JPS63237530A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS63237530A JPS63237530A JP7212887A JP7212887A JPS63237530A JP S63237530 A JPS63237530 A JP S63237530A JP 7212887 A JP7212887 A JP 7212887A JP 7212887 A JP7212887 A JP 7212887A JP S63237530 A JPS63237530 A JP S63237530A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- dry etching
- gas
- etching method
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000006378 damage Effects 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、ドライエツチング方法に係わり、特にマグネ
トロン放電を利用したドライエツチング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Objective of the Invention (Industrial Application Field) The present invention relates to a dry etching method, and particularly to a dry etching method using magnetron discharge.
（従来の技術）
近年、高集積デバイス製造のための微細加工には、主と
して反応性イオンエツチング技術（ＲＩＥ法）が使用さ
れている。反応性イオンエツチング法とは、一対の対向
する電極を、有する真空チャンバ内の片方の電極上にウ
ェハ（被処理基体）を置き、例えばＣＦ４等のハロゲン
電子を含有するガスを該チャンバ内に導入し、上記一対
の電極間に高周波電力を印加してガスを放電せしめ、発
生したイオンやラジカルを用いて被処理基体をエツチン
グする方法である。(Prior Art) In recent years, reactive ion etching technology (RIE method) has been mainly used for microfabrication for manufacturing highly integrated devices. In the reactive ion etching method, a wafer (substrate to be processed) is placed on one electrode in a vacuum chamber having a pair of opposing electrodes, and a gas containing halogen electrons, such as CF4, is introduced into the chamber. In this method, high frequency power is applied between the pair of electrodes to discharge gas, and the generated ions and radicals are used to etch the substrate to be processed.
上記方法を利用したエツチング装置では、大型チャンバ
内に例えば１０〜２０枚のウェハを一度に入れてエツチ
ングを行うバッチ式装置と、小型チャンバ内に１枚のウ
ェハのみを入れてエツチングを行う枚葉式装置とがある
。ＬＳＩのパターンは今後も益々微細化し、且つＳｔウ
ェハ径は８インチや１２インチと拡大する一途を辿って
いる。従って、大口径ウェハ表面上に均一に微細パター
ンを形成するためには、枚葉式装置の方が有利であり、
この方式が徐々にではあるが主流になりつつある。Etching apparatuses using the above method include batch-type apparatuses that perform etching by placing, for example, 10 to 20 wafers in a large chamber at a time, and single-wafer etching apparatuses that perform etching by placing only one wafer in a small chamber. There is a type device. LSI patterns will continue to become finer in the future, and the diameter of St wafers will continue to increase to 8 inches or 12 inches. Therefore, in order to uniformly form a fine pattern on the surface of a large-diameter wafer, a single-wafer type device is more advantageous.
This method is gradually becoming mainstream.
当然のことであるが、枚葉式エツチング装置は、もしエ
ツチング速度が等しければバッチ式エツチング装置に比
べて処理能力は低い。従って、枚葉式エツチング装置で
は、磁場を利用してマグネトロン放電を起こす、或いは
ホローカソード放電を起こす等、放電効率を高める工夫
がなされている。Naturally, a single wafer type etching apparatus has a lower throughput than a batch type etching apparatus if the etching speed is the same. Therefore, in single-wafer etching apparatuses, measures have been taken to increase the discharge efficiency, such as by using a magnetic field to generate magnetron discharge or by generating hollow cathode discharge.
マグネトロン放電を利用したドライエツチング装置では
、被処理基体を裁置した陰極或いは陽極の裏面側に磁場
発生器を設置し、各電極間に磁場を印加する。そして、
陰極の表面上に形成されたシースを横切る電場と磁場発
生器の形成する磁場とが直交する領域で電子をサイクロ
イド運動させて密なプラズマを形成し、このプラズマ中
のイオンにより被処理基体を高速にエツチングする。ま
た、磁場発生器を回転させることにより、プラズマを均
一に形成して被処理基体を均一にエツチングすることが
可能となる。In a dry etching apparatus using magnetron discharge, a magnetic field generator is installed on the back side of a cathode or anode on which a substrate to be processed is placed, and a magnetic field is applied between each electrode. and,
In the region where the electric field that crosses the sheath formed on the surface of the cathode and the magnetic field formed by the magnetic field generator are perpendicular to each other, electrons are moved in a cycloid to form a dense plasma, and the ions in this plasma move the substrate to be processed at high speed. Etching. Further, by rotating the magnetic field generator, it becomes possible to uniformly form plasma and uniformly etch the substrate to be processed.
