JPS63150976A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPS63150976A JPS63150976A JP61297382A JP29738286A JPS63150976A JP S63150976 A JPS63150976 A JP S63150976A JP 61297382 A JP61297382 A JP 61297382A JP 29738286 A JP29738286 A JP 29738286A JP S63150976 A JPS63150976 A JP S63150976A
- Authority
- JP
- Japan
- Prior art keywords
- film
- infrared ray
- sioxny
- semiconductor substrate
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 7
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 claims abstract 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001272 nitrous oxide Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 238000001514 detection method Methods 0.000 description 21
- 229910004613 CdTe Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（概要〕
本発明の特徴は、ＨｇＣｄＴｅ検知素子を有するＣｄＴ
ｅ基板の裏面に赤外線の反射防止膜としてＳｉＯｘＮｙ
を用いた点にあり、これによって赤外線の入射効率が著
しく改善される。DETAILED DESCRIPTION OF THE INVENTION (Summary) The present invention is characterized in that a CdT
SiOxNy as an anti-reflection film for infrared rays on the back side of the e-substrate.
This method significantly improves the incidence efficiency of infrared rays.
本発明は赤外線検出装置に係り、特に赤外線反射防止膜
にＳｉＯｘＮｙを用いた赤外線検出装置に関する。 赤
外領域で動作する光電変換素子、すなわち赤外線検出素
子と、該検出素子の出力信号を処理する信号処理回路と
を一体化する場合、両者を金属バンブを介して互いに対
向した状態で固着することが一般に行われる。このよう
に構成された赤外線検出素子の場合、検出すべき赤外線
は該検出素子の裏面側から入射させる。従って入射した
赤外線が真空（大気）・と化合物半導体基板との界面で
反射するのを防止する手段が必要とされる。The present invention relates to an infrared detection device, and more particularly to an infrared detection device using SiOxNy as an infrared reflection prevention film. When integrating a photoelectric conversion element that operates in the infrared region, that is, an infrared detection element, and a signal processing circuit that processes the output signal of the detection element, the two should be fixed so that they face each other via a metal bump. is commonly done. In the case of an infrared detection element configured in this way, the infrared rays to be detected are made to enter from the back side of the detection element. Therefore, a means is required to prevent the incident infrared rays from being reflected at the interface between the vacuum (atmosphere) and the compound semiconductor substrate.
従来の裏面入射型赤外線検出装置（以下赤外線検出装置
と呼ぶ）の構造を第２図に示す。FIG. 2 shows the structure of a conventional back-illuminated infrared detection device (hereinafter referred to as an infrared detection device).
図中、−１はＣｄＴｅより成る化合物半導体基板、２は
ＨｇＣｄＴｅエピタキシャル層より成る結晶層、３はホ
トダイオード、４は絶縁膜、５は結合用金属バンブ、６
は入力ダイオード、７はＳｉ基板、３８はＺｎＳより成
る反射防止膜（以下ＺｎＳ反射防止膜と呼ぶ）をそれぞ
れ示す。In the figure, -1 is a compound semiconductor substrate made of CdTe, 2 is a crystal layer made of an HgCdTe epitaxial layer, 3 is a photodiode, 4 is an insulating film, 5 is a metal bump for coupling, and 6
7 indicates an input diode, 7 indicates a Si substrate, and 38 indicates an antireflection film made of ZnS (hereinafter referred to as ZnS antireflection film).
第２図に示すように、従来の赤外線検出装置の場合は、
赤外線１０がＺｎＳ反射防止膜３８を通してＣｄＴｅよ
り成る化合物半導体基板１に入射するようになっている
。As shown in Figure 2, in the case of a conventional infrared detection device,
Infrared rays 10 are made to enter the compound semiconductor substrate 1 made of CdTe through the ZnS antireflection film 38.
しかしながら、上記従来の赤外線検出装置の場合は、赤
外線反射率の比較的高いＺｎＳ （ＺｎＳのエネルギ
ー反射率Ｒは、垂直入射の場合、 Ｒ＞９．５％）に
よって反射防止膜３８が形成されているため、赤外線１
０の光エネルギー中のかなりの部分（約１０％）が信号
として寄与できずに失われるという問題点がある。However, in the case of the conventional infrared detection device described above, the antireflection film 38 is formed of ZnS, which has a relatively high infrared reflectance (the energy reflectance R of ZnS is R>9.5% in the case of normal incidence). Infrared 1
There is a problem in that a considerable portion (approximately 10%) of the zero light energy cannot contribute as a signal and is lost.
本発明は、カドミウム・テルル（ＣｄＴｅ）から成る化
合物半導体基板の表面に、水銀・カドミウム・テルル（
ＨｇＣｄＴｅ）から成る結晶層を形成し、該結晶層を用
いて赤外線検出素子を形成した赤外線検出装置において
、前記化合物半導体基板の裏面に、ＳｉＯｘＮｙから成
る反射防止膜を形成した構成になっている。In the present invention, mercury, cadmium, tellurium (mercury, cadmium, tellurium) (
In an infrared detection device in which a crystal layer made of HgCdTe is formed and an infrared detection element is formed using the crystal layer, an antireflection film made of SiOxNy is formed on the back surface of the compound semiconductor substrate.
