JPS63188940A - System for heating by light - Google Patents
System for heating by lightInfo
- Publication number
- JPS63188940A JPS63188940A JP62021383A JP2138387A JPS63188940A JP S63188940 A JPS63188940 A JP S63188940A JP 62021383 A JP62021383 A JP 62021383A JP 2138387 A JP2138387 A JP 2138387A JP S63188940 A JPS63188940 A JP S63188940A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor substrate
- substrate
- control
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000009529 body temperature measurement Methods 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、半導体製造工程に用いられるランプアニール
装置等の光加熱装置に関する。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to an optical heating device such as a lamp annealing device used in a semiconductor manufacturing process.
Ｂ、従来の技術
この種の光加熱装置として、上述のランプアニール装置
の他、スパッタリング装置、エピタキシャル装置、アッ
シング装置の補助加熱装置が知られており、いずれの装
置においても、加熱温度の制御とともに、基板内の反応
を一様にするため基板内の加熱温度分布を均一化する必
要がある。B. Prior Art As this type of optical heating device, in addition to the above-mentioned lamp annealing device, auxiliary heating devices for sputtering devices, epitaxial devices, and ashing devices are known. In order to uniformize the reaction within the substrate, it is necessary to equalize the heating temperature distribution within the substrate.
特にランプアニール装置では、基板周辺部での熱の逃げ
に起因して温度分布が不均一となり、その結果、スリッ
プラインが発生したり、また不純物の活性化が不均一と
なって基板内の半導体の特性が相違するといった問題が
ある。Particularly in lamp annealing equipment, heat escapes around the substrate, resulting in uneven temperature distribution, which can result in slip lines, and uneven activation of impurities, which can cause the semiconductor inside the substrate to become uneven. There is a problem that the characteristics of the two are different.
そこで、特開昭５８−１９４３３２号公報や特開昭６０
−２４７９３４号公報（以下で第１の公報と呼ぶ）に開
示されている如く、基板周辺部に補助加熱機構を設けた
り、基板周辺部のランプ配置密度を中央部よりも高くし
て、基板周辺部の温度の不均一さを是正するようにした
装置が提案されている。また、後者の公報には、予め測
定した基板中央部と周辺部の温度差に基づき補助加熱機
構へ電力を供給する手法が開示されている。Therefore, JP-A-58-194332 and JP-A-60
As disclosed in Publication No. 247934 (hereinafter referred to as the first publication), an auxiliary heating mechanism is provided at the periphery of the substrate, and the lamp arrangement density at the periphery of the substrate is higher than that at the center. A device has been proposed to correct the non-uniformity of temperature in the area. Further, the latter publication discloses a method of supplying power to an auxiliary heating mechanism based on a pre-measured temperature difference between the center portion and the peripheral portion of the substrate.
また、特開昭６１−１９８７３５号公報（以下で第２の
公報と呼ぶ）には、複数のフラッシュランプをウェハに
相対的に同心円上に配置し、ウェハの中心、周縁部およ
び中心と周縁部との間に複数の温度センサを配置し、こ
れら温度センサからの信号により各フラッシュランプへ
供給される電力を個別的に制御するアニール装置が開示
されている。Furthermore, in Japanese Patent Application Laid-Open No. 198735 (hereinafter referred to as the second publication), a plurality of flash lamps are arranged concentrically relative to the wafer, and An annealing apparatus is disclosed in which a plurality of temperature sensors are arranged between the flash lamps and the flash lamps, and the power supplied to each flash lamp is individually controlled based on signals from the temperature sensors.
Ｃ０発明が解決しようとする問題点
筒１の公報の装置では、予め測定した基板中央部と周辺
部の温度差に基づいて補助加熱機構への電力を制御する
ため、実際の温度分布に対して必ずしも適切に加熱制御
が行われていないおそれがある。Problems to be Solved by the C0 Invention In the device disclosed in the publication No. 1, the power to the auxiliary heating mechanism is controlled based on the pre-measured temperature difference between the center and periphery of the substrate, so There is a possibility that heating control is not necessarily performed appropriately.
