JPS63146417A - Soft magnetic thin film - Google Patents
Soft magnetic thin filmInfo
- Publication number
- JPS63146417A JPS63146417A JP18231686A JP18231686A JPS63146417A JP S63146417 A JPS63146417 A JP S63146417A JP 18231686 A JP18231686 A JP 18231686A JP 18231686 A JP18231686 A JP 18231686A JP S63146417 A JPS63146417 A JP S63146417A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- magnetic thin
- wear resistance
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 58
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 9
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 9
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 16
- 229910045601 alloy Inorganic materials 0.000 abstract description 16
- 229910052733 gallium Inorganic materials 0.000 abstract description 6
- 229910052742 iron Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000011651 chromium Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 239000011162 core material Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、良好な軟磁気特性を示し高保磁力記録媒体用
の磁気ヘッド材料等に好適な軟磁性′ｇＩ膜に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a soft magnetic 'gI film which exhibits good soft magnetic properties and is suitable for magnetic head materials for high coercive force recording media.
本発明は、）ｉ’ｅ、Ｇａ、Ｓｉ （Ｆｅの一部をＣ
Ｏで置換したものを含む）とＴｉ、Ｃｒ、Ｍｎ、Ｚｒ。In the present invention, a part of i'e, Ga, Si (Fe is
(including those substituted with O), Ti, Cr, Mn, and Zr.
Ｎｂ、Ｍｏ、Ｔａ、Ｗ、’ Ｒｕ、Ｏｓ、Ｉ ｒ、Ｒｅ
。Nb, Mo, Ta, W,' Ru, Os, I r, Re
.
Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少なくとも１種を組合わせた
新規な組成を有する軟磁性ｆｉＩＩ！を提供し、特に耐
摩耗性に優れた軟磁性薄膜を提供するものである。Soft magnetic fiII! has a novel composition that combines at least one of Ni, Pd, Pt, and Hf! In particular, the present invention provides a soft magnetic thin film with excellent wear resistance.
（従来の技術）
例えばオーディオテープレコーダやＶＴＲ（ビデオテー
プレコーダ）等の磁気記録再生装置においては、記録信
号の高密度化や高品質化等が進められており、この高記
録密度化に対応して、磁気記録媒体として磁性粉にＦｅ
、Ｃｏ、Ｎｉ等の金属あるいは合金からなる粉末を用い
た、いわゆるメタルテープや、強磁性金属材料を真空薄
膜形成技術によりベースフィルム上に直接被着した、い
わゆる蒸着テープ等が開発され、各分野で実用化されて
いる。(Prior art) For example, in magnetic recording and reproducing devices such as audio tape recorders and VTRs (video tape recorders), the density and quality of recording signals are increasing, and it is necessary to cope with this increase in recording density. Fe is added to magnetic powder as a magnetic recording medium.
, so-called metal tapes using powders made of metals or alloys such as Co, Ni, etc., and so-called vapor deposition tapes in which ferromagnetic metal materials are directly deposited on a base film using vacuum thin film forming technology, have been developed, and are now widely used in various fields. It has been put into practical use.
ところで、このような高抗磁力を有する磁気記録媒体の
特性を発揮せしめるためには、磁気ヘッドのコア材料の
特性として、高い飽和磁束密度を有するとともに、同一
の磁気ヘッドで再生を行なおうとする場合においては、
高透磁率を併せて有することが要求される０例えば、従
来磁気ヘッドのコア材料として多用されているフェライ
ト材では飽和磁束密度が低く、また、パーマロイでは耐
摩耗性に問題がある。By the way, in order to make use of the characteristics of a magnetic recording medium having such high coercive force, the core material of the magnetic head must have a high saturation magnetic flux density, and the same magnetic head must be used for reproduction. In the case,
For example, ferrite materials, which are required to have high magnetic permeability, have a low saturation magnetic flux density, and permalloy materials have a low saturation magnetic flux density, and permalloy materials have problems in wear resistance.
従来、かかる諸要求を満たすコア材料の一つとして、本
願出願人は先に特許願昭６０−７７３３８号においてＦ
ｅ−Ｇａ−３ｉ系合金からなる軟磁性薄膜を、また特許
願昭６０−２１８７３７号においてＦｅ−Ｇａ−３１−
Ｃｏ系合金からなる軟磁性薄膜を提案した。Conventionally, as one of the core materials that satisfies these requirements, the applicant of the present application previously disclosed F
A soft magnetic thin film made of an e-Ga-3i alloy was also developed in patent application No. 60-218737.
