JPS63213377A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS63213377A JPS63213377A JP62045145A JP4514587A JPS63213377A JP S63213377 A JPS63213377 A JP S63213377A JP 62045145 A JP62045145 A JP 62045145A JP 4514587 A JP4514587 A JP 4514587A JP S63213377 A JPS63213377 A JP S63213377A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- light emitting
- conductivity type
- substrate
- znse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 44
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 abstract description 21
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 239000002344 surface layer Substances 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 230000009102 absorption Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 4
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 238000001194 electroluminescence spectrum Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は青色の半導体発光素子に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a blue semiconductor light emitting device.
（従来の技術）
青色発光素子を得るためのｆｆ５１の条件は、用いる半
導体の禁制帯幅Ｅにが２．６ｅｖｔ！：越えることであ
る。この条件を満たす半導体結晶としてはＴＩ −Ｖｌ
族、化合物半導体であるＺｎＳ （Ｅ（＝３．５ｅｖ）
、 ＺｎＳｅ（Ｅ区＝２．７ｅｖ）或いはこれらの結晶
がある。これらは直接遷移型であるため高い発光効率が
期待される。従来数も良く用いられているのはＺ ｎ
Ｓ ｅである。これは、ＺｎＳｅ結晶を基板として、
ＴＩ型およびｐ型のＺｎＳｅ層を 相成長させ、ｐｎ接
合を形成し、発光素子を得ている。(Prior Art) The condition for ff51 to obtain a blue light emitting element is that the forbidden band width E of the semiconductor used is 2.6evt! : It is to overcome. A semiconductor crystal that satisfies this condition is TI −Vl
group, compound semiconductor ZnS (E (=3.5ev)
, ZnSe (E section = 2.7ev) or crystals thereof. Since these are direct transition type, high luminous efficiency is expected. The conventional number that is often used is Z n
It is Se. This uses ZnSe crystal as a substrate,
TI type and p type ZnSe layers are phase grown to form a pn junction and a light emitting device is obtained.
ところが、このように成長させた発光素子に順方向に電
流を流すと、青色の光を発するが、その発光波長が、
ＺｎＳｅ基板の吸収＠ （〜４８０ｎｍ）に近いので結
晶内で吸収される割合が多くなってしまう。However, when a current is passed in the forward direction to a light emitting device grown in this way, it emits blue light, but the emission wavelength is
Since the absorption is close to that of the ZnSe substrate (up to 480 nm), the proportion of absorption within the crystal increases.
以上のことをより具体的に第４図を参照して説明する。The above will be explained in more detail with reference to FIG.
第４図はｎ型ＺｎＳｅ基板４１に、ＭＯＣＶＤ法により
ｎ型層ｎＳｅ層４２．ｐ型ＺｎＳｅ層４３を順次成長形
成した発光素子を示し、４４はｐｎ接合である・
この様な従来法による発光素子のｐｎ接合４４に順方向
に電流を流すと青色の光を発する。その進路を矢印で示
しである。ｐｎ接合７Ｉ４より下方向に出た光４５は１
度ＺｎＳｅ基板４１に入ると吸収されてしまい、結局発
光部分から外部へ出て眼に感するのはｐｎ接合４４から
上方に向って出た光４６だけになる。しかし、上方に向
った光４６もその一部は表面層内部吸収４７があり、外
へ出る光４８は一部分のみである。FIG. 4 shows an n-type layer nSe layer 42. A light emitting device is shown in which a p-type ZnSe layer 43 is sequentially grown, and 44 is a pn junction. When a current is passed in the forward direction through the pn junction 44 of such a conventional light emitting device, blue light is emitted. The course is indicated by an arrow. The light 45 emitted downward from the pn junction 7I4 is 1
When the light enters the ZnSe substrate 41, it is absorbed, and in the end, only the light 46 emitted upward from the pn junction 44 exits from the light emitting part and is felt by the eyes. However, part of the upwardly directed light 46 is absorbed inside the surface layer 47, and only part of the light 48 goes out.
このような訳で外部発光効率が極めて低く、十分な輝度
が得られないという欠点があった。For this reason, the external light emitting efficiency was extremely low, and there was a drawback that sufficient brightness could not be obtained.
