JPS63204718A - Organic metal vapor growth device - Google Patents
Organic metal vapor growth deviceInfo
- Publication number
- JPS63204718A JPS63204718A JP3850987A JP3850987A JPS63204718A JP S63204718 A JPS63204718 A JP S63204718A JP 3850987 A JP3850987 A JP 3850987A JP 3850987 A JP3850987 A JP 3850987A JP S63204718 A JPS63204718 A JP S63204718A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- source cell
- gas
- beam source
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title description 4
- 239000002184 metal Substances 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 13
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract 5
- 239000007789 gas Substances 0.000 description 42
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［概要］
減圧式有機金属気相成長装置において、分子線源セルを
設け、第１原料ガスより第２原料ガスに切り換える際、
分子線源セルから被成長結晶基板面に所望の分子線を照
射して保護するように構成する。そうすれば、成長面が
損傷されずに、高品質で且つ急峻な接合をもった成長層
が得られる。[Detailed Description of the Invention] [Summary] In a reduced pressure type organometallic vapor phase growth apparatus, when a molecular beam source cell is provided and the first source gas is switched to the second source gas,
The structure is such that a desired molecular beam is irradiated from a molecular beam source cell onto the surface of a crystal substrate to be grown to protect it. In this way, a growth layer with high quality and steep junctions can be obtained without damaging the growth surface.
［産業上の利用分野］
本発明は有機金属気相成長装置（ＭＯＣＶＤ装置）の改
善に関する。[Industrial Application Field] The present invention relates to an improvement in a metal organic chemical vapor deposition apparatus (MOCVD apparatus).
半導体装置の製造方法において、半導体基板上に半導体
結晶層を成長するエピタキシャル成長法が知られており
、これは最も重要な基礎技術である。In the manufacturing method of semiconductor devices, an epitaxial growth method is known in which a semiconductor crystal layer is grown on a semiconductor substrate, and this is the most important basic technology.
そのようなエピタキシャル成長法のうち、最近、有機金
属熱分解気相成長法（Ｍ ＯＣＶ Ｄ ： Ｍｅｔａｌ
Ｏｒｇａｎｉｃ Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ Ｄ
ｅｐｏｓｉｔｉｏｎ ）が開発されており、これは有機
金属ガスを原料ガスにして、それを熱分解させて結晶成
長する方法で、この方式は減圧中（常圧でも可）におい
て低温度で成長でき、例えば、化合物半導体デバイスを
製造する場合、化合物半導体層の急峻なヘテロ接合を容
易に得られる利点のあるものである。Among such epitaxial growth methods, metal organic pyrolysis vapor phase epitaxy (MOCVD) has recently been used.
Organic Chemical Vapor D
This method uses organic metal gas as a raw material gas and thermally decomposes it to grow crystals. This method allows growth at low temperature under reduced pressure (normal pressure is also possible). When manufacturing a compound semiconductor device, this method has the advantage that a steep heterojunction of a compound semiconductor layer can be easily obtained.
しかし、ＭＯＣＶＤ法を適用するＭＯＣＶＤ装置では、
急峻な接合が得られると共に、接合面がダメージ（損傷
）を受けないように成長することが望まれている。However, in MOCVD equipment that applies the MOCVD method,
It is desired that a steep bond be obtained and that the bonded surface be grown without being damaged.
［従来の技術］
従来より種々の構造のＭＯＣＶＤ装置が提案されている
が、複数の反応室を有する（多室型の）ＭＯＣＶＤ装置
の概要断面図を第４図に示しており、図において、１は
二室（ＩＡ、 ＩＢ）を有する反応管、２は被成長結晶
基板（ウェハー）、３はウェハーを載置するサセプタ、
４はウェハーを加熱する高周波加熱コイル、５は真空排
気口、６は第１原料ガスの流入口、７は第２原料ガスの
流入口。[Prior Art] MOCVD apparatuses with various structures have been proposed in the past, and a schematic cross-sectional view of a (multi-chamber type) MOCVD apparatus having a plurality of reaction chambers is shown in FIG. 1 is a reaction tube having two chambers (IA, IB), 2 is a crystal substrate to be grown (wafer), 3 is a susceptor on which the wafer is placed,
4 is a high-frequency heating coil for heating the wafer; 5 is a vacuum exhaust port; 6 is a first source gas inlet; and 7 is a second source gas inlet.
