JPS6324060A - Target of sputtering device - Google Patents
Target of sputtering deviceInfo
- Publication number
- JPS6324060A JPS6324060A JP9490686A JP9490686A JPS6324060A JP S6324060 A JPS6324060 A JP S6324060A JP 9490686 A JP9490686 A JP 9490686A JP 9490686 A JP9490686 A JP 9490686A JP S6324060 A JPS6324060 A JP S6324060A
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- sputtering
- thin film
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 7
- 239000011148 porous material Substances 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 8
- 230000005291 magnetic effect Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 3
- 238000004663 powder metallurgy Methods 0.000 abstract description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract 2
- 239000010419 fine particle Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000702 sendust Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はスパッタリング装置のターゲットの構成に関
する。より詳しくは真空容器の中に被加工物（一方の電
柵）とターゲット（他の電極）を設け、この２つの電極
の間にプラズマを発生させ、強磁性材料からなるターゲ
ットの一部を蒸発させて被加工物の表面に薄膜を形成さ
せるための多孔質ターゲットに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a target for a sputtering apparatus. More specifically, a workpiece (one electric fence) and a target (another electrode) are placed in a vacuum container, and plasma is generated between these two electrodes to evaporate part of the target made of ferromagnetic material. The present invention relates to a porous target for forming a thin film on the surface of a workpiece.
〔従来の技術］
近年、薄膜６ｕ気記録媒体、あるいは薄膜磁気ヘッド等
の薄膜磁性材料の製造法とて、スパッタリング法が一般
的になりつつある。その理由として挙げられるのは。[Prior Art] In recent years, the sputtering method has become common as a method for manufacturing thin film magnetic materials such as thin film 6U recording media or thin film magnetic heads. The reasons for this are:
（１）、下地基板との付着力の強い８膜が得られる。(1) 8 films with strong adhesion to the underlying substrate are obtained.
（２）、広い面積上に均一な厚さの膜が作れる。(2) A film of uniform thickness can be created over a wide area.
（３）、ターゲット組成とほぼ等しい組成の薄膜が得ら
れる。(3) A thin film having approximately the same composition as the target composition can be obtained.
（４）、酸化物等め絶縁材料も薄膜化できる。(4) Insulating materials such as oxides can also be made thinner.
からである。更に、工業的な製造という観点から見ると
、高速で成膜できることが好ましく、このために、種々
のスパッタ方式の中でマグネトロンスパッタ方式が多く
使われている。It is from. Furthermore, from the viewpoint of industrial manufacturing, it is preferable to be able to form a film at high speed, and for this reason, among the various sputtering methods, the magnetron sputtering method is often used.
第１図は従来技術及びこの発明に係る装置の説明図であ
る。図において１は電源（直流あるいは高周波）、２は
内圧を１Ｏ−３Ｔｏｒｒ程度に調圧されたチャンバー、
３：ま強磁性材料からなるターゲット、４は永久磁石、
５は６ｎ気回路を構成するためのヨーク、５ａは他方の
電源１に接読され被加工物である基板６を取り付けるた
めの基板ホルダー、７は真空チャンバー２内を真空にす
るための油回転ポンプ、８（よ超高真空
（約１ ｘ １０−’Ｔｏ ｒ ｒ）を得るためのクラ
イオソープションポンプ、９はＡｒボンベ１ｏ内の流出
ガスの流出を制御するマスフローコントローラ、＋、−
はこの装置を直流電源によって動作させるときの極性を
示している。FIG. 1 is an explanatory diagram of a conventional technique and a device according to the present invention. In the figure, 1 is a power source (DC or high frequency), 2 is a chamber whose internal pressure is regulated to about 10-3 Torr,
3: Target made of ferromagnetic material, 4: Permanent magnet,
5 is a yoke for configuring a 6n air circuit; 5a is a substrate holder connected to the other power source 1 and used to attach a substrate 6, which is a workpiece; 7 is an oil rotor for evacuating the inside of the vacuum chamber 2. pump, 8 (cryosorption pump for obtaining an ultra-high vacuum (approximately 1 x 10-'Torr), 9 a mass flow controller for controlling the outflow of gas in the Ar cylinder 1o, +, -
indicates the polarity when operating this device with a DC power supply.
