JPS63139237A - Apparatus for inspecting flaw of semiconductor substrate - Google Patents
Apparatus for inspecting flaw of semiconductor substrateInfo
- Publication number
- JPS63139237A JPS63139237A JP61287122A JP28712286A JPS63139237A JP S63139237 A JPS63139237 A JP S63139237A JP 61287122 A JP61287122 A JP 61287122A JP 28712286 A JP28712286 A JP 28712286A JP S63139237 A JPS63139237 A JP S63139237A
- Authority
- JP
- Japan
- Prior art keywords
- flaw
- wafer
- defect
- inspection
- adhesion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 title claims description 5
- 238000007689 inspection Methods 0.000 claims abstract description 45
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims description 56
- 235000012431 wafers Nutrition 0.000 claims description 37
- 239000000284 extract Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 208000003464 asthenopia Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は半導体基板の欠陥検査装置に関するもので、％
Ｋ ２枚の半導体ウェハを接着させて得られた接合製
半導体基板の欠陥検査に使用されるものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a defect inspection device for semiconductor substrates.
K This is used for defect inspection of a bonded semiconductor substrate obtained by bonding two semiconductor wafers together.
（従来の技術）
接合型半導体ウェハーの未接着欠陥の有無検査は、従来
、人間の目視判断によって行なわれている・即ち撮像手
段として赤外ＴＶカメラを用い、人間が目視判断可能な
ようにＩＴＶモニタ罠投影する。また、外乱による未接
庸欠陥の不鮮明さを補正するために、赤外ＴＶカメラの
７工−デイング補正機能、赤外照明の光量調整機能、受
台塁半導体ウェハーの全体あるいは一部分の画像強調機
能等を操作しながら未接着欠陥を抽出し、欠陥検査を実
施している。(Prior art) Inspection of the presence or absence of unbonded defects on bonded semiconductor wafers has conventionally been carried out by human visual judgment. In other words, an infrared TV camera is used as an imaging means, and an ITV Monitor trap projection. In addition, in order to correct the blurring of uncontacted defects caused by external disturbances, we also have an infrared TV camera's 7-Ding correction function, an infrared illumination light intensity adjustment function, and an image enhancement function for the entire or part of the pedestal semiconductor wafer. While operating the machine, unbonded defects are extracted and defect inspection is carried out.
（発明が解決しようとする問題点）
従来の作業者による接着ウェハーの未接着欠陥の欠陥検
査方式によると、先に述ぺたように、外乱を補正するた
めに種々の操作を行ない、多くの検査時間を要している
。またこのような作業は作業者の眼精疲労を招くと同時
に作業の単純性もあり、長時間の作業においては著しい
生産性の低下をもたらすことになるし、を九、製品の品
質低下へも影響を及ぼすことになる。(Problems to be Solved by the Invention) According to the conventional defect inspection method for unbonded defects on bonded wafers by an operator, as mentioned above, various operations are performed to correct for disturbances, and many inspections are required. It takes time. In addition, such work causes eye strain for workers, and the simplicity of the work results in a significant drop in productivity over long hours of work. It will have an impact.
接着ウェハーの検査が少量生産の段階では、作業管理を
徹底すれば目視検査にて可能であるが、製品のルーチン
化ならびに多量生産においては、欠陥検査の自動化が必
要となってくる。At the stage of small-volume production, bonded wafers can be inspected visually if the work is properly managed, but as products become more routine and mass-produced, automation of defect inspection becomes necessary.
本発明は、被検査ウェハーの欠陥検査作業を、作業者に
よる手作業から自動化するための手段として、欠陥検査
装置を提供し、作業者を単純作業から解放すると共に、
欠陥検査時間の短縮化による生産性の向上、高品質の製
品生産を可能化することを目的とする。The present invention provides a defect inspection device as a means for automating defect inspection work on wafers to be inspected from manual work by workers, and frees workers from simple tasks.
The purpose is to improve productivity by shortening defect inspection time and enable the production of high-quality products.
