JPS63204753A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63204753A JPS63204753A JP3862587A JP3862587A JPS63204753A JP S63204753 A JPS63204753 A JP S63204753A JP 3862587 A JP3862587 A JP 3862587A JP 3862587 A JP3862587 A JP 3862587A JP S63204753 A JPS63204753 A JP S63204753A
- Authority
- JP
- Japan
- Prior art keywords
- die pad
- resin
- package
- semiconductor element
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 31
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 239000000088 plastic resin Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 20
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 2
- 230000000593 degrading effect Effects 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 19
- 229920000647 polyepoxide Polymers 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 13
- 229920003986 novolac Polymers 0.000 description 11
- -1 silane compound Chemical class 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000005011 phenolic resin Substances 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- MLAZAKLBWAQRPR-UHFFFAOYSA-M (3-benzyl-2-methylpentan-2-yl)-tributylazanium;chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)C(C)(C)C(CC)CC1=CC=CC=C1 MLAZAKLBWAQRPR-UHFFFAOYSA-M 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- WMNWJTDAUWBXFJ-UHFFFAOYSA-N 3,3,4-trimethylheptane-2,2-diamine Chemical compound CCCC(C)C(C)(C)C(C)(N)N WMNWJTDAUWBXFJ-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- RJJBPKBERXBXEI-UHFFFAOYSA-N [B].C(#N)C(C)C=1N=C(NC1)CCCCCCCCCCC Chemical class [B].C(#N)C(C)C=1N=C(NC1)CCCCCCCCCCC RJJBPKBERXBXEI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QEZIKGQWAWNWIR-UHFFFAOYSA-N antimony(3+) antimony(5+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Sb+3].[Sb+5] QEZIKGQWAWNWIR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical class [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、耐半田熱衝撃性に優れた半導体装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having excellent solder thermal shock resistance.
一般に、樹脂封止型の半導体装置は、リードフレームの
ダイパッド上への半導体素子のグイボンド、ワイヤーボ
ンド、樹脂封止、タイバーカット、ピン曲げという一連
の工程を経由して製造される。この種の樹脂封止型半導
体装置の典型例は、ＤＩＰ （デュアルインラインパッ
ケージ）形のものであり、パッケージの両側に配設され
たビンを挿入することにより基板に実装される。しかし
ながら、最近では、実装密度を高くするため、ＤＩＰタ
イプのパッケージではなくフラットパッケージやＰＬＣ
Ｃ（プラスチックリープイツトチップキャリヤ）形のパ
ッケージがなされるようになっている。このようなタイ
プのパッケージは、基板面に対して直接半田接合により
実装されるものであり、その実装に際しては、半田浸漬
やペーパーフェーズソルダリング等が行われ、パッケー
ジ全体が実装時に高温にさらされる。したがって、この
ようなパッケージにおいては、特に耐半田熱衝撃性に優
れていることが要求される。Generally, a resin-sealed semiconductor device is manufactured through a series of steps including bonding a semiconductor element onto a die pad of a lead frame, wire bonding, resin sealing, tie bar cutting, and pin bending. A typical example of this type of resin-sealed semiconductor device is a DIP (dual in-line package) type device, which is mounted on a substrate by inserting vias provided on both sides of the package. However, recently, in order to increase packaging density, flat packages and PLC packages are being used instead of DIP type packages.
A C (plastic leap-fit chip carrier) type package is now available. This type of package is mounted by soldering directly to the board surface, and during mounting, solder dipping or paper phase soldering is performed, and the entire package is exposed to high temperatures during mounting. . Therefore, such a package is particularly required to have excellent solder thermal shock resistance.
最近では、チップの大形化ならびにパッケージの薄形化
が試みられており、なかにはチップサイズが１００ｍｍ
”以上に達するものもある。このような大形のチップを
、先に述べたようなフラットパッケージやＰＬＣＣでパ
ッケージングする場合、パッケージソゲしたのち、通常
の雰囲気下で数時間放置し、ついで、例えば半田浸漬に
よって表面実装を行うと、パッケージクラックが多発し
、実装後の耐湿性が著しく低下するという現象が生じて
いる。Recently, attempts have been made to increase the size of chips and thinner packages, with some chip sizes reaching 100 mm.
