JPS63158126A - Diamond synthesis - Google Patents

Diamond synthesis

Info

Publication number
JPS63158126A
JPS63158126A JP30610186A JP30610186A JPS63158126A JP S63158126 A JPS63158126 A JP S63158126A JP 30610186 A JP30610186 A JP 30610186A JP 30610186 A JP30610186 A JP 30610186A JP S63158126 A JPS63158126 A JP S63158126A
Authority
JP
Japan
Prior art keywords
convertible
diamond
carbon
plate
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30610186A
Other languages
Japanese (ja)
Other versions
JPH0475766B2 (en
Inventor
Osamu Fukunaga
脩 福長
Kazufumi Nakamura
和史 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP30610186A priority Critical patent/JPS63158126A/en
Publication of JPS63158126A publication Critical patent/JPS63158126A/en
Publication of JPH0475766B2 publication Critical patent/JPH0475766B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/061Graphite
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/0655Diamond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/068Crystal growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a diamond of excellent uniform quality by applying a superhigh pressure to a sample laminated with a convertible graphite plate and a catalytic metal plate through a non-convertible carbon plate, and synthesizing a diamond through direct energization and heating. CONSTITUTION:A sample is prepared by laminating a convertible graphite plate 3 and a catalytic metal plate 2 through a non-convertible carbon plate 4. A superhigh pressure is applied to this sample, and further it is subjected to heating through energization to synthesize a diamond. As non-convertible carbon plate 4, for instance, carbon obtained by thermally treating furan resin at lower than 1,300 deg.C, or carbon obtained by not applying thermal treatment at high than 800 deg.C is used. As catalytic metal, Fe, Ni, Co or alloys of these metals are available. The non-convertible carbon layer does not react with a melted catalytic metal, and does not allow formation of a bridge having a low electric resistance, and also significantly minimizes temperature distribution in the diametral direction.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はダイヤモンドの合成方法、更に詳しくドを合成
する方法の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for synthesizing diamond, and more particularly to an improvement in a method for synthesizing diamond.

従来技術 ダイヤモンドに変換する変換性黒鉛板と触媒金属を積層
した試料にダイヤモンド安定領域の超高圧と温度を加え
ダイヤモンドを合成する方法はよく知られている。
PRIOR ART The method of synthesizing diamond by applying ultra-high pressure and temperature in the diamond stable region to a sample in which a convertible graphite plate and a catalyst metal are layered is well known.

試料を加熱する方法としては、試料と電気的に絶縁され
た管状ヒーターに電流を通ずる間接加熱法と、試料に直
接電流を通じて加熱する直接加熱法とがある。本発明は
後者の直接加熱法に関する。
Methods for heating a sample include an indirect heating method in which a current is passed through a tubular heater that is electrically insulated from the sample, and a direct heating method in which a current is passed directly through the sample to heat it. The present invention relates to the latter direct heating method.

直接加熱法は間接加熱法に比べ、反応室容積を大きくで
きる点で非常に有利である。しかしその反た試料に通電
すると、反応室の中心部に優先的に電流が流れ、また、
黒鉛は高圧下では高温になるにつれて低抵抗になる性質
があるため、昇温に伴ダイヤモンドの生成に伴い溶融触
媒金属が黒鉛中に浸入し、第3図及び第4図に示すよう
な溶融金属とダイヤモンドの混合したプリフジ部へを形
成し、低抵抗部分を作り、従って、ダイヤモンドは中心
部だけに集中的に生成する。
The direct heating method is very advantageous over the indirect heating method in that the volume of the reaction chamber can be increased. However, when electricity is applied to the curved sample, the current flows preferentially to the center of the reaction chamber, and
Graphite has the property of becoming lower in resistance as the temperature increases under high pressure, so as the temperature rises, molten catalyst metal penetrates into graphite as diamonds are formed, resulting in molten metal as shown in Figures 3 and 4. A mixture of diamond and diamond is formed in the pre-fuji part, creating a low resistance part, and therefore, diamond is generated concentrated only in the center part.

