JPS63168651A - Stripping agent composition for photoresist - Google Patents
Stripping agent composition for photoresistInfo
- Publication number
- JPS63168651A JPS63168651A JP10887A JP10887A JPS63168651A JP S63168651 A JPS63168651 A JP S63168651A JP 10887 A JP10887 A JP 10887A JP 10887 A JP10887 A JP 10887A JP S63168651 A JPS63168651 A JP S63168651A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- methylformamide
- stripping
- butyrolactone
- dimethylacetamide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 22
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims abstract description 14
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000001298 alcohols Chemical class 0.000 claims abstract description 5
- 239000004094 surface-active agent Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 17
- 239000000126 substance Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 8
- 239000002202 Polyethylene glycol Substances 0.000 description 7
- 235000014113 dietary fatty acids Nutrition 0.000 description 7
- 229930195729 fatty acid Natural products 0.000 description 7
- 239000000194 fatty acid Substances 0.000 description 7
- 229920001223 polyethylene glycol Polymers 0.000 description 7
- 150000004665 fatty acids Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- -1 1j Kaisui 51-72505) Chemical class 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- RPUJTMFKJTXSHW-UHFFFAOYSA-N 1-(methoxymethoxy)ethanol Chemical compound COCOC(C)O RPUJTMFKJTXSHW-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- PQDSQOCJSMICOM-UHFFFAOYSA-N [Cl].OC1=CC=CC=C1 Chemical compound [Cl].OC1=CC=CC=C1 PQDSQOCJSMICOM-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000013040 bath agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920001522 polyglycol ester Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、集積回路製造に用いるフォトレジスト、特に
ポジ型フォトレジストヲ用済み後除去するために用いる
レジスト剥離剤組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a resist stripping composition used for removing photoresists used in integrated circuit manufacturing, particularly positive photoresists, after use.
フォトレジストは集積回路の製造に用いられる感光性の
樹脂で、シリコンウェハー等の無機基質上の所望の位置
に、エツチングや不純物注入等の操作を加えるために使
用される。フォトレジストには大さく分けると、光の当
った所が現像液に溶は易くなるポジ型と、その逆のネガ
型があり、それぞれの特徴に応じて使い分けられている
。ポジ型レジストはアルカリ可溶ノボラック樹脂にキノ
ンジアザイド類の分子をスルホン基金弁して結合し友も
のが最も一般的であり、ｆｉＩＪい解像度が得られるこ
とから最近の＾集積化の要求に応えるレジストとして使
用量が急増している。Photoresist is a photosensitive resin used in the manufacture of integrated circuits, and is used to perform operations such as etching and impurity implantation at desired locations on an inorganic substrate such as a silicon wafer. Photoresists can be roughly divided into positive types, in which areas exposed to light are more easily dissolved in developer, and negative types, which are used differently depending on their characteristics. The most common positive resist is one in which quinonediazide molecules are bonded to an alkali-soluble novolac resin using a sulfone bond, and because it provides high resolution, it has been used as a resist that meets the recent demands for integration. Usage is rapidly increasing.
集積回路の製造工程では、レジストを無機基質上に均一
に塗布した後、フォトマスクを通して露光し、引き続い
て適当な溶剤で現像し、微細なパターンを無機基質上に
形成する。続くエツチングや不縄物江人の工程では、こ
のレジストによる微細なパターンは保護被膜となって、
無機基質上に微細な電子回路が形成され、その後、不要
となつ友レジスト被膜は剥離除去される。In the manufacturing process of integrated circuits, a resist is uniformly applied onto an inorganic substrate, exposed to light through a photomask, and subsequently developed with a suitable solvent to form a fine pattern on the inorganic substrate. In the subsequent etching and funomono Ejin processes, this fine resist pattern becomes a protective film,
A fine electronic circuit is formed on the inorganic substrate, and then the unnecessary resist film is peeled off.
