JPS63110784A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS63110784A JPS63110784A JP25753886A JP25753886A JPS63110784A JP S63110784 A JPS63110784 A JP S63110784A JP 25753886 A JP25753886 A JP 25753886A JP 25753886 A JP25753886 A JP 25753886A JP S63110784 A JPS63110784 A JP S63110784A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric film
- light
- rib
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 22
- 230000010355 oscillation Effects 0.000 abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 201000009310 astigmatism Diseases 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 244000175448 Citrus madurensis Species 0.000 description 1
- 102100021430 Cyclic pyranopterin monophosphate synthase Human genes 0.000 description 1
- 235000017317 Fortunella Nutrition 0.000 description 1
- 101000969676 Homo sapiens Cyclic pyranopterin monophosphate synthase Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 208000001488 molybdenum cofactor deficiency Diseases 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 208000016095 sulfite oxidase deficiency due to molybdenum cofactor deficiency Diseases 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体レーザの構造に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of a semiconductor laser.
半導体レーザ（以下ＬＤと記す。つと、元ディスクに情
報と書き込んだり、あるいは記録さｎている情報を読み
出したりするいわゆる元情報処理用光源として使用する
際、ＬＤより出射され九九が元ディスク面あるいは外部
に設けら九た光学系により反射さ几、その光が再びＩ、
Ｄの共振器に戻ることにより生ずる雑音（以下戻９′ｙ
ｔ、雑廿と記す。］が大きな問題となる。この戻り光雑
音と低減させる手段としては、ＬＤの共振器端面に屈折
率の異なる誘電体を多層にコーティングしてＴ、Ｄ共振
器端面の反射率を上げる方法、あるいは、一般に利得４
彼型ＬＤの特徴である侠モードの多軸発振を行なわせる
方法があった。When a semiconductor laser (hereinafter referred to as LD) is used as a light source for so-called original information processing to write information to the original disk or read recorded information, the multiplication table emitted from the LD is Alternatively, the light may be reflected by an external optical system, and the light may be reflected by an external optical system.
Noise generated by returning to the resonator of D (hereinafter referred to as return 9'y
t, written as zaso. ] becomes a big problem. As a means to reduce this return light noise, there is a method of increasing the reflectance of the T and D resonator end faces by coating the end face of the LD cavity with multiple layers of dielectric materials with different refractive indexes, or a method that generally increases the reflectance of the end face of the T and D resonators.
There was a method to perform chivalry mode multi-axis oscillation, which is a characteristic of his type LD.
加えて元情報処理用光源としてＴ、Ｄ金柑いる際前述の
利得４彼型Ｔ、Ｄでは、非点隔差を有する。In addition, when T and D kumquats are used as original information processing light sources, the above-mentioned gain 4 type T and D have an astigmatic difference.
非点隔差を有するＴ、Ｄの元を微少スボントに集光させ
る場合には光学系が複雑となる。特開昭６０−１４０７
７４．特開昭６０−１５０６８２は、以上の様なことを
考慮して炸裂されたものであった。When condensing the elements of T and D, which have an astigmatism difference, onto a minute spont, the optical system becomes complicated. Japanese Unexamined Patent Publication 1986-1407
74. Japanese Patent Application Laid-Open No. 150682/1982 was developed with the above considerations in mind.
しかし前述の従来技術では以下のような問題点を有する
。However, the above-mentioned conventional technology has the following problems.
ＬＤ共振器端面に誘電体の多層膜コーティングを行ない
端面の反射率を上げて戻シ光雑音を低減させる方法では
、誘電体各層の膜厚をＬＤの出射光波長に対して旧篠な
制御が必要となる。また、端面での反射率が高い為出射
される光の強度が小石くなる。これは高光出力を必要と
する元ディスクへの情報の書き込み等においてＬＤの信
頼性を低下させることになる。In the method of coating the LD resonator end face with a multilayer dielectric film to increase the reflectance of the end face and reduce the reflected light noise, the thickness of each dielectric layer can be controlled in a traditional way with respect to the wavelength of the LD's output light. It becomes necessary. Furthermore, since the reflectance at the end face is high, the intensity of the emitted light becomes small. This reduces the reliability of the LD when writing information to the source disk, etc., which requires high optical output.
