JPS63248822A - Epoxy resin composition for sealing semiconductor device - Google Patents
Epoxy resin composition for sealing semiconductor deviceInfo
- Publication number
- JPS63248822A JPS63248822A JP7961387A JP7961387A JPS63248822A JP S63248822 A JPS63248822 A JP S63248822A JP 7961387 A JP7961387 A JP 7961387A JP 7961387 A JP7961387 A JP 7961387A JP S63248822 A JPS63248822 A JP S63248822A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- vinyl
- epoxy
- silicone rubber
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 26
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 26
- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 title description 2
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 13
- 239000004945 silicone rubber Substances 0.000 claims abstract description 13
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 239000007822 coupling agent Substances 0.000 claims abstract description 6
- 239000011256 inorganic filler Substances 0.000 claims abstract description 4
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 4
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 238000005476 soldering Methods 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 abstract 1
- -1 methoxyethoxy Chemical group 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 9
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- 239000000945 filler Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 6
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- QEZIKGQWAWNWIR-UHFFFAOYSA-N antimony(3+) antimony(5+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Sb+3].[Sb+5] QEZIKGQWAWNWIR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- WXQUYYNHONXGSP-UHFFFAOYSA-N ethenyl-[2-[ethenyl(dimethyl)silyl]phenyl]-dimethylsilane Chemical compound C=C[Si](C)(C)C1=CC=CC=C1[Si](C)(C)C=C WXQUYYNHONXGSP-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- BUZRAOJSFRKWPD-UHFFFAOYSA-N isocyanatosilane Chemical compound [SiH3]N=C=O BUZRAOJSFRKWPD-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は半導体装置対Ｉヒ用エポキシ樹脂組成物に関し
、更に詳しくは半田付は後の耐湿性に優れた特徴をもつ
エポキシ樹脂組成物に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to an epoxy resin composition for use in semiconductor devices, and more specifically, an epoxy resin composition that has excellent moisture resistance after soldering. The present invention relates to an epoxy resin composition.
（従来の技術）
最近の電子機器の小形、軽量化の進展は著るしいものが
ある。それに伴い半導体部品の高集積化、素子ペレット
の大形化と共に薄形化が進んでいる。(Prior Art) Recent advances in the miniaturization and weight reduction of electronic devices have been remarkable. Along with this, semiconductor components are becoming more highly integrated, and element pellets are becoming larger and thinner.
しかも部品を取り付ける方法もソケットに差し込む方法
やリート部分のみ半田に浸漬して半田付けを行う方法か
ら、半導体部品全体を半田に浸漬する表面実装が盛んに
行なわれるようになっていきた。Moreover, the methods for attaching components have changed from inserting them into sockets or immersing only the lead portion in solder for soldering, to surface mounting in which the entire semiconductor component is immersed in solder.
このように半導体部品全体が半田に浸漬された場合、そ
の後の信頼性、特に耐湿性において著るしい劣化をもた
らし産業上重要な問題となっている。When the entire semiconductor component is immersed in solder in this manner, subsequent reliability, especially moisture resistance, is significantly deteriorated, which is an important problem in industry.
これは大気中の水分を吸湿した半導体装置封止樹脂が常
温からいきなり半田融溶温度（たとえば２６０℃）にさ
らされる熱衝撃によって、楕成材料の急激な膨張による
歪と水分の蒸気圧の上昇によって、チップおよびリード
の界面に隙間を生じる。This is due to thermal shock when the semiconductor device encapsulation resin that has absorbed moisture from the atmosphere is suddenly exposed to the solder melting temperature (for example, 260°C) from room temperature, causing strain due to rapid expansion of the ellipsoidal material and an increase in the vapor pressure of the moisture. This creates a gap at the interface between the chip and the leads.
あるいは樹脂内部に微細クランクが発生する。その結果
隙間やクラックに容易に水分が侵入するため、耐湿性が
著るしく低下する。ことに最近のチップの大形化に従来
のレベルでは対応できない場合が発生して産業−Ｌ大き
な問題となっている。尚、耐湿性評価については、電子
通信学会技術研究報告（０￥頼性）９２９〜１９８６．
−７の文献
※［高信頼性標準ロジックＳ Ｍ Ｄの開発と耐湿性評
価」
黒肥地 他に記載されている。Alternatively, fine cranks occur inside the resin. As a result, moisture easily enters gaps and cracks, resulting in a significant drop in moisture resistance. In particular, the recent increase in the size of chips has become a major problem in the industry, as there are cases where the conventional technology cannot cope with the increase in size. Regarding the evaluation of moisture resistance, please refer to the Institute of Electronics and Communication Engineers Technical Research Report (0 yen reliability) 929-1986.