また第２の公報の装置では、複数のセンサが必要となる
上、測温箇所が固定されていて大きさのことなる基板毎
にセンサの位置を変更しなくてはならず、作業効率が悪
い。しかも、基板上の測温箇所が温度センサの位置２個
数によって制限され、任意の基板に対してランプのパワ
ーを制御するには情報量が不足するおそれがある。Furthermore, the device disclosed in the second publication requires multiple sensors, and since the temperature measurement location is fixed, the sensor position must be changed for each board of different size, resulting in poor work efficiency. . Moreover, the number of temperature measurement locations on the board is limited by the number of two temperature sensors, and there is a risk that the amount of information may be insufficient to control the lamp power for any board.
本発明の目的は、走査型放射温度計により基板における
任意の複数点の温度を測定しその結果に基づいて基板の
加熱温度を制御することにより上述した問題点を解決し
た光加熱装置を提供することにある６
Ｄ０問題点を解決するための手段
第１図のクレーム対応図に示すとおり１本発明に係る光
加熱装置は、半導体基板１０１に光を照射して加熱する
加熱手段１０２と、半導体基板１０１上を光学的に走査
して当該基板上の少なくとも２点以上の温度を測定する
測温手段１０３と。An object of the present invention is to provide an optical heating device that solves the above-mentioned problems by measuring the temperature at arbitrary points on a substrate using a scanning radiation thermometer and controlling the heating temperature of the substrate based on the results. Means for Solving the 6 D0 Problems As shown in the claim correspondence diagram in FIG. and a temperature measuring means 103 that optically scans the substrate 101 and measures the temperature at at least two points on the substrate.
この測温手段１０３での測定結果に基づき加熱手段１０
２を実時間で制御する温度制御手段１０４とを具備する
。Based on the measurement result of the temperature measuring means 103, the heating means 10
2 in real time.
Ｅ０作用
加熱手段１０２により半導体基板１０１を加熱する。測
温手段１０３を半導体基板上で光学的に走査して基板上
の少なくとも２点の温度を測定する。この測温結果に基
づき、温度制御手段１０４は実時間で加熱手段１０２を
制御して半導体基板１０１を所望の温度でかつ半導体基
板１０１の全領域の温度分布が常時均一になるように加
熱する。The semiconductor substrate 101 is heated by the E0 effect heating means 102. The temperature measurement means 103 optically scans the semiconductor substrate to measure the temperature at at least two points on the substrate. Based on this temperature measurement result, the temperature control means 104 controls the heating means 102 in real time to heat the semiconductor substrate 101 to a desired temperature so that the temperature distribution over the entire area of the semiconductor substrate 101 is always uniform.
Ｆ、実施例
第２図〜第５図に基づいて、本発明をランプアニール装
置に適用した場合の一実施例について説明する。F. Embodiment An embodiment in which the present invention is applied to a lamp annealing apparatus will be described based on FIGS. 2 to 5.
第２図において、加熱用照射光を透過する石英等で作ら
れたチャンバ１内の基台２上に半導体基板３が載置され
る。この半導体基板３は基板取り出し口１ｃから出し入
れされる。チャンバ１の上壁ｌａ、下壁１ｂに近接して
、第３図に示すように、半径が異なり半導体基板３の中
心に対して同心円状に配置されたそれぞれ３本の加熱用
赤外ランプ４ａ〜４ｃ、５ａ〜５ｃが設置され、半導体
基板３を加熱する。上壁１ａ、下壁１ｂの中心には、そ
れぞれ対向してガス吸気口６とガス排気ロアおよび測温
用通路８とが設けられている。測温用通路８には、測温
用光学系を構成する対物レンズ９、リレーレンズ１０が
設けられ、リレーレンズ１０には走査ミラー１１．集光
レンズ１２およびディテクタ１３が後続配置され、これ
らにより測温用光学系５１が構成される。走査ミラー１
１は、図示しない駆動機構により図示の方向に２次元的
にその傾角が変化するよう構成されている。In FIG. 2, a semiconductor substrate 3 is placed on a base 2 in a chamber 1 made of quartz or the like that transmits heating irradiation light. This semiconductor substrate 3 is taken in and out from the substrate take-out port 1c. As shown in FIG. 3, three heating infrared lamps 4a are arranged in proximity to the upper wall la and lower wall 1b of the chamber 1, respectively, and are arranged concentrically with respect to the center of the semiconductor substrate 3 with different radii. 4c and 5a to 5c are installed to heat the semiconductor substrate 3. At the centers of the upper wall 1a and the lower wall 1b, a gas inlet 6, a gas exhaust lower, and a temperature measurement passage 8 are provided to face each other. The temperature measurement passage 8 is provided with an objective lens 9 and a relay lens 10 that constitute a temperature measurement optical system, and the relay lens 10 is provided with a scanning mirror 11 . A condensing lens 12 and a detector 13 are arranged subsequently, and these constitute a temperature measurement optical system 51. scanning mirror 1
1 is configured such that its inclination angle changes two-dimensionally in the direction shown by a drive mechanism (not shown).
