中に封入
されている構造のプリンタ用線光源装置において、誘電
体基板上に、透明で、少なくとも真空側及び前記基板側
界面が平滑な、光ガイド性を有する短冊状の螢光体発光
部をそれぞれの電子ビーム制御電極に対応してアレイ状
に形成し、しかも前記螢光体発光部の９１１ｊ縁端部表
面を光拡散表面状態で露出させるとともに、前記螢光体
発光部のｍＪ記−［１＋＋１縁端部以外の表面に、部分
的に、前記電子ビーム制御電極に導通した導電層を設け
た構造とし、前記側縁端部界面から外部に放射する光を
利用する。Means for Solving the Problem A linear or band-shaped hot cathode that emits an electron beam, an acceleration electrode that accelerates the electron beam, and a plurality of strip-shaped electron beam control electrodes arranged in an array are placed in a vacuum. In the line light source device for printers, a linear light source device for a printer has a structure in which a transparent strip-shaped phosphor light-emitting portion having a light guide property and having smooth interfaces at least on the vacuum side and the substrate side is provided on a dielectric substrate. are formed in an array corresponding to the electron beam control electrodes of the phosphor light emitting section, and the edge surface of the phosphor light emitting section 911j is exposed in a light diffusing surface state, and mJ of the phosphor light emitting section -[1++1 A conductive layer electrically connected to the electron beam control electrode is partially provided on the surface other than the edge portion, and light emitted to the outside from the side edge interface is utilized.
作 用
螢光体発光部表面に電子ビームが照射され発光した光の
うち、その法線となす角が螢光体発光部と誘電体基板の
屈折率比で決まる臨界角よシも大きな角で放射される光
線は真空側界面と基板側界面で全反射を繰シ返しながら
、螢光体発光部の側縁端部まで、はとんど減衰せず導か
れる。螢光体発光部の電子ビームが照射される表面の面
積は内面反射した光が射出される側縁端部の面積より広
いので、電子ビームのビームパワー密度がさほど高くな
くても、内面反射によシ導かれ側縁端部より射出される
光のパワーは大きくなる。螢光体発光部の電子ビームが
照射される表面の面積は、線光源アレイのピッチにかか
わらず、アレイ方向とは垂直の方向に短冊状に細長く広
げることができるため、側縁端部から射出される光パワ
ーもそれに応じて大きくできる。さらには、短冊状に広
く電子ビーム照射面積をとシ、且つ、電子ビームのパワ
ー密度を上げてやれば、側縁端部から射出される光のパ
ワーは、飛躍的に高まる。この際、螢光体発光部は、そ
の下の誘電体基板に密着しているため放熱性が良い。し
たがって発光部の温度消光による発光効率の低下はおこ
らない。また、螢光体発光部の側縁端部表面以外の表面
には、部分的に電子ビーム制御電極に導通した導電層を
設けであるので、ビーム電流量が大きくても、チャージ
アップは僅かで、実効電子ビームのパワーはほとんど低
下しない。Of the light emitted when an electron beam is irradiated onto the surface of the working phosphor light-emitting part, the angle it makes with the normal is a larger angle than the critical angle determined by the refractive index ratio of the phosphor light-emitting part and the dielectric substrate. The emitted light beam is repeatedly totally reflected at the vacuum-side interface and the substrate-side interface, and is guided without attenuation to the side edge of the phosphor light-emitting section. The area of the surface of the phosphor light-emitting part that is irradiated with the electron beam is larger than the area of the side edge where the internally reflected light is emitted, so even if the beam power density of the electron beam is not very high, it can be easily The power of the light that is guided further and emitted from the side edge becomes large. Regardless of the pitch of the line light source array, the area of the surface of the phosphor light-emitting section that is irradiated with the electron beam can be spread out into a long and thin strip in the direction perpendicular to the array direction, so that the electron beam is emitted from the side edge. The optical power generated can also be increased accordingly. Furthermore, if the electron beam irradiation area is widened in the form of a strip and the power density of the electron beam is increased, the power of the light emitted from the side edge portions can be dramatically increased. At this time, the fluorescent light emitting section has good heat dissipation because it is in close contact with the dielectric substrate underneath. Therefore, the luminous efficiency does not decrease due to temperature quenching of the light emitting part. In addition, a conductive layer that is partially electrically connected to the electron beam control electrode is provided on the surface of the fluorescent light emitting part other than the side edge surface, so even if the beam current is large, charge-up is slight. , the effective electron beam power hardly decreases.
また、側縁端部表面は光拡散性の表面状態であるため、
側縁端部表面から出射する光の放射強度は拡散性の角度
分布を示す。したがって、側縁端部表面の鉛直軸方向所
定の位置にセルフォックレンズを配することにより、出
射光をセルフォックレンズ系を介して、感光ドラム上に
、効率良く伝送することができる。In addition, since the side edge surface has a light-diffusing surface condition,
The radiant intensity of the light emitted from the side edge surfaces exhibits a diffuse angular distribution. Therefore, by arranging the SELFOC lens at a predetermined position in the vertical axis direction on the side edge surface, the emitted light can be efficiently transmitted onto the photosensitive drum via the SELFOC lens system.
以上の作用により、前記螢光体発光部の側縁端部が発光
素である本発明は、従来に比べて非常に高輝度のプリン
タ用線光源装置を実現する。As a result of the above-described effects, the present invention, in which the side edges of the phosphor light-emitting portion are light-emitting elements, realizes a line light source device for printers with much higher brightness than conventional printers.