また、加熱温度をさらに高温にすると、中心部に黒鉛が
晶出し、その周囲にダイヤモンドが生成する。
Furthermore, when the heating temperature is raised even higher, graphite crystallizes in the center and diamond forms around it.

これらのいずれの方法においても、原料黒鉛からのダイ
ヤモンドへの変換率は低い。
In any of these methods, the conversion rate of raw graphite to diamond is low.

その上帯られるダイヤモンドの外形は不規則となり、良
好な平坦な結晶面で構成された6−8面体のダイヤモン
ドは得難く、仮に一部良質なものが生成されたとしても
その収率は極めて少ない欠点があった。
Moreover, the outer shape of the banded diamonds becomes irregular, making it difficult to obtain hex-octahedral diamonds composed of good flat crystal planes, and even if some good quality diamonds are produced, the yield is extremely low. There were drawbacks.

発明の目的 本発明は従来法の欠点を改善すべくなされたもので、そ
の目的は中央部分及び周辺部にも均一に良質なダイヤモ
ンドを生成するダイヤモンドの合成方法を提供するにあ
る。
OBJECTS OF THE INVENTION The present invention has been made to improve the drawbacks of the conventional methods, and its purpose is to provide a diamond synthesis method that produces diamonds of good quality uniformly in the central and peripheral areas.

発明の構成 本発明者らは前記目的を達成すべく研究の結果、フラン
樹脂を1300℃以下で熱処理して得た炭素、また80
0℃以上の熱処理を施さない炭素は通常のダイヤモンド
合成領域の温度、圧力では全くダイヤモンドを生成せず
、また溶融触媒金属も浸入しない。このような非変換性
炭素を変換性黒鉛板の中間に置いて、超高圧下で加熱し
てダイヤモンドを合成すると、中央部分及び周辺部分も
均一に加熱でき、かつ溶融触媒金属と黒鉛からなるブリ
ッジも生成しないで、良質なダイヤモンドを変換率よく
生成し得られることを究明し得た。この知見に基づいて
本発明を完成した。
Structure of the Invention As a result of research to achieve the above object, the present inventors found that carbon obtained by heat-treating furan resin at 1300°C or less, and 80%
Carbon that has not been heat-treated above 0° C. does not produce diamond at all at the temperature and pressure in the normal diamond synthesis region, and does not penetrate molten catalyst metal. If such non-convertible carbon is placed in the middle of a convertible graphite plate and heated under ultra-high pressure to synthesize diamond, the central and peripheral parts can be heated evenly, and a bridge made of molten catalyst metal and graphite can be synthesized. It has been found that high-quality diamond can be produced at a high conversion rate without producing diamond. The present invention was completed based on this knowledge.

本発明の要旨は ダイヤモンドに変換する変換性黒鉛板と触媒金属板を層
状に積層した試料に超高圧を加え、直接通電して加熱し
ダイヤモンドを合成する方法において、変換性黒鉛板の
中間に非変換性炭素板を置いて合成することを特゛徴と
するダイヤモンドの合成法にある。
The gist of the present invention is to synthesize diamond by applying ultra-high pressure to a sample in which a convertible graphite plate and a catalytic metal plate are laminated in layers to convert into diamond, and directly applying electricity to heat the sample. The method of synthesizing diamond is characterized by placing a convertible carbon plate and synthesizing it.

本発明の方法における試料構成の例を示すと第1図の通
りである。第1図は変換性黒鉛板の中間に非変換性炭素
板を配置した例である。図中1は圧力媒体である食塩円
筒、2は触媒金属板、3は変換性黒鉛板、4は非変換性
炭素板を示す。
An example of the sample structure in the method of the present invention is shown in FIG. 1. FIG. 1 shows an example in which a non-convertible carbon plate is placed between convertible graphite plates. In the figure, 1 is a salt cylinder which is a pressure medium, 2 is a catalyst metal plate, 3 is a convertible graphite plate, and 4 is a non-convertible carbon plate.

