JPS63262024A - Internal abnormality diagnosing device for sf6 gas sealed electric equipment - Google Patents
Internal abnormality diagnosing device for sf6 gas sealed electric equipmentInfo
- Publication number
- JPS63262024A JPS63262024A JP62093286A JP9328687A JPS63262024A JP S63262024 A JPS63262024 A JP S63262024A JP 62093286 A JP62093286 A JP 62093286A JP 9328687 A JP9328687 A JP 9328687A JP S63262024 A JPS63262024 A JP S63262024A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- internal abnormality
- abnormality diagnostic
- filled
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005856 abnormality Effects 0.000 title claims description 72
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 19
- 238000003745 diagnosis Methods 0.000 claims description 11
- 238000005057 refrigeration Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 52
- 238000001514 detection method Methods 0.000 description 17
- 238000000354 decomposition reaction Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、ＳＦ、ガス封入電気機器用内部異常診断素
子、特にＳＦ、ガス封入電気機器の内部異常の存在とＳ
Ｆ６分解ガスの生成とが対応することを利用して、ＳＦ
、ガス封入電気機器用の内部異常を検出する内部異常診
断素子に関するものである。Detailed Description of the Invention [Industrial Application Field] This invention is an internal abnormality diagnostic element for SF, gas-filled electrical equipment, and particularly for detecting the presence of an internal abnormality in SF, gas-filled electrical equipment, and
Taking advantage of the correspondence between the generation of F6 decomposition gas, SF
, relates to an internal abnormality diagnostic element for detecting internal abnormalities for gas-filled electrical equipment.
［従来の技術］
第７図は例えば特公昭５７−３８０９１号公報に示され
た、従来の異常診断素子を組み込んだＳ Ｆ ｓガス封
入電気機器用の内部異常診断装置を示す概略部分断面図
である。図において、Ｓ Ｆ ｍガス封入電気機器（図
示しない）の一部に密閉接地金属容器（１）が設けられ
、この密閉接地金属容器（１）の内部はＳＦ、ガス（２
）で充填されている。[Prior Art] FIG. 7 is a schematic partial cross-sectional view showing an internal abnormality diagnosis device for SF gas-filled electric equipment incorporating a conventional abnormality diagnosis element, as disclosed in Japanese Patent Publication No. 57-38091, for example. be. In the figure, a sealed grounded metal container (1) is provided as a part of the SF m gas-filled electrical equipment (not shown), and the inside of this sealed grounded metal container (1) is filled with SF, gas (2
) is filled with.
密け１接地金属容器（１）のほぼ中央に検出素子支持容
器（３）が設けられている。この検出素子支持容器〈３
）の内部上方には、例えば厚さ５μｍ程度の薄いアルミ
ニウム（Ａ１）金属板からなる内部異常検出素子（４）
が支持されている。また、検出素子支持容器（３）の底
部には、ＳＦ６ガス（２）の分解ガスと接触すると水分
を放出する例えばＣｕＳＯ４・５８２０等の結晶水含有
物質（６）が収容されている。検出素子支持容器（３）
の側面には、気体の通過可能な小孔である透孔（７）が
複数個設けられている。また、密閉接地金属容器（１）
の外部には、外部回路（図示しない）に接続された外部
導体（８）が設けられ、この外部導体（８）の両端は密
閉接地金属容器（１）の側壁部を貫通する絶縁密封端子
（９）および密閉接地金属容器（１）内部の内部導体（
５）を介して、内部異常検出素子（４）および内部導体
（５）と電気的に接続されている。A detection element support container (3) is provided approximately in the center of the hermetically grounded metal container (1). This detection element support container <3
), there is an internal abnormality detection element (4) made of a thin aluminum (A1) metal plate with a thickness of about 5 μm, for example.
is supported. Further, a crystal water-containing substance (6) such as CuSO4.5820, which releases moisture when it comes into contact with the decomposition gas of SF6 gas (2), is housed at the bottom of the detection element support container (3). Detection element support container (3)
A plurality of through holes (7), which are small holes through which gas can pass, are provided on the side surface of the housing. In addition, a closed grounded metal container (1)
An external conductor (8) connected to an external circuit (not shown) is provided on the outside of the enclosure, and both ends of the external conductor (8) are connected to insulated sealed terminals ( 9) and the internal conductor inside the hermetically grounded metal container (1) (
5), it is electrically connected to the internal abnormality detection element (4) and the internal conductor (5).