When packaging such a large chip with a flat package or PLCC as mentioned above, after the package is soldered, it is left in a normal atmosphere for several hours, and then For example, when surface mounting is performed by solder dipping, package cracks occur frequently and the moisture resistance after mounting is significantly reduced.
このように、フラットタイプやＰＬＣＣ等のタイプのパ
ッケージングを行う場合には、パッケージ自体に耐半田
熱衝撃性を備えていることが要求されているが、チップ
サイズが大形化し、しかもパッケージが薄形化している
現状では、半田浸漬等の表面実装時に、先に述べたよう
なパッケージクラックが多発するというような問題が生
じており、これの早急な解決が望まれている。In this way, when packaging types such as flat type or PLCC, the package itself is required to have solder thermal shock resistance, but as the chip size increases and the package In the current situation where devices are becoming thinner, problems such as the above-mentioned package cracks occur frequently during surface mounting such as solder dipping, and an immediate solution to this problem is desired.
この発明は、このような事情に鑑みなされたもので、耐
半田熱衝撃性に優れた半導体装置の提供をその目的とす
る。The present invention was made in view of the above circumstances, and an object thereof is to provide a semiconductor device having excellent solder thermal shock resistance.
上記の目的を達成するため、この発明の半導体装置は、
リードフレームのグイパッド上に半導体素子が載置され
た状態で熱硬化性樹脂により樹脂封止された半導体装置
において、ダイパッドを半導体素子の底面よりも小形に
形成するという構成をとる。In order to achieve the above object, the semiconductor device of the present invention includes:
In a semiconductor device in which a semiconductor element is placed on a die pad of a lead frame and sealed with a thermosetting resin, the die pad is formed smaller than the bottom surface of the semiconductor element.
すなわち、本発明者らは、上記フラットパッケージ、Ｐ
ＬＣＣ等の表面実装時におけるパッケージクラックの発
生原因について一連の研究を重ねた。その結果、表面実
装時における半田加熱により、封止樹脂とダイパッドと
の界面に、樹脂中の水分の気化蒸気が集中し、ダイパッ
ドから封止樹脂を底面側に押圧して全体が膨らんだよう
な状態になり、それによってパッケージクラックが発生
することを突き止めた。そこで、本発明者らは、このよ
うな現象の発生防止についてさらに研究を重ねた結果、
ダイパッドの表面積をシリコンチップの底面積よりも小
さくすると、上記封止樹脂中の水分の気化蒸気の集中現
象が少なくなり、パッケージクラックの発生が防止され
るようになることを見いだしこの発明に到達した。That is, the present inventors have discovered that the flat package, P
We have conducted a series of studies on the causes of package cracks during surface mounting of LCCs, etc. As a result, due to the solder heating during surface mounting, the vaporized moisture in the resin concentrates at the interface between the sealing resin and the die pad, pushing the sealing resin from the die pad toward the bottom side, causing the entire body to swell. It was discovered that this caused package cracks. Therefore, as a result of further research into preventing such phenomena from occurring, the present inventors found that
This invention was achieved by discovering that if the surface area of the die pad is made smaller than the bottom area of the silicon chip, the concentration of water vapor in the sealing resin will be reduced, and the occurrence of package cracks will be prevented. .
この発明の対象となる半導体装置は、半導体素子自体が
偏平状であって、その底面積が６０重１以上、特に６０
鶴２〜４００１ｍ”であり、その封止パッケージの厚み
が１．５ ｍｍ４． Ｑ ｍｍのようなものについて特
に有効であり、そのような半導体装置におけるダイパッ
ドの半導体素子載置面の寸法を１６鶴２以下、特に４鶴
２〜１６１１に設定すると、先に述べたようなシリコン
チップ底面側の半田加熱時の膨れの発生が防止され、パ
ッケージクラックの発生が回避されるようになる。In the semiconductor device to which the present invention is applied, the semiconductor element itself is flat, and its base area is 60 times or more, particularly 60 times
It is particularly effective for devices with a sealing package thickness of 1.5 mm or 4. Q mm, and the dimensions of the semiconductor element mounting surface of the die pad in such semiconductor devices are When it is set to 2 or less, especially 4 cranes 2 to 1611, the above-mentioned blistering on the bottom side of the silicon chip during solder heating is prevented, and package cracks are avoided.