しかしながら、この種の磁場を利用したドライエツチン
グ方法にあっては次のような問題があった。即ち、反応
性イオンエツチングは、良く知られているように荷電粒
子による照射損傷を伴う。However, this type of dry etching method using a magnetic field has the following problems. That is, as is well known, reactive ion etching involves radiation damage caused by charged particles.
なかでもゲート電極のエツチング省時のゲート酸化膜の
静電破壊は重要な問題である。これに対し磁場を用いた
装置は、磁場の作用により放電電圧が低下するためイオ
ンのエネルギーが低（、イオン衝撃による損傷が少ない
と云う長所があり、磁場が大きい程損傷は少なくなる。Among these, electrostatic damage to the gate oxide film during etching of the gate electrode is an important problem. On the other hand, devices using a magnetic field have the advantage that the discharge voltage is lowered by the action of the magnetic field, so the energy of the ions is low (and there is less damage due to ion bombardment); the larger the magnetic field, the less damage occurs.
ところが、本発明者等の実験によれば、磁場の強度を大
きくして荷電粒子による損傷を少なくしてもゲート酸化
膜の破壊は完全には防止されず、また磁場を大きくする
程ゲート酸化膜の破壊制度が高くなることが判明した。However, according to experiments conducted by the present inventors, destruction of the gate oxide film is not completely prevented even if the damage caused by charged particles is reduced by increasing the magnetic field strength, and that the gate oxide film is destroyed as the magnetic field is increased. It was found that the destructive system of
（発明が解決しようとする問題点）
このように従来、磁場を用いたドライエツチングにおい
ては、荷電粒子の照射損傷を少なくすることは可能であ
るが、ゲート酸化膜の破壊を防止することは困難であっ
た。(Problems to be solved by the invention) As described above, in conventional dry etching using a magnetic field, it is possible to reduce the damage caused by charged particle irradiation, but it is difficult to prevent the destruction of the gate oxide film. Met.
本発明は上記事情を考慮してなされたもので、その目的
とするところは、荷電粒子による照射損傷を少なくする
ことができると共に、エツチングによるゲート酸化膜の
破壊を防止することができ、微細パターンの形成に適し
たドライエツチング方法を提供することにある。The present invention has been made in consideration of the above circumstances, and its purpose is to reduce irradiation damage caused by charged particles, prevent destruction of the gate oxide film due to etching, and provide fine patterning. An object of the present invention is to provide a dry etching method suitable for forming.
［発明の構成］
（問題点を解決するための手段）
本発明の骨子は、磁場の強さを所定の値以下に設定する
ことにより、ゲート酸化膜の破壊を防止することにある
。[Structure of the Invention] (Means for Solving the Problems) The gist of the present invention is to prevent destruction of the gate oxide film by setting the strength of the magnetic field to a predetermined value or less.
前述したゲート酸化膜の破壊現象について本発明者等が
鋭意研究を重ねた結果、ゲート酸化膜破壊の頻度は磁場
の強さに依存することが判明した。As a result of extensive research by the present inventors regarding the aforementioned gate oxide film breakdown phenomenon, it has been found that the frequency of gate oxide film breakdown depends on the strength of the magnetic field.