次にこの動作について説明する。先ず油回転ポンプ７に
よって続いてクライオソープションポンプ８によって真
空チャンバー２内の圧力を１Ｏ−７Ｔｏｒｒ＜らいに吸
引する。次にマスフローコントローラー９を通じてＡｒ
ボンベ１０内のＡｒガスを導入し、真空チャンバ２内の
圧力を１Ｏ−３Ｔｏｒｒ台に調整する。ここで電源１を
動作させればターゲット３の表面付近に高密度Ａｒプラ
ズマを形成し、Ａｒイオンによりターゲット３をスパッ
タするから、ターゲット３を構成している分子のイオン
が飛び出して基板６の表面に薄膜を形成する。この薄膜
の形成速度は非磁性金属で数千〜２０００人／ｍｉｎ、
磁性金属の場合では数百〜数千人、／ ｍ ｉ ｎ程度
と極めて遅いものである。Next, this operation will be explained. First, the pressure inside the vacuum chamber 2 is sucked to 10-7 Torr by the oil rotary pump 7 and then by the cryosorption pump 8. Next, through the mass flow controller 9, Ar
Ar gas in the cylinder 10 is introduced, and the pressure in the vacuum chamber 2 is adjusted to about 10-3 Torr. If the power supply 1 is operated here, a high-density Ar plasma is formed near the surface of the target 3 and the target 3 is sputtered with Ar ions, so the ions of the molecules that make up the target 3 fly out and reach the surface of the substrate 6. Form a thin film on the surface. The formation rate of this thin film is several thousand to 2000 people/min for non-magnetic metals.
In the case of magnetic metals, it is extremely slow, on the order of several hundred to several thousand people/min.
すなわち、磁性金属をスパッタする場合になぜスパッタ
速度が遅くなるかというと、第１図に示すマグネトロン
スパッタの場合、ターゲット３の表面に強磁界を印加す
る必要があるのに、現在のようなターゲットの構成では
、磁界がターゲット３内に吸い込まれてしまい表面付近
に磁界が漏洩しにくいからである。ターゲット３の成分
が高ｊ磁率になるような場合には、この影響がはなはだ
しい。従ってこのような場合にはターゲット３の厚みを
薄くし、磁界をターゲット３の表面からもれ出させる必
要がある。この結果として、−枚のターゲット３あたり
から生産される６丑性薄膜のユは減少し、ターゲット３
を交換するための作業量は増大し、更に、ターゲット３
が脆性を示す場合には、薄く加工するために多大の労力
を要し、歩留も低くなる。In other words, the reason why the sputtering speed is slow when sputtering magnetic metals is that in the case of magnetron sputtering shown in Fig. 1, it is necessary to apply a strong magnetic field to the surface of the target 3, but the current target This is because, in the configuration, the magnetic field is sucked into the target 3, making it difficult for the magnetic field to leak near the surface. This effect is significant when the component of the target 3 has a high magnetic flux. Therefore, in such a case, it is necessary to reduce the thickness of the target 3 so that the magnetic field leaks out from the surface of the target 3. As a result, the number of 6-thin films produced from around target 3 decreases, and
The amount of work to replace target 3 will increase, and
When the material exhibits brittleness, it takes a great deal of effort to process it into a thinner material, and the yield rate also decreases.
従って薄膜磁気記録媒体あるいは薄膜磁気ヘッドの製造
のように大量生産する商品に適用する場合には多大の問
題を含むものである。Therefore, there are many problems when applied to mass-produced products such as the manufacture of thin-film magnetic recording media or thin-film magnetic heads.
