JPS63244850A - Electric circuit member - Google Patents
Electric circuit memberInfo
- Publication number
- JPS63244850A JPS63244850A JP62079009A JP7900987A JPS63244850A JP S63244850 A JPS63244850 A JP S63244850A JP 62079009 A JP62079009 A JP 62079009A JP 7900987 A JP7900987 A JP 7900987A JP S63244850 A JPS63244850 A JP S63244850A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- electric circuit
- connection
- circuit component
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 115
- 239000011810 insulating material Substances 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005275 alloying Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000010407 anodic oxide Substances 0.000 claims description 2
- 238000007743 anodising Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 57
- 150000002739 metals Chemical class 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 47
- 239000011347 resin Substances 0.000 description 47
- 239000010931 gold Substances 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 239000007769 metal material Substances 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- -1 fluororesin Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004720 fertilization Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005990 polystyrene resin Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019918 CrB2 Inorganic materials 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83886—Involving a self-assembly process, e.g. self-agglomeration of a material dispersed in a fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Non-Insulated Conductors (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、電気回路部材に関する。[Detailed description of the invention] [Industrial application field] TECHNICAL FIELD The present invention relates to an electric circuit member.
［従来技術］
従来、電気回路部品同士を電気的に接続して構成される
電気回路部材に関する技術としては以下に述べる技術が
知られている。[Prior Art] Conventionally, the following techniques are known as techniques related to electric circuit members configured by electrically connecting electric circuit components.
■ワイヤポンディング方法。■Wire bonding method.
ｉ１３図及びｔｊＳｌ ４ 図はワイヤポンディング方
法によって接続され、封止された半導体装置の代表例を
示しており、以下、第１３図及び第１４図に基づきワイ
ヤポンディング方法を説明する。Figure i13 and Figure tjSl4 show typical examples of semiconductor devices connected and sealed by the wire bonding method, and the wire bonding method will be explained below based on FIGS. 13 and 14.
この方法は、Ａｇペースト３等を用いて半導体素子４を
素子搭載部２に固定支持し、次いで、半導体素子４の接
続部５と、リードフレームｌの所望の接続部６とを金等
の極細金属線７を用いて電気的に接続する方法である。In this method, the semiconductor element 4 is fixedly supported on the element mounting part 2 using Ag paste 3 or the like, and then the connection part 5 of the semiconductor element 4 and the desired connection part 6 of the lead frame l are connected with ultrafine material such as gold. This is a method of electrically connecting using metal wires 7.
なお、接続後は、トランスファーモールド法等の方法で
樹脂８を用いて半導体素子４とリードフレームｌを封止
し、その後、樹脂封止部分から外に伸びたリードフレー
ム１の不要部分を切断し。After the connection, the semiconductor element 4 and the lead frame l are sealed using a resin 8 using a method such as transfer molding, and then the unnecessary portion of the lead frame 1 extending outward from the resin-sealed part is cut off. .
所望の形に曲げ半導体装Ｆｔ１９を作る。A semiconductor device Ft19 is made by bending it into a desired shape.
■Ｔ Ａ Ｂ （Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏ
ｎｄｉｎｇ）法（例えば、特開昭５９−１３９６３６号
公報）第１５図はＴＡＢ法により接続され封止された半
導体装にの代表例を示す。■T A B (Tape Automated Bo
FIG. 15 shows a typical example of a semiconductor device connected and sealed by the TAB method.
この方法は、テープキャリア方式による自動ポンディン
グ方法である。すなわち、第１５図に基づいて説明する
と、キャリアフィルム基板１６と半導体素子４とを位置
決めした後、キャリアフィルム基板１６のインナーリー
ド部１７と半導体素子４の接続部５とを熱圧着すること
により接続する方法である。接続後は、樹脂２０乃至樹
脂２１で封＋ｈ Ｉ、半導体装着９とする。This method is an automatic bonding method using a tape carrier method. That is, to explain based on FIG. 15, after positioning the carrier film substrate 16 and the semiconductor element 4, the inner lead part 17 of the carrier film substrate 16 and the connecting part 5 of the semiconductor element 4 are connected by thermocompression bonding. This is the way to do it. After connection, sealing is performed with resin 20 or resin 21, and semiconductor mounting 9 is performed.
■ＣＣＢ （Ｃｏｎｔｒｏｌｌｅｄ Ｃｏ１１ａｐｓｅ
Ｂｏｎｄｉｎｇ ）法（例えば、特公昭４２−２０９
６号、特開昭６０−５７９４４号公報）
第１６図はＣＣＤ法によって接続され封止された半導体
装置の代表例を示す、この方法を第１６図に基づき説明
する。なお１本方法はフリップチップポンディング法と
も言われている。■CCB (Controlled Co11apse
Bonding) law (for example, Special Publication Act 1977
(No. 6, Japanese Unexamined Patent Publication No. 60-57944) FIG. 16 shows a typical example of a semiconductor device connected and sealed by the CCD method. This method will be explained based on FIG. 16. Note that this method is also called the flip chip bonding method.
半導体素子４の接続部５に予め半田バンプ３１を設け、
半田バンプ３１が設けられた半導体素子４を１回路基板
３２上に位置決めして搭載する。Solder bumps 31 are provided in advance on the connection portion 5 of the semiconductor element 4,
A semiconductor element 4 provided with solder bumps 31 is positioned and mounted on one circuit board 32.
その後、半田を加熱溶解す°ることにより回路基板３２
とに半導体素子４とを接続させ、フラックス洗浄後封止
して半導体装置９を作る。Thereafter, by heating and melting the solder, the circuit board 32 is
The semiconductor device 9 is connected to the semiconductor element 4 and sealed after cleaning with flux.
■第１７及びｆ５ｔａ図に示す方法
すなわち、第１の半導体素子４の接続部５以外の部分に
ポリイミド等よりなる絶縁膜７１を形成せしめ、接続部
５にはＡｕ等よりなる金属材７０を設け、次いで、金属
材７０及び絶縁膜７１の露出面７３．７２を平らにする
。一方、第２の半導体素子４°の接続部５°以外の部分
にポリイミド等よりなる絶縁１１！２７１’を形成せし
め、接続部５°にはＡｕ等よりなる金属材７０゛を設け
１次いで、金属材７０’及び絶縁膜７１’の露出面７３
’、７２’を平らにする。■The method shown in Fig. 17 and f5ta, that is, an insulating film 71 made of polyimide or the like is formed on the portion of the first semiconductor element 4 other than the connection portion 5, and a metal material 70 made of Au or the like is provided on the connection portion 5. Next, the exposed surfaces 73 and 72 of the metal material 70 and the insulating film 71 are flattened. On the other hand, an insulator 11!271' made of polyimide or the like is formed on a portion of the second semiconductor element 4° other than the connecting portion 5°, and a metal material 70′ made of Au or the like is provided on the connecting portion 5°. Exposed surface 73 of metal material 70' and insulating film 71'
Flatten ', 72'.
しかる後、第１８図に示すようにｔ５１の半導体素子４
と第２の半導体素子４°とを位置決めし、位置決め後、
熱圧着することにより第１の半導体素子４の接続部５と
第２の半導体素子４°の接ｂｃ部５゛を金属材７０．７
０’を介して接続する。After that, as shown in FIG. 18, the semiconductor element 4 at t51 is
and the second semiconductor element 4 degrees, and after positioning,
By thermocompression bonding, the contact bc portion 5' between the connection portion 5 of the first semiconductor element 4 and the second semiconductor element 4° is bonded to the metal material 70.7.
Connect via 0'.
■ｗｓ１９図に示す方法
すなわち、第１の回路基材７５と第２の回路基材７５′
の間に、絶縁物質７７中に導電粒子７９を分散させた異
方性導電ｇ１７８を介在させ、第１の回路基材７５と第
２の回路基材７５′を位置決めしたのち、加圧もしくは
、加圧・加熱し、第１の回路基材７５のｔａ続郡部７６
第２の回路基材７５°の接続部７６′を接続する方法で
ある。■The method shown in Fig. WS19, that is, the first circuit substrate 75 and the second circuit substrate 75'
After positioning the first circuit base material 75 and the second circuit base material 75' by interposing an anisotropic conductive material g178 in which conductive particles 79 are dispersed in an insulating material 77 between them, pressurization or Pressurize and heat the first circuit base material 75 to form a continuous portion 76.
This is a method of connecting the connecting portion 76' of the second circuit board at 75°.
■第２０図に示す方法
すなわち、第１の回路基材７５と第２の回路基材７５°
の間に、絶縁物質８１中に一定方向にＦｅ、Ｃｕ等の金
属線８２を配したエラスチックコネクター８３を介在さ
せ、第１の回路基材７５と第２の回路基材７５°を位置
決めしたのち、加圧し、第１の回路基材７５の接続部７
６と第２の回路基材７５゛の接続部７６′を接続する方
法である。■The method shown in FIG. 20, that is, the first circuit substrate 75 and the second circuit substrate 75°
After positioning the first circuit base material 75 and the second circuit base material 75° by interposing an elastic connector 83 in which metal wires 82 such as Fe, Cu, etc. are arranged in a certain direction in an insulating material 81, , and pressurize the connecting portion 7 of the first circuit board 75.
6 and the connecting portion 76' of the second circuit board 75'.
［発明が解決しようとする問題点］
ところで上記した従来のポンディング法には次のような
問題点がある。[Problems to be Solved by the Invention] The conventional bonding method described above has the following problems.
■ワイヤポンディング法
■半導体素子４の接続部５を半導体素子４の内部にくる
ように設計すると、極細金属線７は、その線径が極めて
小さいために、半導体素子４の外周縁部１０あるいはリ
ードフレーム１の素子搭載部２の外周縁部１１に接触し
易くなる。極細金属線７がこれら外周縁部１０乃至１１
に接触すると短絡する。さらに、極細金属線７の長さを
長くせざるを得ず、その長さを長くすると、トランスフ
ァーモールド成形時に極細金属線７が変形しやすくなる
。■ Wire bonding method ■ If the connection part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the ultrafine metal wire 7 has an extremely small wire diameter, It becomes easier to contact the outer peripheral edge 11 of the element mounting portion 2 of the lead frame 1. The ultra-fine metal wire 7 is attached to these outer peripheral edges 10 to 11.