We proposed a soft magnetic thin film made of a Co-based alloy.
ところで現在、磁気ヘッド材に対し高密度記録が要求さ
れているために、テープと磁気ヘッド間の相対速度が上
昇しつつあるのが現状である。従って、初期の磁気ヘッ
ドの電磁変換特性を長時間に亘って維持するためにコア
材に耐摩耗性についての要求が厳しくなっている。Nowadays, because high-density recording is required for magnetic head materials, the relative speed between the tape and the magnetic head is increasing. Therefore, in order to maintain the electromagnetic conversion characteristics of the initial magnetic head over a long period of time, there are increasing demands on the wear resistance of the core material.
このような状況から、高品質化、高記録密度化を図るた
めの磁気記録媒体の高抗磁力化の試みも、従来のコア材
料を用いる限りにおいて、摩耗性の限界から自ずと制約
を受けている。Under these circumstances, attempts to increase the coercive force of magnetic recording media in order to achieve higher quality and higher recording density are naturally constrained by the limitations of abrasion resistance as long as conventional core materials are used. .
そこで本発明は、上述の従来の実情に鑑みて提案された
ものであって、Ｆｅ−Ｇａ−３ｔ （Ｆｅの一部をＣ
ｏで置換したものを含む）系合金のより一層の改善を目
的とするものであり、良好な軟磁気特性（透磁率や抗磁
力等）、高飽和磁束密度を有し、しかも耐摩耗性に優れ
、記録、再生特性の良好な軟磁性薄膜を提供することを
目的とする。Therefore, the present invention was proposed in view of the above-mentioned conventional situation,
The objective is to further improve the alloys (including those substituted with The object of the present invention is to provide a soft magnetic thin film with excellent recording and reproducing characteristics.
本発明者等は、上述の目的を達成せんものと長期に亘り
鋭意研究の結果、特に耐摩耗性の改善と言う観点から、
Ｔｉ、Ｃｒ、Ｍｎ、Ｚｒ、Ｎｂ。The inventors of the present invention have conducted intensive research over a long period of time to achieve the above-mentioned objectives, and as a result, from the viewpoint of improving wear resistance in particular,
Ti, Cr, Mn, Zr, Nb.
Ｍｏ、Ｔａ、Ｗ、Ｒｕ、Ｏｓ、Ｉ ｒ、Ｒｅ、Ｎｉ。Mo, Ta, W, Ru, Os, Ir, Re, Ni.
Ｐｄ、Ｐｔ、Ｈｆの少なくとも１種以上の元素をＦｅ−
Ｇａ−３ｉ （Ｆｅの一部をＣＯで置換したものを含
む）系合金に添加することが有効であることを見出した
。Fe-
It has been found that it is effective to add Ga-3i (including those in which part of Fe is replaced with CO) based alloys.
そこで、本発明の軟磁性薄膜は、Ｆ ＠ ａ ＣＯ４Ｑ
ａ ｃＳ ｉ４Ｍ、（ただしａ、ｂ、ｃ、ｄ、ｅはそ
れぞれ組成比を原子％として表し、ＭはＴｉ、Ｃｒ、Ｍ
ｎ。Therefore, the soft magnetic thin film of the present invention is F @ a CO4Q
a cS i4M, (a, b, c, d, e each represent the composition ratio as atomic %, M is Ti, Cr, M
n.
Ｚｒ、Ｎｂ、Ｍｏ、Ｔａ、Ｗ、Ｒｕ、Ｏｓ、Ｉ ｒ。Zr, Nb, Mo, Ta, W, Ru, Os, Ir.
Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈ（の少なくとも１種を表す
、）なる組成式で示され、その組成範囲が６８≦ａ＋ｂ
≦８４
０≦ｂ≦１５
１≦ｃ≦２３
６≦ｄ≦３１
０．５≦ｅ≦６
ａ＋ｂ＋ｃ＋＋ｉ＋ｅ’＝１００
なる関係を満足することを特徴とした。Re, Ni, Pd, Pt, H (representing at least one type), and the composition range is 68≦a+b
It was characterized by satisfying the following relationships: ≦84 0≦b≦15 1≦c≦23 6≦d≦31 0.5≦e≦6 a+b+c++i+e'=100.
