JPS63221505A - Non-linear dielectric element - Google Patents
Non-linear dielectric elementInfo
- Publication number
- JPS63221505A JPS63221505A JP62053832A JP5383287A JPS63221505A JP S63221505 A JPS63221505 A JP S63221505A JP 62053832 A JP62053832 A JP 62053832A JP 5383287 A JP5383287 A JP 5383287A JP S63221505 A JPS63221505 A JP S63221505A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric element
- pulse voltage
- present
- solid solution
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000654 additive Substances 0.000 claims description 7
- 239000006104 solid solution Substances 0.000 claims description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 235000007911 Anacolosa luzoniensis Nutrition 0.000 description 1
- 244000217177 Anacolosa luzoniensis Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、非直線性誘電体素子、特に［１ａＴｉＯ，ｌ
系多結晶固溶体からなり、誘電率が電界の強度によって
変化する非直線性を利用した非直線性誘電体素子に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a non-linear dielectric element, particularly [1aTiO,l
The present invention relates to a nonlinear dielectric element that is made of a polycrystalline solid solution and utilizes nonlinearity in which the dielectric constant changes depending on the intensity of an electric field.
螢光灯を点灯するときの点灯方式としてグロースタータ
方式やラピッドスタータ方式等があるが、前者は点灯す
るまでに時間がかかり、後者は消費電力が大きいという
欠点があり、これを解決するために非直線性誘電体素子
が使用されている。There are glow starter methods, rapid starter methods, etc. as lighting methods for lighting fluorescent lamps, but the former has the disadvantage that it takes a long time to turn on, and the latter consumes a lot of power.To solve this problem, Non-linear dielectric elements are used.
この非直線性誘電体素子を使用した点灯回路は第８図に
示されるものであり、同図中のＣｎが非直線性誘電体素
子である。A lighting circuit using this non-linear dielectric element is shown in FIG. 8, where Cn is the non-linear dielectric element.
この非直線性誘電体素子Ｃｎに交流電圧Ｅを印加し、こ
の電圧Ｅを徐々に高めるとき、これに蓄積される電荷Ｉ
Ｑは直線的に増大するが、飽和電圧Ｅ０以上では誘電率
が電界の強度により変化するため、Ｑはほぼ一定となる
。When an AC voltage E is applied to this non-linear dielectric element Cn and this voltage E is gradually increased, a charge I accumulated therein
Although Q increases linearly, since the dielectric constant changes depending on the strength of the electric field above the saturation voltage E0, Q becomes approximately constant.
すなわち、第８図の回路において上記のように交流電圧
が印加されるとき、非直線性誘電体素子ＣｎのＱもこの
交流電圧の増加と共に大きくなるが、交流電圧がＥ。以
上になっても、このＱは一定である。従ってＱ＝ＣＶ
（Ｃは容ｌ、 Ｖは印加電圧）であるから交流電圧が
Ｅ０以上になったとき、非直線性誘電体素子の見掛は上
の容量が急激に減少して、これに蓄積される電荷は飽和
し、結果として充電電流が急激に減少する。このため、
上記非直線性誘電体素子を使用した点灯回路に設けられ
た安定器にはＬ−ｄｉ／ｄｔに比例した逆起電力が生じ
、放電灯Ｆ、Ｌを起動するトリガーパルスが発生するこ
とになる。That is, when an alternating voltage is applied as described above in the circuit of FIG. 8, the Q of the nonlinear dielectric element Cn also increases as the alternating voltage increases, but the alternating voltage is E. Even if it becomes more than that, this Q remains constant. Therefore, Q=CV
(C is the capacitance 1, V is the applied voltage), so when the AC voltage exceeds E0, the apparent capacitance of the nonlinear dielectric element decreases rapidly, and the charge accumulated in it decreases. saturates, and as a result, the charging current decreases rapidly. For this reason,
A back electromotive force proportional to L-di/dt is generated in the ballast installed in the lighting circuit using the above-mentioned non-linear dielectric element, and a trigger pulse for starting the discharge lamps F and L is generated. .