（従来のｆｆ術）
レジストのφｊ嘔には、各種の有機あるいは無機系薬品
が研究され用いられてき友。実用的に用いられている例
としては、有機系では、有機スルホン酸を生体とする剥
離剤１ｊ開隋５１−７２５０５など）、アルキレングリ
コール金主体とする剥離剤（待公昭４５−７６９５など
）があり、ま九。(Conventional FF Technique) Various organic and inorganic chemicals have been researched and used to remove resist defects. As examples of organic systems that are practically used, there are stripping agents based on organic sulfonic acids such as 1j Kaisui 51-72505), and stripping agents based on alkylene glycol gold (Sho 45-7695, etc.). Yes, maku.
無機系では、硫酸と過酸化水素の混合物を用いる方法（
ピラニア洗浄）や、アンモニアと過酸化水素、塩酸と過
酸化水素、およびフッ酸による洗浄を組合わせ九方法（
ＲＣＡ洗浄）などがある。For inorganic systems, a method using a mixture of sulfuric acid and hydrogen peroxide (
Piranha cleaning), nine methods combining cleaning with ammonia and hydrogen peroxide, hydrochloric acid and hydrogen peroxide, and hydrofluoric acid (
RCA cleaning).
有機系の剥離剤は、一般的に剥離力が低く、特に選択イ
オン注入等の工程で着しく変質硬化しｔレジストに対し
ては、はとんど剥離効果を示さない。有機スルホン酸を
主体とする剥離剤は、有機系では最も一般的に用いられ
ているが、金属に対する腐食性があるため、しばしばア
ルミニウム配線ヲ付し之りエハーのレジスト剥離におい
て問題を引きおこし、さらに１通常有毒なフェノールを
含有するため、安全上問題である。また、ポジ型レジス
トの剥離に関しては、ジメチルスルホキシド、Ｎ、Ｎ−
ジメチルホルムアミド等の高極性浴剤金主体とする組成
物が有効であるとの発表があるが（ＵＳＰ ４３０４６
８１．ＵＳＰ４４０５０２９．Ｌ￥ｆ開昭６０−６６４
２４など）、これらの組成物は、一般的には実用化され
ていない。これは、レジストの剥離力が不十分な上に、
並属イオン等のイオン性物質に対する溶解力がほとんど
ないためと考えられる。無機基質上に何らかの原因で付
着した金属イオンは、拡散工程等の高温処理を受ける工
程において無機基体中にしみ込み、集積回路の性能に致
命的な欠陥を与える友め、レジスト剥離工程では、これ
らの汚れが完全に除去されている必要があるのである。Organic stripping agents generally have a low stripping force, and in particular, undergo severe deterioration and hardening during processes such as selective ion implantation, and rarely exhibit a stripping effect on t-resist. Stripping agents based on organic sulfonic acids are most commonly used in organic systems, but because they are corrosive to metals, they often cause problems in resist stripping from wafers with aluminum wiring attached. Furthermore, it is a safety problem because it usually contains toxic phenol. In addition, regarding peeling of positive resist, dimethyl sulfoxide, N, N-
It has been announced that highly polar bath agents such as dimethylformamide and other gold-based compositions are effective (USP 43046).
81. USP4405029. L￥f Kaisho 60-664
24, etc.), these compositions have not generally been put into practical use. This is because the peeling force of the resist is insufficient, and
This is thought to be because it has almost no dissolving power for ionic substances such as parallel ions. Metal ions that adhere to an inorganic substrate for some reason seep into the inorganic substrate during high-temperature processes such as diffusion processes, causing fatal defects in the performance of integrated circuits. The dirt must be completely removed.
一万、無機系の剥離剤は、レジストの剥離力、イオン性
物質の除去能力ともに優れているが、高濃度の酸、アル
カリ、過酸化水素を用いる友め。Inorganic stripping agents have excellent resist stripping power and ionic substance removal ability, but they use highly concentrated acids, alkalis, and hydrogen peroxide.
作業安全上危険性が高く、さらに、過酸化水素は経時的
に分解するため、剥離剤の濃度管理が難しいという欠点
がある。また、金属に対する腐食性が強いため、アルミ
ニウム配線を付したウエノ・−のレジスト剥離には適用
できない。It is highly dangerous in terms of work safety, and furthermore, hydrogen peroxide decomposes over time, making it difficult to control the concentration of the stripping agent. Furthermore, since it is highly corrosive to metals, it cannot be applied to resist stripping of Ueno-- with aluminum wiring.
