JPS63227784A - Method for providing electroless plating catalyst - Google Patents
Method for providing electroless plating catalystInfo
- Publication number
- JPS63227784A JPS63227784A JP6227587A JP6227587A JPS63227784A JP S63227784 A JPS63227784 A JP S63227784A JP 6227587 A JP6227587 A JP 6227587A JP 6227587 A JP6227587 A JP 6227587A JP S63227784 A JPS63227784 A JP S63227784A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- acid
- coupling agent
- transition metal
- silane coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 31
- 238000007772 electroless plating Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 16
- 230000009467 reduction Effects 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000013522 chelant Substances 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 11
- 125000000524 functional group Chemical group 0.000 claims abstract description 9
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 8
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 229910001428 transition metal ion Inorganic materials 0.000 claims abstract description 6
- 150000003624 transition metals Chemical class 0.000 claims abstract description 6
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000003638 chemical reducing agent Substances 0.000 abstract description 3
- -1 hydridoborates Chemical compound 0.000 abstract description 3
- 150000007513 acids Chemical class 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 14
- 238000007747 plating Methods 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 238000006722 reduction reaction Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000003446 ligand Substances 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 235000014121 butter Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 150000003840 hydrochlorides Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000028327 secretion Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
- C23C18/1865—Heat
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
Description
【発明の詳細な説明】
（ｍｉ上の利用分野）
本発明は、セラミック、ガラス等の電気的に絶縁性の基
材表面に無電解めっきを施すときの、無電解めっき触媒
の付与方法に閃する。Detailed Description of the Invention (Field of application on mi) The present invention is an innovative method for applying an electroless plating catalyst when electroless plating is applied to the surface of an electrically insulating substrate such as ceramic or glass. do.
（従来の技術）
現在用いられている無電解めっきのための触媒付与方法
は、もともとプラスチック等のを機基材に対して口）１
発されたものであり、その付与ｎ構についてもこれら基
材の表面性質に対応して考えられたものであった。すな
わち、本来疎水性である基材表面を予め界面活性剤処理
で収水性にし、さらに用いた界面活性剤の極性を利用し
て対極性をもつ触媒物質を静電的引力で基材表面に吸打
させるというものである。界面活性剤として、末端アミ
７基を持つカチオン系界面活性剤で表面処理した後に負
に帯電したパラジウム系コロイド触媒液させる方法は、
今日最も一般的な方法として知られている（米国特許ｆ
ｌｌ’！４，１８７，１９８号公報、米国特許第３．ａ
ｅｉ、１０９号公報など）。(Prior art) The currently used catalyst application method for electroless plating was originally applied to a base material such as plastic (1).
The structure in which it is applied was also considered in accordance with the surface properties of these base materials. In other words, the surface of the base material, which is originally hydrophobic, is treated with a surfactant in advance to make it water-absorbing, and then the polarity of the surfactant used is used to absorb a catalyst substance with an opposite polarity onto the surface of the base material using electrostatic attraction. It's about having them hit. The method of treating the surface with a cationic surfactant having 7 terminal amino groups as a surfactant and then using a negatively charged palladium-based colloidal catalyst solution is as follows:
It is known as the most common method today (U.S. Patent f
ll'! No. 4,187,198, U.S. Patent No. 3. a
ei, Publication No. 109, etc.).
シラン系カップリング剤は、無機物、特に酸化物表面を
被覆し、その表面に末端官能基的性質を付与するために
用いられてきた。Silane coupling agents have been used to coat inorganic, especially oxide, surfaces and impart terminal functional properties to the surfaces.
特公昭５９−５２７０１号公報では、予め末端にパラジ
ウムに配置し易い官能基を有する７ラン系カツプリング
剤で表面処理した後にパラジウムを含仔する市販コロイ
ド系触媒液で処理することにより表面平滑なガラスにさ
え容易に￥Ｍｅの良い無電解めっき皮膜を生成可能であ
ることがのべられている。In Japanese Patent Publication No. 59-52701, a glass with a smooth surface is prepared by first treating the surface with a 7-ran coupling agent having a functional group that can be easily attached to palladium at the end, and then treating it with a commercially available colloidal catalyst solution containing palladium. It is stated that it is possible to easily produce an electroless plating film with good ¥Me.