Document 7* [Development of high-reliability standard logic SMD and evaluation of moisture resistance] Kurohichi et al.
（発明が解決しようとする問題点）
従来のエポキシ樹脂組成物は内部応力が大きく、接着性
もほとんどないため、半田浸漬による熱衝撃に対して樹
脂内のクラックやチップ、リードビン界面が容易に剥離
し耐湿信頼性の大幅な低下が発生している。(Problems to be solved by the invention) Conventional epoxy resin compositions have large internal stress and almost no adhesive properties, so cracks and chips within the resin and the lead bin interface easily peel off due to thermal shock caused by solder immersion. However, a significant decrease in moisture resistance reliability has occurred.
本発明の目的はこのような従来のエポキシ樹脂にみられ
る胃点を改良し、低応力でシリコンチップ、リードフレ
ームとの密着性が良好で、かつ高耐湿性のエポキシ樹脂
組成物を提供することにあり、又、信頼性の高い樹脂封
止型半導体装置登提供することにある。The purpose of the present invention is to improve the problems observed in conventional epoxy resins, and to provide an epoxy resin composition that has low stress, good adhesion to silicon chips and lead frames, and high moisture resistance. Another object of the present invention is to provide a highly reliable resin-encapsulated semiconductor device.
（問題点を解決するための手段）
本発明は半導体装置封市川エポキシ樹脂組成物中の充填
剤の表面処理を行うことを特徴とする方法である表面処
理の構成は。(Means for Solving the Problems) The present invention is a method characterized in that a filler in an Ichikawa epoxy resin composition for sealing a semiconductor device is subjected to surface treatment, and the structure of the surface treatment is as follows.
ａ）末端官能基の一つがビニル基であるカップリング剤
ｂ）末端又は内部に５ｉ−Ｈ結合を少くとも１個以上有
する１液、又は２液性のシリコーンゴムＣ）エポキシ基
を２個以上有する１３０℃以下で液状のエポキシ樹脂
以上を用いて表面処理した無機質充填剤を必須成分とし
たエポキシ樹脂組成物に関するものであって、更に本発
明の第２の発明は前記第１の発明に係るエポキシ樹脂組
成物の硬化物により封止されてなることを特徴とする樹
脂封止型半導体装置に関するものである、
本発明に関する第１の必須成分であるカップリング剤の
末端官能基の−っがビニル基を有する化合物としては次
のようなものを例示することができる。a) A coupling agent in which one of the terminal functional groups is a vinyl group; b) A one-component or two-component silicone rubber having at least one 5i-H bond at the terminal or internally; C) Two or more epoxy groups. The second invention of the present invention relates to an epoxy resin composition having as an essential component an inorganic filler surface-treated with an epoxy resin that is liquid at 130° C. or lower, and a second invention of the present invention relates to the first invention. This invention relates to a resin-sealed semiconductor device characterized in that it is sealed with a cured product of an epoxy resin composition. Examples of compounds having a vinyl group include the following.
すなわち、ビニルトリメトキシシラン、ビニルトリメト
キシシラン、ビニル−トリス（ベータ。namely, vinyltrimethoxysilane, vinyltrimethoxysilane, vinyl-tris(beta).
メトキシエトキシ）シラン、ガンマ−メタクリロキシプ
ロピルトリメトキシシラン、ビニル１−リアセトキシシ
ラン等で代表されるビニル基含有シランカップリング剤
およびビニルメチルシリルジイソシアネ−１−、ビニル
シリル１−リイソシアネートなどのシリルイソシアネー
ト系があげられれる。Vinyl group-containing silane coupling agents such as methoxyethoxy) silane, gamma-methacryloxypropyltrimethoxysilane, vinyl 1-lyacetoxysilane, and vinyl methylsilyl diisocyanate-1-, vinylsilyl 1-liisocyanate, Examples include silyl isocyanate.
これらのカップリング剤は単独でも２種以上の混合物し
とて用いても良い。These coupling agents may be used alone or as a mixture of two or more.