このように、ＳｉＯｘＮｙ反射防止膜がＣｄＴｅ化合物
半導体基板上に形成された本発明の赤外線検出装置は、
Ｃｄ Ｔｅ上の薄膜の無反射条件である、下記第１式の
条件がほぼ完全に満たされるため、入射した赤外光が殆
ど反射されることなく化合物半導体基板内部に透過する
。As described above, the infrared detection device of the present invention in which the SiOxNy antireflection film is formed on the CdTe compound semiconductor substrate has the following features:
Since the condition of Equation 1 below, which is a non-reflection condition for a thin film on CdTe, is almost completely satisfied, the incident infrared light is transmitted into the compound semiconductor substrate without being almost reflected.
ｎ＋＝ｙ’；ｘ ｎ ＃１．６フーーー二−第１式第１
式中、ｎ、は薄膜の屈折率、ｎｏは真空中の屈折率でそ
の値は”１．０ 、ｎはＣｄＴｅの屈折率でその値は−
２，８゜
〔実施例〕
以下実施例図に基づいて本発明の詳細な説明する。n+=y'; x n #1.6 Fu-2-1st equation 1st
In the formula, n is the refractive index of the thin film, no is the refractive index in vacuum and its value is 1.0, and n is the refractive index of CdTe and its value is -
2.8゜[Example] The present invention will be described in detail below based on the drawings of the example.
第１図は本発明の赤外線検出装置の一実施例を示す要部
側断面図であるが、前記第２図と同一部分には同一符号
を付している。FIG. 1 is a sectional side view of essential parts of an embodiment of an infrared detection device according to the present invention, and the same parts as in FIG. 2 are given the same reference numerals.
第１図に示すように、本発明の赤外線検出装置の特徴は
、ＣｄＴｅより成る化合物半導体基板１上に形成される
赤外線ｌＯの反射防止膜８がＳｉＯｘＮｙによって構成
されている点にある。As shown in FIG. 1, the feature of the infrared detection device of the present invention is that the antireflection film 8 for infrared rays formed on the compound semiconductor substrate 1 made of CdTe is made of SiOxNy.
以下ＳｉＯｘＮｙ反射防止膜８の形成方法を第１図に基
づいて詳述する。The method for forming the SiOxNy antireflection film 8 will be described in detail below with reference to FIG.
ＳｉＯｘＮｙ反射防止膜８は、屈折率を反射防止条件（
１，６フ一−−前記第１式参照）の近傍に設定し、入射
する赤外線の波長によって反射率の最小となる膜厚条件
ｄ＝λ／４ｎ＋ ＋ｍ・λ／２ｎ、（ｍ＝０．１，２．
−一−）を満たす膜厚ｄを選ぶ。The SiOxNy antireflection film 8 has a refractive index under antireflection conditions (
1,6 (see equation 1 above), and the film thickness condition d=λ/4n+ +m·λ/2n, (m=0. 1, 2.
-1-) Select a film thickness d that satisfies (1).
例えば屈折率ｎ１ ＝ｔ、７のＳｉＯｘＮｙを用いて反
射防止膜８を形成する場合を想定すると、入射赤外線１
０の波長が４μｍの時にはＳｉＯｘＮｙ反射防止膜８の
膜厚を５８８０人程度に制御することにより、最小の反
射率Ｒ″＝０．０４％が得られる（ただしｍ＝ｏのとき
）。For example, assuming that the antireflection film 8 is formed using SiOxNy with a refractive index n1 = t and 7, the incident infrared ray 1
When the wavelength of 0 is 4 μm, the minimum reflectance R″=0.04% can be obtained by controlling the thickness of the SiOxNy antireflection film 8 to about 5880 nm (provided that m=o).
ＳｉＯｘＮｙ反射防止膜８は、たとえば電子サイクロト
ロン共鳴プラズマＣＶＤ （ＥＣＲ−ＰＣＶＤ）法によ
り、反応ガスとして、窒素（ＮＺ） 、亜酸化窒素（Ｎ
ｔＯ） 、 シラン（Ｓ ｉ ＩＩ ａ）を導入する
ことにより形成する。The SiOxNy antireflection film 8 is formed using nitrogen (NZ), nitrous oxide (N
tO), is formed by introducing silane (S i II a).
なお、ＳｉＯｘＮｙ反射防止膜８は、赤外線検出素子の
完成後に形成されるので、低温（１００℃以下）で膜形
成が可能なＥＣＲ−ＰＣＶＤ法は、熱によって水銀（ｈ
）が簡単に飛散する２例えばＩＩＢＣｄＴｅのような半
導体材料を用いた検出素子においては極めて有利である
。Note that the SiOxNy antireflection film 8 is formed after the completion of the infrared detection element, so the ECR-PCVD method, which allows film formation at low temperatures (below 100°C), can remove mercury (h) by heat.
