JPS63137168A - Microwave plasma treatment apparatus - Google Patents
Microwave plasma treatment apparatusInfo
- Publication number
- JPS63137168A JPS63137168A JP28306486A JP28306486A JPS63137168A JP S63137168 A JPS63137168 A JP S63137168A JP 28306486 A JP28306486 A JP 28306486A JP 28306486 A JP28306486 A JP 28306486A JP S63137168 A JPS63137168 A JP S63137168A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- processing apparatus
- material gas
- plasma
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009832 plasma treatment Methods 0.000 title 1
- 239000007769 metal material Substances 0.000 claims abstract description 20
- 238000005192 partition Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はマイクロ波プラズマ処理装置に係り、特に金属
材料ガスを用いて金ｉ膜を形成するのに好適なマイクロ
波プラズマ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave plasma processing apparatus, and particularly to a microwave plasma processing apparatus suitable for forming a gold i film using a metal material gas.
〔従来の技術〕。[Conventional technology].
マイクロ波発生器から導波管によって導かれてくるマイ
クロ波を真空仕切り窓を通してプラズマ生成室に導入し
て電子サイクロトロン共鳴法により低温プラズマを生成
し、材料ガスを注入した反応室に前記低温プラズマを拡
散して材料ガスを励起、電離し、反応室内の試料に膜を
形成するマイクロ波プラズマ処理装置が特開昭５６−１
５５５３５号公報に記載されている。Microwaves guided by a waveguide from a microwave generator are introduced into a plasma generation chamber through a vacuum partition window to generate low-temperature plasma by electron cyclotron resonance, and the low-temperature plasma is introduced into a reaction chamber into which material gas has been injected. A microwave plasma processing device that diffuses and excites and ionizes a material gas to form a film on a sample in a reaction chamber was developed in Japanese Patent Application Laid-Open No. 56-1.
It is described in Publication No. 55535.
ところがこのようなマイクロ波プラズマ処理装置は、金
属膜を形成しようとして金属材料ガスを反応室へ注入す
ると、反応室へ注入した金属材料ガスがプラズマ生成室
側に拡散してマイクロ波導入部の真空仕切り窓に付着し
、該金属材料ガスの付着量がマイクロ波の表皮効果以上
の厚みに達するとマイクロ波がプラズマ生成室に導入さ
れなくなってプラズマが生成されなくなる問題があった
。However, in such a microwave plasma processing apparatus, when metal material gas is injected into the reaction chamber in order to form a metal film, the metal material gas injected into the reaction chamber diffuses into the plasma generation chamber side, causing a vacuum in the microwave introduction section. When the metal material gas adheres to the partition window and the amount of the metal material gas adhered reaches a thickness that exceeds the skin effect of the microwave, there is a problem that the microwave is no longer introduced into the plasma generation chamber and no plasma is generated.
従って本発明の目的は、反応室に注入した金属材料ガス
が真空仕切り窓に付着するのを防止することにある。Therefore, an object of the present invention is to prevent the metal material gas injected into the reaction chamber from adhering to the vacuum partition window.
本発明はこの目的を達成するために、プラズマ生成室に
マイクロ波を導いて電子サイクロトロン間にマイクロ波
導入用の真空仕切り窓を設けたことを特徴とする。In order to achieve this object, the present invention is characterized in that a vacuum partition window for guiding microwaves into the plasma generation chamber and between the electron cyclotrons is provided for introducing the microwaves.
反応室に注入された金属材料ガスがプラズマ生成室に拡
散されても絞り板が障壁となってこの金属材料ガスが真
空仕切り窓まで侵入するのを妨げる。Even if the metal material gas injected into the reaction chamber is diffused into the plasma generation chamber, the aperture plate acts as a barrier and prevents this metal material gas from penetrating to the vacuum partition window.
以下、本発明の一実施例を図面を参照して説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
マグネトロン１の発振により発生されたマイクロ波２は
、反射波吸収用アイソレータ３、入反射波電力モニタ用
のパワーモニタ４、自動整合装置５を備えた整合器６を
介して出力される。負荷側インピーダンスの変化は反射
波電力の増加としてパワーモニタ４により検出され、増
幅器７を介して自動整合装置５に帰還されて整合器６に
よるインピーダンス整合が行われ、更に入射波電力と設
定値の差を増幅器７を介してマイクロ波発振用マグネト
ロン電源８の出力を波回路に帰還してマグネトロン１の
発振力を制御することにより常に一定のマイクロ波電力
がプラズマ生成室へ伝送されるようにする。The microwave 2 generated by the oscillation of the magnetron 1 is outputted via a matching device 6 including an isolator 3 for absorbing reflected waves, a power monitor 4 for monitoring the power of input reflected waves, and an automatic matching device 5. Changes in the load-side impedance are detected by the power monitor 4 as an increase in reflected wave power, which is fed back to the automatic matching device 5 via the amplifier 7, where impedance matching is performed by the matching device 6, and further between the incident wave power and the set value. The output of the magnetron power source 8 for microwave oscillation is fed back to the wave circuit via the amplifier 7 to control the oscillation power of the magnetron 1, so that a constant microwave power is always transmitted to the plasma generation chamber. .
