JPS6311661A - Production of molybdenum nitride - Google Patents
Production of molybdenum nitrideInfo
- Publication number
- JPS6311661A JPS6311661A JP15450786A JP15450786A JPS6311661A JP S6311661 A JPS6311661 A JP S6311661A JP 15450786 A JP15450786 A JP 15450786A JP 15450786 A JP15450786 A JP 15450786A JP S6311661 A JPS6311661 A JP S6311661A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum nitride
- ion beam
- substrate
- ion beams
- high critical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 14
- 239000011780 sodium chloride Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 3
- 230000035939 shock Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 108091006629 SLC13A2 Proteins 0.000 description 1
- 241001481798 Stochomys longicaudatus Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明はジョセフノン素子、超伝導マグネ、ント。[Detailed description of the invention] Industrial applications The present invention is a Josephnon element, a superconducting magnet, and a superconducting magnet.
超伝導線材等に有効な高臨界温度超伝導材料の窒化モリ
ブデンの製造方法に関する。This invention relates to a method for producing molybdenum nitride, a high critical temperature superconducting material useful for superconducting wires, etc.
従来の技術 窒化モリブデンは本来六方晶構造を有する材料である。Conventional technology Molybdenum nitride is a material that originally has a hexagonal crystal structure.
しかし、最近、窒化モリブデンの相図上では存在しない
がＮａＣ１型の窒化モリブデンを合成することができれ
ば２５〜２９にの高臨界温度を示す可能性があることが
理論的に示された。このＮ ａＣ１型の窒化モリブデン
の合成へ向けて各所で研究が進められている。However, recently, it has been theoretically shown that if NaCl type molybdenum nitride, which does not exist in the phase diagram of molybdenum nitride, can be synthesized, it may exhibit a high critical temperature of 25 to 29. Research is progressing in various places toward the synthesis of this NaC1 type molybdenum nitride.
発明が解決しようとする問題点
ＮａＣ１型の窒化モリブデンは相図上存在しない物質で
あるため、特殊な方法を用いないと形成することができ
ない。最近スノ（ツタ法等で形成されつつあるが、まだ
十分な高臨界温度を示すものは形成されていない。Problems to be Solved by the Invention Since NaCl type molybdenum nitride is a substance that does not exist in the phase diagram, it cannot be formed without using a special method. Recently, they are being formed using the Suno (vine) method, but no one with a sufficiently high critical temperature has yet been formed.
問題点を解決するための手段
本発明者等は、イ・オ／を照射しつつ基板表面にモリブ
デンを供給して薄膜を形成すると、ＮａＣβ型の窒化モ
リブデンが形成できることを発明し、高臨界温度を有す
る窒化モリブデンの製造方法を発明した。Means for Solving the Problems The present inventors have invented that NaCβ type molybdenum nitride can be formed by supplying molybdenum to the substrate surface while irradiating I/O/ to form a thin film. We have invented a method for producing molybdenum nitride having the following properties.
作 用
この方法により、高臨界温度を有する窒化モリブデンを
製造することが可能となり、高性能超伝導体を得ること
ができることとなる。Function: This method makes it possible to produce molybdenum nitride having a high critical temperature, making it possible to obtain a high-performance superconductor.
実施例
第１図において、基板１ｏの表面１にモリブデン２を供
給し窒素を含むイオンビーム３を照射しつつ膜形成をす
ると、膜形成中にイオンビームとして活性化された窒素
が供給されることとなり、ＮａＣ１型の窒化モリブデン
が形成される。また、イオンビームは運動量を持って基
板表面に衝突するため、この衝突の衝撃により、非平衡
な０ａＣ１型の窒化モリブデンがさらに形成されやすい
と考えられる。イオンビーム中に不活性ガスのイオンが
含まれていると、不活性ガスは化学的に安定であるため
この衝撃をさらに効果的にすることのみに作用し、プロ
セスの活性化に有効である。またイオンビーム３を基板
表面とほぼ平行に照射することにより、イオンビームが
膜中に打ちこまれることにより、形成されていたＮａＣ
１型の窒化モリブデンの構造をこわしてしまうこと、基
板表面をあらすことをかさえることができる。基板表面
と平行に照射することにより、化学的な窒素の活性化が
抑制されることはなく、イオンの衝撃も、ＮａＣ１型の
構造を形成する方向にのみはたらくように制御すること
ができる。モリブデンはスパッタ、熱蒸発、エレクトロ
ンビーム蒸発、ＣＶＤ。Embodiment In FIG. 1, when molybdenum 2 is supplied to the surface 1 of the substrate 1o and a film is formed while being irradiated with an ion beam 3 containing nitrogen, nitrogen activated as an ion beam is supplied during film formation. Thus, NaCl type molybdenum nitride is formed. Further, since the ion beam collides with the substrate surface with momentum, it is considered that non-equilibrium 0aC1 type molybdenum nitride is more likely to be formed due to the impact of this collision. If inert gas ions are included in the ion beam, the inert gas is chemically stable, so it only serves to make this impact more effective, and is effective in activating the process. In addition, by irradiating the ion beam 3 almost parallel to the substrate surface, the ion beam is driven into the film, resulting in the formation of NaC.
This can prevent the structure of type 1 molybdenum nitride from being destroyed and the surface of the substrate from becoming rough. By irradiating parallel to the substrate surface, chemical activation of nitrogen is not suppressed, and ion bombardment can be controlled so that it acts only in the direction of forming the NaCl type structure. Molybdenum can be produced by sputtering, thermal evaporation, electron beam evaporation, or CVD.
