JPS63193452A - Secondary ion mass spectrograph - Google Patents
Secondary ion mass spectrographInfo
- Publication number
- JPS63193452A JPS63193452A JP62025832A JP2583287A JPS63193452A JP S63193452 A JPS63193452 A JP S63193452A JP 62025832 A JP62025832 A JP 62025832A JP 2583287 A JP2583287 A JP 2583287A JP S63193452 A JPS63193452 A JP S63193452A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- counting
- secondary ion
- mesh
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical group 0.000 claims abstract description 64
- 238000001514 detection method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 6
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract description 3
- KLEAIHJJLUAXIQ-JDRGBKBRSA-N irinotecan hydrochloride hydrate Chemical compound O.O.O.Cl.C1=C2C(CC)=C3CN(C(C4=C([C@@](C(=O)OC4)(O)CC)C=4)=O)C=4C3=NC2=CC=C1OC(=O)N(CC1)CCC1N1CCCCC1 KLEAIHJJLUAXIQ-JDRGBKBRSA-N 0.000 abstract 1
- 238000004458 analytical method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体中の不純物分析など→こ用いる二次イオ
ン質量分析計に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a secondary ion mass spectrometer used for analysis of impurities in semiconductors, etc.
二次イオン質量分析計はその高感度性故に極微量不純物
分析に広く使用されている。その定量分析法は二次イオ
ン発生機構が充分に把握されていない関係上、イオン打
ち込み試料等の標準試料を基にして定量分析が行われて
いる。この分析では母体から発生する二次イオンを基準
として微量不純物の二次イオンカウント数を規格化し、
標準試料との比較を行っている。Secondary ion mass spectrometers are widely used for trace impurity analysis due to their high sensitivity. Since the secondary ion generation mechanism is not fully understood, quantitative analysis is performed based on standard samples such as ion-implanted samples. In this analysis, the secondary ion counts of trace impurities are normalized based on the secondary ions generated from the parent body.
Comparisons are made with standard samples.
ここで問題となる点は母体イオンの何を規格化の基準と
するかである。通常、検知器に電子増倍管を用いるため
、多量に発生する母体イオンのままではカウント数が多
過ぎ、いわゆるデッドタイムの問題が生じ多数カウント
では比例性が失われる。そのため、酸素イオンスパッタ
の場合は敢えて発生効率の悪い陰性元素イオンを用いる
か、二価イオンあるいは二分子イオン等が基準にとられ
ている。しかしながらこのような発生効率の悪いイオン
は一次イオンの電流値、入射角度、試料表面の化学状態
に非常に敏感であり、測定毎の再現性を低下させる要因
となる。The issue here is which of the parent ions should be used as the standard for normalization. Usually, since an electron multiplier tube is used as a detector, the number of counts is too large if a large amount of parent ions are generated, resulting in a problem of so-called dead time, and proportionality is lost in large numbers of counts. Therefore, in the case of oxygen ion sputtering, negative element ions with poor generation efficiency are intentionally used, or divalent ions or bimolecular ions are used as a standard. However, such inefficiently generated ions are very sensitive to the current value of the primary ions, the incident angle, and the chemical state of the sample surface, which causes a decrease in the reproducibility of each measurement.
本発明の目的は測定試料の母体イオンから最も安定に発
生する二次イオンを規格化の基準に使えるように検知器
系に改善を施し、電子増倍管特有の高感度性を維持しつ
つ多数イオンのカウント数も同時に測定する二次イオン
質量分析計、即ち従来の装置のダイナミックレンジが〜
７桁程度のものを〜１０桁程程度機能を向上しうる二次
イオン質量分析計を提供することにある。The purpose of the present invention is to improve the detector system so that the most stably generated secondary ions from the parent ions of the measurement sample can be used as standards for standardization, and to improve the detection system so that the secondary ions generated most stably from the parent ions of the measurement sample can be used as standardization standards. A secondary ion mass spectrometer that simultaneously measures ion counts, that is, the dynamic range of conventional equipment
The object of the present invention is to provide a secondary ion mass spectrometer whose functionality can be improved by about 7 to 10 orders of magnitude.