（発明が解決しようとする問題点）
以上のように従来のＺｎＳｅ発光素子は、バンド端近傍
の青色発光の再吸収が大きくなり、発光効率の低下をも
たらすのが実状である。(Problems to be Solved by the Invention) As described above, in the conventional ZnSe light emitting device, reabsorption of blue light near the band edge increases, resulting in a decrease in luminous efficiency.
本発明はこのような問題を解決した高効率青色ＬＥＤの
構造を提供することを目的とする。An object of the present invention is to provide a highly efficient blue LED structure that solves these problems.
（問題点を解決するための手段）
本発明は、ＺｎＳｅ基板結晶上にこの結晶の禁制帯幅よ
り小さい例えばＺｎＳｅ基板層を形成し、発光接合を形
成することにより、結晶内部への吸収が抑えられ、良好
な青色ＬＥＤが得られることを特徴とする。(Means for Solving the Problems) The present invention suppresses absorption inside the crystal by forming, for example, a ZnSe substrate layer smaller than the forbidden band width of the crystal on a ZnSe substrate crystal and forming a light emitting junction. It is characterized in that a good blue LED can be obtained.
（作用）
ＺｎＳｅ、ＺｎＳ 青色ＬＥＤの製造には種々の方法が
知られている。これらは結晶基板と第−感電型の半導体
結晶層および第二導電型の半導体結晶層からなり、すべ
て同一物質で構成されている。(Operation) Various methods are known for manufacturing ZnSe, ZnS blue LEDs. These are composed of a crystal substrate, a first conductivity type semiconductor crystal layer, and a second conductivity type semiconductor crystal layer, all of which are made of the same material.
このように同一物質で構成された発光素子ではＰｎ接合
より発した光は基板吸収や表面層内部吸収により失なわ
れる割合は非常に高くなる。従って、本発明によれば基
板結晶より禁制帯幅の小さい混晶組成にすることで、基
板内部への光吸収を少なくでき、さらにｐｎ接合での混
晶組成もＸｔ’／およびｘＩ、 ｙｌの値を変化させｎ
型よりｐ型の禁制帯幅を大きくすることで表面層内部吸
収を極力抑えられ、上記で述べたような問題は無くなり
、素子特性的に優れた高い発光効率を有する青色発光素
子が得られる。In light emitting elements constructed of the same material as described above, the proportion of light emitted from the Pn junction is lost due to substrate absorption or internal absorption in the surface layer is very high. Therefore, according to the present invention, light absorption into the interior of the substrate can be reduced by making the mixed crystal composition smaller than the forbidden band width than the substrate crystal, and furthermore, the mixed crystal composition at the pn junction can be changed to Xt'/ and xI, yl. Change the value n
By making the forbidden band width of the p-type larger than that of the p-type, internal absorption in the surface layer can be suppressed as much as possible, the above-mentioned problems are eliminated, and a blue light-emitting element with excellent device characteristics and high luminous efficiency can be obtained.
（実施例）
以下、本発明の詳細な説明する。第１図は本発明の一実
施例の青色発光素子を示す。図において１１はｎ型Ｚｎ
Ｓｅ基板結晶であり、この上に原料としてジメチル亜鉛
（ＤＭＺ）、ジエチルテルルｙ−（ＤＥＳ）、 ジメ
チルセレン（ＤＭＳｅ）およびジエチルテルル（ＤＥＴ
ｅ）を用いたＭＯＣＶＤ法によりｎ型Ｚｎ５ｙＳｅ、−
ｙ−ｙＴｅｙ結晶層１２を成長させ、その上にｎ型層の
禁制布幅より大きいｐ型層 ｎ Ｓ ｘ′ｓ ｅｌ−１
１’ｘ′ Ｔ ｅ、／結晶層１３をやはりＭＯＣＶＤ法
でエピタキシャル成長させた。この時、ｘ、ｙおよびｘ
′、ｙ′値はＺｎＳｅ基板の格子定数にほぼ整合させた
。(Example) The present invention will be described in detail below. FIG. 1 shows a blue light emitting device according to an embodiment of the present invention. In the figure, 11 is n-type Zn
Se substrate crystal, on which dimethylzinc (DMZ), diethyltellurium (DES), dimethylselenium (DMSe) and diethyltellurium (DET) are deposited as raw materials.
e) by MOCVD method using n-type Zn5ySe, -
A y-yTey crystal layer 12 is grown, and a p-type layer n S x's el-1 whose width is larger than the forbidden cloth width of the n-type layer is grown on it.
