JPS63177494A - Multiple-wavelength light source - Google Patents
Multiple-wavelength light sourceInfo
- Publication number
- JPS63177494A JPS63177494A JP861887A JP861887A JPS63177494A JP S63177494 A JPS63177494 A JP S63177494A JP 861887 A JP861887 A JP 861887A JP 861887 A JP861887 A JP 861887A JP S63177494 A JPS63177494 A JP S63177494A
- Authority
- JP
- Japan
- Prior art keywords
- diffraction grating
- laser
- lasers
- substrate
- diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 238000003776 cleavage reaction Methods 0.000 abstract 2
- 230000007017 scission Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は複数のレーザ光を同一領域から基板面に垂直
方向に取り出すことのできる波長多重光源に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wavelength multiplexed light source that can extract a plurality of laser beams from the same area in a direction perpendicular to a substrate surface.
第４図は例えばＩＥＥＥジャーナル オプ クオンタム
エレクトロニクス、ＱＥ−１３巻、 ２２０頁（１９
７７年） （Ｉ Ｅ Ｅ Ｅ Ｊｏｕｒｎａｌ ｏ
ｆ ＱｕａｎｔｕｍＥｌｅｃｔｒｏｎｉｃｓ ｖｏｌ、
ＱＥ−１３，ｐ、２２０（１９７７））に記載された従
来の波長多重光源を示す構成図であり、図において１１
は基板、１２８〜１２ｆは６個の分布帰還型（Ｄ Ｆ
Ｂ ； Ｄｉｓｔｒｉｂｕｔｅｄ Ｆｅｅｄｂａｃｋ）
レーザ、１３は光導波路である。Figure 4 shows, for example, IEEE Journal Op Quantum Electronics, Volume QE-13, Page 220 (19
1977) (I E E E Journal o
f Quantum Electronics vol.
QE-13, p, 220 (1977)) is a configuration diagram showing a conventional wavelength multiplexed light source;
is the substrate, and 128 to 12f are six distributed feedback type (D F
B; Distributed Feedback)
The laser 13 is an optical waveguide.
ＤＦＢレーザ１２ａ〜１２ｆは回折格子のピソチを９人
ずつ変えることにより、発振波長が２０人ずつ変わるよ
うに設計されている。各レーザ光は導波路１３の中を伝
搬し、出力端に集められて・１本のファイバーに結合さ
れる。The DFB lasers 12a to 12f are designed so that the oscillation wavelength is changed by 20 by changing the pisochi of the diffraction grating by 9. Each laser beam propagates through the waveguide 13 and is collected at the output end and coupled into a single fiber.
［発明が解決しようとする問題点〕
従来の多波長半導体レーザは以上のように構成されてい
るので、複数のレーザ光を１本の光導波路に導くために
複雑な導波路の形成を必要とするなどの問題点があった
。[Problems to be solved by the invention] Since the conventional multi-wavelength semiconductor laser is configured as described above, it is not necessary to form a complicated waveguide in order to guide multiple laser beams into one optical waveguide. There were problems such as.
この発明は上記のような問題点を解消するためになされ
たもので、簡単な構成で複数のレーザビームを基板の同
一領域から指向性良く取り出すことのできる波長多重光
源を得ることを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to obtain a wavelength multiplexed light source that can extract multiple laser beams with good directionality from the same area of a substrate with a simple configuration. .
この発明に係る波長多重光源は同一基板上に異なる方向
に配置された複数個の分布ブラッグ反射型（Ｄ Ｂ Ｒ
； Ｄｉｓｔｒｉｂｕｔｅｄ Ｂｒａｇｇ ｒｅｆｌｅ
ｃｔｉｏｎ）レーザあるいはＤ Ｆ Ｂ （Ｄｉｓｔｒ
ｉｂｕｔｅｄ ｆｅｅｄｂａｃｋ）レーザと、上記基板
上の同一領域に上記複数のレーザに対応した回折格子を
相互に重畳して形成してなる回折格子体とを備えたもの
である。The wavelength multiplexed light source according to the present invention includes a plurality of distributed Bragg reflection type (DBR) arranged on the same substrate in different directions.