縦モードを多軸発去させて戻り光を低減させる方法とし
ては、二重異種接合構造（以下ＤＦ（構造と記す。）を
半導体基板上に形成後、絶縁膜によるストライプ状の窓
を形成したり、亜鉛等をストライプ状に拡散させる等の
方法を用いて電流通路を形成して成る利得導波型のＴ、
Ｄを用いることが考えられる。しかしながら、この種の
ＬＤは、共振器内をレーザ発振光は接合に平行な方向に
屈折率の分布がなく、電流注入により形成される利得の
分布により、共蚤内にレーザ発振光は導波される。した
がってレーザ発振光の等位相面は平面とならず波面収差
を持つ。また、接合に垂直な方向には、ＤＨ構造となっ
ているので屈折率分布を有し、等位相面は平面とな−り
波面収差はほとんど無い。したがって接合に平行および
垂直な方向で非点隔差を生ずる。このような光を微少ス
ポットに集光するには、外部に複雑な光学系が必要とな
る。A method for reducing return light by emitting longitudinal modes on multiple axes is to form a double heterojunction structure (hereinafter referred to as DF (structure)) on a semiconductor substrate, and then form striped windows using an insulating film. A gain waveguide type T formed by forming a current path by using a method such as diffusion of zinc or the like in a stripe shape,
It is possible to use D. However, in this type of LD, the laser oscillation light does not have a refractive index distribution in the direction parallel to the junction within the cavity, and the laser oscillation light is guided within the cavity due to the gain distribution formed by current injection. be done. Therefore, the equiphase front of the laser oscillation light is not a plane but has wavefront aberration. Further, in the direction perpendicular to the junction, since it has a DH structure, it has a refractive index distribution, and the equiphase plane is a plane, so there is almost no wavefront aberration. This results in astigmatic differences in directions parallel and perpendicular to the junction. In order to focus such light onto a minute spot, a complicated external optical system is required.
また、利得導波型ＬＤでは発光部の利得の不均一に供な
い、近視野像が不安定になシ、たとえば元ディスク面上
での微少スポット位置の変動等の問題を生ずる。Further, in a gain waveguide type LD, the gain of the light emitting section becomes non-uniform, the near-field image becomes unstable, and problems such as minute spot position fluctuations on the original disk surface occur.
特開昭６０−１４０７７では、Ｄ［（構造形成前に、複
雑な形状への基板のエツチング、電流狭搾層の形成、そ
の後に電流狭搾層の一部をエンチング除去して！流通路
の形成が必要となる。さらに共振器中央部の利得導波領
域と、共振器端面近傍の屈折率導彼領域の結合効率を高
める為に、各々の領域の活性１−の高さ方向の位置を一
致させることが必要となる。この構造では液相成長法（
以下ＬＰＫ＠と記す。）で成長を行なうことで解決して
いるが、それは基板形状によるに長速度の差を利用した
ものであり、制御が非常に困難となり、再現性・信頼性
の低下という問題を有する。In JP-A No. 60-14077, D Furthermore, in order to increase the coupling efficiency between the gain waveguide region in the center of the resonator and the refractive index guide region near the end face of the resonator, the height direction position of the active layer in each region must be adjusted. This structure requires liquid phase growth (
Hereinafter referred to as LPK@. ), but this takes advantage of the difference in longitudinal speed depending on the substrate shape, which makes control extremely difficult and has the problem of reduced reproducibility and reliability.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、低光出力動作から高光出力動作
まで安定な単一横モード発振を行ない、かつ縦多軸発損
により戻り光雑音を抑え、かつ非点収差のないレーザ光
を放出し、かつ作製が各易なＬＤを提供するところにあ
る。Therefore, the present invention is intended to solve these problems, and its purpose is to perform stable single transverse mode oscillation from low optical output operation to high optical output operation, and to reduce return light by vertical multi-axis oscillation loss. The object of the present invention is to provide an LD that suppresses noise, emits a laser beam without astigmatism, and is easy to manufacture.
不発明のＴ、Ｄば、半導体基板と平行な方向の元導波が
、少なくとも一応の共振器端面近傍では屈折率専政によ
ってなさｎｌそれ以外の領域では利得導波によってなさ
れることを特徴とする。The uninvented T and D are characterized in that the original waveguide in the direction parallel to the semiconductor substrate is performed by refractive index control at least in the vicinity of the cavity end face, and is performed by gain waveguide in the other region. do.
