JPS6321291B2 - - Google Patents
Info
- Publication number
- JPS6321291B2 JPS6321291B2 JP54003374A JP337479A JPS6321291B2 JP S6321291 B2 JPS6321291 B2 JP S6321291B2 JP 54003374 A JP54003374 A JP 54003374A JP 337479 A JP337479 A JP 337479A JP S6321291 B2 JPS6321291 B2 JP S6321291B2
- Authority
- JP
- Japan
- Prior art keywords
- grid
- insulating support
- electron gun
- net
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 239000011324 bead Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は電子銃の製造方法に係り、特に陰極線
管のネツクに内装され、かつ前記ネツクの内壁電
位の分布を適当に下げ、耐電圧特性の良好な電子
銃の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an electron gun, and in particular to a method for manufacturing an electron gun that is installed in a net of a cathode ray tube and that has good withstand voltage characteristics by appropriately lowering the distribution of the inner wall potential of the net. It is about the method.
陰極線管、例えばカラー受像管に於ては、その
管内の耐圧特性が不良であると受像機に組立てら
れたのち、例えば前記カラー受像管のネツクに内
装された陰極を含む電子銃の印加電圧の異なる電
極間及びこれら電極と前記ネツク内壁間を介して
放電現象を起し、前記陰極の熱電子放出面を損傷
したり、受像機の回路部品を焼損したりすること
がある。特に最近のカラー受像管では、その輝度
を向上させるために陽極電圧として30KV位の高
電圧で使用される場合が多く重要な問題となつて
いる。 In a cathode ray tube, such as a color picture tube, if the internal voltage resistance of the tube is poor, the voltage applied to the electron gun containing the cathode built into the neck of the color picture tube may be reduced after it is assembled into a picture receiver. A discharge phenomenon occurs between different electrodes and between these electrodes and the inner wall of the network, which may damage the thermionic emission surface of the cathode or burn out the circuit components of the image receiver. This has become an important issue, especially in recent color picture tubes, which are often used with a high anode voltage of about 30 KV in order to improve their brightness.
この耐圧不良の主原因は、例えば第１図に示す
ような陰極１、第１グリツド２、第２グリツド
３、第３グリツド４及び第４グリツド５からなる
バイポテンシヤル形電子銃が陰極線管のネツク６
に内装され、それぞれの電極に所定の電圧、即ち
第１グリツド２に接地電位、第２グリツド３に数
100Vの低電圧、第３グリツド４に4.5KV乃至
7KV、第４グリツド５に陽極電圧に近い25KV乃
至30KVが印加された場合、前記ネツク６内面に
沿つた電位分布は第２図の曲線７で示すように、
第４グリツド５から第１グリツド２方向に緩やか
に降下している。そしてネツク６内壁表面の電位
は低電圧印加電極例えば第１グリツド２や第２グ
リツド３近傍に於てもかなり高く、これら低電圧
印加グリツド２，３との間に高い電位差が生じ、
これが要因となり初期グローを発出し、耐圧劣化
を発生するものと考えられる。 The main cause of this poor voltage resistance is that the bipotential electron gun, which consists of a cathode 1, a first grid 2, a second grid 3, a third grid 4, and a fourth grid 5, is connected to the cathode ray tube network, as shown in FIG. 6
and a predetermined voltage is applied to each electrode, that is, the first grid 2 has a ground potential, and the second grid 3 has a predetermined voltage.
100V low voltage, 4.5KV to 3rd grid 4
7KV, and when 25KV to 30KV, which is close to the anode voltage, is applied to the fourth grid 5, the potential distribution along the inner surface of the neck 6 is as shown by curve 7 in FIG.
It descends gently from the fourth grid 5 towards the first grid 2. The potential on the inner wall surface of the net 6 is also quite high near the low voltage application electrodes, for example, the first grid 2 and the second grid 3, and a high potential difference occurs between these low voltage application grids 2 and 3.
It is thought that this is a factor that causes initial glow to be emitted and voltage resistance deterioration to occur.
従つて、この対策としてネツク６内壁の電位分
布を第２図の曲線８のように、低電圧印加の第２
グリツド３または中電圧印加の第３グリツド４近
傍にに於て引き下げでやればよいことになる。 Therefore, as a countermeasure to this problem, the potential distribution on the inner wall of the net 6 should be changed as shown by the curve 8 in FIG.
This can be done by lowering the voltage near the grid 3 or the third grid 4 to which a medium voltage is applied.