上記の場合、そのパッケージのタイプは、フラットパッ
ケージ、ＰＬＣＣ等の表面実装形のパッケージが特に効
果的であるが、表面実装形だけに限るものではなくＤＩ
Ｐタイプについても応用可能である。In the above case, the type of package is particularly effective, such as a flat package or a surface mount type package such as PLCC, but it is not limited to the surface mount type.
It is also applicable to P type.
なお、上記パッケージングに用いる封止樹脂としては、
予備反応によりシランカップリング剤等のシラン化合物
が分子構造中に導入されているエポキシ樹脂もしくはフ
ェノール樹脂（エポキシ樹脂硬化剤）と硬化促進剤等と
を用いて得られたエポキシ樹脂組成物を用いることがパ
ッケージクラック等の発生防止の観点から有効である。In addition, the sealing resin used for the above packaging is as follows:
Use an epoxy resin composition obtained by using an epoxy resin or phenol resin (epoxy resin curing agent) and a curing accelerator, etc., into which a silane compound such as a silane coupling agent is introduced into the molecular structure by preliminary reaction. is effective from the viewpoint of preventing the occurrence of package cracks, etc.
このような樹脂を用いると、封止樹脂とチップとの接着
力が０．５ ｋｇ／ｍｍ２以上、封止樹脂とリードフレ
ームとの接着力が０．２ ｋｇ／ｍ＋ｎ”以上のものに
なり、耐半田耐熱性の向上に効果的に寄与するようにな
る。When such a resin is used, the adhesive force between the sealing resin and the chip is 0.5 kg/mm2 or more, and the adhesive force between the sealing resin and the lead frame is 0.2 kg/m+n'' or more, This effectively contributes to improving solder heat resistance.
上記エポキシ樹脂組成物に用いるエポキシ樹脂は、特に
制限するものではなく、タレゾールノボラック型、フェ
ノールノボラック型やビスフェノールＡ型等の従来から
半導体装置の封止樹脂として用いられている各種のエポ
キシ樹脂が用いられる。これらの樹脂のなかでも融点が
室温を超えており、室温下では固形状もしくは高粘度の
溶液状を呈するものを用いることが好結果をもたらす。The epoxy resin used in the above epoxy resin composition is not particularly limited, and various epoxy resins conventionally used as sealing resins for semiconductor devices, such as Talesol novolac type, phenol novolac type, and bisphenol A type, can be used. used. Among these resins, it is preferable to use one having a melting point above room temperature and exhibiting a solid state or a highly viscous solution state at room temperature.
ノボラック型エポキシ樹脂としては、代表的なりレゾー
ルノボラック型エポキシ樹脂のほか、ｔｅｒ ｔ−ブチ
ル基、メチル基等各種のアルキル基をフェノール部に付
加したアルキル化フェノールノボラック型エポキシ樹脂
が一般に用いられる。これらのノボラック型エポキシ樹
脂としては、エポキシ当量が１６０〜３００．軟化点が
５０〜１３０ ’Ｃのものが賞月される。As the novolac type epoxy resin, in addition to the typical resol novolac type epoxy resin, alkylated phenol novolac type epoxy resins in which various alkyl groups such as tert-butyl group and methyl group are added to the phenol moiety are generally used. These novolac type epoxy resins have an epoxy equivalent of 160 to 300. Those with a softening point of 50 to 130'C are prized.
上記エポキシ樹脂とともに用いるフェノール樹脂は、上
記エポキシ樹脂の硬化剤として作用するものであり、フ
ェノールノボラック、タレゾールノボラックやその他タ
ーシャルブチル基等のアルキル基ヲフェノール部に付加
したアルキル化フェノールノボラック樹脂等が好適に用
いられる。これらノボラック樹脂としては軟化点が５０
〜１１０°Ｃ９水酸基当量が７０〜１８０のものを用い
ることが好ましい。The phenol resin used with the above epoxy resin acts as a curing agent for the above epoxy resin, and includes phenol novolac, talesol novolac, and other alkylated phenol novolak resins in which an alkyl group such as a tertiary butyl group is added to the phenol moiety. is preferably used. These novolak resins have a softening point of 50
It is preferable to use one having a hydroxyl group equivalent of 70 to 180 at ~110°C.