It will short circuit if it comes into contact with. Furthermore, the length of the ultra-fine metal wire 7 has to be increased, and when the length is increased, the ultra-fine metal wire 7 becomes easily deformed during transfer molding.
従って、半導体素子４の接続部５は半導体素子４上の周
辺に配芒する必要が生じ、回路設計上の制限を受けざる
を得なくなる。Therefore, the connecting portions 5 of the semiconductor element 4 need to be arranged around the semiconductor element 4, which imposes limitations on circuit design.
■ワイヤポンディング法においては、隣接する極細金属
線７同士の接触等を避けるためには半導体素子４上の接
続部５のピッチ寸法（隣接する接続部の中心間の距離）
としである程度の間隔をとらざるを得ない。従って、半
導体素子４の大きさが決まれば必然的に接続部５の最大
数が決まる。■In the wire bonding method, in order to avoid contact between adjacent ultrafine metal wires 7, the pitch dimension of the connecting parts 5 on the semiconductor element 4 (distance between the centers of adjacent connecting parts)
We have no choice but to maintain a certain amount of distance between each other. Therefore, once the size of the semiconductor element 4 is determined, the maximum number of connection portions 5 is necessarily determined.
しかるに、ワイヤポンディング法では、このピッチ寸法
が通常０．２ｍｍ程度と大きいので、接続部５の数は少
なくせざるを得なくなる。However, in the wire bonding method, the pitch dimension is usually as large as about 0.2 mm, so the number of connecting portions 5 must be reduced.
Ｏ半導体素子４上の接続部５から測った極細金属線７の
高さｈは通常０．２〜０．４ｍｍであるが、０．２ｍｍ
以下にし薄型化することは比較的困難であるので薄型化
を図れない。The height h of the ultrafine metal wire 7 measured from the connection part 5 on the O semiconductor element 4 is usually 0.2 to 0.4 mm, but it is 0.2 mm.
Since it is relatively difficult to make the device thinner than below, the device cannot be made thinner.
■ワイヤボンディング作業に時間がかかる。特に接続点
数が多くなるとポンディング時間が長くなり生産効率が
悪くなる。■Wire bonding takes time. In particular, when the number of connection points increases, the bonding time increases and production efficiency deteriorates.
■何らかの要因でトランスファーモールド条件範囲を越
すと、極細金属線７が変形したり最悪の場合には切断し
たりする。- If the transfer molding condition range is exceeded for some reason, the ultrafine metal wire 7 may be deformed or, in the worst case, may be cut.
また半導体素子４上の接続部５に場いては、極細金属線
７と合金化されないＡ党が露出しているためＡＩｇ食が
生じ易くなり、信頼性の低下が生じる。Further, in the connection portion 5 on the semiconductor element 4, since the A layer which is not alloyed with the ultrafine metal wire 7 is exposed, AIg corrosion is likely to occur, resulting in a decrease in reliability.
■ＴＡＢ法
■半導体素子４の接続部５を半導体素子４の内側にくる
ように設計すると、キャリアフィルム基板１６のインナ
ーリード部１７の長さ文が長くなるため、インナーリー
ド部１７が変形し易くなりインナーリード部を所望の接
続部５に接続できなかったり、インナーリード部１７が
半導体素子４の接続部５以外の部分に接触したりする。■TAB method■ If the connecting part 5 of the semiconductor element 4 is designed to be inside the semiconductor element 4, the length of the inner lead part 17 of the carrier film substrate 16 becomes longer, so that the inner lead part 17 is easily deformed. Otherwise, the inner lead portion may not be able to be connected to the desired connection portion 5, or the inner lead portion 17 may come into contact with a portion of the semiconductor element 4 other than the connection portion 5.
これを避けるためには半導体素子４の接続部５を半導体
素子４上の周辺に持ってくる必要が生じ、設計上の制限
を受ける。In order to avoid this, it is necessary to bring the connecting portion 5 of the semiconductor element 4 to the periphery above the semiconductor element 4, which is subject to design limitations.
■ＴＡＢ法においても、半導体素子４上の接続部のピッ
チ寸法は０．０９〜０．１５ｍｍ程度とる必要があり、
従ってワイヤポンディング法の問題点■で述べたと同様
に、接続部数を増加させることはむずかしくなる。■Even in the TAB method, the pitch dimension of the connection parts on the semiconductor element 4 must be approximately 0.09 to 0.15 mm.
Therefore, similar to the problem (2) of the wire bonding method, it is difficult to increase the number of connections.
■キャリアフィルム基板１６のインナーリード部１７が
半導体素子４の接続部５以外の部分に接触しないように
させるため所望のインナーリード部１７の接続形状が要
求されコスト高となる。(2) In order to prevent the inner lead portions 17 of the carrier film substrate 16 from coming into contact with portions other than the connection portions 5 of the semiconductor element 4, a desired connection shape of the inner lead portions 17 is required, which increases costs.
■半導体素子４の接続部５とインナーリード部１７とを
接続するためには、半導体素子４の接続部５またはイン
ナーリード部１７の接続部に金バンプをつけなければな
らずコスト高になる。(2) In order to connect the connecting portion 5 of the semiconductor element 4 and the inner lead portion 17, gold bumps must be attached to the connecting portion 5 of the semiconductor element 4 or the connecting portion of the inner lead portion 17, which increases the cost.
■ＣＣＢ法
■半導体素子４の接続部５に一半田バンプ３１を形成さ
せなければならないためコスト高になる。(2) CCB method (1) Since one solder bump 31 must be formed on the connection portion 5 of the semiconductor element 4, the cost increases.
■バンプの半田量が多いと隣接する半田バンプとブリッ
ジ（隣接する半田バンプ同士が接触する現象）が生じ、
逆に少いと半導体素子４の接続部５と基板３２の接続部
３３が接続しなくなり電気的導通がとれなくなる。すな
わち、接続の信頼性が低くなる。さらに、半田量、接続
の半田形状が接続の信頼性に影響する（ろう接技術研究
会技術資料、Ｎｏ 、０１７− ’８４．ろう接技術研
究会発行）という問題がある。■If the amount of solder on a bump is large, bridges (a phenomenon in which adjacent solder bumps come into contact with each other) will occur between adjacent solder bumps.
On the other hand, if the amount is too small, the connecting portion 5 of the semiconductor element 4 and the connecting portion 33 of the substrate 32 will not be connected and electrical continuity will not be established. In other words, the reliability of the connection becomes low. Furthermore, there is a problem in that the amount of solder and the solder shape of the connection affect the reliability of the connection (Technical data of the Brazing Technology Research Group, No. 017-'84. Published by the Brazing Technology Research Group).
このように、半田バンプの量の多少が接続の信頼性に影
響するため半田バンプ３１の量のコントロールが必要と
されている。As described above, the amount of solder bumps 31 needs to be controlled because the amount of solder bumps affects the reliability of the connection.
■半田バンブ３１が半導体素子４の内側に存在すると接
続が良好に行なわれたか否かの目視検査がむずかしくな
る。(2) If the solder bumps 31 are present inside the semiconductor element 4, it becomes difficult to visually inspect whether or not the connection has been made well.
■半導体素子の放熱特性が悪い（参考資料：Ｅｌｅｃｔ
ｒｏｎｉｃ Ｐａｃｋａｇｉｎｇ Ｔｅｃｈｎｏｌｏｇ
ｙ １１１８？、１（Ｖｏｌ。■Poor heat dissipation characteristics of semiconductor elements (Reference material: Elect
ronic Packaging Technology
y 1118? , 1 (Vol.
３、 Ｎｏ、１） ＰＪ８〜７１ ＮＩＫＫＥＩ Ｍ
ＩＣＲＯＤＥＶＩＣＥＳ。3, No. 1) PJ8-71 NIKKEI M
ICRODEVICES.
１９８６．５月、 Ｐ、９７〜１０８）ため、放熱特性
を良好たらしめるための多大な工夫が必要とされる。(May 1986, P, 97-108), therefore, great efforts are required to improve the heat dissipation characteristics.
■第１７図及び第１８図に示す技術
■絶縁膜７１の露出面７２と金属材７０の露出面７３、
さらに絶縁膜７１’の露出面７２°と金属材７０′の露
出面７３′を平らにしなければならず、そのための工数
が増し、コスト高になる。■Technique shown in FIGS. 17 and 18■Exposed surface 72 of insulating film 71 and exposed surface 73 of metal material 70,
Furthermore, the exposed surface 72° of the insulating film 71' and the exposed surface 73' of the metal material 70' must be made flat, which increases the number of steps and costs.
■絶ｕｌｌ’２７１の露出面７２と金属材７０の露出面
７３あるいは絶縁膜７１’の露出面７２°と金属材７０
′の露出面７３′に凹凸があると金属材７０と金属材７
０°とが接続しなくなり、信頼性が低下する。■The exposed surface 72 of the absolutely 271 and the exposed surface 73 of the metal material 70 or the exposed surface 72° of the insulating film 71' and the metal material 70
If the exposed surface 73' of ' is uneven, the metal material 70 and the metal material 7
0° will no longer be connected, reducing reliability.
■第１９図に示す技術
■位置決め後に、接続部７６と接続部７６′とを加圧し
て接続する際に、圧力が一定にはかかりにくいため、接
続状！８にバラツキが生じ、その結果、接続部における
接触抵抗値のバラツキが大きくなる。そのため、接続の
信頼性が乏しくなる。■Technology shown in FIG. 19■ After positioning, when applying pressure to connect the connecting portions 76 and 76', it is difficult to apply constant pressure, so it is difficult to maintain the connection. 8, and as a result, the contact resistance values at the connection portions vary widely. Therefore, the reliability of the connection becomes poor.
また、多量の電流を流すと１発熱等の現象が生じるので
、多量の電流を流したい場合には不向きである。In addition, when a large amount of current is passed, phenomena such as heat generation occur, so it is not suitable when a large amount of current is desired to be passed.
■圧力が一定にかけられたとしても、異方性導電膜７８
の導電粒子７９の配列により抵抗値のバラツキが大きく
なる。そのため、接続の信頼性に乏しくなる。また、大
電流容量が要求される接続には不向きである。■Even if a constant pressure is applied, the anisotropic conductive film 78
Due to the arrangement of the conductive particles 79, variations in the resistance value become large. Therefore, the reliability of the connection becomes poor. Furthermore, it is not suitable for connections requiring large current capacity.
