JPS63207816A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPS63207816A JPS63207816A JP3980287A JP3980287A JPS63207816A JP S63207816 A JPS63207816 A JP S63207816A JP 3980287 A JP3980287 A JP 3980287A JP 3980287 A JP3980287 A JP 3980287A JP S63207816 A JPS63207816 A JP S63207816A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- curing agent
- resins
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 80
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 80
- 239000000203 mixture Substances 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000007789 sealing Methods 0.000 title description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- 229920001577 copolymer Polymers 0.000 claims abstract description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 10
- 239000011256 inorganic filler Substances 0.000 claims abstract description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims description 11
- 229920005989 resin Polymers 0.000 abstract description 28
- 239000011347 resin Substances 0.000 abstract description 28
- 229920003986 novolac Polymers 0.000 abstract description 24
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 230000009477 glass transition Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000005350 fused silica glass Substances 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 229910002026 crystalline silica Inorganic materials 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000004593 Epoxy Substances 0.000 description 9
- 238000004898 kneading Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- -1 glycidyl ester Chemical class 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000001993 wax Substances 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 2
- QEZIKGQWAWNWIR-UHFFFAOYSA-N antimony(3+) antimony(5+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Sb+3].[Sb+5] QEZIKGQWAWNWIR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N 1,3-Dimethylbenzene Natural products CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- WETINTNJFLGREW-UHFFFAOYSA-N calcium;iron;tetrahydrate Chemical compound O.O.O.O.[Ca].[Fe].[Fe] WETINTNJFLGREW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000011134 resol-type phenolic resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 125000005480 straight-chain fatty acid group Chemical class 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Sealing Material Composition (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、硬化後の樹脂中にゴム状粒子が均一に分散し
ており、低弾性率で、熱応力が小さく、ガラス転移温度
の低下の慣れがな（、また高絶縁抵抗である等の優れた
電気特性を有し、さらに耐湿性も優れており、半導体装
置やその他の電子回路部品の封止用樹脂として好適に使
用される、半導体封止用エポキシ樹脂組成物に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention has rubber-like particles uniformly dispersed in the resin after curing, which has a low elastic modulus, small thermal stress, and a low glass transition temperature. It also has excellent electrical properties such as high insulation resistance, and has excellent moisture resistance, making it suitable for use as a sealing resin for semiconductor devices and other electronic circuit components. The present invention relates to an epoxy resin composition for semiconductor encapsulation.
一般に、電子部品のパフケージング方法は、大別して、
気密封止（ハーメチックシール）と樹脂封止（レジンシ
ール・プラスチックパッケージング）に分けられる。気
密封止は、主としてセラミック封止が使用され信鯨性の
面では優れているが、製造コストが高くつくので、民生
用あるいは低パワーのデバイスには、生産性、経済性の
面で優れている樹脂封止が用いられている。In general, puff caging methods for electronic components can be broadly divided into:
It can be divided into hermetic sealing and resin sealing (resin seal/plastic packaging). Hermetic sealing mainly uses ceramic sealing, which is excellent in terms of reliability, but it is expensive to manufacture, so it is not suitable for consumer use or low-power devices in terms of productivity and economy. Resin sealing is used.
従来、樹脂封止には、主としてエポキシ樹脂やシリコン
樹脂が用いられてきたが、エポキシ樹脂の方が安価なた
め、封止用樹脂として多く用いられている０例えば、ト
ランスファー成形用の封止用樹脂としては、オルソクレ
ゾールノボラック型エポキシ権脂とノボラック型フェノ
ール樹脂との硬化物が主流となってきている。Conventionally, epoxy resins and silicone resins have been mainly used for resin sealing, but epoxy resins are cheaper, so they are often used as sealing resins.For example, epoxy resins are often used as sealing resins for transfer molding. As resins, cured products of orthocresol novolac type epoxy resin and novolac type phenol resin have become mainstream.
電子部品の封止用樹脂としては、ＩＣ，ＬＳＩの採用に
よって、これらの機器の小型化、高性能化を図るために
、成形性、耐熱性、機械的強度、電気絶縁性、誘電特性
、耐湿性等に優れているものが求められている。特に、
樹脂封止の場合、半導体チップ、コネクタ線及びリード
部と封止用樹脂とが直接接触する界面に、樹脂と金属の
接着界面が形成され、直接的な相互作用をすることにな
る。そのため、封止用樹脂は、半導体封止部品の動作特
性や信鯨性に直接影響を与える。Encapsulating resins for electronic components are required to have good moldability, heat resistance, mechanical strength, electrical insulation, dielectric properties, and moisture resistance, in order to make these devices smaller and higher in performance due to the adoption of ICs and LSIs. There is a demand for products with excellent characteristics. especially,
In the case of resin sealing, an adhesive interface between the resin and the metal is formed at the interface where the semiconductor chip, connector wire, and lead portion are in direct contact with the sealing resin, resulting in direct interaction. Therefore, the encapsulating resin directly affects the operating characteristics and reliability of the semiconductor encapsulated component.
