JPS6315172A - Current detector - Google Patents
Current detectorInfo
- Publication number
- JPS6315172A JPS6315172A JP61157853A JP15785386A JPS6315172A JP S6315172 A JPS6315172 A JP S6315172A JP 61157853 A JP61157853 A JP 61157853A JP 15785386 A JP15785386 A JP 15785386A JP S6315172 A JPS6315172 A JP S6315172A
- Authority
- JP
- Japan
- Prior art keywords
- hall element
- voltage
- current
- current detector
- magnetic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ホール素子等の磁電変換素子を用いた電流検
出器、特に過電圧耐量を改善し得るようにした電流検出
器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a current detector using a magnetoelectric transducer such as a Hall element, and particularly to a current detector capable of improving overvoltage resistance.
（従来の技術〕
一般にホール素子等の磁電変換素子を用いる電流検出器
は、第３図に示すように磁気コア１及びギャップ２より
成り、検出すべき電流が流れる電流導体３の囲りに生ず
る磁束をピックアップする磁気回路ＭＣと、前記ギャッ
プ２内に配置され磁気回路ＭＣ内を通る磁束の強さに比
例した電圧を発生する１１電変換素子４とで構成されて
おり、導体３に流れる電流の値を電圧値に変換するよう
にしている。この磁電変換素子４（以下ホール素子と称
する）の一般的な構成及び動作原理は第４図に示すよう
に、ゲルマニウム、シリコン、ガリウム砒素等の比較的
電子移動度の高い半導体材料から成るホール素子片４と
、これに設けられた電流端子５−５′と、電圧端子６−
６′ とを具え、電流端子５−５′に電流１ｃを流し、
この電流１ｃにより発生する磁束Ｂをホール素子片４に
その主面に対し垂直に加えることによって電圧端子６−
６′間にホール電圧Ｖｈを発生させるようにしたもので
あり、これらパラメータ間には次式で示す関係が成立す
る。(Prior Art) Generally, a current detector using a magnetoelectric conversion element such as a Hall element is composed of a magnetic core 1 and a gap 2, as shown in FIG. It is composed of a magnetic circuit MC that picks up the magnetic flux, and an electric conversion element 4 that is placed in the gap 2 and generates a voltage proportional to the strength of the magnetic flux passing through the magnetic circuit MC, and the current that flows through the conductor 3. The general structure and operating principle of this magnetoelectric conversion element 4 (hereinafter referred to as a Hall element) are as shown in Fig. 4. A Hall element piece 4 made of a semiconductor material with relatively high electron mobility, a current terminal 5-5' provided thereon, and a voltage terminal 6-
6', a current 1c is passed through the current terminal 5-5',
By applying the magnetic flux B generated by this current 1c to the Hall element piece 4 perpendicularly to its main surface, the voltage terminal 6-
The Hall voltage Vh is generated between 6' and 6', and the relationship expressed by the following equation holds between these parameters.
Ｖｈ −３ｘ Ｉｃ ＸＫ＋Ｖｏ −（１）ここ
にＶｏは磁束Ｂが零の場合のホール電圧Ｖｈであり、Ｋ
はホール素子の材料、構造等によって定まる常数である
。この常数には、ホール素子片４の電子移動度ρ、形状
その他の常数をｍ。Vh −3x Ic XK+Vo −(1) Here, Vo is the Hall voltage Vh when the magnetic flux B is zero, and K
is a constant determined by the material, structure, etc. of the Hall element. This constant includes the electron mobility ρ, shape, and other constants of the Hall element piece 4.
厚さを（とすれば次式から算出することができる。If the thickness is (, then it can be calculated from the following formula.
Ｋ＝ （０１／ｌ ）ρ ・・・（２）式（
１）及び（２）から明らかなようにホール素子の出力電
圧はホール素子片４の厚さｔに反比例する。これがため
、実用に供し得るホール素子の構造はその厚さをできる
だけ小さくするのが好適である。かかホール素子の厚さ
は現在の半導体製造における拡散技術を用いる場合には
極めて１くすることができる。K= (01/l)ρ...Equation (2) (
As is clear from 1) and (2), the output voltage of the Hall element is inversely proportional to the thickness t of the Hall element piece 4. For this reason, it is preferable that the thickness of a practically usable Hall element be as small as possible. The thickness of the Hall element can be made very small using diffusion techniques in modern semiconductor manufacturing.