［発明の構成］
（問題点を解決する几めの手段と作用）本発明は、被検
査ウェハーに赤外線を照射することによって、該ウェハ
ーから透過し次赤外触を光電変換手段（念とえは赤外Ｔ
Ｖ左カメラを用いて検出し、被検査ウェハーの画像情報
として記憶しておき、その記憶された画像情報からウェ
ハー欠陥を検出し、予め設定された検査条件（未接着欠
陥の形状寸法、検査の有効領域など）と検出結果値を比
較判定し、正規のウェハー欠陥を抽出し、欠陥検査の良
否結果を算出するようＫＬ＋ｔものである。[Structure of the Invention] (Elaborate Means and Effects for Solving Problems) The present invention irradiates infrared rays onto a wafer to be inspected, transmits the infrared rays from the wafer, and converts the infrared rays into photoelectric conversion means (for example, is infrared T
Detected using the V left camera and stored as image information of the wafer to be inspected, wafer defects are detected from the stored image information, and preset inspection conditions (shape and size of unbonded defects, inspection This is a KL+t system that compares and determines the detection result value (effective area, etc.), extracts a regular wafer defect, and calculates the pass/fail result of the defect inspection.
（実施列）
以下図面を参照して本発明の一実施例を説明する。第１
図において接着ウェハーｌに照射される赤外線２は赤外
照明装置（ハロゲンランプ便用）３によって発生される
。そして、赤外＠２は全反射ミラー４に供給され、その
供給された赤外−２は全反射され、接着ウェハー１に導
かれ、その多くは接着ウェハー１の内部を透過し、透過
赤外線５として表われ、光電変換部６の赤外ＴＶ左カメ
ラ到達する。(Embodiment) An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, infrared rays 2 irradiated onto the bonded wafer 1 are generated by an infrared illumination device 3 (for use with halogen lamps). Then, the infrared rays @2 are supplied to the total reflection mirror 4, and the supplied infrared rays -2 are totally reflected and guided to the bonded wafer 1, most of which passes through the inside of the bonded wafer 1, and the transmitted infrared rays 5 appears and reaches the infrared TV left camera of the photoelectric conversion section 6.
第２図は、接着ウェハー１の内部を透過する赤外線の状
態を表わしたもので、未接着欠陥７に達した赤外線２は
その欠陥のために反射され、例えば反射赤外線８となっ
て、透過赤外線としては弱められ、接着ウェハー１の外
部にほとんど表われなくなる。このような接着ウェハー
Ｊの赤外線透過特性を利用することによりて、第３図に
示すように、未接着欠陥は例えばＡ１ 、Ａ、、ｎ、
＄Ｂ意ｓＢ３として、正常に接着された部分に比して暗
く表われ、区別することが可能となる。FIG. 2 shows the state of infrared rays passing through the inside of the bonded wafer 1. Infrared rays 2 that reach an unbonded defect 7 are reflected by the defect, and become reflected infrared rays 8, for example, and transmitted infrared rays. As a result, the bonded wafer 1 is weakened and hardly appears on the outside of the bonded wafer 1. By utilizing such infrared transmission characteristics of the bonded wafer J, as shown in FIG.
As $B-sB3, it appears darker than the normally bonded part, making it possible to distinguish it.
第１図にて、接着ウェハー１を透過した赤外線５は光電
変換部６の赤外ビジコンの撮像面に照射し、光電変換さ
れ、量子化画像として入力し、画像記憶１５ＪＫ格納さ
れる。画像記憶部９に格納され次画像情報は、制御部７
１１７からの指令に基づき、順次に欠陥検出部１６に取
込まれ、第３図の被検査領域Ｊｌ内の接着ウェハー１の
未接着欠陥Ａ工。In FIG. 1, the infrared rays 5 transmitted through the bonded wafer 1 are irradiated onto the imaging surface of the infrared vidicon of the photoelectric conversion unit 6, photoelectrically converted, inputted as a quantized image, and stored in the image memory 15JK. The next image information stored in the image storage section 9 is sent to the control section 7.
117, unbonded defects A of the bonded wafer 1 within the inspection area Jl of FIG.
Ａ！ ＋ Ｂｌ ｒ ＢＨ＊ ＢＨの検出処理を行
なう。欠陥検出部１０で検出された未接着欠陥は欠陥検
査良否判定部１２に送られる。未接着欠陥の形状寸法基
準値Ｂｒは欠陥形状設定ｓ１３に予め設定されている。A! + Bl r BH* Perform BH detection processing. The unbonded defects detected by the defect detection section 10 are sent to the defect inspection quality determination section 12. The shape and size reference value Br of the unbonded defect is set in advance in the defect shape setting s13.
