JPS63147365A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS63147365A JPS63147365A JP61294213A JP29421386A JPS63147365A JP S63147365 A JPS63147365 A JP S63147365A JP 61294213 A JP61294213 A JP 61294213A JP 29421386 A JP29421386 A JP 29421386A JP S63147365 A JPS63147365 A JP S63147365A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- solid
- light
- pixel
- image sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract 6
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は固体撮像装置に関し、特に固体撮像素子の改
良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a solid-state imaging device, and particularly relates to improvement of a solid-state imaging device.
第２図（８）は従来の固体撮像装置を示す図であり、図
において、ｌは受光用レンズ、２はカラー固体撮像素子
、３は固体撮像素子２からの電気信号を処理する信号処
理回路、４はカラー固体描像装置の出力端子である。FIG. 2 (8) is a diagram showing a conventional solid-state imaging device. In the figure, l is a light-receiving lens, 2 is a color solid-state imaging device, and 3 is a signal processing circuit that processes electrical signals from the solid-state imaging device 2. , 4 are output terminals of the color solid-state imaging device.
第２図（ｂｌはカラー固体撮像装置をレンズｌ側より見
た図である。図中、５は固体撮像素子２の受光面におけ
るレンズ１による等測的な像域を示す像円で、６は固体
ｆＩｉ像素子２のレンズ１側より見た等測的な受光面で
ある。FIG. 2 (bl is a diagram of the color solid-state imaging device viewed from the lens l side. In the figure, 5 is an image circle indicating the isometric image area by the lens 1 on the light-receiving surface of the solid-state imaging device 2, and 6 is an isometric light-receiving surface of the solid-state fIi image element 2 viewed from the lens 1 side.
第２図（Ｃ１は受光面６に整然と配列されている画素１
５の断面図であり、図中、１１はシリコン半導体基板、
１２はホトダイオード、１３は保護膜、１４は凸形集光
レンズである。Figure 2 (C1 is the pixel 1 arranged in an orderly manner on the light receiving surface 6.
5 is a cross-sectional view of 5, in which 11 is a silicon semiconductor substrate;
12 is a photodiode, 13 is a protective film, and 14 is a convex condenser lens.
次に動作について説明する。入射光＠！７はレンズ１を
通り固体撮像素子２の受光面６に結像する。Next, the operation will be explained. Incident light @! 7 passes through the lens 1 and forms an image on the light receiving surface 6 of the solid-state image sensor 2.
入射光像７が受光面６上の画素１５に入ると、例えば特
開昭５９−９２５６８号公報に示す如く、まず凸形集光
レンズ１４により光を集め、見掛は上開口率を向上させ
たと同じ効果を得る様にした後、光電変換部であるホト
ダイオード１２へ進み電気信号に変換される。When the incident light image 7 enters the pixel 15 on the light-receiving surface 6, the light is first collected by a convex condenser lens 14, as shown in, for example, Japanese Patent Laid-Open No. 59-92568, and the apparent upper aperture ratio is improved. After obtaining the same effect as that, the signal goes to the photodiode 12, which is a photoelectric conversion section, and is converted into an electric signal.
電気信号は信号処理回１２３３にてテレビカメラ用に通
ずる電気信号に変換され、出力端子４より出力される。The electrical signal is converted into an electrical signal for a television camera in a signal processing circuit 1233 and outputted from an output terminal 4.
入射光像７はレンズｌを通過するとき固体撮像素子２の
受光面６の大きさに通する様な大きさに変換されるが、
その像の大きさを示す領域を億円５で示しである。億円
５の領域内の像のうち固体撮像素子２の受光面６に入射
した入射光像のみ受光面上の画素１５にて電気信号に変
換され信号処理回路へと進む。When the incident light image 7 passes through the lens l, it is converted to a size that allows it to pass through the light receiving surface 6 of the solid-state image sensor 2.
