JPS63126682A - Positioning pin for projection welding subjected to ceramic coating by chemical compaction method - Google Patents
Positioning pin for projection welding subjected to ceramic coating by chemical compaction methodInfo
- Publication number
- JPS63126682A JPS63126682A JP27089686A JP27089686A JPS63126682A JP S63126682 A JPS63126682 A JP S63126682A JP 27089686 A JP27089686 A JP 27089686A JP 27089686 A JP27089686 A JP 27089686A JP S63126682 A JPS63126682 A JP S63126682A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pin
- positioning pin
- coating
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003466 welding Methods 0.000 title claims description 19
- 239000000126 substance Substances 0.000 title abstract description 11
- 238000005056 compaction Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title description 10
- 238000005524 ceramic coating Methods 0.000 title description 7
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000010959 steel Substances 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 8
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims abstract description 5
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 17
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005238 degreasing Methods 0.000 abstract description 3
- 238000005422 blasting Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 102200082816 rs34868397 Human genes 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000000280 densification Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 238000007750 plasma spraying Methods 0.000 description 7
- 238000010292 electrical insulation Methods 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000004901 spalling Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Chemical Treatment Of Metals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、鋼板にナツト等を溶接するのに利用されるプ
ロジェクション溶接用の位置決めピンに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a projection welding positioning pin used for welding a nut or the like to a steel plate.
（従来の技術）
特開昭６１−２７１８５にプラズマ溶射層を被覆形成せ
しめたプロジェクション溶接用位置決めピンが開示され
ている。(Prior Art) Japanese Patent Laid-Open No. 61-27185 discloses a projection welding positioning pin coated with a plasma sprayed layer.
プロジェクション溶接用位置決めピンは、第２図および
第３図に示すように、例えば鋼板１にナツト２をプロジ
ェクション溶接する際、鋼板１と−ナツト２の位置決め
を行うために用いられる。第２図は、溶接前の状態を示
し、位置決めピン３は空気圧またはスプリングなどの附
勢手段によって上方に常に持ち上げられた状態になって
おり、ナツト２を鋼板１より離した状態で保持している
。As shown in FIGS. 2 and 3, the projection welding positioning pin is used, for example, to position the steel plate 1 and the nut 2 when projection welding the nut 2 to the steel plate 1. Figure 2 shows the state before welding, in which the positioning pin 3 is constantly lifted upward by biasing means such as air pressure or a spring, and the nut 2 is held away from the steel plate 1. There is.
第３図は溶接のために上部電極６が打ち降ろされた状態
を示し、ナツト２と位置決めピン３は上方へ附勢力に抗
して下方に押し下げられている。FIG. 3 shows the state in which the upper electrode 6 is lowered for welding, and the nut 2 and positioning pin 3 are pushed down against the upward force.
この位置決めピンの材質は、何回も下部電極７の内壁面
と摺接しながら上下動させるため耐摩耗性を必要とする
こと、電気的に絶縁性のものであることが必要である。The material of this positioning pin needs to be wear resistant and electrically insulating since it is moved up and down while slidingly contacting the inner wall surface of the lower electrode 7 many times.
従来の位置決めピンは、鋼材製のピンの基材をベークラ
イト等で覆って絶縁するとか、特殊な金属材料（Ｋ Ｃ
Ｆ材）よりなるピンの表面を酸化させて金属酸化物の皮
膜を形成するとか、前記特開昭６１−２７１８５に開示
されているプラズマ溶射法によるセラミック皮膜を形成
することによって、電機絶縁性と耐摩耗性の向上をはか
ってきた。Conventional positioning pins are made by covering the base material of the steel pin with Bakelite etc. to insulate it, or by using a special metal material (K.C.
By oxidizing the surface of the pin made of F material to form a metal oxide film, or by forming a ceramic film by the plasma spraying method disclosed in JP-A-61-27185, electrical insulation properties can be improved. Efforts have been made to improve wear resistance.
（発明が解決しようとする問題点）
上記の位置決めピンでは、耐摩耗性が不十分であったり
、微小電流の通過によりナンド溝が荒れるなどの問題が
あり、またプラズマ溶射法によるセラミック皮膜では、
気孔が不可避であり、密着力が不十分で繰返しかかる熱
衝撃により剥離するという問題点があった。そのため耐
摩耗性、絶縁性が十分で、熱衝撃による皮膜の剥離が生
じない、無気孔で密着力、耐摩耗性に優れ、十分に強度
があり、電機絶縁性の優れた位置決めピンが望まれてい
た。(Problems to be Solved by the Invention) The above-described positioning pins have problems such as insufficient wear resistance and the NAND grooves becoming rough due to the passage of minute currents.