硬化促進剤としては、従来から用いられている各種の硬
化促進剤が用いられ、単独でもしくは併せて使用するこ
とができる。この種の硬化促進剤として、下記の三級ア
ミン、四級アンモニウム塩、イミダゾール類およびホウ
素化合物を好適な例としてあげることができる。As the curing accelerator, various conventionally used curing accelerators can be used, and they can be used alone or in combination. Suitable examples of this type of curing accelerator include the following tertiary amines, quaternary ammonium salts, imidazoles, and boron compounds.
三級アミン
トリエタノールアミン、テトラメチルヘキサンジアミン
、トリエチレンジアミン、ジメチルアニリン、ジメチル
アミノエタノール、ジエチルアミノエタノール、２，４
．８−（ジメチルアミノメチル）フェノール、Ｎ、Ｎ’
−ジメチルピペラジン、ピリジン、ピコリン、１．８−
ジアザ−ビシクロ（５，４，Ｏ）ウンデセン−７、ベン
ジルジメチルアミン、２−（ジメチルアミノ）メチルフ
ェノール四級アンモニウム塩
ドデシルトリメチルアンモニウムアイオダイド、セチル
トリメチルアンモニウムクロライド、ベンジルジメチル
テトラブチルアンモニウムクロライド、ステアリルトリ
メチルアンモニウムクロライド。Tertiary amine triethanolamine, tetramethylhexanediamine, triethylenediamine, dimethylaniline, dimethylaminoethanol, diethylaminoethanol, 2,4
．． 8-(dimethylaminomethyl)phenol, N, N'
-dimethylpiperazine, pyridine, picoline, 1.8-
Diaza-bicyclo(5,4,O)undecene-7, benzyldimethylamine, 2-(dimethylamino)methylphenol quaternary ammonium salt dodecyltrimethylammonium iodide, cetyltrimethylammonium chloride, benzyldimethyltetrabutylammonium chloride, stearyltrimethyl ammonium chloride.
イミダゾール類
２−メチルイミダゾール、２−ウンデシルイミダゾール
、２−エチルイミダゾール、１−ベンジル−２−メチル
イミダゾール、１−シアンエチル−２−ウンデシルイミ
ダゾールホウ素化合物
テトラフェニルボロン、テトラフェニルボレート、Ｎ−
メチルモルホリンテトラフェニルボレート
また、必要に応じて上記の原料以外に離型剤。Imidazoles 2-methylimidazole, 2-undecylimidazole, 2-ethylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole boron compounds tetraphenylboron, tetraphenylborate, N-
Methylmorpholine tetraphenylborate and mold release agent in addition to the above raw materials if necessary.
無機質充填剤、二酸化アンチモン、リン系化合物等の難
燃剤やシランカップリング剤のようなシラン化合物およ
び顔料ならびにポリシロキサンを用いることができる。Inorganic fillers, antimony dioxide, flame retardants such as phosphorous compounds, silane compounds such as silane coupling agents, pigments, and polysiloxanes can be used.
この発明で用いる封止樹脂としては、先に述べたように
、シランカップリング剤のようなシラン化合物を予備反
応させてエポキシ樹脂やフェノール樹脂を予め変性し、
これをエポキシ樹脂組成物の主成分として用いるものが
好適であるが、上記のようなシラン変性エポキシ樹脂、
フェノール樹脂とシランカップリング剤等のシラン化合
物を適宜併用することが可能であり、この場合には、上
記併用するシラン化合物は無機質充填剤の処理用として
使用することが行われる。As described above, the sealing resin used in this invention is obtained by pre-reacting a silane compound such as a silane coupling agent to modify the epoxy resin or phenol resin in advance.
It is preferable to use this as the main component of an epoxy resin composition, but silane-modified epoxy resins such as those described above,
It is possible to appropriately use a phenol resin and a silane compound such as a silane coupling agent in combination, and in this case, the silane compound used in combination is used for treating the inorganic filler.