このような性質を利用して、この非直線性誘電体素子は
螢光灯やナトリウム灯等の放電灯点灯装置やイグナイタ
ー等の各種高電圧発生器の発振・昇圧回路のパルス発生
素子として使用されている。Utilizing these properties, this nonlinear dielectric element is used as a pulse generating element in the oscillation/boost circuit of various high voltage generators such as discharge lamp lighting devices such as fluorescent lamps and sodium lamps and igniters. ing.
ところで、従来の非直線性誘電体素子は、高温で直流（
ＤＣ）電圧をかけたときのパルス電圧の低下が著しく、
特にＢａＴｉ０＝多結晶体では１００℃で１００Ｖ直流
を約２０時間加え続けると、非直線性誘電体素子特有の
ヒステリシス曲線が第７図に示すように非対称になって
しまうという不都合を生じる。By the way, conventional nonlinear dielectric elements do not handle direct current (DC) at high temperatures.
When DC) voltage is applied, the pulse voltage decreases significantly,
In particular, in the case of BaTi0=polycrystalline material, if 100 V DC is continuously applied for about 20 hours at 100 DEG C., a disadvantage arises in that the hysteresis curve peculiar to nonlinear dielectric elements becomes asymmetrical as shown in FIG.
その結果、最近の電球型螢光灯に使用するには、これが
密閉型のため使用温度が１１０℃までの高温となり、し
かも点灯中は直流電圧をかけ続ける状態にほぼ等しくな
るので、長時間使用することができないという問題点が
あった。また、今までの電球型螢光灯は点灯回路にグロ
一点灯等を用い安定器を内蔵しているが、大型、重量大
でその結果大きなものとなるため、この電球型の使用範
囲も限定されるという問題点もあった。As a result, in order to use it in modern light bulb-type fluorescent lamps, because it is a sealed type, the operating temperature is high, up to 110 degrees Celsius, and the condition is almost equivalent to continuing to apply DC voltage while it is lit, so it cannot be used for a long time. The problem was that it could not be done. In addition, conventional light bulb type fluorescent lamps use a ballast for the lighting circuit and have a built-in ballast, but as they are large and heavy, the range of use of this light bulb type is also limited. There was also the problem of being exposed.
こうした諸事情から、従来常温でのパルス電圧の経時変
化が小さいことは勿論、高温負荷によるパルス電圧の経
時変化も小さい非直線性誘電体素子の開発が望まれてい
たものである。Under these circumstances, it has been desired to develop a nonlinear dielectric element that not only shows a small change in pulse voltage over time at room temperature but also shows a small change in pulse voltage over time due to high-temperature loads.
前記の如き問題点を解決するため、本発明の非直線性誘
電体素子は、チタン酸バリウムを主成分とする多結晶固
溶体からなるものであって、該固溶体の一般式を
ＡＢＯ，、＋ｘ −Ｍ１＋ｙ −Ｍｘ
ｆｔ＋とするときＭ ＋ 、 Ｍ ｔが
Ｍ＋ ｉ Ｍｎ＋ Ｃｒの化合物の少なくとも一種Ｍ
ｙ ；Ｙ、 Ｎｂ、 Ｖ、 Ｔａの化合物のうち少な
くとも一種
であり、かつｘ、 ｙが酸化物換算で０．５≦ｙ／ｘ
≦４（２）
０．０３≦ｘ＋ｙ≦０．３ ＋３１（但
しｘ、ｙは前記へＢ（ｈに対する重量％である）の範囲
に添加含有したことを特徴とするものである。In order to solve the above-mentioned problems, the nonlinear dielectric element of the present invention is made of a polycrystalline solid solution containing barium titanate as a main component, and the general formula of the solid solution is ABO, +x - M1+y-Mx
When ft+, M + , M t is M+ i Mn+ At least one type of Cr compound M
y; at least one of Y, Nb, V, and Ta compounds, and x and y are 0.5≦y/x in terms of oxides;
≦4(2) 0.03≦x+y≦0.3 +31 (However, x and y are added and contained in the above range of B (weight % with respect to h).
