JPS63144268A - Characteristic measuring instrument for semiconductor element - Google Patents
Characteristic measuring instrument for semiconductor elementInfo
- Publication number
- JPS63144268A JPS63144268A JP29310586A JP29310586A JPS63144268A JP S63144268 A JPS63144268 A JP S63144268A JP 29310586 A JP29310586 A JP 29310586A JP 29310586 A JP29310586 A JP 29310586A JP S63144268 A JPS63144268 A JP S63144268A
- Authority
- JP
- Japan
- Prior art keywords
- output signal
- semiconductor element
- signal
- slope
- characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子の特性測定装置忙係シ、特に半導体
素子の特性として、入力信号の周波数に対する出力信号
の撮振が一定の傾斜内虻おいて変化する場合、その傾斜
内の偏差値を求める測定装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an apparatus for measuring characteristics of semiconductor devices, and in particular, to measuring the characteristics of semiconductor devices, in which the vibration of an output signal with respect to the frequency of an input signal is within a certain slope. The present invention relates to a measuring device for determining the deviation value within the slope when the slope changes.
従来、一定な入力電力における半導体素子の周波数と出
力電力の特性の測定は、第４図に示す回路ブロック図で
行なわれる。同図において、本測定装置は、信号発生器
１より一定な信号レベルを被測定半導体素子２へ印加し
、この素子の出力電力を検波器３により検出し、前記信
号発生器１の周波数掃引信号を表示部５の水平入力端子
へ、一方検波器３の検波信号を表示部５の画面入力端子
へ入力し、規定の周波数範囲内において、出力特性を測
定する構成となっている。Conventionally, measurement of the frequency and output power characteristics of a semiconductor element at constant input power is performed using a circuit block diagram shown in FIG. In the figure, this measuring device applies a constant signal level from a signal generator 1 to a semiconductor device under test 2, detects the output power of this device with a detector 3, and generates a frequency sweep signal from the signal generator 1. is input to the horizontal input terminal of the display section 5, and the detected signal of the detector 3 is input to the screen input terminal of the display section 5, and the output characteristics are measured within a specified frequency range.
従来用いられている特性測定装置について、測定信号が
傾斜をもって変化し、この傾斜に対し偏差を求める場合
、半導体素子が異なる毎に特性の傾きが変わる為、規格
に対する判定に多大の時間を要し、このような特性を示
す半導体素子の内部回路ｙ４整をそのつど行う場合でも
、規格内に正確に特性を調整することが困難である等の
欠点がある。With conventional characteristic measuring devices, the measurement signal changes with a slope, and when determining the deviation from this slope, the slope of the characteristics changes every time the semiconductor element is different, so it takes a lot of time to judge against the standard. Even when adjusting the internal circuit y4 of a semiconductor element exhibiting such characteristics each time, there are drawbacks such as difficulty in accurately adjusting the characteristics within the specifications.
本発明の目的は、前記欠点が解決され、従来測定が困峻
であった規定の傾斜に対する垂直方向の出力信号偏差を
容易に求めることができるようにした半導体素子の特性
測定装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device characteristic measuring device which solves the above-mentioned drawbacks and allows easy determination of output signal deviation in the vertical direction with respect to a prescribed slope, which has been difficult to measure in the past. It is in.
本発明の構成は、入力信号の周波数の変化に対して出力
信号の振幅が傾斜を有する特性を持つ高周波半導体素子
の前記傾斜特性の偏差値の判定を行う半導体素子の特性
測定装置において、前記傾斜に対する偏差値が規格内に
入っているか否かを容易に判定できるように１前記出力
信号の傾斜を補正する手段を設けたことを特徴とする。The configuration of the present invention provides a characteristic measuring device for a semiconductor device that determines a deviation value of the slope characteristic of a high frequency semiconductor device having a characteristic in which the amplitude of an output signal slopes with respect to a change in the frequency of an input signal. In order to easily determine whether or not the deviation value for the output signal is within the standard, the present invention is characterized in that a means for correcting the slope of the output signal is provided.