従来の内部異常検出装置は上述したように構成され、密
閉接地金属容器（１）内で放電等の異常が発生すると、
Ｓ Ｆ ｓガス（２）が分解し、ＳＦ４等の活性な低フ
ツ素化イオウ化合物ガスを生ずる。The conventional internal abnormality detection device is configured as described above, and when an abnormality such as electric discharge occurs in the sealed grounded metal container (1),
S F s gas (2) decomposes to produce active low fluorinated sulfur compound gases such as SF4.
これらの低フツ素化イオウ化合物ガスは、対流、拡散に
より検出素子支持容器（３）の側面の透孔（７）を通っ
てその内部に侵入し、検出素子支持容器（３）内のＳＦ
、ガス（２）中に微量に存在する水および結晶水含有物
質（６）から放出される水等と反応してＨＦに変化する
。ＳＦ、分解ガスと水分が共に存在する雰囲気となった
検出素子支持容器（３）内では、内部異常検出素子く４
）は次式の反応によりＡＩＦ、を生じる。These low-fluorinated sulfur compound gases enter the inside of the detection element support container (3) through the through hole (7) on the side surface by convection and diffusion, and enter the SF inside the detection element support container (3).
, reacts with a small amount of water present in the gas (2) and water released from the crystal water-containing substance (6), and changes into HF. Inside the detection element support container (3) where SF, decomposition gas and moisture exist together, the internal abnormality detection element 4
) produces AIF by the reaction of the following formula.
ＡＩ ＋ ３ＨＦ −ＡｌＦ３ ＋ ３／２Ｈ２
このようにして、導電性のＡ１金属板からなる内部異常
検出素子（４）の一部は非導電性のＡｌＦ３に変化する
のでその抵°抗値が変化し、この内部異常検出素子（４
）の抵抗値変化を外部導体（８）を介して外部回路で測
定することにより、電気機器の異常の発生の有無を検出
することができる。AI + 3HF -AlF3 + 3/2H2
In this way, a part of the internal abnormality detection element (4) made of the conductive A1 metal plate changes to non-conductive AlF3, so its resistance value changes, and this internal abnormality detection element (4) changes to non-conductive AlF3.
) By measuring the change in the resistance value of the electric device with an external circuit via the external conductor (8), it is possible to detect whether or not an abnormality has occurred in the electrical equipment.
［発明が解決しようとする問題点］
上述したような異常検出装置では、内部異常検出素子（
４）が金属板で作られているので、高濃度のＳＦ、分解
ガスでなければ反応が十分に進行せず、地絡事故等のよ
うにＳ Ｆ ｓ分解ガスが高濃度に存在する場合には検
出が可能であるが検出速度が遅く、また、部分放電や局
部加熱のように５ＦＩ１分解ガスが低濃度の場合には十
分に異常が検出できず、さらにＳＦ、分解ガスと接触す
ると水分を放出する物質例えば結晶水含有物質（６）等
を必要とするという問題点があった。[Problems to be solved by the invention] In the abnormality detection device as described above, the internal abnormality detection element (
4) is made of a metal plate, so the reaction will not proceed sufficiently unless there is a high concentration of SF or decomposed gas, and if there is a high concentration of SF decomposed gas such as in a ground fault, etc. Although detection is possible, the detection speed is slow, and abnormalities cannot be detected sufficiently when the 5FI1 decomposed gas is at a low concentration such as partial discharge or local heating. There is a problem in that a substance to be released, such as a crystal water-containing substance (6), is required.
この発明は、このような問題点を解決するためになされ
たもので、低濃度のＳＦ、分解ガスに対しても感度よく
ＳＦ６分解ガスを検出することができる内部異常診断素
子を得ることを目的とする。This invention was made to solve these problems, and the purpose is to obtain an internal abnormality diagnostic element that can detect SF6 decomposed gas with high sensitivity even in low concentrations of SF and decomposed gas. shall be.
［四組点を解決するための手段］
この発明に係る内部異常診断素子は、ＳＦ６分解ガスと
反応しない絶縁物からなる基板と、この基板上の一部に
設けられた一対の電極と、これら一対の電極を接続する
ように前記基板上に設けられ、Ｓ Ｆ ｓ分解ガスに接
して導電性を低下させるフッ化物を生成し得る金属薄膜
とからなるものである。[Means for solving the four set points] The internal abnormality diagnostic element according to the present invention includes a substrate made of an insulator that does not react with SF6 decomposition gas, a pair of electrodes provided on a part of the substrate, and a pair of electrodes provided on a part of the substrate. The metal thin film is provided on the substrate so as to connect a pair of electrodes, and is capable of producing fluoride that reduces conductivity when in contact with S F s decomposition gas.