そして、本発明の非直線性誘電体素子は、パルス電圧の
高温負荷における経時変化を小さくすることができるな
どの利点を有するものである。The nonlinear dielectric element of the present invention has advantages such as being able to reduce changes in pulse voltage over time under high-temperature loads.
次に、本発明を実施例に基づき詳細に説明する。 Next, the present invention will be explained in detail based on examples.
実施例１
出発原料としてＢａＣ０ｔ＋ Ｔｉ１ｔ、 ＭｎＣ０ｔ
、 ＮｂｚＯｓを第１表に示す組成に計量し、これらを
ポリエチレンボｙｌ−とメノーボールを用いて湿式混合
した。Example 1 BaC0t+ Ti1t, MnC0t as starting materials
, NbzOs were measured to have the composition shown in Table 1, and these were wet-mixed using polyethylene boiling and an agate ball.
この混合物を脱水・乾燥後１１５０℃で２時間保持して
仮焼成せしめ、その後再びポリエチレンポットとメノー
ボールを用いて粉砕を行なった。さらに、この粉砕物の
水分を蒸発させた後、これに適当量のバインダーを加え
直径１６．５ｔｍ、厚さ０．６酊の円板に、３ ｔｏ
ｎ／ａＪプレスで加圧成形した。ついで１３００℃〜１
４００℃で２時間焼成した。After dehydration and drying, this mixture was held at 1150° C. for 2 hours to undergo temporary firing, and then pulverized again using a polyethylene pot and an agate ball. Furthermore, after evaporating the moisture of this pulverized material, an appropriate amount of binder was added to it, and 3 to
Pressure molding was performed using an n/aJ press. Then 1300℃~1
It was baked at 400°C for 2 hours.
かくして得られた磁器素子に銀電極を焼付け、その後誘
電率、ｔａｎδ、絶縁抵抗（ＩＲ）を測定し、また第８
図の回路でパルス電圧を測定し、これらの結果を第１表
に示した。A silver electrode was baked on the thus obtained ceramic element, and then the dielectric constant, tan δ, and insulation resistance (IR) were measured.
Pulse voltage was measured using the circuit shown in the figure, and the results are shown in Table 1.
さらに、Ｎｂ１Ｏｓ量別の高温負荷前後のＤ−Ｅヒステ
リシス曲線、パルス電圧の変化図を第１図〜第３図に、
Ａ／Ｂ別の高温負荷前後のＤ−Ｅヒステリシス曲線、パ
ルス電圧の変化図を第４図に示した。なお、高温負荷は
、１００℃で直流電圧を２０時間印加して行ったもので
ある。また、第１図〜第４図（第５図〜第７図において
も同じ）において横軸の１目盛は４０Ｖを表わしている
。Furthermore, D-E hysteresis curves and pulse voltage change diagrams before and after high-temperature load for each Nb1Os amount are shown in Figures 1 to 3.
FIG. 4 shows D-E hysteresis curves and pulse voltage changes before and after high-temperature load for A/B. Note that the high temperature load was performed by applying a DC voltage at 100° C. for 20 hours. Further, in FIGS. 1 to 4 (the same applies to FIGS. 5 to 7), one scale on the horizontal axis represents 40V.
第 １ 表
第 １ 表（つづき）
第１表において、Ｏ印の付加された試料番号１゜２．７
，１４，１５．２１は本発明の範囲外である。この表か
られかるように、本発明範囲内のものはすべてパルス電
圧が４００ｖ以上と高い値を示している。また、第１図
〜第３図、及び第７図に示すように、高温負荷後のＤ−
Ｅヒステリシス曲線については、母材として示す一〇〇
だけ添加したちのに比較してガロ０とＮｂ＊Ｏｓを添加
した本発明に係るものではヒステリシス曲線の形が変形
せず、またパルス電圧の値は高温負荷前後で比較して変
化が少ないことがわかる。Table 1 Table 1 (continued) In Table 1, sample numbers marked with O are 1゜2.7
, 14, 15.21 are outside the scope of the present invention. As can be seen from this table, all of the products within the range of the present invention exhibited high pulse voltages of 400 V or more. In addition, as shown in Figures 1 to 3 and Figure 7, D-
Regarding the E hysteresis curve, the shape of the hysteresis curve does not change in the case of the material according to the present invention in which Galo 0 and Nb*Os are added, and the shape of the pulse voltage It can be seen that there is little change in the value compared before and after high temperature loading.