There were problems in that pores were inevitable, adhesion was insufficient, and peeling occurred due to repeated thermal shocks. Therefore, a positioning pin that has sufficient wear resistance and insulation properties, does not cause peeling of the film due to thermal shock, is nonporous, has excellent adhesion, wear resistance, is sufficiently strong, and has excellent electrical insulation properties is desired. was.
（問題点を解決するための手段）
本発明は、従来技術の有する前記問題点を除去・改善す
ることのできる位置決めピンを提供することを目的とす
るものであり、特許請求の範囲記載の位置決めピンを提
供することによって、前記目的を達成することができる
。すなわち本発明は、鋼材よりなるピン表面に、５０％
クロム酸水溶液にそれと同重量でＳｉＯ□：５０〜９５
重量％、Ａβ２０３＝５〜５０重景％および不可避的不
純物よりなる粉末を混合してスラリーを調整し、塗布後
焼成し多孔質皮膜を形成させ、ＣｒＯ：＋水溶液を少な
くとも２回以上含浸焼成させることによりＣｒ２Ｏ３に
変換させ、化学的に緻密化された厚さ３０〜２００μｍ
のセラミックス層を被覆形成せしめたことを特徴とする
プロジェクション溶接用位置決めピンに関するものであ
る。(Means for Solving the Problems) An object of the present invention is to provide a positioning pin that can eliminate and improve the above-mentioned problems of the prior art. By providing a pin, this objective can be achieved. That is, in the present invention, 50% of the surface of the pin made of steel is
Add the same weight of SiO□ to chromic acid aqueous solution: 50 to 95
A slurry is prepared by mixing a powder consisting of weight%, Aβ203 = 5 to 50 weight% and inevitable impurities, and after coating, it is fired to form a porous film, and impregnated with a CrO:+ aqueous solution at least twice and fired. 30-200 μm thick chemically densified by converting to Cr2O3
The present invention relates to a positioning pin for projection welding, characterized in that it is coated with a ceramic layer.
本発明は、予め脱脂、脱錆、必要に応じてサンドブラス
ト処理等の前処理を施した鋼材よりなるピン基材の表面
に、５０％のクロム酸水溶液に、それと同重量でＳｉＯ
□：５０〜９５重景％、ＡＡ２０．：５〜５０重量％お
よび不可避的不純物よりなる粉末番混合してセラミック
スラリ−を調整し、浸漬法、あるいはスプレー法により
塗布し、乾燥後、４００〜６００℃で焼成し、多孔質皮
膜を形成させ、しかる後ＣｒＯ３水溶液を浸漬法あるい
は刷毛塗り等の方法により上記多孔質セラミック皮膜に
含浸し、乾燥後４００〜６００℃で焼成し、Ｃｒ ２０
ｘに変換させ、化学的に緻密化されたセラミックス層
を被覆形成させ、この化学緻密化法を少なくとも２回以
上繰返し施すことにより、３０〜２００μｍの緻密化し
、無気孔で密着力、耐摩耗性に優れ、十分に強度があり
、電機絶縁性の優れた位置決めピンを得る。In the present invention, SiO2 is added to a 50% aqueous solution of chromic acid on the surface of a pin base material made of a steel material that has been pretreated with degreasing, derusting, and sandblasting as necessary.
□: 50-95 heavy view%, AA20. : Prepare a ceramic slurry by mixing powders consisting of 5 to 50% by weight and unavoidable impurities, apply by dipping or spraying, and after drying, bake at 400 to 600°C to form a porous film. After that, the porous ceramic film is impregnated with a CrO3 aqueous solution by dipping or brush coating, dried and fired at 400 to 600°C to form a Cr20
By converting it into x and forming a chemically densified ceramic layer over it, and repeating this chemical densification method at least twice, it becomes densified to a thickness of 30 to 200 μm and has no pores, adhesion, and wear resistance. To obtain a positioning pin with excellent electrical insulation, sufficient strength, and excellent electrical insulation properties.