［作 用］
この発明においては、Ｓ Ｆ ｓ分解ガスとの感応物質
である金属薄膜として銀（Ａｇ＞を用い、このＡｇを′
Ｆ！ｉ膜化することにより、微量のＳＦ、分解ガスとも
容易に反応して高い応答性−を示すので、Ｓ Ｆ ａガ
ス封入電気機器内の部分放電、局部加熱等の異常を早期
に発見できる。[Function] In this invention, silver (Ag>) is used as a metal thin film which is a sensitive substance with SFs decomposition gas, and this Ag is
F! By forming an i-film, it easily reacts with trace amounts of SF and decomposed gas and exhibits high responsiveness, so abnormalities such as partial discharge and local heating in SF gas-filled electrical equipment can be detected at an early stage.
［実施例］
第１Ａ図はこの発明の一実施例を示す平面図、第１Ｂ図
は第１Ａ図のＢ−Ｂｌｉに沿った断面図である。これら
の図において、内部異常診断素子（４Ａ）は、Ａｌ２Ｏ
：ｌヅ）″ｔ、結体等で作られた基板（１０）と、この
基板く１０）の表面両側部に設けられた電極例えば金（
Ａ ｕ ）電極（１１）と、これら基板（１０）および
Ａｕ電極（１１）の表面中央部分に設けられた金属薄膜
例えばＡｇ薄！（１２＞とから構成されている。[Embodiment] FIG. 1A is a plan view showing an embodiment of the present invention, and FIG. 1B is a sectional view taken along line B-Bli in FIG. 1A. In these figures, the internal abnormality diagnostic element (4A) is Al2O
：lㅅ)″t、A substrate (10) made of a solid, etc., and electrodes such as gold (10) provided on both sides of the surface of this substrate (10).
A u ) electrode (11), a metal thin film such as an Ag thin film provided at the center of the surface of the substrate (10) and the Au electrode (11). (12>).
内部異常診断素子（４Ａ）は、例えば第２図に示すよう
に、Ｓ Ｆ ｓガス封入電気機器（図示しない）内の一
部に設けられた密閉接地金属容器（１）内に設けられ、
内部導体（５）、絶縁密封端子（９）および外部導体（
８）を介して外部回路（図示しない）と電気的に接続さ
れている。For example, as shown in FIG. 2, the internal abnormality diagnosis element (4A) is provided in a sealed grounded metal container (1) provided in a part of an SF gas-filled electric device (not shown),
Inner conductor (5), insulated sealed terminal (9) and outer conductor (
8) is electrically connected to an external circuit (not shown).
上述したように構成された内部異常診断素子（４Ａ）に
おいては、内部異常診断素子（４Ａ）が設置されたＳ
Ｆ ｓガス封入電気機器の内部で放電等の異常が発生す
ると、ＳＦ、ガス（２）が分解してＳＦ４等の活性なＳ
Ｆ ｓ分解ガスが発生する。これらの分解ガスは、Ｓ
Ｆ、ガス（２）中に微量に存在する水と反応してＨＦを
生じる。生じたＨＦは自然対流および拡散によって移動
し、内部異常診断素子（４Ａ）の表面へ到達し、ここで
Ａｇ薄膜（１２）と次式に従って反応しＡｇＦを生じる
。In the internal abnormality diagnosis element (4A) configured as described above, the S in which the internal abnormality diagnosis element (4A) is installed is
When an abnormality such as electrical discharge occurs inside an electric device filled with Fs gas, SF gas (2) decomposes and generates active S such as SF4.
Fs decomposition gas is generated. These cracked gases are S
F reacts with a trace amount of water present in gas (2) to produce HF. The generated HF moves by natural convection and diffusion and reaches the surface of the internal abnormality diagnostic element (4A), where it reacts with the Ag thin film (12) according to the following formula to produce AgF.
