JPS63208290A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS63208290A JPS63208290A JP4023187A JP4023187A JPS63208290A JP S63208290 A JPS63208290 A JP S63208290A JP 4023187 A JP4023187 A JP 4023187A JP 4023187 A JP4023187 A JP 4023187A JP S63208290 A JPS63208290 A JP S63208290A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000005530 etching Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 description 57
- 238000000034 method Methods 0.000 description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 230000010355 oscillation Effects 0.000 description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 201000009310 astigmatism Diseases 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 5
- 230000007017 scission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体レーザの構造に係り、特に民生用におい
て要求される高出力半導体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a semiconductor laser, and particularly to a high-power semiconductor laser required for consumer use.
光ディスク等、光情報機器の光源として１発振波長７８
０〜８３０ｎｍの縦単一モードで、非点収差の無い半導
体レーザが要求されている。これらの要求を満足するも
のとして、自己整合型半導体レーザ装置が有力な候補で
ある。しかしながら、この自己整合型半導体レーザ装置
は、２回成長により作製するため、成長界面の結晶性不
良が問題となった。従来、この問題の解決方法として、
溝ストライプ形成時に大気中に露出するストライプ底部
を、隣接したクラッド層よりＡｌモル比の小さい半導体
層すなわち、界面改良層で形成した自己整合型半導体レ
ーザが、吉沢らにより、１９８６年（昭和６１年）秋季
第４７回応用物理学会学術講演予稿集Ｐ１６０ （講演
番号２７Ｐ−Ｔ−Ｂ）において、報告されている。One oscillation wavelength of 78 as a light source for optical information equipment such as optical disks.
There is a demand for a semiconductor laser with a longitudinal single mode of 0 to 830 nm and no astigmatism. A self-aligned semiconductor laser device is a promising candidate for meeting these requirements. However, since this self-aligned semiconductor laser device is manufactured by two-step growth, poor crystallinity at the growth interface has become a problem. Traditionally, the solution to this problem was to
In 1986, Yoshizawa et al. developed a self-aligned semiconductor laser in which the bottom of the stripe exposed to the atmosphere during groove stripe formation was formed with a semiconductor layer having a lower Al molar ratio than the adjacent cladding layer, that is, an interface improvement layer. ) It is reported in the autumn 47th Japan Society of Applied Physics academic lecture proceedings P160 (lecture number 27P-T-B).
上記従来技術による。界面改良層を有する自己整合型半
導体レーザ装置の構造図を第２図（ａ）に、接合面に垂
直な方向の光強度分布を第２図（ｂ）に示す。ｐ型Ｇａ
Ａ Ｑ Ａｓクラッド層側のみにＡｌモル比の低いすな
わち屈折率がｐ型ＧａＡ Ｑ Ａｓクラッド層より大き
い界面改良層を設けているため光が、界面改良層へとし
み出し、光強度分布が、ｐ側へ片寄る。すなわち、接合
面に垂直な方向の光強度分布が非対称となり、活性層へ
の光導波が、効率よくは行われていない。したがって、
しきい値電流が大きくなり、信頼性にも影響していた。Based on the above conventional technology. FIG. 2(a) shows a structural diagram of a self-aligned semiconductor laser device having an interface improvement layer, and FIG. 2(b) shows a light intensity distribution in a direction perpendicular to the bonding surface. p-type Ga
Since an interface improvement layer with a low Al molar ratio, that is, a larger refractive index than the p-type GaA Q As cladding layer is provided only on the A Q As cladding layer side, light seeps into the interface improvement layer and the light intensity distribution is Move to the side. That is, the light intensity distribution in the direction perpendicular to the bonding surface becomes asymmetrical, and optical waveguide to the active layer is not performed efficiently. therefore,
The threshold current increased, which affected reliability.
本発明の目的は、接合面に垂直な方向の光強度分布を対
称とし、活性層への先導波を効率よく行うことにより、
しきい値電流の小さい、高信頼性の素子を提供すること
にある。The purpose of the present invention is to make the light intensity distribution symmetrical in the direction perpendicular to the bonding surface and to efficiently conduct the leading wave to the active layer.
The object of the present invention is to provide a highly reliable element with a small threshold current.
上記目的は、第１図（ａ）に示すように、ｎ型クラッド
層側にも、界面改良層と同様に、Ａｌモル比の小さい層
、すなわち、ｎ型クラッド層よりも屈折率の大きい層で
ある光強度分布補正層を設けることにより、達成される
。As shown in FIG. 1(a), the above purpose is to create a layer with a small Al molar ratio, that is, a layer with a higher refractive index than the n-type cladding layer, on the n-type cladding layer side, similarly to the interface improvement layer. This is achieved by providing a light intensity distribution correction layer.
第１図（ａ）に、本発明による構造の一例を。 FIG. 1(a) shows an example of the structure according to the present invention.
第１図（ｂ）に、接合面に垂直な方向の光強度分布を示
す。ｎ −ＧａＡ Ｑ Ａｓ第１クラツド２とｎ−Ｇａ
Ａ １１ Ａｓ第２クラツド４の間に光強度分布補正層
３を設けることにより、接合面に垂直な方向の光強度分
布が対称となる。したがって、活性層への先導波を効率
よく行うことが可能となり、しきｕＮＮ雷電流低い、高
倍調性の素子を得ることができる。FIG. 1(b) shows the light intensity distribution in the direction perpendicular to the bonding surface. n-GaA Q As first clad 2 and n-Ga
By providing the light intensity distribution correction layer 3 between the A 11 As second cladding 4, the light intensity distribution in the direction perpendicular to the bonding surface becomes symmetrical. Therefore, it becomes possible to efficiently conduct the leading wave to the active layer, and it is possible to obtain a highly harmonic device with a low uNN lightning current.
以下１本発明の実施例を詳細に説明する。 Hereinafter, one embodiment of the present invention will be described in detail.
実施例１ 第１図を用いて説明する。Example 1 This will be explained using FIG.
ｎ型Ｇ ａ Ａ ｓ基板１上に、ｎ型Ｇ ａｖ−ｘＡＱ
ｘ Ａ ｓ第１クラッド層２ （ｘ＝０．３７ ）、
ｎ型Ｇ ａ １−２Ａ Ｑ ｚ Ａ ｓ光強度分布補正
層３ （ｚ＝０．２）、ｎ型Ｇａ１−ｕＡｆｉｕＡｓ第
２クラッド層４（ｕ＝０．３７ ） 、Ｇａｘ−ｙＡＱ
ｙＡｓ活性ｆｆ５（ｙ＝０．０８ ）、ｐ型Ｇ ａ ｔ
−ｖＡ Ｑ ｖＡ ｓクラッド層６（ｖ＝０．３７ ）
、ｐ型Ｇ ａ ｔ−ｗＡ Ｑ ｗＡ ｓ界面改良層７
（ｗ＝０．２ ）、ｎ型ＧａＡｓ電流狭窄層８をＭＯＣ
ＶＤ法により順次形成する。この時。On the n-type Ga As substrate 1, the n-type G av-xAQ
x As first cladding layer 2 (x=0.37),
n-type Ga1-2A QzAs light intensity distribution correction layer 3 (z=0.2), n-type Ga1-uAfiuAs second cladding layer 4 (u=0.37), Gax-yAQ
yAs activity ff5 (y=0.08), p-type Ga t
-vA Q vA s cladding layer 6 (v=0.37)
, p-type Ga t-wA Q wA s interface improvement layer 7
(w=0.2), the n-type GaAs current confinement layer 8 is
They are formed sequentially by the VD method. At this time.