第１図は化学緻密化法によりセラミック被覆された皮膜
断面組織写真で、同図（ａ）はＳＥＭ２次電子像（Ｘ
６６０） 、同図（ｂ）は光学顕微鏡写真（Ｘ６６０）
である。第１図（ａ）、 （ｂ）に示されるセラミック
被覆とピン基材との境界に鉄、クロムを含む中間層が形
成され、この中間層により高密着力を生じ、セラミック
スラリ−コーティングによる硬質セラミック粒子と強固
に酸化物結合することにより、無気孔で高硬度のセラミ
ック皮膜を得る。Figure 1 is a photograph of the cross-sectional structure of a film coated with ceramic using the chemical densification method, and (a) is an SEM secondary electron image (X
660), the same figure (b) is an optical micrograph (X660)
It is. An intermediate layer containing iron and chromium is formed at the boundary between the ceramic coating and the pin base material shown in Figures 1 (a) and (b). By forming a strong oxide bond with the particles, a porosity-free and highly hard ceramic film can be obtained.
化学緻密化法によるコーティング皮膜はプラズマ溶射法
によるセラミックコーティングには見られない化学緻密
化が施されるため、不可避であった気孔をなくすことが
できる。このため微小電流の通過によるナツト溝の荒れ
、コーティング皮膜の欠損が発生しない。The chemical densification film produced by the chemical densification method is chemically densified, which is not seen in ceramic coatings produced by the plasma spraying method, so it is possible to eliminate the unavoidable pores. This prevents the nut groove from becoming rough and the coating film from becoming damaged due to the passage of minute currents.
本発明による皮膜の硬さは、Ｈｖ１２００〜１５００で
、プラズマ溶射法によるセラミック皮膜の硬さＨｖ７０
０〜１０００と比較し、高硬度であり、耐摩耗性に優れ
ている。また、化学緻密化法によるコーティング皮膜を
構成する粒子の寸法は、プラズマ溶射法によるセラミッ
ク皮膜は数１０μｍに対して、本発明による皮膜では１
μｍ以下と非常に小さい。The hardness of the coating according to the present invention is Hv1200-1500, and the hardness of the ceramic coating obtained by plasma spraying is Hv70.
Compared to 0 to 1000, it has high hardness and excellent wear resistance. In addition, the size of the particles constituting the coating film formed by the chemical densification method is several tens of μm for the ceramic film formed by the plasma spraying method, whereas the size of the particles constituting the coating film formed by the present invention is 1 μm.
Very small, less than μm.
このことは本発明によるコーティング皮膜の優れた耐摩
耗性に重要な役割を果たしている。粒子が非常に小さい
ため、コーティング皮膜表面から摩耗により若干の粒子
が脱落しても、それによって生ずる穴は無視し得るが、
プラズマ溶射法によるセラミック皮膜の場合には、粒子
寸法がはるかに大きいため、これが摩耗および摩擦抵抗
によって脱落した場合は穴の寸法は大きなものとなり、
皮膜のスポーリング、ビーリングあるいは剥離の原因と
なる。This plays an important role in the excellent wear resistance of the coating film according to the invention. Since the particles are very small, even if some particles fall off from the coating surface due to abrasion, the holes created by this can be ignored.
In the case of plasma-sprayed ceramic coatings, the particle size is much larger, so if they fall off due to abrasion and frictional resistance, the hole size will be larger;
May cause spalling, peeling or peeling of the film.
本発明による皮膜とピン基材との密着力は、直径４０龍
、長さ４０重曹の棒鋼２個の一方の断面に皮膜厚さ０．
５鶴の被覆処理を施し、他方の断面を溶融アルミナでプ
ラストして粗面とし、これらの被覆面とプラストした粗
面を接着剤で接合し引張試験を行う方法により、その値
は８００ ｋｇ／ｃｍ２以上あり、プラズマ溶射法によ
るセラミック皮膜とピン基材との密着力２５０〜３５０
ｋｇ／ａｍ”と比較して非常に密着力の優れた皮膜と
なっており、また耐熱衝撃性に優れている。６００℃か
ら水中投下する熱サイクルを繰り返し行ったところ、プ
ラズマ溶射法によるセラミック皮膜では２０〜３０回で
剥離したが、本発明による皮膜は１００回でも剥離しな
い。The adhesion between the coating according to the present invention and the pin base material is such that the coating thickness is 0.0 mm on one cross section of two steel bars with a diameter of 40 mm and a length of 40 mm.
The value was 800 kg / cm2 or more, and the adhesion between the ceramic coating and the pin base material by plasma spraying is 250 to 350.