その理由は明らかではないが、磁場の印加によりマグネ
トロン放電領域とグロー放電領域との間に電位差が生じ
、この電位差によりウェハ内で電流が流れてゲート酸化
膜の破壊が生じるからであると考えられる。そして、本
発明者等の実験によれば、陰極の表面近傍における磁場
の強さを４００ガウス以下に設定すれば、ゲート酸化膜
の破壊が著しく少なくすることも判明した。The reason for this is not clear, but it is thought that the application of a magnetic field creates a potential difference between the magnetron discharge region and the glow discharge region, and this potential difference causes current to flow within the wafer, causing destruction of the gate oxide film. . According to experiments conducted by the present inventors, it has also been found that if the strength of the magnetic field near the surface of the cathode is set to 400 Gauss or less, destruction of the gate oxide film can be significantly reduced.
即ち本発明は、被処理基体が載置される第１の電極及び
この電極に対向配置される第２の電極を備えた容器と、
この容器内に所定のガスを供給する手段と、上記容器内
のガスを排気する手段と、前記第１及び第２の電極間に
高周波電力を印加する手段と、前記第２の電極の前記第
１の電極に対向する側と反対側に配置され前記各電極間
に磁界を印加する磁界印加手段とを具備したドライエツ
チング装置を用い、表面にエツチングマスクが形成され
た被処理基体をエツチングするに際し、前記第１の電極
の表面近傍における磁界強度を４００ガウス以下に設定
するようにした方法である。That is, the present invention provides a container equipped with a first electrode on which a substrate to be processed is placed and a second electrode arranged opposite to this electrode;
means for supplying a predetermined gas into the container; means for exhausting the gas in the container; means for applying high frequency power between the first and second electrodes; When etching a substrate to be processed having an etching mask formed on its surface using a dry etching apparatus equipped with a magnetic field applying means disposed on a side facing one electrode and a magnetic field applying means disposed on the opposite side to apply a magnetic field between the respective electrodes. In this method, the magnetic field strength near the surface of the first electrode is set to 400 Gauss or less.
（作用）
磁場発生器を陽極側に設置したドライエツチング装置の
場合、磁場は陽極側から陰極側に供給され、磁場と陰極
効果電圧との相互作用でマグネトロン放電を起こす。こ
の際、陽極側からの磁場は第８図に示す如く磁石の間隙
で最も大きく、磁石上で小さくなる分布を持つ。磁場が
強い程この分布は急峻になり、放電はなくなるが、マグ
ネトロン放電領域と通常のグロー放電領域との間に大き
な電位差を生じ、この電位差によりウェハ内で電流が流
れてゲート酸化膜が破壊される。そこで本発明のように
、陰極表面での磁場強度を４００ガウス以下に設定する
と、上記電位差がなくなるわけではないが、ゲート酸化
膜の破壊は著しく少なくなった。(Operation) In the case of a dry etching device in which a magnetic field generator is installed on the anode side, the magnetic field is supplied from the anode side to the cathode side, and the interaction between the magnetic field and the cathode effect voltage causes magnetron discharge. At this time, the magnetic field from the anode side has a distribution that is largest at the gap between the magnets and becomes smaller on the magnets, as shown in FIG. The stronger the magnetic field, the steeper the distribution becomes, and the discharge disappears, but a large potential difference is created between the magnetron discharge region and the normal glow discharge region, and this potential difference causes current to flow within the wafer, destroying the gate oxide film. Ru. Therefore, when the magnetic field strength at the cathode surface is set to 400 Gauss or less as in the present invention, although the above-mentioned potential difference does not disappear, the destruction of the gate oxide film is significantly reduced.
（実施例） 以下、本発明の詳細を図示の実施例によって説明する。(Example) Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図は、本発明の一実施例方法に使用したドライエツ
チング装置を示す概略構成図である。図中１１は真空容
器、１２は容器１１の底部に設けられた陰極（第１の電
極）、１３は陰極１２上に載置されたウェハ（被処理基
体）、１４はマツチング回路、１５は陰極１２に高周波
電力を印加するための高周波電源、１６は容器１１の上
部に設けられた陽極（第２の電極）であり、各電極１２
゜１６間の距離は例えば１５［ｃＩＩ］に設定されてい
る。FIG. 1 is a schematic diagram showing a dry etching apparatus used in an embodiment of the present invention. In the figure, 11 is a vacuum container, 12 is a cathode (first electrode) provided at the bottom of the container 11, 13 is a wafer (substrate to be processed) placed on the cathode 12, 14 is a matching circuit, and 15 is a cathode. 12 is a high-frequency power source for applying high-frequency power; 16 is an anode (second electrode) provided at the top of the container 11;
The distance between degrees 16 and 16 is set to 15 [cII], for example.