すなわち、本発明の軟磁性薄膜は、Ｆｅ、Ｇａ。That is, the soft magnetic thin film of the present invention is made of Fe or Ga.
５ｉ（Ｆｅの一部をＣｏで置換したものを含む）を基本
組成とする合金にＴｉ、Ｃｒ、Ｍｎ、７．ｒ。5i (including those in which part of Fe is replaced with Co) is alloyed with Ti, Cr, Mn, 7. r.
Ｎｂ、Ｍｏ、Ｔａ、Ｗ、Ｒｕ、Ｏｓ、ｒ ｒ、Ｒｅ。Nb, Mo, Ta, W, Ru, Os, r r, Re.
Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少なくとも１種を添加してな
るものであって、耐摩耗性や軟磁気特性に優れ、高飽和
磁束密度１３ｓを有するものである。It is made by adding at least one of Ni, Pd, Pt, and Hf, has excellent wear resistance and soft magnetic properties, and has a high saturation magnetic flux density of 13 s.
なお、上記組成式中、Ｇａの一部がＡＩで置換されてい
てもよく、また３ｉの一部がＧｏで置換されていてもよ
い。In addition, in the above compositional formula, a part of Ga may be substituted with AI, and a part of 3i may be substituted with Go.
本発明の軟磁性薄膜においては、各成分元素の組成比を
所定の範囲内に設定することが好ましく、この範囲を外
れると磁歪が大きくなり、磁気特性が劣化する。特に、
基本合金に添加するＴｉ、Ｃｒ、Ｍｎ、Ｚｒ、Ｎｂ、Ｍ
ｏ、’Ｔａ、Ｗ、Ｒｕ。In the soft magnetic thin film of the present invention, it is preferable to set the composition ratio of each component element within a predetermined range; if it deviates from this range, magnetostriction increases and magnetic properties deteriorate. especially,
Ti, Cr, Mn, Zr, Nb, M added to the basic alloy
o, 'Ta, W, Ru.
Ｏｓ、Ｉｒ、Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少なくと
も一種類の添加量については、０．５原子％より少ない
場合には目的とする耐摩耗性の改善効果が得られず、６
原子％より多い場合には磁気特性の劣化を招いてしまう
、但し、添加元素を２種以上使用する場合には、各添加
元素の添加量はそれぞれθ〜５原子原子箱囲内とするの
が好ましい。Regarding the addition amount of at least one of Os, Ir, Re, Ni, Pd, Pt, and Hf, if it is less than 0.5 atomic %, the desired effect of improving wear resistance cannot be obtained;
If the amount exceeds atomic %, it will cause deterioration of the magnetic properties. However, when using two or more types of additive elements, it is preferable that the amount of each additive element be within the range of θ to 5 atoms. .
上記軟磁性薄膜の製造方法としては種々の方法が考えら
れるが、なかでも真空１１１ｍ形成技術によるのが良い
。Various methods can be considered for manufacturing the above-mentioned soft magnetic thin film, but among them, the vacuum 111m formation technique is preferable.
この真空薄膜形成技術の手法としては、スパッタリング
やイオンブレーティング、真空蒸着法。The techniques for forming this vacuum thin film include sputtering, ion blasting, and vacuum evaporation.
クラスター・イオンビーム法等が挙げられる。Examples include cluster ion beam method.
また、上記各成分元素の組成を調節する方法としては、
ｉ）各成分元素を所定の割合となるように秤量し、これ
らをあらかじめ例えば高周波溶解炉等で溶解して合金イ
ンゴットを形成しておき、この合金インゴットを蒸発源
として使用する方法、ｉｉ）各成分の単独元素の蒸発源
を用意し、これら蒸発源の数で組成を制御する方法、
ｉｉｉ ）各成分の単独元素の蒸発源を用意し、これら
蒸発源に加える出力（印加電圧）を制御して蒸発スピー
ドをコントロールし組成を制御する方法、
ｉｖ）合金を蒸発源として蒸着しながら他の元素を打ち
込む方法、
等が挙げられる。In addition, as a method for adjusting the composition of each of the above-mentioned component elements, i) Weigh each component element to a predetermined ratio and melt them in advance, for example, in a high-frequency melting furnace to form an alloy ingot. , a method of using this alloy ingot as an evaporation source, ii) a method of preparing evaporation sources of a single element of each component and controlling the composition by the number of these evaporation sources, iii) a method of preparing an evaporation source of a single element of each component However, methods include controlling the output (applied voltage) applied to these evaporation sources to control the evaporation speed and composition, and iv) a method in which other elements are implanted while evaporating an alloy as an evaporation source.
