JPS63124417A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS63124417A JPS63124417A JP26860786A JP26860786A JPS63124417A JP S63124417 A JPS63124417 A JP S63124417A JP 26860786 A JP26860786 A JP 26860786A JP 26860786 A JP26860786 A JP 26860786A JP S63124417 A JPS63124417 A JP S63124417A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- resist
- shape
- etched
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000001312 dry etching Methods 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 30
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 10
- 150000002500 ions Chemical class 0.000 abstract description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はドライエツチング方法、さらに詳しくはＣ１系
ガスを用いたｌのエツチング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry etching method, and more particularly to a method for etching l using a C1 gas.
従来、ドライエツチングにより 、ｌに順テーパーをつ
ける方法としては、等方的なエツチングを行なったり、
フォトレジストをエツチング中に横方向へ後退させなが
らテーパーをつける等の方法が行なわれてきた。この場
合エツチング後のパターンの寸法の再現性が悪く、微細
なパターンでは順テーパー形成は実用上不可能であった
。Conventionally, methods for applying a forward taper to l by dry etching include performing isotropic etching,
Methods such as tapering the photoresist while receding it laterally during etching have been used. In this case, the reproducibility of the pattern dimensions after etching was poor, and it was practically impossible to form a forward taper with a fine pattern.
本発明の目的は、従来の技術における欠点をとりのぞき
、寸法精度の高いテーパーエツチング形状の得られるＡ
ｎの順テーパー形状ドライエツチング方法を提供するこ
とである。The object of the present invention is to eliminate the drawbacks of the conventional techniques and to obtain a tapered etched shape with high dimensional accuracy.
An object of the present invention is to provide a method for dry etching a forward tapered shape of n.
本発明はＡｎのドライエツチングにおいて、送台系の形
状のレジストをエツチングマスクとし、ｌθ〜２０Ｐａ
の塩素系ガスを用いてエツチングすることを特徴とする
八ｆｌの順テーパー形状を形成する方法である。In the dry etching of An, the present invention uses a resist shaped like a carriage system as an etching mask, and uses lθ to 20Pa.
This is a method for forming a forward tapered shape of 8 fl, which is characterized by etching using a chlorine-based gas.
本発明を図面を用いて説明する。第１図は本発明のドラ
イエツチング方法に用いる陰極結合型（カソードカップ
ル）エツチングリアクター１の概念図を示す。反応室に
はエツチングガス導入口２、上部電極３．下部電極４．
真空排気口６が備えられ、電極間には高周波（１３，５
６ＭＨｚ）電源５より電圧が印加される。ウェハー（被
エツチング材料）を配置するウェハースチーシフは下部
電極（陰極）上に設けられる。The present invention will be explained using the drawings. FIG. 1 shows a conceptual diagram of a cathode-coupled etching reactor 1 used in the dry etching method of the present invention. The reaction chamber has an etching gas inlet 2, an upper electrode 3. Lower electrode 4.
A vacuum exhaust port 6 is provided, and a high frequency (13,5
6MHz) voltage is applied from the power supply 5. A wafer stack on which the wafer (material to be etched) is placed is provided on the lower electrode (cathode).
第２図は、本発明の詳細な説明するための図である。第
２図（ａ）は第１図のウェハースチーシフ上に置かれた
下地１０上の被エツチング材料９の上に、エツチングマ
スクである断面が逆台形のレジスト８がおかれている状
態を示している。本発明の被エツチング材料は、Ａ１で
あって単体＋ｌのばか例えばＡＩｌ、−Ｓｉ、Ａｌ１−
Ｓｉ −Ｇｕ、八１ｌ−５ｉ−Ｔｉ。FIG. 2 is a diagram for explaining the present invention in detail. FIG. 2(a) shows a state in which a resist 8, which is an etching mask and has an inverted trapezoidal cross section, is placed on the etched material 9 on the base 10 placed on the wafer stack of FIG. ing. The material to be etched according to the present invention is A1, which is a simple material of +l, for example, AIl, -Si, Al1-
Si-Gu, 81l-5i-Ti.