実施例
第１〜第３図に本発明の一実施例を示す。１は真空外囲
器であシ、ガラス等で形成した容器である。真空外囲器
１の内面には、背面電極２が設けられており、外部から
の電界によって線状熱陰極３から放射される電子ビーム
が影響されないようにしている。４は基板ガラスで、真
空外囲器１と低融点ガラス等によ多接合して、内部を真
空にしている。基板ガラス４の表面には、短冊状の電子
ビーム制御電極６が一定の間隔で配列されている。Embodiment FIGS. 1 to 3 show an embodiment of the present invention. Reference numeral 1 denotes a vacuum envelope, which is a container made of wood, glass, or the like. A back electrode 2 is provided on the inner surface of the vacuum envelope 1 to prevent the electron beam emitted from the linear hot cathode 3 from being affected by an external electric field. Reference numeral 4 denotes a substrate glass, which is bonded to the vacuum envelope 1 with low melting point glass or the like to create a vacuum inside. On the surface of the substrate glass 4, strip-shaped electron beam control electrodes 6 are arranged at regular intervals.
電子ビーム制御電極６のピッチは、プリンタの必要解像
度によって決められる。本実施例は１６役物の解像度を
必要とする場合で、６２．５μｍピンチで、図内座漂の
ｙ軸方向に２９７Ｈにわたってアレイ状に形成されてい
る。電子ビーム制御電極５に隣接して基板ガラス４上に
、各々１１表面が平滑で透明な、光ガイドＩ３Ｅ、を有
する螢光体発光部６が形成されており、イの側縁端部７
がそれぞれの電子ビーム制御電極６に対応した発光素８
となる。The pitch of the electron beam control electrodes 6 is determined by the required resolution of the printer. In this embodiment, a resolution of 16 pixels is required, and the pixels are formed in an array over 297H in the y-axis direction in the figure with a pinch of 62.5 μm. On the substrate glass 4 adjacent to the electron beam control electrode 5, phosphor light emitting parts 6 each having a smooth and transparent light guide I3E are formed.
is a light emitting element 8 corresponding to each electron beam control electrode 6
becomes.
線状熱陰匝３と、螢光体発光部６の間には、所定の間げ
き全おいて加速電極９が設けられている。An accelerating electrode 9 is provided between the linear hot shade 3 and the fluorescent light emitting section 6 at a predetermined interval.
加速電極９は金属メソンユから成る格子電極である。The accelerating electrode 9 is a grid electrode made of metal mesh.
線状熱陰極は、直径２０〜ｓ ｏ ｐｍのタングステン
線表面に酸化物放射材料を電着等によって設けたものを
使用することができる。線状熱陰極３は、必要電子ビー
ム電流量に応じて所定の本数架張する。線状熱陰極３か
ら放射された電子ビームは、加速電極９の電位によって
加速電極９に向は加速される。電子ビーム制御電極５に
は、ワイアポンド等によシ接続されている駆動用ＬＳＩ
よシ、画像信号に応じた所定の電位が駆動回路側から与
えられ、加速電極９にｓｏＶの正電位が与えられている
状態で、例えば、ある電子ビーム制御電極５にＳＯＶの
電位が与えられ、その他の電子ビーム制御電極５の電位
がｏＶの場合、ＳＯＶの電位と与えられた電子ビーム制
御電極５上の螢光体発光部にのみ選択的に、加速電極９
のメツシュを通過した電子ビームを照射することができ
る。なお電子ビームのクロストークを防ぐため、加速電
極９と螢光体発光部６との間げきは２００μｍと狭い。As the linear hot cathode, one in which an oxide emissive material is provided on the surface of a tungsten wire having a diameter of 20 to so pm by electrodeposition or the like can be used. A predetermined number of linear hot cathodes 3 are installed depending on the required electron beam current amount. The electron beam emitted from the linear hot cathode 3 is accelerated toward the acceleration electrode 9 by the potential of the acceleration electrode 9. A driving LSI connected to the electron beam control electrode 5 by a wire pond or the like is connected to the electron beam control electrode 5.
In a state where a predetermined potential according to an image signal is applied from the drive circuit side and a positive potential of soV is applied to the accelerating electrode 9, for example, when a certain electron beam control electrode 5 is applied with an SOV potential. , when the potential of the other electron beam control electrodes 5 is oV, the accelerating electrode 9 is selectively applied only to the SOV potential and the phosphor light-emitting portion on the given electron beam control electrode 5.
can be irradiated with an electron beam that has passed through the mesh. In order to prevent crosstalk of the electron beam, the gap between the accelerating electrode 9 and the fluorescent light emitting section 6 is as narrow as 200 μm.
螢光体発光部は、数１０■の低速電子線でも高い発光効
率で発光する、ＺｎＯ：Ｚｎ螢光体より形成されている
。電子ビームの照射によりその表面で発光した光のうち
、表面の法線となす角が基板ガラス４とＺｎＯ： Ｚｒ
１螢光体との屈折率比によってきまる臨界角よシ大きい
角度で出射する光は、螢光体内を全反射によシ側縁端部
７にまで導かれ発光する（出射光１０）。発光素８よシ
出射した光は、Ｘ軸方向の所定の位置に発光素列１１に
平行に配置されたセルフォ１ツクレンズを介して、感光
ドラム上に集光、結像される。The phosphor light-emitting portion is made of a ZnO:Zn phosphor that emits light with high luminous efficiency even with a low-speed electron beam of several tens of square meters. Of the light emitted from the surface by electron beam irradiation, the angle between the surface normal line and the substrate glass 4 and ZnO: Zr
The light emitted at an angle larger than the critical angle determined by the refractive index ratio with respect to the phosphor 1 is guided to the side edge 7 by total internal reflection within the phosphor and emits light (emitted light 10). The light emitted from the light-emitting element 8 is focused and imaged onto the photosensitive drum via a self-photo lens arranged parallel to the light-emitting element array 11 at a predetermined position in the X-axis direction.
次に、本発明の作用と効果を、上記実施例に基づいて説
明する。第２図は、螢光体発光部付近の拡大斜視図、第
３図はそのｙ面の断面図である。Next, the functions and effects of the present invention will be explained based on the above embodiments. FIG. 2 is an enlarged perspective view of the fluorescent light emitting portion and its vicinity, and FIG. 3 is a y-plane cross-sectional view thereof.