第２の必須性分としての５ｉ−Ｈ結合を有するシリコー
ンゴムを形成するＨ変性ポリシロキサンとしては、次の
ようなものがあげられる。テ１−ラメチルジシロギサン
、テトラメチルポリジシロキサンポリメチルハイドロシ
ロキサン、ポリメチルハイドロ−シロメチルキシロキサ
ンコポリマー、ポリメチルハイドロ−メチルシアノプロ
ピルシロキサンコポリマー、ポリメチルハイドロ−メチ
ルオクチルシロキサンコポリマー、ポリエチルハイドロ
シロキサン等をあげる。二とができる。シリコーンゴム
を形成するもう一方のビニル変性ボリシ１」キサンとし
ては、テＩ−ラメチルジビニルシロキサン、末端ビニル
−ポリジメチルジシロキサン、末端メチルフェニルビニ
ルーポリジメチルシロキザン末端ビニルーボリジメチル
ーポリジフェニルシロキサンコボリマー、ポリジメチル
ーポリメチルビニルシロキサンコボリマー、末端メチル
ジビールーボリジメチルシロキサン、末端ビニル〜ボリ
ジメチルーメチルビニルシロキサンコボリマー。Examples of the H-modified polysiloxane that forms the silicone rubber having a 5i-H bond as the second essential component include the following. Te1-ramethyldisiloxane, tetramethylpolydisiloxane polymethylhydrosiloxane, polymethylhydro-silomethylxyloxane copolymer, polymethylhydro-methylcyanopropylsiloxane copolymer, polymethylhydro-methyloctylsiloxane copolymer, polyethylhydro Give siloxane etc. I can do two things. The other vinyl-modified polysiloxane that forms the silicone rubber includes trimethyldivinylsiloxane, vinyl-terminated polydimethyldisiloxane, methylphenylvinyl-terminated polydimethylsiloxane, vinyl-terminated vinyl-polydimethyl-polydiphenyl Siloxane copolymer, polydimethyl-polymethylvinylsiloxane copolymer, terminal methyldivy-polydimethylsiloxane, terminal vinyl-polydimethyl-methylvinylsiloxane copolymer.
末端ビニル−ポリメチルフェネチルシロキサン。Vinyl-terminated polymethylphenethylsiloxane.
ビス（ビニルジメチルシリル）ベンゼン、環状ビニルメ
チルシロキサン等をあげることができる。Examples include bis(vinyldimethylsilyl)benzene and cyclic vinylmethylsiloxane.
ビニール基１に対する５ｉ−Ｈの当量比は１．５＝−５
であり、いずれも５ｉ−Ｈが多くなる必要がある。The equivalent ratio of 5i-H to vinyl group 1 is 1.5=-5
In both cases, it is necessary to increase the amount of 5i-H.
これは官能基が残った場合の電気特性の低下と５ｉ−１
１はエポキシ樹脂の硬化剤であるフェノールとの反応が
行なわれるためである。This is due to the decrease in electrical properties when functional groups remain and the 5i-1
1 is because a reaction with phenol, which is a curing agent for epoxy resin, takes place.
尚このビニル基と５ｉ−Ｈの反応はヒドロシリル化反応
として知られているものであるが、この反応に用いられ
る通常の触媒たとえばアルカリ触媒。This reaction between the vinyl group and 5i-H is known as a hydrosilylation reaction, and a common catalyst used for this reaction, such as an alkali catalyst.
塩化白金酸、オクチル酸錫等を用いる中でも塩化白金酸
が好ましい。Among chloroplatinic acid, tin octylate, and the like, chloroplatinic acid is preferred.
又一般に市販されている１液、又は２液タイプで常温硬
化、あるいは加熱硬化で付加重合反応をするものも上述
した成分を含んでおり、これを使用することもできる。Also, commercially available one-component or two-component types that undergo an addition polymerization reaction by curing at room temperature or by heating contain the above-mentioned components, and can also be used.
第３の必須成分としての３０℃以下で液状のエポキシ樹
脂としてはビスフェノールＡ型エポキシ樹脂、ビスフェ
ノールＦ型エポキシ樹脂、水源ビスフェノールＡ型エポ
キシ樹脂、脂肪族系エポキシ樹脂、グリシジルエステル
型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、グ
リシジルエーテル型エポキシ樹脂、ゴム変性やシリコー
ン変性エポキシ樹脂等があげられる。これらのエポキシ
樹脂は単独又は複数を用いてもさしつかえない０表面処
理は、各成分単独で順次行うこともできるし、また各成
分を混合して処理を行なっても良い。Epoxy resins that are liquid at 30°C or below as the third essential component include bisphenol A epoxy resin, bisphenol F epoxy resin, water source bisphenol A epoxy resin, aliphatic epoxy resin, glycidyl ester epoxy resin, and glycidyl amine. Examples include type epoxy resins, glycidyl ether type epoxy resins, rubber-modified and silicone-modified epoxy resins. These epoxy resins may be used singly or in combination.Surface treatment can be performed using each component individually or in a mixed manner.