なお、上述の真空薄膜形成技術等により膜付けされた軟
磁性薄膜は、そのままの状態では保磁力は若干高い値を
示し良好な軟磁気特性が得られないので、熱処理を施し
て膜の歪を除去し、軟磁気特性を改善することが好まし
い。Note that the soft magnetic thin film formed by the above-mentioned vacuum thin film forming technology has a slightly high coercive force in its original state and good soft magnetic properties cannot be obtained, so heat treatment is performed to reduce the distortion of the film. It is preferable to remove it to improve the soft magnetic properties.
このように、軟磁性ｉｉ膜の構成元素としてＦｅ。 In this way, Fe is used as a constituent element of the soft magnetic II film.
Ｑａ、ｓｉ （Ｆｅの一部をＧｏで置換したものを含
む）を基本組成とする合金にＴｉ、Ｃｒ、Ｍｎ。Ti, Cr, and Mn are added to alloys whose basic composition is Qa, si (including those in which part of Fe is replaced with Go).
Ｚｒ、Ｎｂ、Ｍｏ、Ｔａ、Ｗ、Ｒｕ、Ｏｓ、Ｉ ｒ。Zr, Nb, Mo, Ta, W, Ru, Os, Ir.
Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少なくとも１種を選び
添加し、これらの組成比を所定の範囲内に設定すること
により、耐摩耗性に非常に優れた軟磁性薄膜となる。By selectively adding at least one of Re, Ni, Pd, Pt, and Hf and setting their composition ratio within a predetermined range, a soft magnetic thin film with extremely excellent wear resistance can be obtained.
以下、本発明の具体的な実施例について説明するが、本
発明がこの実施例に限定されるものではないことは言う
までもない。Hereinafter, specific examples of the present invention will be described, but it goes without saying that the present invention is not limited to these examples.
先ず、９９．９％以上の純度を有する純鉄、電解コバル
ト、ガリウム、クロム、９９．９９９χの純度を有する
シリコン及び９４．０〜９９．９χの純度を有するＴＩ
。First, pure iron with a purity of 99.9% or more, electrolytic cobalt, gallium, chromium, silicon with a purity of 99.999χ, and TI with a purity of 94.0~99.9χ.
.
Ｃｒ、Ｍｎ、Ｚｒ、Ｎｂ、Ｍｏ、Ｔａ、Ｗ、Ｒｕ。Cr, Mn, Zr, Nb, Mo, Ta, W, Ru.
Ｏｓ、Ｉｔ、Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少なくと
も１種の添加元素をそれぞれ所定の組成比となるように
秤量し、アルゴン雰囲気中で高周波誘導加熱炉を用いて
溶解・鋳造後、さらに機械加工を行って直径１０５鶴、
厚み４ｆｉのスパッタリング用合金ターゲットを作製し
た。At least one additional element of Os, It, Re, Ni, Pd, Pt, and Hf is weighed so as to have a predetermined composition ratio, and after melting and casting using a high-frequency induction heating furnace in an argon atmosphere, Machined to a diameter of 105 cranes,
An alloy target for sputtering with a thickness of 4fi was produced.
次に、この合金ターゲットを用いて、プレーナー・マグ
ネトロン型ＲＦスパッ多リング装置により、到達ガス圧
８． ＯＸ １０−”Ｔｏｒｒ、アルゴンガス分圧４．
０Ｘ１０弓Ｔｏｒｒ、予備スパッタ１時間、スパッタ時
間４５分、投入電力３００Ｗの条件でスパッタリングを
行い、水冷した結晶化ガラス基板（商品名 ＰＥＧ３１
３０ＣＨＯＹＡ社製）上に膜厚約２μｍの薄膜を得た。Next, using this alloy target, a planar magnetron type RF sputtering device was used to reach a gas pressure of 8. OX 10-”Torr, argon gas partial pressure4.
Sputtering was performed under the conditions of 0x10 bow Torr, 1 hour of preliminary sputtering, 45 minutes of sputtering time, and input power of 300W, and a water-cooled crystallized glass substrate (product name: PEG31) was sputtered.