本発明に係る非直線性誘電体素子の利点は、高温でのＤ
Ｃバイアス印加（高温負荷）によってもＤ−Ｅヒステリ
シス曲線及びパルス電圧が変化を受けにくいということ
であるが、これを実現させるために添加物として例えば
ＭｎＯ，Ｃｒ１０２の少な（とも一方と例えばＮｂｔＯ
ｓ＋ ＹｉＯｓ＋ ＴａｔＯｓ＋ ｖ、ｏ、から
′選んだ少なくとも一種の併用を行なうものである。The advantage of the nonlinear dielectric element according to the present invention is that the D
This means that the D-E hysteresis curve and pulse voltage are not easily affected by C bias application (high-temperature load).
s+ YiOs+ TatOs+ v, o, from
' At least one of the selected drugs is used in combination.
どちらか一方では、この特長を実現できない。This feature cannot be achieved with either one.
さらに、第１表及び第４図より、Ａ／Ｂ比は０．９５未
満であると高温負荷時のＤ−Ｅヒステリシス曲線及びパ
ルス電圧については本発明の所期の効果が得られず、ま
たＡ／Ｂ比が１．０３以上ではパルス電圧が４００ｖ以
下となり実用的ではない。Furthermore, from Table 1 and FIG. 4, if the A/B ratio is less than 0.95, the desired effects of the present invention cannot be obtained with respect to the D-E hysteresis curve and pulse voltage during high-temperature loads; If the A/B ratio is 1.03 or more, the pulse voltage will be 400 V or less, which is not practical.
さらに、第１表より、添加物の総量が０．３ｗｔ％を超
すと半導体化したり、パルス電圧が４００ｖ以下となり
好ましくないし、総量が０．０３ｗＬ％未満であったり
、ＮｂｚＯｓ等の添加量とＭｎＯ等の添加量との比、す
なわち前出のｙとＸの比が０．５≦ｙ八≦４の範囲を外
れると本発明の効果が得られないことがわかる。Furthermore, from Table 1, if the total amount of additives exceeds 0.3wt%, it will become a semiconductor and the pulse voltage will be less than 400V, which is not preferable. It can be seen that the effects of the present invention cannot be obtained when the ratio of the addition amount of y and X, that is, the ratio of y and
次に、ＮｂｚＯｓ以外の添加物については、以下の実施
例に基づき説明する。Next, additives other than NbzOs will be explained based on the following examples.
実施例２
出発原料としてＢａＣＯ３＋ Ｔｉ０ｚに加えて添加物
として第２表に示すものを同表に示す組成に計量し、実
施例１と同様にして電気的特性を求めた。これにより第
２表及び第５〜６図に示す結果が得られた。なお、第２
表において、○印の付加された試料番号２９は本発明の
範囲外である。Example 2 In addition to BaCO3+ TiOz as a starting material, the additives shown in Table 2 were weighed to give the composition shown in the same table, and the electrical properties were determined in the same manner as in Example 1. As a result, the results shown in Table 2 and Figures 5 and 6 were obtained. In addition, the second
In the table, sample number 29 marked with a circle is outside the scope of the present invention.
以下、余白
これらの第２表、第５〜６図は添加物の種類及び添加量
と誘電率、ｔａｎδ、絶縁抵抗（ＩＲ）及びパルス電圧
との関係、高温負荷前後のＤ−Ｅヒステリシス曲線及び
パルス電圧の変化をそれぞれ示している。Table 2 and Figures 5 and 6 below show the relationships between the types and amounts of additives, dielectric constant, tan δ, insulation resistance (IR), and pulse voltage, and the D-E hysteresis curves before and after high-temperature loading. Each shows the change in pulse voltage.