これらによって表面処理される充填剤としては溶融石英
ガラス、石英ガラス、合成シリカ、シリカ、アルミナ、
水酸化アルミニウム、ジルコン。Fillers surface-treated with these materials include fused silica glass, quartz glass, synthetic silica, silica, alumina,
Aluminum hydroxide, zircon.
ケイ酸カルシウム、炭酸カルシウム、ジルコン。Calcium silicate, calcium carbonate, zircon.
石コウ、クレー、カオリン、タルク、マイカ、アスベス
ト、ガラス、炭化ケイ素、チッ化ケイン。Gypsum, clay, kaolin, talc, mica, asbestos, glass, silicon carbide, cane nitride.
二酸化アンチモン、カーボンなどが挙げられる。Examples include antimony dioxide and carbon.
なお、本発明の組成物は今までに記述した他に各種のエ
ポキシ樹脂、硬化剤、硬化促進剤、離型剤等が配合され
てもよく、又低応力化の為の各種改良剤を添加して用い
ても良い。In addition, the composition of the present invention may contain various epoxy resins, curing agents, curing accelerators, mold release agents, etc. in addition to those described above, and various modifiers for reducing stress may be added. It may also be used as
一般にエポキシ系樹脂のカップリング剤にはエポキシシ
ラン系、アミノシラン系が用いられビニルシランは樹脂
との反応が不十分で強度低下があるため使用されていな
い。Generally, epoxysilanes and aminosilanes are used as coupling agents for epoxy resins, and vinylsilanes are not used because they react insufficiently with resins and reduce strength.
しかしながら、本発明のように反応してシリコーンゴム
を形成する樹脂にはビニル基を活性化する塩化スズ系、
白金塩系の触媒が入っておりビニルシランへも影響を与
え、エポキシ系樹脂においてもカップリング効果が得ら
れる。However, the resin that reacts to form silicone rubber as in the present invention includes tin chloride-based resins that activate vinyl groups,
Contains a platinum salt catalyst, which also affects vinyl silane and provides a coupling effect with epoxy resins.
しかも充填材表面にうすいシリコーンゴム層を形成する
ため低応力効果もあられれる。但し、シリコーンゴムそ
のものの破断強さはエポキシに比べ弱いため、成形時に
ゲート残り１等が発生することがある。Moreover, since a thin silicone rubber layer is formed on the surface of the filler, a stress-lowering effect can also be achieved. However, since the breaking strength of silicone rubber itself is weaker than that of epoxy, gate residues 1, etc. may occur during molding.
その為にゴム化のまえに液状エポキシと混合ないしは充
填材表面で混合することによって破断強さを補うと同時
に成形性の向上を計ることができる。Therefore, by mixing it with liquid epoxy or mixing it on the surface of the filler before forming it into rubber, it is possible to supplement the breaking strength and at the same time improve moldability.
これら表面処理された充填材はエポキシ成形材料として
の他の成分（エポキシ樹脂、＃！化材、顔料その他添加
剤）と均一になるように撹拌混合される。この時、表面
処理剤は充填材以外の成分へも付着する。These surface-treated fillers are stirred and mixed uniformly with other components of the epoxy molding material (epoxy resin, #! coating material, pigments, and other additives). At this time, the surface treatment agent also adheres to components other than the filler.
モールド時に充填材表面に付着した部分はカップリング
効果とゴム化し、それ以外は溶融した樹脂中に分散した
形しなり、リードフレームやチップ界面ではそれらの酸
化膜や表面ＯＨとゴムの一部である一５ｉ−Ｈを介して
密着あるいは接着するものと推定されるこの２つの影響
によって半田浸漬による熱衝撃に対して界面の剥離を発
生しないため、その後の水分の侵入も特に増加しないた
め、耐湿信頼性の低下を防止することが可能となった。The part that adheres to the surface of the filler during molding becomes rubber due to the coupling effect, and the rest becomes dispersed in the molten resin, and at the lead frame and chip interface, the oxide film, surface OH, and part of the rubber form. Due to these two effects, which are presumed to cause close contact or adhesion through a certain 5i-H, the interface does not peel off due to thermal shock caused by solder immersion, and subsequent moisture intrusion does not particularly increase. This makes it possible to prevent a decrease in reliability.
