JPS63249330A - Microwave plasma cvd system - Google Patents
Microwave plasma cvd systemInfo
- Publication number
- JPS63249330A JPS63249330A JP8415187A JP8415187A JPS63249330A JP S63249330 A JPS63249330 A JP S63249330A JP 8415187 A JP8415187 A JP 8415187A JP 8415187 A JP8415187 A JP 8415187A JP S63249330 A JPS63249330 A JP S63249330A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- microwaves
- jar
- substrate
- bell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000001035 gastrointestinal tract Anatomy 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、近年、ＩＣ基板や半導体レーザー用のヒー
トシンク材、不純物を添加する事による半導体化、また
切削刃具へのコーティングなど各種応用が研究されてい
る低圧気相合成法による人工ダイヤモンド膜の合成やＬ
Ｓｌ、メモリー素子などのデバイス製造において用いさ
れるマイクロ波プラズマＣＶＤ装置に関する。[Detailed Description of the Invention] [Industrial Application Field] In recent years, this invention has been researched into various applications such as heat sink materials for IC substrates and semiconductor lasers, semiconductors by adding impurities, and coatings for cutting tools. Synthesis of artificial diamond film by low pressure vapor phase synthesis method and L
The present invention relates to a microwave plasma CVD apparatus used in the manufacture of devices such as Sl and memory elements.
本装置は、被処理品の大型化への対応や生産性の向上を
目的として、上記構造により大型のプラズマを発生せし
め大面積の処理を可能としたマイクロ波プラズマＣＶＤ
装置の構造に関するものである。This device is a microwave plasma CVD device that uses the above structure to generate large plasma and enables processing of large areas, in order to cope with the increase in the size of the objects to be processed and to improve productivity.
It concerns the structure of the device.
従来、人工ダイヤモンド膜の合成に用いられているマイ
クロ波プラズマＣＶＤ装置の概略図を第２図に示す、マ
イクロ波を導く為のマイクロ波導波管２に貫通させた石
英反応管３の中に基板８を支持台９にのせて設置し、原
料ガス例えば炭化水素と水素の混合ガスを供給しながら
前記石英反応管２内を真空ポンプ４により排気を行い、
所定のガス圧力に設定後、２．４５ＧＨｚマイクロ波発
振器１よりマイクロ波を与えて基板の周囲に放電プラズ
マ１０を発生する方法がとられている。（特公昭５９〔
発明が解決しようとする問題点〕
しかし、従来の装置はその用いている２、４５ＧＨｚの
マイクロ波周波数から、半波長分すなわち約６１ｍ５の
直径のプラズマが限界であり４インチ（直径約１００鶴
）、５インチ（直径約１５００）などの基板の表面全体
に一度に合成あるいはエツチングを施すことは不可能で
あり、生産性の向上、基板の大型化に対応するなどの点
で問題があった。そこでこの発明は、従来のこのような
欠点を解決し大型のプラズマを発生させ大面積の処理を
可能とすることを目的としている。A schematic diagram of a microwave plasma CVD apparatus conventionally used for synthesizing artificial diamond films is shown in FIG. 2. A substrate is placed in a quartz reaction tube 3 penetrated by a microwave waveguide 2 for guiding microwaves. 8 is placed on a support stand 9, and the inside of the quartz reaction tube 2 is evacuated by the vacuum pump 4 while supplying a raw material gas, for example, a mixed gas of hydrocarbon and hydrogen.
After setting the gas pressure to a predetermined value, microwaves are applied from a 2.45 GHz microwave oscillator 1 to generate discharge plasma 10 around the substrate. (Tokuko Showa 59 [
[Problems to be Solved by the Invention] However, due to the microwave frequency of 2.45 GHz used in the conventional device, the limit is plasma with a diameter of half a wavelength, that is, approximately 61 m5, which is 4 inches (approximately 100 cranes in diameter). It is impossible to perform synthesis or etching on the entire surface of a 5-inch (about 1,500 mm in diameter) substrate at once, which poses problems in terms of improving productivity and responding to larger substrates. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve these conventional drawbacks and to generate large-sized plasma to enable processing of a large area.
上記問題点を解決する為にこの発明は、大型のマイクロ
波密閉容器内に被処理品である基板を収納する真空容器
を有する２重構造とし、かつ前記真空容器にマイクロ波
を効率良（照射する為のマイクロ波反射板を有する構造
とし、大型のプラズマを発生させ大面積の処理が出来る
ようにした。In order to solve the above-mentioned problems, the present invention has a double structure having a vacuum container for storing a substrate to be processed in a large microwave sealed container, and efficiently irradiates the vacuum container with microwaves. It has a structure with a microwave reflector to generate large plasma and can process large areas.
上記の様に構成された装置にマイクロ波を導（と、マイ
クロ波は密閉容器内に拡散される。この拡散したマイク
ロ波をマイクロ波反射板により真空容器へ集中させて照
射させることにより、真空容器内に大型のプラズマを発
生させることが出来るのである。When microwaves are introduced into the device configured as described above, the microwaves are diffused into the sealed container.By concentrating the diffused microwaves into the vacuum container using a microwave reflector and irradiating them, the vacuum It is possible to generate a large plasma inside the container.
本発明の構造によるマイクロ波プラズマＣＶＤ装置の実
施例を図１に示す０図１において密閉容器はマイクロ波
を外部に逃がさないよう、金属例えばステンレス製のチ
ャンバー５であり、その内部の真空容器はマイクロ波が
透過しやすい材質例えば石英ガラス製のペルジャー６で
ある。又、マイクロ波反射板７はマイクロ波を吸収しに
くい材質例えばアルミニウム、ステンレス等の板で、前
記チャンバー５の外部よりペルジャー６に向け、角度、
距離２回転等が、調整可能となっている。An embodiment of the microwave plasma CVD apparatus according to the structure of the present invention is shown in FIG. For example, Pelger 6 made of quartz glass is a material through which microwaves easily pass. The microwave reflecting plate 7 is made of a material that does not easily absorb microwaves, such as aluminum or stainless steel, and is directed from the outside of the chamber 5 toward the Pelger 6 at an angle.
Distance 2 rotations etc. can be adjusted.
マイクロ波発振器１．マイクロ波導波管２．真空ポンプ
４等は従来の装置と同様なものである。ペルジャー６内
を従来の方法と胃様に原料ガス例えば炭化水素と水素の
混合ガスを供給しながら真空ポンプ４により排気を行い
、所定のガス圧力に設定後、マイクロ波発振器ｌよりマ
イクロ波を与える。この時、マイクロ波反射板が設置さ
れていない場合でもペルジャー６内上部にプラズマは発
生する。しかしながら与えられたマイクロ波はチャンバ
ー５内に拡散してしまう為、従来の方法と同じ程度の直
径のプラズマしか得られない、そこでマイクロ波反射板
を設置し、拡散されたマイクロ波がペルジャー６に集中
するように角度２位置等の反射調整を行うと、ペルジャ
ー６内にマイクロ波の電界を制御する事が出来、従来よ
りも大型のプラズマ１０を発生させる事が可能となり大
面積の処理ができるのである。実施例においては人工ダ
イヤモンド膜の合成について記述したが、ＬＳＩ。Microwave oscillator 1. Microwave waveguide2. The vacuum pump 4 and the like are similar to conventional devices. The interior of the Pelger 6 is evacuated using a vacuum pump 4 while supplying a raw material gas, such as a mixed gas of hydrocarbon and hydrogen, to the gastrointestinal tract using a conventional method.After setting the gas pressure to a predetermined value, microwaves are applied from a microwave oscillator 1. . At this time, plasma is generated in the upper part of the Pelger 6 even if the microwave reflector is not installed. However, since the applied microwaves diffuse into the chamber 5, only a plasma with the same diameter as the conventional method can be obtained.Therefore, a microwave reflector is installed, and the diffused microwaves are directed into the Pelger 6. By adjusting the reflection at two angle positions so that the microwaves are concentrated, it is possible to control the electric field of the microwave inside the Pelger 6, making it possible to generate a larger plasma 10 than before, making it possible to treat a large area. It is. In the example, the synthesis of an artificial diamond film was described, but this is an LSI.