本実施例では、電子ビーム制御電極６は、チタンタング
ステン、モリブデン等の金属蒸着膜で、側面金属コート
１２．背面金属コート１３は前記金属蒸着膜もしくはア
ルミニウム蒸着膜である。厚さは約２０００八である。In this embodiment, the electron beam control electrode 6 is a metal vapor-deposited film of titanium tungsten, molybdenum, etc., and the side metal coating 12. The back metal coat 13 is the metal vapor deposited film or aluminum vapor deposited film. The thickness is approximately 2,000 mm.
螢光体発光部６は、厚さ３０μｍ、幅５０μｍ、長さ２
０１１１Ｎの短冊状のＺｎＯ：Ｚｎ螢光体薄膜で、可視
光に対する吸収は小さく、ＺｎＯ：Ｚｎの発光波長であ
る５ ００ ｎｍ付近の波長の光は低減衰で進行する。The fluorescent light emitting section 6 has a thickness of 30 μm, a width of 50 μm, and a length of 2
0111N strip-shaped ZnO:Zn phosphor thin film has low absorption of visible light, and light with a wavelength around 500 nm, which is the emission wavelength of ZnO:Zn, travels with low attenuation.
しかも、螢光体発光部６と真空もしくは基板ガラス４と
の界面は非常に平滑なのでこの螢光体発光部６は対向す
る平行な界面での全反射による光ガイド性を有する。Furthermore, since the interface between the phosphor light emitting section 6 and the vacuum or the substrate glass 4 is very smooth, the phosphor light emitting section 6 has light guiding properties due to total reflection at the opposing parallel interfaces.
第３図において、５ｏｅＶの入射エネルギーで入射した
電子ビーム束１４の侵入長は数１０人程度と非常に浅く
、発光も、短い寿命で、表層付近でおこる。いま、螢光
体発光部６０表層部の微小面ｄＡ（１５） よシ放射
された光は、拡散性の放射強度分布工（のを示す。即ち
、ここでは
！（の＝ＬＯＣＯ３θｄＡ ・・・・
・・・・・・・・・・（１）Ｌ０＝一定
θ：螢光体発光部表面の法線と光線がなす角波長５００
ｎｍの光に対する螢光体発光部６の屈折率はｎ ｐｍ
２−０７ 、同じく基板ガラスの屈折率はｎｇ＝１．
５０である。したがって、螢光体発光部６と真空との界
面（以後界面Ｖとよぶ）での臨界角及び螢光体発光部６
と基板ガラス４との界面（以後界面ｑ）での臨界角はそ
れぞれ
である。In FIG. 3, the penetration depth of the electron beam bundle 14 incident with an incident energy of 5 oeV is very shallow, on the order of several tens of beams, and the light emission is short-lived and occurs near the surface layer. Now, the light emitted from the microscopic surface dA(15) of the surface layer of the phosphor light-emitting part 60 shows a diffuse radiation intensity distribution (=LOCO3θdA...)
・・・・・・・・・・・・(1) L0 = Constant θ: Angular wavelength between the normal to the surface of the phosphor light-emitting part and the light ray: 500
The refractive index of the fluorescent light emitting part 6 for light of nm is npm.
2-07, similarly, the refractive index of the substrate glass is ng=1.
It is 50. Therefore, the critical angle at the interface between the phosphor light emitting section 6 and vacuum (hereinafter referred to as interface V) and the phosphor light emitting section 6
The critical angles at the interface (hereinafter referred to as interface q) between the substrate glass 4 and the substrate glass 4 are different from each other.
したがって、θ〉θＣ９の放射束のみ界面Ｖ及びｑで全
反射しながら、理想的には減衰せず螢光体光ガイド部１
６を経てＸ軸方向へ伝播してゆく。Therefore, only the radiant flux of θ〉θC9 is totally reflected at the interfaces V and q, and ideally it is not attenuated and the phosphor light guide section 1
6 and propagates in the X-axis direction.
θくθＣｑの光については、界面で基板ガラス４もしく
は真空側に透過してゆく成分と、フレネル反射によって
内部へ再び反射される成分とがある。Regarding the light of θ Cq, there is a component that passes through the interface toward the substrate glass 4 or the vacuum side, and a component that is reflected back into the interior by Fresnel reflection.
フレネル反射成分については、幾度か反射するうちに急
速に０に近づいてゆき、伝播してゆかない。As for the Fresnel reflection component, it rapidly approaches 0 after being reflected several times and does not propagate.
基板ガラス４側への透過成分については、基板側光吸収
層１７が外部の基板ガラス４０表面にスクリーン印刷等
により形成されており、他の発光素に対応した螢光体発
光部へのフレア光とならない様にしている。Regarding the transmitted component to the substrate glass 4 side, a substrate side light absorption layer 17 is formed on the surface of the external substrate glass 40 by screen printing or the like, and flare light is transmitted to the phosphor light emitting parts corresponding to other light emitting elements. I try not to do that.