また接着ウェハー１の欠陥検査設定領域（φ１）１４は
、欠陥検査領域設定部１５に設定され、形状寸法基準値
Ｂｒと共に、欠陥検査良否判定部１２に取込まれ、正規
の未接着欠陥を抽出する検査条件として用いられる。例
えば、形状寸法基準値Ｂｒとして、第３図の未接着欠陥
Ｂｓよシ大きく、Ｂ、、Ｂ、より小さい値が設定されて
いたとすれば、欠陥検査良否判定部１２の判定結果とし
て、Ｂ、、Ｂ、が抽出され、これが正規の未接着欠陥と
して検出される。このようにして、接合型半導体ウェハ
ーの欠陥検査が実施されるものである。In addition, the defect inspection setting area (φ1) 14 of the bonded wafer 1 is set in the defect inspection area setting unit 15, and is taken into the defect inspection quality determination unit 12 together with the shape and dimension reference value Br to extract regular unbonded defects. It is used as an inspection condition. For example, if the shape and dimension reference value Br is set to a value that is larger than the unbonded defect Bs in FIG. ,B, is extracted and detected as a regular unbonded defect. In this way, defect inspection of the bonded semiconductor wafer is carried out.
以上述べた本発明の接合型半導体ウェハー用欠陥検査装
置によれは、下記の利点が得られる。The bonding type semiconductor wafer defect inspection apparatus of the present invention described above provides the following advantages.
ｌ）接着ウェハーの検査作業は、従来作業者が行なりて
いたが、本発明によれば、予め未接着欠陥の形状寸法な
らびに接着ウェハーの欠陥検査設定領域を設定すれば、
自動的に未接着欠陥を検査することが可能とな９、作業
者による長時間の単純作業が排除される。l) Inspection of bonded wafers has conventionally been carried out by an operator, but according to the present invention, if the dimensions of unbonded defects and the defect inspection setting area of bonded wafers are set in advance,
It is possible to automatically inspect unbonded defects9, eliminating long and simple work by the operator.
２）検査作業が自動化されることにより、従来発生して
いた作業者の眼精疲労等による生産性の低下あるいは、
製品の品質低下は著しく改善される。2) Due to the automation of inspection work, productivity may be reduced due to eye strain of workers, which previously occurred, or
Product quality deterioration is significantly improved.
３）何にも増して、従来、作業者が実施していた検査作
業を機械化する手段を提供し、作業者を検査作業から開
放させる意義は大きい。3) Above all else, it is of great significance to provide a means to mechanize the inspection work that was conventionally performed by workers, thereby freeing the workers from the inspection work.
［発明の効果コ
以上説明した如く本発明によれば、被検査ウェハーの欠
陥検査作業を作業者による手作業から自動化するための
手段として、欠陥検査作業を提供し、作業者を単純作業
から解放すると共に、欠陥検査時間の短縮化による生産
性の向上、高品質の製品生産を可能化できるものである
。[Effects of the Invention] As explained above, according to the present invention, the defect inspection work is provided as a means for automating the defect inspection work of the wafer to be inspected from manual work by the worker, thereby freeing the worker from the simple work. At the same time, productivity can be improved by shortening defect inspection time, and high quality products can be produced.
第１図は本発明の一実施的の構成図、第２図及び第３図
は同構成の一部作用説明図である。
Ｊ・・・接着ウェハー（接合型半導体ウェハー）、３・
・・赤外照明装置、４・・・全反射ミラー、６・・・光
電変換部（赤外ＴＶカメラ）、９・・・画像記憶部、ｌ
Ｏ・・・制御部、λ２・・・欠陥検査良否判定部、１３
・・・欠陥形状練定部、１４・・・欠陥検査設定領域、
Ｊ５・・・欠陥検査領域設定部、１６・・・欠陥検出部
。
第２図
第３図FIG. 1 is a configuration diagram of one embodiment of the present invention, and FIGS. 2 and 3 are partial operation explanatory diagrams of the same configuration. J...Adhesive wafer (bonded semiconductor wafer), 3.