（先例が解決しようとする問題点）
前記のように、従来のレジスト剥離剤は、有機系ｈ・よ
ひ無蝋糸の剥離剤いずれも、それぞれ欠点があり、レジ
スト剥離剤として充分満足できるものは得られていない
。(Problems to be solved by the precedent) As mentioned above, the conventional resist stripping agents, organic type H and waxless thread stripping agents, each have their own drawbacks, but none of them are fully satisfactory as resist stripping agents. has not been obtained.
（問題点全解決するための手段） 本先例者らは、上記の問題点を解決するため。(Means to solve all problems) In order to solve the above-mentioned problems, the present precedents.
高いレジスト剥離力と、イオン性物質の溶解力を有し、
並属に対する腐貢性がなく、さらに、安全性の扁いレジ
スト剥離剤について鋭意検討し次結果１本発明を元成す
るに主った。It has high resist peeling power and ionic substance dissolving power,
The inventors of the present invention have conducted intensive studies on resist stripping agents that are free from harmful effects and are also safe, resulting in the formation of the present invention.
すなわち、本発明は５組成物の全量に対し、γ−ブチロ
ラクトン、Ｎ−メチルホルムアミド、Ｎ、Ｎ−ジメチル
ホルムアミド％Ｎ、Ｎ−ジメチルアセトアミドより選ば
れる１種以上を５０容量係以上、およびアルコール類、
水より選ばれる１種以上ｆ、５〜５０容ｉｔ％含有して
なること全特徴とするフォトレジストの剥離剤組成物で
あり、また。That is, the present invention includes at least 50% by volume of one or more selected from γ-butyrolactone, N-methylformamide, N,N-dimethylformamide, N-dimethylacetamide, and alcohols, based on the total amount of the 5 compositions. ,
A photoresist stripper composition characterized in that it contains 5 to 50 volume % of one or more types selected from water.
組成物の全量に対し、前記のほかに、組成物の全量に対
し、 ０．０１容ｔ％以上の界面活性剤を含有してなる
ことを特徴とするフォトレジストの剥離剤組成物である
。This is a photoresist stripper composition characterized by containing, in addition to the above, 0.01% by volume or more of a surfactant based on the total amount of the composition.
本発明においてアルコール類としては、飽オロ１価アル
コール、例えば、ブチルアルコール、アミルアルコール
、ヘキシルアルコール、ヘプチルアルコールなどの各種
異性体のほか、多価アルコ−／’ｍ、例、ｔば、エチレ
ンクリコール、プロピレングリコール、１．５−ブタン
ジオール、グリセリンなどや、その誘導体１例えば、エ
チレングリコールモノブチルエーテル、プロピレングリ
コールモノメチルエーテル、メトキシメトキシエタノー
ルなどが例さして挙げられる。In the present invention, the alcohols include various isomers such as saturated oromonohydric alcohols, such as butyl alcohol, amyl alcohol, hexyl alcohol, and heptyl alcohol, as well as polyhydric alcohols such as -/'m, e.g. Examples include licor, propylene glycol, 1,5-butanediol, glycerin, and derivatives thereof such as ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and methoxymethoxyethanol.
界面活性剤としては、金属イオンを含まなり非イオン系
のものが最も好ましく、脂肪酸モノグリセリンエステル
、脂肪酸ポリグリコールエステル。As the surfactant, nonionic surfactants containing metal ions are most preferred, such as fatty acid monoglycerin esters and fatty acid polyglycol esters.
脂肪酸ンルビタンエステル、脂肪酸蔗糖エステル。Fatty acid rubitan ester, fatty acid sucrose ester.
脂肪酸アルカノールアミド、脂肪酸ポリエチレングリコ
ール縮合物、脂肪酸アミド・ポリエチレングリコール縮
合物、脂肪族アルコール・ポリエチレングリコール縮合
物、脂肪族アミン・ポリエチレングリコール縮合物、脂
肪族メルカプタン・ポリエチレングリコール縮合物、ア
ルキルフェノール・ポリエチレングリコール縮合物、ポ
リプロピレングリコール・ポリエチレングリコール縮合
物などで、ＨＬＢが７以上のものが例示される。Fatty acid alkanolamide, fatty acid polyethylene glycol condensate, fatty acid amide/polyethylene glycol condensate, aliphatic alcohol/polyethylene glycol condensate, aliphatic amine/polyethylene glycol condensate, aliphatic mercaptan/polyethylene glycol condensate, alkylphenol/polyethylene glycol condensate Examples include polypropylene glycol/polyethylene glycol condensates, etc., with an HLB of 7 or more.