The film has extremely good adhesion compared to "Kg/am", and also has excellent thermal shock resistance.After repeating the thermal cycle of dropping water from 600℃ into water, it was found that the ceramic film formed by plasma spraying was Although the film peeled off after 20 to 30 times, the film according to the present invention did not peel off even after 100 times.
また、本発明によるセラミック皮膜の電気伝導度は、１
０−６〜１０−７Ω−’ｃｍで位置決めピンとして十分
優れた絶縁性を有している。Further, the electrical conductivity of the ceramic film according to the present invention is 1
It has an insulation property of 0-6 to 10-7 Ω-'cm, which is excellent enough to be used as a positioning pin.
本発明において、ＳｉＯ，：５０〜９５重量％。In the present invention, SiO: 50 to 95% by weight.
ＡＩ！２０．＝５〜５０重量％とじたのは、ピン基材と
（！ ７ ミ７ ’）皮膜トノ膨張保ｖＪ、（５４５Ｃ
： １３．６Ｘ １０−６／”Ｃ，Ａ、Ｒ２Ｏ３：５．
４ Ｘｌ０−”／’Ｃ，ＣｒｚＯｚ：８．８Ｘ １０−
６／ ”Ｃ、Ｓ ｉｏ□ ： １０．３Ｘ １０−６／
”Ｃ）を考慮し、Ｓｉ０□５０重量％以下ではセラミッ
ク皮膜の膨張係数が小さくなり、繰返し加熱で剥離しや
すくなり、ＡｊｈＯｔ５重景％以下重量ピン基材に塗布
する際、被覆しに（いため５重量％を必要とする。従っ
て、ＳｉＯ□は５０〜９５重量％の範囲内にする必要が
ある。Ａ Ｉ！２０１は５０重量％以上になるとＡｊ２
２０ ：＋の膨張係数が小さいため、繰返し加熱で剥離
しやすくなるため、Ａ １２０ 、は５〜５０重世％の
範囲内にする必要がある。AI! 20. = 5 to 50% by weight is the pin base material and (! 7 Mi 7') film tonneau expansion retention VJ, (545C
: 13.6X 10-6/”C, A, R2O3:5.
4 Xl0-”/'C, CrzOz:8.8X 10-
6/”C, Sio□: 10.3X 10-6/
Considering "C), if Si0□50% by weight or less, the expansion coefficient of the ceramic film becomes small and it becomes easy to peel off by repeated heating. 5% by weight is required.Therefore, SiO□ must be in the range of 50 to 95% by weight.Aj2
Since the expansion coefficient of 20:+ is small, it is easy to peel off by repeated heating, so A120 needs to be within the range of 5 to 50%.
セラミック皮膜層の厚さを３０〜２００μｍとしたのは
、３０μｍ以下では電気絶縁性が低下し、まｆこ摩耗に
より寿命が短くなるためである。また２００μｍまでと
したのは、２００μｍ以上になると、化学緻密化処理に
おいて、ＣｒＯ３水溶液を含浸焼成させる際、拡散しに
くくなるためである。従って、セラミック皮膜厚さは３
０〜２００μｍの範囲内にする必要がある。The reason why the thickness of the ceramic film layer is set to 30 to 200 μm is that if the thickness is less than 30 μm, the electrical insulation property will be lowered and the life will be shortened due to machining wear. The reason why the thickness is set to 200 μm is that if the thickness exceeds 200 μm, it becomes difficult to diffuse when impregnating and firing a CrO3 aqueous solution in a chemical densification treatment. Therefore, the ceramic coating thickness is 3
It needs to be within the range of 0 to 200 μm.
次に本発明を実施例について説明する。Next, the present invention will be explained with reference to examples.
（実施例）
第２図および第３図は、鋼板１にナツト２をプロジェク
ション溶接する際の、位置決めピン３と上部電極６およ
び下部電極７との関係を示すプロジェクション溶接手段
の一部破断圧面図である。(Example) FIGS. 2 and 3 are partially broken pressure surface views of the projection welding means showing the relationship between the positioning pin 3, the upper electrode 6, and the lower electrode 7 when projection welding the nut 2 to the steel plate 1. It is.