Ａｇ ＋ ＨＦ −＋ ＡｇＦ ＋ １／ＺＨ
２このように、導電体で′あるＡｇ薄膜く１２）は不導
体であるＡｇＦ薄膜に変化するので抵抗値が変化し、こ
の抵抗値の変化を内部異常診断素子（４Ａ）用の外部導
体（８）を介して外部回路（図示しない）でモニターす
ることにより、ＳＦ６ガス封入電気機器内部の放電等の
異常を検出することができる。Ag + HF −+ AgF + 1/ZH
2 In this way, the Ag thin film 12), which is a conductor, changes to an AgF thin film which is a non-conductor, so the resistance value changes, and this change in resistance value is reflected in the external conductor (4A) for the internal abnormality diagnosis element (4A). 8) with an external circuit (not shown), it is possible to detect abnormalities such as discharge inside the SF6 gas-filled electrical equipment.
第３図は、第２図のように構成された内部異常診断素子
（４Ａ）を室温、大気圧下でＳＦ、ガス（濃度１％）に
暴露したときの抵抗値の経時変化を示す。この図におい
て、曲線Ａ、Ｂ、Ｃは基板（１１）上にそれぞれ１００
人、３００人、１０００人の膜厚のＡｇ薄膜（１２）を
例えばスパッタ法等により形成して作成した内部異常診
断素子（４Ａ）における測定結果を示し、曲線りは比較
例として厚さ５μｍのＡＩ板を用いた従来の内部異彎弊
杯専ヱ／Ａロ→快！キス・皿中話里を千す 雪μ芸１は
ＳＦ、ガスの導入時点である。この図から明らかなよう
に、この発明による内部異常診断素子（４Ａ）は、１０
０人ないし１０００人の膜厚のいずれにおいても、比較
例の内部異常診断素子（４）よりも短時間で大きな応答
を示した。従って、ＳＦ、分解ガス濃度の高い地絡事故
等では非常に高感度で内部異常の検出が可能である。FIG. 3 shows the change in resistance value over time when the internal abnormality diagnostic element (4A) configured as shown in FIG. 2 is exposed to SF and gas (concentration 1%) at room temperature and atmospheric pressure. In this figure, curves A, B, and C are each 100% on the substrate (11).
The measurement results are shown for internal abnormality diagnostic elements (4A) made by forming Ag thin films (12) with thicknesses of 300 and 1000 people, for example, by sputtering. Conventional internal abnormality cup special using AI board / Aro → Kai! Kiss Sarachuwa Sato wo Chisu Yuki μ Gei 1 is SF, at the time of the introduction of gas. As is clear from this figure, the internal abnormality diagnostic element (4A) according to the present invention has 10
At any film thickness from 0 to 1000 people, it showed a greater response in a shorter time than the internal abnormality diagnostic element (4) of the comparative example. Therefore, it is possible to detect internal abnormalities with extremely high sensitivity in cases such as ground faults where the concentration of SF or decomposed gas is high.
次に、内部異常診断素子（４Ａ）を加熱または冷却する
ために、温度調節素子例えば電子冷凍素子（１３）を内
部異常診断素子（４Ａ）に設けた密閉接地金属容器（１
）を示す部分断面図を第４図に示す。Next, in order to heat or cool the internal abnormality diagnosing element (4A), a temperature regulating element such as an electronic refrigeration element (13) is installed in the internal abnormality diagnosing element (4A).
) is shown in FIG. 4.
この図において、（１）、（２）、（４Ａ）、（８）、
（９）は第２図におけるものと同一である。内部異常診
断素子（４Ａ）は電子冷凍素子（１３）の一方の面の上
に設けられ、電子冷凍素子（１３）の他の面は密閉接地
金属容器（１）の内側壁面に接して設けられている。ま
た、この電子冷凍素子（１３）を加熱または冷却する電
源用導線（１４）が、電子冷凍素子（１３）に接続され
ている。電子冷凍素子（１３）には高温側の面と低温側
の面とがあり、この高温側の面に内部異常診断素子（４
Ａ）を配置して内部異常診断素子（４Ａ）を加熱するこ
とができる。内部異常診断素子（４Ａ）を加熱した場合
、Ａｇ薄膜（１２）の感度はさらによくなり、ＳＦ。In this figure, (1), (2), (4A), (8),
(9) is the same as in FIG. The internal abnormality diagnosis element (4A) is provided on one surface of the electronic refrigeration element (13), and the other surface of the electronic refrigeration element (13) is provided in contact with the inner wall surface of the hermetically grounded metal container (1). ing. Further, a power supply conductor (14) for heating or cooling the electronic refrigeration element (13) is connected to the electronic refrigeration element (13). The electronic refrigeration element (13) has a high temperature side surface and a low temperature side surface, and the internal abnormality diagnosis element (4
A) can be placed to heat the internal abnormality diagnostic element (4A). When the internal abnormality diagnostic element (4A) is heated, the sensitivity of the Ag thin film (12) becomes even better and SF.