■隣接する接続部のピッチ（接続部に隣接する接続部中
心間の距離）を狭くすると隣接する接続部の間の抵抗値
が小さくなることから高密度な接続には不向きである。(2) If the pitch between adjacent connecting parts (the distance between the centers of adjacent connecting parts) is narrowed, the resistance value between adjacent connecting parts will decrease, which is not suitable for high-density connections.
■回路基材７５．７５’の接続部７６．７６’の出っ彊
りｉｈｌのバラツキにより抵抗値が変化するため、ｈ１
バラツキ量を正確に押さえることが必要である。■The protrusion of the connection part 76.76' of the circuit board 75.75' Since the resistance value changes due to the variation in ihl, h1
It is necessary to accurately control the amount of variation.
■さらに異方導電膜を、半導体素子と回路基材の接続、
また、第１の半導体素子と第２の半導体素子との接続に
使用した場合、上記０〜＠の欠点の他、半導体素子の接
続部にバンブを設けなければならなくなり、コスト高に
なるという欠点が生じる。■Additionally, anisotropic conductive films can be used to connect semiconductor elements and circuit substrates,
Furthermore, when used to connect the first semiconductor element and the second semiconductor element, in addition to the above-mentioned disadvantages 0 to @, a bump must be provided at the connection part of the semiconductor element, resulting in high cost. occurs.
■第２０図に示す技術 ■加圧が必要であり、加圧治具が必要となる。■Technology shown in Figure 20 ■Pressure is required, and a pressure jig is required.
■エラスチックコネクタ８３の金ｍ線８２と第１の回路
基材７５の接続部７６まだ、第２の回路基材７５°の接
続部７６°との接触抵抗は加圧力及び表面状態により変
化するため接続の信頼性は乏しい。■The contact resistance between the gold m-wire 82 of the elastic connector 83 and the connecting portion 76 of the first circuit substrate 75 changes depending on the pressing force and surface condition. Connection reliability is poor.
■エラスチックコネクタ８３の金属線８２は剛体である
ため、加圧力が大であるとエラスチックコネクタ８３、
第１の回路基材７５、第２の回路基材７５゛の表面が破
損する可能性が大きい、また、加圧力が小であると、接
続の信頼性が乏しくなる。■Since the metal wire 82 of the elastic connector 83 is a rigid body, if the pressing force is large, the elastic connector 83
There is a high possibility that the surfaces of the first circuit board 75 and the second circuit board 75' will be damaged, and if the pressing force is small, the reliability of the connection will be poor.
■さらに、回路基材７５ 、７５ ’の接続部７６．７
６’の出っ張り量ｈ２、またエラスチックコネクタ８３
の金属線８２の出っ張り量ｈ３とそのバラツキが抵抗値
変化及び破損に影響を及ぼすので、バラツキを少なくす
る工夫が必要とされる。■Furthermore, the connection portions 76.7 of the circuit substrates 75, 75'
6' protrusion h2, and elastic connector 83
Since the protrusion amount h3 of the metal wire 82 and its dispersion affect the change in resistance value and damage, it is necessary to take measures to reduce the dispersion.
■さらに、エラスチックコネクターを半導体素子と回路
基材のｔａ続、また、第１の半導体素子と第２の半導体
素子との接続に使用した場合、■〜＠と同様な欠点を生
ずる。(2) Furthermore, when an elastic connector is used to connect a semiconductor element and a circuit substrate, or to connect a first semiconductor element and a second semiconductor element, the same drawbacks as in (2) to (@) occur.
本発明は、以上のような問題点をことごとく解決し、高
密度で高信頼性でしかも、低コストの新電気回路部材を
提案するものであり、従来の接続方式をｆｆｉき変え得
ることはもちろん、高密度多点接続が得られ、熱等諸特
性を向上させ得るものである。The present invention solves all of the above-mentioned problems and proposes a new electrical circuit component that is high-density, highly reliable, and low-cost. , high-density multi-point connections can be obtained, and various properties such as heat can be improved.
（以下余白）
［問題点を解決するための手段］
本発明は、接続部を有する第１の電気回路部品と、接続
部を有する第２の電気回路部品とを、両電気回路部品を
電気的に接続するための電気的接続部材を両者の間に介
在させて、両電気回路部品の接続部において接続して構
成される電気回路部材において、
該電気的接続部材は、金属または合金よりなる複数の金
属部材を、該金属部材の一端を第１の電気部品側に露出
させて、一方、該金属部材の他端を該第２の電気回路部
品側に露出させて、金属又は合金からなる保持体に絶縁
物質を介して埋設されており、
第１の電気回路部品の接続部と第１の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第２の電気回路部品の接続部と第２の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材に要旨を
有する。(The following is a blank space) [Means for solving the problem] The present invention provides a first electrical circuit component having a connecting portion and a second electrical circuit component having a connecting portion, by electrically connecting both electrical circuit components. In an electric circuit member configured by interposing an electric connection member between the two and connecting the two electric circuit parts at the connection part, the electric connection member is made of a plurality of metals or alloys. A metal member made of a metal or an alloy, with one end of the metal member exposed to the first electric component side and the other end of the metal member exposed to the second electric circuit component side. embedded in the body via an insulating material, the connecting portion of the first electric circuit component and one end of the metal member exposed on the side of the first electric circuit component are connected by alloying; The subject matter is an electric circuit member characterized in that the connection portion of the electric circuit component and one end of the metal member exposed on the side of the second electric circuit component are connected by alloying.
本発明における電気回路部品としては１例えば、半導体
素子、樹脂回路基板、セラミック基板、金属基板等の回
路基板（以下単に回路基板ということがある）、リード
フレーム等があげられる。すなわち、第１の電気回路部
品としてこれらの中のいずれかの部品を用い、第２の電
気回路部品としてこれらの中のいずれかの部品を用いれ
ばよい。Examples of electric circuit components in the present invention include semiconductor elements, circuit boards such as resin circuit boards, ceramic boards, and metal boards (hereinafter sometimes simply referred to as circuit boards), lead frames, and the like. That is, any one of these components may be used as the first electrical circuit component, and any one of these components may be used as the second electrical circuit component.
電気回路部品として接続部を有する部品が本発明の対象
となる。接続部の数は問わないが、接続部の数が多けれ
ば多いほど本発明の効果が顕著となる。The object of the present invention is a component having a connection part as an electric circuit component. Although the number of connection parts does not matter, the greater the number of connection parts, the more remarkable the effects of the present invention will be.
また、接続部の存在位置も問わないが、電気回路部品の
内部に存在するほど本発明の効果が顕著となる。Further, although the location of the connection portion does not matter, the effect of the present invention becomes more pronounced as the connection portion is located inside the electric circuit component.
本発明に係る電気的接続部材は、金属部材が、金属又は
合金からなる保持体に絶縁物質を介して埋設されている
。In the electrical connection member according to the present invention, a metal member is embedded in a holder made of metal or an alloy with an insulating material interposed therebetween.
この金属部材の一端は第１の電気回路部品側に露出して
おり、他の一端は第２の電気回路部品側に露出している
。One end of this metal member is exposed to the first electric circuit component side, and the other end is exposed to the second electric circuit component side.
ここで、金属部材の材質としては、金が好ましいが、全
以外の任意の金属あるいは合金を使用することもできる
０例えば、Ｃｕ、Ａｌｌ、Ｓｎ。Here, as the material of the metal member, gold is preferable, but any metal or alloy other than gold may also be used. For example, Cu, All, Sn.
Ｐｂ−５ｎ等の金属あるいは合金があげられる。Examples include metals or alloys such as Pb-5n.
さらに、金属部材の断面は円形、四角形その他任意の形
状とすることができる。Furthermore, the cross section of the metal member can be circular, square, or any other shape.
また、金属部材の太さは特に限定されない、電気回路部
品の接続部のピッチを考慮して、例えば２０ｇｍφ以上
あるいは２０ＩＬｍφ以下にしてもよい。Further, the thickness of the metal member is not particularly limited, and may be set to, for example, 20 gmφ or more or 20 ILmφ or less, taking into consideration the pitch of the connecting portions of the electric circuit components.
なお、金属部材の露出部は保持体と同一面としてもよい
し、また、保持体の面から突出させてもよい、この突出
は片面のみでもよいし両面でもよい、さらに突出させた
場合はバンプ状にしてもよい。Note that the exposed portion of the metal member may be on the same surface as the holder, or may be made to protrude from the surface of the holder. This protrusion may be on only one side or on both sides, and if it is made to protrude, it may be bumped. It may be made into a shape.
また、金属部材の間隔は、電気回路部品の接続部同士の
間隔と同一間隔としてもよいし、それより狭い間隔とし
てもよい、狭い間隔とした場合には電気回路部品と電気
的接続部材との位置決めを要することなく、電気回路部
品と電気的接続部材とを接続することが可能となる。Furthermore, the spacing between the metal members may be the same as the spacing between the connecting parts of the electrical circuit components, or may be narrower than that, and when the spacing is narrower, the spacing between the electrical circuit components and the electrical connecting members may be the same. It becomes possible to connect the electrical circuit component and the electrical connection member without requiring positioning.
また、金属部材は保持体中に垂直に配する必要はなく、
第１の電気回路部品側から第２の電気回路部品側に向か
って斜行していてもよい。In addition, the metal member does not need to be arranged vertically in the holder;
It may run obliquely from the first electric circuit component side toward the second electric circuit component side.
さらに電気的接続部材は、１層あるいは２Ｍ以上の多層
からなるものでもよい。Furthermore, the electrical connection member may consist of one layer or multiple layers of 2M or more.
本発明において保持体は金属又は合金からなり、保持体
と金属部材との間には絶縁物質を介在せしめる。In the present invention, the holder is made of metal or an alloy, and an insulating material is interposed between the holder and the metal member.
保持体の金属又は合金としては、例えば、Ａｇ、Ｃｕ、
Ａｕ、Ａｉ、Ｂｅ、Ｃａ、Ｍｇ。Examples of the metal or alloy of the holder include Ag, Cu,
Au, Ai, Be, Ca, Mg.
Ｍｏ、Ｎｉ 、Ｓｉ 、Ｗ、Ｆｅ、Ｔｉ 、Ｉｎ。Mo, Ni, Si, W, Fe, Ti, In.