例えば、封止用樹脂と金属との熱膨張係数の違いによっ
てデバイスにストレスがかかり、故障の原因となったり
、封止用樹脂とリード線との接着不足や封止用樹脂の透
湿性のため、配線間の電流のリークや金属材料の腐食の
原因となっている。For example, the difference in thermal expansion coefficient between the encapsulating resin and the metal may put stress on the device and cause it to malfunction, or insufficient adhesion between the encapsulating resin and lead wires, or the moisture permeability of the encapsulating resin. , causing current leakage between wiring and corrosion of metal materials.
更に、最近の半導体素子は益々高集積化が進行しており
、これに応じて封止用樹脂には、樹脂封止されたデバイ
スの特性低下を防止するために、低弾性率である、熱膨
張係数が小さい、熱衝撃によってクランクを発生しない
、リード線との接着が良好である、水蒸気透過性が小さ
い、耐熱性が良好である、及び不純物を含まない等の特
性が必要となってきている。Furthermore, recent semiconductor devices are becoming more and more highly integrated, and in response to this trend, encapsulating resins are made with low elastic modulus and thermal Properties such as a low coefficient of expansion, no cranking due to thermal shock, good adhesion to lead wires, low water vapor permeability, good heat resistance, and no impurities have become necessary. There is.
従って、本発明の目的は、低弾性率で、熱応力が小さく
、ガラス転移温度の低下の慣れがなく、また高絶縁抵抗
である等の優れた電気特性を有し、さらに耐湿性も優れ
ており、半導体装置やその他の電子回路部品の封止用樹
脂として好適に使用される、半導体対土用エポキシ樹脂
組成物を提供することにある。Therefore, the object of the present invention is to provide a material with a low elastic modulus, low thermal stress, no tendency to lower the glass transition temperature, excellent electrical properties such as high insulation resistance, and excellent moisture resistance. Another object of the present invention is to provide an epoxy resin composition for use with semiconductors, which is suitably used as a sealing resin for semiconductor devices and other electronic circuit components.
（問題点を解決するための手一段〕
本発明者らは、鋭意検討した結果、両末端にカルボキシ
ル基を有する、ブタジェンとスチレンの共重合体（ＣＴ
ＢＳ）を添加剤として加えた半導体封止用エポキシ樹脂
が、前記目的を達成し得るものであることを知見した。(Means for Solving the Problems) As a result of intensive studies, the present inventors discovered a copolymer of butadiene and styrene (CT
It has been found that an epoxy resin for semiconductor encapsulation to which BS) is added as an additive can achieve the above object.
本発明は、上記知見に基づきなされたもので、エポキシ
樹脂、エポキシ樹脂の硬化剤、両末端にカルボキシル基
を有する液状であるブタジエン−スチレン共重合体、及
び無機質充填剤からなる半導体封止用エポキシ樹脂組成
物を提供するものである。The present invention was made based on the above findings, and consists of an epoxy resin, a curing agent for the epoxy resin, a liquid butadiene-styrene copolymer having carboxyl groups at both ends, and an inorganic filler. A resin composition is provided.
本発明の半導体封止用エポキシ樹脂組成物において、上
記ブタジエン−スチレン共重合体（ＣＴＢＳ）の作用は
、明確には解明されていないが、次の様に考えることが
できる。本発明の半導体封止用エポキシ樹脂組成物では
、エポキシ樹脂マトリックス中にゴム弾性を有するＣＴ
ＢＳが０．１〜１０μｍの粒径で分散し、且つ粒子界面
でＣＴＢＳとエポキシ樹脂が強固に結合する。この結果
、マトリックスのエポキシ樹脂のガラス転移温度Ｔｇを
低下させることなく弾性率が低下し、内部応力の緩和に
効果が出るものと考えられる。また、本発明の半導体封
止用エポキシ樹脂組成物が優れた耐湿性及び高い絶縁性
を有するのは、ＣＴＢＳが疏水性のスチレンセグメント
を持っているためと考えられる。In the epoxy resin composition for semiconductor encapsulation of the present invention, the action of the butadiene-styrene copolymer (CTBS) has not been clearly elucidated, but can be considered as follows. The epoxy resin composition for semiconductor encapsulation of the present invention uses CT having rubber elasticity in the epoxy resin matrix.