以上のようにして出力されたマイクロ波２は真空仕切り
窓９を通して導波管１０ａ内に導入され、コーナ用金属
メツシュ１１での反射によって９０度方向転換されて導
波管１０ｂ、１０ｃ内を伝播してプラズマ生成室１２に
伝送される。導波管１０ａ〜ｌｏｃ内には石英やセラミ
ックス等の誘電体る。The microwave 2 output as described above is introduced into the waveguide 10a through the vacuum partition window 9, is reflected by the corner metal mesh 11, changes its direction by 90 degrees, and propagates inside the waveguides 10b and 10c. and transmitted to the plasma generation chamber 12. A dielectric material such as quartz or ceramics is inside the waveguides 10a to loc.
バルブ１４を介して供給されるプラズマ生成用ガスはス
パッタ防止用放電管を兼ねたガス注入筒１５からプラズ
マ生成室１２内に注入され、磁界発生用！赫イイルエ６
により発生した磁界とマイクロ波２によって電子サイク
ロトロン共鳴を起こして低温プラズマを生成する。この
低温プラズマは予め排気１７によって高真空にされた反
応室１８内に拡散され、パルプ１９を介して供給されガ
ス注入管２０によって該反応室１８内に注入された金属
材料ガスと衝突してこれを励起、電離し、該反応室１８
内の試料ホルダ２１に保持された試料２２の表面に金属
薄膜を生成する。The plasma generation gas supplied through the valve 14 is injected into the plasma generation chamber 12 from the gas injection tube 15 which also serves as a discharge tube for preventing spatter, and is used to generate a magnetic field! Hei Iile 6
Electron cyclotron resonance is caused by the magnetic field generated by the microwave 2 and the microwave 2, and low-temperature plasma is generated. This low-temperature plasma is diffused into the reaction chamber 18 which has been made into a high vacuum by the exhaust 17, and collides with the metal material gas supplied through the pulp 19 and injected into the reaction chamber 18 through the gas injection pipe 20. is excited and ionized, and the reaction chamber 18
A thin metal film is generated on the surface of the sample 22 held in the sample holder 21 inside.
補助排気ポンプ２３は導波管１０ａ （１０ｂ。The auxiliary exhaust pump 23 has a waveguide 10a (10b).
１０ｃ）内に拡散されたきた金属材料ガスを補助排気速
度調整パルプ２４を介して吸い込んでバルブ２５を介し
て排気する。パージ用ガス注入管２６はパルプ２７を介
して供給されたプラズマ生成用ガスを真空仕切り窓９の
内側へパージ用として注入する。10c) The metal material gas diffused inside is sucked in through the auxiliary exhaust speed adjusting pulp 24 and exhausted through the valve 25. The purge gas injection pipe 26 injects the plasma generation gas supplied through the pulp 27 into the vacuum partition window 9 for purging.
は拡散しにくく、拡散されても補助排気ポンプ２３真空
仕切り窓９の内側へはガス注入管２６によってプラズマ
生成用ガスがパージ用として注入されているので、核部
の圧力が高く、従って金属材料ガスが真空仕切り窓９に
達する機会は更に低減される。 ところで、コンダクタ
ンス絞り手反Ｌ ３ ａ〜１３ｃを金属で構成した場合
には、導波管１゜ａ〜ｌＯｃは負荷インピーダンス一定
の導波管として一定のマイクロ波電力をプラズマ生成室
１２へ伝送するが、誘電体で慣成した場合には金属材料
ガスが付着して負荷インピーダンスが変化する。is difficult to diffuse, and even if it is diffused, the plasma generation gas is injected into the inside of the vacuum partition window 9 of the auxiliary exhaust pump 23 for purging purposes by the gas injection pipe 26, so the pressure at the core is high, and therefore the metal material The chances of gas reaching the vacuum partition window 9 are further reduced. By the way, when the conductance apertures L3a to 13c are made of metal, the waveguides 1a to lOc transmit a constant microwave power to the plasma generation chamber 12 as waveguides with a constant load impedance. However, if it is made of a dielectric material, metal material gas will adhere and the load impedance will change.
しかしこの場合の負荷インピーダンスの変化は、その反
射波電力をパワーモニタ４で積出して整合器６によって
変化分を補償しマイクロ波伝送系の牟反１３ｃを、プラ
ズマによるスパウタ低減のために、石英やセラミック等
の誘電体とした場合には金属材料ガスが該コンダクタン
ス絞り板１３ｃに付着してインピーダンスが変化する。However, in this case, the reflected wave power is outputted by the power monitor 4 and the change in load impedance is compensated for by the matching box 6. When a dielectric material such as ceramic is used, metal material gas adheres to the conductance aperture plate 13c, changing the impedance.
