JPS6320461A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPS6320461A JPS6320461A JP16525186A JP16525186A JPS6320461A JP S6320461 A JPS6320461 A JP S6320461A JP 16525186 A JP16525186 A JP 16525186A JP 16525186 A JP16525186 A JP 16525186A JP S6320461 A JPS6320461 A JP S6320461A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- thin
- transparent electrode
- electrode film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 86
- 239000010408 film Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 238000002845 discoloration Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- -1 513N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜形成装置に関するもので、さらに詳しくい
えば、金属酸化物からなる透明電極薄膜に着色や組成変
化等の損傷を引き起こすことなく、該透明電極薄膜上に
新たな薄膜を形成することを可能にする薄膜形成装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film forming apparatus, and more specifically, the present invention relates to a thin film forming apparatus. The present invention relates to a thin film forming apparatus that makes it possible to form a new thin film on an electrode thin film.
従来の技術
金属酸化物からなる透明電極薄膜は各種平面表示装置に
おいて欠かすことのできない構成要素である。これらの
表示装置の作製では、透明電極薄膜の上に薄膜をさらに
重ねて形成することが一般に行われている。ここでは、
代表的な平面表示装置である薄１ｉＥＬ表示装置を例に
とり、本発明に関係する従来の技術を説明する。2. Description of the Related Art Transparent electrode thin films made of metal oxides are essential components in various flat display devices. In the production of these display devices, it is common practice to further form a thin film on top of the transparent electrode thin film. here,
DESCRIPTION OF THE PREFERRED EMBODIMENTS Conventional technology related to the present invention will be explained by taking a thin 1iEL display device, which is a typical flat display device, as an example.
第２図に一般的な薄膜ＥＬ表示装置の断面図を示す。FIG. 2 shows a cross-sectional view of a typical thin film EL display device.
ガラス基板１上にまず透明電極薄膜２を形成する。この
透明電極薄膜２は、ＳｎＯ２や、酸化インジウムに錫を
添加したＩＴ○等で作製される。透明電極薄膜２の上に
は第１絶縁膜３が形成される。First, a transparent electrode thin film 2 is formed on a glass substrate 1. This transparent electrode thin film 2 is made of SnO2, IT○, etc. in which tin is added to indium oxide. A first insulating film 3 is formed on the transparent electrode thin film 2 .
この第１絶縁膜３には例えばＴａ１ｌｓ、Ａｌ２Ｏ３，
５１３Ｎ４、Ｙ２Ｏ，を用いる。第１絶縁膜３の上には
発光膜４を形成する。発光膜４として使用される代表的
な物質は、λ（ｎを添加したＺｎＳである。発光膜４を
完全におおうように第２絶縁膜５が形成される。この第
２絶縁膜５には、第１絶縁膜３と同様にＴａ２０５等が
用いられる。第２絶縁膜５の上にはもう一方の電極であ
る背面電極６が形成される。This first insulating film 3 includes, for example, Ta1ls, Al2O3,
513N4, Y2O, is used. A light emitting film 4 is formed on the first insulating film 3. A typical material used as the light-emitting film 4 is ZnS doped with λ(n). A second insulating film 5 is formed to completely cover the light-emitting film 4. , Ta205 or the like is used similarly to the first insulating film 3. On the second insulating film 5, a back electrode 6, which is the other electrode, is formed.
背面電極６には普通ＡＩを用いる。Generally, AI is used for the back electrode 6.
このように多層の薄膜を形成する際には、いろいろな薄
膜形成法が用いられる。例えば第１絶縁膜３を形成する
方法としては、通常、スパッタ法、プラズマＣＶＤ法、
電子ビーム蒸着法など装置内で荷電粒子を発生させて膜
形成を行う方法が用いられる。この第１絶縁膜３を高周
波スパッタ法で形成するのに従来から用いられてきた装
置の構成例を第３図に示す。When forming a multilayer thin film in this way, various thin film forming methods are used. For example, the method for forming the first insulating film 3 is usually a sputtering method, a plasma CVD method,
A method of forming a film by generating charged particles within an apparatus, such as electron beam evaporation, is used. FIG. 3 shows an example of the configuration of an apparatus conventionally used to form the first insulating film 3 by high-frequency sputtering.