Ｓｎ、Ｚｎその他の金属あるいはこれらの合金があげら
れる。Examples include Sn, Zn and other metals, or alloys thereof.
保持体と金属部材との間に絶縁物質を介在せしめる方法
としては例えば、
保持体が陽極酸化処理が可能な金属又は合金からなる場
合（例えばＡｎ 、Ｔｉ）には、保持体の金属部材が埋
設される部分に穴をあけた後保持体に対し陽極酸化処理
を行ない穴をあけた部分の表面は陽極酸化皮膜（陽極酸
化皮膜は絶縁性物質である。）を形成せしめる方法、
保持体の金属部材が埋設される部分に穴をあけた後、保
持体に対し酸化処理、窒化処理、はう化処理、炭化処理
等の処理を行ない、穴の表面に酸化膜、窒化膜、はう化
膜、炭化物膜等を形成せしめる方法。For example, when the holder is made of a metal or alloy that can be anodized (for example, An, Ti), the metal member of the holder may be buried. A method in which the holding body is anodized after making a hole in the part where the hole is made, and an anodized film is formed on the surface of the holed part (the anodic oxide film is an insulating material), and the metal of the holding body is anodized. After drilling a hole in the part where the component is to be buried, the holder is subjected to oxidation treatment, nitridation treatment, fertilization treatment, carbonization treatment, etc. to form an oxide film, nitride film, or fertilization film on the surface of the hole. , a method of forming a carbide film, etc.
保持体の金属部材が埋設される部分に穴をあけた後、セ
ラミック等を溶射あるいは蒸着せしめて絶縁物質を形成
せしめる方法、
保持体の金属部材が埋設される部分に穴をあけ、その穴
に樹脂を塗布する方法、
保持体と金属部材間を酸化処理、窒化処理、はう他処理
、炭化処理等行なって分離させる方法（水力法の場合は
保持体と金属部材が同一金属もしくは合金となる。）（
なお、上記方法による絶縁物質の形成は、電気的接続部
材の全側面、第１′Ｔ！、気回路部品側の面、第２電気
回路部品側の面について行なってもよい、）
金属部材と保持体の間に、樹脂あるいは無機材料よりな
る介在物を配設する方法（例えば、金属部材と、金属部
材が埋設される穴との間に管状体をはめ込む方法）、
等があげられる。A method in which a hole is made in the part of the holding body where the metal member is buried, and then a ceramic material is thermally sprayed or vapor deposited to form an insulating material. A method of applying resin, a method of separating the holder and the metal member by performing oxidation treatment, nitriding treatment, other treatment, carbonization treatment, etc. (In the case of hydraulic method, the holder and the metal member are made of the same metal or alloy) .)(
Note that the insulating material is formed by the above method on all sides of the electrical connection member, and on the 1'T! , the surface on the electrical circuit component side, and the surface on the second electrical circuit component side. and a hole in which a metal member is to be buried).
また、上記した方法のうち、樹脂よりなる介在物を配設
する場合における樹脂の種類には特に限定されない０例
えば絶縁性の樹脂を用いればよい、さらに、樹脂を用い
る場合には樹脂の種類も問わない、熱硬化性樹脂、紫外
線硬化樹脂、熱可塑性樹脂のいずれでもよい０例えば、
ポリイミド樹脂、ポリフェニレンサルファイド樹脂、ポ
リエーテルサルフオン樹脂、ポリエーテルイミド樹脂、
ポリスチレン樹脂、シリコーン樹脂、フッ素樹脂、ポリ
カーボネート樹脂、ポリジフェニールエーテル樹脂、ポ
リベンジルイミダゾール樹脂、フェノール樹脂、尿素樹
脂、メラミン樹脂、アルキッド樹脂、エポキシ樹脂、ポ
リアミドイミド樹脂、ポリプロプレン樹脂、ポリ塩化ビ
ニル樹脂、ポリスチレン樹脂その他の樹脂を使用するこ
とができる。Furthermore, among the methods described above, when disposing inclusions made of resin, the type of resin is not particularly limited; for example, insulating resin may be used; furthermore, when using resin, the type of resin may also be Any thermosetting resin, ultraviolet curing resin, or thermoplastic resin may be used.For example,
Polyimide resin, polyphenylene sulfide resin, polyether sulfone resin, polyetherimide resin,
Polystyrene resin, silicone resin, fluororesin, polycarbonate resin, polydiphenyl ether resin, polybenzylimidazole resin, phenol resin, urea resin, melamine resin, alkyd resin, epoxy resin, polyamideimide resin, polypropylene resin, polyvinyl chloride resin, Polystyrene resin and other resins can be used.
また、これら樹脂の中に金属材料乃至無機材料からなる
粉体乃至繊維を分散せしめてもよい０分散せしめる場合
、粉体乃至ｉａｇｉの形状、大きさ。Powder or fiber made of a metal material or an inorganic material may be dispersed in these resins. In the case of dispersion, the shape and size of the powder or iagi may be adjusted.
分散位置は特に問わない、ただ、金属部材と保持体とが
導通しない範囲に限られる。さらに、これら樹脂の中に
金属材料乃至無機材料からなる板状体、棒状体、球状体
等を埋め込んでもよい、この場合においても板状体、棒
状体、球状体等の埋め込み位置、形状、大きさ、数量等
は特に限定されない。The dispersion position is not particularly limited, but is limited to a range where the metal member and the holder are not electrically connected. Furthermore, plate-shaped bodies, rod-shaped bodies, spherical bodies, etc. made of metal or inorganic materials may be embedded in these resins. In this case, the embedding position, shape, and size of the plate-shaped bodies, rod-shaped bodies, and spherical bodies, etc. The quantity, etc. are not particularly limited.
また、上記した方法のうち、金属部材と保持体との間に
無機材料よりなる介在物を配設する場合における無機材
料としては１例えば、 Ｓ １０２ ＊Ｂ２０３
、Ａｌｔ Ｏ３、Ｎａ２０．に２０゜ＣａＯ，ＺｎＯ
，ＢａＯ，ＰｂＯ，Ｓｂ２０３ 。Further, among the above methods, when an inclusion made of an inorganic material is disposed between the metal member and the holding body, the inorganic material is 1, for example, S 102 *B203
, AltO3, Na20. 20°CaO, ZnO
, BaO, PbO, Sb203.
Ａｓ２０３ 、Ｌａｚ ０３ 、Ｚｒ０ｚ 、Ｂ
ａｄ。As203, Laz 03, Zr0z, B
ad.
Ｐ２０５ 、ＴｉＯ２、ＭｇＯ，ＳｉＣ，ＢｅＯ。P205, TiO2, MgO, SiC, BeO.
ＢＹ、ＢＮ、ＡｆＬＮ、Ｈａ Ｃ，ＴａＣ。BY, BN, AfLN, HaC, TaC.
ＴｉＢ２ 、ＣｒＢ２ 、ＴｉＮ、Ｓｉ３ Ｎ４
。TiB2, CrB2, TiN, Si3 N4
.
Ｔａ２０５等のセラミック、ダイヤモンド、ガラス、カ
ーボン、ポロンその他の無機材料があげられる。Examples include ceramics such as Ta205, diamond, glass, carbon, poron, and other inorganic materials.
なお、上記の樹脂あるいは無機材料の中から。In addition, from among the above resins or inorganic materials.
熱伝導性のよい樹脂を使用すれば、半導体素子が熱を持
ってもその熱を樹脂あるいは無機材料を介して放熱する
ことができるのでより好ましい本発明ではさらに、第１
の電気回路部品の接続部と第１の電気回路部品側に露出
した電気接続部材の金属部材の一端とを合金化すること
により接続し、かつ、第２の電気回路部品の接続部と第
２の電気回路部品側に露出した電気接続部材の金属部材
の一端とを合金化することにより接続する。If a resin with good thermal conductivity is used, even if the semiconductor element has heat, the heat can be dissipated through the resin or inorganic material.
The connecting portion of the electric circuit component and one end of the metal member of the electric connecting member exposed on the first electric circuit component side are connected by alloying, and the connecting portion of the second electric circuit component and the second end of the electric connecting member are connected by alloying. The connection is made by alloying one end of the metal member of the electrical connection member exposed on the side of the electrical circuit component.
すなわち、本発明では、第１の電気回路部品と第２の電
気回路部品との両方ともに合金化する。That is, in the present invention, both the first electric circuit component and the second electric circuit component are alloyed.
なお、合金化方法としては、例えば、それぞれ対応する
接続部を接触させた後、適宜の温度において加熱すれば
よい、加熱により、接続部において原子の拡散等が起こ
り、接続部表面に固溶体あるいは金属間化合物よりなる
層が形成され、接続部間士が合金化される。なお、電気
的接続部材の金属部材にＡｕを使用し、電気回路部品の
接続部にＡＭを使用した場合には、２００〜３５０℃の
加熱温度が好ましい。In addition, as an alloying method, for example, the corresponding connection parts may be brought into contact with each other and then heated at an appropriate temperature.Heating causes diffusion of atoms in the connection parts, and a solid solution or metal is formed on the surface of the connection parts. A layer of intermediate compound is formed to alloy the connections. In addition, when Au is used for the metal member of the electrical connection member and AM is used for the connection part of the electric circuit component, the heating temperature is preferably 200 to 350°C.
［作用］
本発明では、上記した電気的接続部材を使用して第１の
電気回路部品と第２の電気回路部品とを接続しているの
で、電気回路部品の接続部を内部に配置することも可鋤
となり、接続部の数を増加させることができ、ひいては
高密度化が可能となる。[Operation] In the present invention, since the above-described electrical connection member is used to connect the first electrical circuit component and the second electrical circuit component, the connecting portion of the electrical circuit component can be placed inside. This also makes it possible to increase the number of connections, which in turn makes it possible to achieve higher density.
また、電気的接続部材は８くすることが可能であり、こ
の面からも電気回路部材の薄型化が可使となる。In addition, the number of electrical connection members can be reduced to eight, and from this point of view as well, the electrical circuit member can be made thinner.
さらに、電気的接続部材に使用する金属部材の量は少な
いため、たとえ、高価な金を金属部材として使用したと
してもコストが安いものとなる。Furthermore, since the amount of metal members used for the electrical connection member is small, the cost is low even if expensive gold is used as the metal member.