30 (manufactured by CHOYA)) to obtain a thin film with a thickness of approximately 2 μm.
さらに、この薄膜を、Ｉ Ｘ １０−’Ｔｏｒｒ以下の
真空下でｔなる温度で１時間焼鈍し、徐冷して軟磁性薄
膜を得た。Furthermore, this thin film was annealed for 1 hour at a temperature of t under a vacuum of I x 10-'Torr or less, and then slowly cooled to obtain a soft magnetic thin film.
上述の方法に従い、軟磁性薄膜が形成された基板を５０
０℃で１時間真空アニールを行い、室温にて作製した軟
磁性薄膜のかくサンプルについて、軟磁性薄膜の膜組成
を分析し、飽和磁束密度Ｂｓ。According to the above method, the substrate on which the soft magnetic thin film was formed was heated for 50 minutes.
The film composition of the soft magnetic thin film was analyzed for a sample of the soft magnetic thin film prepared at room temperature after vacuum annealing at 0° C. for 1 hour, and the saturation magnetic flux density Bs was determined.
抗磁力Ｈｃ、ｉ３磁率ｐｅｎ （ＩＭＨｚにおける値
）。Coercive force Hc, i3 magnetic flux pen (value at IMHz).
耐摩耗性について調べた。Abrasion resistance was investigated.
ここで、飽和磁束密度Ｂｓは試料振動磁束計（ＶＳＭ）
、抗磁力ＨｃはＢ−Ｈループトレーサ、１３Ｍ１率μは
８の字コイル型透磁率計で測定した。Here, the saturation magnetic flux density Bs is measured using a vibrating sample magnetometer (VSM).
The coercive force Hc was measured with a B-H loop tracer, and the 13M1 ratio μ was measured with a figure-8 coil type permeability meter.
また、耐摩耗性は次のようにして測定した。つまり、第
１図に示すようにダミーヘッド（１）のテープ摺動面上
に先ず、Ｃｒ下地層として０．１μｍのＣｒ薄膜層（２
）を基板加熱温度２００〜３００℃、到達ガス圧６．０
Ｘ１０−″Ｔｏｒｒ、アルゴンガス分圧４． ＯＸ １
０−’Ｔｏｒｒ、予備スパッ予備スパッタ１冫
着させた．その際ダミーヘッドを２００〜３００℃に加
熱し１０分間逆スパツタを行った．その後、所定の組成
を持つ軟磁性薄膜（３）（各サンプル）を膜厚約１０μ
ｍとなるように基板加熱温度２００〜３００℃、到達ガ
ス圧６、Ｏ Ｘ １ ０−’Ｔｏｒｒ，Ｔｏｒｒ，ス分
圧４． Ｏ Ｘ １ ０−”Ｔｏｒｒ．予備スパッタ１
時間．スパッタ時間３時間，投入電力３００Ｗの条件で
付着させたその際にもダミーヘッドを２００〜３００℃
に加熱し１０分間逆スパツタを行った。Moreover, abrasion resistance was measured as follows. That is, as shown in FIG. 1, a 0.1 μm Cr thin film layer (2
) at a substrate heating temperature of 200 to 300°C and an ultimate gas pressure of 6.0
X10-''Torr, argon gas partial pressure 4.OX 1
At 0-'Torr, one coat of preliminary sputter was deposited. At that time, the dummy head was heated to 200 to 300°C and reverse sputtering was performed for 10 minutes. After that, a soft magnetic thin film (3) (each sample) with a predetermined composition is coated with a thickness of about 10 μm.
The substrate heating temperature is 200 to 300°C, the ultimate gas pressure is 6, and the O X 1 0-' Torr, Torr, S partial pressure is 4. O X 1 0-”Torr. Preliminary sputtering 1
time. The sputtering time was 3 hours and the input power was 300 W. At that time, the dummy head was heated at 200 to 300°C.
The mixture was heated to 100 mL and reverse sputtered for 10 minutes.