; Distributed Bragg Refle
ction) laser or D F B (Distr
ibbuted feedback) laser, and a diffraction grating body formed by mutually overlapping diffraction gratings corresponding to the plurality of lasers in the same area on the substrate.
この発明における波長多重光源は同一基板上に異なる方
向に配置された複数個のＤ Ｂ Ｒ（Ｄｉｓｔｒｉｂｕ
ｔｅｄ Ｂｒａｇｇ ｒｅｆｌｅｃｔｉｏｎ） レーザ
あるいはＤＦＢ（Ｄｉｓｔｒｉｂｕｔｅｄ ｆｅｅｄｂ
ａｃｋ） レーザと、上記基板上の同一領域に上記複数
のレーザに対応した回折格子を相互に重畳して形成して
なる回折格子体とを備え、上記複数のレーザがそれぞれ
対応する上記回折格子の２次の回折により、活性領域で
発生したレーザ光の一部をフィードバックされ、同時に
、−次の回折によりレーザ光の一部を基板に垂直方向に
出射する構成としたから、簡単な構成で複数のレーザ光
を波長多重して指向性よく出射できる。The wavelength multiplexed light source in this invention includes a plurality of DBRs (Distribution Light Sources) arranged in different directions on the same substrate.
ted Bragg reflection) laser or DFB (Distributed feedb)
ack) A laser, and a diffraction grating body formed by superimposing diffraction gratings corresponding to the plurality of lasers on the same area on the substrate, wherein each of the diffraction gratings corresponds to each of the plurality of lasers. A part of the laser light generated in the active region is fed back through second-order diffraction, and at the same time, a part of the laser light is emitted perpendicularly to the substrate through second-order diffraction. Laser light can be wavelength-multiplexed and emitted with good directionality.
以下、この発明の一実施例を図について説明する。第１
図は本発明の一実施例による波長多重光源を示す図であ
り、図において１は基板、Ａ、 Ｂはそれぞれ発振波長
の異なるＤＢＲレーザであり、２ａ、２ｂはＤＢＲレー
ザの電流注入部、３はＤＢＲレーザＡ、Ｂの回折格子を
相互に重畳して形成した回折格子体である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows a wavelength multiplexed light source according to an embodiment of the present invention. In the figure, 1 is a substrate, A and B are DBR lasers with different oscillation wavelengths, 2a and 2b are current injection parts of the DBR laser, and 3 is a diffraction grating body formed by overlapping the diffraction gratings of DBR lasers A and B with each other.
第２図はＤＢＲレーザＡ、Ｂの構造の一例を示す図であ
り、図において、４はＧａＡｓ基板、５ａは下側クラッ
ド層、６は多重量子井戸（ＧａＡｓ／ＡＩＧａＡｓ）Ｊ
ｉ、５ｂは上側クラッド層、７はキャップ層、３は上側
クラッド層５ｂ上に形成された回折格子、８は下側電極
、２は上側電極である。FIG. 2 is a diagram showing an example of the structure of DBR lasers A and B. In the figure, 4 is a GaAs substrate, 5a is a lower cladding layer, and 6 is a multiple quantum well (GaAs/AIGaAs) J
i and 5b are upper cladding layers, 7 is a cap layer, 3 is a diffraction grating formed on the upper cladding layer 5b, 8 is a lower electrode, and 2 is an upper electrode.
第２図のＤＢＲレーザは片側を襞間し、この面を一方の
反射鏡として使用し、もう一方は回折格子３による反射
を用いている。The DBR laser shown in FIG. 2 has a fold on one side, and uses this surface as a reflecting mirror on one side, and uses reflection by a diffraction grating 3 on the other side.
