JPS63207131A - Plasma processor - Google Patents
Plasma processorInfo
- Publication number
- JPS63207131A JPS63207131A JP3908187A JP3908187A JPS63207131A JP S63207131 A JPS63207131 A JP S63207131A JP 3908187 A JP3908187 A JP 3908187A JP 3908187 A JP3908187 A JP 3908187A JP S63207131 A JPS63207131 A JP S63207131A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- plasma
- substrate
- generated
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000009434 installation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 27
- 238000005299 abrasion Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、プラズマ処理装置に関するものである。[Detailed description of the invention] (b) Industrial application field The present invention relates to a plasma processing apparatus.
（ロ）従来の技術
従来のプラズマ処理装置としては、例えば特開昭６０−
１０９２３１号公報に示されるものがある。このプラズ
マ処理装置は、真空室内でプラズマ流を基板上に照射し
て、基板を処理するためのものである。プラズマ流を基
板上に均一に照射するだめに、基板の中心をプラズマ密
度分布の中心から偏心させると共に基板を回転させるよ
うにしである。これにより基板の被処理面のプラズマ密
度を平均化することができ、基板の各位置における処理
速度を均一化することができる。また、特ｍ昭６０−１
０９２３２号公報にはプラズマ流の通過方向に基板の処
理面を往復動させるようにしたものが示されている。こ
れも基板にプラズマを均一に照射するためである。(B) Conventional technology As a conventional plasma processing apparatus, for example,
There is one shown in Japanese Patent No. 109231. This plasma processing apparatus is used to process a substrate by irradiating the substrate with a plasma stream in a vacuum chamber. In order to uniformly irradiate the plasma stream onto the substrate, the center of the substrate is offset from the center of the plasma density distribution and the substrate is rotated. This allows the plasma density on the surface of the substrate to be processed to be averaged, and the processing speed at each position on the substrate to be made uniform. Also, special M 1986-1
Japanese Patent No. 09232 discloses a device in which the processing surface of a substrate is moved back and forth in the direction in which the plasma flow passes. This is also to uniformly irradiate the substrate with plasma.
（ハ）発明が解決しようとする問題点
しかしながら、上記のような従来のプラズマ処理装置の
場合、真空室中で基板を回転運動又は上下運動させる必
要があるため、電動機や油圧シリンダによって作動する
部材を真空室中に導入する必要がある。このため、しゆ
う動部分から発生する摩耗粉によるノリ染、シール部か
らの漏れによる真空度の低下などの問題が発生する。ま
た、基板を設置用台に固定して動かないようにする必要
がある。本発明は、上記のような問題点を解決すること
を目的としている。(c) Problems to be solved by the invention However, in the case of the conventional plasma processing apparatus as described above, since it is necessary to rotate or move the substrate up and down in a vacuum chamber, members operated by electric motors or hydraulic cylinders are required. must be introduced into the vacuum chamber. For this reason, problems such as glue staining due to abrasion powder generated from the sliding parts and a decrease in the degree of vacuum due to leakage from the sealing parts occur. In addition, it is necessary to fix the board to the installation stand so that it does not move. The present invention aims to solve the above problems.
（ニ）問題点を解決するための手段
本発明は、コイルによって基板などの被処理材に変動す
る磁場を発生させることにより上記問題点を解決する。(d) Means for Solving the Problems The present invention solves the above problems by generating a fluctuating magnetic field in a processed material such as a substrate using a coil.
すなわち、本発明によるプラズマ処理装置は、設置用台
上に置かれた被処理材の被処理面に変動する磁場を発生
させる１又は複数のコイルが設置用台の周辺に設けられ
ている。That is, in the plasma processing apparatus according to the present invention, one or more coils are provided around the installation table to generate a fluctuating magnetic field on the processing surface of the workpiece placed on the installation table.
（ホ）作用
コイルによって被処理面に変動する磁場が発生する。プ
ラズマ流は、磁場によって影響されるので、磁場に応じ
て変動し、被処理面に照射されるプラズマ量は平均化さ
れ均一となる。これにより被処理面の処理精度を均一化
することができる。(e) A varying magnetic field is generated on the surface to be treated by the working coil. Since the plasma flow is influenced by the magnetic field, it varies depending on the magnetic field, and the amount of plasma irradiated onto the surface to be processed is averaged and made uniform. This makes it possible to equalize the processing accuracy of the surface to be processed.
プラズマ照射中波処理材を運動させる必要かないので、
摩耗粉による汚染、シール部からの漏れなどを防止する
ことができ、また被処理材を設置用台へ固定する必要が
なくなる。Since there is no need to move the wave treatment material during plasma irradiation,
It is possible to prevent contamination due to abrasion powder, leakage from the sealing part, etc., and there is no need to fix the material to be treated on the installation stand.
（へ）実施例
第１図に本発明の実施例を示す。真空室１０の内部は排
気装置δ１２によって真空状態とすることが可能としで
ある。真空室１０の上部にはこれと連通ずるプラズマ発
生室１４が設けられている。(F) Embodiment FIG. 1 shows an embodiment of the present invention. The inside of the vacuum chamber 10 can be brought into a vacuum state by an exhaust device δ12. A plasma generation chamber 14 is provided in the upper part of the vacuum chamber 10 and communicates therewith.
