JPS63138794A - Die bonding for semiconductor laser element - Google Patents
Die bonding for semiconductor laser elementInfo
- Publication number
- JPS63138794A JPS63138794A JP61286480A JP28648086A JPS63138794A JP S63138794 A JPS63138794 A JP S63138794A JP 61286480 A JP61286480 A JP 61286480A JP 28648086 A JP28648086 A JP 28648086A JP S63138794 A JPS63138794 A JP S63138794A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- mount
- gold
- die bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 18
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 abstract description 10
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体レーザ素子に関する＠
〔従来の技術〕
従来、半導体レーザ素子のダイボンディング方法として
は、熱膨張係数が半導体レーザ素子に近く、熱伝導率が
比較的高いシリコンを平面研磨したマウント上に、イン
ジウムや金−スズ合金を用いて半導体レーザ素子をダイ
ボンディングする方法が知られていた０
〔発明が解決しようとする問題点〕
しかし、従来の半導体レーザ素子ダイボンディング方法
は、マウントとの接着に用いたインジウムや金−スズ合
金が半導体レーザ素子側面に盛り上がり、半導体レーザ
素子の出射端面を汚染してしまう不良が生じたり、また
電気的な短絡を起こしてしまう不良が生じる問題点を有
していた０そこで、本発明は従来のこのような問題点を
解決するため、半導体レーザ素子の接着に用いるインジ
ウムや金−スズ合金が半導体レーザ累子側面に盛り上が
らない半導体レーザ素子ダイボンディング方法を得るこ
とを目的としている。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor laser device @ [Prior Art] Conventionally, as a die bonding method for a semiconductor laser device, a die bonding method for a semiconductor laser device has a thermal expansion coefficient close to that of a semiconductor laser device and There was a known method of die-bonding a semiconductor laser element using indium or a gold-tin alloy onto a surface-polished silicon mount, which has relatively high conductivity.0 [Problems to be Solved by the Invention] However, In the conventional semiconductor laser device die bonding method, the indium or gold-tin alloy used for adhesion to the mount bulges on the side of the semiconductor laser device, resulting in defects that contaminate the emission end face of the semiconductor laser device, and electrical problems. Therefore, in order to solve these conventional problems, the present invention aims to solve the problem that indium and gold-tin alloys used for bonding semiconductor laser elements are used to bond semiconductor laser elements. It is an object of the present invention to obtain a semiconductor laser device die bonding method that does not cause swelling on the side surface of the resistor.
上記問題点を解決するために、本発明の半導体レーザ素
子ダイボンディング方法は、半導体レーザ素子の寸法よ
りも小さな凸部をマウントに形成し、前記凸部に前記半
導体レーザ素子をボンディングすることを特徴とする。In order to solve the above problems, the semiconductor laser device die bonding method of the present invention is characterized in that a convex portion smaller than the size of the semiconductor laser device is formed on the mount, and the semiconductor laser device is bonded to the convex portion. shall be.
以下に本発明の実施例を図面にもとづいて説明する。第
１因において、マウント１４はシリコンをメサエッチし
て作成したものであり、放熱板１５と接着をされている
。Embodiments of the present invention will be described below based on the drawings. Regarding the first factor, the mount 14 is made by mesa-etching silicon and is bonded to the heat sink 15.
そして、マウント１４に活性層１２をマウント側に向け
た半導体レーザ素子１１を金−スズハンダ１３を用いて
マウント１４の凸部にグイボンディングし、金Ｉ！１６
をボンディングしたものであるＯ
第１図に示すように、半導体レーザ素子１１とマウント
１４とは、半導体レーザ素子１１の周辺部では接触して
いない。そのため・半導体レーザ素子１１のグイボンデ
ィング時にはみ出した金−スズハンダ１５はマウント１
４の凸部周辺にたまり、半導体レーザ素子１２の側面に
盛り上がることがない。Then, the semiconductor laser element 11 with the active layer 12 facing the mount 14 is bonded to the convex portion of the mount 14 using gold-tin solder 13, and gold I! 16
As shown in FIG. 1, the semiconductor laser element 11 and the mount 14 are not in contact with each other around the semiconductor laser element 11. Therefore, the gold-tin solder 15 that protrudes when bonding the semiconductor laser element 11 is removed from the mount 1.
