JPS63239134A - Method for depositing glass corpuscles - Google Patents
Method for depositing glass corpusclesInfo
- Publication number
- JPS63239134A JPS63239134A JP7538587A JP7538587A JPS63239134A JP S63239134 A JPS63239134 A JP S63239134A JP 7538587 A JP7538587 A JP 7538587A JP 7538587 A JP7538587 A JP 7538587A JP S63239134 A JPS63239134 A JP S63239134A
- Authority
- JP
- Japan
- Prior art keywords
- burner
- turntable
- substrate
- glass
- gamma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 31
- 238000000151 deposition Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims description 25
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
- C03B37/0142—Reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1484—Means for supporting, rotating or translating the article being formed
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/42—Assembly details; Material or dimensions of burner; Manifolds or supports
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/60—Relationship between burner and deposit, e.g. position
- C03B2207/66—Relative motion
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/70—Control measures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Optical Integrated Circuits (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の対象］
本発明は、石英ガラス光導波路素子の形成等に用いるガ
ラス微粒子の堆積法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] The present invention relates to a method for depositing glass particles used for forming silica glass optical waveguide elements.
［従来技術］ 従来技術について、第１図を用いて説明する。[Prior art] The prior art will be explained using FIG. 1.
カーボンあるいは、石英ガラス等より成るターンテーブ
ル１の中心から半径「の円周上に、シリコンあるいは石
英ガラスの基板２が配置されている。ターンテーブル１
は、一定の回転角速度ωで回転する。バーナ３は、ター
ンテーブル１の中心から外側、外側から中心に向けて反
復した並進運動を行うことができる。バーナ３には、フ
レーム用ガスであるＨ 、ＯをそれぞれＨ２ポート５
、０２ボート６より、またフレーム制御用ガスであるＡ
ｒをＡｒポート７より、さらにガラス原料用ガスである
５ｉＣｊ！ 、ＴｉＣ１） 、ＧｅＣ（１４等のガ
ラス原料をボート８より送り込んでいる。A substrate 2 made of silicon or quartz glass is disposed on the circumference of a turntable 1 made of carbon, quartz glass, etc. with a radius of ``from the center.Turntable 1
rotates at a constant rotational angular velocity ω. The burner 3 can perform repeated translational movements from the center of the turntable 1 to the outside and from the outside to the center. Burner 3 is supplied with flame gases H2 and O at H2 port 5, respectively.
, from 02 boat 6, and A, which is a flame control gas.
r from Ar port 7, and 5iCj!, which is glass raw material gas! , TiC1), GeC (14, etc.) are sent from boat 8.
バーナ３から発する火炎４を、シリコンあるいは石英ガ
ラスの基板２に吹き付けると、ガラス原料ガスである５
ＬＣＩ 、ＴｉＣｊＪ 、ＧｅＣｆ１４は、加水分解
反応により０．１μｍ〜１μｍｆｚ度のガラス微粒子と
なり、基板２の上に堆積する。When flame 4 emitted from burner 3 is blown onto silicon or quartz glass substrate 2, glass material gas 5
LCI, TiCjJ, and GeCf14 become fine glass particles of 0.1 μm to 1 μm fz degree through a hydrolysis reaction, and are deposited on the substrate 2.
尚、加水分解反応により生じたＨＣｆｉ等のガスを排気
管９により排気する。本ガラス微粒子堆積法においては
、一度に多数の基板上にガラス微粒子を形成できるとい
う利点を持つが、均一な厚さのガラス微粒子を形成する
ことは容易なことではない。Note that gases such as HCfi generated by the hydrolysis reaction are exhausted through an exhaust pipe 9. Although this glass particle deposition method has the advantage of being able to form glass particles on a large number of substrates at once, it is not easy to form glass particles with a uniform thickness.
例えば、従来法においては、
ｒω、： ターンテーブルの回転速度
ｄ 「
の条件により堆積を行なりでいた。この従来法により堆
積したガラス微粒子膜厚分布を第２図に示す。横軸は、
ターンテーブル中心からの距Ｍｒ、縦軸は、相対膜厚で
ある。第２図により明らかなように、従来の堆積法では
、膜厚は、大きく変化していることがわかる。For example, in the conventional method, deposition could be carried out under the following conditions: rω: rotational speed of the turntable d''. Figure 2 shows the thickness distribution of glass particles deposited by this conventional method. The horizontal axis is
The distance Mr from the center of the turntable, the vertical axis is the relative film thickness. As is clear from FIG. 2, it can be seen that the film thickness varies greatly with the conventional deposition method.