ガス封入電気機器内部の部分放電、部分加熱等のＳＦ、
分解ガス濃度の低い内部異常についても容易に早期発見
できる。SF such as partial discharge and partial heating inside gas-filled electrical equipment,
Internal abnormalities with low concentrations of decomposed gas can also be easily detected at an early stage.
第５図は、第４図のように構成された内部異常診断素子
（４Ａ）を大気圧下でＳＦ４ガス（濃度１０１００ｐｐ
に暴露したときの抵抗値の経時変化を示す、この図にお
いて、曲線Ｅ、Ｆ、Ｇは基板（１１）上にそれぞれ１０
０人、３００人、１０００人の膜厚のＡｇＦＪ膜（１２
）を例えばスパッタ法等により設けて作成した内部異常
診断素子（４Ａ）の室温における測定結果を示し、曲線
Ｈは１０００人の膜厚のＡｇ薄膜（１２）を例えばスパ
ッタ法等により電子冷凍素子（１３）上に設け、この電
子冷凍素子（１３）を８０℃に加熱した場合の測定結果
を示す、記号↑はＳＦ、ガスの導入時点である。この図
から明らかなように、比較的膜厚の厚い１０００人のＡ
ｇ薄膜（１２）を用いた内部異常診断素子（４Ａ）では
感度があまり高くないが、この内部異常診断素子（４Ａ
）を加熱した場合には十分高い感度が得られ、非常に低
濃度のＳＦ、分解ガスをも検出できることがわかる。さ
らに、内部異常診断素子（４Ａ）を加温して測定する場
合には高感度となるため、１０００Å以上の膜厚を有す
るＡ ｇ Ｆｌ膜（１２）の使用も可能となる。FIG. 5 shows the internal abnormality diagnostic element (4A) configured as shown in FIG.
In this figure, curves E, F, and G indicate the change in resistance over time when exposed to
AgFJ membranes with thicknesses of 0, 300, and 1000 (12
) is shown at room temperature for an internal abnormality diagnostic element (4A) prepared by sputtering, etc. Curve H shows the measurement results at room temperature of an internal abnormality diagnostic element (4A) prepared by sputtering or the like. 13) and shows the measurement results when this electronic refrigeration element (13) was heated to 80°C. The symbol ↑ indicates the time of introduction of SF and gas. As is clear from this figure, 1000 people with relatively thick A
Although the sensitivity of the internal abnormality diagnostic element (4A) using g thin film (12) is not very high, this internal abnormality diagnostic element (4A)
), it can be seen that sufficiently high sensitivity is obtained and even very low concentrations of SF and decomposition gas can be detected. Furthermore, when measuring by heating the internal abnormality diagnostic element (4A), the sensitivity becomes high, so it is also possible to use an A g Fl film (12) having a film thickness of 1000 Å or more.
なお、上述した実施例では、金属薄膜の材料としてＡｇ
を用いたものを示したが、低抵抗の薄膜を形成すること
が可能で、かつＳ Ｆ ｍ分解ガスに接して導電性を低
下させるフッ化物を生成する金属であればいずれを用い
てもよい、また、上述した実施例では温度調節素子とし
て電子冷凍素子（１３）の高温側を用いた場合を示した
が、この電子冷凍素子（１３）の低温側を用い、内部異
常診断素子（４Ａ）を冷却してもよい、すなわち、内部
異常診断素子（４Ａ）を例えばＳＦ、ガス（２）の露点
以下に一旦冷却し、内部異常診断素子（４Ａ）の表面並
びにその近傍の水分およびＳ Ｆ ｍ分解ガスをａｍま
たは高密度あるいは高濃度とした後、再び内部異常診断
素子（４Ａ）を高温に加熱して水分を介在させ、上述し
たフッ化物の生成反応を促進させてもよい、この場合、
Ａｇｆｆｒ１４（１２）の表面並びにその近傍の水およ
び°ＳＦ、分解ガス濃度を高めることができるので、内
部異常診断素子（４Ａ）の感度を上げることができる。In addition, in the above-mentioned embodiment, Ag is used as the material of the metal thin film.