加熱された半導体基板３からの放射光束は、対物レンズ
９の近傍に設けられた図示しない絞りで制限されて中間
結像点に集光され、そこに半導体基板３の像が形成され
る。更に、放射光束はリレーレンズ１０により平行光束
とされて走査ミラー１１の光軸中心で反射し、集光レン
ズ１２によりディテクタ１３上に集光される。このよう
な測温用光学系によりディテクタ１３との共役面である
基板全面にわたる温度計測が可能となる。The emitted light flux from the heated semiconductor substrate 3 is restricted by an aperture (not shown) provided near the objective lens 9 and focused on an intermediate imaging point, where an image of the semiconductor substrate 3 is formed. Further, the emitted light beam is made into a parallel light beam by a relay lens 10, reflected at the center of the optical axis of a scanning mirror 11, and condensed onto a detector 13 by a condensing lens 12. Such a temperature measuring optical system makes it possible to measure the temperature over the entire surface of the substrate, which is a conjugate surface with the detector 13.
半導体基板の温度を１００℃〜１４ｏＯ℃と想定すると
、Ｗ ｉ ｅ ｎの変位側による最大放射光束の波長は
２μｍ〜８μｍであるので、この帯域の波長に感度を持
つディテクタを使うことが望ましい。赤外ランプとして
、ハロゲンランプやキセノン閃光放電灯が使われるため
、光源スペクトルは波長２μｍ以上で非常に微弱になる
が、半導体基板の温度測定のための光学系への混入を防
ぐ必要がある。このため、チャンバを透過する照射光（
波長４μｍ以下）を反射し、測温用波長（上記理由によ
り波長４〜８μｍの範囲内で選ぶことが望ましい）を透
過する薄膜処理をレンズ表面に施したり、同様の働きを
するダイクロイックミラーを測温用光学系中に挿入した
り、光源側に測温用波長を吸収するフィルタを付加する
ことが望ましい。また測温用光学系のレンズ、鏡筒、絞
りなどからの熱輻射がディテクタに至ると測温誤差を生
じるため、空冷、水冷などにより測温部は測定温度域か
ら大幅にずらした温度環境下に置く必要がある。Assuming that the temperature of the semiconductor substrate is 100° C. to 140° C., the wavelength of the maximum emitted light flux by the displacement side of Wien is 2 μm to 8 μm, so it is desirable to use a detector sensitive to wavelengths in this band. Since a halogen lamp or a xenon flash discharge lamp is used as an infrared lamp, the light source spectrum becomes extremely weak at wavelengths of 2 μm or more, but it is necessary to prevent this from entering the optical system for measuring the temperature of the semiconductor substrate. For this reason, the illumination light (
The lens surface may be treated with a thin film that reflects wavelengths of 4 μm or less and transmits temperature measurement wavelengths (preferably selected within the wavelength range of 4 to 8 μm for the reasons mentioned above), or dichroic mirrors that function similarly. It is desirable to insert it into the temperature measurement optical system or add a filter that absorbs the temperature measurement wavelength to the light source side. Furthermore, if thermal radiation from the lenses, lens barrel, diaphragm, etc. of the temperature measurement optical system reaches the detector, temperature measurement errors will occur. It is necessary to place it in
次に、第４図に基づきこの実施例の制御系について説明
する。Next, the control system of this embodiment will be explained based on FIG.