... Infrared illumination device, 4... Total reflection mirror, 6... Photoelectric conversion unit (infrared TV camera), 9... Image storage unit, l
O...Control unit, λ2...Defect inspection quality determination unit, 13
... Defect shape training section, 14... Defect inspection setting area,
J5... Defect inspection area setting section, 16... Defect detection section. Figure 2 Figure 3
Claims (2)
ハーからの透過赤外線を検出して量子化画像として入力
する画像入力手段と、この画像入力手段によって得られ
たウェハー画像情報から前記ウェハーの欠陥を検出する
欠陥検出手段と、該手段による検出結果と予め設定され
た検査条件とを比較し正規のウェハー欠陥を抽出する欠
陥検査良否判定手段とを具備したことを特徴とする半導
体基板の欠陥検査装置。(1) Image input means for irradiating a semiconductor wafer to be inspected with infrared rays, detecting transmitted infrared rays from the wafer, and inputting the detected infrared rays as a quantized image, and detecting defects in the wafer from the wafer image information obtained by the image input means. A defect inspection device for semiconductor substrates, comprising: a defect detection means for detecting defects; and a defect inspection quality determination means for comparing detection results by the means with preset inspection conditions to extract regular wafer defects. .
ハーを直接接着して得た接合型半導体ウェハーであり、
前記欠陥検査良否判定手段は、前記接合型半導体ウェハ
ーの未接着欠陥の形状寸法を設定する欠陥形状設定手段
と前記未接着欠陥有無の検査領域を設定する欠陥検査領
域設定手段を用いて、前記欠陥検出手段によって検出さ
れた未接着欠陥の形状寸法を比較判定し、正規の未接着
欠陥を抽出するものであることを特徴とする特許請求の
範囲第１項に記載の半導体基板の欠陥検査装装置。(2) The semiconductor wafer to be inspected is a bonded semiconductor wafer obtained by directly bonding two semiconductor wafers,
The defect inspection quality determination means uses a defect shape setting means for setting the shape and size of the unbonded defect of the bonded semiconductor wafer and a defect inspection area setting means for setting an inspection area for the presence or absence of the unbonded defect. The semiconductor substrate defect inspection apparatus according to claim 1, which compares and determines the shape and size of the unbonded defect detected by the detection means and extracts a regular unbonded defect. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61287122A JPS63139237A (en) | 1986-12-02 | 1986-12-02 | Apparatus for inspecting flaw of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61287122A JPS63139237A (en) | 1986-12-02 | 1986-12-02 | Apparatus for inspecting flaw of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63139237A true JPS63139237A (en) | 1988-06-11 |
Family
ID=17713353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61287122A Pending JPS63139237A (en) | 1986-12-02 | 1986-12-02 | Apparatus for inspecting flaw of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63139237A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233947A (en) * | 1988-07-23 | 1990-02-05 | Mitsubishi Monsanto Chem Co | Apparatus and method for measuring ion implanted amount using infrared light scattering |
| WO2003065099A1 (en) * | 2002-01-29 | 2003-08-07 | Nippon Electric Glass Co., Ltd. | Optical device and method of manufacturing the optical device |
| CN102749334A (en) * | 2011-04-19 | 2012-10-24 | 芝浦机械电子装置股份有限公司 | Substrate testing device, substrate testing method, and method for adjusting substrate testing device |
| KR20200086197A (en) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | wafer measurement apparatus |
-
1986
- 1986-12-02 JP JP61287122A patent/JPS63139237A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233947A (en) * | 1988-07-23 | 1990-02-05 | Mitsubishi Monsanto Chem Co | Apparatus and method for measuring ion implanted amount using infrared light scattering |
| WO2003065099A1 (en) * | 2002-01-29 | 2003-08-07 | Nippon Electric Glass Co., Ltd. | Optical device and method of manufacturing the optical device |
| CN102749334A (en) * | 2011-04-19 | 2012-10-24 | 芝浦机械电子装置股份有限公司 | Substrate testing device, substrate testing method, and method for adjusting substrate testing device |
| CN102749334B (en) * | 2011-04-19 | 2014-08-27 | 芝浦机械电子装置股份有限公司 | Substrate testing device, substrate testing method, and method for adjusting substrate testing device |
| KR20200086197A (en) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | wafer measurement apparatus |
| JP2020112367A (en) * | 2019-01-08 | 2020-07-27 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Wafer inspection device |
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