しかしこのインピーダンスの変化は、前述のようにマイ
クロ波反射波電力の増加としてパワーモニタ４によって
検出され、整合器６によってインピーダンス整合される
ので一定のマイクロ波電力をプラズマ生成室１２へ伝送
することができる。However, as described above, this change in impedance is detected by the power monitor 4 as an increase in microwave reflected wave power, and the impedance is matched by the matching box 6, so that a constant microwave power can be transmitted to the plasma generation chamber 12. can.
以上のように本発明は、真空仕切り窓に向って拡散され
る金属材料ガスを絞り仮によって妨げるようにしたので
、マイクロ波を導入する真空仕切り窓に金属材料ガスが
付着するのを防止することができ、従って金属材料ガス
を用いたマイクロ波プラズマ処理装置においてプラズマ
を安定して生成することができる。As described above, the present invention prevents the metal material gas from being diffused toward the vacuum partition window by restricting it, thereby preventing the metal material gas from adhering to the vacuum partition window through which microwaves are introduced. Therefore, plasma can be stably generated in a microwave plasma processing apparatus using metal material gas.
図は本発明の一実施例を示すマイクロ波プラズマ処理装
置の縦断側面図である。The figure is a longitudinal sectional side view of a microwave plasma processing apparatus showing an embodiment of the present invention.
Claims (1)
介してプラズマ生成室に導いて電子サイクロトロン共鳴
法により低温プラズマを生成し、材料ガスを注入した反
応室に前記低温プラズマを拡散して該材料ガスを励起、
電離し、反応室内の試料に膜を形成するマイクロ波プラ
ズマ処理装置において、前記材料ガスに金属材料ガスを
用い、前記導波管に真空コンダクタンス調整用絞り板を
設け、この絞り板と前記マイクロ波発生器の間にマイク
ロ波導入用の真空仕切り窓を設けたことを特徴とするマ
イクロ波プラズマ処理装置。 ２、特許請求の範囲第１項において、前記絞り板はマイ
クロ波用インピーダンス窓を兼ねることを特徴とするマ
イクロ波プラズマ処理装置。 ３、特許請求の範囲第１項において、前記絞り板と真空
仕切り窓の間の導波管内を排気する補助排気装置を設け
たことを特徴とするマイクロ波プラズマ処理装置。 ４、特許請求の範囲第１項において、前記真空仕切り窓
の内側近傍にパージ用ガスを注入する手段を設けたこと
を特徴とするマイクロ波プラズマ処理装置。[Claims] 1. Microwaves generated by a microwave generator are guided to a plasma generation chamber through a waveguide to generate low-temperature plasma by electron cyclotron resonance, and the Diffusing low-temperature plasma to excite the material gas,
In a microwave plasma processing apparatus that ionizes and forms a film on a sample in a reaction chamber, a metal material gas is used as the material gas, a vacuum conductance adjustment aperture plate is provided in the waveguide, and the aperture plate and the microwave A microwave plasma processing apparatus characterized in that a vacuum partition window for introducing microwaves is provided between a generator. 2. The microwave plasma processing apparatus according to claim 1, wherein the aperture plate also serves as a microwave impedance window. 3. The microwave plasma processing apparatus according to claim 1, further comprising an auxiliary exhaust device for evacuating the inside of the waveguide between the aperture plate and the vacuum partition window. 4. The microwave plasma processing apparatus according to claim 1, further comprising means for injecting a purge gas near the inside of the vacuum partition window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28306486A JPS63137168A (en) | 1986-11-29 | 1986-11-29 | Microwave plasma treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28306486A JPS63137168A (en) | 1986-11-29 | 1986-11-29 | Microwave plasma treatment apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13394890A Division JPH0317273A (en) | 1990-05-25 | 1990-05-25 | Microwave plasma treating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137168A true JPS63137168A (en) | 1988-06-09 |
| JPH0521988B2 JPH0521988B2 (en) | 1993-03-26 |
Family
ID=17660735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28306486A Granted JPS63137168A (en) | 1986-11-29 | 1986-11-29 | Microwave plasma treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63137168A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290760A (en) * | 1988-05-19 | 1989-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Device for forming thin film |
| JPH0379421U (en) * | 1989-12-01 | 1991-08-13 |
-
1986
- 1986-11-29 JP JP28306486A patent/JPS63137168A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290760A (en) * | 1988-05-19 | 1989-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Device for forming thin film |
| JPH0379421U (en) * | 1989-12-01 | 1991-08-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0521988B2 (en) | 1993-03-26 |
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