このためには例えば第３図及び第４図に示すよ
うに陰極線管のネツク１６内に陰極１１に相対設
して第１グリツド１２、第２グリリツド１３、第
３グリツド１４及び第４グリツド１５がそれぞれ
絶縁支持体１７を介して所定間隔を持つよう支持
された一体化一列配列構造を持つバイポテンシヤ
ル形電子銃の前記第３グリツド１４の中間電極１
４ａの一端部に、前記絶縁支持体１７を、その幅
方向に取り囲む様に半円形の導電部材１８の両端
部を固定点１９を介して固着し、前記導電部材１
８及び中間電極１４ａの縁部とネツク１６内壁と
の間隔を適当にすることにより、この部分から第
２グリツド１３、第１グリツド１２へのネツク内
壁の第２図に示した電位曲線７を曲線８の様にす
ることにより低電圧印加電極即ち第２グリツド１
３第１グリツド１２とネツク１６内壁との電位差
による初期グローを防止し、極めて耐圧特性の良
好な陰極線管用電子銃を得ることが出来る。 For this purpose, for example, as shown in FIGS. 3 and 4, a first grid 12, a second grid 13, a third grid 14, and a fourth grid 15 are installed in a network 16 of the cathode ray tube opposite to the cathode 11. Intermediate electrodes 1 of the third grid 14 of a bipotential electron gun having an integrated single-row structure, each supported at a predetermined interval through an insulating support 17.
Both ends of a semicircular conductive member 18 are fixed to one end of the insulating support 17 through fixing points 19 so as to surround the insulating support 17 in its width direction.
By adjusting the distance between the edges of the 8 and intermediate electrodes 14a and the inner wall of the neck 16, the potential curve 7 shown in FIG. 8, the low voltage applying electrode, that is, the second grid 1
3. Initial glow due to the potential difference between the first grid 12 and the inner wall of the neck 16 can be prevented, and an electron gun for a cathode ray tube with extremely good withstand voltage characteristics can be obtained.
然るに前述した構造の電子銃に於ては導電部材
１８を中間電極１４ａに溶接などで固着する場合
には第４図に示す様にほぼ半円状の２本の導電部
材をそれぞれ２個所で中間電極１４ａに固着しな
ければならないので生産性が劣り、コストアツプ
となるばかりでなく、固着時の熱変形や導電部材
１８の形状などが悪いと、電極として品位の高い
ものが得られず、また導電部材１８がネツク１６
内壁に接触するとネツク１６を破かいする恐れが
ある。 However, in the electron gun having the above-mentioned structure, when the conductive member 18 is fixed to the intermediate electrode 14a by welding or the like, two approximately semicircular conductive members are attached at two intermediate positions as shown in FIG. Since it has to be fixed to the electrode 14a, not only is productivity poor and costs increased, but also thermal deformation during fixation or poor shape of the conductive member 18 makes it impossible to obtain a high quality electrode. The member 18 is connected to the neck 16
If it comes into contact with the inner wall, there is a risk of damaging the net 16.
この対策として第５図及び第６図に示すような
構造のものが提案されている。即ち図に於て第３
図及び第４図と同一部分は同一符号をつけて説明
すると、陰極線管のネツク１６内に陰極１１に相
対設して第１グリツド１２第２グリツド１３第３
グリツド１４及び第４グリツド１５がそれぞれ２
対の絶縁支持体１７1，１７2を介して所定間隔を
持つよう支持された一体化一列配列構造を持つバ
イポテンシヤル形電子銃の前記第３グリツド１４
の中間電極１４ａのほぼ中間部に補助電極１４
a1，１４a2を設け、この補助電極１４a1，１４a2
をネツク１６内壁に近接させることにより第２図
に示した電位曲線７を曲線８のようにすることに
より低電圧印加電極即ち第２グリツド１３、第１
グリツド１２とネツク１６内壁との電位差による
初期グローを防止し、耐圧特性の良好な陰極線管
用電子銃を得ることが出来る。 As a countermeasure to this problem, a structure as shown in FIGS. 5 and 6 has been proposed. That is, the third
The same parts as those in FIG. 1 and FIG.
The grid 14 and the fourth grid 15 are each 2
The third grid 14 of the bipotential electron gun has an integrated single-row structure supported at a predetermined distance through a pair of insulating supports 17 1 and 17 2 .
An auxiliary electrode 14 is located approximately in the middle of the intermediate electrode 14a.
a 1 , 14a 2 are provided, and these auxiliary electrodes 14a 1 , 14a 2
By bringing the potential curve 7 shown in FIG. 2 closer to the inner wall of the net 16, the potential curve 7 shown in FIG.
