JPS63216260A - Charged particle beam image lithography device - Google Patents
Charged particle beam image lithography deviceInfo
- Publication number
- JPS63216260A JPS63216260A JP4933187A JP4933187A JPS63216260A JP S63216260 A JPS63216260 A JP S63216260A JP 4933187 A JP4933187 A JP 4933187A JP 4933187 A JP4933187 A JP 4933187A JP S63216260 A JPS63216260 A JP S63216260A
- Authority
- JP
- Japan
- Prior art keywords
- mcp
- charged particle
- particle beam
- ion beam
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 17
- 238000001459 lithography Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000002039 particle-beam lithography Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 24
- 238000001000 micrograph Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、イオン・ビーム描画装置等の荷電粒子ビーム
描画装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a charged particle beam lithography apparatus such as an ion beam lithography apparatus.
［従来の技術１
従来のイオン・ビーム描画装置として第３図及びその部
分拡大図である第４図に示すような構成が知られている
。[Prior Art 1] As a conventional ion beam lithography apparatus, a configuration as shown in FIG. 3 and FIG. 4, which is a partially enlarged view thereof, is known.
第３図及び第４図において１はイオン・ビーム源、ＩＢ
はイオン・ビーム、２は集束レンズ、３は鍋内電極、４
はシールド電極、５は材料、６はマイクロチャンネルプ
レー１・、７はアノード、８゜９は絶縁支持部材である
。3 and 4, 1 is the ion beam source, IB
is the ion beam, 2 is the focusing lens, 3 is the electrode in the pan, 4
5 is a shield electrode, 5 is a material, 6 is a microchannel plate 1, 7 is an anode, and 8.9 is an insulating support member.
上記装置では、イオン・ビーム源１で生成されたイオン
・ビームは集束レンズ２により集束されて材料５上に照
射されると共に、走査信号が供給されている偏向電極３
によって材料上で２次元走査される。このとき材ｔ；１
から放出される電子、例えば２次電子を材料５の直上に
配置されるマイクロチャンネルプレート６（以下ＭＣＰ
と称する）で検出し、得られた映像信号を表示装置へ送
ることによって２次電子像を１ｑて、材料の表面観察を
行なっている。In the above device, an ion beam generated by an ion beam source 1 is focused by a focusing lens 2 and irradiated onto a material 5, and a deflection electrode 3 is supplied with a scanning signal.
A two-dimensional scan is performed on the material by. At this time, material t;1
A microchannel plate 6 (hereinafter referred to as MCP) placed directly above the material 5 collects electrons emitted from the material 5, such as secondary electrons.
The surface of the material is observed by detecting it with a secondary electron image (1q) and sending the obtained video signal to a display device.
ところで、材料の直上に配置されるＭＣＰ６のプレート
中央には照射されるイオン・ビームの通通孔が設けられ
ていると共に、該通過孔には円筒型のシールド電極４が
絶縁支持部材８を介して挿入されている。そのため該イ
オン・ビームは該シールド電極４内を通り材料５に照射
されている。By the way, a through hole for the ion beam to be irradiated is provided in the center of the plate of the MCP 6 placed directly above the material, and a cylindrical shield electrode 4 is connected to the through hole through an insulating support member 8. It has been inserted. Therefore, the ion beam passes through the shield electrode 4 and is irradiated onto the material 5.
［発明が解決しようとする問題点］
上記従来例においてＭＣＰ６には、例えば２次電子入射
面ａに１００Ｖ、入射面ａと出身１而すの間にＩＫＶ、
更に出射面すとアノード７の間に１００ｖの電圧が印加
されている。そのため、第４図中に破線で示すような等
電位面がＭＣＰのイオン・ビーム通過孔周縁部に発生し
、前記ＭＣＰを通過するイオン・ビームに対して静電レ
ンズ作用を呈する。そこで、接地電位が与えられたシー
ルド電極４でイオン・ビーム通過孔の周囲を囲むように
している。しかしながら、このようなシールド電極によ
って通過孔の中心付近のレンズ場は除くことができるも
のの、中心から離れるにつれてレンズ場が残ることは避
けられない。そのため、例えば第４図に示すようにイオ
ン・ビームの光軸Ｂ−Ｂ＝に対してＭＣＰ６及びシール
ド電極７のイオン・ビーム通過孔の近傍に発生する静電
レンズ場の電気的中心がＸ−Ｘ′軸上にあり、双方の軸
がずれているような場合、イオン・ビームはレンズ場の
強い通過孔周縁部を通過することになり、そのレンズ作
用を受（）て大ぎく不正偏向されてしまう問題がある。[Problems to be Solved by the Invention] In the above conventional example, the MCP 6 has, for example, 100V on the secondary electron incident surface a, IKV between the incident surface a and the origin 1,
Further, a voltage of 100 V is applied between the output surface and the anode 7. Therefore, an equipotential surface as shown by the broken line in FIG. 4 is generated at the periphery of the ion beam passage hole of the MCP, and exhibits an electrostatic lens effect on the ion beam passing through the MCP. Therefore, the ion beam passage hole is surrounded by a shield electrode 4 to which a ground potential is applied. However, although the lens field near the center of the passage hole can be removed by such a shield electrode, it is inevitable that the lens field remains as the distance from the center increases. Therefore, as shown in FIG. 4, for example, the electrical center of the electrostatic lens field generated near the ion beam passage hole of the MCP 6 and shield electrode 7 is X- If the ion beam is on the X' axis and both axes are misaligned, the ion beam will pass through the periphery of the passage hole, where the lens field is strong, and will be severely incorrectly deflected by the lens action. There is a problem with this.