８はサセプタを移動させる回転軸で、反応管やサセプタ
などの構成部材は高純度な透明石英で作成されている。8 is a rotating shaft for moving the susceptor, and components such as the reaction tube and the susceptor are made of high-purity transparent quartz.
このようなＭＯＣＶＤ装置を用いて、例えば、ＩｎＰ基
十反（ウェハー）２の上にＩｎＰ層とＩｎＧａＡｓ層と
を成長する場合、まず、第４図に示す位置（ＩＡ室）に
ウェハー２を載せたサセプタ３を配置し、第１原料ガス
流入口６からトリエチルインジウム（ＴＥＩ）とホスフ
ィン（ＰＨ３）を流入して、６００℃に加熱したウェハ
ー２面上に到達させ、その原料ガスを加熱分解してＩｎ
Ｐ層を成長する。一方、第２原料ガスの流入ロアからＩ
Ｂ室にはＰＨ３のみ流入させておく。次いで、ＩｎＰ層
の成長が終わると、回転軸８でサセプタをＩＢ室に回転
して移動（点線で示す位置）させ、第２原料ガスを切り
換えて、ガス流入ロアからＴＥＩとトリエチルガリウム
（ＴＥＧ）とアルシン（ＡＳＨ３）を流入し、加熱した
ウェハー２面上に到達させて、その原料ガスを加熱分解
してＩｎＧａＡｓ層を成長する。For example, when growing an InP layer and an InGaAs layer on an InP-based wafer 2 using such a MOCVD apparatus, the wafer 2 is first placed in the position shown in FIG. 4 (IA chamber). A susceptor 3 is arranged, and triethyl indium (TEI) and phosphine (PH3) are flowed in from the first raw material gas inlet 6 to reach the surface of the wafer 2 heated to 600°C, and the raw material gas is thermally decomposed. In
Grow P layer. On the other hand, I
Only PH3 is allowed to flow into chamber B. Next, when the growth of the InP layer is completed, the susceptor is rotated and moved to the IB chamber by the rotating shaft 8 (the position indicated by the dotted line), the second raw material gas is switched, and TEI and triethyl gallium (TEG) are introduced from the gas inflow lower. and arsine (ASH3) are flowed in and reached onto the two heated wafer surfaces, and the raw material gas is thermally decomposed to grow an InGaAs layer.
このような多室型のＭＯＣＶＤ装置を用いる理由は、出
来るだけ速く原料ガスを切り換えて、急峻なＩｎＰ層と
ＩｎＧａＡｓ層との接合を得たいためであり、この型式
の構造によれば単室型の装置より一層急峻な接合を作製
することができる。The reason for using such a multi-chamber MOCVD device is to switch the raw material gas as quickly as possible to obtain a steep bond between the InP layer and the InGaAs layer. It is possible to create steeper joints than with the previous device.
なお、予め反応管のＩＢ室にＰＨ，を流入させておくわ
けは、ＦＰ（Ｐ）が蒸発し易いため、ウェハーをＩＢ室
に移動した時、成長したＩｎＰ層から燐が蒸発するのを
防止するためである。The reason why PH is allowed to flow into the IB chamber of the reaction tube in advance is to prevent phosphorus from evaporating from the grown InP layer when the wafer is moved to the IB chamber, since FP (P) easily evaporates. This is to do so.
［発明が解決しようとする問題点コ
しかし、このような急峻な接合を得るために考案した構
造の多室型ＭＯＣＶＤ装置を使用しても、原料ガスの切
換えタイミングが不適当であると、両原料ガスの混合が
起こり、また、反応管内にガス溜りができると、その残
存ガスの影響を受けて成長層の遷移領域（接合領域のこ
と）の品質が低下する。[Problems to be Solved by the Invention] However, even if a multi-chamber MOCVD apparatus designed to obtain such a steep bond is used, if the timing of switching the raw material gas is inappropriate, both problems may occur. When mixing of raw material gases occurs and a gas pocket is formed in the reaction tube, the quality of the transition region (junction region) of the growth layer deteriorates due to the influence of the residual gas.