BS is dispersed with a particle size of 0.1 to 10 μm, and CTBS and epoxy resin are strongly bonded at the particle interface. As a result, the modulus of elasticity is reduced without reducing the glass transition temperature Tg of the epoxy resin of the matrix, and it is thought that this is effective in alleviating internal stress. Furthermore, the reason why the epoxy resin composition for semiconductor encapsulation of the present invention has excellent moisture resistance and high insulation properties is thought to be because CTBS has a hydrophobic styrene segment.
以下、本発明の半導体封止用エポキシ樹脂組成物につい
て詳述する。Hereinafter, the epoxy resin composition for semiconductor encapsulation of the present invention will be explained in detail.
本発明の組成物の構成成分であるエポキシ樹脂としては
、特に限定されず、通常知られている多官能エポキシ化
合物、例えば、ノボラック型エポキシ樹脂、ビスフェノ
ールＡ型エポキシ樹脂、脂ＷＩＲエポキシ樹脂、グリシ
ジルエステル系エポキシ樹脂、線状脂肪族エポキシ樹脂
等があげられる。The epoxy resin that is a constituent component of the composition of the present invention is not particularly limited, and commonly known polyfunctional epoxy compounds such as novolac type epoxy resin, bisphenol A type epoxy resin, fat WIR epoxy resin, glycidyl ester Examples include epoxy resins, linear aliphatic epoxy resins, and the like.
上記エポキシ樹脂は、単独で用いても良く、また２種以
上の混合系にして用いても良い。上記エポキシ樹脂の中
でも電気特性、耐熱性等の面からノボラック型エポキシ
樹脂が好ましい。ノボラック型エポキシ樹脂としては、
タレゾールノボラック型エポキシ樹脂及びフェノールノ
ボラック型エポキシ樹脂をあげることができる。The above epoxy resins may be used alone or in a mixed system of two or more. Among the above epoxy resins, novolac type epoxy resins are preferred from the viewpoint of electrical properties, heat resistance, and the like. As a novolac type epoxy resin,
Examples include Talesol novolac type epoxy resin and phenol novolac type epoxy resin.
上記エポキシ樹脂の好ましいエポキシ当量及び軟化点は
、エポキシ樹脂の種類に応じて適宜選定される。例えば
、ノボラック型エポキシ樹脂としては、通常、エポキシ
当量１６０〜２５０、軟化点５０〜１３０℃のものが用
いられる。さらに、タレゾールノボラック型エポキシ樹
脂では、エポキシ当量１８０〜２１０．軟化点６０〜１
１０℃のものが好ましく、フェノールノボラック型エポ
キシ樹脂では、エポキシ当量１６０〜２５０、？他点６
０〜１１０℃のものが好ましい。The preferred epoxy equivalent and softening point of the epoxy resin are appropriately selected depending on the type of epoxy resin. For example, as a novolac type epoxy resin, one having an epoxy equivalent of 160 to 250 and a softening point of 50 to 130°C is usually used. Furthermore, the Talesol novolac type epoxy resin has an epoxy equivalent of 180 to 210. Softening point 60-1
Preferably, the temperature is 10°C, and for phenol novolac type epoxy resin, the epoxy equivalent is 160 to 250. Other points 6
Preferably, the temperature is 0 to 110°C.
また、本発明の組成物の構成成分であるエポキシ樹脂の
硬化剤としては、例えば、フェノール樹脂や多価フェノ
ール化合物、酸無水物類、アミン類、ポリサルファイド
樹脂等があげられる。具体的には、フェノール樹脂や多
価フェノール化合物の例としては、フェノールノボラッ
ク樹脂、クレゾールノボラック樹脂等のノボラック型樹
脂、またレゾール型フェノール樹脂、ビスフェノールＡ
等があげられる。また、酸無水物類の例としては、無水
フタル酸、無水ピロメリット酸、テトラヒドロ無水フタ
ル酸、ヘキサヒドロ無水フタル酸等があげられる。また
、アミン類の例としては、ジエチルアミノプロピルアミ
ン、Ｎ−アミノエチルピペラジン、ｍ−キシレンジアミ
ン等があげられる。Furthermore, examples of the curing agent for the epoxy resin which is a constituent component of the composition of the present invention include phenol resins, polyhydric phenol compounds, acid anhydrides, amines, polysulfide resins, and the like. Specifically, examples of phenolic resins and polyhydric phenol compounds include novolac type resins such as phenol novolac resins and cresol novolac resins, resol type phenolic resins, and bisphenol A.
etc. can be mentioned. Further, examples of acid anhydrides include phthalic anhydride, pyromellitic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and the like. Furthermore, examples of amines include diethylaminopropylamine, N-aminoethylpiperazine, m-xylene diamine, and the like.