ダミーヘッド摺動面上に軟磁性薄膜（３）を上述のよう
にしてスパッタリングにて形成させた後、第２図に示す
ようにヘッド台板（４）に接着剤（５）を用いて接着し
た．接着剤（５）が充分硬化した後、１インチＶＴＲ
（ソニー社製，商品名ＢＶＨ−１０００）用ヘントド
ラムに合板（４）ごと装着した．その際、ダミーヘッド
（１）の突出量が８０±５μｍとなるように調整した。After forming the soft magnetic thin film (3) on the sliding surface of the dummy head by sputtering as described above, it is bonded to the head base plate (4) using an adhesive (5) as shown in Figure 2. did. After the adhesive (5) has sufficiently hardened, attach the 1-inch VTR.
(Manufactured by Sony Corporation, product name: BVH-1000) The plywood (4) was attached to a hent drum. At that time, the amount of protrusion of the dummy head (1) was adjusted to be 80±5 μm.
上記ダミーヘッド（１）を装着した１インチＶＴＲ（ソ
ニー社製．商品名 ＢＶＨ−１０００） にセットし、
γーＦｅ，Ｏ，系テープ（ソニー社製。Set it on a 1-inch VTR (manufactured by Sony, product name BVH-1000) equipped with the above dummy head (1),
γ-Fe,O,-based tape (manufactured by Sony Corporation).
商品名 Ｖ−１６−６４Ａ）を用いて摩耗性のテストを
行った．その時のテープとダミーヘッドの相対スピード
は２ ５． ５ ９ ｍ ／ｓｅｃである．ダミーヘッ
ドはテープ走行時間５時間毎にドラムより取り外し、顕
微鏡（倍率Ｘ４００）を用いてテープ摺動面からマーカ
ー（６）までの距離を測定した。A wear test was conducted using the product (trade name: V-16-64A). The relative speed between the tape and the dummy head at that time is 2.5. 59 m/sec. The dummy head was removed from the drum every 5 hours of tape running time, and the distance from the tape sliding surface to the marker (6) was measured using a microscope (magnification: X400).
一つの試料につき６個のダミーヘッドを作り、それらの
測定値の平均値をもって摩耗度とした．テープ走行時間
は、合計１５時間である．耐摩耗値は、テープ走行時間
と摩耗量の関係を最小自乗法により算出したときの直線
の傾きである。Six dummy heads were made for each sample, and the average value of the measured values was taken as the degree of wear. The total tape running time was 15 hours. The wear resistance value is the slope of a straight line when the relationship between the tape running time and the amount of wear is calculated by the method of least squares.
各サンプルの組成と各々についての測定結果を第１表〜
第７表に示す。Table 1 shows the composition of each sample and the measurement results for each.
It is shown in Table 7.
（以下余白）
上記第１表〜第７表より、Ｆｅ、Ｇａ、５Ｌ（Ｆｅの一
部をＣｏで置換したものを含む）を基本組成とする合金
にＴｉ、Ｃｒ、Ｍｎ、Ｚｒ、Ｎｂ。(Left below) From Tables 1 to 7 above, alloys whose basic compositions are Fe, Ga, and 5L (including those in which part of Fe is replaced with Co) include Ti, Cr, Mn, Zr, and Nb.
ＭＯ，Ｔａ、Ｗ、Ｒｕ、Ｏｓ、Ｉｒ、Ｒｅ、Ｎｉ。MO, Ta, W, Ru, Os, Ir, Re, Ni.
Ｐｄ、Ｐｔ、Ｈｆの少なくとも１種の添加元素を添加す
ることによって耐摩耗性について非常に優れた軟磁性７
７４Ｂとなることがわかった。Soft magnetic properties 7 with excellent wear resistance due to the addition of at least one additive element of Pd, Pt, and Hf
It turned out to be 74B.
上述の説明からも明らかなように、軟磁性薄膜の成分元
素としてＦｅ、Ｇａ、Ｓｉ （Ｆｅの一部をＣｏで置
換したものを含む）からなる合金中にＴｉ、Ｃｒ、Ｍｎ
、Ｚｒ、Ｎｂ、Ｍｏ、Ｔａ、Ｗ。As is clear from the above explanation, Ti, Cr, and Mn are contained in an alloy consisting of Fe, Ga, and Si (including those in which a part of Fe is replaced with Co) as component elements of the soft magnetic thin film.
, Zr, Nb, Mo, Ta, W.
Ｒｕ、Ｏ’ｓ、Ｉ ｒ、Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆ
の少なくとも１種の添加元素を添加し、これらの組成比
を所定の値に設定することにより、従来の軟磁性Ｔｌｊ
膜より優れた耐摩耗性を確保することが可能になった。Ru, O's, Ir, Re, Ni, Pd, Pt, Hf
By adding at least one additional element of
It has become possible to ensure superior wear resistance than membranes.