ｎ型Ｇ ａ Ｌ−ｕ Ａ Ｑ ｕ Ａ ８第２クラッド
層４の膜厚と、ｐ型Ｇ ａ Ｌ−ｗ Ａ Ｑ ｖ Ａ
Ｓクラッド層６の膜厚は等しくなるようにする。また、
ｎ型Ｇ ａ １−ＺＡ Ｑ ｚＡ ｓ光強度分布補正量
３と、ｐ型Ｇ ａ １−ｗ Ａ Ｑ ｗ Ａ ｓ界面改
良層７の膜厚も等しくなるようにする。その後、ホトエ
ツチング工程により、ｎ型Ｇ ａ Ａ ｓ ｆｆｔ流狭
窄層８を完全に除去しｐ型Ｇａｚ−ｗＡＱｗＡｓ界面改
良層７の表面を露出する幅１〜１５μｍの溝ストライプ
を形成する。次にＭＯＣＶＤ法によりｐ型Ｇ ａ １−
ｔ Ａ Ｑ ｔ Ａ ｓ埋込みクラッド層９ （ｔ＝０
．３７ ）、ｐ型Ｇ ａ Ａ ｓキャップ層１０を形成
する。この後、ｐ側電極１１．ｎ＠電Ｖｉ１２を形成し
た後、へき開法により、共振器長約３００μｍのレーザ
素子を得た。Thickness of n-type Ga L-u A Q u A 8 second cladding layer 4 and p-type Ga L-w A Q v A
The thickness of the S cladding layer 6 is made equal. Also,
The n-type Ga 1-ZA Q z As light intensity distribution correction amount 3 and the film thickness of the p-type Ga 1-w A Q w As interface improvement layer 7 are also made equal. Thereafter, by a photoetching process, the n-type GaAs fft flow constriction layer 8 is completely removed to form groove stripes with a width of 1 to 15 μm exposing the surface of the p-type Gaz-wAQwAs interface improvement layer 7. Next, p-type Ga 1-
t A Q t A s Buried cladding layer 9 (t=0
．． 37), forming a p-type GaAs cap layer 10; After this, the p-side electrode 11. After forming n@electronic Vi12, a laser element with a cavity length of about 300 μm was obtained by a cleavage method.
試作した素子は、発振波長８３０ｎｍにおいて、しきい
電流値３０〜４０ｍＡで室側連続発振し、発振スペクト
ルは、安定な縦単一モードであった。The prototype device oscillated continuously on the chamber side at a threshold current value of 30 to 40 mA at an oscillation wavelength of 830 nm, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における電流の立上り電圧は１．３Ｖ 、素子抵抗１．
５Ω といった良好な電気特性も得られた。さらに、７
０℃において、光出力４０ｍＷ定光出力動作時の寿命も
、２０００時間経過後も顕著な劣化は見られず、信頼性
も高いことが明らかとなった。Also, there was no astigmatism at all. In addition, the current rise voltage in the current-voltage characteristics is 1.3V, and the element resistance is 1.3V.
Good electrical properties of 5Ω were also obtained. Furthermore, 7
At 0° C., no significant deterioration was observed even after 2000 hours of operation at a constant light output of 40 mW, and it was revealed that the reliability was high.
実施例２
本発明の第２の実施例を、第３図を用いて、詳細に説明
する。Example 2 A second example of the present invention will be described in detail with reference to FIG.
ｎ型Ｇ ａ Ａ ｓ １基板上に、ｎ型Ｇ ａ ｔ−ｘ
Ａ Ｑ ｘ Ａ ｓ第１クラッド層２（ｘ＝０．３７
）、ｎ型Ｇ ａ ｘ−ｚ Ａ Ｑ Ｚ Ａ Ｓ光強度分
布補正層３ （ｚ ＝０．２０）、ｎ型Ｇ ａ ｔ−ｕ
Ａ Ｑ ｕＡ ｓ第２クラッドＪｆｉ４（ｕ＝０．３７
）、Ｇａｔ−ｙＡＱｙＡｓ活性層５（ｙ＝０．０６）
、ｐ型Ｇ ａ １−ＶＡ Ｑ ＶＡ Ｓクラッド層６（
ｖ＝０．３７ ） 、Ｐ型Ｇａｔ−ｗＡｌ２ｗＡｓ界面
改良Ｍ’ｌ （ｗ＝０．２０ ）、ｎ型Ｇ ａ Ａ ｓ
電流狭窄層８を、ＭＯＣＶＤ法により順次形成するにの
時、ｐ型Ｇ ａ １−ｗ Ａ Ｑ ｗ Ａ ｓ界面改良
層７の膜厚はｎ型Ｇ ａ １−ＺＡ Ｑ ｚＡ ｓ光強
度分布補正層３の膜厚よりも厚くなるようにする。その
後、ホトエツチング工程により、ｎ型ＧａＡｓ電流狭窄
層８を完全に除去しｐ型Ｇ ａ １−ｗ Ａ Ｑ ｗ
Ａ ｓ界面改良層７の表面を露出する幅１〜１５μｍの
溝ストライプを形成する。次にＭＯＣＶＤ法によりｐ型
Ｇ ａ ｚ−ｔＡ Ｑ ｔＡ ｓ埋込みクラッド［９（
ｔ＝０．５）、ｐ型Ｇ ａ Ａ ｓキャップ層１０を形
成する。この後、ｐ側電極１１．ｎ側電極１２を形成し
た後、へき開法により、共振器長約３００μｍのレーザ
素子を得た。なお、本実施例においては、ｐ型Ｇ ａ
１−ｗ Ａ Ｑ ｗ Ａ Ｓ界面改良層７の膜厚を、ｎ
型Ｇ ａ １−ｚ Ａ Ｑ ｚ Ａ Ｓ光強度分布補正
層３よりも厚くしであるため、ホトエツチング工程にお
いて、エツチングの深さの制御の要求が、実施例１と比
較して、甘くなるため、実施例１よりも歩留りよく素子
が得られた。また、上述したように、ｐ型Ｇ ａ １−
Ｗ Ａ Ｑ ｗ Ａ Ｓ界面改良層７の膜厚を光強度分
布補正層３よりも厚くしているためｐ型埋込みクラッド
９の半導体層を、屈折率の小さい層とした。On the n-type Ga As 1 substrate, the n-type Ga t-x
A Q x A s first cladding layer 2 (x=0.37
), n-type G a x-z A Q Z A S light intensity distribution correction layer 3 (z = 0.20), n-type G a tu
A Q uA s2nd cladding Jfi4 (u=0.37
), Gat-yAQyAs active layer 5 (y=0.06)
, p-type Ga 1-VA Q VA S cladding layer 6 (
v=0.37), P-type Gat-wAl2wAs interface improvement M'l (w=0.20), n-type GaAs
When the current confinement layer 8 is sequentially formed by the MOCVD method, the thickness of the p-type Ga 1-w A Q w As interface improvement layer 7 is determined by adjusting the n-type Ga 1-ZA Q z As light intensity distribution. The film thickness should be greater than that of layer 3. Thereafter, the n-type GaAs current confinement layer 8 is completely removed by a photoetching process, and the p-type GaAs current confinement layer 8 is completely removed.