However, any metal may be used as long as it is capable of forming a thin film with low resistance and generates fluoride that reduces conductivity when in contact with S F m decomposition gas. In addition, in the above embodiment, the high temperature side of the electronic refrigeration element (13) is used as the temperature control element, but the internal abnormality diagnosis element (4A) is In other words, the internal abnormality diagnosing element (4A) may be cooled once to below the dew point of the SF gas (2), for example, to remove moisture and SF m on the surface of the internal abnormality diagnosing element (4A) and its vicinity. After the decomposition gas is made into am or high density or high concentration, the internal abnormality diagnostic element (4A) may be heated to a high temperature again to introduce moisture to promote the above-mentioned fluoride production reaction. In this case,
Since the concentration of water, °SF, and decomposed gas on the surface of the Agffr 14 (12) and its vicinity can be increased, the sensitivity of the internal abnormality diagnostic element (4A) can be increased.
なお、電子冷却素子（１３）の冷却および加熱は、この
電子冷却素子（１３）の電源極性を入れ換えることによ
って、高温側の面、低温側の面を切り替えてもよい。Note that cooling and heating of the electronic cooling element (13) may be switched between a high temperature side surface and a low temperature side surface by switching the power supply polarity of this electronic cooling element (13).
また、上述した実施例では、基板（１ｏ）としてＡ １
２０３焼結体を用いたが、Ｓ Ｆ ｍ分解ガスと反応し
ない絶縁物であり熱伝導性がよく、Ａｕ電極（１１）お
よびＡｇ薄ｆｉ（１２＞との付着強度の高いものであれ
ば、ＢＮ（窒化ホウ素）焼結体等信の材料を用いてもよ
い。In addition, in the embodiment described above, A 1 as the substrate (1o)
203 sintered body was used, but if it is an insulator that does not react with S F m decomposition gas, has good thermal conductivity, and has high adhesive strength with the Au electrode (11) and Ag thin fi (12), A material such as a BN (boron nitride) sintered body may be used.
さらに、第６図に示すように、密閉接地金属容器（１）
の内部に、内部異常診断素子（４Ａ）用の温度センサー
（１５）およびＳＦ、ガス（２）用の温度センサー（１
６）を設け、これらの温度センサー（１５）、 （１６
）からの出力をそれぞれ電源用導線（１７）、 （１８
）を介し温度制御回路（図示しない）に接続し、内部異
常診断素子（４Ａ）近傍の温度を一定に保ってもよく、
この場合、周囲温度の影響を受けずに安定して微量のＳ
Ｆ６分解ガスを検出することができる。Furthermore, as shown in Fig. 6, a sealed grounded metal container (1)
Inside, there is a temperature sensor (15) for the internal abnormality diagnosis element (4A) and a temperature sensor (15) for the SF and gas (2).
6), and these temperature sensors (15), (16
) to power supply conductors (17) and (18
) may be connected to a temperature control circuit (not shown) to maintain a constant temperature near the internal abnormality diagnostic element (4A).
In this case, a trace amount of S can be stably produced without being affected by the ambient temperature.
F6 decomposition gas can be detected.
［発明の効果］
この発明は、以上説明したとおり、ＳＦ、分解ガスと反
応しない絶縁物からなる基板と、この基板上の一部に設
けられた一対の電極と、これら一対の電極を接続するよ
うに前記基板上に設けられ、ＳＦ、分解ガスに接して導
電性を低下させるフッ化物を生成し得る金属薄膜とから
なるので、低濃度のＳＦ、分解ガスを感度よく検出する
ことができ、ＳＦ、ガス封入電気機器の内部異常を早期
に発見でき、ＳＦ、ガス封入電気機器を安定して運転す
ることができるという効果を奏する。[Effects of the Invention] As explained above, the present invention provides a substrate made of an insulator that does not react with SF or decomposition gas, a pair of electrodes provided on a part of this substrate, and a method for connecting these pair of electrodes. Since it is provided on the substrate and consists of a metal thin film that can generate fluoride that reduces conductivity when in contact with SF and decomposition gas, it is possible to detect low concentrations of SF and decomposition gas with high sensitivity. This has the effect that internal abnormalities in SF and gas-filled electrical equipment can be detected early, and SF and gas-filled electrical equipment can be stably operated.