第２図は、位置決めピン３にナツト２を装着した溶接前
の状態を示し、位置決めピン３は図示しない空気供給源
から空気供給口４を経て、キャンバ−５内へと導入され
た圧搾空気により常に上方へ押し上げられた状態となる
よう付勢され、ナツト２は鋼板工より離間した位置に保
持され、鋼板１と電気的に絶縁された状態を示す。FIG. 2 shows a state in which the nut 2 is attached to the positioning pin 3 before welding. The nut 2 is always urged upward, and the nut 2 is held at a position apart from the steel plate, and is electrically insulated from the steel plate 1.
第３図は、上部電極６の下降により、ナンド２および位
置決めピン３は、前述した上方への付勢に抗して下部電
極７の内壁面に摺接され下方へ押し下げられ、鋼板ｌペ
ナント２を圧接し溶接された状態を示す。FIG. 3 shows that when the upper electrode 6 is lowered, the NAND 2 and the positioning pin 3 slide against the inner wall surface of the lower electrode 7 against the above-mentioned upward bias and are pushed downward, and the steel plate l pennant 2 The state shown is that the parts are pressed together and welded.
このようなプロジェクション溶接手段において使用され
る位置決めピン３は、第４図に示すごとく、円柱状の一
端に鍔部１０を設け、他端を円錐部１１に形成した形状
とした３４５Ｃよりなる位置決めピン基材８を作り、そ
の基材８に前処理として脱脂、グリフドブラスト処理を
施し、次に５０％のクロム酸水溶液に、それと同重量で
重量比１：１のＳｉｏ２とＡ Ｉ！２０３の粉末を混合
し、磁性ボールミルを用いて１８時間混練し、スラリー
を調整し、コーティング工程として前記スラリー中に前
記前処理した位置決めピンを浸漬して３０〜ＢＯｐｍの
厚みで塗布し、乾燥させた後、電気炉を用いて６００℃
／時間で昇温し、５５０℃で１時間保持した後、１００
℃／時間で降温冷却して、気孔率１０〜２５％の多孔質
セラミック皮膜を形成させた。As shown in FIG. 4, the positioning pin 3 used in such a projection welding means is a positioning pin made of 345C having a cylindrical shape with a flange 10 at one end and a conical part 11 at the other end. A base material 8 is prepared, and the base material 8 is subjected to degreasing and glyphed blasting as pretreatment, and then mixed with Sio2 and AI! in a 50% chromic acid aqueous solution at a weight ratio of 1:1. No. 203 powder was mixed and kneaded for 18 hours using a magnetic ball mill to prepare a slurry, and as a coating step, the pretreated positioning pin was dipped into the slurry to a thickness of 30 to BOpm, and dried. After that, heat to 600℃ using an electric furnace.
/ hour, and after holding at 550℃ for 1 hour, 100℃
The temperature was lowered and cooled at a rate of .degree. C./hour to form a porous ceramic film having a porosity of 10 to 25%.
次に化学緻密処理として、前記多孔質セラミック皮膜を
形成させた位置決めピンを比重１．３０〜１．７０のＣ
ｒ０ｚ水溶液に含浸し、６００”Ｃ／時間で昇温させ５
５０℃で１時間保持した後、１００°Ｃ／時間で降温冷
却することにより、ＣｒＯ□をＣｒｚ○３に変換するこ
とにより、化学的に緻密化したセラミック皮膜層９を得
た。この化学緻密化処理を８〜１５回繰り返した後、表
面仕上げとしてナイロンバフにてコーティング表面を仕
上げ、目的とする位置決めピンを得た。Next, as a chemical densification treatment, the positioning pin on which the porous ceramic film was formed was
Impregnated in r0z aqueous solution and heated at 600"C/hour5
After holding at 50° C. for 1 hour, the temperature was lowered and cooled at 100° C./hour to convert CrO□ into Crz○3, thereby obtaining a chemically densified ceramic film layer 9. After repeating this chemical densification treatment 8 to 15 times, the coating surface was finished with a nylon buff to obtain the desired positioning pin.