上記の様に従来のスパッタリング装置の磁性金属から成
るターゲットにおいてはターゲットの厚さが成る値を越
えるとターゲット表面外に洩れる′６ｆｆ界が減少する
ためスパッタ速度が低下する。そこでターゲットを薄く
すると、この材質は脆い性質を有するために加工性が悪
く、加工費がかさみ永久磁石への取付時あるいはスパッ
タ時に割れを生じることもあり管理上問題が多かった。As mentioned above, in a target made of a magnetic metal in a conventional sputtering apparatus, when the thickness of the target exceeds a certain value, the '6ff field leaking outside the target surface decreases, so that the sputtering speed decreases. Therefore, if the target is made thinner, the brittle nature of this material results in poor workability, increases processing costs, and cracks may occur during attachment to a permanent magnet or during sputtering, which poses many management problems.
（問題点を解決するための手段）
この発明に係るスパッタリング装置のターゲットにおい
ては、真空容器の中に対向する基板とターゲットを設け
、このターゲットと上記基板の間にプラズマを発生させ
、この基板の表面に上記ターゲットの薄膜を蒸着させる
装置において、上記ターゲットには多孔質材料を使用す
るようにしたものである。(Means for Solving the Problems) In the target of the sputtering apparatus according to the present invention, a substrate and a target facing each other are provided in a vacuum container, plasma is generated between the target and the substrate, and plasma is generated between the substrate and the substrate. In an apparatus for depositing a thin film of the target on a surface, the target is made of a porous material.
（作用〕
この発明においてはターゲットの原料として強磁性体の
粉末を用いこれを空隙を有するように厚手に成形したも
のを使用する。永久磁石の磁気回路はターゲットの表面
に迄漏洩してプラズマか形成され易くなりスパッタリン
グが盛んに進行する。(Function) In this invention, ferromagnetic powder is used as the raw material for the target, which is thickly molded to have voids.The magnetic circuit of the permanent magnet leaks to the surface of the target and generates plasma. It becomes easier to form, and sputtering progresses actively.
第１図は、この発明に係る装置の説明図である。図にお
いて１〜１０は従来の技術とほとんど同一であるので説
明を省略する。但しターゲット３の材Ｘが顕著に異って
いるのてこの事について述べる。FIG. 1 is an explanatory diagram of an apparatus according to the present invention. In the figure, numerals 1 to 10 are almost the same as the conventional technology, so the explanation will be omitted. However, we will discuss the fact that the material X of the target 3 is significantly different.
第１実施例としてターゲット３に気孔率の大きい強磁性
材料であるセンダスト合金を用いたので以下に述べる。In the first embodiment, Sendust alloy, which is a ferromagnetic material with a high porosity, was used for the target 3, which will be described below.
センダスト合金粉の化学成分、平均粒径は、第１表のよ
うである。The chemical composition and average particle size of the sendust alloy powder are as shown in Table 1.
第工表 センダスト合金製ターゲットの原料表ｗｔ％Ｆ
これを金型内で７ｔ’／ｃｍ２の圧力で一軸圧縮により
、３インチ径の円板状に成形後、真空焼結を行う。焼結
温度は１０１０’Ｃ１１０７０ｔ：、１１５０℃の３水
準とした。真空度は１Ｏ−５Ｔｏ’ｒｒ＜らいて１時間
保持した材料を追加工せずに実施した。Table 1 Raw material table of Sendust alloy target wt%F This is formed into a disk shape with a diameter of 3 inches by uniaxial compression at a pressure of 7 t'/cm2 in a mold, and then vacuum sintered. The sintering temperature was set at three levels: 1010'C11070t: and 1150°C. The degree of vacuum was 10-5 To'rr<, and the material was held for 1 hour without any additional processing.
第２実施例については第２表に３種の純金属を使用した
ものを示す。Regarding the second embodiment, Table 2 shows the use of three types of pure metals.