Groove stripes with a width of 1 to 15 μm exposing the surface of the As interface improvement layer 7 are formed. Next, a p-type G az-tA QtAs embedded cladding [9(
t=0.5), and a p-type GaAs cap layer 10 is formed. After this, the p-side electrode 11. After forming the n-side electrode 12, a laser element with a cavity length of about 300 μm was obtained by a cleavage method. Note that in this example, p-type Ga
1-w A Q w A The film thickness of the S interface improvement layer 7 is n
Since the type G a 1-z A Q z A S is thicker than the light intensity distribution correction layer 3, the requirements for controlling the etching depth in the photoetching process are less strict than in Example 1. , devices were obtained with better yield than in Example 1. Moreover, as mentioned above, p-type Ga 1-
Since the thickness of the W A Q w A S interface improvement layer 7 is made thicker than the light intensity distribution correction layer 3, the semiconductor layer of the p-type buried cladding 9 is made to be a layer with a small refractive index.
これにより、第３図（ｂ）に示すように、対称性の良い
光強度分布の素子が得られた。As a result, an element with a well-symmetrical light intensity distribution was obtained, as shown in FIG. 3(b).
試作した素子は１発振波長８３０ｎｍにおいて、しきい
電流値３０〜４０ ｍ Ａで室温連続発振し、発振スペ
クトルは、安定な縦単一モードであった。The prototype device oscillated continuously at room temperature at a threshold current value of 30 to 40 mA at a single oscillation wavelength of 830 nm, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における電流の立上り電圧は１．３Ｖ 、素子抵抗１．
５Ω といった良好な電気特性も得られた。さらに、７
０℃において、光出力４０ｍＷ定光出力動作時の寿命も
、２０００時間経過後も顕著な劣化は見られず、信頼性
も高いことが明らかになった。Also, there was no astigmatism at all. In addition, the current rise voltage in the current-voltage characteristics is 1.3V, and the element resistance is 1.3V.
Good electrical properties of 5Ω were also obtained. Furthermore, 7
At 0° C., no significant deterioration was observed even after 2000 hours of operation at a constant light output of 40 mW, indicating high reliability.
実施例３
本発明の第３の実施例を、第４図を用いて、詳細に説明
する。Example 3 A third example of the present invention will be described in detail using FIG. 4.
ｎ型Ｇ ａ Ａ ｓ基板１上に、ｎ型Ｇａｔ−ｘＡ Ｑ
ＸＡＳ第１クラッド層２（ｘ＝０．３７）、ｎ型Ｇ
ａ １−ｚＡＱ ｚ Ａ ｓ光強度分布補正層３（ｚ＝
０．２）、ｎ型Ｇ ａ １−１１Ａ Ｑ ｕＡ ｓ第２
クラッド層４（ｕ＝０．３７ ） 、 Ｇ ａＬ−ｙＡ
ＱｙＡ ｓ活性ＷＪ５ （ｙ＝０．０６ ）、ｐ型Ｇ
ａ ｔ−ｖ Ａ Ｑ ｖ Ａ Ｓクラッド層６（ｖ＝
０．３７ ）、ｐ型Ｇ ａ １−Ｗ Ａ Ｑ ｗ Ａ
ｓ界面改良層７ （ｗ＝０．２ ） 、ｎ型ＧａＡｓｆ
ｆ１流狭窄層８をＭＯＣＶＤ法により順次形成する。こ
の時、ｐ型Ｇａｚ−ｗＡＱｗＡｓ界面改良層７の膜厚を
、ｎ型Ｇａｚ−ｚＡＱｚＡｓ光強度分布補正層３の膜厚
よりも厚くなるようにする。また、ｐ型
Ｇ ａ １．、、ｖ Ａ Ｑ ｖ Ａ ｓクラッド層６
の膜厚を、ｎ型Ｇ ａ ｚ−ｕＡ ＱｕＡ ｓ第２クラ
ッド層４の膜厚よりも厚くなるようにする。その後、ホ
トエツチング工程により、ｎ型ＧａＡｓ電流狭窄層８を
完全に除去しｐ型Ｇ ａ ｚ−ｗＡ Ｑ ｗＡ ｓ界面
改良層７の表面を露出する幅１〜１５μｍの溝ストライ
プを形成する。次にＭＯＣＶＤ法により、ｐ型Ｇａ５−
ｔＡ Ｑ ｔＡｓ埋込みクラッド層９ （ｔ＝０．３７
）、ｐ型ＧａＡｓキャップ層１０を形成する。この後
、ｐ （Ｉｌｌ電極１１、ｎ側電極１２を形成した後、
へき開法により、共振器長約３００μｍのレーザ素子を
得た。On the n-type GaAs substrate 1, the n-type Gat-xA Q
XAS first cladding layer 2 (x=0.37), n-type G
a 1-zAQ z A s Light intensity distribution correction layer 3 (z=
0.2), n-type Ga 1-11A Q uA s second
Cladding layer 4 (u=0.37), GaL-yA
QyAs active WJ5 (y=0.06), p-type G
a tv A Q v A S cladding layer 6 (v=
0.37), p-type G a 1-W A Q w A
s interface improvement layer 7 (w=0.2), n-type GaAsf
The f1 flow constriction layer 8 is sequentially formed by MOCVD. At this time, the thickness of the p-type Gaz-wAQwAs interface improvement layer 7 is set to be thicker than the thickness of the n-type Gaz-zAQzAs light intensity distribution correction layer 3. In addition, p-type Ga 1. ,, v A Q v A s cladding layer 6
The film thickness of the n-type G az-uA QuAs second cladding layer 4 is made thicker than that of the n-type G az-uA QuAs second cladding layer 4 . Thereafter, by a photo-etching process, the n-type GaAs current confinement layer 8 is completely removed to form groove stripes with a width of 1 to 15 μm exposing the surface of the p-type G az-wA Q wAs interface improvement layer 7 . Next, by MOCVD method, p-type Ga5-
tA Q tAs buried cladding layer 9 (t=0.37
), a p-type GaAs cap layer 10 is formed. After this, p (after forming the Ill electrode 11 and the n-side electrode 12,
A laser device with a cavity length of about 300 μm was obtained by the cleavage method.
なお、本実施例においては、実施例２と同様に。Note that in this embodiment, the same as in the second embodiment.