１７は磁石１７ａを閉回路状に配置した磁場発生。17 is a magnetic field generator in which magnets 17a are arranged in a closed circuit.
器、１８は磁場発生器１７を陽極１６と平行に移動させ
る移動機構を示している。また、２１は容器１１内に所
定のガスを導入するためのガス導入口、２２は陽極１１
内のガスを排気するガス排気口、２３はガス導入口２１
から導入されたガスを被処理基体１３に均一に吹付ける
ためのメ・ツシュ、２４．２５はそれぞれ絶縁体を示し
ている。18 indicates a moving mechanism for moving the magnetic field generator 17 in parallel with the anode 16. Further, 21 is a gas introduction port for introducing a predetermined gas into the container 11, and 22 is an anode 11.
23 is a gas inlet port 21 for exhausting the gas inside.
24 and 25 each represent an insulator for uniformly spraying the gas introduced from the substrate 13 onto the substrate 13 to be processed.
この装置では、陰極１２の表面上に形成されたシースを
横切る電場と磁場発生器１７の形成する磁場とが直交す
る領域で電子がサイクロイド運動し、密なプラズマが形
成される。そして、このプラズマ中のイオンにより被処
理基体１・３が高速でエツチングされる。また、磁場発
生器１７を移動させているので、プラズマを均一に形成
することができ、被処理基体１３を均一にエツチングす
ることができる。In this device, electrons move cycloidally in a region where the electric field crossing the sheath formed on the surface of the cathode 12 and the magnetic field formed by the magnetic field generator 17 are perpendicular to each other, forming a dense plasma. The substrates 1 and 3 to be processed are etched at high speed by the ions in this plasma. Further, since the magnetic field generator 17 is moved, plasma can be uniformly formed, and the substrate 13 to be processed can be uniformly etched.
次に、上記装置を用いたキャパシタ用ゲート電極形成工
程について説明する。Next, a process for forming a gate electrode for a capacitor using the above-mentioned apparatus will be explained.
まず、第２図（ａ）に示す如く、面方位（１００）のｐ
型Ｓｔ基板３１を熱酸化して、基板３１上に厚さ １２
０［人］のゲート酸化膜３２を形成し、続いてＳｉＨ４
を用いたＬＰＣＶＤ法により厚さ４０００ ［人コの多
結晶Ｓ１膜３３を堆積した。さらに、Ｐ ＯＣ’ Ｊ
ｓと０２との混合ガス雰囲気下で、Ｐを多結晶Ｓｉ内に
拡散した後、希弗酸中に浸漬して、リン拡散中に生成し
た酸化膜を除去する。First, as shown in Figure 2(a), p of the plane orientation (100)
The type St substrate 31 is thermally oxidized to have a thickness of 12 mm on the substrate 31.
0 [person] gate oxide film 32 is formed, and then SiH4
A polycrystalline S1 film 33 with a thickness of 4,000 mm was deposited by the LPCVD method using . Furthermore, P OC' J
After P is diffused into polycrystalline Si in a mixed gas atmosphere of s and 02, the oxide film generated during phosphorus diffusion is removed by immersion in dilute hydrofluoric acid.
その後、ポジ型ホトレジスト３→を用いてキャパシタの
パターンを形成する。Thereafter, a capacitor pattern is formed using a positive photoresist 3→.
この試料を前記第１図に示す装置の容器１１内に入れ、
塩素ガス（Ｃ，ｔ’２ ）を用いてエツチングを行う。Put this sample into the container 11 of the apparatus shown in FIG. 1,
Etching is performed using chlorine gas (C, t'2).