ターゲット電極ｌＯにはスパッタターゲット８が取り付
けである。透明電極薄膜２が既に形成されているガラス
基板ｌは、透明電極薄膜２がスパッタターゲット８に対
向するように、基板支持台７上に支えられている。この
場合、透明電極薄膜からの配線取出しのため、金属マス
クなどを基板に密着させて透明電極薄膜の一部を覆い、
最終的に透明電極薄膜の一部を露出させるようにしてい
る。A sputter target 8 is attached to the target electrode IO. A glass substrate l on which a transparent electrode thin film 2 has already been formed is supported on a substrate support 7 such that the transparent electrode thin film 2 faces a sputtering target 8 . In this case, in order to take out the wiring from the transparent electrode thin film, a metal mask or the like is brought into close contact with the substrate to cover a part of the transparent electrode thin film.
Finally, a part of the transparent electrode thin film is exposed.
基板支持台７とターゲット電極１０を接続して高周波電
源１１が設けられる。基板支持台７の側は接地される。A high frequency power source 11 is provided connecting the substrate support 7 and the target electrode 10. The side of the substrate support stand 7 is grounded.
上記の装置を稼動させると、スパッタターゲットから電
子やイオンなどの荷電粒子が飛び出し、対向している基
板に薄膜が形成される。When the above-mentioned apparatus is operated, charged particles such as electrons and ions are ejected from the sputter target, and a thin film is formed on the opposing substrate.
発明が解決しようとする問題点
このとき、第３図に示すような基板支持機構を用いて膜
形成を行うと、透明電極薄膜に電流が流れる。この電流
が一定値を越えると、文献（Ｍ、Ｐ。Problems to be Solved by the Invention At this time, when film formation is performed using a substrate support mechanism as shown in FIG. 3, a current flows through the transparent electrode thin film. When this current exceeds a certain value, the literature (M, P.
Ｒ，パニカー、Ｗ、Ｆ、エシンガー著、シャーナルオブ
エレクトロケミカル ソサエティ、１２８巻、１９４
３ページ、１９８１年）に記載されているように、透明
電極薄膜内で還元反応が発生し、酸素が放出され、その
結果、透明電極薄膜が黒化するという問題が生じる。ま
た、酸素の放出により透明電極薄膜の組成が変化し、電
気抵抗が増大するという問題も同時に生じる。R. Panikkar, W. F. Essinger, Journal of Electrochemical Society, Volume 128, 194.
3, p. 3, 1981), a reduction reaction occurs within the transparent electrode thin film, and oxygen is released, resulting in the problem of blackening of the transparent electrode thin film. Furthermore, the composition of the transparent electrode thin film changes due to the release of oxygen, resulting in the problem that the electrical resistance increases.
以上で述べたような透明電極薄膜の黒化や電気抵抗の増
大は、平面表示装置の歩留りや性能を著しく損うもので
あり、改善が望まれていた。The blackening of the transparent electrode thin film and the increase in electrical resistance as described above significantly impair the yield and performance of flat panel display devices, and improvements have been desired.
問題点を解決するための手段
上記の問題点を解決するための本発明の薄膜形成装置は
、透明電極薄膜を形成した基板上に薄膜を形成する際、
該透明電極薄膜が該薄膜形成装置のいかなる部分からも
電気的に絶縁されるような基板支持機構を有する。Means for Solving the Problems The thin film forming apparatus of the present invention for solving the above problems has the following features: When forming a thin film on a substrate on which a transparent electrode thin film is formed,
A substrate support mechanism is provided such that the transparent electrode thin film is electrically insulated from any part of the thin film forming apparatus.