放射温度計であるディテクタ１３の出力はマイクロコン
ピュータ２１に入力されている。マイクロコンピュータ
２１には、サイリスタ等から成る３つのランプコントロ
ールユニット２２ａ。The output of the detector 13, which is a radiation thermometer, is input to the microcomputer 21. The microcomputer 21 includes three lamp control units 22a including thyristors and the like.
２２ｂ、２２ｃが後続し、それぞれのユニットがらラン
プ電源２３ａ、２３ｂ、２３ｃに制御信号を供給する。22b, 22c follow, and each unit supplies a control signal to lamp power supplies 23a, 23b, 23c.
各ランプ電源は制御信号に応じた電力を赤外ランプ４ａ
と５ａ、４ｂと５ｂ、４Ｃと５０にそれぞれ供給する。Each lamp power source supplies power to the infrared lamp 4a according to the control signal.
and 5a, 4b and 5b, and 4C and 50, respectively.
なお、同一の半径上で対向する上下一対の赤外ランプは
同一の制御信号により点灯制御される。Incidentally, a pair of upper and lower infrared lamps facing each other on the same radius are controlled to be turned on by the same control signal.
以上の実施例の構成において、赤外ランプ４ａ〜４ｃ、
５ａ〜５ｃが加熱手段を、走査ミラー１１等を含む測温
用光学系およびディテクタ１３により測温手段を、マイ
クロコンピュータ２１゜ランプコントロールユニット２
２ａ〜２２ｃが温度制御手段をそれぞれ構成する。In the configuration of the above embodiment, infrared lamps 4a to 4c,
5a to 5c are heating means, a temperature measuring optical system including a scanning mirror 11 and the like and a detector 13 are temperature measuring means, a microcomputer 21 and a lamp control unit 2.
2a to 22c constitute temperature control means, respectively.
次に、この実施例の動作を第５図のフローチャートに基
づいて説明する。Next, the operation of this embodiment will be explained based on the flowchart shown in FIG.
ステップＳ１において、マイクロコンピュータ２１から
ランプコントロールユニット２２ａ〜２２ｃに信号を送
り、ランプ電源２３ａ〜２３Ｃを介して赤外ランプ４ａ
〜４ｃ、５ａ〜５ｃを点灯してステップＳ２に進む。ス
テップＳ２では、走査ミラー１１を駆動して基板３の全
領域を走査し、複数の位置の温度を測定して基板の温度
分布を演算する。測温位置は処理する半導体基板の径に
応じて予め設定する。そして、測定位置における種々の
温度分布に対して赤外ランプをどのように制御すれば基
板の温度分布が所定の温度で均一化されるかをあらかじ
め計算又は実験的に求めておき、温度分布−赤外ランプ
点灯制御のマツプとしてＲＯＭにプログラムしておく。In step S1, a signal is sent from the microcomputer 21 to the lamp control units 22a to 22c, and the signal is sent to the infrared lamp 4a via the lamp power supplies 23a to 23C.
4c and 5a to 5c are turned on, and the process proceeds to step S2. In step S2, the scanning mirror 11 is driven to scan the entire area of the substrate 3, and the temperature at a plurality of positions is measured to calculate the temperature distribution of the substrate. The temperature measurement position is set in advance according to the diameter of the semiconductor substrate to be processed. Then, calculate or experiment in advance how to control the infrared lamp for various temperature distributions at the measurement position to make the temperature distribution of the substrate uniform at a predetermined temperature. It is programmed into the ROM as a map for infrared lamp lighting control.