即ち第５図に示すように拡散技術によりホール素子を製
造する場合シリコン、ガリウム砒素等より成る半導体基
板７（ホール素子チップとも称される）を用い、その厚
さをほぼ２００μ前後とする。That is, as shown in FIG. 5, when a Hall element is manufactured by diffusion technology, a semiconductor substrate 7 (also referred to as a Hall element chip) made of silicon, gallium arsenide, etc. is used, and its thickness is approximately 200 μm.
この半導体基板７に第４図に示すようなホール素子片４
を拡散技術を用いて形成する。このホール素子片４の部
分の厚さは極めて薄く、約１０数μ程度とする。かよう
に厚さが極めて薄いため、ホール素子片４から電極を直
接取出すのは困難であり、従って電極接続部８．８’
、９及び９′を半導体基板７に蒸着及び拡散により形成
し、電極接続部８及び８′を電流端子５及び５′に夫々
接続し、電極接続部９及び９′を電圧端子６及び６′に
夫々接続しくｑるようにする。かようにして製造したホ
ール素子の等価回路を第６図に示す。On this semiconductor substrate 7, a Hall element piece 4 as shown in FIG.
is formed using diffusion technology. The thickness of this Hall element piece 4 is extremely thin, about 10-odd microns. Since the thickness is extremely thin, it is difficult to take out the electrode directly from the Hall element piece 4, and therefore the electrode connecting portion 8.8'
, 9 and 9' are formed on the semiconductor substrate 7 by vapor deposition and diffusion, the electrode connection parts 8 and 8' are connected to the current terminals 5 and 5', respectively, and the electrode connection parts 9 and 9' are connected to the voltage terminals 6 and 6'. Make sure that they are properly connected to each other. FIG. 6 shows an equivalent circuit of the Hall element thus manufactured.
かかる構成のホール素子は、半導体装置、特にトランジ
スタの製造技術の応用によって簡単に製造されるが、ホ
ール素子チップは構造上、特性上、又は経済上の理由で
小さく造られ、通常その面積は０．５〜１．ＯＩｌ１ｍ
２程度である。これがため、各電極５．５’ 、６及び
６′間、従って各電極接続部８．８’ ９及び９′間の
絶縁耐圧は１０〜１００ｖとなりその結果この絶縁耐圧
以上の外来サージ電圧が到来した場合ホール素子が損傷
するようになる。A Hall element with such a configuration is easily manufactured by applying the manufacturing technology of semiconductor devices, especially transistors, but the Hall element chip is made small for structural, characteristic, or economic reasons, and its area is usually 0. .5~1. OIl1m
It is about 2. Therefore, the dielectric strength voltage between each electrode 5.5', 6, and 6', and thus between each electrode connection portion 8,8', 9, and 9' becomes 10 to 100 V, and as a result, an external surge voltage exceeding this dielectric strength voltage arrives. If this happens, the Hall element will be damaged.
かかる外来サージ電圧に充分耐え得るようにするために
はチップ自体の構造を変化させるか又はチップの寸法を
大きくする必要があり、従ってホール素子の製造が高価
となる欠点がある。In order to sufficiently withstand such an external surge voltage, it is necessary to change the structure of the chip itself or increase the size of the chip, which has the disadvantage that manufacturing of the Hall element becomes expensive.
本発明は上述した欠点を除去し、磁電変換素子を用いる
電子装置において、電圧間の耐圧を向上させ、高周波ノ
イズや静電気又は電気回路の耐圧試験等によってホール
素子の電極間に過電圧が外来サージとして印加され、ホ
ール素子が電圧破壊するのを防止し得るように適切に構
成配置した上述した種類の電流検出器を提供することを
目的とするにある。The present invention eliminates the above-mentioned drawbacks and improves the withstand voltage between voltages in an electronic device using a magnetoelectric transducer. It is an object of the present invention to provide a current detector of the above-mentioned type which is suitably constructed and arranged so as to be able to prevent the Hall element from being damaged by the voltage applied thereto.