更に、多室型の成長装置はサセプタを回転して移動する
際に、初めのＩＡ室の原料ガスが混入して（る場合があ
り、同様に遷移領域の品質を悪くして、急峻な接合の形
成に悪影響を与える。Furthermore, when the susceptor is rotated and moved in a multi-chamber growth apparatus, the raw material gas from the first IA chamber may get mixed in, which can also degrade the quality of the transition region and cause steep junctions. adversely affects the formation of
本発明はこのような欠点を低減するＭＯＣＶＤ装置を提
案するものである。The present invention proposes an MOCVD apparatus that reduces such drawbacks.
［問題点を解決するための手段］
その目的は、ウェハー（被成長結晶基板）に対向する位
置に分子線源セルを設け、第１原料ガスから第２原料ガ
スに切り換える際に、該分子線源セルからウェハー面に
所望ガスの分子線を照射するように構成したＭ’０ＣＶ
Ｄ装置によって達成される。[Means for solving the problem] The purpose is to provide a molecular beam source cell at a position facing the wafer (crystal substrate to be grown), and when switching from the first raw material gas to the second raw material gas, the molecular beam source cell is M'0CV configured to irradiate the wafer surface with a molecular beam of the desired gas from the source cell
This is accomplished by the D device.
［作用］
即ち、本発明にかかるＭ ＯＣＶ Ｄ装置は、単室型の
減圧式成長装置であって、分子線源セルを設けて、原料
ガスの切換え時に、分子線源セルからウェハー面に所望
ガスの分子線を照射して保護する構造にする。そうすれ
ば、接合面が損傷されず、高品質で急峻な接合の成長層
が得られる。[Function] That is, the MOCVD apparatus according to the present invention is a single-chamber type reduced-pressure growth apparatus, and is provided with a molecular beam source cell, and when changing the raw material gas, the MOCVD apparatus is a single-chamber type reduced-pressure growth apparatus. Create a structure that protects it by irradiating it with gas molecular beams. In this way, the bonding surface is not damaged and a high quality, steep bond growth layer can be obtained.
［実施例］ 以下、図面を参照して実施例によって詳細に説明する。[Example] Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図は本発明にかかるＭＯＣＶＤ装置の概要断面図を
示しており、１１は反応管、１２はウェハー（被成長結
晶基板）、１３はウェハーを加熱するヒータ、１４は原
料ガスのガス流入口、１５は分子線源セル、 １６は分
子線源セルのシャック−２１７はロータリーポンプにｉ
ｌｌしる排気口、１８はターボポンプに通じる排気口で
、■は開閉バルブである。FIG. 1 shows a schematic sectional view of the MOCVD apparatus according to the present invention, in which 11 is a reaction tube, 12 is a wafer (crystal substrate to be grown), 13 is a heater for heating the wafer, and 14 is a gas inlet for raw material gas. , 15 is a molecular beam source cell, 16 is a molecular beam source cell shack, and 217 is a rotary pump with i
18 is an exhaust port leading to the turbo pump, and ■ is an opening/closing valve.
図のように、本発明にかかるＭＯＣＶＤ装置は単室であ
り、ウェハーを縦方向に配置して、そのウェハー面にセ
ル内の分子線ガスが当たるように、分子線源セル１５を
ウェハー１２の対向した位置に配置しである。As shown in the figure, the MOCVD apparatus according to the present invention has a single chamber, and the wafer is arranged vertically, and a molecular beam source cell 15 is placed above the wafer 12 so that the molecular beam gas in the cell hits the wafer surface. They are placed in opposing positions.
