JPS63144189A - Apparatus for liquid epitaxy - Google Patents
Apparatus for liquid epitaxyInfo
- Publication number
- JPS63144189A JPS63144189A JP28761086A JP28761086A JPS63144189A JP S63144189 A JPS63144189 A JP S63144189A JP 28761086 A JP28761086 A JP 28761086A JP 28761086 A JP28761086 A JP 28761086A JP S63144189 A JPS63144189 A JP S63144189A
- Authority
- JP
- Japan
- Prior art keywords
- furnace core
- temperature
- core tube
- crucible
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title abstract description 3
- 238000000407 epitaxy Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 claims abstract 2
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
るつぼの下方に補助し−タを付設することにより炉芯管
内での径方向の温度分布制御を可能ならしめる。[Detailed Description of the Invention] [Summary] By attaching an auxiliary heater below the crucible, it is possible to control the temperature distribution in the radial direction within the furnace core tube.
本発明は液相エピタキシャル成長（Ｌ Ｐ Ｅ）装置、
特にその加熱装置の改良に関する。The present invention provides a liquid phase epitaxial growth (LPE) apparatus,
In particular, it relates to improvements in the heating device.
従来から結晶の育成温度を制御するために炉芯管周囲に
配設した抵抗加熱ヒータを例えば３分割し、炉芯管の縦
方向の温度分布をできるだけ均一に制御することが行わ
れている。Conventionally, in order to control the crystal growth temperature, a resistance heater disposed around the furnace core tube is divided into three parts, for example, to control the temperature distribution in the longitudinal direction of the furnace core tube as uniformly as possible.
この方法によると縦方向の温度制御は比較的正確に行う
ことができるが結晶を育成すべき基板（ウェハ）の径方
向の温度分布は制御できない。According to this method, temperature control in the longitudinal direction can be performed relatively accurately, but the temperature distribution in the radial direction of the substrate (wafer) on which the crystal is to be grown cannot be controlled.
上述の如〈従来のＬＰＥ装置においては炉芯管の周囲に
設けた抵抗加熱コイルにより育成温度の制御を行ってい
るため、炉芯中央部と炉芯周壁部との間に温度勾配が発
生しく炉芯中央部が低温となる）、従って結晶育成温度
を正確に制御することが困難であった。As mentioned above, in conventional LPE equipment, the growth temperature is controlled by a resistance heating coil installed around the furnace core tube, so a temperature gradient does not occur between the center of the furnace core and the peripheral wall of the furnace core. (The central part of the furnace core is at a low temperature), making it difficult to accurately control the crystal growth temperature.
本発明の目的は炉芯の径方向の温度制御を行い同方向の
温度分布を均一にし得るようにすることにある。An object of the present invention is to control the temperature in the radial direction of the furnace core to make the temperature distribution in the same direction uniform.
上記目的を達成するために本発明によれば、るつぼの下
方に補助ヒータが付設される。According to the present invention, in order to achieve the above object, an auxiliary heater is provided below the crucible.
上記補助ヒータは従来の炉芯管周囲のヒータによる縦方
向の温度逝去とは別に、炉芯管の径方向の温度制御を行
うことができ、その結果径方向の温度分布を均一にする
ことができる。The above-mentioned auxiliary heater can control the temperature in the radial direction of the furnace core tube, in addition to the conventional temperature control in the vertical direction by the heater around the furnace core tube, and as a result, it is possible to make the temperature distribution in the radial direction uniform. can.
第１図は本発明のＬＰＥ装置の一実施例を示すもので、
炉芯管１７の内部にはるつぼ台１５上に基板あるいはウ
ェハ１０に育成すべき結晶物質を含む溶液１９を入れた
白金るつぼ１１が載置される。ウェハ１０は回転自在な
ホルダ１２により保持され、このホルダ１２を上下動さ
せることによりるつぼ１１内に出し入れすることができ
る。FIG. 1 shows an embodiment of the LPE device of the present invention.
Inside the furnace core tube 17, a platinum crucible 11 containing a solution 19 containing a crystal material to be grown on a substrate or wafer 10 is placed on a crucible stand 15. The wafer 10 is held by a rotatable holder 12, and can be taken in and out of the crucible 11 by moving the holder 12 up and down.