これらの硬化剤は、単独で用いても良く、また２種以上
併用しても良い。上記の硬化剤のうちノボラック型樹脂
が最も好ましい。These curing agents may be used alone or in combination of two or more. Among the above curing agents, novolak type resins are most preferred.
上記硬化剤の量は、前記エポキシ樹脂を硬化させうるに
十分な量であれば良く、硬化剤の種類によっても異なる
が、前記エポキシ樹脂の１エポキシ当量当たり、通常０
．４〜２．０当量、好ましくは０．６〜１．５当量であ
る。具体的には、前記エポキシ樹脂の１エポキシ当量に
対して、ノボラック型樹脂を用いる場合には、通常０．
５〜２．０当量、好ましくは０．８〜１．５当量、酸無
水物類を用いる場合には、通常０．４〜１．２当量、好
ましくは０．６〜１．０当量、アミン類を用いる場合に
は１１通常０．５〜２．０当量、好ましくは０．８〜１
．５当量とされる。The amount of the curing agent is sufficient as long as it is sufficient to cure the epoxy resin, and although it varies depending on the type of curing agent, it is usually 0 per 1 epoxy equivalent of the epoxy resin.
．． 4 to 2.0 equivalents, preferably 0.6 to 1.5 equivalents. Specifically, when using a novolac type resin, the amount is usually 0.
5 to 2.0 equivalents, preferably 0.8 to 1.5 equivalents, when acid anhydrides are used, usually 0.4 to 1.2 equivalents, preferably 0.6 to 1.0 equivalents, amine When using 11, usually 0.5 to 2.0 equivalents, preferably 0.8 to 1
．． It is assumed to be 5 equivalents.
また、本発明の組成物の構成成分であるブタジエン−ス
チレン共重合体は、両末端にカルボキシル基を有する反
応性液状ゴムである。Further, the butadiene-styrene copolymer which is a constituent component of the composition of the present invention is a reactive liquid rubber having carboxyl groups at both ends.
上記ブタジエン−スチレン共重合体（ＣＴＢＳ）は、エ
ポキシ樹脂マトリックス中に粒子として分散したときに
、この粒子がゴム弾性を失わないように、スチレン含量
が３〜３０モル％、特に１０〜２５モル％のものが好ま
しい。The butadiene-styrene copolymer (CTBS) has a styrene content of 3 to 30 mol%, particularly 10 to 25 mol%, so that the particles do not lose their rubber elasticity when dispersed as particles in an epoxy resin matrix. Preferably.
また、上記ＣＴＢＳは、分子量が１．０００〜１０．０
００、特に１，５００〜６，０００のものが好ましい。Moreover, the above CTBS has a molecular weight of 1.000 to 10.0.
00, particularly preferably 1,500 to 6,000.
本発明で用いられる上記ＣＴＢＳは、液状であるため、
エポキシ樹脂マトリックス中に容易に均一に分散できる
。Since the CTBS used in the present invention is liquid,
Can be easily and uniformly dispersed in the epoxy resin matrix.
上記ＣＴＢＳの添加量は、樹脂中の重量比〔ＣＴＢＳ／
（エポキシ引脂＋硬化剤十〇ＴＢＳ）’）で、０．０２
〜０．２０の範囲が好ましい、添加量が上記重量比で０
．０２以下では、半導体に加わる応力を低減できず、０
．２０以上では、成形物の熱膨張係数が大きくなり低応
力化効果が減少する。The amount of CTBS added above is determined by the weight ratio [CTBS/
(epoxy resin + hardening agent 10 TBS)'), 0.02
The range of ~0.20 is preferable, and the amount added is 0 in the above weight ratio.
．． If it is less than 0.02, the stress applied to the semiconductor cannot be reduced;
．． If it is 20 or more, the thermal expansion coefficient of the molded product increases and the stress reduction effect decreases.