第２表 純金属製ターゲットの原料表
これを第１実施例と同様の焼結条件で焼成したが焼結保
持時間は５時間とした。Table 2 List of raw materials for pure metal targets This was fired under the same sintering conditions as in the first example, but the sintering holding time was 5 hours.
第３の実施例とて；士第３表に示す二元合金を用い下記
の組合せ１〜３により混合し、これを焼結したものであ
る。In the third embodiment, the binary alloys shown in Table 3 were mixed in the following combinations 1 to 3, and the mixture was sintered.
第３表 二元合金製ターゲットの原料表組合せ例−１，
２，３は
例−１、Ｆｅ粉＋Ｆｅと１７％Ｓｉ合金粉十Ｆｅと１０
％Ａ１合金粉
例−２、Ｆｅ粉＋Ｆｅと１７％Ｓｉ合金粉＋ＡＩ粉
例−３、Ｆｅ粉＋Ｓｉ粉十
Ｆｅと１０％ＡＩ合金粉
以上３種類の組合せで、それぞれセンダスト合金組成と
なるよう粉の配分を調整し混合し圧粉、焼結は第１実施
例に準じた。焼結保持時間は５時間とした。Table 3 Example of raw material table combination for binary alloy target-1,
2 and 3 are Example-1, Fe powder + Fe and 17% Si alloy powder 10 Fe and 10
%A1 alloy powder example-2, Fe powder + Fe and 17% Si alloy powder + AI powder example-3, Fe powder + Si powder + Fe powder and 10% AI alloy powder A combination of 3 types or more, each powder has a sendust alloy composition. Adjusting the distribution, mixing, compacting, and sintering were carried out in accordance with the first embodiment. The sintering holding time was 5 hours.
これらにより出来上がったものの、条件、板厚、空隙率
を第４表に示す。出来上がった円板状ターゲットはその
ままスパッタ用素材とした。Table 4 shows the conditions, plate thickness, and porosity of the finished product. The completed disk-shaped target was directly used as a material for sputtering.
一方比較材として、溶解鋳造法により第５表に示すよう
な混合比で合金を作製し、機械加工により第４表に示す
ような板厚のものを作製した。On the other hand, as a comparative material, an alloy was prepared using a melting and casting method at a mixing ratio shown in Table 5, and a plate having a thickness shown in Table 4 was prepared by machining.
第４表 ターゲツト材仕様及び比較材仕様第５表 比較
材成分表
ｗｔ％
以上のようにして作製した強磁性ターゲットを用い、第
１図の装置によるマグネトロン、スパッタリングを行な
った。スパッタリング条件は第６表に示す。Table 4 Target material specifications and comparative material specifications Table 5 Comparative material composition table wt% Using the ferromagnetic target produced as described above, magnetron sputtering was performed using the apparatus shown in FIG. The sputtering conditions are shown in Table 6.
第６表 スパッタリング条件の表
第６表に示す条件下において、所定時間スパッタリング
を行ない、基板６をとり出し、触針式膜厚計により生成
膜厚を測定した。Ｆｅ−５ｉ−ＡＩ粉末を焼結したター
ゲット３と機械加工により作製したターゲット３との同
じ板厚のものの生成膜厚の比を第２図に示す。明らかに
本発明の方が生成膜厚スピードが速いことがわかる。ま
た第３図は空隙率と膜生成速度比との関係である。Table 6 Sputtering Conditions Under the conditions shown in Table 6, sputtering was performed for a predetermined period of time, the substrate 6 was taken out, and the thickness of the produced film was measured using a stylus type film thickness meter. FIG. 2 shows the ratio of the film thickness of a target 3 made by sintering Fe-5i-AI powder and a target 3 made by machining, both of which have the same plate thickness. It is clearly seen that the film thickness produced according to the present invention is faster. Moreover, FIG. 3 shows the relationship between porosity and film formation rate ratio.
又スパッタリング終了後、この薄膜を化学分析したとこ
ろ、本発明によって作製した薄膜は、初めに混合したタ
ーゲット３の合金比率と全く同一の組成を示した。Further, when the thin film was chemically analyzed after sputtering, it was found that the thin film produced according to the present invention had exactly the same composition as the alloy ratio of the target 3 mixed at the beginning.
しかしなから比較例として示した鋳造法ではＳｌが９．
２％、Ａ１が５，０％を示し、いずれも混合比よりも低
目となった。However, in the casting method shown as a comparative example, Sl was 9.
2% and A1 was 5.0%, both of which were lower than the mixing ratio.
（発明の効果）
この発明は以上説明した通りターゲットの強磁性材料と
して多孔質の粉末焼結法による合金を用いたので以下に
示すような効果がある。(Effects of the Invention) As explained above, this invention uses a porous alloy produced by a powder sintering method as the ferromagnetic material of the target, and therefore has the following effects.
第一に最終形状（Ｎｅａｒ Ｎｅｔ ５ｈａｐｅ）
が容易に達成でき加工がほとんど不要となる。これはセ
ンダストのような脆性材料の場合大幅なコスト低減につ
ながる。First, the final shape (Near Net 5hape)
can be easily achieved and almost no machining is required. This leads to significant cost reductions for brittle materials such as sendust.
第二に合金成分を厳密に管理することができるので、ス
パッタ・ターゲット内での成分偏析が絶無となり、個々
のターゲットの成分的中率も高い。Second, since the alloy components can be strictly controlled, component segregation within the sputter target is completely eliminated, and the component accuracy of each target is high.
第三に高真空中で製造するのでスパッタ時ターゲットの
消耗にともなうボアの開孔による７囲気の汚染を押える
ことができる。Thirdly, since it is manufactured in a high vacuum, it is possible to prevent contamination of the surrounding atmosphere due to opening of the bore as the target is consumed during sputtering.
第四に粉末性状、焼結条件を這べはボアの分布、形状大
きざを自由に調整することができる。以上の点からポー
ラスターゲット作製には粉末冶金法が極めて有効である
。Fourthly, by adjusting the powder properties and sintering conditions, the bore distribution and shape size can be freely adjusted. From the above points, powder metallurgy is extremely effective for producing porous targets.
更に磁性材料をマグネトロンスパッタつまり第１図の方
法で施工するとスパッタ速度を４〜１５倍速くすること
ができ、薄膜作成コストを大幅に下げることができる。Furthermore, if the magnetic material is applied by magnetron sputtering, that is, the method shown in FIG. 1, the sputtering speed can be increased by 4 to 15 times, and the cost of producing a thin film can be significantly reduced.
又ターゲットの作製に関し、ターゲットを機械加工する
必要がなく加工費を大幅に下げることができる。Further, regarding the production of the target, there is no need to machine the target, and processing costs can be significantly reduced.
又化学成分を粉体の混合比で決められるので、ターゲッ
トの成分管理が容易であり、成分はずれが起きないため
ターゲット製造歩留が高いことである。In addition, since the chemical components can be determined by the mixing ratio of the powder, it is easy to manage the components of the target, and the target production yield is high because the components do not shift.