特に、イオン・ビームが低加速電圧で照射された場合、
該レンズ作用にＪ：る該イオン・ビームの偏向の角度が
増加するため、イオン・ビームによる描画精度が低下し
、材ｒｉ上の目標位置に正確なイオン・ビーム描画を行
なうことに支ド９を来たしていた。In particular, when the ion beam is irradiated with a low accelerating voltage,
Since the angle of deflection of the ion beam due to the lens action increases, the writing accuracy of the ion beam decreases, making it difficult to accurately write the ion beam at the target position on the material. was coming.
本発明は上記問題点を考慮し、描画精度の向上が可能な
機構を備えた荷電粒子ビーム描画装着を提供することを
目的としている。The present invention takes the above-mentioned problems into consideration and aims to provide a charged particle beam lithography device equipped with a mechanism capable of improving the lithography accuracy.
［問題点を解決するための手段］
そのため本発明は、材料に照射する荷電粒子ビームを発
生する手段と、該荷電粒子ビームを材料上に集束させる
レンズ手段と、該荷電粒子ビーム照射により材料から発
生する電子を検出するため該レンズ手段と材料との間に
配置され、荷電粒子ビーム光軸に略垂直な検出面を有し
その検出面の中央にビーム通過孔を有する電子検出器と
を具備した荷電粒子ビーム描画装置において、該検出器
を前記荷電粒子ビーム光軸と略直交する面内で２次元的
に移動させる軸合せ機構を設けたことを特徴とする。[Means for Solving the Problems] Therefore, the present invention provides a means for generating a charged particle beam to irradiate a material, a lens means for focusing the charged particle beam on the material, and a method for irradiating the material with the charged particle beam. an electron detector disposed between the lens means and the material for detecting the generated electrons, having a detection surface substantially perpendicular to the optical axis of the charged particle beam and having a beam passage hole in the center of the detection surface; The charged particle beam drawing apparatus is characterized in that an alignment mechanism is provided for two-dimensionally moving the detector in a plane substantially perpendicular to the charged particle beam optical axis.
［作用１
本発明においては、軸合せ機構によって、該ＭＣＰを荷
電粒子ビーム光軸に略直交する面内で移動させることに
より、ＭＣＰのビーム通過孔部分に形成されるレンズ場
の中心を荷電粒子ビームの光軸に一致させ、描画の粘度
を向上させるようにしている。[Operation 1] In the present invention, by moving the MCP in a plane substantially perpendicular to the optical axis of the charged particle beam using the alignment mechanism, the center of the lens field formed in the beam passage hole portion of the MCP is aligned with the charged particle beam. It is made to match the optical axis of the beam to improve the viscosity of drawing.
し実施例］
以下、本発明の実施例を図面に基づいて説明する。第１
図は本発明の１実施例を説明するための縦断面図、第２
図は第１図のａ−ａ＝断面図である。第１図及び第２図
にｃ１５いて第３図と同一の構成要素には同一番号を付
しである。Embodiments] Hereinafter, embodiments of the present invention will be described based on the drawings. 1st
The figure is a longitudinal sectional view for explaining one embodiment of the present invention, and the second figure is a longitudinal sectional view for explaining one embodiment of the present invention.
The figure is a sectional view taken along line a-a in FIG. Components in FIGS. 1 and 2 that are the same as those in FIG. 3 are given the same numbers.
この実施例が第３図と異なるのは、環状ＭＣＰ６が筐体
１１内外を気密に連通する軸合せねじ１０Ｘ、１０Ｘ−
，１０Ｙ、１０Ｙ′によって四方から支持されている点
である。This embodiment differs from FIG. 3 in that the annular MCP 6 has alignment screws 10X, 10X-
, 10Y, and 10Y'.