（作用）
本発明の剥離剤組成物は、集積回路製造工程において変
質硬化したポジ型レジストに対しても。(Function) The stripping agent composition of the present invention is also effective against positive resists that have undergone deterioration and hardening during the integrated circuit manufacturing process.
各成分が単独で示す剥離力からは予想できないような優
れた剥離力を示す。本発明においては、γ−ブチロラク
トン、Ｎ−メチルホルムアミド、Ｎ、Ｎ−ジメチルホル
ムアミド、Ｎ、Ｎ−ジメチルアセトアミドの合計は６０
〜９０容ｔｈｔ％であることがより好ましく、この範囲
においては、境在最も強力な剥離剤といわれている硫酸
と過酸化水素の混合物による洗浄（ビラニア洗＃）にも
匹敵する強力な剥離力が得られる。一方、これらの濃度
の合計が５０容量チを下回る場合には、著しい剥離力の
低下が生じる。It exhibits an excellent peeling force that cannot be predicted from the peeling force exhibited by each component alone. In the present invention, the total amount of γ-butyrolactone, N-methylformamide, N,N-dimethylformamide, and N,N-dimethylacetamide is 60
It is more preferable that the content is ~90% by volume, and within this range, a strong peeling force comparable to that of cleaning with a mixture of sulfuric acid and hydrogen peroxide (Bilania cleaning #), which is said to be the most powerful peeling agent in existence. is obtained. On the other hand, if the sum of these concentrations is less than 50 volumes, the peeling force will be significantly reduced.
さらに１本発明の組成物は、イオン性物質についても優
れ九浴解力を示し、剥離を終えた無機基質の表面全完全
に清浄にすることができる。イオン性物質の溶解力は、
アルコール類ろるいは水の合計が５谷′を憾を下回ると
急激に低下する。Furthermore, the composition of the present invention exhibits excellent nine-bath dissolving power with respect to ionic substances, and can completely clean the entire surface of an inorganic substrate after it has been peeled off. The dissolving power of ionic substances is
When the total amount of alcohol or water falls below 5', the concentration decreases rapidly.
ま几、本発明の組成物は１通常の雀属、特にアルミニウ
ムに対する腐食性がないので、アルミニウム配線を付し
たウェハーのレジスト剥離にも使用できる。However, since the composition of the present invention is not corrosive to common metals, especially aluminum, it can also be used for resist stripping of wafers with aluminum wiring.
さらに、安全性の高いのも本発明の特徴である。Furthermore, high safety is also a feature of the present invention.
本発明の組成物の成分は、比較的毒性が低く、また、引
火点も高いので、取）扱す上の危険が少ない。特に本発
明の組成物が水を含む場合には、より引火しにくいので
好ましい。The components of the compositions of the present invention have relatively low toxicity and high flash points, making them less hazardous to handle. In particular, when the composition of the present invention contains water, it is preferred because it is less likely to catch fire.
集積回路は厳密に管埋され九クリーンルームで製造され
るが、それでも微少な埃が表面ＶＣ付着することは避け
られない。本発明の組成物が０．０１容址憾以上の界面
活性剤を含む場合には、このような埃全表面から取り除
き、剥離剤中に安定に分散できるので、剥離後の無機基
質表面をより清浄にすることが可能である。Although integrated circuits are strictly tube-embedded and manufactured in nine clean rooms, it is still inevitable that a small amount of dust will adhere to the surface of the VC. When the composition of the present invention contains a surfactant of 0.01 volume or more, such dust can be removed from the entire surface and stably dispersed in the stripping agent, so that the surface of the inorganic substrate after stripping can be further improved. It is possible to clean it.
ま友、不発明の組成物は混和性のある第５戚分を含むこ
ともさしつかえない。However, the inventive compositions may also include miscible fifth components.