真空室１０及びプラズマ発生室１４にはそれぞれガス導
入管１１及び１５が設けられている。プラズマ発生室１
４の周囲には２つのプラズマ発生用コイル１６が設けら
れている。プラズマ発生室１４の上部はマイクロ波導入
窓１８を介して導波管２０が連結されており、この導波
管２０はマイクロ波発生装置２２と接続されている。真
空室１０内には設置用台２４が固定されており、これの
上に被処理材である基板２６が設置される。Gas introduction pipes 11 and 15 are provided in the vacuum chamber 10 and the plasma generation chamber 14, respectively. Plasma generation chamber 1
Two plasma generation coils 16 are provided around 4. A waveguide 20 is connected to the upper part of the plasma generation chamber 14 via a microwave introduction window 18, and this waveguide 20 is connected to a microwave generator 22. An installation stand 24 is fixed in the vacuum chamber 10, and a substrate 26, which is a material to be processed, is placed on this stand.
設置用台２４の上方周囲及び下方周囲にそれぞれ変動磁
場発生用コイル２８及び３０が設置されている。Variable magnetic field generating coils 28 and 30 are installed around the upper and lower sides of the installation stand 24, respectively.
次にこの実施例の作用について説明する。被処理面を上
面とした基板２６が設置用台２４上に設置される。次い
で、排気装置１２を作動させ、真空室１０及びプラズマ
発生室１４の内部を所定圧力まで排気し真空状態とする
。次いで、マイクロ波発生装置２２によフてマイクロ波
が発生させられ、このマイクロ波は導波管２０を通って
プラズマ発生室１４内に導入される。プラズマ発生室１
４内にはプラズマ発生用コイル１６によって磁場が発生
している。プラズマ発生室１４に導入されたマイクロ波
は、磁場によって発生した電子のサイクロトロン運動と
共鳴を起こし、プラズマを発生する。発生したプラズマ
はプラズマ発生用コイル１６の発散磁場によりプラズマ
流となって基板２６の方向へ流れる。プラズマ流の密度
は、プラズマ発生用コイル１６による磁場以外の磁場が
作用しなければ、プラズマ発生用コイル１６の軸心に直
交する面内で同心円状に密度が分布することになる。し
かし、変動磁場発生用コイル２８及び３０によって基板
２６の周辺では変動磁場が発生している。すなわち、変
動磁場発生用コイル２８及び３０にはそれぞれ周波数を
互いに相違させた交流電流か供給されている。これによ
り変動磁場発生用コイル２８及び３０によって発生する
磁場は基板２６の周辺で変動する。このため、プラズマ
流は変動磁場の影響を受け、プラズマ密度の分布状態が
変動する。これにより基板２６の被処理面に照射される
プラズマの量は各場所について平均化され、全面に均一
に分布する。従って、基板２６の処理速度が平均化され
、均一な処理精度を得ることができる。なお、マイクロ
波の周波数を２．４５ＧＨ２としたときプラズマ発生用
コイル１６による磁場は８７５ガウスとなり、基板２６
付近では１００〜２００ガウスとなるので、変動磁場発
生用コイル２８及び３０による変動磁場も１００＝２０
０ガウス程度とする。このようにプラズマ発生用コイル
１６の発散磁場の基板２６付近での強さと、変動磁場発
生用コイル２８及び３０による変動磁場の強さとを同程
度とするのは、プラズマ流に対して変動磁場の彫りを効
果的に与えるためである。変動磁場発生用コイル２８及
び３０による変動磁場か弱すぎる場合にはプラズマ流に
与える影響が小さく、プラズマ流が均一にならず、また
逆に変動磁場が強すぎるとＥ’Ｗが大きくなりすぎ、プ
ラズマが不安定となるからである。Next, the operation of this embodiment will be explained. A substrate 26 with the surface to be processed as the upper surface is placed on the installation stand 24. Next, the exhaust device 12 is operated to evacuate the inside of the vacuum chamber 10 and the plasma generation chamber 14 to a predetermined pressure, thereby creating a vacuum state. Next, microwaves are generated by the microwave generator 22, and the microwaves are introduced into the plasma generation chamber 14 through the waveguide 20. Plasma generation chamber 1
A magnetic field is generated within the plasma generator 4 by a plasma generating coil 16. The microwave introduced into the plasma generation chamber 14 resonates with the cyclotron movement of electrons generated by the magnetic field, generating plasma. The generated plasma becomes a plasma flow due to the divergent magnetic field of the plasma generation coil 16 and flows toward the substrate 26 . The density of the plasma flow will be distributed concentrically within a plane orthogonal to the axis of the plasma generation coil 16 unless a magnetic field other than the magnetic field by the plasma generation coil 16 acts. However, a varying magnetic field is generated around the substrate 26 by the varying magnetic field generating coils 28 and 30. That is, alternating currents having different frequencies are supplied to the varying magnetic field generating coils 28 and 30, respectively. As a result, the magnetic field generated by the variable magnetic field generating coils 28 and 30 varies around the substrate 26. Therefore, the plasma flow is affected by the varying magnetic field, and the distribution state of plasma density fluctuates. As a result, the amount of plasma irradiated onto the surface to be processed of the substrate 26 is averaged for each location and uniformly distributed over the entire surface. Therefore, the processing speed of the substrate 26 is averaged, and uniform processing accuracy can be obtained. Note that when the microwave frequency is 2.45GH2, the magnetic field by the plasma generation coil 16 is 875 Gauss, and the substrate 26
Since it is 100 to 200 Gauss in the vicinity, the varying magnetic field generated by the varying magnetic field generating coils 28 and 30 is also 100 = 20
It should be about 0 Gauss. The reason why the strength of the divergent magnetic field of the plasma generation coil 16 near the substrate 26 and the strength of the fluctuating magnetic field generated by the fluctuating magnetic field generating coils 28 and 30 are made to be the same is because the fluctuating magnetic field is This is to give effective engraving. If the varying magnetic field generated by the varying magnetic field generating coils 28 and 30 is too weak, the effect on the plasma flow will be small and the plasma flow will not become uniform, and conversely, if the varying magnetic field is too strong, E'W will become too large. This is because the plasma becomes unstable.