本発明においては、電気的接続部材の保持体が金属又は
合金からなるので、第１の電気回路部品から第２の１［
気回路部品への熱伝導性、また、第２の電気回路部品か
ら第１の電気回路部品への熱伝導性が良くなる。つまり
、電気的接続部材の熱伝導性が良好であり、仮に、第１
の電気回路部品として発熱量の大きな電気回路部品を使
用し、第２の電気回路部品として熱影響の少ない電気回
路部品を選択したとすると、第１の電気回路部品から発
熱した熱は、電気的接続部材を介して第２の電気回路部
品へといち早く伝導され、この熱は第２の電気回路部品
から放熱される。従って、放熱特性の良好な電気回路部
材を得ることが回部となる。In the present invention, since the holder of the electrical connection member is made of metal or an alloy, it is possible to move from the first electrical circuit component to the second electrical circuit component.
Thermal conductivity to the air circuit components and from the second electric circuit component to the first electric circuit component are improved. In other words, the thermal conductivity of the electrical connection member is good, and if the first
If we use an electrical circuit component that generates a large amount of heat as the second electrical circuit component, and select an electrical circuit component that is less affected by heat as the second electrical circuit component, the heat generated from the first electrical circuit component will be The heat is quickly conducted to the second electric circuit component via the connecting member, and this heat is radiated from the second electric circuit component. Therefore, it is important to obtain an electric circuit member with good heat dissipation characteristics.
さらに、保持体が金属又は合金からなるので、電気回路
部品から外界に出る電磁気ノイズを減少せしめることが
でき、また外界から電気回路部品に入るノイズを減少せ
しめることができる。Furthermore, since the holder is made of metal or an alloy, it is possible to reduce electromagnetic noise emitted from the electric circuit components to the outside world, and it is also possible to reduce noise that enters the electric circuit components from the outside world.
本発明では、電気回路部品の両方が、電気接続部材を介
して合金化されており電気回路部品同士が強固（強度的
に強く）かつ確実に接続されるので、ａ械的に強く、不
良率の極めて低い電気回路部材を得ることができる。In the present invention, both of the electrical circuit components are alloyed through the electrical connection member, and the electrical circuit components are firmly (strong in terms of strength) and reliably connected to each other, so that the electrical circuit components are mechanically strong and have a high defect rate. It is possible to obtain an electric circuit member with extremely low
また、電気回路部品の両方を、電気的接続部材を介して
合金化するので、電気回路部材の作成工程中及び作成後
において、治具等を使用して電気回路部品を保持する必
要がなく、電気回路部材の作成及び作成後の管理が容易
である。Furthermore, since both of the electrical circuit components are alloyed via the electrical connection member, there is no need to use a jig or the like to hold the electrical circuit components during and after the production process of the electrical circuit component. It is easy to create electric circuit members and to manage them after they are created.
電気回路部品の両方が、電気的接続部材を介して合金化
されているので、電気回路部品相互の接触抵抗が一方の
みを合金化した場合に比べてより小さくなる。Since both of the electrical circuit components are alloyed via the electrical connection member, the contact resistance between the electrical circuit components is smaller than when only one of the electrical circuit components is alloyed.
（以下余白）
［実施例］
（第１実施例）
本発明の第１実施例を第１図及び第２図に基づいて説明
する。(Margins below) [Example] (First Example) A first example of the present invention will be described based on FIGS. 1 and 2.
本実施例では、接続部１０２を有する第１の電気回路部
品である回路基板１０１と、接続部１０５を有する第２
の電気回路部品である回路基板１０４とを１両回路基板
１０１，１０４を電気的にｖｃ統するための電気回路部
材１２５を両者の間に介在させて、角回路基板１０１，
１０４の接続部１０２，１０５において接続して構成さ
れる電気回路部材において、
該電気的接続部材１２５は、金属又は合金よりなる複数
の金属部材１０７を、それぞれの金属部材１０７同士を
電気的に絶縁し、かつ、該金属部材１０７の一端を第１
の回路基板１０１４に露出させて、一方、該金属部材１
０７の他端を該第２の回路部基板１０４側に露出させて
、金属又は合金からなる保持体１２２に絶縁物質１４０
を介して埋設されおり。In this embodiment, a circuit board 101, which is a first electric circuit component having a connection part 102, and a second circuit board 101 having a connection part 105 are used.
The square circuit board 101 and the circuit board 104, which are the electrical circuit components of the square circuit board 101 and
In the electrical circuit member configured by connecting at the connecting portions 102 and 105 of 104, the electrical connecting member 125 electrically insulates the plurality of metal members 107 made of metal or alloy from each other. and one end of the metal member 107 is connected to the first
while the metal member 1 is exposed on the circuit board 1014 of
07 is exposed to the second circuit board 104 side, and an insulating material 140 is attached to the holder 122 made of metal or alloy.
It is buried through.
第１の回路基板１０１の接続部１０２と第１の回路基板
１０１側に露出した金属部材１０７の一端とを合金化す
ることにより接続し、かつ、第２の回路基板１０４の接
続部１０５と第２の回路基板１０４・側に露出した金属
部材１０７の一端とを合金化することにより接続しであ
る。The connection portion 102 of the first circuit board 101 and one end of the metal member 107 exposed on the first circuit board 101 side are connected by alloying, and the connection portion 105 of the second circuit board 104 and the end of the metal member 107 exposed on the first circuit board 101 side are connected by alloying. The connection is made by alloying one end of the metal member 107 exposed on the second circuit board 104 side.
以下に本実施例をより詳細に説明する。This example will be explained in more detail below.
まず、電気的接続部材１２５の一製造例を説明しつつ電
気的接続部材１２５を説明する。First, the electrical connection member 125 will be explained while explaining one manufacturing example of the electrical connection member 125.
第２図に一製造例を示す。FIG. 2 shows one manufacturing example.
アルミニウムよりなる保持体１２２に、２０Ｊｊ、ｍφ
よりも大きい内径の穴１４２を４０ｇｍピッチであける
０次に、アルマイト処理（陽極酸化処理）を施し、アル
マイト処理後、保持体１２２の穴１４２に、２０ルｍφ
の金等の金属あるいは合金よりなる金属線１２１を通し
、アルミニウムよりなる保持体！２２と金属線１２１と
の間に樹脂１２３を入れ、樹脂１２３を硬化させる。硬
化した樹脂１２３とアルマイト処理により形成されたア
ルマイト皮膜（図示せず）は絶縁物質となる。その後、
金属線１２１を点線１２４の位置でスライス切断し、電
気的接続部材１２５を作製する。The holding body 122 made of aluminum has a diameter of 20Jj, mφ.
Holes 142 with an inner diameter larger than 20 mm are drilled at a pitch of 40 gm. After the alumite treatment, holes 142 of the holding body 122 are formed with a diameter of 20 gm.
A metal wire 121 made of metal such as gold or an alloy is passed through the holder made of aluminum! A resin 123 is placed between the wire 22 and the metal wire 121, and the resin 123 is cured. The cured resin 123 and an alumite film (not shown) formed by alumite treatment become an insulating material. after that,
The metal wire 121 is sliced at the dotted line 124 to produce an electrical connection member 125.
このようにして作成された電気重接ｂｃ部材１２５を第
２図（ｂ）、（Ｃ）に示す。The electrical contact bc member 125 created in this way is shown in FIGS. 2(b) and 2(c).
なお、本例では、保持体１２２をアルマイト処理した後
に、金属線１２１を通し、樹脂１２３を硬化したが、樹
脂１２３を硬化した後、アルマイト処理を施してもよい
、また、金属線１２１に樹脂１２３を均一に塗付し、保
持体１２２の穴１４２に通してもよい。In this example, the metal wire 121 is passed through the holder 122 after alumite treatment and the resin 123 is hardened. However, the alumite treatment may be performed after the resin 123 is hardened. 123 may be applied uniformly and passed through the hole 142 of the holder 122.
さらに、金、［１＆１２１の切断はアルマイト処理の前
でも後の工程でもよい。Furthermore, the cutting of gold and [1 & 121 may be performed in a process before or after the alumite treatment.
また、本例では樹脂１２３を金属線１２１とアルミニウ
ム１２２間に入れたが、樹脂１２３でなくとも電気的絶
縁材料ならばいかなるものでもよい、さらに、樹脂１２
３を用いずに、金属線１２１はアルミニウム１２２のア
ルマイト皮膜と直接接していてもよい、この場合にはア
ルマイト処理は金属線１２１を通す前に行なう。Further, in this example, the resin 123 is inserted between the metal wire 121 and the aluminum 122, but any electrically insulating material may be used instead of the resin 123.
3, the metal wire 121 may be in direct contact with the alumite film of the aluminum 122. In this case, the alumite treatment is performed before the metal wire 121 is passed through.
また、切断後に金属線１２１のダレをなくすために研磨
を行なってもよい、さらに、研磨によらず他の方法でダ
レをなくしてもよい。In addition, polishing may be performed to eliminate sagging of the metal wire 121 after cutting.Furthermore, sag may be eliminated by other methods other than polishing.
本例ではアルマイト処理を行なった例を示したが、樹脂
１２３が単独でも絶縁物質となるのでアルマイト処理を
行なわすともよい。Although this example shows an example in which alumite treatment was performed, since the resin 123 alone serves as an insulating material, alumite treatment may also be performed.
このように作成された電気的接続部材１２５において、
金属ｍ１２１が金属部材１０７を構成し、樹脂１２３と
アルマイト皮膜が絶縁物質１４０を構成し、保持体１２
２と絶縁物質１４０、金属部材１０７とが電気的接合部
材１２５を構成する。In the electrical connection member 125 created in this way,
The metal m121 constitutes the metal member 107, the resin 123 and the alumite film constitute the insulating material 140, and the holder 12
2, the insulating material 140, and the metal member 107 constitute an electrical connection member 125.
この電気的接続部材１２５においては金属部材となる金
Ｂ線１２１同士は樹脂１２３により電気的に絶縁されて
いる。また、金属線１２１の一端は回路基板１０１側に
露出し、他端は回路基板１０４側に露出している。この
露出している部分はそれぞれ回路基板１０１，１０４と
の接続部１０８．１０９となる。In this electrical connection member 125, the gold B wires 121, which are metal members, are electrically insulated from each other by the resin 123. Further, one end of the metal wire 121 is exposed to the circuit board 101 side, and the other end is exposed to the circuit board 104 side. These exposed portions become connection portions 108 and 109 to the circuit boards 101 and 104, respectively.