すなわち、本発明に従うと、電極薄膜を表面に形成した
基板の該電極薄膜上に重ねて薄膜を形成する装置であっ
て、電極薄膜を表面に形成した基板を支持する支持機構
と、スパッタターゲットを保持するターゲット電極と、
該基板と該ターゲット電極との間に電圧を印加する手段
とを備え、該支持機構が該電極薄膜を電気的に完全に絶
縁しながら上記基板を支持することを特徴とする薄膜形
成装置が提供される。That is, according to the present invention, there is provided an apparatus for forming a thin film on a substrate having a thin electrode film formed thereon, which comprises a support mechanism for supporting the substrate having the thin electrode film formed on the surface thereof, and a sputter target. a target electrode to hold;
A thin film forming apparatus is provided, comprising means for applying a voltage between the substrate and the target electrode, and the supporting mechanism supports the substrate while electrically insulating the electrode thin film completely. be done.
本発明の１実施例に従うと、上記支持機構は、該基板上
の電極薄膜およびその上に形成される薄膜の総厚より高
い段差部を備え、該段差部で該基板を支持するように構
成されるのが好ましい。According to one embodiment of the present invention, the support mechanism is configured to include a stepped portion that is higher than the total thickness of the electrode thin film on the substrate and the thin film formed thereon, and to support the substrate at the stepped portion. Preferably.
さらに本発明の好ましい態様に従うと、上記薄膜形成装
置は高周波スパッタ装置であり、上記スパッタターゲッ
トを保持するターゲット電極は、該基板上の該電極薄膜
に対向して配置されていることを特徴とする特
作用
本発明の薄膜形成装置においては、透明電極薄膜が薄膜
形成装置のいかなる部分からも電気的に絶縁された状態
で薄膜の形成がなされるので、電極薄膜に荷電粒子が飛
来しても電極薄膜から薄膜形成装置に電流が流れること
がないため、従来の薄膜形成装置で問題になった透明電
極薄膜の黒化や電気抵抗の増大等の劣化の問題は生じな
い。Further, according to a preferred embodiment of the present invention, the thin film forming apparatus is a high frequency sputtering apparatus, and the target electrode holding the sputter target is disposed opposite to the electrode thin film on the substrate. Special Effects In the thin film forming apparatus of the present invention, the thin film is formed while the transparent electrode thin film is electrically insulated from any part of the thin film forming apparatus. Since no current flows from the thin film to the thin film forming apparatus, problems of deterioration such as blackening of the transparent electrode thin film and increase in electrical resistance, which have been problems with conventional thin film forming apparatuses, do not occur.
従って、本発明の薄膜形成装置を用いると、透明電極薄
膜を用いる電子装置を高性能且つ高製造歩留りで製造す
ることができる。Therefore, by using the thin film forming apparatus of the present invention, electronic devices using transparent electrode thin films can be manufactured with high performance and high manufacturing yield.
実施例
以下、添付の図面を参照して本発明の１実施例を説明す
る。Embodiment Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.
第１図に本発明の薄膜形成装置の１実施例の概略を示す
。第１図に示した薄膜形成装置の構成は、第３図に示し
た従来の薄膜形成装置とほとんど同じであり、ここでは
、両者で同一の部分の説明は省略する。異なっている重
要な点は、基板支持台７に所定の高さを有する段差９が
設けろれていることである。この段差９を設けることに
より、透明電極薄膜２と基板支持台７は電気的に絶縁さ
れ、かつ透明電極薄膜２の電極取り出し部分へのスパッ
タ粒子の飛来は阻止される。このような基板支持機構を
用いてスパッタ法により第一絶縁膜３を堆積すれば、透
明電極薄膜２に荷電粒子が飛来しても透明電極薄膜２か
ら基板支持台７に電流が流れることがない。FIG. 1 schematically shows an embodiment of the thin film forming apparatus of the present invention. The configuration of the thin film forming apparatus shown in FIG. 1 is almost the same as the conventional thin film forming apparatus shown in FIG. 3, and the explanation of the same parts will be omitted here. The important difference is that the substrate support 7 is provided with a step 9 having a predetermined height. By providing this step 9, the transparent electrode thin film 2 and the substrate support stand 7 are electrically insulated, and sputtered particles are prevented from flying into the electrode extraction portion of the transparent electrode thin film 2. If the first insulating film 3 is deposited by sputtering using such a substrate support mechanism, no current will flow from the transparent electrode thin film 2 to the substrate support 7 even if charged particles fly to the transparent electrode thin film 2. .