ｐ型Ｇ ａ １−ＩＦ Ａ Ｑ ｗ Ａ ｓ界面改良層
７の膜厚を、ｎ型Ｇ ａ １−２ Ａ Ｑ ｚ Ａ ｓ
光強度分布補正層３の膜厚よりも厚くしであるため、実
施例１よりも歩留り良く素子が得られた。また、ｐ型Ｇ
ａ １−Ｖ Ａ Ｑ ｖ Ａ ＳクラッドＷＪ６の膜
厚を、ｎ型Ｇａｔ−ｕＡＱｕＡｓ第２クラッド層４の膜
厚よりも厚くしているため、ｐ型Ｇ ａ ｔ−ｔＡ ｆ
ｌ ｗＡ ｓ界面改良層７の膜厚を、ｎ型Ｇ ａ １−
ｚ Ａ Ｑ ｚ Ａ ９光強度分布補正層３の膜厚より
厚くしていることに起因する光強度分布の非対称はない
。すなわち、第４図（ｂ）に示すような、光強度分布の
対称性の良いの素子が得られた。The thickness of the p-type Ga 1-IF A Q w As interface improvement layer 7 is changed from that of the n-type Ga 1-2 A Q z As
Since the film thickness was thicker than that of the light intensity distribution correction layer 3, a device was obtained with a higher yield than in Example 1. Also, p-type G
a 1-V A Q v AS Since the film thickness of the S cladding WJ6 is made thicker than the film thickness of the n-type Gat-uAQuAs second cladding layer 4, the p-type Ga t-tA f
The thickness of the interface improvement layer 7 is set to n-type Ga 1-
z A Q z A 9 There is no asymmetry in the light intensity distribution due to the film being thicker than the light intensity distribution correction layer 3. That is, an element with good symmetry of the light intensity distribution as shown in FIG. 4(b) was obtained.
試作した素子は１発振波長８３０ｎｍにおいて、しきい
電流値３０〜４０ｍＡで室温連続発振し、発振スペクト
ルは、安定な縦単一モードであった。The prototype device oscillated continuously at room temperature at a threshold current value of 30 to 40 mA at a single oscillation wavelength of 830 nm, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における電流の立上り電圧は１．３Ｖ 、素子抵抗は１
．５Ω といった良好な電気特性も得られた。さらに、
７０℃において、光出力４０ｍＷ定光出力動作時の寿命
も、２０００時間経過後も顕著な劣化は見られず、信頼
性も高いことが明らかになった。Also, there was no astigmatism at all. In addition, the current rise voltage in the current-voltage characteristics is 1.3V, and the element resistance is 1.
．． Good electrical properties of 5Ω were also obtained. moreover,
At 70° C., no significant deterioration was observed even after 2000 hours of operation at a constant light output of 40 mW, and it was revealed that the reliability was high.
実施例４
本発明の第４の実施例を、第５図を用いて、詳細に説明
する。Example 4 A fourth example of the present invention will be described in detail using FIG. 5.
ｎ型Ｇ ａ Ａ ｓ基板１上に、ｎ型Ｇ ａｌ−ｘ Ａ
Ｑ ｘ Ａ ｓ第１クラッド５２ （ｘ＝０．５０
）、ｎ型Ｇ ａ １−ｚＡ Ｑ ｚＡ ｓ光強度補正層
３（ｚ＝０．２）、ｎ型Ｇａｚ−ｕＡｕｕＡｓ第２クラ
ッド層４（ｕ＝０．３７ ） 、Ｇ ａｓ−ｙＡ Ｑｙ
Ａ ｓ活性層５（ｙ＝０．０６）、Ｐ型Ｇａ１−ｖＡＱ
ｖＡｓクラッド層６（ｖ＝０．３７ ）、ｐ型Ｇ ａ
ニーｗ Ａ Ｑ ｗ Ａ ｓ界面改良層７ （ｗ＝０．
２ ） 、ｎ型ＧａＡｓ電流狭窄層８をＭＯＣＶＤ法に
より順次形成する。この時。On the n-type Ga As substrate 1, the n-type Gal-x A
Q x A s first cladding 52 (x=0.50
), n-type Ga 1-zA Q zA s light intensity correction layer 3 (z=0.2), n-type Gaz-uAuuAs second cladding layer 4 (u=0.37), Gas-yA Qy
As active layer 5 (y=0.06), P-type Ga1-vAQ
vAs cladding layer 6 (v=0.37), p-type Ga
Knee w A Q w A s Interface improvement layer 7 (w=0.
2) An n-type GaAs current confinement layer 8 is sequentially formed by MOCVD. At this time.
ｎ型Ｇ ａ １−ｚ Ａ Ｑ ｚ Ａ ｓ光強度補正層
３の膜厚とｐ型Ｇ ａ １−ａｌ Ａ Ｑ ｗ Ａ ｓ
界面改良層７の膜厚は等しくなるようにする。また、ｎ
型Ｇ ａ １−ｕ Ａ Ｏｕ Ａ ｓ第２クラッド層４
の膜厚とｐ型Ｇａニー、Ａｌ１．Ａｓ界面改良層７の膜
厚も等しくなるようにする。その後、ホトエツチング工
程により、ｎ型Ｇ ａ Ａ ｓ電流狭窄層８を完全に除
去しｐ型Ｇａ１−ＡαｗＡｓ界面改良層７の表面を露出
させる幅１〜１５μｍの溝ストライプを形成する。次に
ＭＯＣＶＤ法により、ｐ型Ｇ ａ １−ｔＡ Ｑ ｔＡ
ｓ埋込みクラッド層９（ｔ＝０．５ ） 、ｐ型Ｇ
ａ Ａ ｓキャップ層１０を形成する。この後、ｐ側電
極１１．ｎ側電ｔｆ！１２を形成した後、八き開法によ
り、共振器長約３００μｍのレーザ素子を得た。Thickness of n-type G a 1-z A Q z A s light intensity correction layer 3 and p-type G a 1-al A Q w A s
The thickness of the interface improvement layer 7 is made equal. Also, n
Type G a 1-u A Ou As second cladding layer 4
The film thickness of p-type Ga, Al1. The thickness of the As interface improving layer 7 is also made equal. Thereafter, by a photoetching process, the n-type GaAs current confinement layer 8 is completely removed to form groove stripes with a width of 1 to 15 μm that expose the surface of the p-type Ga1-AαwAs interface improvement layer 7. Next, by MOCVD method, p-type Ga 1-tA Q tA
s-buried cladding layer 9 (t=0.5), p-type G
a As cap layer 10 is formed. After this, the p-side electrode 11. N side electric tf! After forming 12, a laser element with a cavity length of about 300 μm was obtained by the octagonal method.