The area indicating the size of the image is shown in 5 billion yen. Of the images within the area of 5 billion yen, only the incident light image incident on the light receiving surface 6 of the solid-state image sensor 2 is converted into an electric signal by the pixel 15 on the light receiving surface and proceeds to the signal processing circuit.
レンズ１は中心部の光透過率が高いので入射光像７はレ
ンズの中心部の方がレンズの周辺部の光量よりも多くな
り、受光面６に入射する光のうち画像の四隅へ入射する
光は中心に入射する光よりも少なくなる。Since the light transmittance of the lens 1 is high at the center, the incident light image 7 has a larger amount of light at the center of the lens than at the periphery of the lens, and among the light incident on the light-receiving surface 6, it is incident on the four corners of the image. Less light will be incident on the center.
その結果、四隅に対応して変換される電気信号は中心部
に対応して変換される電気信号よりも相対的に小さくな
る。As a result, the electrical signals converted corresponding to the four corners are relatively smaller than the electrical signals converted corresponding to the center.
従来の固体撮像装置は以上のように構成されているので
、レンズ１を通過した入射像のうち（象円５の円周辺部
に近いところの入射光、即ち受光面６の四辺形の四隅に
あたる部分の入射光はレンズｌの中心部の入射光より域
少し、電気信号を画像として再現したとき、四隅が暗く
なる、所謂シェーディング親電が発生する。特にしぼり
を開放にした場合この傾向が顕著に表われ、画質を著し
く損ない問題となっていた。Since the conventional solid-state imaging device is configured as described above, among the incident images passing through the lens 1 (the incident light near the periphery of the quadrant 5, that is, the four corners of the quadrilateral of the light-receiving surface 6), The incident light at the center of the lens l is smaller than the incident light at the center of the lens l, and when the electrical signal is reproduced as an image, the four corners become dark, a so-called shading effect occurs.This tendency is especially noticeable when the aperture is opened. This was a problem that significantly degraded image quality.
この発明は上記のような問題点を解消するためになされ
たもので、受光用レンズにより画面の四隅が暗くなる、
シェーディング現象を改善できる固体撮像装置を得るこ
とを目的とする。This invention was made to solve the above problems, and the four corners of the screen become dark due to the light receiving lens.
The purpose of the present invention is to obtain a solid-state imaging device that can improve shading phenomena.
この発明に係る固体撮像装置は、固体撮像素子２の受光
面６上にある各画素１５の画素レンズのレンズ作用を、
個々の画素の位置に応じて変化させるように構成したも
のであり、例えば画素レンズとして凸形集光レンズ１４
を用いその曲率を受光面６の中心より周辺になるに従っ
て変化させるように構成したものである。The solid-state imaging device according to the present invention controls the lens action of the pixel lens of each pixel 15 on the light-receiving surface 6 of the solid-state imaging device 2.
It is configured to change according to the position of each pixel, and for example, a convex condenser lens 14 is used as a pixel lens.
The curvature of the light-receiving surface 6 is changed from the center to the periphery.
この発明においては、固体撮像素子２の受光面６上にあ
る画素１５の凸形集光レンズ１４の曲率が受光面６の中
心より周辺になるに従って増大するように構成されてお
り、固体撮像素子２の受光面６上にある画素１５の凸形
葉先レンズ１４は周辺部の入射光量を見掛はヒ増加させ
るので、レンズ１の周辺部の透過率の悪さによる入射光
量の減少分が補正され、画面の四隅まで均一な画像を得
ることができるようになる。In this invention, the curvature of the convex condensing lens 14 of the pixel 15 on the light-receiving surface 6 of the solid-state image sensor 2 is configured to increase from the center of the light-receiving surface 6 toward the periphery. The convex leaf lens 14 of the pixel 15 on the light-receiving surface 6 of lens 2 apparently increases the amount of incident light in the peripheral area, so the decrease in the amount of incident light due to poor transmittance in the peripheral area of lens 1 is corrected. This makes it possible to obtain a uniform image up to the four corners of the screen.
