JPS63120491A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS63120491A JPS63120491A JP26714186A JP26714186A JPS63120491A JP S63120491 A JPS63120491 A JP S63120491A JP 26714186 A JP26714186 A JP 26714186A JP 26714186 A JP26714186 A JP 26714186A JP S63120491 A JPS63120491 A JP S63120491A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- current barrier
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 238000005253 cladding Methods 0.000 claims description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 230000010355 oscillation Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は半導体レーザに関するものである。[Detailed description of the invention] (Industrial application field) This invention relates to a semiconductor laser.
(従来の技術) 従来開発きれた半導体レーザとして第2図に 。(Conventional technology) Figure 2 shows a conventionally developed semiconductor laser.
示すような埋込み型半導体レーザがある(アイ・トリプ
ル・イー ジャーナルオブカンタムエレクトロニクスz
(IEEE Journal of Quantum
Electronics 、 QE−16、205、1
980) )。活性層22が、活性層22よりも屈折率
の41許な半導体からなるn型クラッド層21.p型り
ラッド層23.n型半導体からなる埋込み層24によっ
てまわりを囲まれているから、光は活性層内に閉じ込め
られ、安定したレーザ発振状態を保つことができる。There is an embedded semiconductor laser as shown (I Triple E Journal of Quantum Electronics z
(IEEE Journal of Quantum
Electronics, QE-16, 205, 1
980) ). The active layer 22 is an n-type cladding layer 21 .made of a semiconductor whose refractive index is 41% higher than that of the active layer 22 . P-type rad layer 23. Since it is surrounded by the buried layer 24 made of an n-type semiconductor, light is confined within the active layer and a stable laser oscillation state can be maintained.
(発明が解決しようとする問題点)
しかしながら、第2図の構造の半導体レーザは、高いメ
サ状にエツチングして形成する必要があり、再成長によ
る埋込み層24の形成がむずかしい点や、埋込み層24
と活性層22の境界面の結晶性が悪く、特性の再現性や
高い信頼性が得られないという欠点を有していた。また
この半導体レーザは、p型りラッド層23から埋込み層
24へ電流が流れ、発振閾値電流が増加するという欠点
を有していた。(Problems to be Solved by the Invention) However, the semiconductor laser having the structure shown in FIG. 24
The crystallinity of the interface between the active layer 22 and the active layer 22 is poor, and the reproducibility of characteristics and high reliability cannot be obtained. Furthermore, this semiconductor laser had the disadvantage that current flows from the p-type rad layer 23 to the buried layer 24, increasing the oscillation threshold current.
本発明の目的は、この問題点を解決し、発振閾値電流が
小さく、特性の再現性に優れた半導体レーザを提供する
ことにある。An object of the present invention is to solve this problem and provide a semiconductor laser with a small oscillation threshold current and excellent reproducibility of characteristics.
(問題点を解決するための手段)
前述の問題点を解決するために本発明が提供する半導体
レーザは、平板状の第1クラ・yド層と、この第1クラ
ッド層上に形成されたス)・ライブ状の活性層と、前記
第1クラッド層上の前記活性層に隣接する領域に半導体
酸化膜で形成された電流障壁層と、前記活性層の側部及
び上部に隣接して形成された第2クラッド層とを有し、
前記活性層の側部は前記第1クラッド層に近い側におい
て前記電流障壁層に接し前記第1クラ・ンド層より遠い
側において前記第2クラッド層に接17ていることを特
徴とする。(Means for Solving the Problems) In order to solve the above-mentioned problems, the semiconductor laser provided by the present invention includes a flat first cladding layer and a first cladding layer formed on the first cladding layer. a) a live active layer, a current barrier layer formed of a semiconductor oxide film in a region adjacent to the active layer on the first cladding layer, and a current barrier layer formed adjacent to the sides and top of the active layer; a second cladding layer,
The side portions of the active layer are in contact with the current barrier layer on the side closer to the first cladding layer and in contact with the second cladding layer on the side farther from the first cladding layer.