即ち、第２図（ｂ）に示す如く、レジスト３４をマスク
として多結晶Ｓｉ膜３３の選択エツチングを行い、その
後レジスト３４を除去する。That is, as shown in FIG. 2(b), the polycrystalline Si film 33 is selectively etched using the resist 34 as a mask, and then the resist 34 is removed.
ここで、上記エツチングを行う際に、陰極表面での磁場
強度を種々変化させた。この磁場強度の変更には、電極
間距離、磁極間距離、或いは陽極１６と磁場発生器１７
との距離等を適宜変化させればよい。その後、基板３１
の表面上全面にレジストを塗布し、基板３１の裏面側の
多結晶Ｓｉと酸化膜を順次除去し、さらに０２プラズマ
灰化によりレジストを除去した後、ＤＣテスタを用いて
ゲート酸化膜３２の耐圧を測定した。Here, when performing the above etching, the magnetic field strength on the cathode surface was varied. This magnetic field strength can be changed by changing the distance between the electrodes, the distance between the magnetic poles, or the anode 16 and the magnetic field generator 17.
What is necessary is just to change the distance etc. to suitably. After that, the board 31
After applying a resist to the entire surface of the substrate 31 and sequentially removing the polycrystalline Si and oxide film on the back side of the substrate 31 and removing the resist by 02 plasma ashing, the withstand voltage of the gate oxide film 32 was tested using a DC tester. was measured.
第３図に、陰極表面での磁場強度が１２０［Ｇ］の時の
耐圧分布を示す。ウェハの周辺部に一部キャパシタので
きていない領域があって、１ ［ＭＶ／ｎ１以下の電界
で破壊するキャベシタがいくつかあるが、その他はいず
れも正常な耐圧８ ［ＭＶ／α］以上を示している。即
ち、１２０［Ｇ］の磁場強度では、前述した電位差によ
るゲート酸化膜の絶縁破壊は認められない。また、この
ときの５インチウェハ内での電圧分布は第４図に示す如
＜ ３０［Ｖ］と小さいものとなっている。FIG. 3 shows the breakdown voltage distribution when the magnetic field strength on the cathode surface is 120 [G]. There are some areas around the wafer where no capacitors are formed, and there are some capacitors that are destroyed by an electric field of 1 [MV/n1 or less, but all others have a normal breakdown voltage of 8 [MV/α] or more. It shows. That is, at a magnetic field strength of 120 [G], the dielectric breakdown of the gate oxide film due to the aforementioned potential difference is not observed. Further, the voltage distribution within the 5-inch wafer at this time is as small as <30 [V] as shown in FIG.
第５図は、陰極表面での磁場強度が４３０［Ｇ］の場合
の結果である。この図から、明らかに、１［ＭＶ／ｃＩ
Ｉ］以下の電界で破壊するキャパシタ数が増大している
のが判る。これは、前述した電位差により電流が流れ、
ゲート酸化膜の絶縁破壊が生じたからであると考えられ
る。また、このときの５インチウェハ内での電圧分布は
第６図に示す如＜ ７０［Ｖ］ と大きくなっている。FIG. 5 shows the results when the magnetic field strength at the cathode surface was 430 [G]. From this figure, it is clear that 1[MV/cI
It can be seen that the number of capacitors destroyed by electric fields below I] is increasing. This is because current flows due to the potential difference mentioned above,
This is thought to be due to dielectric breakdown of the gate oxide film. Further, the voltage distribution within the 5-inch wafer at this time is as large as <70 [V] as shown in FIG.