メモリー素子などのデバイス製造における合成、エツチ
ングにおいても同様の結果が得られることは勿論である
。Of course, similar results can be obtained in synthesis and etching in the manufacture of devices such as memory elements.
以上述べてきたように本発明により大型のプラズマの発
生が可能となり、生産性の向上、被処理品の大面積化に
対応する等が可能となるものである。As described above, the present invention makes it possible to generate large-sized plasma, thereby making it possible to improve productivity and cope with larger areas of objects to be processed.
第１図は本発明によるマイクロ波プラズマＣＶＤ装置の
概略図、第２図は人工ダイヤモンド合成における従来の
マイクロ波プラズマＣＶＤ装置の概略図である。
ｌ・・・マイクロ波発振器
２・・・マイクロ波導波管
３・・・反応石英管 ４・・・真空ポンプ５・・・チ
ャンバー ６・・・ペルジャー７・・・マイクロ波反
射板
８・・・基板 ９・・・支持台１０・・・プラ
ズマ
以上
出願人 セイコー電子工業株式会社
原料ブス
１．事件の表示
昭和６２年特許願第 ８４１５１号
２、発明の名称
マイクロ波プラズマＣｖＤ装置
３、補正をする者
４、代理人FIG. 1 is a schematic diagram of a microwave plasma CVD apparatus according to the present invention, and FIG. 2 is a schematic diagram of a conventional microwave plasma CVD apparatus for synthetic diamond synthesis. l...Microwave oscillator 2...Microwave waveguide 3...Reaction quartz tube 4...Vacuum pump 5...Chamber 6...Pelger 7...Microwave reflection plate 8... Substrate 9...Support stand 10...Plasma and above Applicant Seiko Electronics Co., Ltd. Raw material bus 1. Display of the case 1986 Patent Application No. 84151 2, Title of invention Microwave plasma CvD device 3, Person making amendment 4, Agent
Claims (1)
器内に合成あるいはエッチングを施す被処理品である基
板を収納する真空容器を有する２重構造から成り、前記
真空容器にマイクロ波を効率良く照射する為のマイクロ
波反射板を有することを特徴とするマイクロ波プラズマ
ＣＶＤ装置。It consists of a double structure including a sealed container that introduces and confines microwaves, and a vacuum container that stores a substrate, which is a processed product to be synthesized or etched, in the sealed container, and efficiently irradiates the vacuum container with microwaves. A microwave plasma CVD apparatus characterized by having a microwave reflecting plate for
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8415187A JPS63249330A (en) | 1987-04-06 | 1987-04-06 | Microwave plasma cvd system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8415187A JPS63249330A (en) | 1987-04-06 | 1987-04-06 | Microwave plasma cvd system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63249330A true JPS63249330A (en) | 1988-10-17 |
Family
ID=13822504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8415187A Pending JPS63249330A (en) | 1987-04-06 | 1987-04-06 | Microwave plasma cvd system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63249330A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012130825A (en) * | 2010-12-20 | 2012-07-12 | Kagawa Univ | Nano-particle manufacturing method, nano-particles, and nano-particle manufacturing apparatus |
-
1987
- 1987-04-06 JP JP8415187A patent/JPS63249330A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012130825A (en) * | 2010-12-20 | 2012-07-12 | Kagawa Univ | Nano-particle manufacturing method, nano-particles, and nano-particle manufacturing apparatus |
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