以下、この発明の一実施例を図について説明する。第１
図（８１は本発明の一実施例による固体撮像装置を示し
、図において、１はレンズ、２は固体撮像素子、３は固
体撮像素子からの電気信号を処理する信号処理回路、４
は出力端子である。An embodiment of the present invention will be described below with reference to the drawings. 1st
FIG. 81 shows a solid-state imaging device according to an embodiment of the present invention, in which 1 is a lens, 2 is a solid-state imaging device, 3 is a signal processing circuit that processes electrical signals from the solid-state imaging device, and 4
is the output terminal.
第１図（ｂ）は第１図（ａｌの固体撮像装置をレンズ１
側より見た模式図である。図中、５はレンズ１による固
体撮像素子２の受光面６上における等測的な億円であり
、６は固体撮像素子２のレンズ１側より見た等測的な受
光面である。Figure 1(b) shows the solid-state imaging device in Figure 1(al) with lens 1.
It is a schematic diagram seen from the side. In the figure, 5 is an isometric 100,000,000 yen on the light-receiving surface 6 of the solid-state image sensor 2 due to the lens 1, and 6 is the isometric light-receiving surface of the solid-state image sensor 2 viewed from the lens 1 side.
また、第１図（Ｃ１，ｆｄ）は受光面６に整然と配列さ
れている画素１５の断面図である。同図（Ｃ）は受光面
６の中心部に近い部分の断面図であり、図中、１１はシ
リコン半導体基板、１２はホトダイオード、１３は保護
膜、１４ａは凸形集光レンズ（画素レンズ）である。同
図（（ｊ）は受光面６の四隅に近い部分の断面図であり
、図中、１１はシリコン半導体基板、１２はホトダイオ
ード、１３は保護膜、１４ｂは凸形集光レンズ（画素レ
ンズ）である。Further, FIG. 1 (C1, fd) is a cross-sectional view of the pixels 15 arranged in an orderly manner on the light-receiving surface 6. Figure (C) is a cross-sectional view of a portion near the center of the light-receiving surface 6. In the figure, 11 is a silicon semiconductor substrate, 12 is a photodiode, 13 is a protective film, and 14a is a convex condenser lens (pixel lens). It is. The figure ((j) is a cross-sectional view of a portion near the four corners of the light-receiving surface 6. In the figure, 11 is a silicon semiconductor substrate, 12 is a photodiode, 13 is a protective film, and 14b is a convex condenser lens (pixel lens). It is.
次に本発明の一実施例によるカラー固体撮像装置の動作
について説明する。Next, the operation of the color solid-state imaging device according to an embodiment of the present invention will be explained.
第１図（ａ）に示す構成において、入射光像７はレンズ
１を通り固体撮像素子２の受光面６に結像する。入射光
＠！７が受光面６上の画素１５に到達した状態を第１図
（Ｃ１を用いて説明する。入射光像７はまず、凸形集光
レンズ１４ａ又は１４ｂにより光を集め、見掛は上開口
率を向上させたのと同じ効果を得る様にした後、保護膜
１３を通過しホトダイオード１２へ進み電気信号に変換
される。In the configuration shown in FIG. 1(a), an incident light image 7 passes through a lens 1 and forms an image on a light-receiving surface 6 of a solid-state image sensor 2. As shown in FIG. Incident light @! 7 reaches the pixel 15 on the light-receiving surface 6 will be explained using FIG. After achieving the same effect as that of improving the rate, the light passes through the protective film 13, advances to the photodiode 12, and is converted into an electrical signal.
電気信号はさらに信号処理回路３にてテレビカメラ用に
適する電気信号に変換され、出力端子４より出力される
。The electrical signal is further converted into an electrical signal suitable for use with a television camera in a signal processing circuit 3, and is outputted from an output terminal 4.