次いでステップＳ３において、アニールが完了か否かを
判定し、肯定されるとステップＳ４において、赤外ラン
プ４ａ〜４ｃ、５ａ〜５ｃを消灯してこの手順を終了す
る。否定されるとステップＳ５において、上述したマツ
プに基づき各赤外ランプへの供給電力を制御し、ステッ
プＳ２に戻り、上述した動作を繰り返す。なお、放射温
度計による温度測定は周知のＰ １ａｎｃｋの式に基づ
き行う。Next, in step S3, it is determined whether or not the annealing has been completed, and if the answer is yes, in step S4, the infrared lamps 4a to 4c, 5a to 5c are turned off, and this procedure ends. If the answer is NO, in step S5, the power supplied to each infrared lamp is controlled based on the map described above, and the process returns to step S2 to repeat the above-described operations. Note that temperature measurement using a radiation thermometer is performed based on the well-known P 1anck equation.
この実施例では赤外ランプを環状光源としているため、
円形の半導体基板の温度分布は回転対称となり、曲率半
径の異なる各赤外ランプへの供給電力をそれぞれ独立し
て上述の如く制御すれば、半導体基板に対する照度むら
を任意に制御でき、以って所望の温度分布を比較的容易
に得ることができる。In this example, an infrared lamp is used as an annular light source, so
The temperature distribution of a circular semiconductor substrate is rotationally symmetrical, and if the power supplied to each infrared lamp with a different radius of curvature is controlled independently as described above, the unevenness of illuminance on the semiconductor substrate can be arbitrarily controlled. A desired temperature distribution can be obtained relatively easily.
以上の制御は、所定温度で保持する時に限らず、昇温時
および降温時にも行うのが望ましい。また、放射温度計
による走査速度は、基板温度測定の時間分解能と温度分
解能とに関係しており、走査速度が速いと複数測温位置
全ての測温時間は短くなるが、温度分解能が低下する。It is desirable to perform the above control not only when maintaining a predetermined temperature, but also when increasing and decreasing the temperature. In addition, the scanning speed of the radiation thermometer is related to the time resolution and temperature resolution of substrate temperature measurement; if the scanning speed is fast, the temperature measurement time at all multiple temperature measurement positions will be shortened, but the temperature resolution will decrease. .
ランプアニール装置では加熱時間が数十秒なので、時間
分解能、すなわち走査速度を０．１秒程度にするのが好
ましい。Since the heating time in a lamp annealing device is several tens of seconds, it is preferable to set the time resolution, that is, the scanning speed, to about 0.1 seconds.
尚、上記実施例では、上下両面に配置した赤外ランプで
基板を加熱する場合を示したが、赤外ランプを片面だけ
に配置した場合も同様である。また、本発明に係る光加
熱装置は、ランプアニール装置以外、スパッタリング装
置、エピタキシャル装置、アッシング装置などその他の
半導体製造工程の補助加熱装置にも適用できる。In the above embodiment, the case where the substrate is heated by infrared lamps arranged on both the upper and lower surfaces is shown, but the same applies to the case where the infrared lamps are arranged only on one side. Furthermore, the optical heating device according to the present invention can be applied to auxiliary heating devices for other semiconductor manufacturing processes, such as sputtering devices, epitaxial devices, and ashing devices, in addition to lamp annealing devices.
Ｇ０発明の効果
本発明によれば、測温手段を光学的に走査することによ
り半導体基板上の複数の位置の温度を測定し、その測定
結果に基づいて赤外ランプ等の加熱手段による加熱パワ
ーを制御するようにしたので、ひとつの測温手段により
実時間にて半導体基板の温度分布を所望通りに制御でき
る。また種々の大きさの半導体基板に対しても従来のよ
うに温度センサの位置を変更する等の煩雑な作業なしに
処理でき、作業性が向上すると共に、半導体基板上の任
意の多数点についての情報をリアルタイムで得ることが
可能である。G0 Effects of the Invention According to the present invention, the temperatures at multiple positions on the semiconductor substrate are measured by optically scanning the temperature measurement means, and the heating power of the heating means such as an infrared lamp is adjusted based on the measurement results. Therefore, the temperature distribution of the semiconductor substrate can be controlled as desired in real time using one temperature measuring means. In addition, it is possible to process semiconductor substrates of various sizes without the need for complicated operations such as changing the position of the temperature sensor as in the past, improving work efficiency and processing at any number of points on the semiconductor substrate. It is possible to obtain information in real time.