溶液１９は例えば磁気バルブガーネットの構成元素の配
化物（ＳｍｚＯｚ 、 Ｙｚ０３． ＦｅｇＯ１＋ Ｇ
ａｔｅ３など）とフラックスのＰｂＯとＢｔＣｈから成
る融液（メルト）であり９００°〜１０００℃の高温状
態に保持される。The solution 19 is, for example, an arrangement of constituent elements of magnetic bulb garnet (SmzOz, Yz03.FegO1+G
ate3, etc.) and fluxes PbO and BtCh, and is maintained at a high temperature of 900° to 1000°C.
この融液を過冷却状態にし、基板１０を浸漬すると、基
板上に磁気バブルガーネット膜がエピタキシャル成長す
る。When this melt is supercooled and the substrate 10 is immersed, a magnetic bubble garnet film is epitaxially grown on the substrate.
基板ホルダ１２により水平に保持され、融液中で回転せ
しめられる。これによりウェハ内での膜厚、組成の変動
を小さく抑えることができる。The substrate is held horizontally by a substrate holder 12 and rotated in the melt. This makes it possible to suppress variations in film thickness and composition within the wafer.
上記の加熱温度制御は炉芯管１７の周囲に配設したコイ
ルヒータ１３により行われる。このヒータ１３は上述の
如（炉芯管１７の縦方向の温度分布が均一となるように
例えば３個のグループＧ、。The heating temperature control described above is performed by the coil heater 13 disposed around the furnace core tube 17. The heaters 13 are arranged as described above (for example, in groups G of three so that the temperature distribution in the longitudinal direction of the furnace core tube 17 is uniform).
Ｇｚ 、Ｇ！に分割され各々独立的に制御可能となっ
ている。つまりヒータグループａｔ、Ｇｘ。Gz, G! It is divided into two parts, each of which can be controlled independently. In other words, heater groups at, Gx.
Ｇ、を適当に制御することにより炉芯管１７内部、即ち
るつぼ１１内部の溶液１９の縦方向の温度分布を均一に
することができる。以上の構成は公知である。By appropriately controlling G, the vertical temperature distribution of the solution 19 inside the furnace tube 17, that is, inside the crucible 11, can be made uniform. The above configuration is publicly known.
本発明によれば、るつぼ１９の下方に別の補助ヒータ２
５が付設される。補助ヒータ２５は前述のヒータ１３と
同様の抵抗加熱コイルヒータあるいは平面ヒータあるい
はその他のどのようなヒータでもよい。補助ヒータ２５
はるつぼ１９の底面に直接接触させてもよいし、あるい
は伝熱性の台座２７を介してとりつけてもよい。尚、補
助ヒータ２５もヒータ１３と同様に径方向にいくつかに
分割してグループ毎に独立制御するようにしてもよい。According to the invention, another auxiliary heater 2 is provided below the crucible 19.
5 is attached. The auxiliary heater 25 may be a resistance heating coil heater similar to the heater 13 described above, a plane heater, or any other type of heater. Auxiliary heater 25
It may be brought into direct contact with the bottom surface of the crucible 19, or it may be attached via a heat conductive pedestal 27. Note that, like the heater 13, the auxiliary heater 25 may also be divided into several parts in the radial direction and independently controlled for each group.
その分割の方法は例えばヒータを同心円状に配設した３
個のリングヒータ形状とすればよい。The division method is, for example, 3 heaters arranged concentrically.
It is sufficient that the ring heater is shaped as a ring heater.
補助ヒータ２５は溶液１９の周辺部温度より低温になり
がちな中心部温度の温度補正（加熱）を行うものである
。The auxiliary heater 25 is used to correct (heat) the temperature of the center of the solution 19, which tends to be lower than the temperature of the surrounding area.
第２図は本発明の効果を示すもので同図（ａ）は本発明
によりるつぼの底部に補助ヒータを設けた場合、また同
図（ｂ）は従来技術（底部補助ヒータを設けない場合）
における、夫々炉芯管１１の径方向の温度分布を測定し
たものである。炉芯管の径は８ｃ１１、液面は約６ｃｍ
である。第２図（ａ）。Fig. 2 shows the effect of the present invention. Fig. 2 (a) shows the case where an auxiliary heater is provided at the bottom of the crucible according to the present invention, and Fig. 2 (b) shows the conventional technique (when no auxiliary heater is provided at the bottom).