なお、上記離型剤としては、従来公知のステアリン酸、
バルミチン酸等の長鎖カルボン酸、ステアリン酸亜鉛、
ステアリン酸カルシウム等の長鎖カルボン酸の金属塩、
カルナバワックス、モンタンワックス等のワックス類を
用いることができる。In addition, as the above-mentioned mold release agent, conventionally known stearic acid,
Long chain carboxylic acids such as valmitic acid, zinc stearate,
metal salts of long-chain carboxylic acids such as calcium stearate;
Waxes such as carnauba wax and montan wax can be used.
また、上記無機質充填剤としては、特に制限するもので
はなく、−ｍに用いられている石英ガラス粉末、タルク
、シリカ粉末、アルミナ粉末等が適宜に用いられる。The inorganic filler is not particularly limited, and silica glass powder, talc, silica powder, alumina powder, etc. used in -m can be used as appropriate.
上記封止に用いる樹脂は、先に述べたように、封止エポ
キシ樹脂組成物の主成分であるエポキシ樹脂、フェノー
ル樹脂をシランカップリング剤等のシラン化合物と予備
反応させ、変性させるものであって、それによって半導
体チップ中におけるケイ素と封止樹脂中におけるケイ素
とを酸素架橋させ、強靭な接着力を発現させるものであ
る。As mentioned above, the resin used for the sealing is a resin that is modified by pre-reacting the epoxy resin and phenol resin, which are the main components of the sealing epoxy resin composition, with a silane compound such as a silane coupling agent. As a result, the silicon in the semiconductor chip and the silicon in the sealing resin are cross-linked with oxygen, and a strong adhesive force is developed.
上記変性用の化合物としては、アミノ基、メルカプト基
、グリシジル基、水酸基、カルボキシル基等の官能基を
もったシラン化合物があげられる。Examples of the above-mentioned modifying compound include silane compounds having functional groups such as an amino group, a mercapto group, a glycidyl group, a hydroxyl group, and a carboxyl group.
その代表例としては（つぎのようなものがある。Typical examples include the following:
■ Ｎ−（２−アミノエチル）３−アミノプロピルメチ
ルジメトキシシラン
■ Ｎ−（２−アミノエチル）３−アミノプロピルトリ
メトキシシラン
■ ３−アミノプロピルトリメトキシシラン■ ３−ア
ミノプロピルメチルジェトキシシラン
■ ３−グリシドキシプロビルトリメトキシシラン
■ ３−グリシドキシプロビルメチルジメトキシシラン
■ ２−（３，４−エポキシシクロヘキシル）エチルト
リメトキシシラン
■ ３−メルカプトプロピルトリメトキシシラン
上記シラン化合物のうち■、■、■、■、■はエポキシ
樹脂の変性に用いることができ、■、■、■、■、■、
■、■はフェノール樹脂の変性に用いることができる。■ N-(2-aminoethyl)3-aminopropylmethyldimethoxysilane■ N-(2-aminoethyl)3-aminopropyltrimethoxysilane■ 3-aminopropyltrimethoxysilane■ 3-aminopropylmethyljethoxysilane■ 3-glycidoxypropyltrimethoxysilane ■ 3-glycidoxypropylmethyldimethoxysilane ■ 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane ■ 3-Mercaptopropyltrimethoxysilane Among the above silane compounds ■ , ■, ■, ■, ■ can be used to modify epoxy resin, ■, ■, ■, ■, ■,
(1) and (2) can be used to modify phenolic resins.
上記変性の際の予備反応は、エポキシ樹脂もしくはフェ
ノールノボラック系樹脂を軟化点以上、好適には１３０
−１７０’ｃに加熱して行うことが望ましい。このとき
、予備反応に使用するシラン化合物の量は、エポキシ樹
脂組成物中における樹脂成分に対し０．０３〜１５重景
％（以下「％」と略す）内に設定することが望ましい。In the preliminary reaction during the above-mentioned modification, the epoxy resin or phenol novolak resin is heated to a temperature higher than the softening point, preferably at 130°C.
It is preferable to heat to -170'c. At this time, the amount of the silane compound used in the preliminary reaction is desirably set within 0.03 to 15 weight percent (hereinafter abbreviated as "%") based on the resin component in the epoxy resin composition.
すなわち、上記範囲をはずれると良好な効果が得られに
くくなるからである。特に、好適なのは０．１５〜３．
０％の範囲内である。That is, if the content is outside the above range, it becomes difficult to obtain good effects. Particularly suitable is 0.15 to 3.