第２表及び第５〜６図から明らかなように、第２表中の
添加物及び添加量ではパルス電圧が４００ｖ以上と高い
値を示し、かつ高温負荷前後のＤ−Ｅヒステリシス曲線
及びパルス電圧が本発明による利点を示している。As is clear from Table 2 and Figures 5 and 6, the pulse voltage shows a high value of 400 V or more for the additives and amounts added in Table 2, and the D-E hysteresis curves and pulse voltage before and after high temperature loading are shown. shows the advantages of the present invention.
前記実施例１、実施例２では主成分としてＢａＴｉＯｓ
だけの組成について説明した。しかし本発明では、この
ＢａＴｉＯｓのＢａの一部をＰｂ、 Ｃａ、 Ｓｒに、
またＴｉの一部をＳｎ、 Ｚｒに置換することもでき、
これにより同様に本発明の所期の効果が得られる。In Examples 1 and 2, BaTiOs was used as the main component.
Only the composition was explained. However, in the present invention, a part of Ba of this BaTiOs is converted into Pb, Ca, Sr,
Also, a part of Ti can be replaced with Sn or Zr.
This similarly provides the desired effect of the present invention.
以下、この実施例について説明する。This example will be explained below.
実施例３
出発原料としてＢａＣＯ３，ＳｒＣＯ３，ＣａＣＯ５＋
ｐｂｏ。Example 3 BaCO3, SrCO3, CaCO5+ as starting materials
pbo.
Ｔｉ０ｚ＋ ５ｎＯｚ＋ Ｚｒ０ｚ＋ ＭｎＣ０ｆｆ＋
Ｎｂ１Ｏｓを第３表に示す配合比で計量し、実施例１
と同様にして電気的特性を求めた。 結果を第３表に示
す。Ti0z+ 5nOz+ Zr0z+ MnC0ff+
Nb1Os was measured at the blending ratio shown in Table 3, and Example 1
The electrical characteristics were determined in the same manner as above. The results are shown in Table 3.
以下、余白
この第３表では３ａＴｉＯ＊の主組成のＢａの一部をＳ
ｒ。Below, in this Table 3, a part of Ba in the main composition of 3aTiO* is S
r.
Ｃａ、 Ｐｂに、またＴｉの一部をＳｎ、 Ｚｒに置換
した組成における特性の代表例を示している。第３表中
で○印の付加された試料番号４０，４４．４７．５０゜
５３は本発明の範囲外である。Typical examples of characteristics are shown in compositions in which Ca and Pb are substituted, and a portion of Ti is substituted with Sn and Zr. Sample numbers 40, 44, 47, and 50°53 marked with a circle in Table 3 are outside the scope of the present invention.
これらからＢａを置換したＳｒ＋ Ｃａ＋ Ｐｂ及びＴ
ｉを置換したＺｒ、 Ｓｎはいずれも０．９モル％以下
であればパルス電圧が４００Ｖ以上となり、しかもヒス
テリシス曲線及びパルス電圧の高温負荷特性について本
発明の所期の効果が得られることがわかる。Sr+ Ca+ Pb and T which replaced Ba from these
It can be seen that if both Zr and Sn substituted with i are 0.9 mol% or less, the pulse voltage becomes 400 V or more, and the desired effects of the present invention can be obtained in terms of the hysteresis curve and the high temperature load characteristics of the pulse voltage. .
本発明によれば、従来の非直線性誘電体素子の高温負荷
によるヒステリシス曲線の変形、パルス電圧の低下を防
ぎ、従来品より高温の範囲（１００〜１１０℃）でも使
用可能なものを提供することができる。したがって、密
閉化が要求される電球型螢光灯の点灯回路に好適に使用
することも可能になり、この結果、グローランプを使用
することなく点灯回路を構成できるので、電球型螢光灯
を一層小型・軽量化することができる。According to the present invention, it is possible to prevent deformation of the hysteresis curve and drop in pulse voltage caused by high-temperature loads of conventional nonlinear dielectric elements, and to provide an element that can be used even in a higher temperature range (100 to 110°C) than conventional products. be able to. Therefore, it can be suitably used in lighting circuits for compact fluorescent lamps that require hermetic sealing.As a result, lighting circuits can be constructed without using glow lamps, making it possible to It can be made even smaller and lighter.