本発明は検出すべき電流が流れる電流導体と、この電流
導体を囲み発生磁界内に設けられた磁気回路と、この磁
気回路のギャップ内に設置された磁電変換素子とを具え
る電流検出器において、前記磁電変換素子の各電流端子
及び電圧端子間に夫々電圧制限素子を設けるようにした
ことを特徴とする。The present invention provides a current detector comprising a current conductor through which a current to be detected flows, a magnetic circuit surrounding the current conductor and provided within a generated magnetic field, and a magnetoelectric conversion element installed within the gap of the magnetic circuit. , a voltage limiting element is provided between each current terminal and voltage terminal of the magnetoelectric conversion element.
本発明の実施に当り、磁電変換素子及び電圧制限素子を
同一半導体基板に集積化するようにする。In carrying out the present invention, a magnetoelectric conversion element and a voltage limiting element are integrated on the same semiconductor substrate.
本発明の他の例では磁電変換素子及び電圧制限素子を夫
々個別に製造してハイブリッド構体に構成するようにす
る。In another example of the present invention, the magnetoelectric transducer and the voltage limiting element are each manufactured separately and constructed into a hybrid structure.
磁電変換素子をホール素子とし、電圧制御素子をツェナ
ーダイオードとするのが好適である。Preferably, the magnetoelectric conversion element is a Hall element, and the voltage control element is a Zener diode.
図面につき本発明を説明する。The invention will be explained with reference to the drawings.
本発明電流検出器のホール素子の構成を第１及び２図に
示す。即ち、第１図には本発明によるホ−ル索子の等価
回路を示す。電流検出器にｒ！ｉ電変換素子としてホー
ル素子を用いる場合、前記式（１）において検出Ｎ流＝
Ｂと置換できるため電流端子５，５′間の電流を一定方
向、一定Ｎ流値として使用する。これがため、第１図に
示すように各電極端子５−６’ 、６’ −５’ 、
５−６及び６−５′間、従って電極接続部８−９’ 、
９’ −８’、８−９及び９−８′間に夫々ツェナー
ダイオードＤＩ、０２．Ｄ３及びＤ４を挿入し、これに
よりホール素子の絶縁耐圧１０− １００Ｖを保持し、
外来サージからホール素子を確実に保護し得るようにす
る。かように各電極間にツェナーダイオードを挿入して
も電Ｆｉ６−６’ 間に発生する電圧がツェナーダイオ
ードのツェナー電圧よりも低い値であれば何等問題は発
生しない。The configuration of the Hall element of the current detector of the present invention is shown in FIGS. 1 and 2. That is, FIG. 1 shows an equivalent circuit of a Hall cable according to the present invention. r to the current detector! When using a Hall element as an i-electrical conversion element, in the above formula (1), detection N current =
Since it can be replaced with B, the current between the current terminals 5 and 5' is used in a constant direction and as a constant N current value. Therefore, as shown in FIG. 1, each electrode terminal 5-6', 6'-5',
5-6 and 6-5', thus the electrode connection 8-9',
Zener diodes DI, 02.9'-8', 8-9 and 9-8' respectively. Insert D3 and D4, thereby maintaining the dielectric strength voltage of the Hall element from 10 to 100V,
To surely protect a Hall element from external surge. Even if a Zener diode is inserted between each electrode in this way, no problem will occur as long as the voltage generated between the electrodes Fi6 and Fi6' is lower than the Zener voltage of the Zener diode.
かようにして構成したホール素子片４を磁気回路ＭＣの
磁気コア１に設けたギャップ２内に配置し、この磁気回
路ＭＣを電流導体３の囲りに配設して電流検出器を形成
する。The Hall element piece 4 thus configured is placed in the gap 2 provided in the magnetic core 1 of the magnetic circuit MC, and this magnetic circuit MC is placed around the current conductor 3 to form a current detector. .
一般にホール素子の出力電圧は実用状態においても最大
数百ミリボルト以下であるため、ツェナーダイオードの
挿入による出力電圧の低下はない。In general, the output voltage of a Hall element is at most several hundred millivolts or less even in practical conditions, so inserting a Zener diode does not reduce the output voltage.