いま簡単のため、伝播中に光減衰が全くないとし、全反
射した光はすべて側縁端部７にまで到達すると仮定する
と、全放射束工、。、に対して側縁端部７にまで到達し
た光バヮーエの比は＝ １−５ｉｎ θｑ
＝ｃ０Ｓ２θ９
＝４７．５％ ・旧・・・・・・旧・・（４）
側縁端部７の界面（以後界面ｅ）についても、非常に細
かい粗面であシ、微視的に見てやった場合、ある光線が
その表面と交わる角度は、Ｑｏから９０°の間ですべて
等しい確率で分布していると仮定する。また、界面ｅで
の７レネル反射も小さいとして無視して、単に全反射成
分のみが反射して出射されず、残りはすべて出射すると
すれば、界面θに入射する光バワーエｉユに対して出射
する元のパワーエ。。、の比は単に
■。。ｔ ／工ｉｎ ”ψｃｖ／９０°＝３２．１％・
川・・・・（６）−１”ｖ
但しψＱｖ：５Ｉ１１ ５＝θＣｖ
ψは界面ｅの法線と入射光の
なす角
となる。また入射光強度はＬｃｏｓθ即ち］、ｓｉｎψ
の角度分有金もつが界面ｅから出射する光強度は、拡散
性の、即ちＬ ｃｏｓ ｔ７に近い角度分布をもつと考
えてよい。For the sake of simplicity, let us assume that there is no optical attenuation during propagation and that all the totally reflected light reaches the side edge 7.The total radiant flux is: , the ratio of the optical beam that has reached the side edge 7 is = 1-5 in θq = c0S2θ9 = 47.5% - Old... Old... (4)
The interface of the side edge 7 (hereinafter referred to as interface e) is also a very fine rough surface, and when viewed microscopically, the angle at which a certain light ray intersects with that surface is between 90 degrees from Qo. Assume that all are distributed with equal probability. In addition, if we ignore the 7-Renel reflection at the interface e as being small and only the total reflection component is reflected and not emitted, and all the rest is emitted, the light incident on the interface θ is emitted from the power source i. The original power to do. . , the ratio of is simply ■. . t/work in ”ψcv/90°=32.1%・
River...(6)-1"v However, ψQv: 5I11 5=θCv ψ is the angle between the normal to the interface e and the incident light. Also, the intensity of the incident light is Lcosθ, that is, ], sinψ
The light intensity emitted from the interface e can be considered to be diffuse, that is, to have an angular distribution close to L cos t7.
したがって螢光体発光部での全発光エネルギーψｔｏｔ
に対して出射光エネルギーΦ。ｕｔＯ比は、（４） ｊ
（５）よ〕、
Φ。ｕｔ／Φ１ｎ＝＝４７．５％Ｘ３２．１％＝１５．
２％ ・・・・・・・・・・・・・・・（６）
したがってエネルギー密度比Ｍ。ｕｔ／／Ｍｉｎ はそ
れぞれの面積ｙｆＩ：ＳＡ、ＳＢとすればＭｏｕｔ／Ｍ
、ｎ＝５Ａ／ＳＢ×Φｏｕｔ”ｉｎ＝ １． Ｏｉｊ／
１．ｅ ｘ １ｏ−％ノＸ １５．２％＝１００倍
・・・・・・・・・（７）となる。Therefore, the total luminous energy ψtot in the fluorescent light emitting part
For the output light energy Φ. The utO ratio is (4) j
(5), Φ. ut/Φ1n==47.5%X32.1%=15.
2% ・・・・・・・・・・・・・・・(6)
Therefore, the energy density ratio M. ut//Min is the area yfI:SA, SB, then Mout/M
, n=5A/SB×Φout”in=1.Oij/
1. e x 1o-%ノX 15.2% = 100 times
......(7).
しかし、実際には、様々な光損失がある。However, in reality, there are various optical losses.
いま界面ｅからＩの距離の微小面ｄＡから角度θでｙ方
向に出た光の減衰を考えると、まず、螢光体内部の吸収
によるロスがある。Now, when considering the attenuation of light emitted in the y direction at an angle θ from the microscopic surface dA at a distance I from the interface e, there is first a loss due to absorption inside the phosphor.
螢光体の吸収係数をαとすると
ｅｘｐ （−αＸ／３１１１０） ・・・・
・・・・・・・・（８）で表わされる。それから、界面
ｖ、ｑは実際には理想的な全反射面ではなく、小さな凹
凸等によシＡｖ、ｇの損失があるとすると、全反射によ
るトータルの損失は、
（１−ス、＋ｇ）ｚ／ａ ｔａｎ ｆｌ −−”
・”・（９）但しαは螢光体発光部の厚さ
したがって、ｙ面内界面ｅにむかっての光伝播のみを考
えても
ｅｘｐ（−αｘ／ｓｉｎθ）ｘ（１−Ｘ）”／”―θ−
・−・（１ｏ）の光減衰がある。If the absorption coefficient of the phosphor is α, then exp (-αX/31110)...
......It is expressed as (8). Then, assuming that the interfaces v and q are not actually ideal total reflection surfaces, and there are losses of Av and g due to small irregularities, the total loss due to total reflection is (1-s, +g) z/a tan fl --”
・”・(9) However, α is the thickness of the phosphor light-emitting part. Therefore, even if we consider only the light propagation towards the interface e in the y-plane, exp(-αx/sinθ)x(1-X)”/ ”-θ-
There is an optical attenuation of ...(1o).
また、他にも側面金属コート１２．背面金属コ−）１３
．側縁端部７等における７レネル反射による損失の寄与
があシ、側縁端部７よシ出てくる出射光の発光エネルギ
ーに対する比は実際には（６）。In addition, there are also side metal coats 12. Back metal code) 13
．． Since there is a contribution of loss due to 7-Renel reflection at the side edge 7, etc., the ratio of the emitted light coming out from the side edge 7 to the luminous energy is actually (6).
（７）よシかなり小さくなる。(7) It becomes considerably smaller.
次に、ＺｎＯ：Ｚｎ螢光体自体、ＣＲＴ用螢光体とは異
なシ比抵抗は１０３〜１０５Ω・備とかなり低抵抗で電
子ビームとして螢光体発光部６に入射する電荷は、側面
金属コート１２もしくは背面金属コート１３を介して電
子ビーム制御電極６へ流れるため照射電流量を増加させ
ても、チャージアップによる実効入射ｌヒ子ビームパワ
ーの減少はなく、発７：着を相当高めることができる。Next, the ZnO:Zn phosphor itself has a specific resistance of 103 to 105 Ω, which is different from that of a CRT phosphor. Since the electron beam flows to the electron beam control electrode 6 via the coat 12 or the back metal coat 13, even if the irradiation current amount is increased, the effective incident beam power does not decrease due to charge-up, and the emission rate can be considerably increased. Can be done.