本実施例においては、ｎ型Ｇ ａ １−３ＩＡ Ｑ ｘ
Ａ ｓ第１クラッド層２、及び、ｐ型Ｇ ａ ｚ−ｔＡ
Ｑ ｔＡ ｓ埋込みクラッド層９の屈折率を、ｎ型Ｇ
ａ１−ｕＡ Ｑ ｕＡｓ第２クラッド層４及びｐ型Ｇ
ａ １−ｖ Ａ Ｑ ｖ Ａ ８クラッド層６の屈折率
よりかさくしであるため、第５図（ｂ）に示すように、
ｎ型Ｇ ａ ｓ−ｚ Ａ Ｑ ２ Ａ ｓ光強度補正層
３及び、ｐ型Ｇ ａ Ｌ−Ｗ Ａ Ｑ ｗ Ａ ｓ界面
改良層７への光のしみ出しが小さくなる。したがって、
活性層への光の導波がさらに効率よく行われる。また、
接合面に垂直方向の屈折率分布が活性層に対し、完全に
対称となっているため、光強度分布も、完全に対称にな
っている。In this example, n-type Ga 1-3IA Q x
A s first cladding layer 2 and p-type G az-tA
Q tA s The refractive index of the buried cladding layer 9 is set to n-type G
a1-uA Q uAs second cladding layer 4 and p-type G
a 1-v A Q v A 8 Since the refractive index is lower than that of the cladding layer 6, as shown in FIG. 5(b),
Light seepage into the n-type Ga s-z A Q 2 As light intensity correction layer 3 and the p-type Ga L-W A Q w As interface improvement layer 7 is reduced. therefore,
Light is guided to the active layer more efficiently. Also,
Since the refractive index distribution in the direction perpendicular to the bonding surface is completely symmetrical with respect to the active layer, the light intensity distribution is also completely symmetrical.
試作した素子は、発振波長８３０ｎｍにおいて、しきい
電流値３０〜３５ｍＡで室温連続発振し、発振スペクト
ルは、安定な縦単一モードであった。The prototype device oscillated continuously at room temperature at an oscillation wavelength of 830 nm with a threshold current value of 30 to 35 mA, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における、電流の立上り電圧は１．３ｖ、素子抵抗１．
５Ω といった良好な電気特性も得られた６さらに７０
℃において、光出力４０ｍＷ定光出力動作時の寿命も、
２０００時間経過後も顕著な劣化は見られず、信頼性も
高いことが判明した。Also, there was no astigmatism at all. Also, in the current-voltage characteristics, the current rising voltage is 1.3V, and the element resistance is 1.3V.
Good electrical properties such as 5Ω were also obtained6 and 70
The lifespan when operating at a constant light output of 40 mW at ℃ is also
No significant deterioration was observed even after 2000 hours, and the reliability was found to be high.
実施例５
本発明の第５の実施例を、第６図を用いて、詳細に説明
する。Example 5 A fifth example of the present invention will be described in detail using FIG. 6.
ｎ型Ｇ ａ Ａ ｓ基板１上に、ｎ型Ｇａ１−ｘＡ Ｑ
ｘＡｓ第１クラッド層２ （ｘ＝０．５ ）、ｎ型Ｇ
ａ １−Ｚ Ａ Ｑ ｚ Ａ ｓ光強度分布補正層３
（ｚ ＝０．２）、ｎ型Ｇ ａ １−ｕ Ａ Ｑ ｕ
Ａ Ｓ第２クラッド層４（ｕ＝０．３７ ） 、 Ｇ
ａｔ−ｙＡ ＱｙＡ ｓ活性層５（ｙ＝０、ｏ６）、
ｐ型Ｇ ａ １−ｖ Ａ ｎ ｖ Ａ ８クラッド層６
（ｖ ＝０．３７ ） 、 Ｐ型Ｇ ａ １−ｗ Ａ
Ｑ ｗ Ａ ｓ界面改良層７ （ｗ＝０．２ ）、ｎ型
ＧａＡｓ１！流狭窄層８をＭＯＣＶＤ法により順次形成
する。この時、ｐ型Ｇ ａ １−ＩＴ Ａ Ｑ ｗ Ａ
Ｓ界面改良層７の膜厚を、ｎ型Ｇ ａ ｔ−ｚ Ａ
Ｑ ｚ Ａ ｓ光強度分布補正層３の膜厚よりも厚くな
るようにする。また、ｐ型
Ｇ ａ ｔ−ｖＡ Ｑ ｖＡ ｓクラッド層６の膜厚を
、ｎ型Ｇ ａ ｚ−ｕ Ａ ｎ ｕ Ａ ｓ第２クラッ
ド層４の膜厚よりも厚くなるようにする。その後、ホト
エツチング工程により、ｎ型Ｇ ａ Ａ ｓ電流狭窄層
８を完全に除去しｐ型Ｇ ａ １−ＷＡ Ｑ ｗＡ ｓ
界面改良層７の表面を露出する幅１〜１５μｍの溝スト
ライプを形成する。次にＭＯＣＶＤ法によりｐ型Ｇａｔ
−ｔＡ Ｑ ｔ、Ｌｓ埋込みクラッド５ｇ （ｔ＝０．
５ ）、ｐ型Ｇ ａ Ａ ｓキャップ層１０を形成する
。この後、ｐ側電極１１、ｎ側電極１２を形成した後、
へき開法により、共振器長約３００μｍのレーザ素子を
得た。On the n-type Ga As substrate 1, the n-type Ga1-xA Q
xAs first cladding layer 2 (x=0.5), n-type G
a 1-Z A Q z A s Light intensity distribution correction layer 3
(z = 0.2), n-type Ga 1-u A Q u
A S second cladding layer 4 (u=0.37), G
at-yA QyA s active layer 5 (y=0, o6),
p-type Ga 1-v A n v A 8 cladding layer 6
(v = 0.37), P type Ga 1-w A
Q w As interface improvement layer 7 (w=0.2), n-type GaAs 1! Flow constriction layers 8 are sequentially formed by MOCVD. At this time, p-type Ga 1-IT A Q w A
The film thickness of the S interface improvement layer 7 is
The thickness of the Q z A s light intensity distribution correction layer 3 should be greater than that of the light intensity distribution correction layer 3 . Further, the film thickness of the p-type Ga t-vA QvAs cladding layer 6 is made thicker than the film thickness of the n-type GazuAnuAs second cladding layer 4. Thereafter, the n-type GaAs current confinement layer 8 is completely removed by a photoetching process, and the p-type GaAs current confinement layer 8 is completely removed.
Groove stripes with a width of 1 to 15 μm exposing the surface of the interface improvement layer 7 are formed. Next, by MOCVD method, p-type Ga
-tA Q t, Ls embedded cladding 5g (t=0.
5) Form a p-type GaAs cap layer 10. After this, after forming the p-side electrode 11 and the n-side electrode 12,
A laser device with a cavity length of about 300 μm was obtained by the cleavage method.
なお、本実施例においては、実施例２と同様に。Note that in this embodiment, the same as in the second embodiment.