また、センダスト合金を凌ぐ飽和磁束密度ＢＳも達成す
る；とができ、軟磁気特性にも優れている軟磁性ｆＩＭ
とすることが可能となった。It also achieves a saturation magnetic flux density BS that exceeds that of Sendust alloy; a soft magnetic fIM with excellent soft magnetic properties.
It became possible to do this.
したがって、この軟磁性薄膜を例えば磁気ヘッドのコア
材料として用いることにより、磁気記録媒体の高抗磁力
化に充分対処することができ、高品質化や高記録密度化
等記録、再生特性の良好な磁気ヘッドとすることができ
る。Therefore, by using this soft magnetic thin film as a core material of a magnetic head, for example, it is possible to sufficiently cope with the increase in coercive force of a magnetic recording medium, and to improve recording and reproduction characteristics such as higher quality and higher recording density. It can be a magnetic head.
第１図は耐摩耗性を測定するためのダミーヘッドの構成
を示す斜視図であり、第２図は軟磁性薄膜を付着したダ
ミーヘッドのヘッド台板への取り付は状態を示す模式的
な平面図である。
１・・・ダミーへラド
２・・・軟磁性薄膜
４・・・ヘッド台板Figure 1 is a perspective view showing the configuration of a dummy head for measuring wear resistance, and Figure 2 is a schematic diagram showing the state of attachment of the dummy head to which a soft magnetic thin film is attached to the head base plate. FIG. 1...Dummy head 2...Soft magnetic thin film 4...Head base plate
Claims (1)
ｂ、ｃ、ｄ、ｅはそれぞれ組成比を原子％として表し、
ＭはＴｉ、Ｃｒ、Ｍｎ、Ｚｒ、Ｎｂ、Ｍｏ、Ｔａ、Ｗ、
Ｒｕ、Ｏｓ、Ｉｒ、Ｒｅ、Ｎｉ、Ｐｄ、Ｐｔ、Ｈｆの少
なくとも１種を表す。）なる組成式で示され、その組成
範囲が ６８≦ａ＋ｂ≦８４ ０≦ｂ≦１５ １≦ｃ≦２３ ６≦ｄ≦３１ ０．５≦ｅ≦６ ａ＋ｂ＋ｃ＋ｄ＋ｅ＝１００ なる関係を満足することを特徴とする軟磁性薄膜。[Claims] Fe_aCo_bGa_cSi_dM_e (where a,
b, c, d, e each represent the composition ratio as atomic %,
M is Ti, Cr, Mn, Zr, Nb, Mo, Ta, W,
Represents at least one of Ru, Os, Ir, Re, Ni, Pd, Pt, and Hf. ), and its composition range satisfies the following relationships: 68≦a+b≦84 0≦b≦15 1≦c≦23 6≦d≦31 0.5≦e≦6 a+b+c+d+e=100 Soft magnetic thin film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15730186 | 1986-07-04 | ||
| JP61-157301 | 1986-07-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63146417A true JPS63146417A (en) | 1988-06-18 |
| JP2508462B2 JP2508462B2 (en) | 1996-06-19 |
Family
ID=15646668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18231686A Expired - Fee Related JP2508462B2 (en) | 1986-07-04 | 1986-08-02 | Soft magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2508462B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0522982A2 (en) * | 1991-07-01 | 1993-01-13 | Eastman Kodak Company | An FeGaSi-based magnetic material with Ir as an additive |
| US5198040A (en) * | 1989-09-01 | 1993-03-30 | Kabushiki Kaisha Toshiba | Very thin soft magnetic Fe-based alloy strip and magnetic core and electromagnetic apparatus made therefrom |
-
1986
- 1986-08-02 JP JP18231686A patent/JP2508462B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198040A (en) * | 1989-09-01 | 1993-03-30 | Kabushiki Kaisha Toshiba | Very thin soft magnetic Fe-based alloy strip and magnetic core and electromagnetic apparatus made therefrom |
| EP0522982A2 (en) * | 1991-07-01 | 1993-01-13 | Eastman Kodak Company | An FeGaSi-based magnetic material with Ir as an additive |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2508462B2 (en) | 1996-06-19 |
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