第７図は１［ＭＶ／ＣＴ１１］以下の電界で破壊するキ
ャパシタ数を陰極表面の磁場強度に対してプロットした
図であり、４００［Ｇ］以下では破壊するキャパシタ数
は極めて少なく略一定であるが、４００［Ｇ］を越える
メ破壊するキャパシタ数が急激に増大する傾向があるこ
とが判る。従って、陰極の表面近傍における磁場強度を
４００［：Ｃ１以下に抑えておく限り、ゲート酸化膜の
破壊は極めて少ないものとなる。Figure 7 is a diagram plotting the number of capacitors destroyed by an electric field of 1 [MV/CT11] or less against the magnetic field strength on the cathode surface, and the number of capacitors destroyed by an electric field of 1 [MV/CT11] or less is extremely small and almost constant at 400 [G] or less. However, it can be seen that there is a tendency for the number of capacitors destroyed to increase rapidly when the force exceeds 400 [G]. Therefore, as long as the magnetic field strength near the surface of the cathode is kept below 400[:C1], destruction of the gate oxide film will be extremely rare.
なお、上記の結果はゲート酸化膜の膜厚を変えても、正
常な耐圧が変わるのみで、１ ［ＭＶ／α］以下の電界
で破壊するキャパシタ数の関係は第７図と略同様であっ
た。また、第３図、第５図及び第７図における測定個数
は共に２００個とした。Note that even if the thickness of the gate oxide film is changed, the above result only changes the normal withstand voltage, and the relationship between the number of capacitors destroyed by an electric field of 1 [MV/α] or less is almost the same as shown in Figure 7. Ta. Furthermore, the number of measurements in FIGS. 3, 5, and 7 was 200.
このように本実施例方法によれば、陰極１２の表面近傍
における磁場の強さを４００［Ｇ］以下に設定すること
により、ゲート酸化膜３２の破壊を確実に防止すること
ができ、キャパシタ用ゲート電極形成のためのドライエ
ツチング法として極めて有効である。また、磁場の印加
により、放電電圧を低下させイオンのエネルギーを低く
しているので、イオン衝撃による損傷を小さくすること
ができる。さらに、磁場発生器１７を陽極側に設置して
いるので、直交パターンの形状が異なる等の不都合を防
止することも可能である。As described above, according to the method of this embodiment, by setting the strength of the magnetic field near the surface of the cathode 12 to 400 [G] or less, destruction of the gate oxide film 32 can be reliably prevented. This is extremely effective as a dry etching method for forming gate electrodes. Furthermore, by applying a magnetic field, the discharge voltage is lowered and the energy of the ions is lowered, so damage caused by ion bombardment can be reduced. Furthermore, since the magnetic field generator 17 is installed on the anode side, it is also possible to prevent problems such as different shapes of orthogonal patterns.
なお、本発明は上述した実施例方法に限定されるもので
はない。例えば、前記エツチングする材料は不純物を添
加した多結晶シリコンに限定されるものではなく、多結
晶シリコン、単結晶シリコン等の半導体、Ａノ、Ｍｏ、
Ｗ、Ｔ ｉ等の金属、ＭｏＳｉ２．ＷＳｉ２．ＴｉＳｉ
等の金属シリサイド、更には不純物を添加した酸化シリ
コンや窒化シリコン等であってもよい。また、容器内に
導入するガスの種類やガス圧等の条件は、エツチングす
る材料に応じて適宜変更可能である。Note that the present invention is not limited to the method of the embodiment described above. For example, the material to be etched is not limited to polycrystalline silicon doped with impurities, but includes semiconductors such as polycrystalline silicon and single crystal silicon, A, Mo,
Metals such as W, Ti, MoSi2. WSi2. TiSi
It may also be metal silicide such as silicon oxide or silicon nitride to which impurities are added. Further, conditions such as the type of gas introduced into the container and the gas pressure can be changed as appropriate depending on the material to be etched.
また、本発明方法に使用する装置は第１図に同等限定さ
れるものではなく、仕様に応じて適宜変更可能である。Further, the apparatus used in the method of the present invention is not limited to the same as shown in FIG. 1, but can be modified as appropriate according to specifications.
例えば、前記磁場発生器としてリニアモータの固定子を
用いることができる。さらに、各電極間の間隔は１０〜
１００ ［Ｍ］の範囲で適宜窓めればよい。その他、
本発明の要旨を逸脱しない範囲で、種々変形して実施す
ることができる。For example, a stator of a linear motor can be used as the magnetic field generator. Furthermore, the spacing between each electrode is 10~
It is only necessary to window it appropriately within the range of 100 [M]. others,
Various modifications can be made without departing from the spirit of the invention.