It is within the range of 0%.
上記のようにすることにより、封止樹脂と半導体チップ
との接着力を著しく高めることができるのであるが、さ
らに、封止樹脂として１７０°Ｃの曲げ弾性率が５０〜
３００ ｋｇ／ｍｍ”であるものを用いると、上記効果
に、さらに封止樹脂の高温時における応力緩和効果が付
加されるようになり、一層耐湿信頼性の向上効果が得ら
れるようになる。By doing the above, it is possible to significantly increase the adhesive strength between the encapsulating resin and the semiconductor chip, and furthermore, the flexural modulus of the encapsulating resin at 170°C is 50 to 50.
300 kg/mm", the effect of stress relaxation at high temperatures of the sealing resin is added to the above effect, and the effect of further improving moisture resistance reliability can be obtained.
この発明の半導体装置は、以上のように、半導体素子を
載置するグイバットを、半導体素子の底面よりも小形に
形成しているため、表面実装時における半田浸漬等の熱
衝撃に対しても強い抵抗力を備えており、表面実装後に
耐湿信鯨性が低下するというようなことがない。すなわ
ち、この発明の半導体装置は、上記のような簡単な構成
により、優れた耐半田熱衝撃性を備えており、極めて実
用的価値が大である。As described above, the semiconductor device of the present invention is resistant to thermal shocks such as solder immersion during surface mounting because the guide plate on which the semiconductor element is placed is formed to be smaller than the bottom surface of the semiconductor element. It has high resistance, and its moisture resistance does not deteriorate after surface mounting. That is, the semiconductor device of the present invention has excellent solder thermal shock resistance due to the simple configuration as described above, and is of great practical value.
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
（実施例１〜７〕
後記の第１表に示すサイズのダイパッドを備えたリード
フレームを準備し、これに同表に示したチップサイズの
半導体素子をｉａ置した。そして、これを同表に示す組
成の封止樹脂を用い、パッケージサイズが同表になるよ
うに樹脂封止した。この樹脂封止はモールドによって行
い、成形条件は１７５°Ｃ（２分）、後硬化は１７５°
Ｃ（５時間）の条件で行った。これを第１図および第２
図に示す。図において、１はパッケージ、２はツリピン
、３はチップ、４はダイパッドである。このようにして
得られた半導体装置に対して、パッケージクラックを測
定した。その結果は同表に示すとおりであり、いずれの
実施例も良好な成績を示している。(Examples 1 to 7) A lead frame equipped with a die pad of the size shown in Table 1 below was prepared, and a semiconductor element of the chip size shown in the table was placed ia on it. Using a sealing resin with the composition shown, resin sealing was performed so that the package size was as shown in the table.This resin sealing was performed by molding, the molding conditions were 175 ° C (2 minutes), and the post-curing was 175 ° C.
The test was carried out under the conditions of C (5 hours). This is shown in Figures 1 and 2.
As shown in the figure. In the figure, 1 is a package, 2 is a trip pin, 3 is a chip, and 4 is a die pad. Package cracks were measured for the semiconductor device thus obtained. The results are shown in the same table, and all examples showed good results.
なお、後記の第１表において、実施例１〜４はフラット
パッケージタイプであり、実施例５〜７はＤＩＰタイプ
である。In Table 1 below, Examples 1 to 4 are flat package types, and Examples 5 to 7 are DIP types.
（以下余白）
なお、第１表において、チップの接着力は、プッシュプ
ルゲージを用い剪断接着力として常温下で求めた。また
、パッケージクラックの評価は、成形物を８５°Ｃ／８
５％ＲＨで４８時間吸湿させ、その後、２１５’Ｃの半
田浴に１０秒間浸漬しパッケージクラックの発生の有無
で判定した（以下の表でも同様である）。(The following is a blank space) In Table 1, the adhesive strength of the chip was determined as shear adhesive strength at room temperature using a push-pull gauge. In addition, evaluation of package cracks was conducted at 85°C/8
It was allowed to absorb moisture at 5% RH for 48 hours, and then immersed in a 215'C solder bath for 10 seconds, and was judged by the presence or absence of package cracks (the same applies to the table below).