（実施例） 以下半導体封止用成形材料での実施例で説明する。(Example) The following will explain examples using molding materials for semiconductor encapsulation.
実施例（１〜■）
溶融シリカ（東芝セラミックス製）７０部、三酸化アン
チモン２部、カーボン０．３部、ビニルシランＡ−１７
２（日本ユニカー（株））０．４部を添加ヘンシェルミ
キサーで撹拌、次にシリコーンゴムＹＥ−５８２２（東
芝シリコーン製）と液状エポキシＹＨ−３２５（東部化
成製）を１７１で混合したものを添加撹拌、引き続きエ
ポキシ樹脂（住友化学製ＥＳＣＮ−１９５ＸＬ） １５
部、硬化剤（昭和ユニオン製、フェノールノボララック
）８部、臭素化エポキシ２部、硬化促進剤ＴＰＰ０．２
部離型剤（カルナバワックス）０．４部を混合後、７０
℃〜１００℃の二軸ロールで混線後粉砕して成形材料と
した。Examples (1 to ■) 70 parts of fused silica (manufactured by Toshiba Ceramics), 2 parts of antimony trioxide, 0.3 parts of carbon, vinyl silane A-17
Added 0.4 part of 2 (Nippon Unicar Co., Ltd.) Stirred with a Henschel mixer, then added a mixture of silicone rubber YE-5822 (manufactured by Toshiba Silicone) and liquid epoxy YH-325 (manufactured by Tobu Kasei) at 171. Stirring, followed by epoxy resin (Sumitomo Chemical ESCN-195XL) 15
1 part, curing agent (manufactured by Showa Union, phenol novolak) 8 parts, brominated epoxy 2 parts, curing accelerator TPP 0.2
After mixing 0.4 parts of mold release agent (carnauba wax), 70 parts
The mixture was mixed with a twin-screw roll at a temperature of 100°C to 100°C and then crushed to obtain a molding material.
実施例（■〜■）
実施例Ｉ〜■において、シリコーンゴムＴＳＥ −３０
３３（東芝シリコーン製）のみ替え他は同時に試作。Examples (■ to ■) In Examples I to ■, silicone rubber TSE-30
33 (manufactured by Toshiba silicone) was replaced and the others were prototyped at the same time.
比較例１〜■
ビニルシランに替えエポキシシランＡ−１８７（日本ユ
ニカー製）を用いて他は同様である。Comparative Examples 1 to 2 The same procedure was repeated except that epoxy silane A-187 (manufactured by Nippon Unicar) was used instead of vinyl silane.
以上の組成で代えたところと主な特性を第１表にまとめ
て示した。Table 1 summarizes the changes made to the above compositions and the main properties.
１゜半導体素子 ・・・シリコーン基板」−にＡＱ配
線を蒸着によって施した評価用素子
２、フレーム ・・・４２合金製２４ビン３゜４２
７０イ接着性・・・０．４ｗｔ Ｘ ５ Ｘ ５に２ｄ
の接触面をもつようにモールドをしたサンプル
の接着性
左上・・・引張り荷重
右下・・・せん断荷重
４、レッドインク
テスト・・・素子のない１６ｐｉｎＤＩＰをモールドし
、後硬化の後、吸湿・・・２６０℃ｌＯ秒半田浸漬後、
レッドインクの水溶液
に入れ、１２１℃２ａｔ＋＊ ８ｈ後にり一ドビンに侵
入した距離（−ＩＩ）
５、耐湿性 ・・・１を２に固定、ボンディング後
モールド、後硬化、吸湿処理２６０℃
１０秒半田浸漬、１２１”Ｃ２ａｔ＋ａ ２００Ｈ後の
＾ａ配付の断線ｎ＝２０で実施。1゜Semiconductor element...Silicone substrate'' - Evaluation element 2 with AQ wiring applied by vapor deposition, frame...24 bottles made of 42 alloy 3゜42
70i Adhesiveness...0.4wt x 5 x 5 to 2d
Adhesion of a sample molded to have a contact surface of ...After soldering immersion at 260°C lO seconds,
Placed in an aqueous solution of red ink, heated to 121°C 2at+* 8 hours later, distance traveled into the dobbin (-II) 5. Moisture resistance: Fixed 1 to 2, molded after bonding, post-cured, moisture absorption treatment at 260°C for 10 seconds Solder immersion, 121"C2at+a After 200H ^a distribution disconnection n=20.