また、本発明の組成物の構成成分である無機質充填剤と
しては、例えば、ジルコニア、タルク、アルミナ、クレ
ー、マグネシア、溶融シリカ、結晶シリカ、マイカ、ケ
イ酸カルシウム、炭酸カルシウム、フェライト、ガラス
等があげられ、これらを単独で用いても良く、また２種
以上併用しても良い。これらの中で、溶融シリカ、結晶
シリカが最も好ましい。Examples of inorganic fillers that are constituents of the composition of the present invention include zirconia, talc, alumina, clay, magnesia, fused silica, crystalline silica, mica, calcium silicate, calcium carbonate, ferrite, and glass. These may be used alone or in combination of two or more. Among these, fused silica and crystalline silica are most preferred.
上記無機質充填剤の含有量は、通常、エポキシ樹脂、硬
化剤、ＣＴＢＳ及び無機質充填剤を含む全エポキシ樹脂
組成物中の４０〜８０重量％である。The content of the inorganic filler is usually 40 to 80% by weight of the total epoxy resin composition containing the epoxy resin, curing agent, CTBS, and inorganic filler.
また、本発明の組成物には、硬化促進剤を配合すること
ができる。上記硬化促進剤としては、特に制限されるも
のではなく、例えば、イミダゾール、２−メチルイミダ
ゾール、２−エチルイミダゾール、１．２−メチルイミ
ダゾール、２−エチル−４−メチルイミダゾール等のイ
ミダゾール類、トリエチルアミン、ジエチレントリアミ
ン、トリエチレンテトラミン、Ｎ−アミノエチルピペラ
ジン、メタキシレンジアミン等のアミン化合物、トリフ
ェニルホスフィン、トリブチルホスフィン、メチルジフ
ェニルホスフィン、ジメチルホスフィン、フェニルホス
フィン等の有機ホスフィン化合物、さらにはチアゾアー
ル類があげられる。上記硬化促進剤は、単独で用いても
良く、また２種以上併用しても良い。上記硬化促進剤の
配合量は、通常、前記エポキシ樹脂１００重量部に対し
て０゜０５〜５．０重量部とすれば良い。Furthermore, a curing accelerator can be added to the composition of the present invention. The curing accelerator is not particularly limited, and examples thereof include imidazoles such as imidazole, 2-methylimidazole, 2-ethylimidazole, 1,2-methylimidazole, and 2-ethyl-4-methylimidazole, and triethylamine. , amine compounds such as diethylenetriamine, triethylenetetramine, N-aminoethylpiperazine, metaxylene diamine, organic phosphine compounds such as triphenylphosphine, tributylphosphine, methyldiphenylphosphine, dimethylphosphine, phenylphosphine, and thiazoals. . The above curing accelerators may be used alone or in combination of two or more. The amount of the curing accelerator to be blended is usually 0.05 to 5.0 parts by weight per 100 parts by weight of the epoxy resin.
さらに本発明の組成物には、その用途に応じて、例えば
、天然ワックス類、合成ワックス類、直鎖脂肪酸の金属
塩、酸アミド類、エステル類もしくはそれらの混合物等
の離型剤、塩素化パラフィン、臭素化ビスフェノールＡ
型エポキシ樹脂、臭素化フェノールノボラック型エポキ
シ樹脂、ブロムトルエン、ヘキサブロムベンゼン、二酸
化アンチモン等の難燃剤、シランカップリング剤、チタ
ンカツブリング剤等の表面処理剤、カーボンブラック等
の着色剤等を適宜添加することができる。Furthermore, depending on the use, the composition of the present invention may include mold release agents such as natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, or mixtures thereof, chlorinated waxes, etc. Paraffin, brominated bisphenol A
type epoxy resin, brominated phenol novolak type epoxy resin, flame retardants such as bromotoluene, hexabromobenzene, and antimony dioxide, surface treatment agents such as silane coupling agents and titanium clumping agents, and colorants such as carbon black as appropriate. Can be added.
本発明の半導体封止用エポキシ樹脂組成物は、前記エポ
キシ樹脂、前記硬化剤、前記ブタジエン−スチレン共重
合体（ＣＴＢＳ）、及び前記無機質充填剤、さらに好ま
しくは前記硬化促進剤を均一に配合混練（通常は熱混練
）することにより得ることができる。The epoxy resin composition for semiconductor encapsulation of the present invention includes the epoxy resin, the curing agent, the butadiene-styrene copolymer (CTBS), the inorganic filler, and more preferably the curing accelerator, which are uniformly mixed and kneaded. (usually by hot kneading).
本発明の組成物の全成分の同時熱混練は、例えば、硬化
剤としてノボラック型樹脂又は酸無水物類を用いる場合
に適用され、通常、８０〜１２０℃で数分間行われる。Simultaneous thermal kneading of all components of the composition of the present invention is applied, for example, when a novolak type resin or acid anhydride is used as a curing agent, and is usually carried out at 80 to 120° C. for several minutes.