特開昭００−３８６６９号公報では、末端にアミ７基、
イミノ基をイｉ Ｌ 、かつ、分子ｔａ造中に２価のパ
ラジウム等を金属パラジウム等に還元する基を存するシ
ランを用いる方法が示されている。In JP-A No. 00-38669, 7 amino groups at the terminal,
A method using a silane having an imino group i L and a group capable of reducing divalent palladium or the like to metal palladium or the like during the formation of the molecule is disclosed.
（発明が解決しようとする問題点）
これらの方法をセラミックスやガラス基材に適用しよう
とすれば、米国特許第４，１８７，１０８号公報、米国
特許第３，９６１，１０９号公報に記αの方法では、本
来セラミックスやガラス基材表面は親水性であるため界
面活性剤処理は貞味を成さず、却って後工程に用いるコ
ロイド触媒液の凝集や沈殿生成をひきおこす。また、こ
れらの方法では、基材表面に触媒金屑を固定化させてい
る力は、単に静電的引力のみであり後処理液に含まれる
対電荷イオンの種や濃度、ｐ■■の変化により吸着力を
失い、表面から脱離してしまい、酷い場合には無電解め
っき浴中を漂い浴の安定性を低下させてしまう原因とな
る。(Problems to be Solved by the Invention) If these methods are to be applied to ceramic or glass substrates, the problems described in U.S. Pat. No. 4,187,108 and U.S. Pat. No. 3,961,109 are In this method, since the surface of the ceramic or glass substrate is originally hydrophilic, the surfactant treatment is not effective, and instead causes aggregation and precipitation of the colloidal catalyst liquid used in the subsequent process. In addition, in these methods, the force that immobilizes the catalyst gold scraps on the surface of the substrate is simply electrostatic attraction, and changes in the species, concentration, and p■■ of countercharged ions contained in the post-treatment liquid As a result, the adsorbent loses its adsorption power and detaches from the surface, and in severe cases, it floats in the electroless plating bath, causing a decrease in the stability of the bath.
特公昭５９−５２７０１号公報に示された方法では基材
をシラン系カップリング剤水溶液に浸漬後、直ちに水洗
を行いコロイド触媒液に導入する方法がとられている。In the method disclosed in Japanese Patent Publication No. 59-52701, a substrate is immersed in an aqueous solution of a silane coupling agent, immediately washed with water, and then introduced into a colloidal catalyst solution.
シラン系カップリング剤と酸化物表面の水酸基との反応
は加熱処理なしでは進行せず、この場合水洗時にほとん
どのシラン系カップリング剤は洗い流され、本質的には
界面活性剤処理を行っていることと差異はない可能性が
ある。また、基材表面を被覆するシラン系カップリング
材とコロイド触媒液により生成する金属パラジウムとの
間には、量的な関係はなく、むしろ過剰量の金属パラジ
ウムの吸行をまねく可能性さえある。The reaction between the silane coupling agent and the hydroxyl groups on the oxide surface does not proceed without heat treatment, and in this case, most of the silane coupling agent is washed away during water washing, essentially performing a surfactant treatment. There may be no difference. Furthermore, there is no quantitative relationship between the silane-based coupling material that coats the surface of the substrate and the metal palladium produced by the colloidal catalyst liquid, and there is a possibility that an excessive amount of metal palladium may be absorbed. .
（問題点を解決するための手段）
本発明者らは、このような従来技術の問題を解決するた
めに説な研究を重ねた結果、シラン系カップリング剤と
遷移金属イオンとの錯体またはキレート溶液を用いてセ
ラミックスおよびガラス表面に、遷移金属イオンのシラ
ン系カップリング剤鋳体またはキレートを導入した後、
熱処理を行い、さらに還元剤処理を行うことにより解決
されることを見出した。(Means for Solving the Problems) As a result of extensive research in order to solve the problems of the prior art, the present inventors have developed a complex or chelate between a silane coupling agent and a transition metal ion. After introducing silane-based coupling agent castings or chelates of transition metal ions onto ceramic and glass surfaces using a solution,
It has been found that the problem can be solved by heat treatment and further treatment with a reducing agent.