つぎに第１図に示した薄膜形成装置を用いて薄膜を形成
した１例を説明する。Next, an example of forming a thin film using the thin film forming apparatus shown in FIG. 1 will be described.
膜形成する部分の大きさは３０ｃ＋ｎＸ３０ｃｍとした
。The size of the area on which the film was formed was 30cm+n×30cm.
透明電極薄膜２は酸化インジウムにスズを添加した、い
わゆるＩＴＯ膜をフォトエツチング加工して形成し、ピ
ッチを２００〜５００μｍとした。段差９の高さは透明
電極薄膜２と基板支持台７との絶縁を確保し、かつ透明
電極薄膜２の配線取り出し部分への膜堆積を完全に防止
しなければならないため、最適な値が存在する。本実施
例では、０．２ｍｍ〜１．０市の範囲が適していた。膜
形成は、スパッタターゲットをＴａ、Ｏ，、スパッタガ
スをＡｒと０□の；見合ガスとし、ガス圧力１×１０′
−３〜５Ｘ１０−２Ｔｏｒｒとして行った。ガラス基板
１とスパッタターゲット８との距離は３〜８ｃｍとした
。The transparent electrode thin film 2 was formed by photoetching a so-called ITO film in which tin was added to indium oxide, and the pitch was set to 200 to 500 μm. The height of the step 9 must have an optimum value because it must ensure insulation between the transparent electrode thin film 2 and the substrate support 7 and completely prevent film deposition on the wiring extraction portion of the transparent electrode thin film 2. do. In this example, a range of 0.2 mm to 1.0 mm was suitable. For film formation, the sputtering target was Ta, O, and the sputtering gas was Ar and 0□, and the gas pressure was 1 x 10'.
-3 to 5×10 −2 Torr. The distance between the glass substrate 1 and the sputter target 8 was set to 3 to 8 cm.
以上述べた構成を有する薄膜形成装置により、透明電極
薄膜２の変色や抵抗増大をもたらすことなく膜厚１００
〜７００ｎｍのｉ’ａ２０ｓ膜を形成できた。With the thin film forming apparatus having the configuration described above, the film thickness can be increased to 100% without causing discoloration or increase in resistance of the transparent electrode thin film 2.
An i'a20s film of ~700 nm could be formed.
このようにして形成した第一絶縁膜を含む薄膜ＥＬ装置
を作製したところ、透明電極薄膜の劣化に起因する画素
欠陥は皆無であった。When a thin film EL device including the first insulating film formed in this manner was manufactured, there were no pixel defects due to deterioration of the transparent electrode thin film.
なお、以上で説明した薄膜形成装置は、本発明の一つの
実施例であり、本発明の趣旨を逸脱しない範囲で種々の
改造、改善を行い得ることは言うまでもない。さらに本
発明の薄膜形成装置は高周波スパッタ装置に限らず、他
のスパッタ装置やプラズマＣＶＤ装置、電子ビーム蒸着
装置であってもよい。The thin film forming apparatus described above is one embodiment of the present invention, and it goes without saying that various modifications and improvements can be made without departing from the spirit of the present invention. Furthermore, the thin film forming apparatus of the present invention is not limited to a high frequency sputtering apparatus, but may be other sputtering apparatuses, plasma CVD apparatuses, or electron beam evaporation apparatuses.