本発明は二次イオンの経路に対する電子増倍管の前段に
設けた荒いメツシュを有するイオン強度減衰器と、該イ
オン強度減衰器のメツシュに検出イオンの荷電と同符号
の電位を印加して電子増倍管に到達するイオン数を制御
する微小電圧発生器と、該微小電圧発生器によるメツシ
ュ印加電圧を制御し、電子増倍管が飽和出力を超えたと
きに印加電位とイオン電流減衰度との相関関係に基づい
て到達イオン数の検知信号を出力させる手段とを有する
ことを特徴とする二次イオン質量分析計である。The present invention provides an ion intensity attenuator having a rough mesh provided in the front stage of an electron multiplier for the path of secondary ions, and a potential having the same sign as the charge of the detected ions is applied to the mesh of the ion intensity attenuator to generate electrons. A microvoltage generator that controls the number of ions reaching the multiplier, and a mesh voltage applied by the microvoltage generator to control the applied potential and ion current attenuation when the electron multiplier exceeds the saturation output. A secondary ion mass spectrometer is characterized in that it has means for outputting a detection signal of the number of arriving ions based on the correlation between the two.
本発明の主要な構成は次の二つの要件からなる。 The main configuration of the present invention consists of the following two requirements.
すなわち、第一はメツシュの電位印加によるイオン強度
減衰器であり、第二は印加電位とイオン電流減衰度のデ
ータから電子増倍管が飽和出力を示す前の段階で入射イ
オン強度を増加しても出力が一定値を示すようにメツシ
ュへの印加電位を増加させ、印加電位の変位量からイオ
ンカウント数を逆算することである。従って、電子増倍
管が飽和値に達する前の段階ではメツシュは零電位とし
出力をそのまま陰極線管（ＣＲＴ）上に表示させ、それ
以後の段階では電位を増加させて一定出力を示すように
し、計数回路上の設定から電位増加分を出力に逆算しあ
たかも両段階での出力が連続的にＣＲＴ上に比例性をも
って増加して表示される。That is, the first is an ion intensity attenuator by applying a mesh potential, and the second is an ion intensity attenuator that increases the incident ion intensity at a stage before the electron multiplier shows a saturated output based on the data of the applied potential and ion current attenuation degree. Also, the potential applied to the mesh is increased so that the output shows a constant value, and the ion count number is calculated backward from the amount of displacement of the applied potential. Therefore, at the stage before the electron multiplier tube reaches the saturation value, the mesh is set to zero potential and the output is displayed as is on the cathode ray tube (CRT), and at the stage after that, the potential is increased to show a constant output. The increase in potential is calculated back to the output from the settings on the counting circuit, and the outputs at both stages are displayed as if they were continuously increasing proportionally on the CRT.
メツシュの大きさは零電位の時は殆ど減衰されることの
ないような数１００−のピッチに作製されており、微量
不純物を測定する際の障害にはならない。The size of the mesh is made at a pitch of several 100's so that there is almost no attenuation when the potential is zero, so it does not become an obstacle when measuring trace impurities.
次に本発明の実施例について図面に基づいて説明する。 Next, embodiments of the present invention will be described based on the drawings.
第１図は本装置を付加した二次イオン質量分析計の構成
図である。試料２に対する一次イオン源１、エネルギー
収束電界板３、質量分析マグネット４を含む一次イオン
発生機構、二次イオン分析機構は従来のものとまったく
変わりない。FIG. 1 is a configuration diagram of a secondary ion mass spectrometer to which this device is added. The primary ion generation mechanism and secondary ion analysis mechanism for the sample 2, including the primary ion source 1, the energy convergence electric field plate 3, and the mass spectrometry magnet 4, are completely unchanged from the conventional ones.
質量分析マグネット４を出た二次イオンの経路５に対し
、二次イオン減衰装置６は電子増倍管７の前段に置かれ
、微小電圧発生器８と精密電圧計９と図のように結線さ
れる。精密電圧計９の出力は計数回路１０に導入され、
後述する校正曲線を利用してイオンカウント数の変動に
換算され、これがＣＲＴ １１に表示される。For the path 5 of secondary ions exiting the mass spectrometry magnet 4, a secondary ion attenuator 6 is placed before the electron multiplier 7, and is connected to a microvoltage generator 8 and a precision voltmeter 9 as shown in the figure. be done. The output of the precision voltmeter 9 is introduced into a counting circuit 10,
This is converted into a change in the number of ion counts using a calibration curve to be described later, and this is displayed on the CRT 11.
通常の電子増倍管は〜１０’カウント１秒以上で飽和出
力に近くなるので、本実施例では多数イオンカウント計
数領域を１×１０ｓ力ウント／秒と定めた。Since an ordinary electron multiplier reaches near saturation output after ~10' counts for 1 second or more, in this embodiment, the large number ion count counting region is set to 1 x 10 s/sec.
これ以上のイオン数が来たときは二次イオン減衰装置６
が働き、カウント数をｌＸｌ０’力ウント１秒に保つよ
うにメツシュ電位が供給される。If the number of ions exceeds this number, the secondary ion attenuation device 6
is activated, and a mesh potential is supplied to keep the count at lXl0' and 1 second.