従って１０〜２０ｖ程度のツェナー電圧を有するツェナ
ーダイオードＤ１〜Ｄ４を前記の如く各電極間に使用し
ても本来の特性を損うことはなく、ツェナー電圧以上の
電圧が印加された場合でもツェナーダイオードＤ１〜Ｄ
４で電圧が制限され、ホール素子の電極間を過電圧即ち
外来サージから保護することができる。Therefore, even if Zener diodes D1 to D4 having a Zener voltage of about 10 to 20 V are used between each electrode as described above, the original characteristics will not be impaired, and even if a voltage higher than the Zener voltage is applied, the Zener diodes D1~D
4 limits the voltage and can protect the space between the electrodes of the Hall element from overvoltage, that is, from external surges.
第７図に等価回路で示す本発明によるホール素子の集積
化構体を第２図に平面図で示す。図面から明らかなよう
に同一半導体基板７に、第３図につき説明した所と同様
にホール素子片４と、ツェナーダイオードＤ１．Ｄ２．
Ｄ３及びＤ４と、電極接続部８．８’ 、９及び９′と
を通常のトランジスタ製造技術による拡散処理によって
形成する。FIG. 2 shows a plan view of the Hall element integrated structure according to the present invention, which is shown in an equivalent circuit in FIG. 7. As is clear from the drawing, on the same semiconductor substrate 7, Hall element pieces 4 and Zener diodes D1 . D2.
D3 and D4 and electrode connections 8.8', 9 and 9' are formed by a diffusion process using conventional transistor manufacturing techniques.
即ちツェナーダイオードＤＩ、Ｄ２．Ｄ３及びＤ４をも
ホール素子片４と同時に半導体基板７に集積化する。That is, Zener diodes DI, D2. D3 and D4 are also integrated on the semiconductor substrate 7 at the same time as the Hall element piece 4.
本発明は上述した例にのみ限定されるものではなく、種
々の変更を行うことができる。例えばホール素子片４と
ツェナーダイオードＤ１〜Ｄ４とを夫々個別に製造し、
これらをハイブリッド回路構体として形成することがで
きる。The present invention is not limited to the above-mentioned examples, and various modifications can be made. For example, the Hall element piece 4 and the Zener diodes D1 to D4 are each manufactured separately,
These can be formed as a hybrid circuit structure.
上述した本発明によるホール素子を用いた電流検出器と
、従来のホール素子構成による電流検出器とを比較する
ために、過電圧条件として即ち外来サージとして幅１μ
ｓ１繰返し周波数５０８２のパルス電圧を各電流検出器
のホール素子の電極間に印加してその破壊電圧を測定し
たところ、従来のホール素子による電流検出器では５０
■〜１００Ｖの′ＭＮ圧、第１及び２図に示すホール素
子片及びツェナーダイオードの集積化による電流検出器
では２０００Ｖの耐電圧、ホール素子片及びツェナーダ
イオードをハイブリッド構体とした電流検出器では１６
００Ｖの耐電圧を夫々得ることができた。In order to compare the current detector using the Hall element according to the present invention described above with the current detector using the conventional Hall element configuration, a width of 1 μm was set as an overvoltage condition, that is, an external surge.
When a pulse voltage with a repetition rate of 5082 s1 was applied between the electrodes of the Hall element of each current detector and its breakdown voltage was measured, it was found that the current detector using a conventional Hall element had a pulse voltage of 5082.
■ ~100V of 'MN voltage, a current detector with an integrated Hall element piece and a Zener diode shown in Figures 1 and 2 has a withstand voltage of 2000V, and a current detector with a hybrid structure of a Hall element piece and a Zener diode has a withstand voltage of 16
It was possible to obtain a withstand voltage of 00V.
かように本発明によれば、ホール素子片の各電極間にツ
ェナーダイオードを設けるだけで耐圧を著しく向上させ
ることかできる。As described above, according to the present invention, the withstand voltage can be significantly improved simply by providing a Zener diode between each electrode of the Hall element piece.