などどの方法で供給されても有効である。また、この製
造方法は、基板上のみでなく、線材等の表面にも形成で
き、超伝導線材として非常に有効である。It is effective no matter how it is supplied. Moreover, this manufacturing method can be formed not only on a substrate but also on the surface of a wire, etc., and is very effective as a superconducting wire.
第２図に示すごとく、イオンビームスパッタ装置を用い
て、イオンンース４からアルゴント窒素の混合イオンビ
ーム３が照射され、このビーム３はターゲラトラスパッ
タするイオンビームを兼ねている。ターゲット５はモリ
ブデンの板を使用し、基板１０はＳｉを用いた。ターゲ
ット５は上記イオンビーム３によりスパッタされモリブ
デン粒子が真空中に飛び出す。基板１ｏｒＩ′ｉその表
面１が上記イオンビーム３とほぼ平行となるようにセッ
トされており、この基板１ｏ上に窒化モリブデンが形成
される。イオンビームのエネルキーｉｊ：１２００ｅＶ
、アルゴンと窒素は１：４の割合で混合してイオンンー
ス４に導入した。真空度は２ Ｘ Ｉ Ｑ−’ Ｔｏｒ
ｒ穆度とした。このようにして形成した窒化モリブデン
はＮａＣ１型の構造を示し、１０に以上の高臨界温度を
示した。As shown in FIG. 2, an ion beam sputtering device is used to irradiate a mixed ion beam 3 of argon and nitrogen from an ion source 4, and this beam 3 also serves as an ion beam for target rat sputtering. A molybdenum plate was used as the target 5, and Si was used as the substrate 10. The target 5 is sputtered by the ion beam 3, and molybdenum particles are ejected into the vacuum. A substrate 1 or I'i is set so that its surface 1 is substantially parallel to the ion beam 3, and molybdenum nitride is formed on this substrate 1o. Ion beam energy key ij: 1200eV
, Argon and nitrogen were mixed at a ratio of 1:4 and introduced into ion source 4. The degree of vacuum is 2 X I Q-' Tor
It was defined as r. The molybdenum nitride thus formed showed a NaCl type structure and a high critical temperature of 10°C or higher.
発明の効果
本発明は高臨界温度を有する窒化モリブデンの簡便な製
造方法を提供するものであり、高性能超伝導体を供給す
るものとしてその工業的価値は高い。Effects of the Invention The present invention provides a simple method for producing molybdenum nitride having a high critical temperature, and has high industrial value as a means of supplying high-performance superconductors.
第１図は本発明の窒化モリブデンの製造方法の原理図、
第２図は本発明の一実施例のイオンビームスパッタ装置
の概略図である。
・１・・・・・・基板表面、２・・・・・・モリブデン
粒子、３・・・・・・イオンビーム、４・・・・・・イ
オンンース、５・・・・・・ターゲット、１ｏ・旧・・
基板・FIG. 1 is a principle diagram of the method for producing molybdenum nitride of the present invention,
FIG. 2 is a schematic diagram of an ion beam sputtering apparatus according to an embodiment of the present invention.・1...Substrate surface, 2...Molybdenum particles, 3...Ion beam, 4...Ion dose, 5...Target, 1o・Old...
substrate·
Claims (4)
照射しつつモリブデンを供給して薄膜を形成することを
特徴とする窒化モリブデンの製造方法。(1) A method for producing molybdenum nitride, which comprises supplying molybdenum while irradiating the surface of a substrate with an ion beam containing at least nitrogen to form a thin film.
板表面とほぼ平行の方向にしたことを特徴とする特許請
求の範囲第１項記載の窒化モリブデンの製造方法。(2) The method for producing molybdenum nitride according to claim 1, wherein the ion beam containing nitrogen is irradiated onto the substrate surface in a direction substantially parallel to the substrate surface.
含むことを特徴とする特許請求の範囲第１項記載の窒化
モリブデンの製造方法。(3) The method for producing molybdenum nitride according to claim 1, wherein the ion beam irradiated onto the substrate surface also contains an inert gas.
をスパッタするイオンビームを兼ねることを特徴とする
特許請求の範囲第１項記載の窒化モリブデンの製造方法
。(4) The method for producing molybdenum nitride according to claim 1, wherein the ion beam irradiated onto the substrate surface also serves as an ion beam for sputtering a target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450786A JPS6311661A (en) | 1986-07-01 | 1986-07-01 | Production of molybdenum nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450786A JPS6311661A (en) | 1986-07-01 | 1986-07-01 | Production of molybdenum nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6311661A true JPS6311661A (en) | 1988-01-19 |
Family
ID=15585757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15450786A Pending JPS6311661A (en) | 1986-07-01 | 1986-07-01 | Production of molybdenum nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6311661A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100391606C (en) * | 2005-06-29 | 2008-06-04 | 中国科学院金属研究所 | Process and apparatus for preparing metal nitride catalyst material |
| CN100457270C (en) * | 2005-11-14 | 2009-02-04 | 中国科学院金属研究所 | Apparatus and method for preparing metal nitride catalytic material |
-
1986
- 1986-07-01 JP JP15450786A patent/JPS6311661A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100391606C (en) * | 2005-06-29 | 2008-06-04 | 中国科学院金属研究所 | Process and apparatus for preparing metal nitride catalyst material |
| CN100457270C (en) * | 2005-11-14 | 2009-02-04 | 中国科学院金属研究所 | Apparatus and method for preparing metal nitride catalytic material |
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