従って、実施例のようにランプアニール装置として用い
て半導体基板の温度分布を均一に制御すれば、スリップ
ラインが防止でき、かつ不純物の活性化が一様に行え半
導体としての特性を均一化できる。更に、活性化以外の
用途として、酸化。Therefore, if the temperature distribution of the semiconductor substrate is uniformly controlled by using it as a lamp annealing device as in the embodiment, slip lines can be prevented, impurities can be uniformly activated, and the characteristics as a semiconductor can be made uniform. Furthermore, as a use other than activation, oxidation.
窒化、シリサイド化ガラスリフローなどに用いても、基
板の全領域にわたって均一な反応が得られる。Even when used for nitriding, silicidation glass reflow, etc., a uniform reaction can be obtained over the entire area of the substrate.
更にまた、光加熱装置をスパッタリング装置等。Furthermore, optical heating equipment, sputtering equipment, etc.
他の半導体製造工程の補助加熱装置として用いる場合に
も、基板全領域にわたり均一な反応が得られる。Even when used as an auxiliary heating device in other semiconductor manufacturing processes, a uniform reaction can be obtained over the entire substrate area.
第１図はクレーム対応図である。
第２図〜第５図は本発明の一実施例を示すもので、第２
図はランプアニール装置の概略構成図、第３図は第２図
の平面図、第４図は制御系を示すブロック図、第５図は
処理手順例を示すフローチャートである。
１：チャンバ
３：半導体基板
４ａ〜４ｃ、５ａ〜５ｃ：赤外ランプ
１３：ディテクタ
２１：マイクロコンピュータ
２２ａ〜２２ｃ：ランプコントロールユニット２３ａ〜
２３ｃ：ランプ電源
５１ ： ８１ｑ温用光学系
１０１：半導体基板
１ｏ２：加熱手段
１０３：測温手段
１０４：温度制御手段
特許出願人 日本光学工業株式会社
代理人弁理士 永 井 冬 紀
第１図
第２図
第３図FIG. 1 is a complaint correspondence diagram. Figures 2 to 5 show one embodiment of the present invention.
3 is a plan view of FIG. 2, FIG. 4 is a block diagram showing a control system, and FIG. 5 is a flowchart showing an example of a processing procedure. 1: Chamber 3: Semiconductor substrates 4a-4c, 5a-5c: Infrared lamp 13: Detector 21: Microcomputer 22a-22c: Lamp control unit 23a-
23c: Lamp power source 51: 81q Warm optical system 101: Semiconductor substrate 1o2: Heating means 103: Temperature measuring means 104: Temperature control means Patent applicant Nippon Kogaku Kogyo Co., Ltd. Representative patent attorney Norihiro Nagai, Figure 1, Figure 2 Figure 3
Claims (1)
導体基板上を光学的に走査して当該基板上の少なくとも
２点以上の温度を測定する測温手段と、 この測温手段での測定結果に基づき前記加熱手段を実時
間で制御する温度制御手段とを具備することを特徴とす
る光加熱装置。[Scope of Claims] A heating means for heating a semiconductor substrate by irradiating it with light; a temperature measuring means for optically scanning the semiconductor substrate to measure the temperature at at least two points on the substrate; An optical heating device characterized by comprising: a temperature control means for controlling the heating means in real time based on the measurement result of the temperature measurement means.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021383A JPS63188940A (en) | 1987-01-30 | 1987-01-30 | System for heating by light |
| US07/092,125 US4859832A (en) | 1986-09-08 | 1987-09-02 | Light radiation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021383A JPS63188940A (en) | 1987-01-30 | 1987-01-30 | System for heating by light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63188940A true JPS63188940A (en) | 1988-08-04 |
Family
ID=12053566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62021383A Pending JPS63188940A (en) | 1986-09-08 | 1987-01-30 | System for heating by light |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188940A (en) |
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