すなわち本発明は、シラン系カップリング剤と遷移金属
イオンとのＳＮ体および／またはキレートを含む溶液を
、絶縁性の基材表面に付与し、熱処理を行い、さらに還
元処理を施すことにより、絶縁性の基材表面に触媒を付
与することを特徴とする、無電解めっき触媒の付与方法
である。That is, the present invention provides insulation by applying a solution containing an SN form and/or chelate of a silane coupling agent and a transition metal ion to the surface of an insulating base material, heat treatment, and further reduction treatment. This is a method for applying a catalyst for electroless plating, which is characterized by applying a catalyst to the surface of a solid base material.
本発明における絶縁性基材は、ガラス、セラミック、無
機の電気絶縁体、有機の電気絶縁体等であるが、本発明
の好ましい適用は、ガラス、またはセラミックの基材に
対してなされる。Insulating substrates in the present invention include glass, ceramics, inorganic electrical insulators, organic electrical insulators, etc., but the present invention is preferably applied to glass or ceramic substrates.
本発明におけるシラン系カップリング剤は従来公知のシ
ランカブプリング剤のうち、遷移金属とキレートを形成
しうる官能基、または遷移金属に対しての配位子を分子
内に仔するシラン系カップリング剤であればよいが、好
ましくは、一般式Ｘ、Ｓｉ （ＣＨ，）ｎＹ −−
−（Ｓ）〔ただし、Ｘ：ハロゲン元素またはＣＩ〜Ｃ６
で表わされる炭素数が１から６個までのアルコキシｕ、
ｎはｎ≧１で示される数。Ｙは、′ｅｉ索原子を１個以
上含む直鎖または環状の配位子またはキレートを形成し
得る官能基、硫黄原子を１個以上含む直鎖または環状の
配位子またはキレートを形成し得る官能基、酸素原子を
１個以上含む直鎖または環状の配位子並びにキレートを
形成し得る官能基、燐原子を１個以上含む直鎖または環
状の配位子並びにキレートを形成し得る官能基、および
これらの特徴を併せ持つ直鎖または環状の配位子または
キレートを形成し得る官能基。を表わす〕で表されるシ
ラン系カップリング剤である。The silane coupling agent in the present invention is a silane coupling agent that has a functional group capable of forming a chelate with a transition metal or a ligand for a transition metal in the molecule, among conventionally known silane coupling agents. Preferably, the general formula X, Si (CH,)nY --
-(S) [However, X: halogen element or CI to C6
Alkoxy u having 1 to 6 carbon atoms, represented by
n is a number represented by n≧1. Y is a functional group capable of forming a linear or cyclic ligand or chelate containing one or more ``ei group atoms, or a linear or cyclic ligand containing one or more sulfur atoms or capable of forming a chelate. A functional group, a linear or cyclic ligand containing one or more oxygen atoms, and a functional group capable of forming a chelate, a linear or cyclic ligand containing one or more phosphorus atoms, and a functional group capable of forming a chelate. , and functional groups that can form linear or cyclic ligands or chelates that have these characteristics. This is a silane coupling agent represented by
本発明に用いる遷位金届とは、ｌｎ族元素、第５周期と
第６周期の８族元素およびコバルト、二フケルをいう。The transition metal notification used in the present invention refers to ln group elements, 8th group elements in the 5th and 6th periods, cobalt, and difluoride.
塩としては、その塩酸塩、硫酸塩、硝酸塩、過塩素酸塩
などやさらに錯化合物などがある。Examples of salts include hydrochlorides, sulfates, nitrates, perchlorates, and complex compounds.
本発明の還元処理とは、液相、気相、同相あるいはこれ
らより成る多相系において本発明のシラン系カブプリン
グ剤を配位子とする遷移金ｒｙ４１ｉｔ体またはキレー
トの還元可能な処理をいい、具体的には液相系における
還元剤処理、光還元反応あるいは、気体による還元など
をいう。The reduction treatment of the present invention refers to a reducible treatment of a transition gold ry41it body or chelate using the silane-based coupling agent of the present invention as a ligand in a liquid phase, a gas phase, the same phase, or a multiphase system consisting of these, Specifically, it refers to treatment with a reducing agent in a liquid phase system, photoreduction reaction, or reduction by gas.