(作用)
上述の構造の半導体レーザでは、活性層に隣接して半導
体酸化膜が形成されているから、漏れ電流を非常に小さ
くすることができる。また、活性層ストライプの高さは
0.17J171程度と、非常に低く、第2クラッド層
の結晶成長を再現性良く行なうことができる。(Function) In the semiconductor laser having the above structure, since the semiconductor oxide film is formed adjacent to the active layer, leakage current can be made very small. Further, the height of the active layer stripe is very low, about 0.17J171, and the crystal growth of the second cladding layer can be performed with good reproducibility.
(実施例) 次に図面を参照して本発明の実施例について説明する。(Example) Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示す断面図である。本実施
例は、n形GaAsからなる半導体基板10上に、n形
GaAsからなるバラプアー層(厚さ0.2pPn)1
1.n形An o 、 、Ga、 、 sAsからなる
第1クラッド層(厚さI Fin ) 12 、 An
GaAs酸化膜からなる電流障壁M(幅20泗、厚さ0
゜02訓) 13 、 GaAsからなるストライプ状
の活性層(幅4諷、厚さ0. ban ) 14 。FIG. 1 is a sectional view showing one embodiment of the present invention. In this example, a barrier layer (thickness 0.2 pPn) 1 made of n-type GaAs is placed on a semiconductor substrate 10 made of n-type GaAs.
1. A first cladding layer (thickness I Fin ) made of n-type An o , Ga, sAs (thickness I Fin ) 12 , An
Current barrier M made of GaAs oxide film (width 20 mm, thickness 0
13. Striped active layer made of GaAs (width 4 mm, thickness 0.0 mm) 14.
p形An o 、 4Ga6 、 、Asからなる第2
クラッド層(厚さ1胛)15.p形GaAqからなるキ
ャップ層16.及び5i0*膜17.p電極】8.n電
極19を形成した構造となっている。A second layer consisting of p-type An o , 4Ga6 , , As
Cladding layer (1 layer thick)15. Cap layer 16 made of p-type GaAq. and 5i0* membrane 17. p-electrode】8. It has a structure in which an n-electrode 19 is formed.
半導体結晶成長は、分子線結晶成長法により行なった。Semiconductor crystal growth was performed by molecular beam crystal growth.
まず、半導体基板】O上に、バッファー層11、第1ク
ラツド層12.活性層13を結晶成長し、次に結晶成長
した活性層13をス)・ライブ状に、第1クラッド層1
2が現れるまでエツチングし、これを酸素雰囲気中に保
持し、半導体酸化膜13を形成した。続いて再び分子線
結晶成長法により、第2クラツドM15.キャップ層1
6を結晶成長し、最後に5ift膜】7.p電wA18
r n電極19を形成した。First, a buffer layer 11, a first cladding layer 12. The active layer 13 is crystal-grown, and then the crystal-grown active layer 13 is formed into a strip-like shape with the first cladding layer 1.
Etching was performed until 2 appeared, and this was kept in an oxygen atmosphere to form a semiconductor oxide film 13. Subsequently, a second cladding M15. cap layer 1
6, and finally a 5ift film]7. p electric wA18
An r n electrode 19 was formed.
p電極18.及びn電極19から注入された正孔及び電
子は、電流障壁yf!f13により流れを妨げられ、全
て活性層14に流れ込む。このため、漏れ電流は非常に
少なくすることができた。また活性層14の厚さは0.
1ρであり、エツチングの深さも0.1ρ程度で済み、
電流障壁層13も0702諷と薄いので、はぼ平らな表
面に第2クラッド層15の結晶成長を行なうことができ
、ニーのため、再現性良く、結晶成長を行なうことがで
きた。成長条件により、電流障壁層13上の結晶が多結
晶となる場合もあるが、この場合も同様の効果が得られ
る。p-electrode 18. And the holes and electrons injected from the n-electrode 19 have a current barrier yf! The flow is obstructed by f13 and all of it flows into the active layer 14. Therefore, leakage current could be extremely reduced. Moreover, the thickness of the active layer 14 is 0.