本発明の上記の構成によれば、共振器中央部では、利得
４彼によりレーザ発振光が導波される為戻り光准廿の少
ない縦多モード発振を行ない、かつ出射端面近傍では屈
折率４反機構によりレーザ発撮元が導波嘔れる為Ｖこ、
非点隔差の極めて少ないレーザ発振光が、端面より出射
される。According to the above configuration of the present invention, in the central part of the resonator, the laser oscillation light is guided by a gain of 4, so longitudinal multimode oscillation with less return light is performed, and in the vicinity of the output end face, the refractive index is 4. Due to the anti-mechanism, the laser emission source is waveguided, so V
Laser oscillation light with extremely small astigmatism difference is emitted from the end face.
（実施例１）
第１図は本発明における斜視図である。第１図に示す本
発明の構造を、第２図に示すプロセス工程を用いて説明
する。以下そのプロセスを第２図と用いて説明する。(Example 1) FIG. 1 is a perspective view of the present invention. The structure of the present invention shown in FIG. 1 will be explained using the process steps shown in FIG. The process will be explained below using FIG. 2.
ここでは、化合物手導体の代表でるるＡＪｔＧａＡｓ系
で説明するが他の化合物中導体についても同様に構成で
さることは明白である。Although the AJtGaAs system, which is a representative compound conductor, will be explained here, it is obvious that other compound conductors can be similarly constructed.
最初にＧａＡｌ１１基板（２０１）に、ＧａＡｓ パン
ファー層（２０２） 、 ＡＩＸＬ）ａｌ −３ＡＢ
第１のクランド層（２０３） 、 Ａ１７Ｇａ１−ｙ
Ａａ活性７ｍ（ｚｏ４）。First, on a GaAl11 substrate (201), a GaAs bread layer (202), AIXL)al-3AB
First crund layer (203), A17Ga1-y
Aa activity 7m (zo4).
ＡｌｚＧａｌ−ｚＡｓ 第２のクランド層（２０５、
ＧａＡｓコンタクト層（２０６）より成るＤｒ（構造を
連続して形成する。各層の形成方法は、ＬＰＫ法、ＭＯ
ＣＶＤ法または分子線成長法（以下ＭＢＥ法と記す。〕
等いかなる成長法を用いてもｉＴ能である。次いで改化
シリコンｆｌｕるいは窒化シリコン膜等誘電体膜を形成
した後、第２図（Ｃ）斜線部の如くの形状に、レジスト
によりマスクをする。続いてエツチングを行ない第２図
（ｂ）の如く断面形状となるよう、誘電体膜（２１１）
、コンタクト層（２０６）およびクランド層（２０５）
の一部を除去してリプを形成する。レジストをハクリし
た後リプ上に誘電体膜を載せた状態で埋め込み層（２０
８）を積層する。この積層には減圧状態で行なうＭＯＣ
ｊＶＤ法を用いる。圧力および成長温度を適切に設定す
ることにより、誘電体膜上への成長はなく誘電体膜の存
在しない基板上にのみ埋め込み、層（２０８）を形成す
ることができる。埋め込み層（２０８）の材料は、種々
の材料が可能である。活性層（２０４）よりもエネルギ
ーギャップの小なる材料で埋め込んだ場合、リプストラ
イプ外領域での発光は、エネルギーギャップの小なる埋
め込み層で吸収される。すなわち接合に平行な方向に損
失によ多形成される屈折率差が生じ、屈折率導波型のＴ
、Ｄとなる。AlzGal-zAs second crund layer (205,
A Dr (structure) consisting of a GaAs contact layer (206) is formed continuously.The method for forming each layer is LPK method, MO
CVD method or molecular beam growth method (hereinafter referred to as MBE method)
No matter what growth method is used, it is possible to achieve iT performance. Next, after forming a dielectric film such as a modified silicon fluoride film or a silicon nitride film, a resist is used to mask the dielectric film in the shape shown in the shaded area in FIG. 2(C). Subsequently, the dielectric film (211) is etched to have a cross-sectional shape as shown in FIG. 2(b).
, contact layer (206) and ground layer (205)
Remove a part of the lip to form a lip. After peeling off the resist, place the buried layer (20
8) Layer. This lamination is carried out under reduced pressure using MOC.
jVD method is used. By appropriately setting the pressure and growth temperature, the layer (208) can be formed without growing on the dielectric film and buried only on the substrate where no dielectric film is present. The buried layer (208) can be made of various materials. If the active layer (204) is filled with a material having a smaller energy gap than the active layer (204), the light emitted in the region outside the lipstripe is absorbed by the buried layer having a smaller energy gap. In other words, a refractive index difference occurs due to loss in the direction parallel to the junction, and the refractive index waveguide type T
, D.