次に動作について説明する。電流注入により多重量子井
戸層６で発生した光は襞間面と回折格子で多重反射しレ
ーザ光として襞間面と回折格子から出ていく。ここで回
折格子からレーザ光の一部を基板に垂直方向に取り出す
ためには回折格子の周期をレーザ波長と同一にする必要
がある。すなわち２次の回折効果によりレーザ光のフィ
ードバックが起こるとともに、１次の回折効果によりレ
ーザ光の一部が基板に垂直方向に取り出せることが本発
明が利用する基本的効果である。Next, the operation will be explained. Light generated in the multi-quantum well layer 6 by current injection undergoes multiple reflections on the inter-fold surfaces and the diffraction grating, and exits from the inter-fold surfaces and the diffraction grating as laser light. Here, in order to extract part of the laser beam from the diffraction grating in a direction perpendicular to the substrate, it is necessary to make the period of the diffraction grating the same as the laser wavelength. That is, the basic effect utilized by the present invention is that feedback of the laser beam occurs due to the second-order diffraction effect, and a part of the laser beam can be taken out in a direction perpendicular to the substrate due to the first-order diffraction effect.
第１図に示す様に、２つのＤＢＲレーザＡ、 Ｂがそれ
ぞれ２次の回折格子のピッチ、八１．Δ３をもつ場合を
考える。このときレーザＡはλヶ＝η。ｉｔ ＡＡなる
波長でレーザ発振し、レーザＢはλ、−ηａｆｆＡｌで
発振する。ここでηｏｆｔは導波路の有効屈折率である
。図に示す様にレーザＡ。As shown in FIG. 1, two DBR lasers A and B each have a second-order diffraction grating pitch, 81. Consider the case with Δ3. At this time, laser A is λ = η. The laser oscillates at a wavelength of it AA, and the laser B oscillates at λ, -ηaffAl. Here ηoft is the effective refractive index of the waveguide. Laser A as shown in the figure.
Ｂのそれぞれに対応する回折格子は同一領域に相互に重
畳され回折格子体３を形成しているので波長λ４．λ、
の２つのレーザビームがこの領域で結合され基板に垂直
方向に取り出せる。゛なお、上記実施例では２個のレー
ザからの光を基板に垂直方向に取り出すことを考えたが
、さらに多数のレーザ光も同様に取り出すことが可能で
ある。Since the diffraction gratings corresponding to each of wavelengths λ4, . λ,
The two laser beams are combined in this region and can be taken out in a direction perpendicular to the substrate. Note that in the above embodiment, it was considered that light from two lasers is extracted in a direction perpendicular to the substrate, but it is also possible to extract a larger number of laser beams in the same way.
また第３図はＤ Ｆ Ｂ （Ｄｉｓｔｒｉｂｕｔｅｄ
Ｆｅｅｄｂａｃｋ）レーザ２個Ｃ，Ｄを直角方向に回折
格子を一部重ね合わせる様に集積化したものを示す図で
あり、図において２ｃ’、２ｄ’はそれぞれＤＦＢレー
ザＣとＤの電流注入用の上部電極である。両ＤＦＢの回
折格子が重なり合う領域の上部電極は取り除かれ回折格
子体３が形成されており、ここから基板に垂直方向に２
つのＤＦＢレーザの出力光を取り出すことができる。こ
の場合も前述の実施例同様に３個以上のＤＦＢレーザの
集積化が可能である。Also, Figure 3 shows D F B (Distributed
(Feedback) This is a diagram showing two lasers C and D integrated in such a way that their diffraction gratings are partially overlapped in the perpendicular direction. In the figure, 2c' and 2d' are for current injection of DFB lasers C and D, respectively. This is the upper electrode. The upper electrode in the area where the diffraction gratings of both DFBs overlap is removed to form a diffraction grating body 3, from which two
The output light of two DFB lasers can be extracted. In this case as well, three or more DFB lasers can be integrated as in the previous embodiment.