第１Ａ図はこの発明の一実施例を示す平面図、第１Ｂ図
は第１Ａ図のＢ−Ｂ線に沿った断面図、第２図は第１図
に示した内部異常診断素子を内部に設けた密閉接地金属
容器を示す部分断面図、第３図は第２図に示した内部異
常診断素子における抵抗値の経時変化を示す線区、第４
図はこの発明の他の実施例により第１図に示した内部異
常診断素子を内部に設けた密閉接地金属容器を示す部分
断面図、第５図は第４図に示した内部異常診断素子にお
ける抵抗値の経時変化を示す線区、第６図は温度センサ
ーを内部に設けた、第４図と同様な密閉接地金属容器の
部分断面図、第７図は密閉接地金属容器内に設けられた
従来の内部異常診断素子を示す部分断面図である。
図において、（１）は密閉接地金属容器、（２）はＳＦ
６ガス、（４Ａ）は内部異常診断素子、くっ）は絶縁密
封端子、（１０）は基板、（１１）はＡｕ電極、（１２
）はＡｇ薄膜、（１３）は電子冷凍素子、（１５）、
（１６）は温度センサーである。
なお、各図中、同一符号は同一または相当部分第１Ａ図
第旧図
第２図
時間（時間）
第４図
＋３：電＋冷凍素子
第５図
時間（時間）
＋５．＋６：ｊ開度′巳）サー
手続補正書
昭和６２年 ）２４日FIG. 1A is a plan view showing an embodiment of the present invention, FIG. 1B is a sectional view taken along line B-B in FIG. 1A, and FIG. FIG. 3 is a partial cross-sectional view showing the installed hermetically grounded metal container, and FIG.
The figure is a partial sectional view showing a sealed grounded metal container in which the internal abnormality diagnosing element shown in FIG. 1 is installed according to another embodiment of the present invention, and FIG. Line section showing the change in resistance value over time. Figure 6 is a partial cross-sectional view of a sealed grounded metal container similar to Figure 4, with a temperature sensor installed inside it. Figure 7 is a diagram showing the temperature sensor installed inside the sealed grounded metal container. FIG. 2 is a partial cross-sectional view showing a conventional internal abnormality diagnostic element. In the figure, (1) is a closed grounded metal container, (2) is an SF
6 gas, (4A) is an internal abnormality diagnostic element, (ku) is an insulated sealed terminal, (10) is a substrate, (11) is an Au electrode, (12)
) is an Ag thin film, (13) is an electronic refrigeration element, (15),
(16) is a temperature sensor. In each figure, the same reference numerals refer to the same or corresponding parts.Figure 1A, old figure, figure 2, time (time), figure 4 +3: electric + refrigeration element, figure 5, time (hour) +5. +6:j Opening Degree'Mi) Sur Procedures Amendment 1986) 24th
Claims (13)
板と、この基板上の一部に設けられた一対の電極と、こ
れら一対の電極を接続するように前記基板上に設けられ
、ＳＦ＿６分解ガスに接して導電性を低下させるフッ化
物を生成し得る金属薄膜とからなることを特徴とするＳ
Ｆ＿６ガス封入電気機器用内部異常診断素子。(1) A substrate made of an insulator that does not react with the SF_6 decomposed gas, a pair of electrodes provided on a part of this substrate, and a pair of electrodes provided on the substrate so as to connect these pair of electrodes, and a metal thin film capable of producing fluoride that reduces conductivity when in contact with S.
F_6 Internal abnormality diagnostic element for gas-filled electrical equipment.
とする特許請求の範囲第１項記載のＳＦ＿６ガス封入電
気機器用内部異常診断素子。(2) An internal abnormality diagnostic element for an SF_6 gas-filled electric device as set forth in claim 1, wherein the substrate is made of an Al_2O_3 sintered body.
求の範囲第１項記載のＳＦ＿６ガス封入電気機器用内部
異常診断素子。(3) The internal abnormality diagnostic element for SF_6 gas-filled electrical equipment as set forth in claim 1, wherein the substrate is a BN sintered body.
する特許請求の範囲第１項記載のＳＦ＿６ガス封入電気
機器用内部異常診断素子。(4) The internal abnormality diagnostic element for an SF_6 gas-filled electric device according to claim 1, wherein the substrate is placed on a heating element.
許請求の範囲第４項記載のＳＦ＿６ガス封入電気機器用
内部異常診断素子。(5) The internal abnormality diagnostic element for SF_6 gas-filled electrical equipment as set forth in claim 4, wherein the heating element is a temperature control element.
する特許請求の範囲第１項記載のＳＦ＿６ガス封入電気
機器用内部異常診断素子。(6) The internal abnormality diagnostic element for an SF_6 gas-filled electrical device as set forth in claim 1, wherein the substrate is placed on a cooling body.