Initial glow due to the potential difference between the grid 12 and the inner wall of the neck 16 can be prevented, and an electron gun for a cathode ray tube with good withstand voltage characteristics can be obtained.
然るに前述した構造の電子銃に於ては通常補助
電極１４a1，１４a2を絶縁支持体１７1，１７2方
向に延在させなければならず、図の様に２対即ち
計４本のビードガラスを軟化植設させなければな
らないばかりでなく、この絶縁支持体１７1，１
７2の強度も低下し、更に補助電極１４a1，１４
a2のネツク１６への対設部分が少ないため、第３
図及び第４図のものに比較し、低電圧印加電極側
に於けるネツク１６内壁の電位降下が少なくなる
欠点がある。 However, in the electron gun having the above-described structure, the auxiliary electrodes 14a 1 and 14a 2 must normally extend in the two directions of the insulating supports 17 1 and 17 , and as shown in the figure, there are two pairs of beads, or a total of four beads. Not only must the glass be softened and implanted, but this insulating support 17 1 , 1
The strength of 7 2 also decreases, and the auxiliary electrodes 14a 1 , 14
Since there are few parts connected to the net 16 of a 2 , the third
There is a drawback that the potential drop on the inner wall of the neck 16 on the low voltage application electrode side is smaller than that in FIGS.
本発明は前述した従来の欠点に鑑みなされたも
のであり、絶縁支持体の所定部分、例えば第３グ
リツドの植設部を埋設する部分を含し、この絶縁
支持体（ほぼ矩形状である）の短辺方向に帯状の
導電膜を被着形成する電子銃の製造方法に関する
ものである。 The present invention has been made in view of the above-mentioned conventional drawbacks, and includes a predetermined portion of an insulating support, such as a portion for burying the implantation portion of the third grid, and the insulating support (approximately rectangular in shape). The present invention relates to a method of manufacturing an electron gun in which a strip-shaped conductive film is deposited in the short side direction of the electron gun.
次に本発明の一実施例を第７図及び第８図を参
照して説明する。 Next, one embodiment of the present invention will be described with reference to FIGS. 7 and 8.
先ず、ビードガラスなどからなる絶縁支持体２
７の所定位置に、この絶縁支持体の短辺方向即ち
幅方向に帯状の塩化すず（SbCl4＋HCl2＋O2）か
らなるネサ液を前記絶縁支持体２７を取り囲むよ
うに塗布し、この絶縁支持体２７を加熱し、少な
くとも一主面を軟化させると前記塩化すずは酸化
すずとなり、前記絶縁支持体２７に導電膜２８が
形成される。この導電膜２８を形成した絶縁支持
体２７を図示しないスペーサ、治具により所定間
隔をもつよう仮組立てられた複数の電極、本実施
例では陰極２１、第１グリツド２２、第２グリツ
ド２３、第３グリツド２４及び第４グリツド２５
からなる電極構体の植設部に当接植設させると前
記第３グリツド２４の植設部は導電膜２８に導接
されながら植設されることになる。この様にして
形成された電子銃を陰極線管のネツク２６内に装
着すると第７図及び第８図に示す様な状態とな
り、絶縁支持体２７の断面形状を例えば円弧状な
どにすることにより、低電圧印加電極である第２
グリツド２３、第１グリツド２２に対設するネツ
ク２６内壁の電位を効果的に下げることが可能と
なり、陰極線管としての耐圧向上ばかりでなく、
その製造工程に於てもビードガラスなどからなる
絶縁支持体２７の所謂ビーデイング工程に於て、
強固な導電膜を形成する塩化第２すず（400℃に
昇温すれば酸化すずになる）のネサ膜を塗布する
工定を加えるだけでネツク２６内壁に接触するこ
ともない電子銃を提供することが出来る。 First, an insulating support 2 made of bead glass or the like is prepared.
A band-shaped Nesa liquid made of tin chloride (SbCl 4 +HCl 2 +O 2 ) is applied to a predetermined position of the insulating support 27 in the short side direction, that is, in the width direction, of the insulating support 27 so as to surround the insulating support 27. When the body 27 is heated to soften at least one main surface, the tin chloride becomes tin oxide, and a conductive film 28 is formed on the insulating support 27. The insulating support 27 on which the conductive film 28 is formed is connected to a plurality of electrodes that are temporarily assembled at predetermined intervals using a spacer (not shown) and a jig, in this embodiment, the cathode 21, the first grid 22, the second grid 23, and the second grid 23. 3rd grid 24 and 4th grid 25
When the third grid 24 is implanted in contact with the implantation portion of the electrode structure, the implantation portion of the third grid 24 is implanted while being electrically connected to the conductive film 28. When the electron gun formed in this manner is installed in the net 26 of a cathode ray tube, the state shown in FIGS. 7 and 8 will be obtained. The second electrode is a low voltage applying electrode.