ＡｊＺ−Ｃｕなどの１合金を含むものである。ドライエ
ツチングは第１図のエツチングガス導入口２からガスを
導入し、高周波電源５により上部３、下部４の両電極間
でプラズマが発生し、イオンシース領域にラジカルやイ
オンが進入し加速されて陰極へ向う。その際下部電極４
の上のウェハーステージに設置されである被エツチング
材料に衝突して物理的にあるいは化学的にエツチングが
行なわれ、その生成物は排気口６より真空ポンプへ排気
される。被エツチング物は通常フォトレジスト等のマス
クを用いてエツチングする部分とされない部分とに分け
るのである。本発明においてはレジストを第２図の８の
ように逆台形のものとし、塩素系ガスを導入するのでプ
ラズマ中で加速されたイオンやラジカルがｉ表面に対し
て垂直に入射すると同時にレジスト下の逆台形により形
成されるシャドー空間１１にも入り込みシャドー内のＡ
１もエツチングが進行する。エツチング圧力がｌθ〜２
０ＰａではＣ２４等の加速されたイオンが八ｋを物理的
にエツチングすると同時にＣｋ′等の中性ラジカルによ
って化学的なエツチングも進行する。こうした活動性が
ｌと反応してＡｊＬ１４ｘを生成して排気される。第２
図（ａ） 、 （ｂ）の下向きの矢印はｃｆｔ’ 、ｃ
ｕ＋等の被エツチング材料への進行を示し、第２図（ｂ
）の上向きの矢印はエツチング成生物等の排気口への進
行を示す。1 alloy such as AjZ-Cu. In dry etching, gas is introduced from the etching gas inlet 2 shown in Figure 1, plasma is generated between the upper and lower electrodes 3 and 4 by the high frequency power source 5, and radicals and ions enter the ion sheath region and are accelerated. Head to the cathode. At that time, the lower electrode 4
The material to be etched is physically or chemically etched by colliding with the material to be etched, and the product is exhausted from the exhaust port 6 to the vacuum pump. The object to be etched is usually divided into parts to be etched and parts not to be etched using a mask such as photoresist. In the present invention, the resist is made into an inverted trapezoidal shape as shown at 8 in Fig. 2, and chlorine-based gas is introduced, so that ions and radicals accelerated in the plasma are incident perpendicularly to the i-surface, and at the same time, the resist under the resist is A in the shadow also enters the shadow space 11 formed by the inverted trapezoid.
1, etching progresses as well. Etching pressure is lθ~2
At 0 Pa, accelerated ions such as C24 physically etch 8k, and at the same time, chemical etching progresses due to neutral radicals such as Ck'. This activity reacts with l to produce AjL14x and is exhausted. Second
The downward arrows in figures (a) and (b) are cft', c
Figure 2 (b) shows the progress to the material to be etched such as u+.
) upward arrows indicate the progress of etching adults, etc. to the exhaust port.
レジスト下のシャドー内に入り込む加速寄れたイオンや
ラジカルは、垂直に進行するものより当然少ないのでエ
ツチングの進行にも差が生じて、第２図（ｂ）のごとく
順テーパー形状が形成される。なおレジストからの分解
生成物や、 ５ｉＣＪＺ ４等のデボ性のガスを用いた
ときのそれらが、側壁を保護して順テーパー生成に好ま
しい影響を与えることも考えられる。Since the accelerated ions and radicals that enter the shadow under the resist are naturally smaller than those that advance vertically, a difference occurs in the progress of etching, and a forward tapered shape is formed as shown in FIG. 2(b). It is also conceivable that decomposition products from the resist and decomposition gases such as 5iCJZ 4 are used to protect the sidewalls and have a favorable influence on forward taper formation.
本発明に用いるガスＩｎのエツチングに適する公知のＣ
Ｊ１２． ＣＣＲ，４，Ｂ（１４３、ＳｉＣ立。等およ
びこれらの混合物である。これらガスのエツチング実施
時の圧力は、１０〜２０Ｐａが好ましく、ｌ ＯＰａ未
満ではレジスト上部からほぼ垂直の形状となり、２０Ｐ
ａを超えると下に凸の弓形（等方的）形状となる。Known C suitable for etching gas In used in the present invention
J12. CCR, 4, B (143, SiC, etc.) and mixtures thereof. The pressure during etching with these gases is preferably 10 to 20 Pa; if it is less than 1 OPa, the shape is almost perpendicular to the top of the resist, and 20 P.
If it exceeds a, it becomes a downwardly convex arcuate (isotropic) shape.
第３図は、本発明の応用例を示す。レジストを第２図で
示したと同様の逆台形とし、前記本発明の方法でＡＩの
順テーパー形状を形成させ、ついでガス圧を数Ｐａまで
下げると異方性の強いエツチングが支配的になってほぼ
垂直のエツチングが可能となり、第３図のごときへ℃形
状を得ることができる。FIG. 3 shows an example of application of the present invention. The resist was made into an inverted trapezoid similar to that shown in FIG. 2, and a forward tapered shape of AI was formed by the method of the present invention, and then when the gas pressure was lowered to several Pa, highly anisotropic etching became dominant. It becomes possible to perform almost vertical etching, and it is possible to obtain a C shape as shown in FIG.