次に受光面６と画素１５について説明する。最近の固体
撮像素子２の受光面６には縦方向に約５００ｆ囚、横方
向約５００個、合計約２５万個程度の画素が整然と配列
されており、受光面６上に結像された入射光＠！７の各
部分の光情報を画素１５が各々電気信号に変換する様に
なっている。Next, the light receiving surface 6 and the pixels 15 will be explained. The light-receiving surface 6 of a recent solid-state image sensor 2 has approximately 250,000 pixels in total, which are approximately 500 f in the vertical direction and approximately 500 in the horizontal direction, arranged in an orderly manner. light@! Each pixel 15 converts the optical information of each part of 7 into an electric signal.
また、入射光像７と受光面６との寸法関係について第１
図（ｂｌを用いて説明する。第１図（ｂｌはカラー固体
撮像装置をレンズ１側より見た図である。Also, regarding the dimensional relationship between the incident light image 7 and the light receiving surface 6, the first
The explanation will be given using FIG.
円形は受光面６と同じ面上における、レンズｌによる等
測的な像の領域を示ず億円であり、レンズ１の入射面と
同じ円形になっている。The circle does not indicate the area of the isometric image by the lens l on the same surface as the light receiving surface 6, but is 100 million yen, and has the same circular shape as the entrance surface of the lens 1.
さて、億円５内の入射光像７による像のうち受光面６上
に入射した光による像のみが固体撮像素子２により電気
信号に変換される。レンズの光学的特性を評価すると、
テレビカメラ用ズームレンズは１０〜１５枚のレンズを
重ね合わせて構成された組合せレンズであり、総合の光
透過率はレンズ１の中心より周辺になるに従って減少す
る。その減少する割合はコサイン４乗則といわれる割合
で減少する。そのため受光面６上の光も均一な光量にな
らず、四隅に近づくに従って光量が減少する。これを電
気信号に変換し信号処理を行い、再生画像としてブラウ
ン管等で再生すると、四隅の部分は中心部よりも暗くな
り均一性のない画像となる。Now, among the images of the incident light image 7 within 500 million yen, only the image of the light incident on the light receiving surface 6 is converted into an electrical signal by the solid-state image sensor 2. When evaluating the optical properties of a lens,
A zoom lens for a television camera is a combination lens constructed by stacking 10 to 15 lenses, and the total light transmittance decreases from the center of the lens 1 toward the periphery. The rate at which it decreases decreases at a rate called the cosine fourth power law. Therefore, the amount of light on the light-receiving surface 6 is not uniform, and the amount of light decreases as it approaches the four corners. When this is converted into an electrical signal, subjected to signal processing, and reproduced as a reproduced image on a cathode ray tube or the like, the four corners become darker than the center, resulting in an uneven image.
ここで、第１図（Ｃ） 、 （ｄ）に戻って具体的な対
策法について説明する。第１図（Ｃ）は画素１５におけ
る入射光像７側の凸レンズの曲率が第１図（ｄ）の凸レ
ンズの曲率よりも小さくなっている。逆に第３図（ｄ）
の凸レンズは曲率を太き（して光を築め乙作用を大きく
し、見掛は上の開口率を大きくしである。Now, returning to FIGS. 1(C) and 1(d), specific countermeasures will be explained. In FIG. 1(C), the curvature of the convex lens on the side of the incident light image 7 in the pixel 15 is smaller than the curvature of the convex lens in FIG. 1(d). On the contrary, Fig. 3(d)
The convex lens has a thicker curvature (which increases the light effect and increases the apparent aperture ratio).
即ち、画素１５ｂは画素１５ａよりも見掛は上感度が上
がったことになる。That is, the pixel 15b appears to have higher sensitivity than the pixel 15a.