（実施例）
以下に実施例を挙げ１本発明をさらに具体的に祝明する
。(Example) The present invention will be more specifically celebrated with reference to an example below.
実施例１〜６
市販のポジ型レジスト〔！ＪＩＸ応化工業（株）ＯＦＰ
Ｒ−８００）ｉ５インチのシリコンウェハーに約１．５
μの厚さに塗布し、１４０Ｃで３０分間ベークし、後に
イオン圧入操作を行なって著しく変質硬化したレジスト
を得た。このウェハー全ダイアモンドカッターで１５Ｘ
２５１１１に切断し、サンプルとした。Examples 1 to 6 Commercially available positive resist [! JIX Ohka Kogyo Co., Ltd. OFP
R-800) i5-inch silicon wafer approximately 1.5
The resist was coated to a thickness of μ, baked at 140C for 30 minutes, and then subjected to ion press-in operation to obtain a resist that had undergone significant deterioration and hardening. 15X with this wafer all diamond cutter
It was cut into 25111 pieces and used as a sample.
剥離剤組成物Ｆ１５０ａｔの試験管に１０−入れて。10- into a test tube of stripping agent composition F150at.
１００Ｃのオイルバス中で１５分以上加熱後ｇ験に供し
ｔｏ
剥離性能は加熱さ７’Ｌ友剥離剤組成物にサンプルを投
入し、５分間静置後の剥離状態を次のように目視判定し
、表１にまとめて示し友。表中の記号は下記の意味を示
す。After heating for 15 minutes or more in a 100C oil bath, the peeling performance was determined by adding a sample to the heated 7'L release agent composition and visually judging the peeling condition after leaving it for 5 minutes as follows. The results are summarized in Table 1. The symbols in the table have the following meanings.
Ｏ完全に剥離されている Δ一部にｍｌ庫洩りかめる。O completely peeled off ΔML leaks in some parts.
Ｘはとんど剥離されていない。X is hardly peeled off.
比較例１〜６ 実ｍ列１〜６と同様の方法で剥離性能を評価し。Comparative examples 1 to 6 Peeling performance was evaluated in the same manner as in actual m rows 1 to 6.
結果を表２に示した。The results are shown in Table 2.
表２ 比較例
Ｘｌ ドデシルベンゼンスルホ／酸、フェノール塩素系
溶剤の混合物
Ｘｌ アルキレングリコール、有機アルカリの混合物
実施例７〜１０
５インチのシリコンウェハーにＭ”Ｒ器で５％の食塩本
釣０．２ｖ全均一に哄き付け、１４０にの熱ノ虱乾床器
で３０分間乾燥させた。このウエノ１−を１００Ｃに加
熱し九剥離剤１００Ｔｌｔに５分間浸漬し１次いで、常
温の同じ剥離剤１００ｄでリンスし友後、ＭＩＬ−Ｐ−
２８８０９Ａに準じてイオン性残分の量を評価した。す
なわち、リンス′ｆ！：終えたウェハー’ｉ、７５容量
壬のインブロバノールト２５谷ｍ％の蒸留／脱イオン水
よりなる溶液（抵抗率６ Ｘ １０’Ω・ｍ以上）１０
０−ですすぎ、この溶液の電気伝導率を測定した。抵抗
率が高いことは。Table 2 Comparative Example Xl Mixture of dodecylbenzene sulfo/acid, phenol chlorine solvent It was spread evenly over the entire surface and dried for 30 minutes in a heat drying oven at 140° C. This Ueno 1- was heated to 100 C and immersed in 100 Tlt of a release agent for 5 minutes. After rinsing with friends, MIL-P-
The amount of ionic residue was evaluated according to 28809A. That is, rinse 'f! : Finished wafer'i, 75 volumes of Inbrovanolt 25 m% solution consisting of distilled/deionized water (resistivity 6 x 10' Ω·m or more) 10
After rinsing with 0-, the electrical conductivity of this solution was measured. High resistivity.
イオン性残分が少ないことを意味する。抵抗率の測定結
果を表３に示した。This means that there are few ionic residues. The measurement results of resistivity are shown in Table 3.
