JPS63134555U

JPS63134555U -

Info

Publication number: JPS63134555U
Application number: JP2593387U
Authority: JP
Priority date: 1987-02-24
Filing date: 1987-02-24
Publication date: 1988-09-02

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ａ，ｂはこの考案のヘテロ接合素子の伝
導帯バンド構造を示す図およびそのドーピング濃
度を示す図、第２図は従来のヘテロ接合ＦＥＴの
構造を示す断面図、第３図ａ，ｂは従来のヘテロ
接合ＦＥＴの伝導帯バンド構造を示す図およびそ
のドーピング濃度を示す図である。図において、１はシヨツトキゲート金属領域、
４ａ，４ｂはＡｌ_ｘＧａ_１―_ｘＡｓ領域、５はノ
ンドープＧａＡｓ領域、６は２次元電子領域であ
る。なお、各図中の同一符号は同一または相当部
分を示す。 Figures 1a and 1b are diagrams showing the conduction band structure and doping concentration of the heterojunction device of this invention, Figure 2 is a sectional view showing the structure of a conventional heterojunction FET, Figures 3a, b is a diagram showing the conduction band structure of a conventional heterojunction FET and its doping concentration. In the figure, 1 is a shot gate metal region;
4a and 4b are Al _x Ga ₁ - _x As regions, 5 is a non-doped GaAs region, and 6 is a two-dimensional electron region. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims

【実用新案登録請求の範囲】[Scope of utility model registration request]

ノンドープの半導体領域と、このノンドープの
半導体領域よりもバンドギヤツプが大きく、シヨ
ツトキゲート金属が形成されるとともに、不純物
がドーピングされた半導体領域とからなるヘテロ
接合を有し、このヘテロ接合界面に２次元電子領
域が形成されたヘテロ接合素子において、前記不
純物がドーピングされたバンドギヤツプの大きな
半導体領域を、前記２次元電子領域近傍の領域以
外でドーピング濃度を低く構成したことを特徴と
するヘテロ接合素子。 It has a heterojunction consisting of a non-doped semiconductor region and a semiconductor region with a larger bandgap than the non-doped semiconductor region, where a shot gate metal is formed and which is doped with impurities, and a two-dimensional electron region is formed at the interface of this heterojunction. A heterojunction element in which a semiconductor region doped with the impurity and having a large band gap is configured to have a low doping concentration in a region other than a region near the two-dimensional electron region.