) is extremely advantageous in a detection element using a semiconductor material such as IIBCdTe, which easily scatters.
なお、本実施例では検出素子と信号処理回路とを一体化
した場合を示したが、本発明は信号処理回路を一体化し
ないｔ＾なる赤外線検出装置にも適用できることはいう
までもない。Although this embodiment shows a case in which the detection element and the signal processing circuit are integrated, it goes without saying that the present invention can also be applied to an infrared detection device t^ in which the signal processing circuit is not integrated.
本発明によれば、入射赤外線の反射を効果的に防止でき
るので、反射による光エネルギーの損失を減少させるこ
とができ、より高感度の赤外線検出近因を構成すること
が可能となる。According to the present invention, since reflection of incident infrared rays can be effectively prevented, loss of optical energy due to reflection can be reduced, and a more sensitive infrared detection proximal factor can be constructed.
第１図は本発明の一実施例を示す要部側断面図、第２図
は従来の赤外線検出装置の構造を示す要部側断面図であ
る。
図中、ｌは化合物半導体基板、
２は結晶層、
３はホトダイオード、
４は絶縁膜、
５は結合用金属バンプ、
６は入力ダイオード、
７はＳｉ基板、
８はＳｉＯｘＮｙ反射防止膜、
３８はＺｎＳ反射防止膜、
１０は赤外線、
をそれぞれ示す。
本発明の一災旋例図
第１図FIG. 1 is a sectional side view of a main part showing an embodiment of the present invention, and FIG. 2 is a sectional side view of a main part showing the structure of a conventional infrared detection device. In the figure, l is a compound semiconductor substrate, 2 is a crystal layer, 3 is a photodiode, 4 is an insulating film, 5 is a coupling metal bump, 6 is an input diode, 7 is a Si substrate, 8 is a SiOxNy antireflection film, 38 is ZnS 10 indicates an anti-reflection film, and 10 indicates an infrared ray. Figure 1 is an illustration of an example of the disaster of the present invention.
Claims (1)
基板（１）の表面に、水銀・カドミウム・テルル（Ｈｇ
ＣｄＴｅ）から成る結晶層（２）を形成し、該結晶層（
２）を用いて赤外線検出素子を形成した赤外線検出装置
において、 前記化合物半導体基板（１）の裏面に、ＳｉＯｘＮｙか
ら成る反射防止膜（８）を形成したことを特徴とする赤
外線検出装置。[Claims] On the surface of a compound semiconductor substrate (1) made of cadmium-tellurium (CdTe),
A crystal layer (2) made of CdTe) is formed, and the crystal layer (2) is made of
2) An infrared detecting device in which an infrared detecting element is formed using: An infrared detecting device characterized in that an antireflection film (8) made of SiOxNy is formed on the back surface of the compound semiconductor substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61297382A JPS63150976A (en) | 1986-12-12 | 1986-12-12 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61297382A JPS63150976A (en) | 1986-12-12 | 1986-12-12 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63150976A true JPS63150976A (en) | 1988-06-23 |
Family
ID=17845764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61297382A Pending JPS63150976A (en) | 1986-12-12 | 1986-12-12 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63150976A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0493484A1 (en) * | 1989-09-18 | 1992-07-08 | Biostar Med Prod | Method and apparatus for detection of an analyte. |
| US5449943A (en) * | 1991-08-08 | 1995-09-12 | Santa Barbara Research Center | Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface |
| US5646437A (en) * | 1991-08-08 | 1997-07-08 | Santa Barbara Research Center | Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation |
| JP2010159062A (en) * | 2009-01-07 | 2010-07-22 | Honda Motor Co Ltd | Label affixing structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5143088A (en) * | 1974-10-09 | 1976-04-13 | Sony Corp | |
| JPS60198774A (en) * | 1984-03-22 | 1985-10-08 | Fujitsu Ltd | Infrared ray detector |
-
1986
- 1986-12-12 JP JP61297382A patent/JPS63150976A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5143088A (en) * | 1974-10-09 | 1976-04-13 | Sony Corp | |
| JPS60198774A (en) * | 1984-03-22 | 1985-10-08 | Fujitsu Ltd | Infrared ray detector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0493484A1 (en) * | 1989-09-18 | 1992-07-08 | Biostar Med Prod | Method and apparatus for detection of an analyte. |
| US5449943A (en) * | 1991-08-08 | 1995-09-12 | Santa Barbara Research Center | Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface |
| US5646437A (en) * | 1991-08-08 | 1997-07-08 | Santa Barbara Research Center | Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation |
| JP2010159062A (en) * | 2009-01-07 | 2010-07-22 | Honda Motor Co Ltd | Label affixing structure |
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