従来のＫＣＦ材により皮膜を形成した位置決めピンを前
記のプロジェクション溶接に用いた結果、約４８ 、０
００回の仕様により表面にカジリが生じ交換しなければ
ならなかった。一方、本発明によりセラミック被覆され
た位置決めピンは約４００ 、０００回使用した状態で
、殆ど損傷がなく、約９倍以上の優れた耐摩耗性を有す
ることが確認された。また皮膜の表面が摩耗等により若
干の粒子脱落が発生したものであっても、その穴は殆ど
無視し得るほど微細なものであり、スポーリング、ピー
リングの原因となる程のものでなく、また皮膜の電気伝
４度は１０”ｈ〜１０−７Ω−’ｃｍであり、プロジェ
クション溶接の際の電気分流を充分に防ぎ、製品を損傷
することなく、位置決めピンの品質が長期間確保され、
耐久性に優れていることが確認された。As a result of using a positioning pin coated with a conventional KCF material for the above-mentioned projection welding, it was approximately 48.0
Due to the 00 specifications, the surface was scratched and had to be replaced. On the other hand, it was confirmed that the positioning pin coated with ceramic according to the present invention showed almost no damage even after being used about 400,000 times, and had an excellent wear resistance of about 9 times or more. Furthermore, even if some particles have fallen off the surface of the coating due to abrasion, etc., the holes are so minute that they can be ignored and are not large enough to cause spalling or peeling. The electrical conductivity of the film is 10"h~10-7Ω-'cm, which sufficiently prevents electrical shunt during projection welding, ensuring the quality of the positioning pin for a long time without damaging the product.
It was confirmed that it has excellent durability.
″ （発明の効果）
本発明による位置決めピンは、基材として５４５Ｃ等の
綱材を使用し、従来のプラズマ溶射法、ＫＣＦ材による
金属酸化物の皮膜を形成するものと異なり、耐摩耗性、
絶縁性が不十分であることに起因する損傷を防止するこ
とができ、従来の位置決めピンに比し優れた耐久性があ
ると共に、皮膜の電気伝導度は１０−”〜１０−’Ω−
’ｃｎ＋であり、プロジェクション溶接の際、電気分流
を十分に防ぎ、製品を撰偏することなく品質の安定した
溶接品を長期間供給し得るものであり、生産性の向上が
図られ、その効果は大きい。'' (Effects of the Invention) The positioning pin according to the present invention uses a wire material such as 545C as the base material, and unlike the conventional plasma spraying method or forming a metal oxide film using KCF material, the positioning pin has wear resistance,
It can prevent damage caused by insufficient insulation, has superior durability compared to conventional locating pins, and has an electrical conductivity of 10-'' to 10-'Ω-.
'cn+, which sufficiently prevents electrical shunt during projection welding and can supply welded products with stable quality for a long period of time without unbalanced product selection, improving productivity and its effects. is big.
なお、ナツトを鋼板にプロジェクション溶接する実施態
様について述べたが、他のプロジェクション溶接用位置
決めピンに通用することも可能である。Although an embodiment in which a nut is projection welded to a steel plate has been described, it is also possible to apply the present invention to other positioning pins for projection welding.
第１図は本発明による化学緻密化法によりセラミック被
覆された皮膜断面組織写真で（ａ）はＳＥＭ２次電子像
（Ｘ６６０）、 （ｂ）は光学顕微鏡写真（Ｘ６６０）
、第２図、第３図は鋼板にナンドをプロジェクション溶
接する際の、位置決めピンと電極との関係を示す一部破
断正面図、
第４図は位置決めピンの例を示す一部破断正面図を示す
。
１・・・鋼板、２・・・ナツト、３・・・位置決めピン
、４・・・空気供給口、５・・・キャンバ−１６・・・
上部電極、７・・・下部電極、８・・・ピン基材、９・
・・セラミック皮膜層、１０・・・鍔、１１・・・円錐
部。
特許出願人 富士重工業株式会社
同 トーカ口株式会社
代理人 弁理士 村 １）政 治
第１図
第２
第３図
第４図Figure 1 is a photograph of the cross-sectional structure of a film coated with ceramic by the chemical densification method according to the present invention, (a) is an SEM secondary electron image (X660), and (b) is an optical micrograph (X660).
, Figures 2 and 3 are partially cutaway front views showing the relationship between the positioning pin and electrode when projection welding NAND onto a steel plate, and Figure 4 is a partially cutaway front view showing an example of the positioning pin. . 1... Steel plate, 2... Nut, 3... Positioning pin, 4... Air supply port, 5... Camber 16...
Upper electrode, 7... Lower electrode, 8... Pin base material, 9.