本発明の非直線性誘電体素子は他の用途にも適用するこ
とができ、過酷な温度条件下で好適な非直線性誘電体素
子を提供できる。また、従来使用している螢光灯ナトリ
ウム灯の放電点灯装置、あるいはイグナイタ等の各種高
電圧発生器の発振・昇圧回路のパルス発生素子として本
発明の非直線性誘電体素子を使用することにより信顛性
の向上につながるものである。The nonlinear dielectric element of the present invention can be applied to other uses, and can provide a nonlinear dielectric element suitable for severe temperature conditions. In addition, by using the nonlinear dielectric element of the present invention as a pulse generating element in a conventionally used discharge lighting device for a sodium fluorescent lamp or an oscillation/boosting circuit of various high voltage generators such as an igniter. This leads to improved credibility.
第１図〜第６図は本発明の実施例の結果を示すもので、
第り図（ａ）、 （ｂ）は高温負荷によるＤ−Ｅヒステ
リシス曲線及びパルス電圧の変化図、第２図ｔａ＋ 〜
（ｄｌ及び第３図（ａｌ 、 （ｂｌはＭｎＯを一定に
したときのＮｂａＯｓ量別の高温負荷後のＤ−Ｅヒステ
リシス曲線及びパルス電圧の変化図、第４図＋ａｌ〜（
ｆｌはＡ／Ｂ托別の高温負荷後のＤ−８ヒステリシス曲
線及びパルス電圧の変化図、第５図ｆａｔ〜＋ｄ＋及び
第６図は添加物の種類別の高温負荷後のＤ−Ｅヒステリ
シス曲線及びパルス電圧の変化図、第７図ｆａ＋、 （
ｂｌは従来の非直線性誘電体素子の高温負荷におけるＤ
−Ｅヒステリシス曲線及びパルス電圧の変化図、第８図
は非直線性誘電体素子を使用した放電灯点灯の回路図で
ある。
特許出願人 ティーディーケイ株式会社代理人 弁理士
薬 師 稔！■−Figures 1 to 6 show the results of Examples of the present invention.
Figure 2 (a) and (b) are the D-E hysteresis curve and pulse voltage change diagram due to high temperature load, Figure 2 ta+ ~
(dl and Figure 3 (al), (bl is a diagram of the change in D-E hysteresis curve and pulse voltage after high-temperature load depending on the amount of NbaOs when MnO is kept constant, Figure 4 + al ~ (
fl is the D-8 hysteresis curve and pulse voltage change diagram after high-temperature load for each A/B type, Figure 5 fat~+d+ and Figure 6 are D-E hysteresis curve after high-temperature load for each type of additive. and pulse voltage change diagram, Fig. 7 fa+, (
bl is D of a conventional nonlinear dielectric element under high temperature load.