本発明の還元処理において、ヒドリドホウ酸、ヒドリド
ホウ酸塩、ヒドリドホウ酸誘導体、アルキルホウ酸、ア
ルキルホウ酸塩、アルキルホウ酸誘導体、次亜リン酸、
次亜リン酸塩、次亜リン酸誘導体の化合物群から選ばれ
た１！ｌまたは２種以上によって、なされる還元処理が
好ましい。In the reduction treatment of the present invention, hydridoboric acid, hydridoboric acid salts, hydridoboric acid derivatives, alkylboric acids, alkylborates, alkylboric acid derivatives, hypophosphorous acid,
1 selected from the compound group of hypophosphite and hypophosphorous acid derivatives! Preferably, the reduction treatment is performed using one or more of the following.
本発明のセラミックスとしては、酸化物系、非酸化物系
であるかを問わない。代表例を挙げれば、アルミナ、珪
酸塩、ベリリア、チタン酸塩、ジルコニア、マグネシア
、カルシア、炭化珪素、窒化アルミニウムあるいはこれ
らの混合物などである。シラン系カップリング剤の末端
シラン基の珪素との間にシリルエーテル結合を生成させ
るためには、表面酸化届が吸行酸索の単ぶ子府ですら可
能であり、本方法は鉄系、アルミニウム系などの金属、
さらには有機物層を最外層にもつ基材にも適用可能であ
る。The ceramics of the present invention may be oxide-based or non-oxide-based. Typical examples include alumina, silicates, beryllia, titanates, zirconia, magnesia, calcia, silicon carbide, aluminum nitride, or mixtures thereof. In order to generate a silyl ether bond between the terminal silane group of the silane coupling agent and the silicon, surface oxidation is possible even with a single base of the suction acid cable, and this method is suitable for iron-based, Metals such as aluminum,
Furthermore, it is also applicable to base materials having an organic layer as the outermost layer.
本発明のガラスとしては、硅素、燐、硼素、ゲルマニウ
ム、砒素、アンチモン、ビスマス、／＜ナジウムなどの
イオンを網目主成分として、アルカリ金属イオン、アル
カリ土類金属イオン、亜鉛、カドミウム、鉛、アルミニ
ウムなどを修飾イオンとするものを挙げることができる
。The glass of the present invention includes ions such as silicon, phosphorus, boron, germanium, arsenic, antimony, bismuth, and/or sodium as the main component of the network, and alkali metal ions, alkaline earth metal ions, zinc, cadmium, lead, and aluminum. Examples include those with modified ions such as
本発明をさらに詳細に説明するために以下に実施例をあ
げるが、本発明はこれら実施例に何ら限定されるもので
はない。Examples will be given below to explain the present invention in more detail, but the present invention is not limited to these Examples in any way.
〔実施例１〕
触媒化液（＾）および還元処理液（１）として下記の組
成のものを調整した。[Example 1] A catalytic solution (^) and a reduction treatment solution (1) having the following compositions were prepared.
触媒化液（Ａ）：１ ｘ １０−’ ＭＰｄ” 、２ｘ
１０−’ＭＮ−（２−アミノエチル）−３−アミノプ
ロピルトリメトキシシランおよび０ 、１ Ｍ Ｉ−Ｉ
Ｃ（。Catalyzed liquid (A): 1 x 10-'MPd'', 2x
10-'MN-(2-aminoethyl)-3-aminopropyltrimethoxysilane and 0,1M I-I
C(.
還元処理液（Ｂ）：１重量％テトラヒドリドホウ酸ナト
リウムおよび０．５ ｍｍ％水酸化ナトリウム。Reduction treatment solution (B): 1% by weight sodium tetrahydroborate and 0.5 mm% sodium hydroxide.