また、入射する電子ビームのパワーを上げても、螢光体
発光部６と基板ガラス４は密着しており、熱放散が良い
ため、従来の粉末層状螢光体面でおこっていた温度消光
は回避でき、エネルギー発光効率は減少せず、発光量を
相描高めることができる。In addition, even if the power of the incident electron beam is increased, the phosphor light emitting part 6 and the substrate glass 4 are in close contact and heat dissipation is good, so the temperature quenching that occurs with the conventional powder layered phosphor surface is avoided. Therefore, the energy emission efficiency does not decrease, and the amount of light emission can be significantly increased.
螢光体発光部６の成膜方法としては、基板ガラス表面を
鏡面研磨した上に、まず、スパッタ法によりＺｎ○薄膜
を６ｏ〜１００人堆製し、その上に、こんどは、水素ガ
スをキャリアガスとした気相輸送法によりＺｎ○：Ｚｎ
薄膜層を３ｏ／ｉｍ堆積したところ、表面が非常に平滑
な、低光損失の膜を得ることができた。このスパッタ法
によってあらかじめＺｎＯ薄膜層を薄く堆積しておく方
法によシ、低光損失の膜を得たという報告は以前にある
（例えば、ティー、シオサキ（Ｔ、５ｈＬｏｓａｋｉ
） 、 ニス。The method for forming the phosphor light-emitting section 6 is to first deposit 6 to 100 Zn○ thin films by sputtering on the glass surface of the substrate, which is mirror-polished, and then to apply hydrogen gas on top of it. Zn○:Zn by vapor phase transport method using carrier gas
When the thin film layer was deposited at 30/im, a film with a very smooth surface and low optical loss could be obtained. It has previously been reported that films with low optical loss were obtained by pre-depositing a thin ZnO film layer using this sputtering method (for example, T., Shiosaki et al.
), varnish.
オー二’／ （Ｓ、０ｈｎｉｓｈｉ）、アンド、エイ、
カワバタ（Ａ 、 Ｋａｗａｂａ ｔ ａ ） ；ジャ
ーナルオプアプ、ｌｙイドフィジックス（Ｊ 、Ａｐｐ
ｌ 、Ｐｈｙｓ、）５（Ｘ５） （１９７９）３１１３
Ｐ〜３１１７Ｐ）。また、気相輸送によるＺｎ○：Ｚｎ
ｎ螢光全発光ノー形成は、例えば特願昭６１−２２８９
８１号に示された装置に類似の装置で行った。Ohni'/ (S, 0hnishi), and, ei,
Kawabata (A, Kawabata) ; Journal Op-App, Lyoid Physics (J, App
l, Phys, )5(X5) (1979) 3113
P~3117P). In addition, Zn○:Zn by gas phase transport
For example, Japanese Patent Application No. 61-2289
It was carried out on an apparatus similar to that shown in No. 81.
また側縁端部７において、＃４００〜＃１０００ていど
のサンドペーパーでその表面を粗面化することにより、
良好な光拡散性表面を得ることができた。これは、サン
ドブラスト法やエツチング法等によっても同様の効果を
有する。In addition, by roughening the surface of the side edge portion 7 with sandpaper of #400 to #1000,
A good light-diffusing surface could be obtained. Similar effects can be obtained by sandblasting, etching, etc.
得られた本実施例に示すプリンタ用線光源装置において
、線状熱陰極５本から計１００ ｍＡ々の電流密度の電
子ビームを電子ビーム制御電極５からｓｏＶの電圧を印
加した螢光体発光部に照射することによシ、発光素８か
ら約６μ鴇佛元素の放射パワーを得ることができた。ま
た、フレア光による光漏話はなく、輝度バラツキは５％
以内であった。出射光１ｏは拡散性の放射強度分布を示
した。発光素列１１と所定の間隔をおいて平行に設置し
たセルフォックレンズアレイを介して、出射光を感光体
ドラムに集光、結像することによシ、高速、高解像度、
高印字品質の電子写真式光プリンターを実現することが
できた。In the obtained line light source device for a printer shown in this example, an electron beam with a total current density of 100 mA was applied from five linear hot cathodes to a phosphor light emitting unit to which a voltage of soV was applied from the electron beam control electrode 5. By irradiating the light, it was possible to obtain a radiation power of approximately 6 μm from the light-emitting element 8. In addition, there is no optical crosstalk due to flare light, and the brightness variation is 5%.
It was within The emitted light 1o showed a diffuse radiation intensity distribution. By condensing and imaging the emitted light onto the photoreceptor drum through a SELFOC lens array installed in parallel with the light emitting element array 11 at a predetermined interval, high speed, high resolution,
We were able to realize an electrophotographic optical printer with high print quality.
第４図から第６図に、本発明の他の実施例を示す。全体
の構成は実施例１と同様で第１図に示す通りであるが、
各螢光体発光部６の近傍の構成に以下のような違いがあ
る。Other embodiments of the present invention are shown in FIGS. 4 to 6. The overall configuration is the same as that of Example 1, as shown in FIG.
There are the following differences in the configuration near each fluorescent light emitting section 6.
本実施例において第４図は螢光体発光部付近の拡大斜視
図、第５図は同螢光体発光部のｙ面断面図、第６図は螢
光体発光部付近をＺ軸方向から見た図である。In this embodiment, Fig. 4 is an enlarged perspective view of the vicinity of the fluorescent light emitting part, Fig. 5 is a y-plane sectional view of the fluorescent light emitting part, and Fig. 6 is a view of the vicinity of the fluorescent light emitting part from the Z-axis direction. This is a view.