-E hysteresis curve and pulse voltage change diagram, FIG. 8 is a circuit diagram for lighting a discharge lamp using a non-linear dielectric element. Patent Applicant TDC Co., Ltd. Agent Patent Attorney Pharmacist Minoru! ■−
Claims (1)
らなり、該固溶体の一般式を ＡＢＯ＿３＋ｘ・Ｍ＿１＋ｙ・Ｍ＿２ とするときＭ＿１、Ｍ＿２が Ｍ＿１；Ｍｎ、Ｃｒの化合物の少なくとも一種Ｍ＿２；
Ｙ、Ｎｂ、Ｖ、Ｔａの化合物のうち少なくとも一種 であり、かつｘ、ｙが酸化物換算で ０．５≦ｙ／ｘ≦４ ０．０３≦ｘ＋ｙ≦０．３ （但しｘ、ｙは前記ＡＢＯ＿３に対する重量％である）
の範囲に添加含有したことを特徴とする非直線性誘電体
素子。 （２）前記チタン酸バリウムの多結晶固溶体の化学式を （Ｂａ＿１＿−＿ｘＭ＿ｘ）・（Ｔｉ＿１＿−＿ｙ＿−
＿ｚＺｒ＿ｙＳｎ＿ｚ）・Ｏ＿３とするときＭがＣａ、
Ｓｒ、Ｐｂの一種又は二種以上でぁり、かつｘ、ｙ、ｚ
が ０≦ｘ≦０．００９ ０≦ｙ≦０．００９ ０≦ｚ≦０．００９ の範囲にあることを特徴とする特許請求の範囲第１項記
載の非直線性誘電体素子。 （３）前記チタン酸バリウムの多結晶固溶体の一般式を ＡＢＯ＿３とするとき ０．９５≦Ａ／Ｂ≦１．０２ の範囲にあることを特徴とする特許請求の範囲第１項又
は第２項記載の非直線性誘電体素子。 （４）パルス発生器、放電灯点灯装置、毎サイクル放電
用昇圧装置等の非直線性誘電体素子とすることを特徴と
する特許請求の範囲第１〜第３項のいずれか１項記載の
非直線性誘電体素子。[Scope of Claims] (1) Consisting of a polycrystalline solid solution containing barium titanate as a main component, where the general formula of the solid solution is ABO_3+x・M_1+y・M_2, M_1 and M_2 are at least one of the compounds of M_1; Mn and Cr. Kind M_2;
At least one of Y, Nb, V, and Ta compounds, and x and y are 0.5≦y/x≦4 0.03≦x+y≦0.3 (however, x and y are the above-mentioned (% by weight relative to ABO_3)
A non-linear dielectric element characterized by containing an additive in the range of . (2) The chemical formula of the polycrystalline solid solution of barium titanate is (Ba_1_-_xM_x)・(Ti_1_-_y_-
When _zZr_ySn_z)・O_3, M is Ca,
One or more types of Sr, Pb, and x, y, z
The nonlinear dielectric element according to claim 1, wherein is in the range of 0≦x≦0.009, 0≦y≦0.009, and 0≦z≦0.009. (3) Claim 1 or 2, characterized in that when the general formula of the polycrystalline solid solution of barium titanate is ABO_3, it is in the range of 0.95≦A/B≦1.02. The nonlinear dielectric element described above. (4) The non-linear dielectric element according to any one of claims 1 to 3, which is a non-linear dielectric element for a pulse generator, a discharge lamp lighting device, a booster for every cycle discharge, etc. Nonlinear dielectric element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62053832A JPS63221505A (en) | 1987-03-09 | 1987-03-09 | Non-linear dielectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62053832A JPS63221505A (en) | 1987-03-09 | 1987-03-09 | Non-linear dielectric element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63221505A true JPS63221505A (en) | 1988-09-14 |
Family
ID=12953761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62053832A Pending JPS63221505A (en) | 1987-03-09 | 1987-03-09 | Non-linear dielectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63221505A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03165403A (en) * | 1989-11-24 | 1991-07-17 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition material |
| US6356037B1 (en) | 1998-04-08 | 2002-03-12 | Murata Manufacturing Co., Ltd. | Dielectric ceramic and a capacitor using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5556621A (en) * | 1978-10-20 | 1980-04-25 | Tdk Electronics Co Ltd | Nonnlinear dielectric element |
-
1987
- 1987-03-09 JP JP62053832A patent/JPS63221505A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5556621A (en) * | 1978-10-20 | 1980-04-25 | Tdk Electronics Co Ltd | Nonnlinear dielectric element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03165403A (en) * | 1989-11-24 | 1991-07-17 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition material |
| US6356037B1 (en) | 1998-04-08 | 2002-03-12 | Murata Manufacturing Co., Ltd. | Dielectric ceramic and a capacitor using the same |
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