因みに、このときのバーナ先端の軌跡は第３図に示すよ
うになる。第３図において、１はターンテーブルであり
、３１はバーナ先端の軌跡である。Incidentally, the trajectory of the burner tip at this time is as shown in FIG. In FIG. 3, 1 is a turntable, and 31 is a locus of the tip of the burner.
［発明の目的と要点］
本発明の目的は、前記した従来技術の欠点を解消し、均
一な厚さのガラス微粒子膜を形成することができる新規
な、ガラス微粒子堆積法を提供することにある。[Purpose and main points of the invention] An object of the present invention is to provide a novel glass particle deposition method capable of eliminating the drawbacks of the conventional techniques described above and forming a glass particle film with a uniform thickness. .
すなわち、本発明の要旨は、ターンテーブルの分大きく
し、かつターンテーブルの中心からの距した動きとなる
ように制御してガラス微粒子を堆積することにある。That is, the gist of the present invention is to increase the size of the turntable and to deposit glass particles by controlling the movement to be a distance from the center of the turntable.
［発明の実施例］
本発明について、実施例を示しながら具体的に説明する
。[Examples of the Invention] The present invention will be specifically described with reference to Examples.
ターンテーブルの回転速度「ωとバーナの並進回転速度
ｒω） 並進速度□
ｔ
ｄｒ １
となる様な条件でガラス微粒子を堆積する場合、バーナ
先端の軌跡は第４図に示すようになる。When glass particles are deposited under conditions such that the rotational speed of the turntable is ω and the translational rotational speed of the burner is rω, the trajectory of the burner tip is as shown in FIG. 4.
ここで、単位時間にバーナ３から発するガラス微粒子量
が一定であるとすると、合成速度（回転はど、微粒子は
厚く堆積する。（効果１）また、バーナから発するガラ
ス微粒子はある分布を持っており、第４図に示す、バー
ナ先端の軌跡３１の間隔が狭いほど、微粒子が重なり合
うため、厚く堆積する。（効果２）
例えば、従来法である
の条件を用いて堆積した場合、バーナ先端の軌跡３１は
第３図に示したようにほぼ一定の間隔となっている。Here, assuming that the amount of glass particles emitted from the burner 3 per unit time is constant, the particles will accumulate thickly depending on the synthesis rate (rotation speed). (Effect 1) Also, the glass particles emitted from the burner will have a certain distribution. As shown in Fig. 4, the narrower the interval between the burner tip trajectories 31, the thicker the particles are deposited because they overlap.(Effect 2) For example, when depositing using the conventional method conditions, the burner tip The trajectories 31 are spaced at approximately constant intervals as shown in FIG.
元来、中心はど合成速度
が小さいため、この場合には必然的に中心側に厚く堆積
することになる。また、本発明の条件である
によれば、第４図に示したバーナ先端の軌跡３１の間隔
が中心はど広くなるため、効果１と効果２とが相互に打
ち消し合い、均一な厚さのガラス微粒子を堆積できる。Originally, the synthesis rate at the center is low, so in this case, it will inevitably be thickly deposited toward the center. Furthermore, according to the conditions of the present invention, the interval between the loci 31 of the burner tips shown in FIG. Glass particles can be deposited.
にバーナの動きを制御するためには、例えば、第５図に
示す制御系を用いるとよい。In order to control the movement of the burner, for example, a control system shown in FIG. 5 may be used.
ターンテーブル１上におけるバーナ先端５１の位置ｒを
ポテンショメータ５２により電圧Ｖに変換し、電圧計５
３とコントローラ５４により電圧■を読み取り□に比例
した電圧を、Ｄ、Ｃ。The position r of the burner tip 51 on the turntable 1 is converted into a voltage V by the potentiometer 52, and the voltmeter 5
3 and the controller 54 read the voltage ■ and output the voltage proportional to □ to D and C.
電源５５を用いて、Ｄ、Ｃ，モータ５６に印加する。Ｄ
、Ｃ，モータ５６は、台形ネジ５７に取り付けられたバ
ーナ固定用アーム５８により、バーナ３の並進運動を行
なう。以上の様な制御系を用いて、堆積したガラス微粒
子の膜厚分布を第６図に示す。横軸は、ターンテーブル
中心から距離「、縦軸はガラス微粒子の相対膜厚である
。本発明のガラス微粒子堆積法により形成した膜厚の均
一性は従来法に比べ、大きく改善されている。A power supply 55 is used to apply power to D, C, and motors 56. D
, C, the motor 56 translates the burner 3 by means of a burner fixing arm 58 attached to a trapezoidal screw 57. FIG. 6 shows the film thickness distribution of the glass particles deposited using the control system as described above. The horizontal axis is the distance from the center of the turntable, and the vertical axis is the relative film thickness of the glass particles.The uniformity of the film thickness formed by the glass particle deposition method of the present invention is greatly improved compared to the conventional method.