次に図面を参照しながら、本発明の詳細な説明する。 Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の＠１の実施例の半導体素子の特性測定
装置を示す回路ブロック図である。同図において、本実
施例の特性測定装置は、高周波発振器１の出力側に被測
定半導体素子２を接続し、この被測定半導体素子２の出
力信号検出用検波器３を接続するよう忙する。更に、高
周波発振器１からは、周波数掃引信号を制御部４へ送る
と供に、検波器３の検波信号をも制御部４へ送る経路を
有する。これら２種類の信号について、制御部４内でデ
ータの処理を施し、被測定半導体素子２の出力信号の傾
斜規格に対し、ディジタル的に補正を行い、表示部５に
補正後の特性を表示する構成とする。FIG. 1 is a circuit block diagram showing an apparatus for measuring characteristics of a semiconductor device according to a first embodiment of the present invention. In the figure, the characteristic measuring apparatus of this embodiment connects a semiconductor device to be measured 2 to the output side of a high frequency oscillator 1, and connects a detector 3 for detecting an output signal of the semiconductor device to be measured 2. Further, the high-frequency oscillator 1 has a path for sending a frequency sweep signal to the control section 4 as well as a detection signal from the wave detector 3 to the control section 4. These two types of signals are subjected to data processing in the control unit 4, digitally corrected with respect to the slope standard of the output signal of the semiconductor device under test 2, and the corrected characteristics are displayed on the display unit 5. composition.
第３図（ａ）、 （ｂ）に第１図の特性図を示す。今、
第３図（ａ）において、傾斜規格２０に対し、出力特性
２１とした時、傾斜規格２０の垂直方向に出力偏差規格
２２が存在する被測定素子２がある。この素子２は、制
御４が介在することにより、第３図（ｂ）Ｋ示すように
、傾斜規格２０が補正されて、出力特性２１の出力偏差
規格２２が直ち忙測定され得る。FIGS. 3(a) and 3(b) show the characteristic diagrams of FIG. 1. now,
In FIG. 3(a), when an output characteristic 21 is set for a slope standard 20, there is a device to be measured 2 in which an output deviation standard 22 exists in a direction perpendicular to the slope standard 20. With the intervention of the control 4, the slope standard 20 of this element 2 is corrected and the output deviation standard 22 of the output characteristic 21 can be immediately measured as shown in FIG. 3(b)K.
第２図は本発明の第２の実施例の回路ブロック図である
。同図において、本実施例の特性測定装置け、高周波信
号発振器１と、この発振器１の出力端へ接続する被測定
半導体素子２の出力信号を検出する検波器３と、高周波
信号発振器１０周周波数掃引時と前記検波器３の検波信
号とを入力する制御部１３と、この制御部１３の出力と
信号発生器１の出力とを入力する表示部５とを含み、構
成される。ここで、制御部１３は、周波数掃引時に一定
の傾斜の任意の範囲内で変化する出力信号の偏差を判定
する場合、傾斜を示す特性を水平に変更する補正機構で
ある。この制御部１３は、５個の抵抗７．８．１０．１
１．１２と、２１！のオペレーションアンプ６．９とを
有する。FIG. 2 is a circuit block diagram of a second embodiment of the present invention. In the figure, the characteristic measuring device of this embodiment includes a high frequency signal oscillator 1, a detector 3 for detecting the output signal of a semiconductor device under test 2 connected to the output terminal of the oscillator 1, and a high frequency signal oscillator 10 frequency. The control section 13 is configured to include a control section 13 that inputs the detection signal of the detector 3 during sweeping, and a display section 5 that inputs the output of the control section 13 and the output of the signal generator 1. Here, the control unit 13 is a correction mechanism that horizontally changes the characteristic indicating the slope when determining the deviation of the output signal that changes within an arbitrary range of a constant slope during frequency sweep. This control section 13 includes five resistors 7.8.10.1
1.12 and 21! It has an operational amplifier of 6.9.
今、信号発生器１の掃引信号及び被測定素子２の出力検
波信号の処理について、各信号のアナログ量をそのまま
用い、オペレーションアンプ６のｅ端子へ抵抗７を介し
て入力し、抵抗７と抵抗８とで傾斜の補正を行う。オペ
レーションアンプ９のｅ端子へアンプ６の出力信号と検
波器３の出力信号とを抵抗１０．及び抵抗１１を介して
合成し、抵抗１２全通し、表示部５の垂直軸入力端子へ
入力する。信号発生器ｌの掃引信号を表示部５の水 −
子軸入力端子へ入力し、第３図（ａ）、 （ｂ）に示す
ように、アナログ量の補正を施こした簡易な出力信号の
傾斜の補正を行う構成である。本実施例は、非常に容易
に傾斜の補正が行なうことができるという利点がある。Now, regarding the processing of the sweep signal of the signal generator 1 and the output detection signal of the device under test 2, the analog quantity of each signal is used as is, inputted to the e terminal of the operational amplifier 6 via the resistor 7, and the resistor 7 and the resistor 8 to correct the inclination. The output signal of the amplifier 6 and the output signal of the detector 3 are connected to the e terminal of the operational amplifier 9 through a resistor 10. and the resistor 11, and input it to the vertical axis input terminal of the display section 5 through the entire resistor 12. The sweep signal of the signal generator l is displayed on the display unit 5.