次に、第１の回路基板１０１、電気的接続部材１２５、
第２の回路基板１０４を用意する０本例で使用する回路
基板１０１．１０４は、第１図に示すように、その内部
に多数の接続部１０２゜１０５を宥している。Next, the first circuit board 101, the electrical connection member 125,
Preparing the second circuit board 104 The circuit boards 101 and 104 used in this example have a large number of connection parts 102 and 105 therein, as shown in FIG.
なお、第１の回路基板１０１の接続部１０２は、第２の
回路基板１０４の接続ｇ＆１０５及び電気的接続部材１
２５の接続部１０８，１０９に対応する位置に金属が露
出している。Note that the connection portion 102 of the first circuit board 101 is connected to the connection g & 105 of the second circuit board 104 and the electrical connection member 1.
Metal is exposed at positions corresponding to the connecting portions 108 and 109 of 25.
第１の回路基板１０１の接続部１０２と、電気的接続部
材１２５の接続部１０８とを、又は、第２の回路基板１
０４の接続部１０５と電気的接続部材１２５の接続部１
０９が対応するように位置決めを行ない、位置決め後、
接続を行なう。Connecting portion 102 of first circuit board 101 and connecting portion 108 of electrical connecting member 125, or
Connection part 1 between the connection part 105 of 04 and the electrical connection member 125
Perform positioning so that 09 corresponds, and after positioning,
Make the connection.
以上のようにして作成した電気回路部材につき接続状態
を調べたところ、高い信頼性をもって接続されていた。When the connection state of the electric circuit member produced as described above was examined, it was found that the connection was highly reliable.
（第２実施例） 第３図に第２実施例を示す。(Second example) FIG. 3 shows a second embodiment.
本例は、接続部５２を有するｆｆ５ｌの電気回路部品と
して回路基板５１を、第２の電気回路部品として内部に
多数の接続部５を有する半導体素子４を使用した。In this example, a circuit board 51 is used as an ff5l electric circuit component having a connection portion 52, and a semiconductor element 4 having a large number of connection portions 5 therein is used as a second electric circuit component.
なお、電気的接続部材１２５としては半導体素子４に対
応する寸法のものを使用した。Note that as the electrical connection member 125, one having dimensions corresponding to the semiconductor element 4 was used.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第３実施例） 第４図に第３実施例を示す。(Third example) FIG. 4 shows a third embodiment.
本例は、第１の電気回路部品が半導体素子４であり、第
２の電気回路部品が回路基板５１である例である。In this example, the first electric circuit component is the semiconductor element 4, and the second electric circuit component is the circuit board 51.
なお、接続後は回路基板５１の上面にリードフレーム１
を接続し、封止材６３により封止した。Note that after connection, the lead frame 1 is placed on the top surface of the circuit board 51.
were connected and sealed with a sealing material 63.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第４実施例） 第５図に第４実施例を示す。(Fourth example) FIG. 5 shows a fourth embodiment.
本例は、第１の電気回路部品が半導体素子４′であり、
第２の電気回路部品が半導体素子４である例であり、本
例では、電気的接続部材として半導体素子４に対応した
寸法のものを使用し、リードフレームｌを電気的接続部
材１２５の第１の半導体素子４゛側に露出した金属部材
に接続している。In this example, the first electric circuit component is a semiconductor element 4',
This is an example in which the second electric circuit component is the semiconductor element 4. In this example, an electrical connection member with dimensions corresponding to the semiconductor element 4 is used, and the lead frame l is connected to the first electrical connection member 125. It is connected to the metal member exposed on the semiconductor element 4' side.
他は第３実施例と同様である。The rest is the same as the third embodiment.
本例においても接続部は晶い信頼性を持って接続され工
いた。In this example as well, the connections were made with high reliability.
（第５実施例） 第６図に第５実施例を示す。(Fifth example) FIG. 6 shows a fifth embodiment.
第５実施例は、第１の電気回路部品、第２の電気回路部
品として、接続部以外の部分が絶縁膜１０３．１０６で
覆われている回路基板１０１゜１０４を使用している例
である。The fifth embodiment is an example in which circuit boards 101 and 104 whose portions other than the connecting portions are covered with insulating films 103 and 106 are used as the first electric circuit component and the second electric circuit component. .
また、電気的接続部材としては第７図に示すものを使用
した。すなわち、第７図に示すように金属又は合金から
なる保持体１２２に、絶縁物質である樹脂１２３を介し
て金属部材１０７が埋設されている電気的接続部材１２
５は、金属部材１０７の露出している部分が保持体１２
２の面から突出している。このような電気的接続部材１
２５の作成は、例えば１次の方法によればよい。Further, as an electrical connection member, one shown in FIG. 7 was used. That is, as shown in FIG. 7, there is an electrical connection member 12 in which a metal member 107 is embedded in a holder 122 made of metal or an alloy through a resin 123 which is an insulating material.
5, the exposed part of the metal member 107 is attached to the holder 12
It sticks out from two sides. Such an electrical connection member 1
25 may be created by, for example, a first-order method.
まず、第１実施例で述べた方法ように、アルミニウムよ
りなる保持体１２２の穴に金属線１２１を通した後、保
持体１２２の面よりｌｏＩＬｍ以上厚く、樹脂を塗付し
た後、樹脂を硬化させる。その後、保持体１２２の面か
ら１１０７Ｌ程度突出した位置で切断を行なう０次いで
、塗付した樹脂をエツチングにより除去すれば保持体１
２２の面より１０ｐｍ金属線１２１が突出した電気的接
続部材１２５が得られる。First, as in the method described in the first embodiment, after passing the metal wire 121 through the hole of the holding body 122 made of aluminum, applying resin to a thickness of loILm or more thicker than the surface of the holding body 122, and then hardening the resin. let After that, cutting is performed at a position protruding approximately 1107L from the surface of the holder 122.Next, if the applied resin is removed by etching, the holder 122 is cut.
An electrical connection member 125 in which the metal wire 121 protrudes by 10 pm from the surface of 22 is obtained.
なお、木実流側では金ｆ！線１２１の突出量を１０ｐｍ
としたが、いかなる量でもよい。In addition, on the Kimi-ryu side, gold f! The amount of protrusion of wire 121 is 10pm
However, any amount may be used.
また、金属線１２１を突出させる方法としてはエツチン
グに限らず、他の化学的な方法又は機械的な方法を使用
してもよい。Furthermore, the method for making the metal wire 121 protrude is not limited to etching, and other chemical or mechanical methods may be used.
他の点は第１実施例と同様である。Other points are similar to the first embodiment.
なお、突出部を、電気的接続部材１２５を金属線１２１
の位置に凹部を持った型に挟み込み、金属［１２１の突
起１２６をつぶすことにより第８図に示すようなバンプ
１５０を形成してもよい。Note that the protruding portion and the electrical connection member 125 are connected to the metal wire 121.
A bump 150 as shown in FIG. 8 may be formed by inserting it into a mold having a recess at the position and crushing the protrusion 126 of the metal [121].
この場合金属線１２１は保持体１２０から脱落しにくく
なる。In this case, the metal wire 121 becomes difficult to fall off from the holder 120.
なお、本例でも、金属線１２１が金属部材１０７を構成
し、さらに、アルミニウムよりなる保持体１２０を構成
し、アルマイト皮膜（図示せず）と樹脂１２３が絶縁性
物質１４０を構成する。In this example as well, the metal wire 121 constitutes the metal member 107, further constitutes the holder 120 made of aluminum, and the alumite film (not shown) and the resin 123 constitute the insulating substance 140.
なお、バンプを作成するのには突起を熱で溶融させ、バ
ンプを作成してもよいし、他のいかなる方法でもよい。Note that the bumps may be created by melting the protrusions with heat, or any other method may be used.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（ｔｊｓ６実施例） 第９図に第６実施例を示す。(tjs6 example) FIG. 9 shows a sixth embodiment.
本例は、ｔＪＳｉの電気回路部品として半導体素子４を
使用し、第２の電気部品としてリードフレーム１を使用
した例である。In this example, a semiconductor element 4 is used as an electric circuit component of tJSi, and a lead frame 1 is used as a second electric component.
他の点は第５実施例と同様である。Other points are similar to the fifth embodiment.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第７実施例） 第１０図に第７実施例を示す。(Seventh Example) FIG. 10 shows a seventh embodiment.
本例においては、電気的接続部材１２５は、第５￥施例
に示した電気的接続部材と異なる。すなわち、本例の電
気的接続部材１２５においては。In this example, the electrical connection member 125 is different from the electrical connection member shown in the fifth embodiment. That is, in the electrical connection member 125 of this example.
全屈部材同士のピッチが第５実施例で示したものよりも
狭くなっている。すなわち、本例では、第１の回路基板
接続部の間隔よりも狭い１３３１隔に金属部材１０７同
士のピッチを設定しである。The pitch between the fully bent members is narrower than that shown in the fifth embodiment. That is, in this example, the pitch between the metal members 107 is set to 1331 intervals, which is narrower than the interval between the first circuit board connection parts.
つまり、第５実施例では、第１の回路基板１０１と第２
の回路基板１０４との接続位置に電気的接続部材１２５
の接続位置を配設したため。That is, in the fifth embodiment, the first circuit board 101 and the second
An electrical connection member 125 is located at the connection position with the circuit board 104.
Because the connection position was arranged.
電気的接続部材１２５の位置決めが必要であったが、本
例では、第１の回路基板ｌｏｔと第２の回路ノ＾板１０
４との位置決めは必要であるが、電気的接続部材ｉ２５
との位置決めは不要となる。そのため、第１の回路基板
１０１と第２の回路基板１０４の接続寸法（ｄｌｌ、ｐ
Ｈ）と電気的接続部材の接続寸法（ｄ１２．ＰＩ３）を
適切なｆ／ｉに選ぶことにより位を決めなしで接続する
ことも回部である。Although it was necessary to position the electrical connection member 125, in this example, the first circuit board lot and the second circuit board 10
Although positioning with 4 is necessary, the electrical connection member i25
There is no need for positioning with. Therefore, the connection dimensions (dll, p
It is also possible to connect without determining the position by selecting an appropriate f/i for the connection dimension (d12.PI3) of the electrical connection member.
本例ではアルミニウムよりなる保持体を陽極酸化して陽
極酸化皮膜を形成せしめ、この皮膜を絶縁物質とした。In this example, a holder made of aluminum was anodized to form an anodized film, and this film was used as an insulating material.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第８実施例）
第１１図に第８実施例に使用する電気的接続部材を示す
。(Eighth Example) FIG. 11 shows an electrical connection member used in the eighth example.
第１１図（ａ）は電気的接続部材の斜視図、第１１図（
ｂ）は上記電気的接続部材の断面図である。FIG. 11(a) is a perspective view of the electrical connection member, FIG.
b) is a sectional view of the electrical connection member.
かかる電気的接続部材の作成例を次に述べる。An example of making such an electrical connection member will be described below.
まず、ｆｆ５１実施例に示した製法で、保持体中に金属
部材が絶縁物質を介して埋設されている電気的接続部材
１２８，１２９，１３０を３枚用意する。First, three electrical connection members 128, 129, and 130 each having a metal member embedded in a holder via an insulating material are prepared using the manufacturing method shown in the FF51 example.
１枚目１２８の金Ｊｉ！線１２１の位置はｍ行ｎ列目で
、ｍａ、ｎｂだけ中心から変位している。２枚目１２９
の金属線１２１の位置はｍ５ｎ列目でｍａｃ、ｎｂｃだ
け中心から変位している。３枚目１３０の金ｆ！線１２
１の位置はｍ行ｎ列でｍａｄ、ｎｂｄだけ中心から変位
している。ａ。The first one is 128 gold Ji! The line 121 is located at the mth row and nth column, and is displaced from the center by ma and nb. 2nd piece 129
The position of the metal wire 121 is in the m5nth column and is displaced from the center by mac and nbc. 3rd piece 130 gold f! line 12
The position of 1 is m rows and n columns, and is displaced from the center by mad and nbd. a.
ｂ、ｃ、ｄの値は上下の金属１２１は導通するが左右に
は互いに電気的に導通しないような値をとる。３枚の電
気的接続部材を位置決めし、熱圧着等の方法を用い８１
層し、電気的ｔａ統部材１２５を作成する。The values of b, c, and d are such that the upper and lower metals 121 are electrically conductive, but the left and right sides are not electrically conductive with each other. Position the three electrical connection members and use a method such as thermocompression bonding 81
Then, the electrical connection member 125 is created.
なお、本例においては、電気的接続部材の金属の位置を
ｍ行ｎ列というように規則をもった位置を選んだが、上
下の金属が導通し、左右には互いに電気的に導通しない
ようにすればランダムでもよい。In addition, in this example, the positions of the metals of the electrical connection members were selected according to rules such as m rows and n columns, but the metals on the top and bottom were conductive, and the left and right sides were not electrically conductive with each other. It can be random if you do.
また、本例では３層積層する場合について述べたが、２
枚以上であれば何枚でもよい、また、熱圧着の方法を用
いて請層すると述べたが、圧着、ｍ、２ｆｆ等の方法を
用いてもよい、さらに１本例の電気的接続部材を加工し
て第７図に示すように突起を設けてもよいし、第８図に
示したようにバンブ１５０を設【すてもよい。In addition, although this example describes the case where three layers are laminated, two
Any number of layers may be used as long as it is at least 1 piece. Also, although it has been described that the layers are bonded using a thermocompression bonding method, methods such as crimping, m, 2ff, etc. may also be used. A protrusion may be provided by processing as shown in FIG. 7, or a bump 150 may be provided as shown in FIG.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
（第９実施例）
第１２図に第９実施例に使用する電気的接続部材を示す
。(Ninth Example) FIG. 12 shows an electrical connection member used in the ninth example.
第１２図（ａ）は電気的接続部材の製造途中の断面図、
第１２図（ｂ）は上記電気的接続部材の葛視図、第１２
図（ｃ）は上記の断面図である。FIG. 12(a) is a cross-sectional view of the electrical connection member during manufacture;
FIG. 12(b) is a perspective view of the electrical connection member.
Figure (c) is the above sectional view.
本実施例に係る電気的接続部材１２５の一製造例を述べ
る。An example of manufacturing the electrical connection member 125 according to this embodiment will be described.
予め絶縁被膜を設けた保持体に２０ルｍφより大きい径
の穴１４２をあけておく０次に穴１４２に２０層ｍφの
金等の金属あるいは合金よりなる金属線１２１を通し、
樹脂１２３を保持体１２２と金！Ａ線１２１との間に入
れ、樹ｊ指１２３を硬化させる。硬化した樹脂１２３と
絶縁被膜は絶縁物質となる。その後、金属線１２１を点
線１２４の位置でスライス切断し、電気的接続部材１２
５を作成する。このようにして作成した電気的接続部材
１２５を第１２図（ｂ）、（Ｃ）に示す。A hole 142 with a diameter larger than 20 mφ is drilled in a holder provided with an insulating coating in advance, and a 20 layer metal wire 121 made of a metal such as gold or an alloy is passed through the hole 142.
Resin 123, holding body 122 and gold! It is inserted between the A wire 121 and the tree finger 123 is hardened. The cured resin 123 and the insulating coating become an insulating material. Thereafter, the metal wire 121 is cut into slices at the dotted line 124, and the electrical connection member 12
Create 5. The electrical connection member 125 created in this way is shown in FIGS. 12(b) and 12(C).
また、本例の電気的接続部材を加工して、第７図に示す
ように突起を設けてもよいし、第８図に示すようにバン
ブ１５０を設けてもよい。Further, the electrical connection member of this example may be processed to provide a protrusion as shown in FIG. 7, or a bump 150 as shown in FIG. 8.
本実施例の第１の回路部品及び第２の電気回路部品は、
それぞれ、半導体素子、回路基板、リードフレーム等の
回路基材のうちの１つである。The first circuit component and the second electric circuit component of this example are:
Each of them is one of circuit base materials such as a semiconductor element, a circuit board, and a lead frame.
本例においても接続部は高い信頼性を持って接続されて
いた。In this example as well, the connection section was connected with high reliability.
［発明の効果］
本発明は以上のように構成したので次の数々の効果が得
られる。[Effects of the Invention] Since the present invention is configured as described above, the following numerous effects can be obtained.
１、半導体素子と回路基板、リードフレーム等の回路基
材の接続に関し、信頼性の高い接続が得られる。従って
、従来用いられてきたワイヤポンディング方式、ＴＡＢ
方式、ＣＣＢ方式を若き変えることが可能となる。1. Highly reliable connections between semiconductor elements and circuit substrates such as circuit boards and lead frames can be obtained. Therefore, the conventionally used wire bonding method, TAB
It becomes possible to change the method and CCB method at a young age.
２、本発明によると電気回路部品の接続部をいかなる位
ｔ（特に内部）にも配置することができることからワイ
ヤポンディング方式、ＴＡＢ方式よりもさらに多点接続
が可１近となり、多ビン数接続向きの方式となる。2. According to the present invention, since the connection parts of electric circuit components can be placed anywhere (especially inside), it is possible to connect at even more points than the wire bonding method or the TAB method, and it is possible to connect a large number of bins. This method is suitable for connection.
さらに電気的接続部材の隣接金属間に絶縁物質が存在す
ることにより隣接金属間が電気的に導通しないことより
ＣＣＢ方式よりもさらに多点接続が可能となる。Further, since the presence of an insulating material between adjacent metals of the electrical connection member prevents electrical conduction between adjacent metals, more multi-point connections are possible than in the CCB method.
３、電気的接続部材において使用される金属部材の量は
従来に比べ微量であるため、仮に金属部材に金等の高価
な金属を使用しても従来より安価となる。3. Since the amount of metal members used in the electrical connection member is small compared to the conventional one, even if expensive metal such as gold is used for the metal member, it will be cheaper than the conventional one.
４、高密度の半導体装置等が得られる。4. High-density semiconductor devices and the like can be obtained.
５、電気的接続部材の電気的絶縁物質として熱伝導性の
良い材料を選択することにより、電気回路部品からの放
熱性が良好となり、ひいては放熱性が良い半導体装置が
得られる。特に本発明では電気的接続部材は、金属部材
との接触部を除き金属又は合金により構成されているの
で、特に放熱性が良好な半導体装ｎが得られる。5. By selecting a material with good thermal conductivity as the electrical insulating material of the electrical connection member, the heat dissipation from the electric circuit components becomes good, and as a result, a semiconductor device with good heat dissipation can be obtained. In particular, in the present invention, since the electrical connection member is made of metal or an alloy except for the contact portion with the metal member, a semiconductor device n having particularly good heat dissipation properties can be obtained.
６、電気的接続部材の保持体は金属又は合金からなるの
で、電気回路部品から外部への電磁気ノイズあるいは外
部から電気回路部品へのノイズの侵入を減少せしめるこ
とができ、特性が良好で、信頼性の高い電気回路部材ひ
いては半導体装置が得られる。6. Since the holder of the electrical connection member is made of metal or alloy, it can reduce electromagnetic noise from the electrical circuit components to the outside or noise intrusion from the outside into the electrical circuit components, and has good characteristics and is reliable. Thus, an electric circuit member with high performance and a semiconductor device can be obtained.
７、電気回路部品の両方が、電気接続部材を介して合金
化されており電気回路部品同士が強固（強度的に強く）
かつ確実に接続されるので１機械的に強く、不良率の極
めて低い電気回路部材を得ることができる。7. Both electrical circuit parts are alloyed through electrical connection members, making them strong (strong in terms of strength)
In addition, since the connection is reliable, it is possible to obtain an electrical circuit member that is mechanically strong and has an extremely low defective rate.