It becomes possible to effectively lower the potential of the inner wall of the net 26 that is opposite to the grid 23 and the first grid 22, which not only improves the withstand voltage of the cathode ray tube, but also improves the voltage resistance of the cathode ray tube.
In the manufacturing process, the so-called beading process of the insulating support 27 made of bead glass, etc.
To provide an electron gun that does not come into contact with the inner wall of a net 26 by simply adding a coating process of a nesa film of stannic chloride (which becomes tin oxide when heated to 400°C) which forms a strong conductive film. I can do it.
次に本発明の第２の実施例を第９図及び第１０
図によつて説明する。図中第１の実施例と同一符
号は同一部分を示す。 Next, a second embodiment of the present invention is shown in FIGS. 9 and 10.
This will be explained using figures. In the figure, the same reference numerals as in the first embodiment indicate the same parts.
即ち本実施例に於てはビードガラスなどの絶縁
支持体を２対用いたものであり、従来例の第５図
及び第６図のものに対応させている。 That is, in this embodiment, two pairs of insulating supports such as bead glass are used, which corresponds to the conventional example shown in FIGS. 5 and 6.
前記絶縁支持体２７1，２７2の所定位置に酸化
すずからなる導電膜２８1，２８2を形成する工程
は同じであるので省略するが、絶縁支持体２７1，
２７2を複数対使用することにより、ビーデイン
グ工程は多少煩雑化し、それぞれの強度も低下す
る恐れはあるが、絶縁支持体２７1，２７2間の間
隔を適当な位置に配設することにより導電膜２８
１，２８2によるネツク２６内面の電位を所望値に
することが可能であり、また電子銃を軽量にする
ことも可能となる。 The process of forming the conductive films 28 1 , 28 2 made of tin oxide at predetermined positions of the insulating supports 27 1 , 27 2 is the same and will therefore be omitted;
By using multiple pairs of 27 2 , the beading process becomes somewhat complicated and there is a risk that the strength of each may decrease, but by arranging the spacing between the insulating supports 27 1 and 27 2 at an appropriate position, conductivity can be improved. membrane 28
1 and 28 2 can be set to a desired value, and it is also possible to make the electron gun lightweight.
前記実施例に於ては塩化第２すずを塗布方法に
よつて形成したがこれに限定されるものではな
く、その他塩化インジユウムを使用し加熱後酸化
インジユウムとするなど、一般に加熱により導電
性を持つような部材を塗布、吹き付け、蒸着、ス
パツタなどの方法で形成してもよいことは説明す
るまでもない。 In the above embodiment, stannic chloride was formed by a coating method, but the method is not limited to this. In addition, indium chloride is used and then heated to form indium oxide, which generally becomes conductive by heating. It goes without saying that such a member may be formed by coating, spraying, vapor deposition, sputtering, or other methods.
前述したように本発明の電子銃の製造方法によ
れば塩化第２すずのネサ膜を塗布する工程を加え
るだけで所定電極の電圧を直接導電膜に導接する
ことが可能であり、この導電膜によりネツク内壁
の電位分布を低電圧印加電極近傍に於て下げるこ
とにより初期グローを防止し、耐圧特性の良好な
電子銃を得ることが出来るので、その工業的価値
は極めて大である。 As mentioned above, according to the method for manufacturing an electron gun of the present invention, it is possible to directly connect the voltage of a predetermined electrode to a conductive film by simply adding the step of applying a Nesa film of stannic chloride, and this conductive film allows By lowering the potential distribution on the inner wall of the network in the vicinity of the low voltage application electrode, initial glow can be prevented and an electron gun with good voltage resistance characteristics can be obtained, so its industrial value is extremely large.