...Ceramic film layer, 10...Brim, 11...Conical part. Patent applicant Fuji Heavy Industries Ltd. Tokaguchi Co., Ltd. Agent Patent attorney Mura 1) Politics Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
に、それと同重量でＳｉＯ＿２：５０〜９５重量％、Ａ
ｌ＿２Ｏ＿３：５〜５０重量％および不可避的不純物よ
りなる粉末を混合してスラリーを調整し、塗布後焼成し
多孔質皮膜を形成させ、ＣｒＯ＿３水溶液を少なくとも
２回以上含浸焼成することによりＣｒ＿２Ｏ＿３に変換
させ、化学的に緻密化された皮膜厚さ３０〜２００μｍ
を被覆形成せしめたことを特徴とするプロジェクション
溶接用位置決めピン。1. On the surface of a pin made of steel, add 50% chromic acid aqueous solution to the same weight as SiO_2: 50-95% by weight, A
l_2O_3: A slurry is prepared by mixing powder consisting of 5 to 50% by weight and unavoidable impurities, and after coating, it is fired to form a porous film, and it is converted to Cr_2O_3 by impregnating and firing at least two times with a CrO_3 aqueous solution. , chemically densified film thickness 30-200μm
A positioning pin for projection welding, characterized by having a coating formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27089686A JPS63126682A (en) | 1986-11-15 | 1986-11-15 | Positioning pin for projection welding subjected to ceramic coating by chemical compaction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27089686A JPS63126682A (en) | 1986-11-15 | 1986-11-15 | Positioning pin for projection welding subjected to ceramic coating by chemical compaction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63126682A true JPS63126682A (en) | 1988-05-30 |
| JPH0370595B2 JPH0370595B2 (en) | 1991-11-08 |
Family
ID=17492482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27089686A Granted JPS63126682A (en) | 1986-11-15 | 1986-11-15 | Positioning pin for projection welding subjected to ceramic coating by chemical compaction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63126682A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6642471B2 (en) * | 2000-02-06 | 2003-11-04 | Usui Kokusai Sangyo Kaisha Limited | Method for the projection welding of high-carbon steels and high-tension low-alloy steels |
| US6805968B2 (en) | 2001-04-26 | 2004-10-19 | Tocalo Co., Ltd. | Members for semiconductor manufacturing apparatus and method for producing the same |
| US7033156B2 (en) | 2002-04-11 | 2006-04-25 | Luka Gakovic | Ceramic center pin for compaction tooling and method for making same |
| US7214046B2 (en) | 2002-04-11 | 2007-05-08 | Luka Gakovic | Ceramic center pin for compaction tooling and method for making same |
| US8312612B2 (en) | 2002-04-11 | 2012-11-20 | Blue Sky Vision Partners, Llc | Refurbished punch tip and method for manufacture and refurbishing |
| US8569177B2 (en) | 2012-01-25 | 2013-10-29 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5614946U (en) * | 1979-07-11 | 1981-02-09 | ||
| JPS6068181A (en) * | 1983-09-26 | 1985-04-18 | Toshiba Corp | Jig for welding |
| JPS61182683U (en) * | 1985-04-30 | 1986-11-14 |
-
1986
- 1986-11-15 JP JP27089686A patent/JPS63126682A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5614946U (en) * | 1979-07-11 | 1981-02-09 | ||
| JPS6068181A (en) * | 1983-09-26 | 1985-04-18 | Toshiba Corp | Jig for welding |
| JPS61182683U (en) * | 1985-04-30 | 1986-11-14 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6642471B2 (en) * | 2000-02-06 | 2003-11-04 | Usui Kokusai Sangyo Kaisha Limited | Method for the projection welding of high-carbon steels and high-tension low-alloy steels |
| US6805968B2 (en) | 2001-04-26 | 2004-10-19 | Tocalo Co., Ltd. | Members for semiconductor manufacturing apparatus and method for producing the same |
| US7033156B2 (en) | 2002-04-11 | 2006-04-25 | Luka Gakovic | Ceramic center pin for compaction tooling and method for making same |
| US7214046B2 (en) | 2002-04-11 | 2007-05-08 | Luka Gakovic | Ceramic center pin for compaction tooling and method for making same |
| US7913369B2 (en) | 2002-04-11 | 2011-03-29 | Blue Sky Vision Partners, Llc | Ceramic center pin for compaction tooling and method for making same |
| US8312612B2 (en) | 2002-04-11 | 2012-11-20 | Blue Sky Vision Partners, Llc | Refurbished punch tip and method for manufacture and refurbishing |
| US8569177B2 (en) | 2012-01-25 | 2013-10-29 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0370595B2 (en) | 1991-11-08 |
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