の１０倍程度であれば良いと認められる。It is recognized that a value of about 10 times is sufficient.
運動させるかわりにターンテーブルを並進運動させても
よいが、この場合には、ターンテーブルは、回転運動と
並進運動の両方の機能を持たせる必要がある。Instead of movement, the turntable may be moved in translation, but in this case, the turntable needs to have both rotational and translational movement functions.
［発明の効果］
本発明によれば、均一な厚さのガラス微粒子膜を一度に
多数の基板上に堆積することが可能となり、均一性が従
来より極めて高くなるので、本発明の工業上の価値は極
めて大きいものである。[Effects of the Invention] According to the present invention, it becomes possible to deposit glass fine particle films of uniform thickness on a large number of substrates at once, and the uniformity is much higher than that in the past. The value is extremely large.
第１図は、従来のガラス微粒子堆積法の一実施例を示す
説明図、第２図は、従来のガラス微粒子堆積法により形
成された膜厚分布の一例を示す線図、第３図は、従来の
ガラス微粒子堆積法におけるバーナ先端の軌跡を示す説
明図、第４図は、本発明のガラス微粒子堆積法における
バーナ先端の軌跡を示す説明図、第５図は、本発明ガラ
ス微粒子堆積法を実施するための制御系の一例を示す説
明図であり、第６図は、本発明ガラス微粒子堆積法によ
り形成された膜厚分布の一例を示す線図である。
１：ターンテーブル、
２：シリコン基板あるいは石英ガラス基板、３：バーナ
、
４：火炎、
５ ：Ｈ２ボート、
６ ：０２ボート、
７：Ａｒポート、
８ニガラス原料ボート、
９：排気管、
３１：バーナ先端の軌跡、
５１：バーナ先端、
５２：ポテンショメータ、
５３：１！圧計、
５４：コントローラ、
５５：Ｄ、Ｃ，電源、
５６：Ｄ、Ｃ，モータ、
５７：台形ネジ、
５８：バーナ固定用アーム。
５ＬＣＩＡ 第 １ 口
Ｔ・弘
ツ
宛３１２１
箇４ 図
第２ 図
′＃Ｊ ６ 図FIG. 1 is an explanatory diagram showing an example of a conventional glass particle deposition method, FIG. 2 is a diagram showing an example of film thickness distribution formed by a conventional glass particle deposition method, and FIG. FIG. 4 is an explanatory diagram showing the trajectory of the burner tip in the conventional glass particle deposition method. FIG. 4 is an explanatory diagram showing the trajectory of the burner tip in the glass particle deposition method of the present invention. FIG. FIG. 6 is an explanatory diagram showing an example of a control system for implementing the method, and FIG. 6 is a diagram showing an example of a film thickness distribution formed by the glass fine particle deposition method of the present invention. 1: Turntable, 2: Silicon substrate or quartz glass substrate, 3: Burner, 4: Flame, 5: H2 boat, 6: 02 boat, 7: Ar port, 8 Niglass raw material boat, 9: Exhaust pipe, 31: Burner Tip locus, 51: Burner tip, 52: Potentiometer, 53:1! Pressure gauge, 54: Controller, 55: D, C, power supply, 56: D, C, motor, 57: Trapezoidal screw, 58: Burner fixing arm. 5LCIA No. 1 Addressed to T. Hirotsu 3121 Clause 4 Figure 2 Figure '#J 6 Figure
Claims (1)
上で、ターンテーブル１の中心から半径ｒの位置に基板
２を配置し、バーナ３によりガラス微粒子を供給して前
記基板２上にガラス微粒子を堆積する方法において、基
板２の回転速度ｒω及び前記バーナ３の並進速度ｄｒ／
ｄｔをそれぞれ次のように制御することを特徴とするガ
ラス微粒子堆積法。 ｒω≫ｄｒ／ｄｔ （ｄｒ／ｄｔ）∝１／ｒ(1) Turntable 1 rotating at a constant rotational angular velocity ω
In the method described above, the substrate 2 is placed at a position with a radius r from the center of the turntable 1, and the glass particles are supplied by the burner 3 to deposit the glass particles on the substrate 2. Translational speed of burner 3 dr/
A glass particle deposition method characterized in that dt is controlled as follows. rω≫dr/dt (dr/dt)∝1/r
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075385A JPH0617239B2 (en) | 1987-03-27 | 1987-03-27 | Glass particle deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075385A JPH0617239B2 (en) | 1987-03-27 | 1987-03-27 | Glass particle deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63239134A true JPS63239134A (en) | 1988-10-05 |
| JPH0617239B2 JPH0617239B2 (en) | 1994-03-09 |
Family
ID=13574674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62075385A Expired - Lifetime JPH0617239B2 (en) | 1987-03-27 | 1987-03-27 | Glass particle deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0617239B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001079126A1 (en) * | 2000-04-14 | 2001-10-25 | Heraeus Quarzglas Gmbh & Co. Kg | Method and device for producing a quartz glass body |