第１図はこの発明及び従来の技術に係る装置の説明図、
第２図はこの発明による膜成生速度と従来の膜成生速度
の比較を板７９について示す線図、第３図はこの発明に
よる膜成生速度と従来の膜成生速度の比較を空隙率につ
いて示す線図である。
図において、１は電源、２は真空チャンバー、３はター
ゲット、４は永久６ｕ石、５はヨーク、５ａは基板ホル
ダー、６は基板、７は油回転ポンプ、８はクライオソー
プションポンプ、９はマスフローコントローラ、１０は
Ａｒボンベである。
代理人 弁理士 佐 藤 正 年
５：ヨーク
５０．基板ホルタ−
６：答 板
７、油回転ボンフ″
８、タライオンーブノヨン木°ンフ“
９：マヌフローコントローラー
１０ ： Ａｒボンへ
第 ３ 図
（扱ツマＬユ全で５ｍｍ）FIG. 1 is an explanatory diagram of a device according to the present invention and the conventional technology;
FIG. 2 is a diagram showing a comparison between the film formation rate according to the present invention and the conventional film formation rate for the plate 79, and FIG. It is a line diagram showing a rate. In the figure, 1 is a power supply, 2 is a vacuum chamber, 3 is a target, 4 is a permanent 6u stone, 5 is a yoke, 5a is a substrate holder, 6 is a substrate, 7 is an oil rotary pump, 8 is a cryosorption pump, and 9 is a The mass flow controller 10 is an Ar cylinder. Agent: Patent Attorney Tadashi Sato Year 5: York 50. Substrate Holter 6: Answer Plate 7, Oil rotary bong 8, Tallion wood 9: Manuflow controller 10: To Ar bong Fig. 3 (Total handling knob L 5mm)
Claims (2)
け、このターゲットと上記基板の間にプラズマを発生さ
せ、この基板の表面に上記ターゲットの薄膜を蒸着させ
る装置において、上記ターゲットには多孔質材料を使用
することを特徴とするスパッタリング装置のターゲット
。(1). A device in which a substrate and a target facing each other are provided in a vacuum container, plasma is generated between the target and the substrate, and a thin film of the target is evaporated on the surface of the substrate, in which a porous material is used for the target. A sputtering device target characterized by:
部に空隙を含む強磁性体であることを特徴とする特許請
求の範囲第１項記載のスパッタリング装置のターゲット
。(2). 2. The target for a sputtering apparatus according to claim 1, wherein the porous material is a ferromagnetic material containing voids inside formed by a powder sintering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9490686A JPS6324060A (en) | 1986-04-25 | 1986-04-25 | Target of sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9490686A JPS6324060A (en) | 1986-04-25 | 1986-04-25 | Target of sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6324060A true JPS6324060A (en) | 1988-02-01 |
Family
ID=14123059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9490686A Pending JPS6324060A (en) | 1986-04-25 | 1986-04-25 | Target of sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6324060A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941920A (en) * | 1987-11-25 | 1990-07-17 | Hitachi Metals, Ltd. | Sintered target member and method of producing same |
| JPH02200778A (en) * | 1989-01-31 | 1990-08-09 | Daido Steel Co Ltd | Sputtering target |
| JPH03278408A (en) * | 1989-09-12 | 1991-12-10 | Nikko Kyodo Co Ltd | Fe-si-al alloy thin magnetic film and manufacture thereof |
| WO2013046780A1 (en) * | 2011-09-30 | 2013-04-04 | Jx日鉱日石金属株式会社 | Fe-Al BASED ALLOY SPUTTERING TARGET |
-
1986
- 1986-04-25 JP JP9490686A patent/JPS6324060A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941920A (en) * | 1987-11-25 | 1990-07-17 | Hitachi Metals, Ltd. | Sintered target member and method of producing same |
| JPH02200778A (en) * | 1989-01-31 | 1990-08-09 | Daido Steel Co Ltd | Sputtering target |
| JPH03278408A (en) * | 1989-09-12 | 1991-12-10 | Nikko Kyodo Co Ltd | Fe-si-al alloy thin magnetic film and manufacture thereof |
| WO2013046780A1 (en) * | 2011-09-30 | 2013-04-04 | Jx日鉱日石金属株式会社 | Fe-Al BASED ALLOY SPUTTERING TARGET |
| JP5554420B2 (en) * | 2011-09-30 | 2014-07-23 | Ｊｘ日鉱日石金属株式会社 | Fe-Al alloy sputtering target |
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