This is a configuration in which the slope of the output signal is corrected simply by inputting it to the slave shaft input terminal and performing analog amount correction, as shown in FIGS. 3(a) and 3(b). This embodiment has the advantage that tilt correction can be performed very easily.
以上説明したように、本発明によれば、被測定半導体素
子の出力信号の特性が定まった傾斜をもち、かつこの傾
斜に対し判定を行う場合、その傾斜に補正を施すことに
より、容易に出力信号の傾斜特性を知ることができ、ま
たＣＡＴＶＫ用いられる半導体素子に付表される様に、
傾斜をもった出力信号の調整を行う場合においても、規
格が一定な特性として表示することにより、半導体素子
の内部回路の調整を非常に容易に行うことができるとい
う効果が得られる。As explained above, according to the present invention, when the characteristics of the output signal of a semiconductor device under test have a fixed slope and a determination is made with respect to this slope, by correcting the slope, the output signal can be easily output. The slope characteristics of the signal can be known, and as shown in the semiconductor devices used in CATVK,
Even when adjusting an output signal with a slope, by displaying the standard as a constant characteristic, it is possible to achieve the effect that the internal circuit of the semiconductor element can be adjusted very easily.
第１図は本発明の第１の実施例の半導体素子の特性測定
装置を示す回路ブロック図、第２図は本発明の第２の実
施例の半導体素子の特性測定装置を示す回路ブロック図
、第３図（ａ）は半導体素子の傾斜をもつ出力信号特性
図、第３図（ｂ）は第３図（ａ）の半導体素子の補正後
の出力信号特性図、第４図は従来の半導体素子の特性測
定装置の回路ブロック図である。
ｌ・・・・・・信号発生器、２・・・・・・被測定半導
体素子、３・・・・・・検波器、４，１３・・・・・・
制御部、５・・・・・・表示部、６．９・・・・・・オ
ペレージｌナル・アン７”、 ７．８．１０゜１１、１
２・・・・・・抵抗、２０・・・・・・出力信号傾斜規
格、２１・・・・・・出力特性、２２・・・・・・規格
２０に対する出力偏差規格。
荊２図FIG. 1 is a circuit block diagram showing a semiconductor device characteristic measuring device according to a first embodiment of the present invention, FIG. 2 is a circuit block diagram showing a semiconductor device characteristic measuring device according to a second embodiment of the present invention, Figure 3(a) is an output signal characteristic diagram with a slope of a semiconductor element, Figure 3(b) is an output signal characteristic diagram after correction of the semiconductor element of Figure 3(a), and Figure 4 is a diagram of a conventional semiconductor element. FIG. 2 is a circuit block diagram of an device characteristic measuring device. l... Signal generator, 2... Semiconductor element to be measured, 3... Detector, 4, 13...
Control unit, 5...Display unit, 6.9...Operating unit 7", 7.8.10°11, 1
2... Resistance, 20... Output signal slope standard, 21... Output characteristics, 22... Output deviation standard for standard 20. 2 pngs
Claims (1)
を有する特性を持つ高周波半導体素子の前記傾斜特性の
偏差値の判定を行う半導体素子の特性測定装置において
、前記傾斜に対する偏差値が規格内に入っているか否か
を容易に判定できるように、前記出力信号の傾斜を補正
する手段を設けたことを特徴とする半導体素子の特性測
定装置。In a semiconductor device characteristic measuring device that determines a deviation value of the slope characteristic of a high frequency semiconductor device having a characteristic in which the amplitude of an output signal slopes with respect to a change in the frequency of an input signal, the deviation value with respect to the slope is within a standard. 1. An apparatus for measuring characteristics of a semiconductor device, comprising means for correcting the slope of the output signal so as to easily determine whether or not the output signal falls within the range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29310586A JPS63144268A (en) | 1986-12-08 | 1986-12-08 | Characteristic measuring instrument for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29310586A JPS63144268A (en) | 1986-12-08 | 1986-12-08 | Characteristic measuring instrument for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63144268A true JPS63144268A (en) | 1988-06-16 |
Family
ID=17790491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29310586A Pending JPS63144268A (en) | 1986-12-08 | 1986-12-08 | Characteristic measuring instrument for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63144268A (en) |
-
1986
- 1986-12-08 JP JP29310586A patent/JPS63144268A/en active Pending
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