アルミナを９６％含存する白色セラミック基板を１０ｆ
ｆｆＲ％水准化ナトリウム水溶液中で５分間超音波洗浄
し、水洗後さらに２０容量％の硫酸中に５分間浸漬し、
水洗後風屯した。この基板にドライ書フィルム法により
、腺間腺幅５００μｍのストリップ０ライ／のレジスト
膜（ネガ・パターン）を形成した。このバターニングを
行った基板を０．１Ｍ塩酸水溶液に５分間浸漬した後、
上記触媒化液（＾）に１分間浸漬、風屹し、次いで１２
０℃で１０分間の熱処理を行った。さらに上記還元処理
液（ＩＩ）に２分間浸漬した。次にレジスト膜を５ｉＩ
ｔ量％の水酸化ナトリウム水溶液で！ＩＩ ！！１後水
洗いし無電解銅めっき浴に浸漬した。無電解銅めっき浴
は、０．０４Ｍ−ＣｕＳＯ，，０，０８Ｍ・ＥＤＴＡ・
２Ｎａ１０．００Ｍ−１１ＣＩＩＯおよび０ 、０１
Ｍ −Ｋ ４ （Ｆ ｅ （ＣＮ ）ｏ ）から成る
もので、９１１１２．５、液温２８℃にて約０．６μｍ
の皮膜を得た。形成された銅皮膜のパターンについて目
視観察をおこなった。結果を表１に示す。10f white ceramic substrate containing 96% alumina
Ultrasonic cleaning for 5 minutes in ffR% sodium hydrate aqueous solution, and after washing with water, immersion in 20% by volume sulfuric acid for 5 minutes,
After washing with water, it was air conditioned. A resist film (negative pattern) with a strip width of 500 .mu.m and a strip size of 0 lines/gland was formed on this substrate by a dry writing film method. After immersing the patterned substrate in a 0.1M hydrochloric acid aqueous solution for 5 minutes,
Immerse in the above catalytic solution (^) for 1 minute, air dry, and then
Heat treatment was performed at 0° C. for 10 minutes. Furthermore, it was immersed in the above-mentioned reduction treatment solution (II) for 2 minutes. Next, apply a resist film of 5iI.
With t% sodium hydroxide aqueous solution! II! ! After that, it was washed with water and immersed in an electroless copper plating bath. The electroless copper plating bath was 0.04M-CuSO, 0.08M・EDTA・
2Na10.00M-11CIIO and 0,01
It is composed of M-K 4 (F e (CN) o ), 91112.5, approximately 0.6 μm at a liquid temperature of 28°C.
A film was obtained. The pattern of the formed copper film was visually observed. The results are shown in Table 1.
〔実施例２〕 触媒化液（Ｃ）として下記の組成のものを調整した。[Example 2] A catalytic liquid (C) having the following composition was prepared.
触媒化液（Ｃ）： Ｉ Ｘ １ （Ｉ’ ＭＰ ｄ”お
よび４Ｘ１０’−’Ｍ３−アミノプロピルトリエトキシ
シランおよび０．１ＭＩＣに。Catalyzing Fluid (C): IX1 (I'MP d'' and 4X10'-'M3-aminopropyltriethoxysilane and to 0.1 MIC.
実施例１と同じ手順に従って洗浄、バター／二／グ、酸
処理を行った基板を触媒化液（Ｃ）と還元処理ｍ（Ｂ）
（前出）を用いて実施例１と同じ手順に従って触媒付与
を行い、レジスト剥離後、実施例１に記αの無電解銅め
っき浴に浸漬した。無電解銅めっきは、実施例１！２α
の条件で行い、形成された銅皮膜のパターンについて目
視観察をおこなった。結果を表１に示す。Following the same procedure as in Example 1, the substrate was washed, buttered, treated with acid, and then treated with a catalytic solution (C) and reduced (B).
Catalyst application was carried out according to the same procedure as in Example 1 using (mentioned above), and after the resist was removed, it was immersed in the electroless copper plating bath α described in Example 1. Electroless copper plating is Example 1!2α
The pattern of the formed copper film was visually observed. The results are shown in Table 1.
〔実施例３〕
還元処理液（Ｄ）として下記の組成のものをｆｆ１ａ！
！した。[Example 3] A reduction treatment liquid (D) having the following composition was used as ff1a!
! did.
還元処理液（Ｄ）： ０ 、Ｉ ＭＮ ａ Ｐ Ｉ−１
，０，および０ 、 ｆ Ｍ ＣＨｓ ＣＯＯＮ ａ−
実施例１と同手順に従って洗浄、バターニング、酸処理
を行った基板を触媒化液（＾）と還元処理、＆（Ｄ）を
用いて実施例１と同じ手順に従って触媒付与を行い、レ
ジスト？す離後、実施例１に記αの無電解銅めっき浴に
浸漬した。無電解銅めっきは、実施例１記αの条件で行
い、形成された銅皮膜のパターンについて目視観察をお
こなった。結果を表１に示す。Reduction treatment liquid (D): 0, I MN a PI-1
, 0, and 0, f M CHs COON a-
A substrate that had been cleaned, buttered, and acid-treated according to the same procedure as in Example 1 was subjected to reduction treatment with a catalytic solution (^), and a catalyst was applied using & (D) according to the same procedure as in Example 1, and resist? After separation, it was immersed in the electroless copper plating bath α described in Example 1. Electroless copper plating was performed under the conditions α in Example 1, and the pattern of the formed copper film was visually observed. The results are shown in Table 1.