以上のように、この発明によれば、同一基板上に異なる
方向に配置された複数個のＤ Ｂ Ｒ（Ｄｉｓｔｒｉｂ
ｕｔｅｄ Ｂｒａｇｇ ｒｅｆｌｅｃｔｉｏｎ） レ
ーザあるいはＤＦＢ （Ｄｉｓｔｒｉｂｕｔｅｄ ｆｅ
ｅｄｂａｃｋ） レーザと、上記基板上の同一領域に上
記複数のレーザに対応した回折格子を相互に重畳して形
成してなる回折格子体とを備え、上記複数のレーザの各
々に対応する回折格子をレーザ光の反射鏡として用いる
と同時に、レーザ光を外部に取り出すカップラーとして
も利用するように構成したから、レーザ光の取り出す領
域が大きく従って出射ビームの拡がりが小さい指向性の
良いビームが得られるうえ、複数のレーザビームを容易
に結合して外部に取り出せる効果がある。As described above, according to the present invention, a plurality of DBRs (Distributes) arranged in different directions on the same substrate
Bragg reflection) laser or DFB (Distributed fe
edback) A laser, and a diffraction grating body formed by superimposing diffraction gratings corresponding to the plurality of lasers on the same area on the substrate, and a diffraction grating corresponding to each of the plurality of lasers. Because it is configured to be used as a reflector for laser light and at the same time as a coupler for extracting laser light to the outside, the area from which the laser light is extracted is large, and the emitted beam has a small spread and a beam with good directivity can be obtained. This has the effect of allowing multiple laser beams to be easily combined and extracted to the outside.
第１図はこの発明の一実施例による波長多重光源を示す
構成図、第２図はその断面構造を示す図、１は基板、Ａ
、ＢはＤＢＲレーザ、２ａ、２ｂはＤＢＲレーザＡ、
Ｂの電流注入部、Ｃ，ＤはＤＦＢレーザ、２ｃ”、２ｄ
′はＤＦＢレーザＣ２Ｄの上部電極、３は回折格子体。FIG. 1 is a configuration diagram showing a wavelength multiplexed light source according to an embodiment of the present invention, FIG. 2 is a diagram showing its cross-sectional structure, 1 is a substrate, A
, B is a DBR laser, 2a and 2b are DBR lasers A,
B is the current injection part, C and D are DFB lasers, 2c", 2d
' is the upper electrode of the DFB laser C2D, and 3 is the diffraction grating.
Claims (4)
布ブラッグ反射型レーザあるいは分布帰還型レーザと、 上記基板上の同一領域に上記複数のレーザに対応した回
折格子を相互に重畳して形成してなる回折格子体とを備
えたことを特徴とする波長多重光源。(1) Multiple distributed Bragg reflection lasers or distributed feedback lasers arranged in different directions on the same substrate, and diffraction gratings corresponding to the plurality of lasers superimposed on the same area on the substrate. A wavelength multiplexed light source characterized by comprising a diffraction grating formed by forming a diffraction grating.
のレーザからの光のフィードバックを行うことを特徴と
する特許請求の範囲第１項記載の波長多重光源。(2) The wavelength multiplexed light source according to claim 1, wherein each of the diffraction gratings feeds back light from the plurality of lasers by a second-order diffraction effect.
り上記各レーザからのレーザ光を上記基板面に垂直に出
射することにより波長多重光を出射することを特徴とす
る特許請求の範囲第１項または第２項記載の波長多重光
源。(3) The above-mentioned diffraction grating body emits wavelength-multiplexed light by emitting the laser beams from the respective lasers perpendicularly to the substrate surface due to the first-order diffraction effect of each diffraction grating. The wavelength multiplexed light source according to item 1 or 2.