第１図は第１実施例を示す断面図である。第１図（ａ）
は１６続前の状態を示し、ｔ５／図（ｂ）は接続後の状
態を示す、第２図は第１実施例に使用する電気的接続部
材の一製造方法例を説明するた冶の園で訊【１ 填’）
Ｉ’ｄ（＾）ｌ十断面園、笛２間（ｂ）は斜視図、第２
図（ｃ）は断面図である。
第３図は第２実施例を示し、第３図（ａ）は斜視図、第
３図（ｂ）は断面図である。第４図は第３実施例を示す
断面図である。第５図は第４実施例を示す断面図である
。第６図は第５実施例を示し、第６図（ａ）は接続前の
状態を示す断面図であり第６図（ｂ）は接続後の状態を
示す断面図である。第７図及び第８図も第５実施例を示
し、第７図Ｃａ）及び第８図（ａ）は斜視図であり、第
７図（ｂ）及び第８図（ｂ）は断面図である。第９図は
ｆ５６実施例を示し、第９図（ａ）は接続前の状態を示
す斜視図であり、第９図（ｂ）は接続後の状態を示す断
面図である。第１０図は第７実施例を示す断面図であり
、第１０図（ａ）は接続前の状態を示し、第１θ図（ｂ
）は接続後の状態を示す、第１１図は第８実施例に係る
電気的接続部材を示し、第１１図（ａ）は斜視図であり
、第１１図（ｂ）は断面図である。第１２図は第９実施
例に係る電気的接続部材の一製造例を示し、第１２図（
ａ）、（ｃ）は断面図であり、第１２図（ｂ）は斜視図
である。第１３図から第２０図ま、では従来例を示し、
第１４図を除き断面図であり、第１４図は平面透視図で
ある。
ｌ・・リードフレーム、２・・リードフレームの素子搭
載部、３・・銀ペースト、４．４′・・半導体素子、５
，５′・φ半導体素子の接続部。
６・・リードフレームの接続部、７・・極細金属線、８
・・樹脂、９・・半導体装置、１０・・半導体素子の外
周縁部、１１・・リードフレームの素子搭載部の外周縁
部、１６・・キャリアフィルム基板、１７・・キャリア
フィルム基板のインナーリード部、２０＠・樹脂、２１
・・樹脂、３１−・半田バンプ、３２拳・基板、３３・
・基板の接続部、５１−一回路基板、５２・・回路基板
の接続部、５４争・電気的接続部材の接続部、５５−・
リードフレーム、６３・・封止材、７０゜７０′・・金
属材、７１．７１’ ・・絶縁膜。
７２ 、７２ ’・・絶縁膜の露出面、７３，７３゜・
・金属材の露出面、７５．７５° ・・回路基材、７６
．７６° ・・回路基材の接続部、７７・・異方性導電
膜の絶縁物質、７８・・異方性導電膜、７９・・導電粒
子、８１・・エラスチックコネクタの絶縁物質、８２−
・エラスチックコネクタの金属線、８３・・エラスチッ
クコネクタ、１０１＠会回路基板、１０２・・接続部、
１０３―ｅ絶縁膜、１０６・・絶縁膜、１０４・・回路
基板、１０５・φ接続部、１０７金屈部材。
１０８・・接続部、１０９−・接続部、１１１−・保持
体、１２１・φ金属線、１２２・・絶縁物質（アルミニ
ウム）、１２３・・樹脂、１２４・・点線、１２５・−
電気的接続部材、１２６・・突起、１２８，１２９，１
３０−−電気的接続部材、１４０・自給縁物質、１４２
・・穴、１５０−・バンプ。
第１図（ａ）
第１図（ｂ）
第２図（ａ）
第２図（ｂ）
第２図（ｃ）
＋２５
第″３図（ａ）
第３図（ｂ）
第４−図
第５図
第６図（ａ）
第６図（ｂ）
第８図（ｂ）
第９図（ａ）
第１０図（ａ）
第１０図（ｂ）
第１１図（０）
第１２図（ａ）
第１３図
第１４図
第１５図
第１６図
３１３１．５６
第１７図
第１８図FIG. 1 is a sectional view showing a first embodiment. Figure 1(a)
shows the state before the 16th connection, t5/Figure (b) shows the state after the connection, and FIG. Inquiry [1 filling')
I'd(^)l Ten section garden, flute 2 room (b) is a perspective view, 2nd
Figure (c) is a cross-sectional view. FIG. 3 shows a second embodiment, with FIG. 3(a) being a perspective view and FIG. 3(b) being a sectional view. FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing the fourth embodiment. 6 shows a fifth embodiment, FIG. 6(a) is a sectional view showing the state before connection, and FIG. 6(b) is a sectional view showing the state after connection. Fig. 7 and Fig. 8 also show the fifth embodiment, Fig. 7 (Ca) and Fig. 8 (a) are perspective views, and Fig. 7 (b) and Fig. 8 (b) are cross-sectional views. be. FIG. 9 shows the f56 embodiment, FIG. 9(a) is a perspective view showing the state before connection, and FIG. 9(b) is a sectional view showing the state after connection. FIG. 10 is a sectional view showing the seventh embodiment, FIG. 10(a) shows the state before connection, and FIG. 1θ(b)
) shows the state after connection, FIG. 11 shows the electrical connection member according to the eighth embodiment, FIG. 11(a) is a perspective view, and FIG. 11(b) is a sectional view. FIG. 12 shows an example of manufacturing an electrical connection member according to the ninth embodiment, and FIG.
12(a) and 12(c) are cross-sectional views, and FIG. 12(b) is a perspective view. 13 to 20 show conventional examples,
14 is a cross-sectional view, except for FIG. 14, which is a plan perspective view. l...Lead frame, 2...Element mounting part of lead frame, 3...Silver paste, 4.4'...Semiconductor element, 5
, 5'·φ Connection part of semiconductor element. 6. Connection part of lead frame, 7. Ultrafine metal wire, 8
...Resin, 9..Semiconductor device, 10..Outer periphery of semiconductor element, 11..Outer periphery of element mounting part of lead frame, 16..Carrier film substrate, 17..Inner lead of carrier film substrate. Part, 20@・Resin, 21
・・Resin, 31・・Solder bump, 32・Fist・Substrate, 33・
・Board connection part, 51-1 Circuit board, 52... Circuit board connection part, 54 ・Connection part of electrical connection member, 55-...
Lead frame, 63... Sealing material, 70°70'... Metal material, 71.71'... Insulating film. 72, 72'...Exposed surface of insulating film, 73, 73°.
・Exposed surface of metal material, 75.75° ・・Circuit base material, 76
．． 76°... Connecting portion of circuit base material, 77... Insulating material of anisotropic conductive film, 78... Anisotropic conductive film, 79... Conductive particles, 81... Insulating material of elastic connector, 82-
・Metal wire of elastic connector, 83... Elastic connector, 101 @ circuit board, 102... Connection part,
103-e insulating film, 106... insulating film, 104... circuit board, 105... φ connection part, 107 metal bending member. 108... Connection portion, 109-. Connection portion, 111-. Holder, 121.φ metal wire, 122.. Insulating material (aluminum), 123.. Resin, 124.. Dotted line, 125.-
Electrical connection member, 126...Protrusion, 128, 129, 1
30--Electrical connection member, 140/Self-sufficient edge material, 142
・Hole, 150-・Bump. Figure 1 (a) Figure 1 (b) Figure 2 (a) Figure 2 (b) Figure 2 (c) +25 Figure 3 (a) Figure 3 (b) Figure 4-Figure 5 Figure 6 (a) Figure 6 (b) Figure 8 (b) Figure 9 (a) Figure 10 (a) Figure 10 (b) Figure 11 (0) Figure 12 (a) Figure 13 Figure 14 Figure 15 Figure 16 Figure 16 3131.56 Figure 17 Figure 18
Claims (1)
する第２の電気回路部品とを、両電気回路部品を電気的
に接続するための電気的接続部材を両者の間に介在させ
て、両電気回路部品の接続部において接続して構成され
る電気回路部材において、 該電気的接続部材は、金属または合金よりなる複数の金
属部材を、該金属部材の一端を第１の電気部品側に露出
させて、一方、該金属部材の他端を該第２の電気回路部
品側に露出させて、金属又は合金からなる保持体に絶縁
物質を介して埋設されており、 第１の電気回路部品の接続部と第１の電気回路部品側に
露出した金属部材の一端とを合金化することにより接続
し、かつ、第２の電気回路部品の接続部と第２の電気回
路部品側に露出した金属部材の一端とを合金化すること
により接続したことを特徴とする電気回路部材。 ２、第１の電気回路部品及び第２の電気回路部品は、そ
れぞれ半導体素子、回路基板やリードフレーム等の回路
基材のうち１つである特許請求範囲第１項記載の電気回
路部材。 ３、絶縁物質は保持体を陽極酸化して形成される陽極酸
化被膜である特許請求の範囲第１項記載項記載の電気回
路部材。[Claims] 1. An electrical connection member for electrically connecting a first electrical circuit component having a connecting portion and a second electrical circuit component having a connecting portion; In an electric circuit member that is interposed between the two and connected at a connecting portion of both electric circuit components, the electric connection member connects a plurality of metal members made of metal or an alloy to one end of the metal member. is exposed to the first electrical component side, while the other end of the metal member is exposed to the second electrical circuit component side, and is embedded in a holder made of metal or alloy with an insulating material interposed therebetween. The connection portion of the first electric circuit component and one end of the metal member exposed on the first electric circuit component side are connected by alloying, and the connection portion of the second electric circuit component and the second end are connected by alloying. An electric circuit member, characterized in that the electric circuit member is connected to one end of the metal member exposed on the electric circuit component side by alloying. 2. The electric circuit member according to claim 1, wherein the first electric circuit component and the second electric circuit component are each one of a semiconductor element, a circuit substrate such as a circuit board, or a lead frame. 3. The electric circuit member according to claim 1, wherein the insulating material is an anodic oxide film formed by anodizing the holding body.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079009A JPS63244850A (en) | 1987-03-31 | 1987-03-31 | Electric circuit member |
| EP98102122A EP0854506A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member and electric circuit member |
| EP88103400A EP0284820A3 (en) | 1987-03-04 | 1988-03-04 | Electrically connecting member, and electric circuit member and electric circuit device with the connecting member |
| US08/597,383 US5967804A (en) | 1987-03-04 | 1996-02-08 | Circuit member and electric circuit device with the connecting member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079009A JPS63244850A (en) | 1987-03-31 | 1987-03-31 | Electric circuit member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63244850A true JPS63244850A (en) | 1988-10-12 |
Family
ID=13677949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079009A Pending JPS63244850A (en) | 1987-03-04 | 1987-03-31 | Electric circuit member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244850A (en) |
-
1987
- 1987-03-31 JP JP62079009A patent/JPS63244850A/en active Pending
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