非変換性炭素としては、例えばフラン樹脂を1300℃
以下で熱処理して生成した炭素、または800℃以上の
熱処理を施さないカーボンが挙げられる。また触媒金属
としては、Fe、 Ni、 Coまたはそれらの合金が
挙げられる。
As non-convertible carbon, for example, furan resin is heated at 1300°C.
Examples include carbon produced by heat treatment described below, and carbon that is not heat treated at 800° C. or higher. Further, examples of the catalytic metal include Fe, Ni, Co, and alloys thereof.

本発明の方法においては、非変換性炭素層においては、
溶融触媒金属と全く反応しないので、低電気抵抗のブリ
フジ部が形成せず、電流密度が均等化するため径方向の
温度分布が著しく小さくなる。
In the method of the present invention, in the non-convertible carbon layer,
Since it does not react with the molten catalyst metal at all, no bridging portion with low electrical resistance is formed, and the current density is equalized, resulting in a significantly small radial temperature distribution.

実施例1゜ 第1図に示す試料配置とし、変換性黒鉛板(直径8鰭、
厚さ1.5 wm)を用い、非変換性炭素板として、フ
ルフリルアルコールを硝酸触媒で脱水縮合し、800℃
で熱処理して得た炭素を直径811、厚さ0.50に加
工した板を用いた。また触媒金属としてコバール合金(
Ni29%、 Co19%、 Fe52%の合金)板を
使用し、内径25mのベルト型高圧装置で5.8 GP
aで5分間、加熱電力2.2 kWで加熱した。
Example 1 The sample arrangement was as shown in Figure 1, and a convertible graphite plate (8 fins in diameter,
As a non-convertible carbon plate, furfuryl alcohol was dehydrated and condensed using a nitric acid catalyst and heated to 800°C.
A plate made of carbon heat-treated to have a diameter of 811 mm and a thickness of 0.50 mm was used. Kovar alloy (
5.8 GP using a belt-type high-pressure device with an inner diameter of 25 m using an alloy (alloy of 29% Ni, 19% Co, 52% Fe)
Heating was performed for 5 minutes at a heating power of 2.2 kW.

ダイヤモンドの収率は26.5!!iiであった。The diamond yield is 26.5! ! It was ii.

実施例2゜ 実施例1と同様な試料構成で同じ処理圧力を採用し、非
変換性炭素板の種類、加熱電力を変えダイヤモンドを合
成した。その結果は次の通りであった。
Example 2 Diamond was synthesized using the same sample structure and the same processing pressure as in Example 1, but by changing the type of non-convertible carbon plate and heating power. The results were as follows.

カーボン     〃2.2 kW   20.7%カ
ーボン     〃2.4に切   53.0%(註)
(1)フルフリルアルコール由来炭素は実施例1による
ものと同じ。
Carbon 〃2.2 kW 20.7% Carbon 〃Cut to 2.4 53.0% (Note)
(1) Furfuryl alcohol-derived carbon is the same as in Example 1.

(2)カーボンは石油タールピッチ結合剤を用いた低結
晶質カーボンである。
(2) Carbon is low crystalline carbon with petroleum tar pitch binder.

比較例1゜ 黒鉛板を2N厚とし、実施例1と同様な触媒金属板を用
い、非変換性炭素板を置かないで、5.8GPa 、 
2.4 kW、  5分間加熱してダイヤモンドを合成
した。ダイヤモンドの収率は8.2%であった。
Comparative Example 1 The graphite plate was made 2N thick, the same catalyst metal plate as in Example 1 was used, the non-convertible carbon plate was not placed, and the pressure was 5.8 GPa.
Diamond was synthesized by heating at 2.4 kW for 5 minutes. The diamond yield was 8.2%.