The temperature distribution in the radial direction of the furnace core tube 11 is measured in each case. The diameter of the furnace core tube is 8c11, and the liquid level is approximately 6cm.
It is. Figure 2(a).
（ｂ）から明らかな如く、補助ヒータ２５を設けること
により径方向の温度分布はほぼ均一になり、従来技術に
比しはるかに良好な温度制御が行える。As is clear from (b), by providing the auxiliary heater 25, the temperature distribution in the radial direction becomes almost uniform, and much better temperature control can be achieved than in the prior art.
尚、第２図（ａ）、（ｂ）において右側に示すグラフは
炉芯管の中心における縦方向の温度分布を参考に示すも
ので、炉芯管１１周囲の分割ヒータ１３により温度ばら
つきΔＴを±１．０℃の範囲内に抑えることができるこ
とを示す。The graphs shown on the right side in FIGS. 2(a) and 2(b) are for reference to the temperature distribution in the longitudinal direction at the center of the furnace core tube, and the temperature variation ΔT is reduced by the divided heater 13 around the furnace core tube 11. This shows that it is possible to suppress the temperature within the range of ±1.0°C.
第３図は実際の結晶育成中の溶液の温度変化状況を示す
もので同図（ａ）に示す本発明によれば同図（ｂ）に示
す従来のものに比しはるかに温度変化が小さいことがわ
かる。即ち、本発明ではΔＴ≦０．５℃であるのに対し
、従来技術ではΔＴｚ２℃であった。Figure 3 shows the temperature change of the solution during actual crystal growth. According to the present invention shown in figure (a), the temperature change is much smaller than that of the conventional solution shown in figure (b). I understand that. That is, in the present invention, ΔT≦0.5°C, whereas in the prior art, ΔTz was 2°C.
以上に記載した如く本発明によれば、るつぼ内の溶液の
温度分布は縦方向にも径方向にもほぼ均一に保持される
ので、結晶育成中の溶液温度変化を小さくすることがで
き育成が容易かつ正確に行える。As described above, according to the present invention, the temperature distribution of the solution in the crucible is maintained substantially uniform both in the longitudinal direction and in the radial direction, so that changes in the solution temperature during crystal growth can be reduced and the growth can be improved. Can be done easily and accurately.
第１図は本発明に係る液相エピタキシャル成長装置の図
解図、第２図は溶液の温度分布特性を示す線図で、同図
（ａ）は本発明、同図（ｂ）は従来技術を夫々示し、第
３図は育成中の溶液温度変化状況を示す線図で、同図（
ａ）は本発明、同図（ｂ）は従来技術を夫々示す。
１１・・・るつぼ、 １３・・・ヒータ、１７
・・・炉芯管、 ２５・・・補助ヒータ。FIG. 1 is a schematic diagram of the liquid phase epitaxial growth apparatus according to the present invention, and FIG. 2 is a diagram showing the temperature distribution characteristics of the solution. Figure 3 is a diagram showing the change in solution temperature during growth.
Figure a) shows the present invention, and figure (b) shows the prior art. 11... Crucible, 13... Heater, 17
...Furnace core tube, 25...Auxiliary heater.
Claims (1)
ぼ（１１）の下方に補助ヒータ（２５）を設けたことを
特徴とする液相エピタキシャル成長装置。A liquid phase epitaxial growth apparatus characterized in that an auxiliary heater (25) is provided in a furnace core tube (17) below a crucible (11) for a solution containing a crystalline substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28761086A JPS63144189A (en) | 1986-12-04 | 1986-12-04 | Apparatus for liquid epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28761086A JPS63144189A (en) | 1986-12-04 | 1986-12-04 | Apparatus for liquid epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63144189A true JPS63144189A (en) | 1988-06-16 |
Family
ID=17719498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28761086A Pending JPS63144189A (en) | 1986-12-04 | 1986-12-04 | Apparatus for liquid epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63144189A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472859U (en) * | 1990-11-05 | 1992-06-26 | ||
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815218A (en) * | 1981-07-20 | 1983-01-28 | Hitachi Ltd | Liquid phase epitaxial growth apparatus |
-
1986
- 1986-12-04 JP JP28761086A patent/JPS63144189A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815218A (en) * | 1981-07-20 | 1983-01-28 | Hitachi Ltd | Liquid phase epitaxial growth apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472859U (en) * | 1990-11-05 | 1992-06-26 | ||
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
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