〔実施例４〕
表面粗度の非常に小さいガラス製プレパラート（Ｒａ＝
０．００５、Ｎａｔｓｕｎａｍｉ ｇｌａｓｓ Ｃｏｒ
ｐ、製１Ｓｌｌｌｌ）を水洗後、実施例１と同じ手順に
従ってバターニング、酸処理を行ない、触媒化液（八）
と還元処理液（Ｂ）を用いて実施例１と同じ手順に従っ
て触媒付与を行い、レジスト？す離後、実施例１に記載
の無電解銅めっき浴に浸漬した。無電解銅めっきは、実
施例１記αの条件で行い、形成された銅皮膜のパターン
について目視観察をおこなった。結果を表１に示す。[Example 4] Glass preparation with very small surface roughness (Ra=
0.005, Natsunami glass Cor
After washing with water, buttering and acid treatment were carried out according to the same procedure as in Example 1, and catalytic liquid (8) was obtained.
Catalyst application was carried out according to the same procedure as in Example 1 using the reduction treatment liquid (B) and the resist? After separation, it was immersed in the electroless copper plating bath described in Example 1. Electroless copper plating was performed under the conditions α in Example 1, and the pattern of the formed copper film was visually observed. The results are shown in Table 1.
〔比較例１〕
実施例１と同じセラミック基板を用いて、実施例１と同
一の手順に従って洗浄、バターニングを行った。この基
板を市販の無電解めっき用の触媒化薬品を用いて増感処
理し、レジスト？り離後、ホウ弗化水素酸系の活性化処
理を行い実施例１に記載の無電解銅めっき浴に浸漬した
。市販の無１［を解鍍金用の触媒化薬品として、〔日立
化成工業■〕製のコンディショナー：Ｃ０ＮＤ−２０１
、増感剤：ｌｌＳ−１０１Ｂおよび密行促進剤：ＡＤｒ
’−２０１を用い、カタログ記αの条件で前処理を行っ
た。無電解銅めっきは、実施例１に記αの条件で行い、
形成された銅皮膜のパターンについて目視観察をおこな
った。結果を表１に示す。[Comparative Example 1] Using the same ceramic substrate as in Example 1, cleaning and buttering were performed according to the same procedure as in Example 1. This substrate is sensitized using a commercially available catalytic chemical for electroless plating, and resist is formed. After separation, it was subjected to a borofluoric acid-based activation treatment and immersed in the electroless copper plating bath described in Example 1. Conditioner manufactured by Hitachi Chemical Co., Ltd.: C0ND-201 was used as a catalytic agent for deplating.
, sensitizer: llS-101B and secretion promoter: ADr
Pretreatment was performed using '-201 under the conditions listed in the catalog α. Electroless copper plating was performed under the conditions α described in Example 1,
The pattern of the formed copper film was visually observed. The results are shown in Table 1.
〔比較例２〕
実施例４と同じガラス製プレパラートを水洗後バターニ
ングを行った。比較例１に記αしたと同じ手順で触媒化
を行い、実施例１記載の無電解銅めっき浴に浸漬した。[Comparative Example 2] The same glass preparation as in Example 4 was washed with water and then buttered. Catalyticization was performed in the same procedure as described in Comparative Example 1, and the sample was immersed in the electroless copper plating bath described in Example 1.
無電解銅めっきは、実施例１に記載の条件で行い、形成
された銅皮膜の／ｆターフについて目視観察をおこなっ
た。結果を表１に示す。Electroless copper plating was performed under the conditions described in Example 1, and the /f turf of the formed copper film was visually observed. The results are shown in Table 1.