許請求の範囲第６項記載のＳＦ＿６ガス封入電気機器用
内部異常診断素子。(7) An internal abnormality diagnostic element for an SF_6 gas-filled electric device as set forth in claim 6, wherein the cooling body is a temperature control element.
置され、かつ前記温度調節素子の裏面を前記ＳＦ＿６ガ
ス封入電気機器の内側壁面に接していることを特徴とす
る特許請求の範囲第５項または第７項記載のＳＦ＿６ガ
ス封入電気機器用内部異常診断素子。(8) Claim 5, characterized in that the temperature adjustment element is disposed within the SF_6 gas-filled electrical equipment, and the back surface of the temperature adjustment element is in contact with the inner wall surface of the SF_6 gas-filled electrical equipment. Or an internal abnormality diagnostic element for SF_6 gas-filled electric equipment as described in item 7.
する特許請求の範囲第５項、第７項または第８項のいず
れか記載のＳＦ＿６ガス封入電気機器用内部異常診断素
子。(9) The internal abnormality diagnostic element for an SF_6 gas-filled electrical appliance as set forth in any one of claims 5, 7, or 8, wherein the temperature adjustment element is an electronic refrigeration element.
の範囲第１項記載のＳＦ＿６ガス封入電気機器用内部異
常診断素子。(10) An internal abnormality diagnostic element for an SF_6 gas-filled electric device as set forth in claim 1, wherein the electrode is a gold electrode.
請求の範囲第１項記載のＳＦ＿６ガス封入電気機器用内
部異常診断素子。(11) The internal abnormality diagnostic element for SF_6 gas-filled electric equipment as set forth in claim 1, wherein the metal thin film is a silver thin film.
特徴とする特許請求の範囲第１項または第１１項記載の
ＳＦ＿６ガス封入電気機器用内部異常診断素子。(12) An internal abnormality diagnostic element for an SF_6 gas-filled electric device as set forth in claim 1 or 11, wherein the metal thin film has a thickness of 1000 Å or less.
あることを特徴とする特許請求の範囲第１項、第１１項
または第１２項のいずれか記載のＳＦ＿６ガス封入電気
機器用内部異常診断素子。(13) Internal abnormality diagnosis for SF_6 gas-filled electrical equipment according to any one of claims 1, 11, or 12, characterized in that the metal thin film is formed by a sputtering method. element.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62093286A JPS63262024A (en) | 1987-04-17 | 1987-04-17 | Internal abnormality diagnosing device for sf6 gas sealed electric equipment |
| US07/149,168 US4839767A (en) | 1987-02-02 | 1988-01-27 | Element and device for detecting internal faults in an insulating gas charged electrical apparatus |
| CA000557745A CA1286361C (en) | 1987-02-02 | 1988-01-29 | Element and device for detecting internal faults in an insulating gas charged electrical apparatus |
| CN88100511.8A CN1009957B (en) | 1987-02-02 | 1988-02-01 | Device for detecting internal anomaly of electric apparatus inflated sulfur hexafluoride |
| EP88101413A EP0277623A3 (en) | 1987-02-02 | 1988-02-01 | Element and device for detecting internal faults in an insulating gas charged electrical apparatus |
| KR1019880000882A KR910000084B1 (en) | 1987-04-17 | 1988-02-01 | Element and device for detecting internal faults in an insulating gas charged electrical apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62093286A JPS63262024A (en) | 1987-04-17 | 1987-04-17 | Internal abnormality diagnosing device for sf6 gas sealed electric equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63262024A true JPS63262024A (en) | 1988-10-28 |
Family
ID=14078168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62093286A Pending JPS63262024A (en) | 1987-02-02 | 1987-04-17 | Internal abnormality diagnosing device for sf6 gas sealed electric equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63262024A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114184911A (en) * | 2021-11-23 | 2022-03-15 | 国网北京市电力公司 | Method and device for detecting defect type of equipment and electronic equipment |
-
1987
- 1987-04-17 JP JP62093286A patent/JPS63262024A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114184911A (en) * | 2021-11-23 | 2022-03-15 | 国网北京市电力公司 | Method and device for detecting defect type of equipment and electronic equipment |
| CN114184911B (en) * | 2021-11-23 | 2023-10-24 | 国网北京市电力公司 | Method and device for detecting defect type of equipment and electronic equipment |
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