発明の効果 本発明の方法によると、中央部分及び周辺部も均一に加
熱され、良質なダイヤモンドが収率よく生成し得られる
優れた効果を奏し得られる。
Effects of the Invention According to the method of the present invention, the center portion and the peripheral portion are also heated uniformly, and high quality diamonds can be produced in a high yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の方法における試料構成図、第2図は従
来法における試料構成図で、第3図及び第4図は従来法
における溶融金属とダイヤモンドの混合したブリッジ部
を示す。 に食塩円筒、 2:触媒金属板、 3:変換性黒鉛板、 4:非変換性炭素板、 5:ブリフジ部分。 第1図   第2図 と 第3図   第4図
FIG. 1 is a diagram showing the structure of a sample in the method of the present invention, FIG. 2 is a diagram showing the structure of a sample in the conventional method, and FIGS. 3 and 4 show a bridge portion where molten metal and diamond are mixed in the conventional method. 2: catalyst metal plate, 3: convertible graphite plate, 4: non-convertible carbon plate, 5: brifuge part. Figure 1 Figure 2 and Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1)、ダイヤモンドに変換する変換性黒鉛板と触媒金属
板を層状に積層した試料に超高圧を加え、直接通電して
加熱しダイヤモンドを合成する方法において、変換性黒
鉛板の中間に非変換性炭素板を置いて合成することを特
徴とするダイヤモンドの合成方法。 2)、触媒金属がFe、Ni、Coまたはそれらの合金
である特許請求の範囲第1項記載のダイヤモンドの合成
方法。 3)、非変換性炭素がフラン樹脂を1300℃以下で熱
処理して生成した炭素、または800℃以上の熱処理を
施さないカーボンである特許請求の範囲第1項記載のダ
イヤモンドの合成方法。
[Claims] 1) In a method of synthesizing diamond by applying ultra-high pressure to a sample in which a convertible graphite plate and a catalytic metal plate are laminated in layers to be converted into diamond, and heating the sample by directly applying electricity, A diamond synthesis method characterized by placing a non-convertible carbon plate in the middle of the diamond. 2) The method for synthesizing diamond according to claim 1, wherein the catalyst metal is Fe, Ni, Co, or an alloy thereof. 3) The diamond synthesis method according to claim 1, wherein the non-convertible carbon is carbon produced by heat-treating furan resin at 1300°C or lower, or carbon that is not heat-treated at 800°C or higher.
JP30610186A 1986-12-22 1986-12-22 Diamond synthesis Granted JPS63158126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30610186A JPS63158126A (en) 1986-12-22 1986-12-22 Diamond synthesis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30610186A JPS63158126A (en) 1986-12-22 1986-12-22 Diamond synthesis

Publications (2)

Publication Number Publication Date
JPS63158126A true JPS63158126A (en) 1988-07-01
JPH0475766B2 JPH0475766B2 (en) 1992-12-01

Family

ID=17953051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30610186A Granted JPS63158126A (en) 1986-12-22 1986-12-22 Diamond synthesis

Country Status (1)

Country Link
JP (1) JPS63158126A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1460040A1 (en) * 2001-12-28 2004-09-22 Toyo Tanso Co., Ltd. Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same
CN104607107A (en) * 2014-05-08 2015-05-13 长春师范大学 High-quality diamond synthesized by utilizing artificial graphite and flake graphite at certain temperature and pressure in one step
CN106076206A (en) * 2016-08-24 2016-11-09 中南钻石有限公司 A kind of twin diamond and manufacture method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1460040A1 (en) * 2001-12-28 2004-09-22 Toyo Tanso Co., Ltd. Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same
EP1460040A4 (en) * 2001-12-28 2005-06-08 Toyo Tanso Co Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same
KR100742059B1 (en) 2001-12-28 2007-07-23 도요탄소 가부시키가이샤 Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same
CN104607107A (en) * 2014-05-08 2015-05-13 长春师范大学 High-quality diamond synthesized by utilizing artificial graphite and flake graphite at certain temperature and pressure in one step
CN106076206A (en) * 2016-08-24 2016-11-09 中南钻石有限公司 A kind of twin diamond and manufacture method thereof
CN106076206B (en) * 2016-08-24 2019-01-15 中南钻石有限公司 A kind of twin diamond and its manufacturing method

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