〔比較例３〕
実施例１と同じセラミック基板を用いて、実施例１と同
一の手順に従って洗浄、バターニングを行なった。この
バターニングを行った基板を、実施例１と同一の手順に
従って０．１Ｍｍ酸水溶液に５分間浸漬した後、上記触
媒化液（＾）に１分間浸漬、風位し、次いで１５０℃で
１０分間の熱処理を行った。水洗後、実施例１に記αの
無電解銅めっき浴に浸漬した。無電解めっきは、実施例
１に記αの条件で行い、形成された銅皮膜のパターンに
ついて目視ｔ！察をおこなった。結果を表１に示す。[Comparative Example 3] Using the same ceramic substrate as in Example 1, cleaning and buttering were performed according to the same procedure as in Example 1. The substrate subjected to this buttering was immersed in a 0.1 Mm acid aqueous solution for 5 minutes according to the same procedure as in Example 1, then immersed in the above catalytic solution (^) for 1 minute, air-cooled, and then heated at 150°C for 10 minutes. Heat treatment was performed for 1 minute. After washing with water, it was immersed in the electroless copper plating bath α described in Example 1. Electroless plating was performed under the conditions α described in Example 1, and the pattern of the formed copper film was visually observed at t! I conducted an investigation. The results are shown in Table 1.
以 下 余 白
表 １
ネ） 腺太り
基板にドライフィルム法により形成したレジスト・バタ
ー７の線幅に対して、最終的に無電解銅皮膜より成るパ
ターンの線幅を比較した。Table 1 (Table 1) The line width of the final pattern made of electroless copper film was compared with the line width of Resist Butter 7, which was formed on a thick substrate by the dry film method.
銅ふり
バター７部に付与された触媒が、後処理や無電解めっき
初期に周辺部へ移行した結果として不規則な形状で粗く
薄い銅皮痕がパターン周辺部に拡がるＩＡ象を観察した
。As a result of the catalyst applied to 7 parts of copper sprinkle butter being transferred to the periphery during post-processing and the initial stage of electroless plating, an IA phenomenon was observed in which irregularly shaped, coarse and thin copper skin traces spread around the pattern periphery.
本発明の方法によりセラミックスおよびガラス等の基材
表面に高接社力で触媒金属を付与することが可能となっ
た。本発明の方法は、例えば、セラミック・プリント配
線板、湿式めっき法による磁気ディスク、磁気ヘッド、
半導体デバイスや表示デバイスへの電極形成など多様な
用途に応用することができる。By the method of the present invention, it has become possible to apply catalytic metals to the surfaces of substrates such as ceramics and glass with high contact force. The method of the present invention can be applied to, for example, ceramic printed wiring boards, magnetic disks by wet plating, magnetic heads,
It can be applied to a variety of applications such as forming electrodes in semiconductor devices and display devices.
Claims (4)
体および／またはキレートを含む溶液を、絶縁性の基材
表面に付与し、熱処理を行い、さらに還元処理を施すこ
とにより、絶縁性の基材表面に触媒を付与することを特
徴とする、無電解めっき触媒の付与方法。(1) A solution containing a complex and/or chelate of a silane coupling agent and a transition metal ion is applied to the surface of an insulating base material, heat-treated, and further reduced to form an insulating base material. A method for applying an electroless plating catalyst, which is characterized by applying a catalyst to the surface of a material.
請求の範囲第１項記載の無電解めっき触媒の付与方法。(2) The method for applying an electroless plating catalyst according to claim 1, wherein the insulating base material is glass or ceramic.