1ρ, and the etching depth is only about 0.1ρ.
Since the current barrier layer 13 is also as thin as 0702, the crystal growth of the second cladding layer 15 can be performed on a substantially flat surface, and because of the knee, the crystal growth can be performed with good reproducibility. Depending on the growth conditions, the crystals on the current barrier layer 13 may become polycrystalline, but the same effect can be obtained in this case as well.
なお、本実施例では、AflGaAs系混晶を用いたが
これに限らずInAflGaAs系等他の半導体混晶を
用いても本発明は実現できる。In this embodiment, an AflGaAs-based mixed crystal is used, but the present invention is not limited to this, and the present invention can be realized using other semiconductor mixed crystals such as an InAflGaAs-based mixed crystal.
(発明の効果)
本発明によれば、薄い半導体酸化膜からなる電流障壁層
を活性層に隣接しで形成することにより、発振閾値電流
が小さく、特性の再現性に優れた半導体レーザを得るこ
とができる。(Effects of the Invention) According to the present invention, by forming a current barrier layer made of a thin semiconductor oxide film adjacent to the active layer, a semiconductor laser with a small oscillation threshold current and excellent reproducibility of characteristics can be obtained. Can be done.
第1図は本発明の一実施例を示す断面図、第2図は従来
の埋込み形半導体レーザを示す断面図である。
10・・・半導体基板、11・・・バッファー層、12
・・・第1クラッド層、13・・・電流障壁層、14・
・・活性層、15・・・第2クラッド層、16・・・キ
ャップ層、17・・・Sin、膜、18・・・p電極、
19・・・n電極、21・・・n形りラッド層、22・
・・活性層、23・・・p形りラッド層、24・・・埋
込み層。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional buried semiconductor laser. 10... Semiconductor substrate, 11... Buffer layer, 12
... first cladding layer, 13 ... current barrier layer, 14.
... Active layer, 15... Second cladding layer, 16... Cap layer, 17... Sin, film, 18... P electrode,
19...n electrode, 21...n-shaped rad layer, 22...
. . . active layer, 23 . . . p-type rad layer, 24 . . . buried layer.
Claims (1)
成されたストライプ状の活性層と、前記第1クラッド層
上の前記活性層に隣接する領域に半導体酸化膜で形成さ
れた電流障壁層と、前記活性層の側部及び上部に隣接し
て形成された第2クラッド層とを有し、前記活性層の側
部は前記第1クラッド層に近い側において前記電流障壁
層に接し前記第1クラッド層より遠い側において前記第
2クラッド層に接することを特徴とする半導体レーザ。a flat first cladding layer, a striped active layer formed on the first cladding layer, and a current barrier formed of a semiconductor oxide film in a region adjacent to the active layer on the first cladding layer. a second cladding layer formed adjacent to the sides and top of the active layer, the side of the active layer being in contact with the current barrier layer on the side closer to the first cladding layer, A semiconductor laser, wherein the semiconductor laser is in contact with the second cladding layer on a side farther from the first cladding layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26714186A JPS63120491A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26714186A JPS63120491A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63120491A true JPS63120491A (en) | 1988-05-24 |
Family
ID=17440649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26714186A Pending JPS63120491A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63120491A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0423772A2 (en) * | 1989-10-17 | 1991-04-24 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element |
JPH1154831A (en) * | 1997-08-05 | 1999-02-26 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
JPH11317563A (en) * | 1998-05-06 | 1999-11-16 | Nec Corp | Semiconductor laser and manufacture thereof |
-
1986
- 1986-11-10 JP JP26714186A patent/JPS63120491A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0423772A2 (en) * | 1989-10-17 | 1991-04-24 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element |
US5073806A (en) * | 1989-10-17 | 1991-12-17 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element with grooves |
JPH1154831A (en) * | 1997-08-05 | 1999-02-26 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
JPH11317563A (en) * | 1998-05-06 | 1999-11-16 | Nec Corp | Semiconductor laser and manufacture thereof |
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