第４図は本発明のレジストの他の例を示す。前述の第２
図に示した形状のレジストを用いて正常のエツチングが
行なわれた場合は第４図（ａ）に示したＡｎ形状が得ら
れるが、さらに過剰のオーバーエツチングになるとレジ
ストそのものも多少エツチングされて元のパターン寸法
よりシフトし、したがって＋ｌのテーパー角は９０°に
近づき第４図（ｂ）に示した形状になる。このような場
合に、逆台形の上にその上表面を底面とした断面が方形
のレジストを重ね合せた第４図（Ｃ）に示した形状のレ
ジストを用いることによりオーバーエツチングにおいて
も所望のｌ形状を得ることができる。FIG. 4 shows another example of the resist of the present invention. The second mentioned above
If normal etching is performed using a resist with the shape shown in the figure, the An shape shown in FIG. Therefore, the taper angle of +l approaches 90°, resulting in the shape shown in FIG. 4(b). In such a case, by using a resist having the shape shown in FIG. 4(C), in which a resist having a rectangular cross section with its upper surface as the bottom is superimposed on an inverted trapezoid, the desired lance can be obtained even during overetching. shape can be obtained.
以上説明したように本発明の方法によりドライエツチン
グ時に用いるフォトレジストマスクの形状を逆台形にし
、１０〜２０Ｐａのガス圧力で塩素系ガスでＡｌをドラ
イエツチングすると寸法精度の高い順テーパーのエツチ
ング形状が得られ、レジスト除去後のＣＶＤやスパッタ
による成膜において良好なステップカバレッジを行なう
ことができる。As explained above, by changing the shape of the photoresist mask used during dry etching using the method of the present invention into an inverted trapezoid, and dry etching Al with chlorine gas at a gas pressure of 10 to 20 Pa, a forward tapered etched shape with high dimensional accuracy can be obtained. As a result, good step coverage can be achieved in film formation by CVD or sputtering after resist removal.
第１図は陰極結合型エツチングリアクターの概念図、第
２図は本発明の詳細な説明図で第２図（ａ）はエツチン
グ開始時、第２図（ｂ）はエツチング進行時の状態を示
す。第３図は本発明の応用例の模式図、第４図は本発明
のレジストの他の例を説明する図で、第４図（ａ）は好
ましいエツチングの例、第４図（ｂ）はオーバーエツチ
ングの例、第４図（Ｃ）はオーバーエツチングにも適合
するレジストの形状の例を示す。
１・・・・・・エツチングリアクター、２・・・・・・
エツチングガス導入口、３・・・・・・上部電極、
４・・・・・・下部電極、５・・・・・・高周波電
源、 ６・・・・・・真空排気口、７・・・・・
・ウェハーステージ、８・・・・・・レジスト、９・・
・・・・ｉ、 １０・・・・・・下地、１１
・・・・・・シャドー空間。Figure 1 is a conceptual diagram of a cathode-coupled etching reactor, and Figure 2 is a detailed explanatory diagram of the present invention. Figure 2 (a) shows the state at the start of etching, and Figure 2 (b) shows the state as etching progresses. . FIG. 3 is a schematic diagram of an applied example of the present invention, and FIG. 4 is a diagram explaining another example of the resist of the present invention. FIG. 4(a) is a preferred example of etching, and FIG. 4(b) Example of Overetching FIG. 4C shows an example of a resist shape that is also suitable for overetching. 1... Etching reactor, 2...
Etching gas inlet, 3... upper electrode,
4... Lower electrode, 5... High frequency power supply, 6... Vacuum exhaust port, 7...
・Wafer stage, 8...Resist, 9...
...i, 10...base, 11
...Shadow space.
Claims (1)
ジストをエッチングマスクとし、１０〜２０Ｐａの塩素
系ガスを用いてエッチングすることを特徴とするＡｌの
順テーパー形状を形成する方法。A method for forming a forward tapered shape of Al in dry etching of Al, which comprises using a resist having an inverted trapezoidal shape as an etching mask and performing etching using a chlorine-based gas of 10 to 20 Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26860786A JPS63124417A (en) | 1986-11-13 | 1986-11-13 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26860786A JPS63124417A (en) | 1986-11-13 | 1986-11-13 | Dry etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63124417A true JPS63124417A (en) | 1988-05-27 |
Family
ID=17460887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26860786A Pending JPS63124417A (en) | 1986-11-13 | 1986-11-13 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124417A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01300520A (en) * | 1988-05-30 | 1989-12-05 | Oki Electric Ind Co Ltd | Pattern formation |
| US5342481A (en) * | 1991-02-15 | 1994-08-30 | Sony Corporation | Dry etching method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159731A (en) * | 1985-01-08 | 1986-07-19 | Oki Electric Ind Co Ltd | Method of forming fine pattern |
-
1986
- 1986-11-13 JP JP26860786A patent/JPS63124417A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159731A (en) * | 1985-01-08 | 1986-07-19 | Oki Electric Ind Co Ltd | Method of forming fine pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01300520A (en) * | 1988-05-30 | 1989-12-05 | Oki Electric Ind Co Ltd | Pattern formation |
| US5342481A (en) * | 1991-02-15 | 1994-08-30 | Sony Corporation | Dry etching method |
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