本実施例においては、電子ビーム制御電極６に導通した
導電層として、第６図、第６図に示すように、基板ガラ
ス４と螢光体発光部６の間に、螢光体発光部６の一直下
にＩ軸方向に等間隔で形成された梯子状の部分的な導電
層２０が設けられている。導電層２０は電子ビーム制御
電極６と同じチタン、タングステンもしくはモリブデン
の金属薄膜またはネサ膜等の透明導電膜でも良い。本実
施例では膜厚約２０ｏｏへのチタン薄膜を用いた。In this embodiment, as a conductive layer electrically connected to the electron beam control electrode 6, a phosphor light emitting part 6 is provided between the substrate glass 4 and the phosphor light emitting part 6, as shown in FIGS. Ladder-shaped partial conductive layers 20 formed at equal intervals in the I-axis direction are provided immediately below the conductive layer 20 . The conductive layer 20 may be the same metal thin film of titanium, tungsten, or molybdenum as the electron beam control electrode 6, or a transparent conductive film such as a NESA film. In this example, a titanium thin film having a thickness of about 20 oo was used.
一方、第４図において、側面光遮蔽コート２１゜背面光
遮蔽コート２２はＺｎＯ：Ｚｎ製の螢光体発光部６よシ
も低屈折率の光非透過性の誘電体薄膜で形成されている
。On the other hand, in FIG. 4, the side light shielding coat 21 and the rear light shielding coat 22 are formed of a light-opaque dielectric thin film with a low refractive index, as is the ZnO:Zn phosphor light emitting section 6. .
実施例１同様、電子ビームの照射によシその表面で発光
した光のうち、表面の法線とする角θが基板ガラス４と
ＺｎＯ：Ｚｎ螢光体との屈折率比できまる臨界角より大
きい角度で出射する光は、大部分は螢光体と基板ガラス
４との界面及び真空との界面で全反射する。一方、部分
的に設けられた梯子状の導電層２ｏとの界面での反射は
、フレネル反射で、若干光強度は減衰する。光は、これ
らの反射を繰り返しながら、螢光体内を伝播し、側縁端
部７にまで到達し発光する（出射光１０）。As in Example 1, of the light emitted from the surface by electron beam irradiation, the angle θ with respect to the normal to the surface is smaller than the critical angle determined by the refractive index ratio of the substrate glass 4 and the ZnO:Zn phosphor. Most of the light emitted at a large angle is totally reflected at the interface between the phosphor and the substrate glass 4 and at the interface with the vacuum. On the other hand, reflection at the interface with the partially provided ladder-shaped conductive layer 2o is Fresnel reflection, and the light intensity is slightly attenuated. The light propagates within the phosphor while repeating these reflections, reaches the side edge portion 7, and emits light (outgoing light 10).
なお、第６図、第６図では梯子状の部分的な導電層２ｏ
は３本しか示されていないが、実際には本実施例では１
本の幅が６０μｍで、螢光体発光部６の！軸方向の長さ
２Ｏｆｆ内に、１′ｎＩピツチで計２０本形成した。In addition, in FIGS. 6 and 6, a ladder-shaped partial conductive layer 2o
Although only three are shown, in reality, in this example, one
The width of the book is 60 μm, and the fluorescent light emitting part 6! A total of 20 pieces were formed at a 1'nI pitch within an axial length of 2Off.
本実施例における作用と効果も、はぼ実施例１と同様で
あるが、前述の様に導電層２ｏとの界面での光の反射の
ロスがあシ、光伝達効率は実施例１に比べれば低下する
。The functions and effects of this example are similar to those of Example 1, but as described above, there is a loss of light reflection at the interface with the conductive layer 2o, and the light transmission efficiency is lower than that of Example 1. decreases.
即ち、実際の光損失は、実施例１と同様に、界面ｅから
Ｘの距離の微小面ｄＡから角度θでｙ方向に出た光の減
衰を考えると、螢光体内吸収によるロス分、
ｅｘｐ（−αｘ／ｓｉｎθ）・・・・・・・・・・・（
１１）全反射面におけるロス分、
（・−λｖ、ｇ ）（ｘ“ａ −”’（０））、、、、
、、、、、 （，２＞但しｎ′は導電層２０との
界面での反射回数
の他に新たに、
導電層２０との界面でのフレネル反射によるロス分、（
１−Ｒｆ（＃）） ”（０）・−・−−−−−−−・・
（１３）但しＲｆ（のフレネル反射のエ
ネルギー反射率
が乗算される。That is, as in Example 1, considering the attenuation of light emitted in the y direction at an angle θ from the microscopic surface dA at a distance of X from the interface e, the actual optical loss is the loss due to absorption within the fluorophore, exp (-αx/sinθ)・・・・・・・・・・・・(
11) Loss at total reflection surface, (・−λv,g)(x“a−”′(0)),,,
,,,,, (,2>However, n' is the loss due to Fresnel reflection at the interface with the conductive layer 20, in addition to the number of reflections at the interface with the conductive layer 20, (
1-Rf(#)) ”(0)・−・−−−−−−・・
(13) However, the energy reflectance of Fresnel reflection of Rf is multiplied.
しかし、梯子状の部分的な導電層２ｏの面積は、螢光体
発光部６及び螢光体光ガイド部１６と基板ガラス４との
界面の全面積の１７２０．で、導電層２゜におけるフレ
ネル反射のロス分は小さい。However, the area of the ladder-shaped partial conductive layer 2o is 1720.0% of the total area of the interface between the phosphor light emitting section 6 and the phosphor light guide section 16 and the substrate glass 4. Therefore, the Fresnel reflection loss at 2° of the conductive layer is small.
その他、側面光遮蔽コート２１．背面光遮蔽コ−）２２
．側縁端部７等におけるフレネル反射による光損失があ
ることは、実施例１と同様である。Other side light shielding coats 21. Rear light shielding code) 22
．． As in Example 1, there is optical loss due to Fresnel reflection at the side edge portions 7 and the like.