The particles do not accumulate around the convex portions 4 and do not bulge on the side surfaces of the semiconductor laser element 12.
しかし、従来の半導体レーザ素子のダイボンディング方
法では、マウント２４上への半導体レーザ素子２１のグ
イボンディング時にはみ出した金−スズハンダ２３は半
導体レーザ素子２１の側面に盛り上がり、半導体レーザ
の出射端面の汚染を引き起こしたり、電気的な短絡を引
き起こしたりする原因となる・
そのため、放熱面での無理を承知で・活性層をマウント
から遠ざけた向きで半導体レーザ素子をダイボンディン
グする方法も考えられるが、放熱効率が大きく低下する
ため、大出力レーザには適用できない上、小出力レーザ
でも大幅な信頼性低下を免れない０
それゆえ、従来は歩留りの低下を起こしても、第２図に
示すようなダイボンディング方法を用いねばならなかっ
た。However, in the conventional die bonding method for a semiconductor laser element, the gold-tin solder 23 that protrudes when the semiconductor laser element 21 is bonded onto the mount 24 bulges on the side surface of the semiconductor laser element 21, causing contamination of the emission end face of the semiconductor laser. Therefore, it is possible to die-bond the semiconductor laser element with the active layer away from the mount, although this may be difficult in terms of heat dissipation. Because of the large decrease in the method had to be used.
しかし、ダイボンディング工程での不良は、半導体レー
ザを完成品に仕上げてから検査せねば分らないため、不
良の中でも最も性質の悪い不良であり、コスト高の大き
な原因となる口
だが、本発明の半導体レーザ素子のダイボンディング方
法によれば、このような不都合は生ぜず・高い歩留りを
得ることができる。However, defects in the die bonding process cannot be detected until the semiconductor laser is inspected after it is finished as a finished product, so it is the worst of all defects and is a major cause of high costs. According to the die bonding method for semiconductor laser elements, such inconveniences do not occur and a high yield can be obtained.
また、本発明のダイボンディング方法に用いるマウント
は放熱面の効率を考慮し、順メサ方向に成形したものが
好ましく、また熱膨張係数が半導体レーザ素子に近いも
のが良い・しかも熱伝導率が大きく、コスト的に使いや
すいものが最善の材料であるが、この全ての条件を満た
すものとしてシリコンがある。もちろんその他の材料で
も本発明の半、導体レーザ素子のダイボンディング方法
を用いることができるが、理想的にはシリコンを用いる
のが最善である。In addition, the mount used in the die bonding method of the present invention should preferably be molded in the forward mesa direction in consideration of the efficiency of the heat dissipation surface, and should preferably have a coefficient of thermal expansion close to that of the semiconductor laser element, and also have a high thermal conductivity. The best material is one that is cost-effective and easy to use, and silicon satisfies all of these conditions. Of course, other materials can also be used in the die bonding method for semi-conductor laser devices of the present invention, but ideally it is best to use silicon.
また・用途によっては、高価ではあるがダイアモンドを
用いるのも有効であろう。Also, depending on the application, it may be effective to use diamond, although it is expensive.
以上が本発明の実施例である。The above are examples of the present invention.
本発明は、以上説明したように、マウントに凸部を形成
するという簡単なプロセスによす、半導体レーザ素子へ
のハンダの盛り上がりに起因する不良を防ぐことができ
る。As described above, the present invention can prevent defects caused by solder swelling on a semiconductor laser element by using a simple process of forming a convex portion on a mount.
また、半導体レーザ素子のグイボンディング時にハンダ
を十分に使うことができるため、半導体レーザ素子を確
実：てマウントと固定することができる。Furthermore, since sufficient solder can be used when bonding the semiconductor laser element, the semiconductor laser element can be securely fixed to the mount.
