JPS63201098A - Production of organic single crystal - Google Patents
Production of organic single crystalInfo
- Publication number
- JPS63201098A JPS63201098A JP62033700A JP3370087A JPS63201098A JP S63201098 A JPS63201098 A JP S63201098A JP 62033700 A JP62033700 A JP 62033700A JP 3370087 A JP3370087 A JP 3370087A JP S63201098 A JPS63201098 A JP S63201098A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- org
- organic single
- crystal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims abstract description 8
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract 2
- 150000002894 organic compounds Chemical class 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 abstract description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical compound O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 abstract 2
- 229910003204 NH2 Inorganic materials 0.000 abstract 1
- 229910004679 ONO2 Inorganic materials 0.000 abstract 1
- 229910004727 OSO3H Inorganic materials 0.000 abstract 1
- 229910006069 SO3H Inorganic materials 0.000 abstract 1
- MDFFNEOEWAXZRQ-UHFFFAOYSA-N aminyl Chemical compound [NH2] MDFFNEOEWAXZRQ-UHFFFAOYSA-N 0.000 abstract 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 abstract 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 abstract 1
- 125000001893 nitrooxy group Chemical group [O-][N+](=O)O* 0.000 abstract 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241000190020 Zelkova serrata Species 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、有機単結晶の製造に関するものである。[Detailed description of the invention] [Industrial application field] This invention relates to the production of organic single crystals.
この発明は、固体基板上に形成されたラングミューア・
ブロジェット膜を種結晶として、溶液中で結晶成長させ
ることにより、ＬＢ（ラングミューア・ブロジェット）
タイプの層構造を有する結晶が得られる。この方法を用
いることにより、従来、ＬＢ法で得ることが困難であっ
た短鎖のアルキル部を有する有機化合物の単結晶製造が
可能となる。This invention is based on a Langmuir film formed on a solid substrate.
LB (Langmuir-Blodgett) is grown by growing crystals in a solution using Blodgett's film as a seed crystal.
A crystal with a layered structure of type is obtained. By using this method, it becomes possible to produce a single crystal of an organic compound having a short-chain alkyl moiety, which has conventionally been difficult to obtain by the LB method.
有機単結晶薄膜を製造する方法としては、従来水面上に
、有機化合物を滴下展開して膜形成後、基板を、水面を
横切る形で上下させ、付着形成するＬＢ（ラングミュー
ア・ブロジェット）法が広く用いられている。Conventional methods for manufacturing organic single-crystal thin films include the LB (Langmuir-Blodgett) method, in which an organic compound is dropped onto a water surface to form a film, and then a substrate is moved up and down across the water surface to form an adherent film. is widely used.
しかし、上記のＬＢ法は、用いる材料に制限があり、ア
ルキル鎖の短い有機化合物は適用できなかった。However, the above LB method has limitations on the materials used, and cannot be applied to organic compounds with short alkyl chains.
上記問題点を解決するために、この発明は、固体基板上
に形成されたラングミューア・ブロジェット膜を種結晶
として、溶液中で結晶成長させることにした。In order to solve the above problems, the present invention uses a Langmuir-Blodgett film formed on a solid substrate as a seed crystal to grow crystals in a solution.
ラングミューア・ブロジェット膜を種結晶として、溶液
中で結晶成長させることにより、従来、ＬＢ法で困難で
あった短鎖アルキル物質のＬＢ膜タイプ単結晶薄膜形成
が可能となる。By growing a crystal in a solution using a Langmuir-Blodgett film as a seed crystal, it becomes possible to form an LB film type single crystal thin film of a short-chain alkyl substance, which has been difficult to achieve using the LB method.
以下に、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
実施例１
第３図（ａｌ〜（Ｃ１は、浸漬引き上げ法によるラング
ミューア・ブロジェット膜の作成法を示したものである
。Example 1 FIG. 3 (al~(C1) shows a method for creating a Langmuir-Blodgett film by the immersion pulling method.
アラキシン酸２をベンゼンに溶解後、水面上３に滴下展
開した。充分ベンゼンが蒸発した後、バリアーで圧縮し
、単分子膜を形成した。ガラス基板１を浸漬引上げ、単
分子膜を基板上に付着形成した。Araxic acid 2 was dissolved in benzene, and then added dropwise to 3 on the water surface. After sufficient benzene evaporated, it was compressed with a barrier to form a monomolecular film. A glass substrate 1 was immersed and pulled up, and a monomolecular film was deposited on the substrate.