上記混練は、加熱ロールによる溶融混練又は押し出し機
による溶融混練等の公知の手段により行うことができる
。The above-mentioned kneading can be performed by known means such as melt-kneading using heated rolls or melt-kneading using an extruder.
硬化剤としてアミン類を用いる場合は、ＣＴＢＳをエポ
キシ樹脂又は該硬化剤と前もって溶融混練して置いてか
ら、全成分をトライブレンドするのが好ましい。When using amines as a curing agent, it is preferable to melt-knead CTBS with the epoxy resin or the curing agent in advance and then triblend all the components.
このようにして得られる本発明の組成物は、未硬化又は
半硬化状態であり、一般的には粉末状又は粉末タブレッ
ト状のものとして提供される。The composition of the present invention thus obtained is in an uncured or semi-cured state, and is generally provided in the form of a powder or a powder tablet.
また、本発明の半導体封止用エポキシ樹脂組成物は、前
記エポキシ樹脂、例えばノボラック型エポキシ樹脂と前
記ブタジエン−スチレン共重合体（ＣＴＢＳ）とを予め
反応させてゴム変性エポキシ樹脂として置き、その後該
ゴム変性エポキシ樹脂と前記硬化剤等の他の残余成分と
を配合混練することにより製造することもでき、半導体
素子寿命の向上や金型汚染の防止等の面から上記のよう
にして製造するのが好ましい。Further, the epoxy resin composition for semiconductor encapsulation of the present invention is prepared by reacting the epoxy resin, for example, the novolac type epoxy resin, and the butadiene-styrene copolymer (CTBS) in advance to form a rubber-modified epoxy resin, and then forming the rubber-modified epoxy resin. It can also be manufactured by mixing and kneading the rubber-modified epoxy resin and other residual components such as the curing agent, and from the viewpoint of improving the life of semiconductor elements and preventing mold contamination, it is preferable to manufacture as described above. is preferred.
前記エポキシ樹脂と前記ＣＴＢＳとの反応は、エポキシ
基とカルボキシル基を反応させてゴム変性エポキシ樹脂
を製造するのが目的であり、通常１００〜２２０℃で３
０分〜１０時間、好ましくは１２０〜１８０℃で５０分
〜５時間程度行う。The purpose of the reaction between the epoxy resin and the CTBS is to react the epoxy group with the carboxyl group to produce a rubber-modified epoxy resin, and the reaction is usually carried out at 100 to 220°C for 3.
It is carried out for 0 minutes to 10 hours, preferably at 120 to 180°C for about 50 minutes to 5 hours.
このようにして得られるゴム変性エポキシ樹脂と他の残
余成分とを配合混練する条件は、前記の全成分の同時熱
混練の場合と同様である。The conditions for blending and kneading the rubber-modified epoxy resin thus obtained and other remaining components are the same as those for the simultaneous heat kneading of all the components described above.
以下、本発明を、実施例、比較例及び試験例をあげてさ
らに詳細に説明する。Hereinafter, the present invention will be explained in more detail by giving Examples, Comparative Examples, and Test Examples.
実施例１
オルソクレゾールノボラック型エポキシ樹脂（エポキシ
当量２００、軟化点７３℃）１００重量部と、両末端に
カルボキシル基を有するブタジエン−スチレン共重合体
（ＣＴＢＳ）（カルボキシル基当量１９３０、スチレン
含量１７モル％）２０重量部をトリフェニルホスフィン
存在下で反応させ、ゴム変性エポキシ樹脂（ａｌを得た
。Example 1 100 parts by weight of an orthocresol novolak epoxy resin (epoxy equivalent: 200, softening point: 73°C) and a butadiene-styrene copolymer (CTBS) having carboxyl groups at both ends (carboxyl equivalent: 1930, styrene content: 17 moles) %) was reacted in the presence of triphenylphosphine to obtain a rubber-modified epoxy resin (al).