ところで、ＺｎＯ：Ｚｎ螢光体自体、ＣＲＴ用螢光体と
は異なシ、比抵抗は１０３〜１０５Ω・１と低抵抗で、
電子ビームとして螢光体発光部６に入射する電荷は、螢
光体発光部直下におかれた、梯子犬の導電層２ｏを介し
て、電子ビーム制御電極５へ流れるため、照射電流量を
増加させても、チャージアップによる実効入射電子ビー
ムノ（ワーの減少は少なく発光量を相当高めることがで
きる。By the way, the ZnO:Zn phosphor itself is different from the CRT phosphor, and has a low specific resistance of 103 to 105 Ω・1.
The charge that enters the phosphor light emitting section 6 as an electron beam flows to the electron beam control electrode 5 via the conductive layer 2o of the ladder placed directly below the phosphor light emitting section, increasing the amount of irradiation current. Even if it is, the effective incident electron beam power due to charge-up is not significantly reduced, and the amount of light emitted can be considerably increased.
また、入射する電子ビームのパワーを上げても、螢光体
発光部６と基板ガラス４は密着しており、熱放散が良い
ため、従来の粉末層状螢光体面でおこっていた温度消光
は回避でき、エネルギー発光効率は減少せず、発光量を
相当高めることができる。In addition, even if the power of the incident electron beam is increased, the phosphor light emitting part 6 and the substrate glass 4 are in close contact and heat dissipation is good, so the temperature quenching that occurs with the conventional powder layered phosphor surface is avoided. Therefore, the energy emission efficiency does not decrease, and the amount of light emission can be considerably increased.
螢光体発光部６の成膜方法についても、基板ガラス表面
を鏡面研磨した上に、まず導電層２ｏを蒸着し、所定の
形状にパターンニングしてやった上で、実施例１と同じ
気相輸送法を用いた。Regarding the film formation method of the phosphor light emitting part 6, the conductive layer 2o is first vapor-deposited on the substrate glass surface, which is mirror-polished, and then patterned into a predetermined shape. The law was used.
得られた本実施例に示すプリンタ用線光源装置において
、線状熱陰極５本から計１００ｍＡ／’ｚの電流密度の
電子ビームを電子ビーム制御電極６から５０Ｖの電圧を
印加した螢光体発光部６に照射することによシ、発光素
８から約４．５μＷ／発元素の放射パワーを得ることが
できた。また、フレア光による光漏話はなく、輝度バラ
ツキは６％以内であった。出射光１ｏは拡散性の放射強
度分布を示した。発光素列１１と所定の間隔をおいて平
行に設置したセルフォックレンズアレイを介して、出射
光を感光体ドラムに集光、結像することにより、高速、
高解像度、高印字品質の電子写真式光プリンターを実現
することができた。In the obtained line light source device for a printer shown in this example, an electron beam with a total current density of 100 mA/'z was emitted from five linear hot cathodes and a voltage of 50 V was applied from the electron beam control electrode 6. By irradiating the light emitting element 6, a radiation power of about 4.5 μW/emitting element could be obtained from the light emitting element 8. Further, there was no optical crosstalk due to flare light, and the luminance variation was within 6%. The emitted light 1o showed a diffuse radiation intensity distribution. By condensing and imaging the emitted light onto the photoreceptor drum through a SELFOC lens array installed in parallel with the light emitting element array 11 at a predetermined interval, high-speed,
We were able to create an electrophotographic optical printer with high resolution and high print quality.
発明の効果
本発明により、コンパクトで、汎用感光体との波長マツ
チングの良い、高輝度、低輝度バラツキの電子写真式光
プリンタ用線光源装置が容易に実現できる。それにより
、コンパクトな高速高印字品質の電子写真式プリンタ等
が安価に実現できる。Effects of the Invention According to the present invention, it is possible to easily realize a line light source device for an electrophotographic optical printer that is compact, has good wavelength matching with a general-purpose photoreceptor, and has high brightness and low brightness variations. As a result, a compact electrophotographic printer with high speed and high print quality can be realized at low cost.
第１図は本発明の一実施例におけるプリンタ用線光源装
置の斜視図、第２図は同実施例におけるプリンタ用線光
源装置の螢光体発光部付近の拡大斜視図、第３図は同螢
光体発光部のｙ面での断面図、第４図は本発明の他の実
施例におけるプリンタ用線光源装置の螢光体発光部付近
の拡大斜視図、第５図は同螢光体発光部のｙ面での断面
図、第６図は同螢光体付近部分近をＺ軸方向からみた図
、第７図は従来のＬＥＤアレイを用いたプリンタ用線光
源装置の一部切欠いた斜視図、第８図は同プリンタ用線
光源装置のアレイチップ部の拡大平面図、第９図は従来
の螢光管式プリンタ用線光源装置の一部切欠いた斜視図
、第１０図は同螢光体付近部分の拡大断面図を示す。
３・・・・・・線状熱陰極、４・・・・・・基板ガラス
、５・・・・・・電子ビーム制御電極、６・・・・・・
螢光体発光部、７・・・・・・側縁端部、８・・・・・
・発光素、９・・・・・・加速電極、１゜・・・・・・
出射光、１２・・・・・・側面金属コート、２ｏ・・・
・・・導電層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
１ム墓板側九吸収壜
第８図
刀〃ドブ
第９図
第１０図
、ｓｄ、ｓｓFIG. 1 is a perspective view of a line light source device for a printer according to an embodiment of the present invention, FIG. 2 is an enlarged perspective view of the vicinity of the fluorescent light emitting part of the line light source device for a printer according to the same embodiment, and FIG. 3 is the same. FIG. 4 is an enlarged perspective view of the vicinity of the fluorescent light emitting section of a line light source device for a printer according to another embodiment of the present invention, and FIG. 5 is a sectional view of the fluorescent light emitting section in the y plane. Figure 6 is a cross-sectional view of the light emitting unit in the y-plane, Figure 6 is a view of the vicinity of the phosphor as seen from the Z-axis direction, Figure 7 is a partially cutaway view of a line light source device for printers using a conventional LED array. 8 is an enlarged plan view of the array chip section of the line light source device for printers, FIG. 9 is a partially cutaway perspective view of the conventional line light source device for fluorescent tube type printers, and FIG. 10 is the same. An enlarged cross-sectional view of a portion near the phosphor is shown. 3... Linear hot cathode, 4... Substrate glass, 5... Electron beam control electrode, 6...