第１図は陰極線管のネツクに内装した電子銃の
簡略断面図、第２図はネツク内壁の電位分布を示
す説明図、第３図は従来の半円形導電部材を装着
した電子銃をネツクに内装した状態を示す正面
図、第４図は第３図のＡ―A′線に沿つて切断し
て見た断面図、第５図は従来の補助電極を装着し
た電子銃をネツクに内装した状態を示す正面図、
第６図は第５図のＢ―B′線に沿つて切断して見
た断面図、第７図は本発明の電子銃の製造方法に
よつて作られた電子銃の第１の実施例をネツクに
内装した状態を示す正面図、第８図は第７図のＣ
―C′線に沿つて切断して見た断面図、第９図は本
発明の電子銃の製造方法によつて作られた電子銃
の第２の実施例をネツクに内装した状態を示す正
面図、第１０図は第９図のＤ−D′線に沿つて切
断して見た断面図である。
１７，１７1，１７2，２７，２７1２７2……絶
縁支持体、６，１６，２６……ネツク、４，１
４，２４……第３グリツド、１８……導電部材、
１４a1，１４a2……補助電極、２８，２８1，２
８2……導電膜。
Figure 1 is a simplified cross-sectional view of an electron gun installed in the net of a cathode ray tube, Figure 2 is an explanatory diagram showing the potential distribution on the inner wall of the net, and Figure 3 is an electron gun equipped with a conventional semicircular conductive member. Fig. 4 is a cross-sectional view taken along the line A-A' in Fig. 3, and Fig. 5 is a front view showing the internal state, and Fig. 5 shows the interior of the electron gun equipped with a conventional auxiliary electrode. Front view showing the condition,
FIG. 6 is a cross-sectional view taken along line BB' in FIG. 5, and FIG. 7 is a first embodiment of an electron gun manufactured by the electron gun manufacturing method of the present invention. Figure 8 is a front view showing the state in which the
- A sectional view taken along the line C', and FIG. 9 is a front view showing the second embodiment of the electron gun manufactured by the method of manufacturing an electron gun of the present invention installed inside the net. 10 are cross-sectional views taken along line D-D' in FIG. 9. 17,17 1 ,17 2 ,27,27 1 27 2 ...Insulating support, 6,16,26 ...Net, 4,1
4, 24...Third grid, 18...Conductive member,
14a 1 , 14a 2 ... auxiliary electrode, 28, 28 1 , 2
8 2 ... Conductive film.
Claims (1)
絶縁支持体の短辺方向に帯状の加熱により導電性
を持つような部材を前記絶縁支持体を取り囲むよ
うに形成する工程と、前記絶縁支持体を加熱し、
この絶縁支持体の少なくとも一主面を軟化させ、
スペーサ、治具により所定間隔をもつよう仮組立
てられた複数の電極からなる電極構体の植設部に
前記絶縁支持体を当接植設させる工程とからな
り、前記絶縁支持体の加熱時に前記帯状の加熱に
より導電性を持つような部材に導電性を持たせる
と共に前記導電性を持たせた部材に前記複数の電
極のうち、少なくとも１個の電極の植設部を導接
させるようにしたことを特徴とする電子銃の製造
方法。1. Forming a band-shaped member that becomes conductive by heating in a predetermined position of a substantially rectangular insulating support in the short side direction of the insulating support so as to surround the insulating support; heats the body,
softening at least one main surface of the insulating support;
The step of implanting the insulating support in contact with the implantation portion of an electrode structure consisting of a plurality of electrodes temporarily assembled with a predetermined interval using a spacer and a jig, and when heating the insulating support, the strip-shaped The conductive member is made conductive by heating, and the implanted part of at least one of the plurality of electrodes is electrically connected to the conductive member. A method for manufacturing an electron gun characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP337479A JPS5596534A (en) | 1979-01-18 | 1979-01-18 | Manufacturing method of electron gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP337479A JPS5596534A (en) | 1979-01-18 | 1979-01-18 | Manufacturing method of electron gun |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5596534A JPS5596534A (en) | 1980-07-22 |
| JPS6321291B2 true JPS6321291B2 (en) | 1988-05-06 |
Family
ID=11555567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP337479A Granted JPS5596534A (en) | 1979-01-18 | 1979-01-18 | Manufacturing method of electron gun |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596534A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2797379B2 (en) * | 1989-03-13 | 1998-09-17 | 松下電器産業株式会社 | Disk playing device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567400A (en) * | 1983-02-28 | 1986-01-28 | Rca Corporation | CRT Comprising metallized glass beads for suppressing arcing therein |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53126465U (en) * | 1977-03-09 | 1978-10-07 |
-
1979
- 1979-01-18 JP JP337479A patent/JPS5596534A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2797379B2 (en) * | 1989-03-13 | 1998-09-17 | 松下電器産業株式会社 | Disk playing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5596534A (en) | 1980-07-22 |
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