The 1'x' Te,/crystalline layer 13 was also epitaxially grown using the MOCVD method. At this time, x, y and x
', y' values were approximately matched to the lattice constant of the ZnSe substrate.
第２図はこのようなｎ−ＶＩ族混晶を用いた発光素子に
おける光の出方を模式的に示したものである。いまｐｎ
接合に順方向に電流を流すと、混晶の組成比によって混
晶の吸収端に近い青色の光を発する。FIG. 2 schematically shows how light is emitted from a light emitting device using such an n-VI group mixed crystal. Now pn
When a current is passed through the junction in the forward direction, blue light near the absorption edge of the mixed crystal is emitted depending on the composition ratio of the mixed crystal.
ｐｎ接合２１より下方向に出た光２３は基板ＺｎＳｅ２
２で一部は吸収されるも大部分は反射されて上方へ向い
、外部へ放出される。また、ｐｎ接合２１から上方に向
って出た光２４は表面層内部吸収をほとんど受けずに大
部分が外に出てくる。以上のようにｐｎ接合２１から出
た光は有効に外部へ取り、出させることが出来る。The light 23 emitted downward from the pn junction 21 is the substrate ZnSe2.
2, some of it is absorbed, but most of it is reflected upward and emitted to the outside. Further, the light 24 emitted upward from the pn junction 21 is hardly absorbed within the surface layer and most of it comes out. As described above, the light emitted from the pn junction 21 can be effectively taken out and emitted.
この発光素子のＥＬスペクトルを第３図（ａ）に示す、
比較として従来の条件で構成したＺｎＳｅ発光素子の場
合のスペクトルを（ｂ）に示す。The EL spectrum of this light emitting element is shown in FIG. 3(a).
For comparison, the spectrum of a ZnSe light emitting device configured under conventional conditions is shown in (b).
これによって明らかなように本発明による場合、各結晶
層での光吸収が抑えられ１発光効率の高い良好な青色発
光素子が得られた。As is clear from this, in the case of the present invention, light absorption in each crystal layer was suppressed, and a good blue light emitting element with high luminous efficiency was obtained.
本発明は上記実施例で述べた成長法としてもＭＯＣＶＤ
法に限らず、他の気相成長法やＭＢＥ法或いは液相成長
法を利用することが可能である。The present invention also uses MOCVD as the growth method described in the above embodiments.
It is possible to use other vapor phase growth methods, MBE methods, or liquid phase growth methods.
その他１本発明はその趣旨を逸脱しない範囲で種々変形
して実施することができる。Other 1 The present invention can be implemented with various modifications without departing from the spirit thereof.
以上説明したように、基板Ｚｎ５ａ、ｎ型Ｚ ｎ Ｓつ
５ａｔ−ｘ−ｙＴｅｙ （０＜Ｘ＜１ 、 Ｏ＜ｙ＜１
）およびｐ型ＺｎＳ、ｘ’５ｃ１−ｙｉｘ′Ｔ６ｘ′
（０＜ｘ′＜１ ＋ Ｏ＜ｘ′＜ １ ）により構成し
かつ各層の界面で格子定数をほぼ整合させた材料および
構造を用いることにより、高い効率の青色発光素子を得
ることができる。As explained above, the substrate Zn5a, the n-type ZnS5at-x-yTey (0<X<1, O<y<1
) and p-type ZnS, x'5c1-yix'T6x'
A highly efficient blue light-emitting device can be obtained by using a material and structure that is configured by (0<x'<1 + O<x'<1) and whose lattice constants are substantially matched at the interfaces of each layer.