ｐ型Ｇ ａ ｔ−ｗＡ Ｑ ｗＡ Ｓ界面改良層７の膜
厚をｎ型Ｇ ａ １−２ Ａ Ｑ ２ Ａ ｓ光強度分
布補正層３の膜厚より厚くしているため、実施例１及び
実施例４より歩留りが良く、また、実施例３と同様にｐ
型Ｇ ａ １−ｖＡ Ｑ ＶＡ Ｓクラッド層６の膜厚
を、ｎ型Ｇ ａ １−ｕ Ａ Ｑ ｕ Ａ ｓ第２クラ
ッド層４の膜厚よりも厚くしているため、光強度分布の
非対称性はない。Since the film thickness of the p-type Ga t-wA Q wA S interface improvement layer 7 is made thicker than the film thickness of the n-type Ga 1-2 A Q 2 As light intensity distribution correction layer 3, the The yield is better than in Example 4, and as in Example 3, p
Since the film thickness of the type Ga1-vAQVAS cladding layer 6 is made thicker than the film thickness of the n-type Ga1-uAQVAS second cladding layer 4, the asymmetry of the light intensity distribution There is no gender.
さらに、実施例４と同様に、ｎ型Ｇａ１−ｘＡ Ｑ Ｘ
Ａ８第１クラッド層２及び、ｐ型Ｇ ａ ｘ−ｔＡ Ａ
ｔＡ ｓ埋込みクラッド層９の屈折率をｎ型Ｇ ａｌ
−ｕ Ａ Ｑ ｕ Ａ Ｓ第２クラッド層４及びｐ型Ｇ
ａ １−Ｖ Ａ Ｑ ｖ Ａ ｓクラッド層６の屈折
率より小さくしであるため、活性層への光の導波が効率
よく行なわれる。Furthermore, as in Example 4, n-type Ga1-xA Q
A8 first cladding layer 2 and p-type Gax-tA
tA sThe refractive index of the buried cladding layer 9 is set to n-type Gal
-u A Q u A S second cladding layer 4 and p-type G
Since the refractive index of a 1-V A Q v As is smaller than that of the cladding layer 6, light can be efficiently guided to the active layer.
試作した素子は、発振波長８３０ｎｍにおいて。The prototype device has an oscillation wavelength of 830 nm.
しきい電流３０〜３５ｍＡで室温連続発振し、発振スペ
クトルは、安定な縦単一モードであった。Continuous oscillation was performed at room temperature with a threshold current of 30 to 35 mA, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における電流の立上り電圧は１．３Ｖ 、素子抵抗１．
５Ω といった良好な電気特性も得られた。さらに７０
℃において、光出力４０ｍＷ定光出力動作時の寿命も、
２０００時間経過後も顕著な劣化は見られず、信頼性も
高いことが判明した。Also, there was no astigmatism at all. In addition, the current rise voltage in the current-voltage characteristics is 1.3V, and the element resistance is 1.3V.
Good electrical properties of 5Ω were also obtained. Another 70
The lifespan when operating at a constant light output of 40 mW at ℃ is also
No significant deterioration was observed even after 2000 hours, and the reliability was found to be high.
実施例６
本発明の第６の実施例を、第７図を用いて、詳細に説明
する。Example 6 A sixth example of the present invention will be described in detail with reference to FIG.
ｎ型Ｇ ａ Ａ ｓ基板１上に、ｎ型Ｇａｚ−ｘＡ １
１ ｘＡｓ第１クラッド層２ （ｘ＝０．４５ ）、ｎ
型Ｇ ａ ｘ−ｚＡ Ｑ ｚＡ ｓ光強度分布補正層３
（ｚ＝０．２） 。n-type Gaz-xA 1 on n-type GaAs substrate 1
1 x As first cladding layer 2 (x=0.45), n
Type G ax-zA QzA s light intensity distribution correction layer 3
(z=0.2).
ｎ型Ｑ ａ １−ｕ Ａ Ｑ ｕ Ａ ｓ第２クラッド
層４（ｕ＝０．３７ ）、Ｇａｚ−ｙＡＱｙＡｓ活性層
５（ｙ＝０．０６ ）、ｐ型Ｇ ａ ｘ−ｗ Ａ ｎ
ｗ Ａ ｓ界面改良層７（ｗ ＝ ０ 、２ ） 、
ｎ ３Ｍ Ｇ ａ Ａ ｓ電流狭窄層８をＭＯＣＶＤ法
により順次形成するにの時、ｐ型Ｇａｔ−ｗＡＱｗＡｓ
界面改良層７の膜厚を、ｎ型Ｇ ａ ｔ−ｚＡ Ｑ ｚ
Ａ ｓ光強度分布補正層３の膜厚よりも厚くなるように
する。その後、ホトエツチング工程により、ｎ型Ｇ ａ
Ａ ｓ ＠流狭窄層８を完全に除去しＰ型Ｇ ａ １
−ｗ Ａ Ｑ ｗ Ａ ｓ界面改良層７の表面を露出す
る幅１〜１５μｍの溝ストライプを形成する。次にＭＯ
ＣＶＤ法により、ｐ型
ＧａニーｔＡＱｔＡｓ埋込みクラッド層９ （ｔ ＝０
．４５）、ｐ型ＧａＡｓキャップ層１０を形成する。こ
の後、ｐ ａｌｌ電極１１．ｎ側電極１２を形成した後
、へき開法により、共振器長約３００μｍのレーザ素子
を得た。なお、本実施例においては、実施例２と同様に
、ｐ型Ｇ ａ ｔ−ｗＡ Ｑ ｗＡ ｓ界面改良層７の
膜厚をｎ型Ｇａ１−ｚＡＱｚＡｓ光強度分布補正層３の
膜厚より厚くしているため、実施例１及び実施例４より
歩留りが良い。また、ｎ型Ｇａ１−ｖＡ 、Ｑ ｖＡｓ
クラッド層６の屈折率を、ｎ型Ｇａｔ−ｕＡＱｕＡｓ第
２クラッド層４の屈折率よりも小さくしているため、第
７図（ｂ）に示すように、光強度分布は活性層に対して
、対称な形をしている。N-type Q a 1-u A Q u As second cladding layer 4 (u=0.37), Gaz-yAQyAs active layer 5 (y=0.06), p-type G a x-w An
w As interface improvement layer 7 (w = 0, 2),
When forming the n3M GaAs current confinement layer 8 sequentially by MOCVD method, the p-type Gat-wAQwAs
The thickness of the interface improvement layer 7 is
The thickness of the As light intensity distribution correction layer 3 should be greater than that of the light intensity distribution correction layer 3. After that, through a photoetching process, n-type Ga
A s @flow constriction layer 8 is completely removed and P type Ga 1
-w A Q w As Groove stripes with a width of 1 to 15 μm exposing the surface of the interface improvement layer 7 are formed. Next, M.O.
A p-type Ga knee tAQtAs buried cladding layer 9 (t = 0
．． 45) Form a p-type GaAs cap layer 10. After this, pall electrode 11. After forming the n-side electrode 12, a laser element with a cavity length of about 300 μm was obtained by a cleavage method. In this example, as in Example 2, the thickness of the p-type Ga t-wA Q wAs interface improvement layer 7 is made thicker than the thickness of the n-type Ga1-zAQzAs light intensity distribution correction layer 3. Therefore, the yield is better than in Examples 1 and 4. Also, n-type Ga1-vA, Q vAs
Since the refractive index of the cladding layer 6 is made smaller than the refractive index of the n-type Gat-uAQuAs second cladding layer 4, the light intensity distribution with respect to the active layer is as shown in FIG. 7(b). It has a symmetrical shape.