以ト詳述したように充填材の表面処理を従来のエポキシ
シランＡ−１８７に代えてビニルシランを用いると共に
シリコーンゴムと液状エポキシのブレンド層を作ること
によって次のような効果が明らかになった。As detailed above, the following effects were clarified by using vinyl silane instead of the conventional epoxy silane A-187 for surface treatment of the filler and by creating a blend layer of silicone rubber and liquid epoxy.
１、 ビニルシランを用いることでリードフレームとの
接着性が良くなる。1. Using vinyl silane improves adhesion to the lead frame.
２、 シリコーンゴムと液状エポキシをブレンドするこ
とで成形品の樹脂強さを高めることができる。2. By blending silicone rubber and liquid epoxy, the resin strength of molded products can be increased.
３、 半田浸漬後の耐湿イ４頼性を大幅に向」二できる
。3. Moisture resistance after solder immersion and reliability can be greatly improved.
以上のように利点があり、今後更に半導体装置の大形化
と表面実装が進展する中で高（１頼性を得る組成として
本技術の産業的意義は非常に大きい。There are advantages as described above, and as the size of semiconductor devices and surface mounting progress further in the future, the present technology has great industrial significance as a composition that can obtain high reliability.
代理人 弁理士 則 近 憲 佑 愉＋１Agent: Patent Attorney Noriyuki Chika Pleasure +1
Claims (1)
ング剤 ｂ）末端又は内部にＳｉ−Ｈ結合を少くとも１個以上有
する１液、又は２液性のシリコーンゴム ｃ）エポキシ基を２個以上有する３０℃以下で液状のエ
ポキシ樹脂以上を用いて表面処理した無機質充填剤を含
むことを特徴とする半導体装置封止用エポキシ樹脂組成
物。(1) a) A coupling agent in which one of the terminal functional groups is a vinyl group b) A one-component or two-component silicone rubber having at least one Si-H bond at the terminal or inside c) An epoxy group An epoxy resin composition for encapsulating a semiconductor device, comprising two or more inorganic fillers surface-treated with an epoxy resin that is liquid at 30° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7961387A JPS63248822A (en) | 1987-04-02 | 1987-04-02 | Epoxy resin composition for sealing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7961387A JPS63248822A (en) | 1987-04-02 | 1987-04-02 | Epoxy resin composition for sealing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63248822A true JPS63248822A (en) | 1988-10-17 |
Family
ID=13694896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7961387A Pending JPS63248822A (en) | 1987-04-02 | 1987-04-02 | Epoxy resin composition for sealing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63248822A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08283539A (en) * | 1995-04-13 | 1996-10-29 | Fujikura Ltd | Epoxy composition for electric power part |
| JP2009542007A (en) * | 2006-06-20 | 2009-11-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | New reworkable underfill for protection of ceramic MCM C4 |
| US20140154479A1 (en) * | 2012-11-30 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Resin composition for printed circuit board, insulating film, prepreg and printed circuit board |
| CN106146958A (en) * | 2016-07-05 | 2016-11-23 | 安徽三彩工贸有限责任公司 | A kind of additive of silica gel special on mouse pad |
-
1987
- 1987-04-02 JP JP7961387A patent/JPS63248822A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08283539A (en) * | 1995-04-13 | 1996-10-29 | Fujikura Ltd | Epoxy composition for electric power part |
| JP2009542007A (en) * | 2006-06-20 | 2009-11-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | New reworkable underfill for protection of ceramic MCM C4 |
| US8492199B2 (en) | 2006-06-20 | 2013-07-23 | International Business Machines Corporation | Reworkable underfills for ceramic MCM C4 protection |
| US20140154479A1 (en) * | 2012-11-30 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Resin composition for printed circuit board, insulating film, prepreg and printed circuit board |
| KR20140070117A (en) * | 2012-11-30 | 2014-06-10 | 삼성전기주식회사 | Resin composition for printed circuit board, insulating film, prepreg and printed circuit board |
| JP2014109029A (en) * | 2012-11-30 | 2014-06-12 | Samsung Electro-Mechanics Co Ltd | Resin composition for printed circuit board, insulating film, prepreg, and printed board |
| CN106146958A (en) * | 2016-07-05 | 2016-11-23 | 安徽三彩工贸有限责任公司 | A kind of additive of silica gel special on mouse pad |
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