第１図は本発明電流検出器に用いるホール素子の等価回
路図、
第２図は同じくその集積化構体を示す平面図、第３図は
電流検出器の一般的な構造を示す斜視図、
第４図は第３図のホール素子の構成及び動作原理を示す
斜視図、
第５図は第４図のホール素子の集積化構体を示す平面図
、
第６図は第３図のホール素子の集積化構体を示す等価回
路図である。
１・・・磁気コア ２・・・ギャップ３・・・電
流導体 ４・・・ホール素子片５．５′・・・電
流端子 ６．６′・・・電圧端子７・・・半導体装置
８、 ８’ 、 ９． ９’・・・電極接続部Ｄ１〜
Ｄ４・・・ツェナーダイオード
Ｂ・・・磁束 １ｃ・・・検出すべき電流Ｖ
ｈ・・・ホール電圧
特許出願人 ナナエレクトロニクス株式会社第１図
第２図
第３図FIG. 1 is an equivalent circuit diagram of the Hall element used in the current detector of the present invention, FIG. 2 is a plan view showing its integrated structure, FIG. 3 is a perspective view showing the general structure of the current detector, Figure 4 is a perspective view showing the configuration and operating principle of the Hall element shown in Figure 3, Figure 5 is a plan view showing the integrated structure of the Hall element shown in Figure 4, and Figure 6 is an integrated structure of the Hall element shown in Figure 3. FIG. 3 is an equivalent circuit diagram showing the structure. 1... Magnetic core 2... Gap 3... Current conductor 4... Hall element piece 5.5'... Current terminal 6.6'... Voltage terminal 7... Semiconductor device 8, 8', 9. 9'... Electrode connection part D1~
D4... Zener diode B... Magnetic flux 1c... Current V to be detected
h... Hall voltage patent applicant Nana Electronics Co., Ltd. Figure 1 Figure 2 Figure 3
Claims (1)
を囲み発生磁界内に設けられた磁気回路と、この磁気回
路のギャップ内に設置された磁電変換素子とを具える電
流検出器において、前記磁電変換素子の各電流端子及び
電圧端子間に夫々電圧制限素子を設けるようにしたこと
を特徴とする電流検出器。 ２、磁電変換素子及び電圧制限素子を同一半導体基板に
集積化するようにしたことを特徴とする特許請求の範囲
第１項に記載の電流検出器。 ３、磁電変換素子及び電圧制限素子を夫々個別に製造し
てハイブリッド構体に構成するようにしたことを特徴と
する特許請求の範囲第１項に記載の電流検出器。 ４、磁電変換素子をホール素子としたことを特徴とする
特許請求の範囲第１項乃至第３項の何れかの項に記載の
電流検出器。 ５、電圧制限素子をツェナーダイオードとしたことを特
徴とする特許請求の範囲第１項乃至第３項の何れかの項
に記載の電流検出器。[Claims] 1. A current conductor through which a current to be detected flows, a magnetic circuit surrounding this current conductor and provided within a generated magnetic field, and a magnetoelectric conversion element installed within a gap of this magnetic circuit. 1. A current detector characterized in that a voltage limiting element is provided between each current terminal and voltage terminal of the magnetoelectric transducer. 2. The current detector according to claim 1, wherein the magnetoelectric conversion element and the voltage limiting element are integrated on the same semiconductor substrate. 3. The current detector according to claim 1, wherein the magnetoelectric conversion element and the voltage limiting element are each manufactured separately to form a hybrid structure. 4. The current detector according to any one of claims 1 to 3, characterized in that the magnetoelectric conversion element is a Hall element. 5. The current detector according to any one of claims 1 to 3, characterized in that the voltage limiting element is a Zener diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61157853A JPS6315172A (en) | 1986-07-07 | 1986-07-07 | Current detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61157853A JPS6315172A (en) | 1986-07-07 | 1986-07-07 | Current detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6315172A true JPS6315172A (en) | 1988-01-22 |
Family
ID=15658800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61157853A Pending JPS6315172A (en) | 1986-07-07 | 1986-07-07 | Current detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6315172A (en) |
-
1986
- 1986-07-07 JP JP61157853A patent/JPS6315172A/en active Pending
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