第２図は横軸にメツシュ電位の値をとり縦軸に検知器へ
の到達イオン数の減衰率を測定した結果を示す、このデ
ータを基にして前記のように計数カウントをｌＸｌ０’
力ウント／秒に保つように供給されたメツシュ電位から
実際のカウント数が逆算される１本発明装置では逆算さ
れたカウント数が連続的に同−ＣＲＴ １１の画面上に
表示される。Figure 2 shows the value of the mesh potential on the horizontal axis and the attenuation rate of the number of ions reaching the detector on the vertical axis.Based on this data, the counts are calculated as described above.
In the apparatus of the present invention, the actual count number is calculated backward from the mesh potential supplied so as to maintain the power count/second, and the calculated count number is continuously displayed on the screen of the CRT 11.
以上詳述したように本発明によれば、従来困難とされた
広いダイナミックレンジを持つ二次イオン質量計を実現
し、微量不純物とバルク元素の深さ方向プロファイルを
同一画面上に表示できる効果を有する。As detailed above, according to the present invention, a secondary ion mass meter with a wide dynamic range, which was previously considered difficult, has been realized, and the depth profile of trace impurities and bulk elements can be displayed on the same screen. have
【図面の簡単な説明】
第１図は本発明の実施例によって作成された二次イオン
質量計の構成図、第２図は実施例に用いられたメツシュ
電位と到達イオンの減衰率の関係についての測定例を示
す図である。
１・・・−次イオン源 ２・・・試料３・・・
エネルギー収束電界板 ４・・・質量分析マグネット５
・・・二次イオン経路 ６・・・二次イオン減衰
用メッシュ７・・・電子増倍管 ８・・・微
小電圧発生器９・・・精密電圧計 １０・・
・計数回路１１・・・ＣＲＴ[Brief Description of the Drawings] Fig. 1 is a configuration diagram of a secondary ion mass meter created according to an embodiment of the present invention, and Fig. 2 shows the relationship between the mesh potential and the attenuation rate of arriving ions used in the embodiment. FIG. 3 is a diagram showing an example of measurement. 1... -order ion source 2... sample 3...
Energy convergence electric field plate 4...Mass analysis magnet 5
... Secondary ion path 6 ... Secondary ion attenuation mesh 7 ... Electron multiplier tube 8 ... Micro voltage generator 9 ... Precision voltmeter 10 ...
・Counting circuit 11...CRT
Claims (1)
けた荒いメッシュを有するイオン強度減衰器と、該イオ
ン強度減衰器のメッシュに検出イオンの荷電と同符号の
電位を印加して電子増倍管に到達するイオン数を制御す
る微小電圧発生器と、該微小電圧発生器によるメッシュ
印加電圧を制御し、電子増倍管が飽和出力を超えたとき
に印加電位とイオン電流減衰度との相関関係に基づいて
到達イオン数の検知信号を出力させる手段とを有するこ
とを特徴とする二次イオン質量分析計。(1) An ion intensity attenuator with a rough mesh is provided in front of the electron multiplier for the path of secondary ions, and a potential with the same sign as the charge of the detected ions is applied to the mesh of the ion intensity attenuator to generate electrons. A microvoltage generator that controls the number of ions reaching the multiplier, and a mesh applied voltage by the microvoltage generator that controls the applied potential and ion current attenuation when the electron multiplier exceeds the saturation output. A secondary ion mass spectrometer comprising: means for outputting a detection signal of the number of arriving ions based on the correlation between the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62025832A JPS63193452A (en) | 1987-02-05 | 1987-02-05 | Secondary ion mass spectrograph |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62025832A JPS63193452A (en) | 1987-02-05 | 1987-02-05 | Secondary ion mass spectrograph |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63193452A true JPS63193452A (en) | 1988-08-10 |
| JPH0587935B2 JPH0587935B2 (en) | 1993-12-20 |
Family
ID=12176832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62025832A Granted JPS63193452A (en) | 1987-02-05 | 1987-02-05 | Secondary ion mass spectrograph |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63193452A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509812A (en) * | 1999-09-03 | 2003-03-11 | サーモ マスラボ リミテッド | High dynamic range mass spectrometer |
-
1987
- 1987-02-05 JP JP62025832A patent/JPS63193452A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509812A (en) * | 1999-09-03 | 2003-03-11 | サーモ マスラボ リミテッド | High dynamic range mass spectrometer |
| JP4869526B2 (en) * | 1999-09-03 | 2012-02-08 | サーモ フィニガン リミテッド ライアビリティ カンパニー | High dynamic range mass spectrometer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587935B2 (en) | 1993-12-20 |
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