第１図は、基板上に形成したＬＢ膜を種結晶として、有
機単結晶薄膜を育成する方法（１１を示したものである
０図中２ａは親水基、２ｂは疎水基を示す、恒温槽４の
中に、アラキシン酸のエタノール溶液８を入れ、ＬＢ膜
種結晶９を溶液の中央部に上方からつるした。乾燥した
Ｎｔガスを、注入口６から注入し、排気ロアから排気し
た。溶液の温度を一定に制御し、１０時間以上放置した
。エタノールの蒸発により、溶液が過飽和状態になり、
ＬＢ膜膜上上析出した。ＦＴＩＲ測定により、ＬＢ膜タ
イプの薄膜が生長していることを確認した。Figure 1 shows a method (11) for growing an organic single crystal thin film using an LB film formed on a substrate as a seed crystal. An ethanol solution 8 of alaxic acid was placed in the solution 4, and the LB membrane seed crystal 9 was suspended from above in the center of the solution.Dry Nt gas was injected from the injection port 6 and exhausted from the exhaust lower. The temperature was controlled constant and left for over 10 hours.The solution became supersaturated due to evaporation of ethanol.
It was deposited on the LB film. It was confirmed by FTIR measurement that an LB film type thin film was growing.
実施例２
第４図（ａｌ〜ｆｄｌは、水平付着法によるラングミュ
ーア・ブロジェット膜の作成法を示したものである。Example 2 FIG. 4 (al to fdl show a method for forming a Langmuir-Blodgett film by a horizontal deposition method.
アラキシン酸２をベンゼンに溶解後、水面上３に滴下展
開後、バリアーで圧縮し単分子膜を作成後、基板１を上
方から水平に降ろし、単分子膜を付着形成した。After dissolving araxic acid 2 in benzene, it was dropped onto the water surface 3 and expanded, compressed with a barrier to form a monomolecular film, and then the substrate 1 was lowered horizontally from above to form a monomolecular film.
第２図は、ＬＢ膜を種結晶として、有機単結晶薄膜を育
成する方法（２）を示したものである。FIG. 2 shows method (2) of growing an organic single crystal thin film using an LB film as a seed crystal.
恒温槽４の中に、カプリン酸
ＣＨｓ（ＣＨよ）。Ｃ０ＯＨ
のエタノール溶液８を入れ、溶液中央部に、ＬＢ膜種結
晶９を入れた。循環水により温度制御し、１時間に１℃
の速さで冷却し、２０℃から５℃まで温度を下げた。Ｆ
ＴＩＲ測定により、ＬＢ膜タイプの薄膜が生長している
ことを確認した。In thermostat 4, capric acid CHs (CH). A C0OH 2 ethanol solution 8 was added, and an LB film seed crystal 9 was placed in the center of the solution. Temperature controlled by circulating water, 1°C per hour
The temperature was lowered from 20°C to 5°C. F
It was confirmed by TIR measurement that an LB film type thin film was growing.
この発明は、以上説明したように、固体基板上に形成さ
れたラングミューア・ブロジェット膜を種結晶として、
溶液中で結晶成長させることにより、ＬＢ（ラングミュ
ーア・ブロジェット）膜タイプの層構造を存する結晶が
得られた。この方法を用いることにより、従来、ＬＢ法
で得ることが困難であった短鎖のアルキル部を有する有
機化合物の単結晶製造が可能となる。As explained above, this invention uses a Langmuir-Blodgett film formed on a solid substrate as a seed crystal.
By growing the crystal in a solution, a crystal having a layered structure of the LB (Langmuir-Blodgett) film type was obtained. By using this method, it becomes possible to produce a single crystal of an organic compound having a short-chain alkyl moiety, which has conventionally been difficult to obtain by the LB method.