試作した素子は、発振波長８３０ｎｍにおいて、しきい
電流３０〜３５ ｍ Ａで室温連続発振し、発振スペク
トルは、安定な縦単一モードであった。The prototype device oscillated continuously at room temperature at an oscillation wavelength of 830 nm and a threshold current of 30 to 35 mA, and the oscillation spectrum was a stable longitudinal single mode.
また、非点収差は全くなかった。また、電流−電圧特性
における電流の立上り電圧は１．３Ｖ 、素子抵抗１．
５Ω といった良好な電気特性も得られた。さらに、７
０℃において、光出力４０ｍＷ定光出力動作時の寿命も
、２０００時間経過後も顕著な劣化は見られず、信頼性
も高いことが判明した。Also, there was no astigmatism at all. In addition, the current rise voltage in the current-voltage characteristics is 1.3V, and the element resistance is 1.3V.
Good electrical properties of 5Ω were also obtained. Furthermore, 7
At 0° C., no significant deterioration was observed even after 2000 hours of operation at a constant light output of 40 mW, and the reliability was found to be high.
なお、本発明は、実施例に示した波長８３０ｎｍ前後に
限らず、波長６８０〜８９０ｎｍのＧａＡ Ｑ Ａｓ系
半導体レーザ装置で、室温連続発振できる全範囲にわた
り同様な結果が得られた。本実施例では活性層として単
一のＧａＡ Ｑ Ａｓ層を用いたが、 Ｇ ａ １−Ｐ
Ａ ｎ ｐＡ Ｓと、Ｇａｔ−ｑＡＱｑＡｓ （ｐ≠
ｑ）の超格子で活性層を形成したＭ Ｑ Ｗ （Ｍｕｌ
ｔｉ−Ｑｕａｎｔｕｍｎ Ｗｅｌｌ ）構造の場合も同
様な結果が得られた。また、レーザの構造としては前記
実施例で示した３層導波路を基本とするものに限らず、
活性層の両側にそれぞれ隣接して光ガイド層を設けるＧ
ＲＩ Ｎ −Ｓ ＣＨ（Ｇｒａｄｅｄ−Ｉｕｄｓｘ
−３ｅｐａｒｒａｔｅ−Ｃｏｎｆｉｎｅｍｅｎｔ−Ｈｅ
ｔｓｖｏｓｔｖｕｃｔｕｖｅ ）構造にも本発明を適用
することができた。Note that the present invention is not limited to the wavelength of around 830 nm as shown in the example, but similar results were obtained over the entire range in which continuous oscillation at room temperature is possible with a GaA Q As semiconductor laser device having a wavelength of 680 to 890 nm. In this example, a single GaAQAs layer was used as the active layer, but Ga1-P
A n pA S and Gat-qAQqAs (p≠
M Q W (Mul
Similar results were obtained in the case of the ti-Quantum Well) structure. Furthermore, the structure of the laser is not limited to the one based on the three-layer waveguide shown in the above embodiment.
A light guide layer is provided adjacently on both sides of the active layer.G
RI N-S CH (Graded-Iudsx
-3eparrate-Confinement-He
The present invention could also be applied to the tsvostvuctuve) structure.
また、前記実施例において導電性を全て反対にした構造
（ｐをｎに、ｎをｐに置換えた構造）においても同様な
結果が得られた。Furthermore, similar results were obtained in a structure in which the conductivities were all reversed in the above examples (structure in which p was replaced with n and n was replaced with p).
また、本実施例では、ＧａＡ Ｑ Ａｓ系の材料を用い
ているが、Ａ （ｌ ＧａＰＡｓ、 Ａ Ｑ ＩｎＰＡ
ｓ、 Ａ Ｑ ＧａＩｎＰ。In addition, in this example, GaA Q As-based materials are used, but A (l GaPAs, A Q InPA
s, A Q GaInP.
Ａ １１ ＧａＩｎＡｓなど、ＡＱを含む材料系全てに
適用できることは言うまでもない。Needless to say, this method can be applied to all material systems including AQ, such as A 11 GaInAs.
なお、本発明は、当該当基板と前記各半導体領域の間お
よび／もしくは前記各半導体領域間に。Note that the present invention provides a method for forming a connection between the relevant substrate and each of the semiconductor regions and/or between each of the semiconductor regions.
他の介在物が存在しても実施できる。It can be carried out even if other inclusions are present.
また、本実施例においては、ＭＯＣＶＤ法により素子を
作製したが１ＭＢＥ法及びＬＰＥ法によって作製した素
子についても同様の特性が得られた。Further, in this example, the device was fabricated by the MOCVD method, but similar characteristics were obtained with devices fabricated by the 1MBE method and the LPE method.
本発明において、界面改良層を有する自己整合型半導体
レーザ装置に、光強度分布補正量を設けた。それにより
、接合面に垂直な方向の光強度分布は対称形となり、光
が活性層に効率よく導波されるようになった。このため
、低しきい値電流で。In the present invention, a light intensity distribution correction amount is provided in a self-aligned semiconductor laser device having an interface improvement layer. As a result, the light intensity distribution in the direction perpendicular to the bonding surface becomes symmetrical, and light is efficiently guided to the active layer. Because of this, at low threshold currents.
高信頼性の素子が得られた。A highly reliable device was obtained.
第１図は本発明による装置の基本構造及び実施例を示す
図、第２図は従来構造を示す図、第３図〜第７図は本発
明の実施例を示す図である。
１ ・＝ ｎ型Ｇ ａ Ａ ｓ基板、２− ｎ型Ｇａ５
−ｘＡ ｎ ｘＡｓ第１クラッド層、３・・・光強度分
布補正量、４・・・ｎ型Ｇ ａ １−ｕＡ Ｑ ｕＡ
ｓ第２クラッド層、５・・・活性層、６・・・ｐ型Ｇ
ａ １−ｕ Ａ Ｑ ｕ Ａ ｓクラッド層、７・・・
界面改良層、８・・・ｎ型電流狭窄層、９・・・ｐ型Ｇ
ａ ｘ−ｔＡ Ｑ ｔＡ ｓ埋込みクラッド層、１０
・ｐ型Ｇ ａ Ａ ｓキャップ層、１１・・・ｐ側電極
、１２・・・ｎ側電極、１３・・・ｎ型クラッド層。
篤 Ｚ 口
第 ３ 図
’ｆ、Ａ 図
４′−「月゛″７［Ｙが１
５ 、冶Ｍ’？ 埋込Ｊフラ・斥゛鞠す
乙 図
第 ７ 図FIG. 1 is a diagram showing the basic structure and embodiments of an apparatus according to the present invention, FIG. 2 is a diagram showing a conventional structure, and FIGS. 3 to 7 are diagrams showing embodiments of the present invention. 1 ・= n-type GaAs substrate, 2- n-type Ga5
-xA n xAs first cladding layer, 3... Light intensity distribution correction amount, 4... n-type Ga 1-uA Q uA
s second cladding layer, 5... active layer, 6... p-type G
a 1-u A Q u As cladding layer, 7...