〔比較例１〜４〕
リードフレームとしてダイパッドの大きさが、第２表に
示すように、チップより大きい従来のものを用い、上記
対応する実施例１〜４と同じ条件で成形しサンプルを作
製した。これを第３図および第４図に示す。図において
、ｌはパッケージ、２はツリピン、３はチップ、４はダ
イパッドである。そして、このサンプルについて実施例
と同様にして性能試験を行った結果を後記の第２表に示
す。[Comparative Examples 1 to 4] A conventional lead frame with a die pad size larger than the chip as shown in Table 2 was used, and samples were prepared by molding under the same conditions as in the corresponding Examples 1 to 4 above. did. This is shown in FIGS. 3 and 4. In the figure, l is a package, 2 is a trip pin, 3 is a chip, and 4 is a die pad. A performance test was conducted on this sample in the same manner as in the example, and the results are shown in Table 2 below.
（以下余白）
第２表から明らかなように、比較別品は実施別品に比べ
てパッケージクラックの発生量が大幅に増加しているこ
とがわかる。(Left space below) As is clear from Table 2, the amount of package cracks generated in the comparative product was significantly increased compared to the tested product.
第１図はこの発明の一実施例の平面図、第２図はその断
面図、第３図は従来例の平面図、第４図はその断面図で
ある。
１・・・パッケージ ２・・・ツリピン ３・・・チッ
プ４・・・グイパッド
特許出願人 日東電気工業株式会社 −第４図
第３図FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a sectional view thereof, FIG. 3 is a plan view of a conventional example, and FIG. 4 is a sectional view thereof. 1...Package 2...Tsuripin 3...Chip 4...Guipad Patent Applicant Nitto Electric Industry Co., Ltd. -Figure 4Figure 3
Claims (2)
置された状態で熱硬化性樹脂により樹脂封止された半導
体装置において、ダイパッドが半導体素子の底面よりも
小形に形成されていることを特徴とする半導体装置。(1) A semiconductor device in which a semiconductor element is mounted on a die pad of a lead frame and sealed with a thermosetting resin, characterized in that the die pad is formed smaller than the bottom surface of the semiconductor element. semiconductor devices.
６０ｍｍ＾２〜４００ｍｍ＾２であり、ダイパッドの半
導体素子載置面の面積が４ｍｍ＾２〜１６ｍｍ＾２であ
り、かつ熱硬化性樹脂による封止パッケージの厚みが１
．５ｍｍ〜４．０ｍｍに設定されている特許請求の範囲
第１項記載の半導体装置。(2) The semiconductor element has a flat plate shape, the area of the bottom surface is 60 mm^2 to 400 mm^2, the area of the semiconductor element mounting surface of the die pad is 4 mm^2 to 16 mm^2, and it is thermoset The thickness of the sealed package made of plastic resin is 1
．． The semiconductor device according to claim 1, wherein the thickness is set to 5 mm to 4.0 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038625A JP2534251B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038625A JP2534251B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63204753A true JPS63204753A (en) | 1988-08-24 |
| JP2534251B2 JP2534251B2 (en) | 1996-09-11 |
Family
ID=12530421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62038625A Expired - Lifetime JP2534251B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2534251B2 (en) |
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| US5683944A (en) * | 1995-09-01 | 1997-11-04 | Motorola, Inc. | Method of fabricating a thermally enhanced lead frame |
| WO1998009329A1 (en) * | 1996-08-29 | 1998-03-05 | Hitachi, Ltd. | Resin-sealed semiconductor device and method of manufacturing the same |
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| US6558980B2 (en) | 1996-12-26 | 2003-05-06 | Yoshinori Miyaki | Plastic molded type semiconductor device and fabrication process thereof |
| SG97850A1 (en) * | 1993-03-22 | 2003-08-20 | Motorola Inc | Semiconductor device having x-shaped die support member and method for making the same |
| US6692989B2 (en) | 1999-10-20 | 2004-02-17 | Renesas Technology Corporation | Plastic molded type semiconductor device and fabrication process thereof |
| US6989334B2 (en) | 1998-03-20 | 2006-01-24 | Renesas Technology Corp. | Manufacturing method of a semiconductor device |
| CN100385658C (en) * | 2003-05-28 | 2008-04-30 | 雅马哈株式会社 | Lead frame and semiconductor device using the same |