とごろで、先程述べたように、レンズｌには周辺で光量
が減少する性質があるので、受光面６上にこれらの画素
を配列し補正することを行なおうとするものである。第
１図（ｅ）にその場合の配列例を示す。受光面６の中心
部に最も凸レンズの曲率の小さい画素を配置し、中心部
より離れるに従い凸レンズの曲率の大きな画素を配置す
るようにすればよい。その割合はレンズ１による光量の
減少分を補正する割合に合わせ光量が増加するようにす
ればよい。勿論、ごれらの割合は受光面６の中心を基準
点として同心円状に配置してい（ものである。As mentioned above, since the lens l has the property that the amount of light decreases at the periphery, it is intended to arrange these pixels on the light receiving surface 6 and perform correction. FIG. 1(e) shows an example of the arrangement in that case. A pixel with the smallest convex lens curvature may be arranged at the center of the light receiving surface 6, and pixels with a convex lens having a larger curvature may be arranged as the distance from the center increases. The ratio may be set so that the amount of light increases in accordance with the rate at which the decrease in the amount of light due to the lens 1 is corrected. Of course, the proportions of the rays are arranged concentrically with the center of the light-receiving surface 6 as a reference point.
なお、凸レンズの曲率の変化は凸レンズ製造プロセス時
のレジストパターンの形状やエツチング工程の管理によ
り実現することができるものである。Note that the change in the curvature of the convex lens can be realized by controlling the shape of the resist pattern and the etching process during the convex lens manufacturing process.
また、固体撮像素子２をカラー用として製造する場合は
凸レンズを着色してカラーフィルタの作用をさせたり、
凸し・ンズ１４とホトダイオード１２間にカラーフィル
タを配置するが、その場合も全く同様な形状のものを考
えればよい。In addition, when manufacturing the solid-state image sensor 2 for color use, the convex lens may be colored to act as a color filter.
A color filter is disposed between the convex lens 14 and the photodiode 12, but in that case, it is sufficient to consider a color filter having exactly the same shape.
なお、上記実施例では受光面６の中心部に凸レンズの曲
率の小さいものを配置し、それを基準に受光面６の周辺
部は凸レンズの曲率の大きなものを配置するようにした
ものを示したが、これはレンズ１の中心部と周辺部の光
量の差を補正する方法であれば他の方法でもよく、例え
ば、四隅を基準と考えて四隅を曲率の小さな凹レンズと
し中心部を曲率の大きな凸レンズにして補正するように
してもよい。In addition, in the above embodiment, a convex lens with a small curvature is arranged at the center of the light receiving surface 6, and based on this, a convex lens with a large curvature is arranged at the periphery of the light receiving surface 6. However, this may be done in any other way as long as it corrects the difference in the amount of light between the center and the periphery of the lens 1. For example, considering the four corners as a reference, use the four corners as concave lenses with small curvature and the center part as a concave lens with large curvature. The correction may be made by using a convex lens.
また、同じ補正値が得られるならば、凹レンズと凸レン
ズとを混合して使用してもよい。Furthermore, if the same correction value can be obtained, a mixture of concave lenses and convex lenses may be used.
以上のように、この発明に係る固体撮像装置によれば、
画素を構成する画素レンズのレンズ作用の光量差をなく
すことができ、より画質のよいテレビカメラ用の信号を
ｉ；Ｉることができる効果がある。As described above, according to the solid-state imaging device according to the present invention,
It is possible to eliminate the difference in light amount due to the lens action of the pixel lenses constituting the pixel, and there is an effect that a signal for a television camera with better image quality can be obtained.
第１図はこの発明の一実施例による固体撮像装置を示す
図であり、第１図（ａ）は装置全体を示す図、第１図（
ｂｌはレンズ側より見たレンズと受光面の等価的な寸法
を示す図、第１図（Ｃ１，（ｄｉは受光面を構成する画
素の断面図、第１図（ｅ）はこの発明による固体撮像素
子の画素の配置例を示す図である。第２図は従来の固体
撮像装置を示す図であり、第２図（ａ）は従来装置の全
体構成を示す図、第２図（ｂｌはレンズ側より見たレン
ズと受光面の等価的な寸法を示す図、第２図（Ｃ）は受
光面を構成する画素の断面を示す図である。
図において、■は受光用レンズ、２は固体撮像素子、３
は信号処理回路、１４ａ、１４ｂは凸形レンズ（画素レ
ンズ）、１５は画素である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing a solid-state imaging device according to an embodiment of the present invention, FIG. 1(a) is a diagram showing the entire device, and FIG.