（ト）発明の詳細
な説明してきたように、本発明によると、プラズマ流に
対して変動磁場を与えるようにしたので、プラズマ流を
被処理面上に均一に照射することができる。しかも、こ
のように均一にプラズマ流を照射するために被処理材を
運動させる必要がないため、摩耗粉の発生、真空度の低
下などの問題が発生することが防止され、また被処理材
を設置用台に固定する機構も不要となる。(g) As described above in detail, according to the present invention, since a fluctuating magnetic field is applied to the plasma flow, the plasma flow can be uniformly irradiated onto the surface to be processed. Moreover, since there is no need to move the material to be treated in order to uniformly irradiate the plasma flow in this way, problems such as the generation of abrasion powder and a decrease in the degree of vacuum are prevented, and the material to be treated is There is also no need for a mechanism to fix it to the installation stand.
第１図は本発明の実施例を示す図である。
１０・・・真空室、１２・・・排気装置、１４・・・プ
ラズマ発生室、１６・・・プラズマ発生用コイル、２２
・・・マイクロ波発生装置、２４・・・設置用台、２６
・・・基板（被処理材）、２８・・・変動磁場発生用コ
イル、３０・・・変動磁場発生用コイル。FIG. 1 is a diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 10... Vacuum chamber, 12... Exhaust device, 14... Plasma generation chamber, 16... Coil for plasma generation, 22
... Microwave generator, 24 ... Installation stand, 26
. . . Substrate (material to be treated), 28 . . . Coil for generating variable magnetic field, 30 . . . Coil for generating variable magnetic field.
Claims (1)
のプラズマ処理装置において、 設置用台上に置かれた被処理材の被処理面に変動する磁
場を発生させる１又は複数のコイルが設置用台の周辺に
設けられていることを特徴とするプラズマ処理装置。[Scope of Claims] A plasma processing apparatus for processing a material to be processed using a plasma flow in a vacuum chamber, comprising: (1) generating a fluctuating magnetic field on a processing surface of a material to be processed placed on an installation table; Alternatively, a plasma processing apparatus characterized in that a plurality of coils are provided around an installation stand.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3908187A JPS63207131A (en) | 1987-02-24 | 1987-02-24 | Plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3908187A JPS63207131A (en) | 1987-02-24 | 1987-02-24 | Plasma processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63207131A true JPS63207131A (en) | 1988-08-26 |
Family
ID=12543148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3908187A Pending JPS63207131A (en) | 1987-02-24 | 1987-02-24 | Plasma processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63207131A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02111023A (en) * | 1988-10-20 | 1990-04-24 | Fujitsu Ltd | Formation of film and plasma cvd apparatus |
| US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
| JPH06196447A (en) * | 1993-03-18 | 1994-07-15 | Hitachi Ltd | Plasma treatment device |
| KR20000057263A (en) * | 1997-05-14 | 2000-09-15 | 조셉 제이. 스위니 | Method and apparatus for producing a uniform density plasma above a substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109232A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Method for microwave plasma treatment |
| JPS60154620A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Treatment of microwave plasma |
| JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing device |
-
1987
- 1987-02-24 JP JP3908187A patent/JPS63207131A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109232A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Method for microwave plasma treatment |
| JPS60154620A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Treatment of microwave plasma |
| JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02111023A (en) * | 1988-10-20 | 1990-04-24 | Fujitsu Ltd | Formation of film and plasma cvd apparatus |
| US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
| JPH06196447A (en) * | 1993-03-18 | 1994-07-15 | Hitachi Ltd | Plasma treatment device |
| KR20000057263A (en) * | 1997-05-14 | 2000-09-15 | 조셉 제이. 스위니 | Method and apparatus for producing a uniform density plasma above a substrate |
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