Interface improvement layer, 8... n-type current confinement layer, 9... p-type G
a x-tA QtA s buried cladding layer, 10
-p-type GaAs cap layer, 11...p-side electrode, 12...n-side electrode, 13...n-type cladding layer. Atsushi Z Mouth Figure 3 'f, A Figure 4' - "Monday" 7 [Y is 1 5, Ji M'? Embedded J hula/punching
Figure 7
Claims (1)
導電型の第２半導体層、該第２半導体層を形成する半導
体のＡｌモル比よりも小さなＡｌモル比の半導体からな
る第１導電型の第３半導体層、該第３半導体層を形成す
る半導体のＡｌモル比よりも大きいＡｌモル比の半導体
からなる第１導電型の第４半導体層、上記第２及び第４
半導体層よりも屈折率が大きく、且禁制帯幅の小さい第
５半導体層、該第５半導体層よりも屈折率が小さく、且
禁制帯幅の大きい第２導電型の第６半導体層、該第６半
導体層を形成する半導体のＡｌモル比よりも小さなＡｌ
モル比の半導体から第２導電型の第７半導体層、上記第
５、第６及び第７半導体層よりも禁制帯幅の小さい第１
導電型の第８半導体層を順次積層した後、エッチングに
より上記第８半導体層をストライプ状に除去することに
より上記第７半導体層を露出させ、次に上記エッチング
により露出された第７半導体層及び、上記第８半導体層
の表面上に、少なくとも上記第５半導体層よりも屈折率
が小さく、且禁制帯幅の大きい第２導電型の第９半導体
層を設けたことを特徴とする半導体レーザ装置。 ２、上記第３半導体層の膜厚よりも上記第７半導体層の
膜厚の方が厚いことを特徴とする、特許請求の範囲第１
項記載の半導体レーザ装置。 ３、上記第２半導体層の屈折率よりも上記第４半導体層
の屈折率の方が大きいことを特徴とする、特許請求の範
囲第１項記載の半導体レーザ装置。 ４、上記第８半導体層の屈折率よりも上記第６半導体層
の屈折率の方が大きいことを特徴とする、特許請求の範
囲第１項記載の半導体レーザ装置。 ５、上記第６半導体層の膜厚よりも上記第４半導体層の
膜厚の方が小さいことを特徴とする、特許請求の範囲第
１及び第２項のいずれかに記載の半導体レーザ装置。 ６、上記第８半導体層の屈折率よりも上記第２半導体層
の屈折率の方が小さいことを特徴とする、特許請求の範
囲１及び第２項のいずれかに記載の半導体レーザ装置。[Claims] 1. On the first semiconductor region of the first conductivity type, at least the first
a second conductivity type semiconductor layer; a first conductivity type third semiconductor layer made of a semiconductor having an Al molar ratio smaller than that of the semiconductor forming the second semiconductor layer; a semiconductor forming the third semiconductor layer; a fourth semiconductor layer of the first conductivity type made of a semiconductor having an Al molar ratio greater than the Al molar ratio of the second and fourth semiconductor layers;
a fifth semiconductor layer having a refractive index larger than that of the semiconductor layer and a narrow bandgap width; a sixth semiconductor layer of a second conductivity type having a smaller refractive index and a larger bandgap width than the fifth semiconductor layer; 6 Al smaller than the Al molar ratio of the semiconductor forming the semiconductor layer
a seventh semiconductor layer of a second conductivity type from a semiconductor having a molar ratio, a first semiconductor layer having a narrower band gap than the fifth, sixth and seventh semiconductor layers;
After sequentially stacking conductive type eighth semiconductor layers, the seventh semiconductor layer is exposed by removing the eighth semiconductor layer in stripes by etching, and then the seventh semiconductor layer and the seventh semiconductor layer exposed by the etching are removed. , a semiconductor laser device characterized in that a ninth semiconductor layer of a second conductivity type having a refractive index smaller than at least the fifth semiconductor layer and a larger forbidden band width is provided on the surface of the eighth semiconductor layer. . 2. Claim 1, characterized in that the thickness of the seventh semiconductor layer is thicker than the thickness of the third semiconductor layer.
The semiconductor laser device described in . 3. The semiconductor laser device according to claim 1, wherein the refractive index of the fourth semiconductor layer is greater than the refractive index of the second semiconductor layer. 4. The semiconductor laser device according to claim 1, wherein the refractive index of the sixth semiconductor layer is greater than the refractive index of the eighth semiconductor layer. 5. The semiconductor laser device according to claim 1, wherein the thickness of the fourth semiconductor layer is smaller than the thickness of the sixth semiconductor layer. 6. The semiconductor laser device according to claim 1, wherein the refractive index of the second semiconductor layer is smaller than the refractive index of the eighth semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023187A JPS63208290A (en) | 1987-02-25 | 1987-02-25 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023187A JPS63208290A (en) | 1987-02-25 | 1987-02-25 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63208290A true JPS63208290A (en) | 1988-08-29 |
Family
ID=12574956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4023187A Pending JPS63208290A (en) | 1987-02-25 | 1987-02-25 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63208290A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234540A (en) * | 2002-02-12 | 2003-08-22 | Mitsubishi Electric Corp | Distributed feedback laser, semiconductor optical device and method for fabricating distributed feedback laser |
| WO2004027950A1 (en) * | 2002-09-20 | 2004-04-01 | Mitsubishi Chemical Corporation | Semiconductor laser |
| US7792170B2 (en) | 2002-09-20 | 2010-09-07 | Mitsubishi Chemical Corporation | Semiconductor laser |
| US9018641B2 (en) | 2007-11-30 | 2015-04-28 | CSRAM Opto Semiconductors GmbH | Method for producing a radiation-emitting component and radiation-emitting component |
-
1987
- 1987-02-25 JP JP4023187A patent/JPS63208290A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234540A (en) * | 2002-02-12 | 2003-08-22 | Mitsubishi Electric Corp | Distributed feedback laser, semiconductor optical device and method for fabricating distributed feedback laser |
| WO2004027950A1 (en) * | 2002-09-20 | 2004-04-01 | Mitsubishi Chemical Corporation | Semiconductor laser |
| CN100359772C (en) * | 2002-09-20 | 2008-01-02 | 三菱化学株式会社 | Semiconductor laser |
| US7792170B2 (en) | 2002-09-20 | 2010-09-07 | Mitsubishi Chemical Corporation | Semiconductor laser |
| US9018641B2 (en) | 2007-11-30 | 2015-04-28 | CSRAM Opto Semiconductors GmbH | Method for producing a radiation-emitting component and radiation-emitting component |
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