発明の効果
以上説明したように、本発明の薄膜作製装置を用いると
、平面表示装置など透明電極薄膜を構成要素とする電子
装置の作製において透明電極薄膜上に荷電粒子の発生を
伴う薄膜形成法により絶縁膜を形成する際、透明電極薄
膜の変色や抵抗増大を防止することができる。従って、
本発明はこのような電子装置の性能向上や製造歩留りの
向上に対し、極めて有効である。Effects of the Invention As explained above, when the thin film production apparatus of the present invention is used, a thin film formation method that involves generation of charged particles on a transparent electrode thin film can be used in the production of electronic devices such as flat display devices that have a transparent electrode thin film as a component. When forming an insulating film, it is possible to prevent discoloration and increase in resistance of the transparent electrode thin film. Therefore,
The present invention is extremely effective in improving the performance and manufacturing yield of such electronic devices.
第１図は、本発明の薄膜形成装置の構成例を示す図であ
り、
第２図は、ＥＬ平面表示装置の断面構造を示す図であり
、
第３図は、従来の薄膜形成装置の構成例を示す図である
。
（主な参照番号）
１・・ガラス基板、 ２・・透明電極薄膜、３・・
第１絶縁膜、 ４・・発光膜、５・・第２絶縁膜、
６・・背面電極、７・・基板支持台、FIG. 1 is a diagram showing a configuration example of a thin film forming apparatus of the present invention, FIG. 2 is a diagram showing a cross-sectional structure of an EL flat display device, and FIG. 3 is a diagram showing a configuration of a conventional thin film forming apparatus. It is a figure which shows an example. (Main reference numbers) 1...Glass substrate, 2...Transparent electrode thin film, 3...
1st insulating film, 4... light emitting film, 5... second insulating film,
6. Back electrode, 7. Substrate support stand,
Claims (3)
重ねて薄膜を形成する装置であって、該電極薄膜を表面
に形成した基板を支持する支持機構と、スパッタターゲ
ットを保持するターゲット電極と、該基板と該ターゲッ
ト電極との間に電圧を印加する手段とを備え、該支持機
構が該電極薄膜を電気的に絶縁しながら上記基板を支持
することを特徴とする薄膜形成装置。(1) An apparatus for forming a thin film on a substrate having a thin electrode film formed thereon, which includes a support mechanism that supports the substrate having the thin electrode film formed on its surface, and a target that holds a sputtering target. A thin film forming apparatus comprising an electrode and means for applying a voltage between the substrate and the target electrode, the support mechanism supporting the substrate while electrically insulating the electrode thin film.
上に形成される薄膜の総厚より大きい段差部を備え、該
段差部で該基板を支持するように構成されていることを
特徴とする特許請求の範囲第１項に記載の薄膜形成装置
。(2) The support mechanism is characterized in that it includes a step portion that is larger than the total thickness of the electrode thin film on the substrate and the thin film formed thereon, and is configured to support the substrate at the step portion. A thin film forming apparatus according to claim 1.
上記スパッタターゲットを保持するターゲット電極は、
該基板上の該電極薄膜に対向して配置されていることを
特徴とする特許請求の範囲第１項または第２項のいずれ
か１項に記載の薄膜形成装置。(3) The thin film forming device is a high frequency sputtering device,
The target electrode holding the sputter target is
3. The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is disposed opposite to the electrode thin film on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16525186A JPS6320461A (en) | 1986-07-14 | 1986-07-14 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16525186A JPS6320461A (en) | 1986-07-14 | 1986-07-14 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6320461A true JPS6320461A (en) | 1988-01-28 |
Family
ID=15808754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16525186A Pending JPS6320461A (en) | 1986-07-14 | 1986-07-14 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6320461A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01240647A (en) * | 1988-03-18 | 1989-09-26 | Hitachi Ltd | Sputtering device |
| JPH0322064U (en) * | 1989-07-11 | 1991-03-06 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068590A (en) * | 1983-09-24 | 1985-04-19 | 松下電器産業株式会社 | Method of forming insulating film |
-
1986
- 1986-07-14 JP JP16525186A patent/JPS6320461A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068590A (en) * | 1983-09-24 | 1985-04-19 | 松下電器産業株式会社 | Method of forming insulating film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01240647A (en) * | 1988-03-18 | 1989-09-26 | Hitachi Ltd | Sputtering device |
| JPH0322064U (en) * | 1989-07-11 | 1991-03-06 |
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