比較例７〜８
実施例７〜１０と同様の方法でイオン性残分全評価し、
結果を表４に示した。Comparative Examples 7-8 All ionic residues were evaluated in the same manner as Examples 7-10,
The results are shown in Table 4.
Claims (2)
メチルホルムアミド、Ｎ，Ｎ−ジメチルホルムアミド、
Ｎ，Ｎ−ジメチルアセトアミドより選ばれる１種以上を
５０容量％以上、およびアルコール類、水より選ばれる
１種以上を５〜５０容量％含有してなることを特徴とす
るフォトレジストの剥離剤組成物。(1) γ-butyrolactone, N-
Methylformamide, N,N-dimethylformamide,
A photoresist stripper composition comprising 50% by volume or more of one or more types selected from N,N-dimethylacetamide and 5 to 50% by volume of one or more types selected from alcohols and water. thing.
メチルホルムアミド、Ｎ，Ｎ−ジメチルホルムアミド、
Ｎ，Ｎ−ジメチルアセトアミドより選ばれる１種以上を
５０容量以上、およびアルコール類、水より選ばれる１
種以上を５〜５０容量％、さらに界面活性剤を０．０１
容量％以上含有してなることを特徴とするフォトレジス
トの剥離剤組成物。(2) γ-butyrolactone, N-
Methylformamide, N,N-dimethylformamide,
50 volumes or more of one or more selected from N,N-dimethylacetamide, and one selected from alcohol and water.
5 to 50% by volume of seeds or more, and 0.01% of surfactant
1. A photoresist stripper composition, characterized in that it contains at least % by volume.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10887A JPS63168651A (en) | 1987-01-06 | 1987-01-06 | Stripping agent composition for photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10887A JPS63168651A (en) | 1987-01-06 | 1987-01-06 | Stripping agent composition for photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63168651A true JPS63168651A (en) | 1988-07-12 |
Family
ID=11464879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10887A Pending JPS63168651A (en) | 1987-01-06 | 1987-01-06 | Stripping agent composition for photoresist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63168651A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02131239A (en) * | 1988-11-11 | 1990-05-21 | Nagase Denshi Kagaku Kk | Composition of peeling agent |
| US5268260A (en) * | 1991-10-22 | 1993-12-07 | International Business Machines Corporation | Photoresist develop and strip solvent compositions and method for their use |
| US20100183853A1 (en) * | 2007-06-12 | 2010-07-22 | Takashi Ihara | Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer |
| JP2012522264A (en) * | 2009-03-27 | 2012-09-20 | イーストマン ケミカル カンパニー | Compositions and methods for removing organic matter |
| WO2014002151A1 (en) * | 2012-06-26 | 2014-01-03 | 野村マイクロ・サイエンス株式会社 | Resist stripping agent |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133442A (en) * | 1974-09-13 | 1976-03-22 | Yamaha Motor Co Ltd | JIDONIRINSHANONENRYOTANKUSOCHI |
| JPS5949539A (en) * | 1982-09-02 | 1984-03-22 | ジエイ ティー ベイカー インコーポレーテッド | Stripping composition and method of stripping resist |
| JPS6066424A (en) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-01-06 JP JP10887A patent/JPS63168651A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133442A (en) * | 1974-09-13 | 1976-03-22 | Yamaha Motor Co Ltd | JIDONIRINSHANONENRYOTANKUSOCHI |
| JPS5949539A (en) * | 1982-09-02 | 1984-03-22 | ジエイ ティー ベイカー インコーポレーテッド | Stripping composition and method of stripping resist |
| JPS6066424A (en) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02131239A (en) * | 1988-11-11 | 1990-05-21 | Nagase Denshi Kagaku Kk | Composition of peeling agent |
| US5268260A (en) * | 1991-10-22 | 1993-12-07 | International Business Machines Corporation | Photoresist develop and strip solvent compositions and method for their use |
| US20100183853A1 (en) * | 2007-06-12 | 2010-07-22 | Takashi Ihara | Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer |
| JP2012522264A (en) * | 2009-03-27 | 2012-09-20 | イーストマン ケミカル カンパニー | Compositions and methods for removing organic matter |
| WO2014002151A1 (en) * | 2012-06-26 | 2014-01-03 | 野村マイクロ・サイエンス株式会社 | Resist stripping agent |
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