第１図は、結晶育成方法（ｌｌの説明図、第２図は、結
晶育成方法（２）の説明図、第３図ｆａｔ〜（Ｃ１は、
浸漬引上げ法による種結晶形成図、第４図（ａｌ〜（ｄ
ｌは、水平付着法による種結晶形成図である。
１・・・基板
２・・・ＬＢ膜
３・・・水
４・・・恒温槽
５・・・温度計
６・・・Ｎ□ガス注注入
子・・・Ｎ２ガス排気口
８・・・溶液
９・・・ＬＢｌｊＪ種結晶
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 最 上 務（他１名）９ＬＢｐＨや
！８晶
結晶１賊万、六（＋）／”Ｔ説口１０
沿１０
ｑＬＢ腺欅桔山
紹晶盲す〜、方：ｆ：（２Ｍ’ｌ硯ｇＥＩ口第２図Figure 1 is an explanatory diagram of the crystal growth method (ll), Figure 2 is an explanatory diagram of the crystal growth method (2), and Figure 3 is an explanatory diagram of the crystal growth method (C1).
Seed crystal formation diagram by immersion pulling method, Figure 4 (al~(d)
1 is a diagram of seed crystal formation by the horizontal deposition method. 1...Substrate 2...LB film 3...Water 4...Thermostatic chamber 5...Thermometer 6...N□ gas injector...N2 gas exhaust port 8...Solution 9...LBljJ Seed Crystal and above Applicant: Seiko Electronic Industries Co., Ltd. Agent Patent Attorney Tsutomu Mogami (and 1 other person) 9LBpH! 8 crystal crystal 1 bandit million, 6 (+)/” T-sensei mouth 10 side 10 qLB gland Keyaki Kiyama Shao crystal blindness~, direction: f: (2M'l inkstone gEI mouth 2nd figure
Claims (4)
ェット膜を種結晶として有機単結晶を製造することを特
徴とする有機単結晶の製造方法。(1) A method for producing an organic single crystal, comprising producing an organic single crystal using a Langmuir-Blodgett film formed on a solid substrate as a seed crystal.
載の有機単結晶の製造方法。(2) The method for producing an organic single crystal according to claim 1, wherein the solid substrate is glass.
１項記載の有機単結晶の製造方法。(3) The method for producing an organic single crystal according to claim 1, wherein the solid substrate is plastic.
載の有機単結晶の製造方法。（ただし、式中のｎは、 ｎ＝１〜３０ であり、Ｘは、 ＣＯＯＨ、ＯＨ、ＯＣＨ＿３、ＯＣ＿２Ｈ＿５、ＣＯＯ
ＣＨ＿３、ＣＯＯＣ＿２Ｈ＿５、ＣＯＣＨ＿３、ＣＯＣ
＿２Ｈ＿５、ＣＮ、ＳＨ、ＳＯ＿３Ｈ、ＯＳＯ＿３Ｈ、
ＮＯ＿２、ＯＮＯ＿２、ＮＨ＿２、ＣＯＮＨ＿２、ＮＨ
ＣＯＮＨ＿２、ＮＨＣＯＣＨ＿３、ＮＨＣＯＣ＿２Ｈ＿
５、のうちから選ばれた一種類の基である。）(4) The method for producing an organic single crystal according to claim 1, wherein the organic single crystal molecule is an organic compound represented by CH_3(CH_2)_n-X. (However, n in the formula is n=1 to 30, and X is COOH, OH, OCH_3, OC_2H_5, COO
CH_3, COOC_2H_5, COCH_3, COC
_2H_5, CN, SH, SO_3H, OSO_3H,
NO_2, ONO_2, NH_2, CONH_2, NH
CONH_2, NHCOCH_3, NHCOC_2H_
It is one type of group selected from 5. )
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62033700A JPS63201098A (en) | 1987-02-17 | 1987-02-17 | Production of organic single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62033700A JPS63201098A (en) | 1987-02-17 | 1987-02-17 | Production of organic single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63201098A true JPS63201098A (en) | 1988-08-19 |
Family
ID=12393692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62033700A Pending JPS63201098A (en) | 1987-02-17 | 1987-02-17 | Production of organic single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63201098A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406903B2 (en) * | 1995-09-25 | 2002-06-18 | University Of Alabama At Birmingham | Dynamically controlled crystal growth system |
-
1987
- 1987-02-17 JP JP62033700A patent/JPS63201098A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406903B2 (en) * | 1995-09-25 | 2002-06-18 | University Of Alabama At Birmingham | Dynamically controlled crystal growth system |
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