Fluorescent light emitting part, 7...Side edge end, 8...
・Light emitting element, 9... Accelerating electrode, 1°...
Outgoing light, 12...Side metal coating, 2o...
...conductive layer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 1 Mu Grave Plate Side 9 Absorption Bottle Figure 8 Sword Dough Figure 9 Figure 10, sd, ss
Claims (1)
と、前記電子ビームを加速する加速電極と、アレイ状に
配列された複数の短冊状の電子ビーム制御電極が真空中
に封入されている構造のプリンタ用線光源装置において
、誘電体基板上に、透明で少なくとも真空側及び前記基
板側界面が平滑な、光ガイド性を有する短冊状の螢光体
発光部がそれぞれの電子ビーム制御電極に対応してアレ
イ状に形成されており、しかも前記螢光体発光部の側縁
端部表面が光拡散表面状態で露出しており、前記螢光体
発光部の前記側縁端部以外の表面に、部分的に、前記電
子ビーム制御電極に導通した導電層を設けた構造を有し
、前記側縁端部界面から外部に放射する光を利用するこ
とを特徴とするプリンタ用線光源装置。 （２）螢光体発光部の面積が、その側縁端部の面積の２
０倍以上であることを特徴とする特許請求の範囲第１項
に記載のプリンタ用線光源装置。 （３）電子ビーム制御電極に導通した導電層が、螢光体
発光部の隣接する螢光体発光部に面した側面に形成され
た導電性被覆であることを特徴とする特許請求の範囲第
１項に記載のプリンタ用線光源装置。 （４）電子ビーム制御電極に導通した導電層が、螢光体
発光部と誘電体基板との間に部分的に部分的に形成され
た導電性薄膜であって、前記導電性薄膜の面積が、前記
螢光体発光部の面積の１／１０以下であることを特徴と
する特許請求の範囲第１項に記載のプリンタ用線光源装
置。 （２）螢光体発光部が、低速電子線励起螢光体薄膜であ
ることを特徴とする特許請求の範囲第１項に記載のプリ
ンタ用線光源装置。 （６）低速電子線励起螢光体薄膜がＺｎＯ：Ｚｎより形
成されていることを特徴とする特許請求の範囲第１項に
記載のプリンタ用線光源装置。[Scope of Claims] (1) A linear or strip-shaped hot cathode that emits an electron beam, an acceleration electrode that accelerates the electron beam, and a plurality of strip-shaped electron beam control electrodes arranged in an array are arranged in a vacuum. In the line light source device for a printer, the linear light source device for a printer has a structure in which a dielectric substrate is provided with a transparent strip-shaped phosphor light emitting portion having a light guide property and having smooth interfaces at least on the vacuum side and the substrate side. are formed in an array corresponding to the electron beam control electrodes of the phosphor light emitting section, and the side edge end surface of the phosphor light emitting section is exposed as a light diffusing surface, and the side edge of the phosphor light emitting section is exposed as a light diffusing surface. It has a structure in which a conductive layer that is electrically connected to the electron beam control electrode is partially provided on the surface other than the edge, and the light emitted to the outside from the side edge interface is utilized. Line light source device for printers. (2) The area of the fluorescent light emitting part is 2 of the area of its side edge.
The line light source device for a printer according to claim 1, wherein the light source is 0 times or more. (3) The conductive layer electrically connected to the electron beam control electrode is a conductive coating formed on the side surface of the phosphor light-emitting section facing the adjacent phosphor light-emitting section. The line light source device for printers according to item 1. (4) The conductive layer electrically connected to the electron beam control electrode is a conductive thin film partially formed between the phosphor light emitting part and the dielectric substrate, and the area of the conductive thin film is The line light source device for a printer according to claim 1, wherein the area of the fluorescent light emitting section is 1/10 or less. (2) The line light source device for a printer according to claim 1, wherein the phosphor light emitting section is a phosphor thin film excited by a slow electron beam. (6) The line light source device for a printer according to claim 1, wherein the low-speed electron beam-excited phosphor thin film is formed of ZnO:Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9895787A JPH0829604B2 (en) | 1987-04-22 | 1987-04-22 | Line light source device for printer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9895787A JPH0829604B2 (en) | 1987-04-22 | 1987-04-22 | Line light source device for printer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63264379A true JPS63264379A (en) | 1988-11-01 |
| JPH0829604B2 JPH0829604B2 (en) | 1996-03-27 |
Family
ID=14233564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9895787A Expired - Lifetime JPH0829604B2 (en) | 1987-04-22 | 1987-04-22 | Line light source device for printer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0829604B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008047511A (en) * | 2006-08-14 | 2008-02-28 | Samsung Sdi Co Ltd | Light-emitting device and display device |
-
1987
- 1987-04-22 JP JP9895787A patent/JPH0829604B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008047511A (en) * | 2006-08-14 | 2008-02-28 | Samsung Sdi Co Ltd | Light-emitting device and display device |
| US7800294B2 (en) | 2006-08-14 | 2010-09-21 | Samsung Sdi Co., Ltd. | Light emission device and display device using the light emission device as light source |
| JP4650840B2 (en) * | 2006-08-14 | 2011-03-16 | 三星エスディアイ株式会社 | Light emitting device and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0829604B2 (en) | 1996-03-27 |
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