される化合物の１種または２種以上である特許請求の範
囲第１項記載の無電解めっき触媒の付与方法。 一般式 Ｘ＿３Ｓｉ（ＣＨ＿２）＿ｎＹ−−−−−〔Ｓ〕 〔ただし、Ｘ：ハロゲン元素またはＣ＿１〜Ｃ＿６のア
ルコキシ基。ｎはｎ≧１で示される数。Ｙは、遷移金属
とキレートを形成しうる官能基、または、遷移金属に配
位結合をしうる機能を有する基。を表す。〕(3) The method for applying an electroless plating catalyst according to claim 1, wherein the silane coupling agent is one or more compounds represented by the following general formula [S]. General formula X_3Si(CH_2)_nY---[S] [However, X: a halogen element or an alkoxy group of C_1 to C_6. n is a number represented by n≧1. Y is a functional group capable of forming a chelate with a transition metal, or a group having a function capable of forming a coordinate bond with a transition metal. represents. ]
または２種以上によってなされる特許請求の範囲第１項
記載の無電解めっき触媒の付与方法。 化合物群 （ヒドリドホウ酸、ヒドリドホウ酸塩、ヒドリドホウ酸
誘導体、アルキルホウ酸、アルキルホウ酸塩、アルキル
ホウ酸誘導体、次亜リン酸、次亜リン酸塩次亜リン酸誘
導体。）−−−〔Ｄ〕(4) The method for applying an electroless plating catalyst according to claim 1, wherein the reduction treatment is performed using one or more selected from the following compound group [D]. Compound group (hydridoboric acid, hydridoboric acid salt, hydridoboric acid derivative, alkylboric acid, alkylborate, alkylboric acid derivative, hypophosphorous acid, hypophosphite hypophosphorous acid derivative)---[D]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6227587A JPS63227784A (en) | 1987-03-16 | 1987-03-16 | Method for providing electroless plating catalyst |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6227587A JPS63227784A (en) | 1987-03-16 | 1987-03-16 | Method for providing electroless plating catalyst |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63227784A true JPS63227784A (en) | 1988-09-22 |
Family
ID=13195429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6227587A Pending JPS63227784A (en) | 1987-03-16 | 1987-03-16 | Method for providing electroless plating catalyst |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63227784A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5616230A (en) * | 1993-05-24 | 1997-04-01 | Okuno Chemical Industries Co., Ltd. | Method for direct-electroplating an electrically nonconductive substrate |
| WO1998011273A1 (en) * | 1996-09-09 | 1998-03-19 | Robert Bosch Gmbh | Substrates seeded with precious metal salts, process for producing the same and their use |
| WO2001049898A1 (en) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Method for metal plating, pre-treating agent, and semiconductor wafer and semiconductor device using the same |
| WO2001081652A1 (en) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Pretreating agent for metal plating |
| JP2002047573A (en) * | 2000-08-01 | 2002-02-15 | Nikko Materials Co Ltd | Pretreatment agent for silver plating and silver plating method |
| WO2004108986A1 (en) * | 2003-06-09 | 2004-12-16 | Nikko Materials Co., Ltd. | Method for electroless plating and metal-plated article |
| US7045461B2 (en) | 2000-01-07 | 2006-05-16 | Nikkon Materials Co., Ltd. | Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these |
| JPWO2008032839A1 (en) * | 2006-09-15 | 2010-01-28 | 宇部日東化成株式会社 | Metal layer-coated substrate and method for producing the same |
| JPWO2010029635A1 (en) * | 2008-09-11 | 2012-02-02 | パイオニア株式会社 | Method for forming metal wiring and electronic component provided with metal wiring |
-
1987
- 1987-03-16 JP JP6227587A patent/JPS63227784A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5616230A (en) * | 1993-05-24 | 1997-04-01 | Okuno Chemical Industries Co., Ltd. | Method for direct-electroplating an electrically nonconductive substrate |
| WO1998011273A1 (en) * | 1996-09-09 | 1998-03-19 | Robert Bosch Gmbh | Substrates seeded with precious metal salts, process for producing the same and their use |
| US6274241B1 (en) | 1996-09-09 | 2001-08-14 | Robert Bosch Gmbh | Substrates seeded with precious metal salts, process for producing the same and their use |
| WO2001049898A1 (en) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Method for metal plating, pre-treating agent, and semiconductor wafer and semiconductor device using the same |
| US7045461B2 (en) | 2000-01-07 | 2006-05-16 | Nikkon Materials Co., Ltd. | Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these |
| WO2001081652A1 (en) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Pretreating agent for metal plating |
| US6780467B2 (en) | 2000-04-25 | 2004-08-24 | Nikko Materials Co., Ltd. | Plating pretreatment agent and metal plating method using the same |
| JP2002047573A (en) * | 2000-08-01 | 2002-02-15 | Nikko Materials Co Ltd | Pretreatment agent for silver plating and silver plating method |
| WO2004108986A1 (en) * | 2003-06-09 | 2004-12-16 | Nikko Materials Co., Ltd. | Method for electroless plating and metal-plated article |
| US8182873B2 (en) | 2003-06-09 | 2012-05-22 | Nippon Mining & Metals Co., Ltd. | Method for electroless plating and metal-plated article |
| JPWO2008032839A1 (en) * | 2006-09-15 | 2010-01-28 | 宇部日東化成株式会社 | Metal layer-coated substrate and method for producing the same |
| JPWO2010029635A1 (en) * | 2008-09-11 | 2012-02-02 | パイオニア株式会社 | Method for forming metal wiring and electronic component provided with metal wiring |
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