このようなＭＯＣＶＤ装置の操作の状態図を第２図（ａ
）および（ｂ）に示しており、同図（ａ）は結晶層を成
長中の状態図で、ガス流入口１４から原料ガスを流入中
であり、且つ、分子線源セルのシャッター１６は閉じら
れていて、排気口１７からロータリーポンプ（図示せず
）で排気されている。また、第２図（ｂｌは成長が中止
されて、原料ガスを切換え中の状態図で、ガス流入口１
４はバルブＶで閉じられ、分子線源セルのシャッター１
６が開けられてウェハー１２面を分子線源セルから照射
した分子線ガスで保護しており、排気口１８からターボ
ポンプ（図示せず）で排気中の状態を示している。A state diagram of the operation of such MOCVD equipment is shown in Figure 2 (a
) and (b), and (a) is a state diagram during the growth of a crystal layer, in which source gas is flowing in from the gas inlet 14, and the shutter 16 of the molecular beam source cell is closed. The air is evacuated from an exhaust port 17 by a rotary pump (not shown). In addition, Fig. 2 (bl is a state diagram when growth is stopped and the source gas is being switched; the gas inlet 1
4 is closed by a valve V, and the shutter 1 of the molecular beam source cell
6 is opened to protect the surface of the wafer 12 with the molecular beam gas irradiated from the molecular beam source cell, and the state is shown in which exhaust port 18 is being evacuated by a turbo pump (not shown).
このように操作できる構造のＭＯＣＶＤ装置を用いれば
、接合面が損傷されず、急峻な接合をもった成長層が得
られる。If a MOCVD apparatus having a structure that can be operated in this manner is used, the bonding surface will not be damaged and a grown layer with a steep bond can be obtained.
このＭＯＣＶＤ装置を用いて、ＩｎＰ５板上にＩｎＰ層
とＩｎＧａＡｓ層とを連続成長する具体例を説明する。A specific example of successively growing an InP layer and an InGaAs layer on an InP5 board using this MOCVD apparatus will be described.
第３図に原料ガスの流入状況を示すタイムチャートを示
している。まず、ＭＯＣＶＤ装置を第２図（ａｌの状態
にして、ＩｎＰ基板を６００℃まで加熱し、その間は予
めキャリアガスのＨ２（水素）とＰＨ，を流しておく。FIG. 3 shows a time chart showing the inflow situation of raw material gas. First, the MOCVD apparatus is brought into the state shown in FIG. 2 (al), and the InP substrate is heated to 600° C., during which carrier gases H2 (hydrogen) and PH are flowed in advance.
次いで、ＴＥＩを流入し、減圧度を０．１気圧程度にし
て、ＴＥＩとＰＨ３との原料ガス（第１原料ガス）を加
熱分解してＩｎＰ層を成長する。Next, TEI is introduced, the degree of pressure reduction is set to about 0.1 atm, and the raw material gases of TEI and PH3 (first raw material gas) are thermally decomposed to grow an InP layer.
次いで、ＭＯＣＶＤ装置を第２図（ｂ）の状態に切り換
え、ターボポンプで排気して１０−’ＴｏｒｒＯ高真空
に排気する。この切換え時は、最初にシャッター１６を
開けて分子線源セル１５からｅ（Ｐ２．Ｐ４）の分子線
ガスをウェハー１２に照射しておいて、第２図（ｈ）の
状態に切り換える。そうすれば、ＩｎＰ層からの燐の蒸
発が防止され保護される。Next, the MOCVD apparatus is switched to the state shown in FIG. 2(b) and evacuated to a high vacuum of 10-'TorrO using a turbo pump. At the time of this switching, the shutter 16 is first opened to irradiate the wafer 12 with molecular beam gas e (P2.P4) from the molecular beam source cell 15, and then the state is switched to the state shown in FIG. 2(h). In this way, evaporation of phosphorus from the InP layer is prevented and protected.
且つ、この切換え時に、まず分子線源セルから分子線を
ウェハーに照射しておくため、原料ガスの切換えタイミ
ングが遅れる不都合もない。Moreover, since the molecular beam is first irradiated onto the wafer from the molecular beam source cell at the time of this switching, there is no inconvenience that the timing of switching the source gas is delayed.
次いで、ＭＯＣＶＤ装置を第２図（ａ）の状態に戻し、
ＴＥＩとＴＥＧとＡｓＨ３との原料ガス（第２原料ガス
）を流入し、加熱分解してＩｎＧａＡｓ層を成長する。Next, return the MOCVD apparatus to the state shown in FIG. 2(a),
Raw material gases (second raw material gases) of TEI, TEG, and AsH3 are introduced and thermally decomposed to grow an InGaAs layer.