bl is a diagram showing the equivalent dimensions of the lens and the light-receiving surface as seen from the lens side, FIG. 2 is a diagram showing an example of arrangement of pixels of an image sensor. FIG. 2 is a diagram showing a conventional solid-state imaging device, FIG. A diagram showing the equivalent dimensions of the lens and the light-receiving surface viewed from the lens side, and FIG. 2(C) is a diagram showing a cross section of a pixel that constitutes the light-receiving surface. Solid-state image sensor, 3
1 is a signal processing circuit, 14a and 14b are convex lenses (pixel lenses), and 15 is a pixel. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (2)
体撮像素子と、 該固体撮像素子からの電気信号をテレビカメラ用電気信
号に変換する信号処理回路とを備えた固体撮像装置にお
いて、 上記固体撮像素子の各画素毎に設けられ画素の位置に応
じたレンズ作用を有する画素レンズを備えたことを特徴
とする固体撮像装置。(1) A light-receiving lens, a solid-state image sensor that converts an input optical image received by the lens into an electrical signal, and a signal processing circuit that converts the electrical signal from the solid-state image sensor into an electrical signal for a television camera. A solid-state imaging device comprising: a pixel lens provided for each pixel of the solid-state imaging device and having a lens action according to the position of the pixel.
固体撮像素子の受光面の中心より周辺の画素になるに従
い各レンズの曲率が増大するものであることを特徴とす
る特許請求の範囲第１項記載の固体撮像装置。(2) The pixel lens is a convex condensing lens, and the curvature of each lens increases from the center of the light-receiving surface of the solid-state image sensor to the peripheral pixels. A solid-state imaging device according to scope 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294213A JPS63147365A (en) | 1986-12-10 | 1986-12-10 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294213A JPS63147365A (en) | 1986-12-10 | 1986-12-10 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63147365A true JPS63147365A (en) | 1988-06-20 |
Family
ID=17804793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61294213A Pending JPS63147365A (en) | 1986-12-10 | 1986-12-10 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63147365A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265386A (en) * | 1988-08-31 | 1990-03-06 | Konica Corp | Solid-state image pickup element |
| US5576562A (en) * | 1994-06-06 | 1996-11-19 | Nec Corporation | Solid-state imaging device |
| US6943831B2 (en) * | 2001-01-24 | 2005-09-13 | Eastman Kodak Company | Method and apparatus to extend the effective dynamic range of an image sensing device and use residual images |
| JP2006049721A (en) * | 2004-08-06 | 2006-02-16 | Matsushita Electric Ind Co Ltd | Solid-state imaging device and its manufacturing method |
| JP2010171450A (en) * | 2010-04-05 | 2010-08-05 | Nikon Corp | Solid-state image sensor and digital camera |
| JP5022601B2 (en) * | 2003-12-18 | 2012-09-12 | パナソニック株式会社 | Solid-state imaging device |
-
1986
- 1986-12-10 JP JP61294213A patent/JPS63147365A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0265386A (en) * | 1988-08-31 | 1990-03-06 | Konica Corp | Solid-state image pickup element |
| US5576562A (en) * | 1994-06-06 | 1996-11-19 | Nec Corporation | Solid-state imaging device |
| US6943831B2 (en) * | 2001-01-24 | 2005-09-13 | Eastman Kodak Company | Method and apparatus to extend the effective dynamic range of an image sensing device and use residual images |
| JP5022601B2 (en) * | 2003-12-18 | 2012-09-12 | パナソニック株式会社 | Solid-state imaging device |
| JP2006049721A (en) * | 2004-08-06 | 2006-02-16 | Matsushita Electric Ind Co Ltd | Solid-state imaging device and its manufacturing method |
| US7847852B2 (en) | 2004-08-06 | 2010-12-07 | Panasonic Corporation | Solid-state imaging device and manufacturing method of solid-state imaging device |
| JP2010171450A (en) * | 2010-04-05 | 2010-08-05 | Nikon Corp | Solid-state image sensor and digital camera |
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