一方埋め込み１脅を、活性層（２０４）よりもエネルギ
ーギャップの大なる材料とした場合、接合に平行な方向
に、複素屈折率の実数部による屈折率差が形成され、前
述同様に屈折率ｉｌＷ型のＬＤとなる。On the other hand, if the buried material is made of a material with a larger energy gap than the active layer (204), a refractive index difference due to the real part of the complex refractive index is formed in the direction parallel to the junction, and as described above, the refractive index ilW It becomes the LD of the type.
以上述べたことは、リプ導波路の幅が狭い場合、すなわ
ち本発明のＴ、Ｄでは共振器端面近傍にて有効となる。The above description becomes effective when the width of the lip waveguide is narrow, that is, near the resonator end face in T and D of the present invention.
したがってリブ幅を適切に選択することで、共振器端面
近傍に屈折率導波型のＬＤの形成が可能となる。共振器
中央部近では、リブ幅を広げることで、利得導波型とな
る。Therefore, by appropriately selecting the rib width, it is possible to form a refractive index waveguide type LD near the resonator end face. By widening the rib width near the center of the resonator, it becomes a gain waveguide type.
また埋め込み層の導電性を、コンタクト層（２０６）ま
たはクランド層（２０５）と逆の導電性とする。Further, the conductivity of the buried layer is set to be opposite to that of the contact layer (206) or the ground layer (205).
あるいは高抵抗層とすることで電流狭搾機能を持たせる
ことが出来る。続いてリプ上の誘電体膜（２０７） ’
ｉエツチング除去し、ウエノ）両面に電極（２０９，２
１０）を形成して、本発明のＬＤを炸裂することができ
る。Alternatively, by using a high resistance layer, a current narrowing function can be provided. Next, the dielectric film (207) on the lip
Remove the etching and apply electrodes (209, 2) on both sides.
10) can be formed to explode the LD of the present invention.
（実施例２）
第５図に別の実施例を示す。本実施例ば（実施例１）に
おいて、リプ形成の際活性層よシ基板側へさらにエツチ
ングを進め、第３図の端面に示す如くリプ形状として、
その後（実施例１）に記述した如くＭＯＣＶＤ法による
選択成長を行ない、リプを埋め込む。以下の工程は（実
施例１）と同様にして、本実施例を炸裂できる。(Example 2) Another example is shown in FIG. In this example (Example 1), when forming the lip, etching was further carried out from the active layer to the substrate side, and the lip shape was formed as shown in the end face of FIG.
Thereafter, as described in Example 1, selective growth is performed using the MOCVD method to embed the lip. The following steps can be performed in the same manner as (Example 1) to explode this example.
埋め込み層（３０１）ｉｄ高抵抗層とすることで電流狭
搾機叱を持たせることが出来る。By making the buried layer (301) a high resistance layer, it is possible to provide current narrowing.
以上述べたように発明によれば以下のような効果が得ら
れる。As described above, according to the invention, the following effects can be obtained.
１）共振器中央部では、利得導波機構による光の導彼が
さｎでいるので、、Ｕ多軸モード発振となり、戻り光に
よる雑音の影響を極力抑えることが出来る。1) In the center of the resonator, the light is guided by the gain waveguide mechanism, so U multi-axis mode oscillation occurs, and the influence of noise due to the returned light can be suppressed as much as possible.
２）共振器端部は屈折率導波機構による元の４彼がされ
る構造としているので、ＤＩ（構造の積層方向訃よび積
層に平行方向との間で生ずる非点収差を極力小さな値と
することが出来る。2) Since the resonator end has a structure in which the original four-dimensional structure is formed using a refractive index waveguide mechanism, DI (astigmatism that occurs between the stacking direction of the structure and the direction parallel to the stacking) is kept to a minimum value. You can.
５）戻り光雑音が低く抑えられる構造となっているので
、通常行なわれている共振器端面への高反射率膜形成の
工程が不必要となり工程の簡略化へとつながる。5) Since the structure suppresses the return optical noise to a low level, the normally performed process of forming a high reflectance film on the end face of the resonator is unnecessary, leading to process simplification.
４）非点収差を極力小さくする構造となっているので、
複雑な光学系を必要とすることなく微小スボント集光す
ることが出来る。4) The structure minimizes astigmatism, so
It is possible to focus light on a minute spont without requiring a complicated optical system.