| KR20010099086A (en) * | 2001-08-28 | 2001-11-09 | 권순창 | controling methode torch and turntable for flame hydrolysis deposition |
| US6504983B1 (en) | 2000-03-30 | 2003-01-07 | The Furukawa Electric Co., Ltd. | Optical waveguide and method for fabricating the same |
| US6563986B2 (en) | 2000-03-28 | 2003-05-13 | The Furukawa Electric Co., Ltd. | Arrayed waveguide grating |
| KR100389577B1 (en) * | 2001-06-26 | 2003-06-27 | 주식회사 세미텔 | Uniform Deposition System Of A Semiconductor Wafer And Storage Medium Thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62288802A (en) * | 1986-06-09 | 1987-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of quartz optical waveguide |
-
1987
- 1987-03-27 JP JP62075385A patent/JPH0617239B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62288802A (en) * | 1986-06-09 | 1987-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of quartz optical waveguide |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563986B2 (en) | 2000-03-28 | 2003-05-13 | The Furukawa Electric Co., Ltd. | Arrayed waveguide grating |
| US6504983B1 (en) | 2000-03-30 | 2003-01-07 | The Furukawa Electric Co., Ltd. | Optical waveguide and method for fabricating the same |
| WO2001079126A1 (en) * | 2000-04-14 | 2001-10-25 | Heraeus Quarzglas Gmbh & Co. Kg | Method and device for producing a quartz glass body |
| KR100389577B1 (en) * | 2001-06-26 | 2003-06-27 | 주식회사 세미텔 | Uniform Deposition System Of A Semiconductor Wafer And Storage Medium Thereof |
| KR20010099086A (en) * | 2001-08-28 | 2001-11-09 | 권순창 | controling methode torch and turntable for flame hydrolysis deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0617239B2 (en) | 1994-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE59201645D1 (en) | Method and device for coating particles. | |
| JPS63239134A (en) | Method for depositing glass corpuscles | |
| JPH0533305B2 (en) | ||
| JPS58114763A (en) | Method for forming thin film | |
| JPH0516193Y2 (en) | ||
| JPH0616491B2 (en) | Vapor phase epitaxial growth system | |
| KR100389577B1 (en) | Uniform Deposition System Of A Semiconductor Wafer And Storage Medium Thereof | |
| EP3677555A1 (en) | Method for producing glass fine particle deposit, method for producing glass base material, and glass fine particle deposit | |
| JPH069235A (en) | Method for flame deposition | |
| JPH10273777A (en) | Inductively coupled plasma cvd system and uniform deposition method using the same | |
| JPH0285368A (en) | Formation of amorphous silicon film | |
| JPS6316617A (en) | Vapor growth equipment | |
| JP3130977B2 (en) | Thin film forming method and apparatus | |
| JPH08262252A (en) | Production of optical waveguide film | |
| JPH0226851A (en) | Method and device for forming film over entire surface of spherical glass | |
| JPH02243530A (en) | Production of base material for optical fiber | |
| JPH0535223B2 (en) | ||
| JPH04177721A (en) | Vapor growth device | |
| JP3381309B2 (en) | Method for producing glass particle deposit | |
| JPH03247594A (en) | Method for synthesizing diamond | |
| JPH05147956A (en) | Apparatus for producing oxide glass thin film | |
| JPS63213673A (en) | Microwave plasma thin film forming device | |
| JPH05186232A (en) | Apparatus for producing glass thin film | |
| JPH068180B2 (en) | Glass film deposition equipment | |
| JPS6230147B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |