JPS63152123A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPS63152123A JPS63152123A JP30065286A JP30065286A JPS63152123A JP S63152123 A JPS63152123 A JP S63152123A JP 30065286 A JP30065286 A JP 30065286A JP 30065286 A JP30065286 A JP 30065286A JP S63152123 A JPS63152123 A JP S63152123A
- Authority
- JP
- Japan
- Prior art keywords
- cup
- liquid
- wafer
- housing part
- tightly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 description 14
- 238000007654 immersion Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体製造装置に関し、特にフォトレジスト
膜の塗布や現像装置に適用して好適な半導体製造装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a semiconductor manufacturing apparatus, and particularly to a semiconductor manufacturing apparatus suitable for application to a photoresist film coating and developing device.
（従来の技術）
一般に、半導体製造装置の製造工程において被処理基板
全面が一様に被着される工程、例えばフォトレジスト膜
の現像装置としては、製造工程の無人化、連続処理等の
見地から被処理基板を１枚ずつ処理する枚葉式のスピン
現像装置が使用されている。(Prior Art) Generally, in the manufacturing process of semiconductor manufacturing equipment, the entire surface of the substrate to be processed is coated uniformly, for example, as a developing device for a photoresist film, from the viewpoint of unmanned manufacturing process, continuous processing, etc. Single-wafer type spin developing apparatuses are used that process substrates one by one.
この枚葉式のスピン現像装置においては１通常液吐出ノ
ズルあるいはスプレー等により現像液を基板上に滴下し
て液盛りするのであるが、表面張力の作用により基板上
に盛り得る液量には限度があり、またノズルやスプレー
にて液吐出した場合、基板上での液むらや吐出液の基板
への衝撃は防ぎ得ない。In this single-wafer type spin developing device, the developer is dripped onto the substrate using a normal liquid discharge nozzle or a sprayer, but there is a limit to the amount of liquid that can be deposited on the substrate due to surface tension. Furthermore, when liquid is discharged with a nozzle or spray, it is impossible to prevent liquid unevenness on the substrate and impact of the discharged liquid on the substrate.
また、近年使用されるようになった現像液として、解像
度を向上させるために界面活性剤を添加したものや表面
張力の低い液が使用される傾向があり、基板上に表面張
力の作用のみにより必要量の現像液を盛ることが困難と
なったため、浸漬式の現像装置が望まれていた。Additionally, developing solutions that have come into use in recent years tend to contain surfactants or solutions with low surface tension in order to improve resolution. Since it has become difficult to fill up the required amount of developer, an immersion type developing device has been desired.
上記の点を考慮した装置として、例えば第５図に示すよ
うに実開昭６０−５２６２２号公報にて開示された装置
がある。As an example of a device that takes the above points into consideration, there is a device disclosed in Japanese Utility Model Application Publication No. 60-52622, as shown in FIG. 5, for example.
第５図において、３はウェハホルダ、４はこのウェハホ
ルダの内面に設けられた段部、５はウェハ、６は現像液
であり、ウェハ５の下面周辺部と段部４を液密に接触さ
せウェハ５上に現像液６を盛って、浸漬処理を行なうも
のである。In FIG. 5, 3 is a wafer holder, 4 is a step provided on the inner surface of the wafer holder, 5 is a wafer, and 6 is a developing solution. A developing solution 6 is placed on top of the wafer 5, and immersion processing is performed.
（発明が解決しようとする問題点）
しかし、前記の開示された装置においては、ウェハホル
ダ３の内側に設けられた段部４に現像液６を盛るため、
現像後ウェハ５を高速回転しウェハ５の上面に図示しな
いリンス液を吹きつけてウェハ５を洗浄する際に、飛び
敗ったリンス液等が段部４に付着し現像液６と混ざり、
現像むらが生じやすい。(Problems to be Solved by the Invention) However, in the disclosed apparatus, since the developer 6 is filled in the stepped portion 4 provided inside the wafer holder 3,
When cleaning the wafer 5 by rotating the wafer 5 at high speed after development and spraying a rinsing liquid (not shown) onto the upper surface of the wafer 5, the rinsing liquid and the like that fly off adhere to the stepped portion 4 and mix with the developing liquid 6.
Uneven development is likely to occur.
また、現像終了後の現像液６の排液手段として、ウェハ
５をウェハホルダ３の段部４から浮かすことにより現像
液６をウェハホルダ３内周部に流し排液孔７から排液す
る構成であるため、現像液６がウェハ５周辺裏面部に付
着残存しやすく、かつウェハチャツク２下部より浸透し
筒状部８を通りモータ９にかかる懸念があるのは避は難
い。In addition, as a means for draining the developer 6 after the development is completed, the wafer 5 is floated from the stepped portion 4 of the wafer holder 3 to cause the developer 6 to flow to the inner circumference of the wafer holder 3 and drain from the drain hole 7. Therefore, it is unavoidable that the developer 6 tends to adhere to and remain on the back surface of the wafer 5, and that it permeates from the lower part of the wafer chuck 2, passes through the cylindrical portion 8, and may be applied to the motor 9.
さらに、排液孔７はウェハホルダ３内部に設けられた構
成のため構造上の制約を受け、排液孔７の面積を大きく
とれず排出速度が遅いという問題がある。Furthermore, since the liquid drain hole 7 is provided inside the wafer holder 3, it is subject to structural limitations, and there is a problem that the area of the liquid drain hole 7 cannot be made large, resulting in a slow discharge speed.
本発明は前記のような事情に対処してなされたもので、
被処理基板がクリーンで処理むらが少なく、信頼性およ
びスループットが高い、枚葉処理に適した浸漬式の半導
体製造装置を提供しようとするものである。The present invention was made in response to the above-mentioned circumstances.
It is an object of the present invention to provide an immersion type semiconductor manufacturing apparatus suitable for single-wafer processing, in which the substrate to be processed is clean, there is little processing unevenness, and reliability and throughput are high.
（問題点を解決するための手段）
すなわち本発明は、被処理基板の下面周辺部と液密に接
触する第１のカップと、この第１のカップと液密に接触
し、側壁を構成する第２のカップとを備え、前記第１の
カップと前記第２のカップとを相対的に上下動可能に構
成することにより、前記第１のカップおよび第２のカッ
プを液密に接触した状態のカップに処理液を溜めて処理
する手段を有することを特徴とする。(Means for Solving the Problems) That is, the present invention includes a first cup that is in liquid-tight contact with the peripheral portion of the lower surface of a substrate to be processed, and a side wall that is in liquid-tight contact with the first cup. a second cup, and the first cup and the second cup are configured to be relatively movable up and down, so that the first cup and the second cup are in liquid-tight contact with each other. It is characterized by having a means for storing and processing a processing liquid in the cup.
（作 用）
本発明の半導体製造装置では、被処理基板と第１のカッ
プ、第１のカップと第２のカップをそれぞれ液密に接触
させたとき容器の働きをし、被処理基板と第１のカップ
が容器の底部、第２のカップが容器の側壁の働きをする
。そのため被処理基板上にこの基板が浸漬するのに充分
な量の処理液を盛ることができるので、処理むらや吐出
液の被処理基板への衝撃のない浸漬式の処理ができる。(Function) In the semiconductor manufacturing apparatus of the present invention, when the substrate to be processed and the first cup are in liquid-tight contact with each other, and the first cup and the second cup are in liquid-tight contact with each other, they function as a container, and the substrate to be processed and the One cup serves as the bottom of the container and the second cup serves as the side wall of the container. Therefore, a sufficient amount of processing liquid can be placed on the substrate to be processed so that the substrate is immersed, so that immersion-type processing can be performed without uneven processing or impact of the discharged liquid on the substrate.
また、第１のカップと第２のカップとを相対的に上下動
することにより、両カップ間に広い面積の空間を確保で
きるため排液の排出処理を迅速に行うことができると共
に、この空間に被処理基板から外に向う排気の流れを形
成することにより被処理基板から外に向う排気の流れを
形成することにより被処理基板にリンス液等のミストが
付着するのを防止でき、クリーンでスループットの高い
処理が可能となる。In addition, by moving the first cup and the second cup relatively up and down, a wide area of space can be secured between the two cups, so that the drainage process can be carried out quickly, and this space By forming an exhaust flow outward from the substrate to be processed, it is possible to prevent mist such as rinsing liquid from adhering to the substrate to be processed, resulting in a clean and clean environment. Processing with high throughput is possible.
（実施例）
以下１本発明の半導体製造装置を現像装置に適用した実
施例を図面を参照して説明する。(Example) Hereinafter, an example in which the semiconductor manufacturing apparatus of the present invention is applied to a developing device will be described with reference to the drawings.
収容部鉦は下カップ１４と上カップ１５とからなり、こ
の収容部Ｕ内には例えば真空チャック等によリウエハ５
を吸着保持するウェハチャック１２が設けられており、
このウェハチャック１２は固定部３１に取付固定された
モータ３０によって回転自在しこ取着されている。The housing portion U is composed of a lower cup 14 and an upper cup 15, and a wafer 5 is placed inside this housing portion U using a vacuum chuck or the like.
A wafer chuck 12 for suctioning and holding the wafer is provided.
The wafer chuck 12 is rotatably mounted on a fixed portion 31 by a motor 30.
また、上記収容部Ｈの外部にはこの収容部Ｕを昇降制御
する昇降駆動部用が設けられている。この昇降駆動部用
は、固定部３１に取付固定され収容部Ｕを昇降するため
の主エアシリンダ３２と、この主エアシリンダ３２の主
ロッド３３の先端に取付けられ、収容部Ｕを昇降する昇
降金具３４と、この昇降金具３４に取付固定され下カッ
プ１４を昇降する副エアシリンダ３５とから構成されて
いる。Furthermore, an elevating drive unit for controlling the elevating and lowering of the accommodating portion U is provided outside the accommodating portion H. A main air cylinder 32 for raising and lowering the housing part U is attached and fixed to a fixed part 31, and a lifting and lowering part for this lifting drive part is attached to the tip of a main rod 33 of this main air cylinder 32 and is used for raising and lowering the housing part U. It is composed of a metal fitting 34 and a sub-air cylinder 35 that is attached and fixed to the elevating metal fitting 34 and raises and lowers the lower cup 14.
一方、上記下カップ１４は上記ウェハチャック１２の周
囲を取り囲むドーナツ状に構成されており、この下カッ
プ１４の内側上部にはウェハ５の裏面を洗浄するための
裏面洗浄ノズル２６が設けられ、洗浄液がウェハ５の外
周方向に流出するように構成之れ、洗浄液流入口２５に
内通している。On the other hand, the lower cup 14 has a donut shape that surrounds the wafer chuck 12, and a back surface cleaning nozzle 26 for cleaning the back surface of the wafer 5 is provided at the upper inside of the lower cup 14, and a cleaning liquid The cleaning liquid inlet 25 is configured to flow out toward the outer circumference of the wafer 5 and passes through the cleaning liquid inlet 25 .
さらに、下カップ１４の上面にはウェハ５の下面周辺部
を真空吸着することにより液密にシールする下シール部
１３例えばシリコンゴムが、下バツクアツプリング１６
によって固定されている。そして。Further, on the upper surface of the lower cup 14, a lower seal portion 13, for example, silicone rubber, seals the peripheral portion of the lower surface of the wafer 5 in a liquid-tight manner by vacuum suction, and a lower back up spring 16 is attached to the upper surface of the lower cup 14.
Fixed by and.
この下シール部１３と下バツクアツプリング１６には真
空吸引のための吸引口が設けられており、真空吸引孔２
０と共に真空吸引接続口１７に連通し、真空吸引可能に
構成されている。This lower seal portion 13 and the lower back up spring 16 are provided with a suction port for vacuum suction, and the vacuum suction hole 2
0 and a vacuum suction connection port 17, and is configured to be capable of vacuum suction.
下カップ１４の下面内部には、現像液６の排液が下カッ
プ１４の下面内側に流入するのを防ぐため仕切板２９が
環状に設けられ、下カップ１４の下面外側には現像液６
を排液するための排液管２８が設けられている。また、
仕切板２９の内側には、気体を排出する排気管２４が設
けられ図示しない排気装置に接続されている。A partition plate 29 is provided in an annular shape inside the lower surface of the lower cup 14 to prevent the drained liquid of the developer 6 from flowing into the inner side of the lower surface of the lower cup 14.
A drain pipe 28 is provided for draining the liquid. Also,
An exhaust pipe 24 for discharging gas is provided inside the partition plate 29 and is connected to an exhaust device (not shown).
下カップ１４の上方には、この下カップ１４を取り囲む
ように上カップ１５が配置されており、この上カップ１
５の内側には浸漬用現像液６を供給するための多数の液
吐出口２１と、浸漬処理後、現像液を強制的に排液する
ための多数の吸引排液口２７と。An upper cup 15 is arranged above the lower cup 14 so as to surround the lower cup 14.
Inside the housing 5 are a large number of liquid discharge ports 21 for supplying the developer 6 for immersion, and a large number of suction and drain ports 27 for forcibly draining the developer after the immersion process.
現像液６を一定の温度に保つための温水等を循環する環
状の温潤水流路２２とが設けられている。An annular warm water flow path 22 is provided for circulating hot water or the like to keep the developer 6 at a constant temperature.
また、上カップ１５の内側下部には、下カップ１４と真
空吸引孔２０により液密にシールする上シール部１８が
環状に設けられ、この上シール部１８は上バツクアップ
リング１９により上カップ１５に固定されている。Further, an annular upper seal part 18 is provided at the inner lower part of the upper cup 15 to form a liquid-tight seal between the lower cup 14 and the vacuum suction hole 20. is fixed.
さらに、ウェハチャック１２の下には、洗浄液等の付着
した下カップ１４を迅速に乾燥するために多数の乾燥ノ
ズル３８が設けられており、この乾燥ノズル３８から吹
出した気体が下ガップ１４の上面に吹きつけられるよう
構成されている。Further, a large number of drying nozzles 38 are provided below the wafer chuck 12 in order to quickly dry the lower cup 14 to which cleaning liquid or the like has adhered. It is designed to be sprayed on.
そして上記構成の現像装置では次のようにして浸漬現像
処理を行う。In the developing device having the above configuration, immersion development processing is performed as follows.
先ず、第３図に示すように図示しない搬送装置によりウ
ェハチャック１２にウェハ５を載置し吸着保持する。こ
のとき、下カップ１４と上カップ１５は最下位の位置に
あり、通常この状態に位置している。First, as shown in FIG. 3, the wafer 5 is placed on the wafer chuck 12 by a transport device (not shown) and held by suction. At this time, the lower cup 14 and the upper cup 15 are at the lowest position, and are normally located in this state.
次に第４図に示すように、主エアシリンダ３２が作動し
て主ロッド３３が伸び、この主ロッド３３に取付けられ
た昇降金具３４が上昇し上カップ１５を最上位に上昇さ
せると同時に、下カップ１４を昇降金具３４に取付固定
された作動していない副エアシリンダ３５により、下カ
ップ１４の下シール部１３がウェハ５の裏面より僅かに
低い位置になるまで上昇させる。Next, as shown in FIG. 4, the main air cylinder 32 is actuated to extend the main rod 33, and the elevating fitting 34 attached to the main rod 33 rises to raise the upper cup 15 to the highest position. The lower cup 14 is raised by the inoperative sub-air cylinder 35 attached and fixed to the lifting fitting 34 until the lower seal part 13 of the lower cup 14 is at a position slightly lower than the back surface of the wafer 5.
そして、第１図に示すように副エアシリンダ３５が作動
して副ロッド３６が伸張し下カップ１４が上昇する。次
に第２図に示すように、下カップ１４が上昇すると下シ
ール部１３がウェハ５の裏面に当接しウェハ５を真空吸
引してウェハ５と下シール部１３を液密にシールすると
共に、ウェハ５をウェハチャック１２から持ち上げる。Then, as shown in FIG. 1, the sub air cylinder 35 is activated, the sub rod 36 is extended, and the lower cup 14 is raised. Next, as shown in FIG. 2, when the lower cup 14 rises, the lower seal part 13 comes into contact with the back surface of the wafer 5, vacuum-suctions the wafer 5, and seals the wafer 5 and the lower seal part 13 liquid-tightly. Lift the wafer 5 from the wafer chuck 12.
さらに下カップ１４が上昇すると、真空吸引孔２０の周
辺部と上シール部１８が当接し真空吸引により上シール
部１８と下カップ１４とを液密にシールする。When the lower cup 14 further rises, the periphery of the vacuum suction hole 20 comes into contact with the upper seal part 18, and the upper seal part 18 and the lower cup 14 are sealed liquid-tightly by vacuum suction.
上記のようにウェハ５と下カップ１４．下カップ１４と
上カップ１５を液密にシールした状態に保ち、液吐出口
２１から温調水等により保温された現像液６を、上カッ
プ１５の内側全周より均一に大量に吐出させ、第１図に
示すようにウェハ６を浸漬現像する。Wafer 5 and lower cup 14 as described above. The lower cup 14 and the upper cup 15 are kept in a liquid-tightly sealed state, and a large amount of the developer 6 kept warm by temperature-controlled water or the like is discharged uniformly from the liquid discharge port 21 from the entire inner circumference of the upper cup 15, The wafer 6 is immersed and developed as shown in FIG.
所定時間浸漬現像後、副エアシリンダ３５の作動を停止
し副ロッド３６が縮少すると下カップ１４が下降し、上
シール部１８で液密にシールされていた上カップ１５と
下カップ１４を切り離し、現像液６を自然落下により下
カップ１４の内側外周部に向って流し排液管２８により
排液する。After immersion development for a predetermined period of time, the operation of the sub air cylinder 35 is stopped and the sub rod 36 is retracted, and the lower cup 14 is lowered, separating the upper cup 15 and the lower cup 14, which were liquid-tightly sealed at the upper seal portion 18. , the developer 6 flows by gravity toward the inner outer periphery of the lower cup 14 and is drained through the drain pipe 28.
この場合、上カップ１５と下カツプ１４間には排液に際
し充分な開口面積が得られるので排液速度を著しく速く
でき、また排液の落下する方向が下カップ１４の外周部
に向うものであるためモータ３０側に流れてしまう可能
性はない。In this case, a sufficient opening area is obtained between the upper cup 15 and the lower cup 14 for draining the liquid, so the draining speed can be significantly increased, and the direction in which the drained liquid falls is directed toward the outer periphery of the lower cup 14. Therefore, there is no possibility that it will flow to the motor 30 side.
さらに副ロッド３６が縮少し下カップ１４が下降すると
、第４図に示すように、ウェハ５はウェハチャック１２
に載置され、また下シール部■３により液密にシールさ
れていたウェハ５と下カップ１４は切り離される。When the sub rod 36 is further retracted and the lower cup 14 is lowered, the wafer 5 is transferred to the wafer chuck 12 as shown in FIG.
The wafer 5 and the lower cup 14, which were placed on the wafer 5 and sealed liquid-tightly by the lower seal part 3, are separated.
この状態で、モータ３０を作動させウェハ５を高速回転
することによりウェハ５上に残存する現像液６を振り切
ると同時に、図示しないリンスノズルよりリンス液をウ
ェハ５上に滴下し、現像停止およびウェハ５表面のリン
スを行う。In this state, the motor 30 is operated to rotate the wafer 5 at high speed to shake off the developer 6 remaining on the wafer 5, and at the same time, the rinsing liquid is dripped onto the wafer 5 from a rinse nozzle (not shown) to stop development and remove the wafer. 5. Rinse the surface.
また、洗浄液流入口２５から洗浄液を流入し、ＩＡ面洗
浄ノズル２６からウェハ５の外周部に向けて洗浄液を流
出させ、ウェハ５の裏面に付着した現像液等を洗浄する
と共に、排気管２４から排気を行う。In addition, the cleaning liquid flows in from the cleaning liquid inlet 25 and flows out from the IA surface cleaning nozzle 26 toward the outer circumference of the wafer 5 to clean the developer and the like attached to the back surface of the wafer 5. Perform exhaust.
なお、ウェハ５の回転により振り切られる現像液６やリ
ンス液、裏面洗浄液等は、上カップ１５の内側に設けら
れた傾斜部２３に当り下方へと落ち、また排気管２４に
より排気しているので上カップ１５と下カップ１４との
開口部分には、上方から下方へ向うＪト気流２４ａが形
成されるため、リンス液等の飛散ミストがウェハ５方面
へ向うことを防止することができる。Note that the developer 6, rinsing liquid, backside cleaning liquid, etc. that are shaken off by the rotation of the wafer 5 hit the inclined part 23 provided inside the upper cup 15 and fall downward, and are also exhausted through the exhaust pipe 24. Since an air flow 24a directed from above to below is formed in the openings of the upper cup 15 and the lower cup 14, it is possible to prevent the scattered mist of the rinsing liquid or the like from heading toward the wafer 5.
上記のリンスおよび裏面洗浄が終了後も一定時間つエバ
５を回転しウェハ５を乾燥させる。Even after the above-mentioned rinsing and backside cleaning are completed, the evaporator 5 is rotated for a certain period of time to dry the wafer 5.
乾燥終了後、主エアシリンダ３２の作動を停止し主ロッ
ド３３を縮少させ収容部双を下降させ第３図に示すよう
に最初の位置にする。After drying is completed, the operation of the main air cylinder 32 is stopped, the main rod 33 is retracted, and the housing portions are lowered to the initial position as shown in FIG.
そして排気流２４ａを利用して、下カップ１４の上面等
に付着したリンス液等を自然乾燥させる。Then, using the exhaust flow 24a, the rinse liquid and the like adhering to the upper surface of the lower cup 14 are naturally dried.
この実施例では、下カップ１４と上カップ１５を液密に
シールする上シール部１８を上カップＩ５に設けたが、
この上シール部１８は下カップ１４に設は上カップ１５
面を平面で構成してもよい。ただし、下カップ１４の排
液が流れる部分に上シール部１８を設けるので排液性が
低下するのは避は難く、この実施例のように上カップ１
５に設けるのが望ましい。In this embodiment, the upper cup I5 is provided with an upper seal portion 18 for liquid-tightly sealing the lower cup 14 and the upper cup 15.
This upper seal portion 18 is attached to the lower cup 14 and is attached to the upper cup 15.
The surface may be a flat surface. However, since the upper seal part 18 is provided in the part of the lower cup 14 through which the drained liquid flows, it is difficult to avoid a decrease in the liquid drainage performance.
It is desirable to provide this at 5.
収容部Ｕを昇降する手段についても、この実施例のエア
シリンダ使用に限定されるものではなく。The means for raising and lowering the accommodation portion U is not limited to the use of the air cylinder of this embodiment.
昇降できる機構のものであれば、他のどのような手段を
用いても構わない。Any other means may be used as long as it has a mechanism that allows it to be raised and lowered.
また、現像液６の排液方法としては、前記の自然落下に
よるものだけではなく、例えば上カップ１５の吸引排液
口２７より現像終了後に強制的に排液してもよい。この
方法によれば、現像液６をほぼ全て回収することが可能
であり、リンス液の混入かない純粋な現像液６を回収再
利用することもできる。Further, the method for draining the developing solution 6 is not limited to the above-mentioned method of natural falling, but may also be forcibly drained from the suction/draining port 27 of the upper cup 15 after completion of development. According to this method, it is possible to recover almost all of the developer 6, and it is also possible to recover and reuse the pure developer 6 that is not contaminated with a rinse solution.
さらに、下カップ１４を排気流２４ａを利用して自然乾
燥させるに際し、乾燥ノズル３８を併用し例えば窒素（
Ｎ２）等の気体を矢印３８ａで示すように下カップ１４
上面方向へ強制的に流出させることにより、より速やか
に下カップ１４を乾燥させることができる。Furthermore, when naturally drying the lower cup 14 using the exhaust flow 24a, the drying nozzle 38 is also used, for example, with nitrogen (
A gas such as N2) is supplied to the lower cup 14 as shown by an arrow 38a.
By forcing the water to flow toward the upper surface, the lower cup 14 can be dried more quickly.
なお、現像速度は温度依存性が高く、現像中での温度変
化を防ぐのに、この実施例のように熱容量が大きく現像
液６に対する熱伝導を支配する上カップ１５を利用すれ
ば、温調の効果は向上する。Note that the development speed is highly temperature dependent, and to prevent temperature changes during development, if the upper cup 15, which has a large heat capacity and controls heat conduction to the developer 6, is used as in this embodiment, the temperature can be controlled. The effectiveness of this will be improved.
また、上カップ１５と下カップ１４とを上シール部１８
を吸引することにより液密に接触させているが、上カッ
プ１５の重量が充分な場合には、上シール部１８を例え
ばＯリングとし吸引せずに液密に接触させることも可能
である。Further, the upper cup 15 and the lower cup 14 are connected to the upper seal portion 18.
However, if the weight of the upper cup 15 is sufficient, it is also possible to make the upper seal part 18, for example, an O-ring and bring the upper seal into liquid-tight contact without suction.
上記実施例では現像装置に適用した例について説明した
が、被処理基板の一方全面が一様に被着される手段であ
れば何れにも適用でき１例えばコーターすなわち、レジ
スト塗布装置に適用してもよい。In the above embodiment, an example was explained in which it was applied to a developing device, but it can be applied to any means that uniformly coats one entire surface of a substrate to be processed. Good too.
上述のように本発明の製造装置によれば、被処理基板が
クリーンで、処理むらがなく、信頼性およびスループッ
トの優れた処理を行なうことができる。As described above, according to the manufacturing apparatus of the present invention, the substrate to be processed is clean, there is no processing unevenness, and processing can be performed with excellent reliability and throughput.
第１図は本発明の製造装置の一実施例を示す構成図、第
２図は第１図のＡの部分拡大説明図、第３図は第１図の
原位置状態の説明図、第４図は第１図の動作途中を示す
説明図、第５図は従来の半導体装置を示す構成図。
５・・・ウェハ ６・・・現像液１２・
・・ウェハチャック １３・・・下シール部１４
・・・下カップ １５・・・上カップ１６
・・・下バツクアツプリング １７・・・真空吸引接続
口１８・・・上シール部 １９・・上バツク
アップリング２０・・・真空吸引孔 ２１・
・・液吐出口２２・・・温調水流路 ２３・
・・傾斜部２４・・・排気管 ２５・・
・洗浄液流入口２６・・・裏面洗浄ノズル ２７
・・・吸引排液口２８・・・排液管 ２
９・・・仕切板３０・・・モータ ３１
・・・固定部３２・・主エアシリンダ ３３・・
・主ロッド３４・・・昇降金具 ３５・・
・副エアシリンダ３６・・・副ロッド 昇
・・・収容部３８・・・乾燥ノズル 洩・・
・昇降駆動部特許出願人 東京エレクトロン株式会社
↓
第２図Fig. 1 is a configuration diagram showing one embodiment of the manufacturing apparatus of the present invention, Fig. 2 is a partially enlarged explanatory view of A in Fig. 1, Fig. 3 is an explanatory view of the original position state of Fig. 1, and Fig. 4 FIG. 5 is an explanatory diagram showing the middle of the operation of FIG. 1, and FIG. 5 is a configuration diagram showing a conventional semiconductor device. 5... Wafer 6... Developer 12.