この例から判るように、本発明にかかるＭＯＣＶＤ装置
は原料ガスの切換え速度は排気系に依存し、且つ、分子
線源セルによって、切換え時に分子線で保護する方法を
採っているため、結晶層面が損傷を受けずに原料ガスを
切り換えることができ、しかも、急峻な接合が品質良く
作製することができる。As can be seen from this example, in the MOCVD apparatus according to the present invention, the switching speed of the source gas depends on the exhaust system, and the molecular beam source cell protects the crystal layer surface during switching. The raw material gas can be switched without being damaged, and steep joints can be made with good quality.
［発明の効果］
以上の説明から明らかなように、本発明にかかるＭＯＣ
ＶＤ装置によれば、接合面が損傷されず、急峻な接合の
高品質な成長層が得られて、半導体装置の性能向上に貢
献するものである。[Effect of the invention] As is clear from the above explanation, the MOC according to the present invention
According to the VD apparatus, a high-quality growth layer with a steep junction can be obtained without damaging the junction surface, contributing to improving the performance of semiconductor devices.
第１図は本発明にかかるＭＯＣＶＤ装置の断面図、第２
図（ａ）、 （ｂ）はその動作状態を示す図、第３図は
原料ガスの流入状況のタイムチャート図、第４図は従来
の多室型のＭＯＣＶＤ装置の断面図である。
図において、
１１は縦型反応管、
１２は被成長結晶基板（ウェハー）、
１３はヒータ、
１４は原料ガスのガス流入口、
１５は分子線源セル、
１６はシャッター、
１７、１８は真空排気口、
■は開閉バルブFIG. 1 is a sectional view of the MOCVD apparatus according to the present invention, and FIG.
Figures (a) and (b) are diagrams showing its operating state, Figure 3 is a time chart diagram of the inflow of raw material gas, and Figure 4 is a sectional view of a conventional multi-chamber MOCVD apparatus. In the figure, 11 is a vertical reaction tube, 12 is a crystal substrate to be grown (wafer), 13 is a heater, 14 is a gas inlet for source gas, 15 is a molecular beam source cell, 16 is a shutter, 17 and 18 are vacuum exhausts ■Open/close valve
Claims (1)
面に結晶層を成長させる有機金属気相成長装置において
、被成長結晶基板に対向する位置に分子線源セルを設け
、前記原料ガスを第１原料ガスから第２原料ガスに切り
換える際に、該分子線源セルから被成長結晶基板面に所
望の分子線を照射するように構成したことを特徴とする
有機金属気相成長装置。In an organometallic vapor phase growth apparatus in which a crystal layer is grown on the surface of a crystal substrate to be grown in a reduced pressure atmosphere by flowing a raw material gas, a molecular beam source cell is provided at a position facing the crystal substrate to be grown, and the source gas is 1. An organometallic vapor phase growth apparatus characterized in that, when switching from one source gas to a second source gas, a desired molecular beam is irradiated from the molecular beam source cell onto the surface of a crystal substrate to be grown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3850987A JPS63204718A (en) | 1987-02-20 | 1987-02-20 | Organic metal vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3850987A JPS63204718A (en) | 1987-02-20 | 1987-02-20 | Organic metal vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63204718A true JPS63204718A (en) | 1988-08-24 |
Family
ID=12527235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3850987A Pending JPS63204718A (en) | 1987-02-20 | 1987-02-20 | Organic metal vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63204718A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06333856A (en) * | 1993-05-25 | 1994-12-02 | Nec Corp | Thin film forming device |
| US5730094A (en) * | 1996-12-10 | 1998-03-24 | General Motors Corporation | Alternator field current control for active driveline damping |
-
1987
- 1987-02-20 JP JP3850987A patent/JPS63204718A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06333856A (en) * | 1993-05-25 | 1994-12-02 | Nec Corp | Thin film forming device |
| US5730094A (en) * | 1996-12-10 | 1998-03-24 | General Motors Corporation | Alternator field current control for active driveline damping |
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