次に、上記ゴム変性エポキシ樹脂ｉａ） １２０重量部
、硬化剤としてフェノールノボランク樹脂（水酸基当量
１０８、軟化点９６℃）５０重量部、難燃剤として臭素
化フェノールノボラック型エポキシ樹脂（エポキシ当量
２７５、軟化点８４℃）１８重量部、難燃剤として二酸
化アンチモン６重量部、無機充填剤としてエポキシシラ
ンで表面処理した溶融シリカ５４０重量部、離型剤とし
てカルバナワックス２重量部、及び着色剤としてカーボ
ンブランク２重量部を混合し、１００℃の温度下で、５
分間ロールで溶融混練した後、冷却固化し、粉砕して、
本発明の半導体対土用エポキシ樹脂組成物を得た。Next, 120 parts by weight of the above rubber-modified epoxy resin ia), 50 parts by weight of a phenol novolak resin (hydroxyl equivalent: 108, softening point: 96°C) as a curing agent, and a brominated phenol novolak type epoxy resin (epoxy equivalent: 275, Softening point: 84°C) 18 parts by weight, 6 parts by weight of antimony dioxide as a flame retardant, 540 parts by weight of fused silica surface-treated with epoxy silane as an inorganic filler, 2 parts by weight of carbana wax as a mold release agent, and carbon as a coloring agent. 2 parts by weight of the blank were mixed, and 5 parts by weight were mixed at a temperature of 100°C.
After melting and kneading with a roll for a minute, it is cooled and solidified, crushed,
An epoxy resin composition for use with semiconductors according to the present invention was obtained.
実施例２
実施例１で用いたものと同じオルソクレゾールノボラッ
ク型エポキシ樹脂１００重量部と、ＣＴＢＳ（カルボキ
シル基当量２２９０、スチレン含量１０モル％）２０重
量部をトリフェニルホスフィン存在下で反応させ、ゴム
変性エポキシ樹脂（ｂｌを得た。Example 2 100 parts by weight of the same orthocresol novolak type epoxy resin used in Example 1 and 20 parts by weight of CTBS (carboxyl group equivalent: 2290, styrene content 10 mol%) were reacted in the presence of triphenylphosphine to form a rubber. A modified epoxy resin (bl) was obtained.
次に、実施例１で用いたゴム変性エポキシ樹脂ｔａ）の
代わりに上記ゴム変性エポキシ樹脂（ｂ）を用いた以外
は実施例１と同様にして本発明の半導体封止用エポキシ
樹脂組成物を得た。Next, the epoxy resin composition for semiconductor encapsulation of the present invention was prepared in the same manner as in Example 1 except that the rubber-modified epoxy resin (b) was used instead of the rubber-modified epoxy resin ta) used in Example 1. Obtained.
比較例１
実施例１で用いたゴム変性エポキシ樹脂（ａ）の代わり
にオルソクレゾールノボランク型エポキシ樹脂１００重
量部を用いた（ＣＴＢＳ配合せず）以外は実施例１と同
様にしてエポキシ樹脂組成物を得た。Comparative Example 1 An epoxy resin composition was prepared in the same manner as in Example 1, except that 100 parts by weight of ortho-cresol novolank type epoxy resin was used instead of the rubber-modified epoxy resin (a) used in Example 1 (CTBS was not blended). I got something.
比較例２
実施例１で用いたＣＴＢＳＯ代わりに、両末端にカルボ
キシル基を有するブタジェン−アクリロニトリル共重合
体（ＣＴＢＮ）（カルボキシル基当量１９００、アクリ
ロニトリル含量１７．０％）を用いた以外は実施例１と
同様にしてエポキシ樹 ゛脂組成物を得た。Comparative Example 2 Example 1 except that a butadiene-acrylonitrile copolymer (CTBN) having carboxyl groups at both ends (carboxyl group equivalent: 1900, acrylonitrile content 17.0%) was used instead of CTBSO used in Example 1. An epoxy resin composition was obtained in the same manner as above.
試験例
上記実施例１〜２で得られた本発明の半導体対土用エポ
キシ樹脂組成物（本発明品１．２）及び上記比較例１〜
２で得られたエポキシ樹脂組成物（比較品１．２）それ
ぞれを、１８０℃で２分間トランスファー成形し、さら
に１７５℃で６時間ポストキュアさせて測定試料を作成
した。これらの測定試料それぞれについて、各種の物性
を測定した。測定項目及びそれらの結果を下記表−１に
示した。Test Examples Epoxy resin compositions for semiconductors and soil of the present invention obtained in Examples 1 to 2 above (Invention Product 1.2) and Comparative Examples 1 to 2 above
Each of the epoxy resin compositions obtained in 2 (Comparative product 1.2) was transfer molded at 180°C for 2 minutes, and further post-cured at 175°C for 6 hours to prepare measurement samples. Various physical properties were measured for each of these measurement samples. The measurement items and their results are shown in Table 1 below.