...Wafer chuck 13...Lower seal part 14
...Lower cup 15...Upper cup 16
...Lower back up ring 17...Vacuum suction connection port 18...Upper seal portion 19..Upper back up ring 20...Vacuum suction hole 21.
...Liquid discharge port 22...Temperature control water flow path 23.
... Inclined part 24 ... Exhaust pipe 25 ...
・Cleaning liquid inlet 26...back side cleaning nozzle 27
...Suction drain port 28...Drain pipe 2
9... Partition plate 30... Motor 31
...Fixed part 32...Main air cylinder 33...
・Main rod 34...Elevating metal fittings 35...
・Sub-air cylinder 36...Sub-rod elevation...Accommodation section 38...Drying nozzle leakage...
・Lifting drive unit patent applicant Tokyo Electron Ltd. ↓ Figure 2
Claims (1)
と、この第１のカップと液密に接触し、側壁を構成する
第２のカップとを備え、前記第１のカップと前記第２の
カップとを相対的に上下動可能に構成することにより、
前記第１のカップおよび第２のカップを液密に接触した
状態のカップに処理液を溜めて処理する手段を有するこ
とを特徴とする半導体製造装置。a first cup that is in liquid-tight contact with the lower peripheral portion of the substrate to be processed; a second cup that is in liquid-tight contact with the first cup and forms a side wall; By configuring the second cup to be movable up and down relative to the second cup,
A semiconductor manufacturing apparatus comprising means for storing a processing liquid in a cup in which the first cup and the second cup are in liquid-tight contact with each other for processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30065286A JPS63152123A (en) | 1986-12-17 | 1986-12-17 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30065286A JPS63152123A (en) | 1986-12-17 | 1986-12-17 | Semiconductor manufacturing device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35543792A Division JP2520833B2 (en) | 1992-12-21 | 1992-12-21 | Immersion type liquid treatment device |
| JP35543692A Division JPH0670962B2 (en) | 1992-12-21 | 1992-12-21 | Immersion type liquid treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63152123A true JPS63152123A (en) | 1988-06-24 |
Family
ID=17887436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30065286A Pending JPS63152123A (en) | 1986-12-17 | 1986-12-17 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63152123A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290844U (en) * | 1988-12-30 | 1990-07-18 | ||
| JPH02194618A (en) * | 1989-01-24 | 1990-08-01 | Tokyo Electron Ltd | Processing apparatus |
| JPH02252238A (en) * | 1989-03-25 | 1990-10-11 | Tokyo Electron Ltd | Cleaning equipment for substrate |
| JPH0374837A (en) * | 1989-08-17 | 1991-03-29 | Tokyo Electron Ltd | Development of body to be processed |
| JPH04155915A (en) * | 1990-10-19 | 1992-05-28 | Fujitsu Ltd | Development of processed substrate |
| JP2014501043A (en) * | 2010-11-30 | 2014-01-16 | シン マテリアルズ アクチェンゲゼルシャフト | Wafer or die processing method |
-
1986
- 1986-12-17 JP JP30065286A patent/JPS63152123A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290844U (en) * | 1988-12-30 | 1990-07-18 | ||
| JPH058606Y2 (en) * | 1988-12-30 | 1993-03-03 | ||
| JPH02194618A (en) * | 1989-01-24 | 1990-08-01 | Tokyo Electron Ltd | Processing apparatus |
| JPH02252238A (en) * | 1989-03-25 | 1990-10-11 | Tokyo Electron Ltd | Cleaning equipment for substrate |
| JPH0374837A (en) * | 1989-08-17 | 1991-03-29 | Tokyo Electron Ltd | Development of body to be processed |
| JPH04155915A (en) * | 1990-10-19 | 1992-05-28 | Fujitsu Ltd | Development of processed substrate |
| JP2014501043A (en) * | 2010-11-30 | 2014-01-16 | シン マテリアルズ アクチェンゲゼルシャフト | Wafer or die processing method |
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