第１図は本発明の一実施例のｐｎ接合型発光素子および
禁制帯幅を示した模式図、第２図はその光の出方を説明
するための図、第３図は本発明と従来法で成長させた発
光素子のＥＬスペクトルを示した図、第４図は従来法の
ｐｎ接合型発光素子およびその光の出方を説明した図で
ある。
１１・・・ｎ型Ｚｎ５ａ基板結晶
１２−ｐ型Ｚｎ５ＳｓＴｅ結晶層
１３−ｐ型Ｚｎ５ＳｅＴａ結晶層 ２ｌ−ｐｎ接合２２
・・・ｎ型ＺｎＳｅ基板結晶
２３、２４・・・ｐｎ接合より出た光
４１・・・ｎ型ＺｎＳｅ基板結晶
４２・・・ｎ型ＺｎＳｅ結品層
４３・・・ｐ型ＺｎＳｅ結品層 ４４・・・ｐｎ接合
４５〜４８・・・ｐｎ接合より出た光
代理人 弁理士 則 近 憲 佑
同 竹花喜久男
Ｙ制辛＋＠ ＜ｅｖ＞
第１図
第２図
４９ｏｎ“Ｅ閣よ、。。。
第３図
第４図FIG. 1 is a schematic diagram showing a pn junction type light emitting device and a forbidden band width according to an embodiment of the present invention, FIG. 2 is a diagram for explaining how light is emitted, and FIG. 3 is a diagram showing the present invention and conventional FIG. 4 is a diagram showing the EL spectrum of a light emitting device grown by the method, and FIG. 4 is a diagram illustrating a conventional pn junction type light emitting device and how light is emitted from it. 11...n-type Zn5a substrate crystal 12-p-type Zn5SsTe crystal layer 13-p-type Zn5SeTa crystal layer 2l-pn junction 22
...N-type ZnSe substrate crystals 23, 24...Light emitted from the pn junction 41...N-type ZnSe substrate crystal 42...N-type ZnSe crystal layer 43...P-type ZnSe crystal layer 44 ...pn junction 45-48...Light agent from pn junction Patent attorney Nori Chika Ken Yudo Takehana Kikuo Y control + @ <ev> Figure 1 Figure 2 49 on "E-kaku." Figure 3 Figure 4
Claims (3)
＜ｙ＜１）結晶層および第二導電型ＺｎＳ＿ｘ＿′Ｓｅ
＿１＿−＿ｘ＿′＿−＿ｙ＿′Ｔｅ＿ｙ＿′（０＜ｘ′
＜１＜、０＜ｙ′＜１）結晶層が順次積層されて構成さ
れてなるる半導体発光素子において、前記第一導電型Ｚ
ｎＳＳｅＴｅ結晶層の禁制帯幅がＺｎＳｅ単結晶基板の
それよりも小さいことを特徴とする半導体発光素子。(1) First conductivity type ZnS_xSe_1_-_x_-_y (0<x<1, 0
<y<1) Crystal layer and second conductivity type ZnS_x_'Se
＿１＿−＿x＿′＿−＿y＿′Te＿y＿′(0<x′
<1<, 0<y'<1) In the semiconductor light emitting device configured by sequentially stacking crystal layers, the first conductivity type Z
A semiconductor light emitting device characterized in that a forbidden band width of an nSSeTe crystal layer is smaller than that of a ZnSe single crystal substrate.
が第二導電型ＺｎＳＳｅＴｅ結晶層のそれよりも小さい
ことである特許請求の範囲第１項記載の半導体発光素子
。(2) The semiconductor light emitting device according to claim 1, wherein the forbidden band width of the first conductivity type ZnSSeTe crystal layer is smaller than that of the second conductivity type ZnSSeTe crystal layer.
導電型ＺｎＳＳｅＴｅ結晶層がＺｎＳｅ単結晶基板に格
子整合していることを特徴とする特許請求の範囲第１項
記載の半導体発光素子。(3) The semiconductor light emitting device according to claim 1, wherein the first conductivity type ZnSSeTe crystal layer and the second conductivity type ZnSSeTe crystal layer are lattice matched to a ZnSe single crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045145A JPS63213377A (en) | 1987-03-02 | 1987-03-02 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045145A JPS63213377A (en) | 1987-03-02 | 1987-03-02 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63213377A true JPS63213377A (en) | 1988-09-06 |
Family
ID=12711111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62045145A Pending JPS63213377A (en) | 1987-03-02 | 1987-03-02 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63213377A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246175A (en) * | 1989-03-17 | 1990-10-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element |
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
-
1987
- 1987-03-02 JP JP62045145A patent/JPS63213377A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| US5616937A (en) * | 1988-09-02 | 1997-04-01 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| JPH02246175A (en) * | 1989-03-17 | 1990-10-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element |
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