５）ＬＰＥ法により埋め込みを行なう際には、通常、埋
め込み層がリプ上に成長しないように、Ａ！Ｇ ａ Ａ
ａ 系Ｔ、Ｄではリプの最上層は上側クランド層と
なっている。したがって埋め込み成長後の電極形成にお
いて、亜鉛等の不純物’ｒ ＩＪプ上に選択的に拡散さ
せる工程が必要となる。−力木構造ではＭＯＣＯＤ法の
選択成長すなわちキャンプ層上に絶縁層を載せた後の成
長により形成するので、拡散工程を必要とせず工程が簡
略化できる。5) When performing embedding using the LPE method, A! G a A
In a-systems T and D, the top layer of lip is the upper crund layer. Therefore, in forming the electrode after the buried growth, a step of selectively diffusing impurities such as zinc onto the IJ layer is required. - Since the strength tree structure is formed by selective growth using the MOCOD method, that is, by growth after placing an insulating layer on the camp layer, the process can be simplified without requiring a diffusion process.
６）本発明の’ＬＤは戻り光雑音等の影９を受けにくい
構造のＬＤであるので、共振器端面の片側を低反射率、
もう片面を高反射率の端面となるよう、誘屯体膜の撰者
等により形成すれば、雑音に影響されにくくかつ高光出
力の出せるＬＤとなる。6) Since the LD of the present invention has a structure that is less susceptible to the effects of return light noise, etc., one side of the resonator end face has a low reflectance.
If the other side is formed by a person who selects a dielectric film so as to have a high reflectance end face, an LD that is not easily affected by noise and can produce a high optical output can be obtained.
７）埋め込み層の屈折率を摘切に選ぶことによシ、光出
射端面での近視野像の大きさを調整することが出来、高
光出力化に対し有効な手段となる。7) By carefully selecting the refractive index of the buried layer, the size of the near-field image at the light-emitting end face can be adjusted, which is an effective means for increasing light output.
第１図は本発明のＴ、Ｄの一実施例を示す斜視図、第２
図（ａ）〜（ｅ）は本発明のＴ、Ｄを実現する為の作製
工程図、
第３図は本発明のＩ、Ｄの一実施例を示す斜視図。
２０１・・・・・・ＧａＡｓ基板
２０２・・・・・・ＧａＡ日バンファ層２０３ ・・・
”４ＸＧａｌ−ＸＡＳ 第１のクランド層２０４−＝Ａ
１ｙＧａ１−ｙＡｓ活性層２０５・・・・・・ＡｊｚＧ
ａｌ−ＺＡ８第２のクランド層２０６・・・・・・Ｇａ
Ａθコンタクト層２０７・・・・・・誘電体嘆
２０８・・・・・・埋め込み層
２０９．２１０・・・・・・電極
３０１・・・・・・埋め込み層
以 上FIG. 1 is a perspective view showing one embodiment of T and D of the present invention, and FIG.
Figures (a) to (e) are manufacturing process diagrams for realizing T and D of the present invention, and Fig. 3 is a perspective view showing an embodiment of I and D of the present invention. 201...GaAs substrate 202...GaA buffer layer 203...
"4XGal-XAS 1st clandestine layer 204-=A
1yGa1-yAs active layer 205...AjzG
al-ZA8 second ground layer 206...Ga
Aθ contact layer 207...Dielectric layer 208...Buried layer 209.210...Electrode 301...Buried layer or above
Claims (1)
共振器端面近傍では、屈折率導波によつてなされ、それ
以外の領域では、利得導波によつてなされることを特徴
とする半導体レーザ。A semiconductor laser characterized in that optical waveguide in a direction parallel to a semiconductor substrate is performed by refractive index waveguide at least in the vicinity of a resonator end face, and by gain waveguide in the other region. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25753886A JPS63110784A (en) | 1986-10-29 | 1986-10-29 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25753886A JPS63110784A (en) | 1986-10-29 | 1986-10-29 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63110784A true JPS63110784A (en) | 1988-05-16 |
Family
ID=17307674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25753886A Pending JPS63110784A (en) | 1986-10-29 | 1986-10-29 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63110784A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113405A (en) * | 1989-12-12 | 1992-05-12 | U.S. Philips Corp. | Semiconductor diode laser having a stepped effective refractive index |
-
1986
- 1986-10-29 JP JP25753886A patent/JPS63110784A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113405A (en) * | 1989-12-12 | 1992-05-12 | U.S. Philips Corp. | Semiconductor diode laser having a stepped effective refractive index |
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