配置形成され該２本のレーザの交点に上記回折格子体を
備えたことを特徴とする特許請求の範囲第１項ないし第
３項のいずれかに記載の波長多重光源。(4) The above-mentioned two lasers are arranged vertically in a cross shape on the same substrate, and the above-mentioned diffraction grating body is provided at the intersection of the two lasers. The wavelength multiplexed light source according to any one of Item 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP861887A JPS63177494A (en) | 1987-01-17 | 1987-01-17 | Multiple-wavelength light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP861887A JPS63177494A (en) | 1987-01-17 | 1987-01-17 | Multiple-wavelength light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63177494A true JPS63177494A (en) | 1988-07-21 |
Family
ID=11697937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP861887A Pending JPS63177494A (en) | 1987-01-17 | 1987-01-17 | Multiple-wavelength light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177494A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964334A (en) * | 1995-08-28 | 1997-03-07 | Toshiba Corp | Integrated element of light emitting element and external modulator |
| US6185240B1 (en) | 1998-01-30 | 2001-02-06 | Motorola, Inc. | Semiconductor laser having electro-static discharge protection |
| WO2003067724A1 (en) * | 2002-02-08 | 2003-08-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and its manufacturing method |
| JP2009206256A (en) * | 2008-02-27 | 2009-09-10 | Denso Corp | Semiconductor laser device |
| US8369372B1 (en) | 2011-07-29 | 2013-02-05 | Mitsubishi Electric Corporation | Laser device |
| WO2022040468A1 (en) * | 2020-08-20 | 2022-02-24 | Apple Inc. | Integrated edge-generated vertical emission laser |
-
1987
- 1987-01-17 JP JP861887A patent/JPS63177494A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964334A (en) * | 1995-08-28 | 1997-03-07 | Toshiba Corp | Integrated element of light emitting element and external modulator |
| US6185240B1 (en) | 1998-01-30 | 2001-02-06 | Motorola, Inc. | Semiconductor laser having electro-static discharge protection |
| WO2003067724A1 (en) * | 2002-02-08 | 2003-08-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and its manufacturing method |
| US7009216B2 (en) | 2002-02-08 | 2006-03-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of fabricating the same |
| JP2009206256A (en) * | 2008-02-27 | 2009-09-10 | Denso Corp | Semiconductor laser device |
| US8369372B1 (en) | 2011-07-29 | 2013-02-05 | Mitsubishi Electric Corporation | Laser device |
| WO2022040468A1 (en) * | 2020-08-20 | 2022-02-24 | Apple Inc. | Integrated edge-generated vertical emission laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6775427B2 (en) | Laterally coupled wave guides | |
| US6760359B2 (en) | Grating-outcoupled surface-emitting lasers with flared gain regions | |
| US7450624B2 (en) | Grating—outcoupled surface-emitting lasers | |
| US9995876B2 (en) | Configurable compact photonic platforms | |
| JPH0738205A (en) | Surface-light emitting laser diode array, driving method thereof, photodetector, photodetector array, space light connecting system and multiple-wavelength optical communication system | |
| JPH11513534A (en) | Optical resonance structure | |
| US10063028B2 (en) | High SMSR unidirectional etched lasers and low back-reflection photonic device | |
| US7113526B2 (en) | Multi-wavelength grating-outcoupled surface emitting laser system | |
| CA2473396C (en) | High coherent power, two-dimensional surface-emitting semiconductor diode array laser | |
| JPS63177494A (en) | Multiple-wavelength light source | |
| US6647048B2 (en) | Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation | |
| US9373936B1 (en) | Resonant active grating mirror for surface emitting lasers | |
| US6636547B2 (en) | Multiple grating-outcoupled surface-emitting lasers | |
| JPS63150981A (en) | Semiconductor laser | |
| JP3595677B2 (en) | Optical isolator, distributed feedback laser and optical integrated device | |
| US10209445B2 (en) | Method of fabricating a compact photonics platform | |
| JPS63147388A (en) | Semiconductor laser | |
| JPH0722216B2 (en) | Semiconductor laser | |
| JPS61231791A (en) | Semiconductor light emitting element | |
| JPH10209554A (en) | Surface emission type semiconductor laser | |
| JPH0730192A (en) | Semiconductor laser | |
| JPH07263797A (en) | Semiconductor laser device | |
| Bengtsson et al. | Diffractive solutions in integrated optics? | |
| JPH04373193A (en) | Integrated light emitting device | |
| JPH0621580A (en) | Integrated optical semiconductor device |