［発明の効果］
以上詳述したように本発明によれば、マグネトロン放電
を利用したドライエツチングにおいて、陰極表面におけ
る磁場の強さを４００［Ｇ］以下に抑えておくことによ
り、ゲート酸化膜の破壊等を確実に防止することができ
る。従って、ゲート電極形成のためのエツチングに有効
であり、各種の素子形成工程に適用することができる。[Effects of the Invention] As detailed above, according to the present invention, in dry etching using magnetron discharge, the strength of the magnetic field on the cathode surface is suppressed to 400 [G] or less, thereby reducing the thickness of the gate oxide film. Destruction, etc. can be reliably prevented. Therefore, it is effective in etching for forming gate electrodes, and can be applied to various device forming processes.
第１図は本発明の一実施例方法に使用したドライエツチ
ング装置を示す概略構成図、第２図は上記装置を用いた
キャパシタ用ゲート電極形成工程を示す断面図、第３図
は磁場強度１２０［Ｇ］のときの電界に対するゲート酸
化膜の破壊個数を示す特性図、第４図は磁場強度１２０
［Ｇ］のときの電位分布を示す特性図、第５図は磁場強
度４３０［Ｇ］のときの電界に対するゲート酸化膜の破
壊個数を示す特性図、第６図は磁場強度４３０［Ｇ］の
ときの電位分布を示す特性図、第７図は磁場の強さに対
するゲート酸化膜の破壊個数を示す特性図、第８図は磁
石上の磁場分布を示す模式図である。
１１・・・真空容器、１２・・・陰極（第１の電極）、
１３・・・ウェハ（被処理基体）、１５・・・高周波電
源、１６・・・陽極（第２の電極）、１７・・・磁場発
生器、３１・・・Ｓｔ基板、３２・・・ゲート酸化膜、
３３・・・多結晶Ｓｔ膜、３４・・・レジスト。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
電界（ＭＶ／ｃｍ） −
第３図
第５図
電界（ＭＶ／ｃｍ ） −
第７図
石ｎＩ＆（力゛つス ）−FIG. 1 is a schematic configuration diagram showing a dry etching device used in a method according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a step of forming a gate electrode for a capacitor using the above device, and FIG. 3 is a diagram showing a magnetic field strength of 120 Figure 4 is a characteristic diagram showing the number of breakdowns of the gate oxide film against the electric field when [G] is applied, and the magnetic field strength is 120.
Figure 5 is a characteristic diagram showing the potential distribution when the magnetic field strength is 430 [G]. Figure 6 is a characteristic diagram showing the number of breakdowns of the gate oxide film in response to the electric field when the magnetic field strength is 430 [G]. FIG. 7 is a characteristic diagram showing the number of broken gate oxide films with respect to the strength of the magnetic field, and FIG. 8 is a schematic diagram showing the magnetic field distribution on the magnet. 11... Vacuum container, 12... Cathode (first electrode),
13... Wafer (substrate to be processed), 15... High frequency power supply, 16... Anode (second electrode), 17... Magnetic field generator, 31... St substrate, 32... Gate Oxide film,
33... Polycrystalline St film, 34... Resist. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Electric field (MV/cm) - Figure 3 Figure 5 Electric field (MV/cm) - Figure 7 Stone nI & (force) -
Claims (8)
に対向配置される第２の電極を備えた容器と、この容器
内に所定のガスを供給する手段と、上記容器内のガスを
排気する手段と、前記第１及び第２の電極間に高周波電
力を印加する手段と、前記第２の電極の前記第１の電極
に対向する側と反対側に配置され前記各電極間に磁界を
印加する磁界印加手段とを具備したドライエッチング装
置を用い、表面にエッチングマスクが形成された被処理
基体をエッチングするに際し、前記第１の電極の表面近
傍における磁界強度を４００ガウス以下に設定したこと
を特徴とするドライエッチング方法。(1) A container equipped with a first electrode on which a substrate to be processed is placed and a second electrode arranged opposite to this electrode, means for supplying a predetermined gas into the container, and a means for exhausting gas; a means for applying high frequency power between the first and second electrodes; and a means for applying high frequency power between the first and second electrodes; When etching a substrate to be processed having an etching mask formed on its surface using a dry etching apparatus equipped with a magnetic field applying means for applying a magnetic field, the magnetic field strength near the surface of the first electrode is set to 400 Gauss or less. A dry etching method characterized by:
を持って配列された棒状若しくは閉ループ状の磁極間隙
を有する永久磁石からなり、該磁石は前記第２の電極の
主面に沿って移動されることを特徴とする特許請求の範
囲第１項記載のドライエッチング方法。(2) The magnetic field applying means includes a permanent magnet having a bar-shaped or closed-loop magnetic pole gap in which N poles and S poles are arranged alternately with gaps, and the magnet is arranged on the main surface of the second electrode. 2. The dry etching method according to claim 1, wherein the dry etching method is moved along the following lines.