表−１
上記表−１に示す結果から明らかな通り、本発明品１．
２ （ＣＴＢＳ添加系）は、弾性率が、比較品１に比し
て遥かに小さく、また低応力化剤として良好な評価を受
けているＣＴＢＮ添加系の比較品２と同等であり、さら
に体積抵抗率が、比較品２に比して１桁向上し、吸水率
も良好な値を示している。Table-1 As is clear from the results shown in Table-1 above, the present invention product 1.
2 (CTBS-added system) has a much smaller elastic modulus than Comparative Product 1, and is equivalent to CTBN-added Comparative Product 2, which has been well evaluated as a stress-lowering agent. The resistivity was improved by one digit compared to Comparative Product 2, and the water absorption rate also showed good values.
本発明の半導体封止用エポキシ樹脂組成物は、硬化後の
樹脂中にゴム状粒子が均一に分散しており、低弾性率で
、熱応力が小さく、ガラス転移温度の低下の慣れがなく
、また高絶縁抵抗である等の優れた電気特性を有し、さ
らに耐湿性も優れており、半導体装置やその他の電子回
路部品の封止用樹脂として好適に使用される。The epoxy resin composition for semiconductor encapsulation of the present invention has rubber particles uniformly dispersed in the cured resin, has a low elastic modulus, has small thermal stress, and does not have a habit of lowering the glass transition temperature. It also has excellent electrical properties such as high insulation resistance and moisture resistance, and is suitably used as a sealing resin for semiconductor devices and other electronic circuit components.
Claims (1)
キシル基を有する液状であるブタジエン−スチレン共重
合体、及び無機質充填剤からなる半導体封止用エポキシ
樹脂組成物。An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a curing agent for the epoxy resin, a liquid butadiene-styrene copolymer having carboxyl groups at both ends, and an inorganic filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3980287A JPS63207816A (en) | 1987-02-23 | 1987-02-23 | Epoxy resin composition for sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3980287A JPS63207816A (en) | 1987-02-23 | 1987-02-23 | Epoxy resin composition for sealing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63207816A true JPS63207816A (en) | 1988-08-29 |
Family
ID=12563087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3980287A Pending JPS63207816A (en) | 1987-02-23 | 1987-02-23 | Epoxy resin composition for sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63207816A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04335556A (en) * | 1991-05-10 | 1992-11-24 | Murata Mfg Co Ltd | Hybrid integrated circuit |
| JPH0796673B2 (en) * | 1988-06-29 | 1995-10-18 | ダブリユー・アール・グレイス・アンド・カンパニー‐コネチカツト | Composition for container sealing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4869897A (en) * | 1971-12-20 | 1973-09-21 | ||
| JPS56166225A (en) * | 1980-05-27 | 1981-12-21 | Hitachi Ltd | Epoxy resin composition |
| JPS57131223A (en) * | 1981-02-06 | 1982-08-14 | Hitachi Ltd | Resin composition |
| JPS601220A (en) * | 1983-06-17 | 1985-01-07 | Denki Kagaku Kogyo Kk | Epoxy resin composition for semiconductor sealing |
| JPS61233051A (en) * | 1985-04-09 | 1986-10-17 | Matsushita Electric Works Ltd | Epoxy resin molding material for sealing |
| JPS62184006A (en) * | 1986-02-08 | 1987-08-12 | Nippon Soda Co Ltd | Epoxy resin-modified butadiene copolymer, curable resin composition and prepreg |
-
1987
- 1987-02-23 JP JP3980287A patent/JPS63207816A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4869897A (en) * | 1971-12-20 | 1973-09-21 | ||
| JPS56166225A (en) * | 1980-05-27 | 1981-12-21 | Hitachi Ltd | Epoxy resin composition |
| JPS57131223A (en) * | 1981-02-06 | 1982-08-14 | Hitachi Ltd | Resin composition |
| JPS601220A (en) * | 1983-06-17 | 1985-01-07 | Denki Kagaku Kogyo Kk | Epoxy resin composition for semiconductor sealing |
| JPS61233051A (en) * | 1985-04-09 | 1986-10-17 | Matsushita Electric Works Ltd | Epoxy resin molding material for sealing |
| JPS62184006A (en) * | 1986-02-08 | 1987-08-12 | Nippon Soda Co Ltd | Epoxy resin-modified butadiene copolymer, curable resin composition and prepreg |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0796673B2 (en) * | 1988-06-29 | 1995-10-18 | ダブリユー・アール・グレイス・アンド・カンパニー‐コネチカツト | Composition for container sealing |
| JPH04335556A (en) * | 1991-05-10 | 1992-11-24 | Murata Mfg Co Ltd | Hybrid integrated circuit |
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