レンズ２を介して材料５上に照射されるイオン・ビーム
は前記レンズ２とＭＣＰ６の間に設けられる走査用偏向
電極３によって材料上の一定面積内で走査される。その
時材料５のイオンビーム照射面から放出される２次電子
をＭＣＰ６によって増倍して検出することにより、所謂
走査電子顕微鏡画像を得ることができる。この画像を観
測しながらＭＣＰの軸合せねじを調節して、画像の歪が
最小となる位置を決める。以上のＪ：うな操作を行なう
ことによりｆ１４ｃＰ６のイオン・ビーム通過孔部に形
成される静電レンズ場の電気的中心とイオン・ビームの
光軸が一致するＭＣＰの位置を決定することができる。The ion beam irradiated onto the material 5 through the lens 2 is scanned within a certain area on the material by a scanning deflection electrode 3 provided between the lens 2 and the MCP 6. By multiplying and detecting the secondary electrons emitted from the ion beam irradiated surface of the material 5 by the MCP 6, a so-called scanning electron microscope image can be obtained. While observing this image, adjust the alignment screw of the MCP to determine the position where the distortion of the image is minimized. By performing the above operation J:, it is possible to determine the position of the MCP where the electrical center of the electrostatic lens field formed in the ion beam passage hole of f14cP6 and the optical axis of the ion beam coincide.
なお、本発明は電子ビームを含むあらゆる荷電粒子ビー
ム描画装置に適用できることは言うまでもない。It goes without saying that the present invention can be applied to any charged particle beam drawing apparatus including an electron beam.
［発明の効果］
以上の説明から明らかなように、本発明によれば、ＭＣ
Ｐに軸合せ機構を設けたため、該ＭＣＰの開花部に形成
される静電レンズ場による影響が最小になるようにＭＣ
Ｐの軸合せを行なうことができ、その結果荷電粒子ビー
ムによる描画精度が向上し材料上の目標位置に正確な描
画を行なうことが可能となった。[Effect of the invention] As is clear from the above explanation, according to the present invention, MC
Since an axis alignment mechanism is provided for P, the MC can be adjusted so that the influence of the electrostatic lens field formed at the flowering part of the MCP is minimized.
It was possible to align the axis of P, and as a result, the precision of drawing by the charged particle beam was improved, making it possible to accurately draw at the target position on the material.
第１図は本発明の１実施例を説明するための縦断面図、
第２図は第１図のａＥ１′断面図、第３図及び第４図は
従来例を説明するための図である。
１・・・イオン・ビーム源、ＩＢ・・・イオン・ビーム
、２・・・集束レンズ、３・・・偏向電極、４・・・シ
ールド電極、５・・・材料、６・・・マイクロチャンネ
ルプレート、７・・・７ノード、８．９・・・絶縁支持
部材、１０Ｘ。
１０Ｘ＝、ＩＯＹ、１０Ｙ′・・・軸合せねじ、１１・
・・Ｙ体。
躬１ｍ
１ｃ′Ｙ’FIG. 1 is a longitudinal sectional view for explaining one embodiment of the present invention,
FIG. 2 is a sectional view aE1' of FIG. 1, and FIGS. 3 and 4 are diagrams for explaining a conventional example. DESCRIPTION OF SYMBOLS 1... Ion beam source, IB... Ion beam, 2... Focusing lens, 3... Deflection electrode, 4... Shield electrode, 5... Material, 6... Microchannel Plate, 7...7 nodes, 8.9...Insulating support member, 10X. 10X=, IOY, 10Y'...Axis alignment screw, 11.
...Y body. 1m 1c'Y'
Claims (1)
電粒子ビームを材料上に集束させるレンズ手段と、該荷
電粒子ビーム照射により材料から発生する電子を検出す
るため該レンズ手段と材料との間に配置され、荷電粒子
ビーム光軸に略垂直な検出面を有しその検出面の中央に
ビーム通過孔を有する電子検出器とを具備した荷電粒子
ビーム描画装置において、該検出器を前記荷電粒子ビー
ム光軸と略直交する面内で２次元的に移動させる軸合せ
機構を設けたことを特徴とする荷電粒子ビーム描画装置
。means for generating a charged particle beam to irradiate the material; lens means for focusing the charged particle beam onto the material; and between the lens means and the material for detecting electrons generated from the material by the charged particle beam irradiation. In a charged particle beam writing apparatus, the charged particle beam writing apparatus is equipped with an electron detector, which is arranged at A charged particle beam lithography apparatus characterized by being provided with an alignment mechanism for two-dimensionally moving the beam in a plane substantially orthogonal to the optical axis of the beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4933187A JPS63216260A (en) | 1987-03-04 | 1987-03-04 | Charged particle beam image lithography device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4933187A JPS63216260A (en) | 1987-03-04 | 1987-03-04 | Charged particle beam image lithography device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63216260A true JPS63216260A (en) | 1988-09-08 |
Family
ID=12828004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4933187A Pending JPS63216260A (en) | 1987-03-04 | 1987-03-04 | Charged particle beam image lithography device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63216260A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191204A (en) * | 2003-12-25 | 2005-07-14 | Kyocera Corp | Optical element assembling body, assembling method, and electron beam apparatus using the same |
-
1987
- 1987-03-04 JP JP4933187A patent/JPS63216260A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191204A (en) * | 2003-12-25 | 2005-07-14 | Kyocera Corp | Optical element assembling body, assembling method, and electron beam apparatus using the same |
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