なることを特徴とする特許請求の範囲第１項記載のドラ
イエッチング方法。(3) The dry etching method according to claim 1, wherein the magnetic field applying means comprises a stator of a linear motor.
０［ｍｍ］に設定したことを特徴とする特許請求の範囲
第１項記載のドライエッチング方法。(4) The distance between the first and second electrodes is 10 to 10
The dry etching method according to claim 1, wherein the dry etching method is set to 0 [mm].
処理基体の表面に均一にガスを吹き付けることを特徴と
する特許請求の範囲第１項記載のドライエッチング方法
。(5) The dry etching method according to claim 1, wherein the means for supplying gas into the container includes spraying gas uniformly onto the surface of the substrate to be processed.
いたことを特徴とする特許請求の範囲第１項記載のドラ
イエッチング方法。(6) The dry etching method according to claim 1, wherein Cl_2 is used as the gas supplied into the container.
スであることを特徴とする特許請求の範囲第１項記載の
ドライエッチング方法。(7) The dry etching method according to claim 1, wherein the gas is a mixed gas of an etching gas and a deposition gas.
含む反応性ガスと炭素と水素或いは炭素とハロゲン元素
を含むガスとの混合ガスであることを特徴とする特許請
求の範囲第１項記載のドライエッチング方法。(8) The gas supplied into the container is a mixed gas of a reactive gas containing a halogen element, carbon and hydrogen, or a gas containing carbon and a halogen element. Dry etching method described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7212887A JPS63237530A (en) | 1987-03-26 | 1987-03-26 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7212887A JPS63237530A (en) | 1987-03-26 | 1987-03-26 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63237530A true JPS63237530A (en) | 1988-10-04 |
Family
ID=13480362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7212887A Pending JPS63237530A (en) | 1987-03-26 | 1987-03-26 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63237530A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182829A (en) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | Dry etching device |
| JPS6046029A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Equipment for manufacturing semiconductor |
| JPS6077427A (en) * | 1983-10-04 | 1985-05-02 | Seiko Epson Corp | Dry etching device |
| JPS60173838A (en) * | 1984-02-20 | 1985-09-07 | Toshiba Corp | Dry etching device |
| JPS61255027A (en) * | 1985-05-07 | 1986-11-12 | Toshiba Corp | Dryetching process |
-
1987
- 1987-03-26 JP JP7212887A patent/JPS63237530A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182829A (en) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | Dry etching device |
| JPS6046029A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Equipment for manufacturing semiconductor |
| JPS6077427A (en) * | 1983-10-04 | 1985-05-02 | Seiko Epson Corp | Dry etching device |
| JPS60173838A (en) * | 1984-02-20 | 1985-09-07 | Toshiba Corp | Dry etching device |
| JPS61255027A (en) * | 1985-05-07 | 1986-11-12 | Toshiba Corp | Dryetching process |
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