また、グイボンディング時のハンダの量が少々変化して
も、不良品になることがないため・グイボンディング装
置が簡略化できる〇
しかも、本発明のダイボンディング方法は・特別な装置
や器具を使用することなく、今まで用いているグイボン
ディング装置を一切調整もせずＫそのまま用いることが
できる＠そのため導入が容易で、新技術導入に伴いがち
なトラブルの心配がなく、今まで不良になったものが良
品になるため、確実な歩留まりの上昇が望める。In addition, even if the amount of solder during die bonding changes slightly, it will not result in a defective product. - The die bonding equipment can be simplified. Moreover, the die bonding method of the present invention - Uses special equipment and equipment. You can use the bonding equipment you have been using without making any adjustments at all. Therefore, it is easy to install, and there is no need to worry about the troubles that often occur when introducing new technology, and you can use it without making any adjustments. Since the product becomes a good product, a reliable increase in yield can be expected.
本発明には以上のような効果がある・The present invention has the above effects.
第１図は本発明の半導体レーザ素子ダイボンディング方
法を用いて実装した半導体レーザの断面図Ｏ
第２図は従来のグイざンディング方法を用いて実装した
半導体レーザの断面図。
１１．２１・・・・・・半導体レーザ素子１２．２２・
・・・・・活性層
１３．２５・・・・・・金−スズハンダ１４．２４・・
・・・・マウント
１５．２５・・・・・・放熱板
１６．２６・・・・・・金線
以 上FIG. 1 is a cross-sectional view of a semiconductor laser mounted using the semiconductor laser element die bonding method of the present invention; FIG. 2 is a cross-sectional view of a semiconductor laser mounted using the conventional guide bonding method. 11.21... Semiconductor laser element 12.22.
... Active layer 13.25 ... Gold-tin solder 14.24 ...
...Mount 15.25 ... Heat sink 16.26 ... Gold wire or more
Claims (1)
形成し、前記凸部に前記半導体レーザ素子をダイボンデ
ィングすることを特徴とする半導体レーザ素子ダイボン
ディング方法。A method for die bonding a semiconductor laser device, comprising: forming a convex portion smaller than the size of a semiconductor laser device on a mount, and die-bonding the semiconductor laser device to the convex portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61286480A JPS63138794A (en) | 1986-12-01 | 1986-12-01 | Die bonding for semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61286480A JPS63138794A (en) | 1986-12-01 | 1986-12-01 | Die bonding for semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63138794A true JPS63138794A (en) | 1988-06-10 |
Family
ID=17704938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61286480A Pending JPS63138794A (en) | 1986-12-01 | 1986-12-01 | Die bonding for semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63138794A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4035551A1 (en) * | 1989-11-09 | 1991-05-16 | Hosiden Corp | CONTROL PANEL HOLDING DEVICE |
| JPH0452769U (en) * | 1990-09-10 | 1992-05-06 | ||
| US6700911B2 (en) | 1999-12-01 | 2004-03-02 | Sharp Kabushiki Kaisha | Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device |
| JP2006332532A (en) * | 2005-05-30 | 2006-12-07 | Sharp Corp | Convergent solar cell module |
-
1986
- 1986-12-01 JP JP61286480A patent/JPS63138794A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4035551A1 (en) * | 1989-11-09 | 1991-05-16 | Hosiden Corp | CONTROL PANEL HOLDING DEVICE |
| JPH0452769U (en) * | 1990-09-10 | 1992-05-06 | ||
| US6700911B2 (en) | 1999-12-01 | 2004-03-02 | Sharp Kabushiki Kaisha | Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device |
| KR100446714B1 (en) * | 1999-12-01 | 2004-09-01 | 샤프 가부시키가이샤 | Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device |
| US6972205B2 (en) | 1999-12-01 | 2005-12-06 | Sharp Kabushiki Kaisha | Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device |
| JP2006332532A (en) * | 2005-05-30 | 2006-12-07 | Sharp Corp | Convergent solar cell module |
| JP4694892B2 (en) * | 2005-05-30 | 2011-06-08 | シャープ株式会社 | Concentrating solar cell module |
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