JPS63188964U - - Google Patents

Info

Publication number
JPS63188964U
JPS63188964U JP7989287U JP7989287U JPS63188964U JP S63188964 U JPS63188964 U JP S63188964U JP 7989287 U JP7989287 U JP 7989287U JP 7989287 U JP7989287 U JP 7989287U JP S63188964 U JPS63188964 U JP S63188964U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
electrode side
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7989287U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7989287U priority Critical patent/JPS63188964U/ja
Publication of JPS63188964U publication Critical patent/JPS63188964U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の第１の実施例を示す縦断面図
、第２図は同じく本考案の第２の実施例を示す縦
断面図、第３図ａ乃至ｃは本考案によるシヨツト
キ障壁ゲート型電界効果トランジスタの製造方法
を工程順に示す断面図、第４図は従来のシヨツト
キ障壁ゲート型電界効果トランジスタを示す断面
図である。 １１；半絶縁性ＧａＡｓ基板、１２；ｎ型Ｇａ
Ａｓ層、１３；ソース電極、１４；ドレイン電極
、１５；ゲート電極、１６；ゲート電極頭部、２
１；低抵抗領域。 FIG. 1 is a vertical cross-sectional view showing a first embodiment of the present invention, FIG. 2 is a vertical cross-sectional view showing a second embodiment of the present invention, and FIGS. 3 a to 3 c are shot barrier gates according to the present invention. FIG. 4 is a sectional view showing a conventional shot barrier gate type field effect transistor. 11; semi-insulating GaAs substrate, 12; n-type Ga
As layer, 13; source electrode, 14; drain electrode, 15; gate electrode, 16; gate electrode head, 2
1; Low resistance region.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体能動層上に、ソース、ドレイン及びゲー
トの各電極を設けたシヨツトキ障壁ゲート型電界
効果トランジスタにおいて、前記ゲート電極の頭
部は、ソース電極側がドレイン電極側よりも長く
なるように張り出して形成されていることを特徴
とするシヨツトキ障壁ゲート型電界効果トランジ
スタ。 In a shot barrier gate field effect transistor in which source, drain, and gate electrodes are provided on a semiconductor active layer, the head of the gate electrode is formed to protrude so that the source electrode side is longer than the drain electrode side. A short-barrier gate field effect transistor characterized by:
JP7989287U 1987-05-28 1987-05-28 Pending JPS63188964U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7989287U JPS63188964U (en) 1987-05-28 1987-05-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7989287U JPS63188964U (en) 1987-05-28 1987-05-28

Publications (1)

Publication Number Publication Date
JPS63188964U true JPS63188964U (en) 1988-12-05

Family

ID=30930193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7989287U Pending JPS63188964U (en) 1987-05-28 1987-05-28

Country Status (1)

Country Link
JP (1) JPS63188964U (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366136A (en) * 1989-08-04 1991-03-20 Fujitsu Ltd Semiconductor device
US7906855B1 (en) 2008-01-21 2011-03-15 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
JP2012147033A (en) * 2006-11-21 2012-08-02 Cree Inc Transistor device
US8691632B1 (en) 2002-11-08 2014-04-08 Amkor Technology, Inc. Wafer level package and fabrication method
US8853836B1 (en) 1998-06-24 2014-10-07 Amkor Technology, Inc. Integrated circuit package and method of making the same
US8900995B1 (en) 2010-10-05 2014-12-02 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US8981572B1 (en) 2011-11-29 2015-03-17 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9159672B1 (en) 2010-08-02 2015-10-13 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US9184148B2 (en) 2013-10-24 2015-11-10 Amkor Technology, Inc. Semiconductor package and method therefor
US9184118B2 (en) 2013-05-02 2015-11-10 Amkor Technology Inc. Micro lead frame structure having reinforcing portions and method
US9275939B1 (en) 2011-01-27 2016-03-01 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands and method
US9324614B1 (en) 2010-04-06 2016-04-26 Amkor Technology, Inc. Through via nub reveal method and structure
US9362210B2 (en) 2000-04-27 2016-06-07 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133761A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS61156887A (en) * 1984-12-28 1986-07-16 Fujitsu Ltd Manufacture of fet
JPS61194781A (en) * 1985-02-23 1986-08-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS61240684A (en) * 1985-04-18 1986-10-25 Nec Corp Schottky-type field effect transistor and manufacture thereof
JPS6399578A (en) * 1986-10-16 1988-04-30 Nec Corp Field effect transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133761A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS61156887A (en) * 1984-12-28 1986-07-16 Fujitsu Ltd Manufacture of fet
JPS61194781A (en) * 1985-02-23 1986-08-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS61240684A (en) * 1985-04-18 1986-10-25 Nec Corp Schottky-type field effect transistor and manufacture thereof
JPS6399578A (en) * 1986-10-16 1988-04-30 Nec Corp Field effect transistor

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366136A (en) * 1989-08-04 1991-03-20 Fujitsu Ltd Semiconductor device
US8853836B1 (en) 1998-06-24 2014-10-07 Amkor Technology, Inc. Integrated circuit package and method of making the same
US8963301B1 (en) 1998-06-24 2015-02-24 Amkor Technology, Inc. Integrated circuit package and method of making the same
US9224676B1 (en) 1998-06-24 2015-12-29 Amkor Technology, Inc. Integrated circuit package and method of making the same
US9362210B2 (en) 2000-04-27 2016-06-07 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
US8952522B1 (en) 2002-11-08 2015-02-10 Amkor Technology, Inc. Wafer level package and fabrication method
US8691632B1 (en) 2002-11-08 2014-04-08 Amkor Technology, Inc. Wafer level package and fabrication method
US9406645B1 (en) 2002-11-08 2016-08-02 Amkor Technology, Inc. Wafer level package and fabrication method
US9450081B2 (en) 2006-11-21 2016-09-20 Cree, Inc. High voltage GaN transistor
JP2012178593A (en) * 2006-11-21 2012-09-13 Cree Inc Transistor device
JP2012147033A (en) * 2006-11-21 2012-08-02 Cree Inc Transistor device
US7906855B1 (en) 2008-01-21 2011-03-15 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9324614B1 (en) 2010-04-06 2016-04-26 Amkor Technology, Inc. Through via nub reveal method and structure
US9159672B1 (en) 2010-08-02 2015-10-13 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8900995B1 (en) 2010-10-05 2014-12-02 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US9275939B1 (en) 2011-01-27 2016-03-01 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands and method
US9508631B1 (en) 2011-01-27 2016-11-29 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands and method
US8981572B1 (en) 2011-11-29 2015-03-17 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9431323B1 (en) 2011-11-29 2016-08-30 Amkor Technology, Inc. Conductive pad on protruding through electrode
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9184118B2 (en) 2013-05-02 2015-11-10 Amkor Technology Inc. Micro lead frame structure having reinforcing portions and method
US9184148B2 (en) 2013-10-24 2015-11-10 Amkor Technology, Inc. Semiconductor package and method therefor
US9543235B2 (en) 2013-10-24 2017-01-10 Amkor Technology, Inc. Semiconductor package and method therefor

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