| JP2010178171A (en) * | 2009-01-30 | 2010-08-12 | Kyocera Kinseki Corp | Piezoelectric oscillator |
| JP2010258424A (en) * | 2009-03-31 | 2010-11-11 | Sumitomo Bakelite Co Ltd | Method for manufacturing semiconductor device |
| CN109524389A (en) * | 2017-09-19 | 2019-03-26 | 东芝存储器株式会社 | Semiconductor device |
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| US5378656A (en) * | 1992-03-27 | 1995-01-03 | Hitachi, Ltd. | Leadframe, semiconductor integrated circuit device using the same, and method of and process for fabricating the same |
| US5637913A (en) * | 1992-03-27 | 1997-06-10 | Hitachi, Ltd. | Leadframe semiconductor integrated circuit device using the same and method of and process for fabricating the two |
| EP0617464A3 (en) * | 1993-03-22 | 1995-05-31 | Motorola Inc | Semiconductor device having X-shaped die support member and method for making the same. |
| SG97850A1 (en) * | 1993-03-22 | 2003-08-20 | Motorola Inc | Semiconductor device having x-shaped die support member and method for making the same |
| CN1118873C (en) * | 1993-03-22 | 2003-08-20 | 摩托罗拉公司 | Semiconductor device having X-shaped die support member and method for making the same |
| EP0669650A2 (en) * | 1994-02-22 | 1995-08-30 | Siemens Aktiengesellschaft | Container for semiconductor device and method for manufacturing |
| EP0669650A3 (en) * | 1994-02-22 | 1997-03-19 | Siemens Ag | Container for semiconductor device and method for manufacturing. |
| US5683944A (en) * | 1995-09-01 | 1997-11-04 | Motorola, Inc. | Method of fabricating a thermally enhanced lead frame |
| WO1998009329A1 (en) * | 1996-08-29 | 1998-03-05 | Hitachi, Ltd. | Resin-sealed semiconductor device and method of manufacturing the same |
| US6558980B2 (en) | 1996-12-26 | 2003-05-06 | Yoshinori Miyaki | Plastic molded type semiconductor device and fabrication process thereof |
| US6943456B2 (en) | 1996-12-26 | 2005-09-13 | Hitachi Ulsi Systems Co., Ltd. | Plastic molded type semiconductor device and fabrication process thereof |
| US7678706B2 (en) | 1998-03-20 | 2010-03-16 | Renesas Technology Corp. | Method of manufacturing a semiconductor device |
| US6989334B2 (en) | 1998-03-20 | 2006-01-24 | Renesas Technology Corp. | Manufacturing method of a semiconductor device |
| US7247576B2 (en) | 1998-03-20 | 2007-07-24 | Renesas Technology Corp. | Method of manufacturing a semiconductor device |
| US6441400B1 (en) | 1998-08-31 | 2002-08-27 | Hitachi, Ltd. | Semiconductor device and method of fabricating the same |
| US6340837B1 (en) | 1998-08-31 | 2002-01-22 | Hitachi, Ltd. | Semiconductor device and method of fabricating the same |
| US6476479B2 (en) | 1998-08-31 | 2002-11-05 | Hitachi, Ltd. | Semiconductor device and method of fabricating the same |
| US6692989B2 (en) | 1999-10-20 | 2004-02-17 | Renesas Technology Corporation | Plastic molded type semiconductor device and fabrication process thereof |
| CN100385658C (en) * | 2003-05-28 | 2008-04-30 | 雅马哈株式会社 | Lead frame and semiconductor device using the same |
| US7964942B2 (en) | 2003-05-28 | 2011-06-21 | Yamaha Corporation | Lead frame having a die stage smaller than a semiconductor device and a semiconductor device using the same |
| JP2010178171A (en) * | 2009-01-30 | 2010-08-12 | Kyocera Kinseki Corp | Piezoelectric oscillator |
| JP2010258424A (en) * | 2009-03-31 | 2010-11-11 | Sumitomo Bakelite Co Ltd | Method for manufacturing semiconductor device |
| CN109524389A (en) * | 2017-09-19 | 2019-03-26 | 东芝存储器株式会社 | Semiconductor device |
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| Publication number | Publication date |
|---|---|
| JP2534251B2 (en) | 1996-09-11 |
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