JPS63107073A - Manufacture of thin film solar cell - Google Patents
Manufacture of thin film solar cellInfo
- Publication number
- JPS63107073A JPS63107073A JP62158243A JP15824387A JPS63107073A JP S63107073 A JPS63107073 A JP S63107073A JP 62158243 A JP62158243 A JP 62158243A JP 15824387 A JP15824387 A JP 15824387A JP S63107073 A JPS63107073 A JP S63107073A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- layer
- solar cell
- transparent resin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010409 thin film Substances 0.000 title claims description 8
- 229920005989 resin Polymers 0.000 claims abstract description 81
- 239000011347 resin Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004642 Polyimide Substances 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 8
- -1 ether ketone Chemical class 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 2
- 229920006393 polyether sulfone Polymers 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 abstract description 25
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 230000035882 stress Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、耐熱性透明樹脂をもちいて可撓性のある薄膜
太陽電池を作る製造法に間するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a flexible thin film solar cell using a heat-resistant transparent resin.
従来の技術
従来、この種の太陽電池の製造法は大別して第３図のＡ
、Ｂに示すように、２つのタイプがある。Ａのタイプは
、現在のガラス基板太陽電池の製造方法に採用されてい
るもので、透明基板１３上に透明電極層３．アモルファ
スＳｉ層４．金属電極層５を順次形成し太陽電池を作っ
た後、デバイス保護のため、保護樹脂６を形成したのち
透明基板１３側から光１０が入射する。Ｂのタイプは、
可撓性の要求される太陽電池に採用されているもので、
支持基板ｌｌ上に耐熱性絶縁層１２を形成した基板を用
いて、金属電極層５．アモルファスＳｉ層４．透明電極
層３を順次形成して太陽電池を形成したのちデバイス保
護のため、透光性保護膜１４を形成する。なお、透光性
保護膜１４側から光ｌＯは入射される。なおこの種の太
陽電池のほかに、ステンレス基板の上に透光性絶縁膜を
形成するものもあるが、太陽電池をＢのタイプのように
形成して太陽電池に製膜し次に保護用樹脂を塗布し太陽
電池を形成するものであるがこの方法の特徴は、製膜面
についている耐熱製基板をエツチング等により除去する
ことであり、太陽電池の支持基板は保護用樹脂である。Conventional technology Conventionally, the manufacturing method of this type of solar cell can be roughly divided into A in Fig. 3.
,B, there are two types. Type A is used in the current manufacturing method of glass substrate solar cells, and includes a transparent electrode layer 3 on a transparent substrate 13. Amorphous Si layer 4. After forming a solar cell by sequentially forming metal electrode layers 5 and forming a protective resin 6 to protect the device, light 10 is incident from the transparent substrate 13 side. The type of B is
It is used in solar cells that require flexibility.
A metal electrode layer 5. Amorphous Si layer 4. After the transparent electrode layers 3 are sequentially formed to form a solar cell, a transparent protective film 14 is formed to protect the device. Note that the light IO is incident from the transparent protective film 14 side. In addition to this type of solar cell, there are also types in which a transparent insulating film is formed on a stainless steel substrate. A solar cell is formed by applying a resin, and the feature of this method is that the heat-resistant substrate attached to the film forming surface is removed by etching or the like, and the supporting substrate of the solar cell is a protective resin.
発明が解決しようとする問題点
従来のＢタイプの製造方法は可撓性のある太陽電池に採
用され、支持基板のうえに耐熱性絶縁層を形成して耐熱
性絶縁層の上に、金属電極層、アモルファスＳｉ層、透
明電極層、透明保護膜層を順次形成して構成されていた
。しかしながら、アモルファスＳｉ太陽電池の性質上ア
モルファスＳ１層においては、Ｐ型層、■型層、Ｎ型層
と順次形成するのがボロンの拡散による１層中のドナー
準位の補償の点から望ましい、しかしながら、この場合
のＢタイプの従来の可撓性太陽電池においては、アモル
ファスＳｉ層を、Ｐ型層、■型層。Problems to be Solved by the Invention The conventional B-type manufacturing method is adopted for flexible solar cells, in which a heat-resistant insulating layer is formed on a support substrate, and a metal electrode is formed on the heat-resistant insulating layer. layer, an amorphous Si layer, a transparent electrode layer, and a transparent protective film layer were formed in this order. However, due to the nature of an amorphous Si solar cell, it is desirable to form a P-type layer, a ■-type layer, and an N-type layer in sequence in the amorphous S1 layer in order to compensate for the donor level in one layer due to boron diffusion. However, in the conventional B-type flexible solar cell in this case, the amorphous Si layer is divided into a P-type layer and a ■-type layer.
Ｎ型層と形成しても、光の入射方向はＮ型層側からとし
なければならない。光の入射方向も、アモルファスＳｉ
層に対しては、Ｐ型層側から入光するのが光劣化防止、
ホールの移動度、ＳｉＣを使用した窓効果を利用する点
で望ましい。そのため、Ｂタイプの太陽電池では、Ａタ
イプの太陽電池と比較して初期の光照射時の短絡電流値
が少なく、９０％程度の電流値であり、光照射試験後は
、短絡電流値で初期値に比べ５０％以上小さくなるとい
う光劣化現象を示していた。またＡタイプとして、特公
昭６２−２２２７４号公報に示されたようにポリエーテ
ル・エーテルケトン等の耐熱性透明樹脂フィルムを透明
基板にもちいて、耐熱性透明樹脂フィルム基板、透明型
ｉｉ、アモルファスＳｔ層（Ｐ型層、■型層、Ｎ型Ｎ）
、金属電極層を順次形成すると、太陽電池の光電特性面
ではガラス基板で作った太陽電池とほぼ同等な性能を得
る事ができ、かつ光劣化もガラス基板太陽電池と同様な
性能を得るはずである。しかしながら、フィルム膜厚を
およそ３０μとした場合透明電極層、アモルファスＳｉ
層、金属電極層等を製膜した際に、各層の製膜時、各層
の膜より生じる応力、および耐熱性透明樹脂フィルムに
かかる各製膜時の熱的ストレス（１５０℃〜３００’Ｃ
）により耐熱性透明樹脂フィルムが熱収縮応力でカーリ
ング（反り）を生じてしまう。太陽電池の直列結線をす
るためにはメタルマスクを使用して各層をパターンニン
グするため、メタルマスクの基板に対する位置合わせが
必要であるが、この耐熱性透明樹脂フィルムのカーリン
グにより、メタルマスクの耐熱性透明樹脂フィルムに対
する位置合わせが難しかった。耐熱性透明樹脂フィルム
のカーリングを防ぐために耐熱性透明樹脂フィルムの厚
さを増すと、耐熱性透明樹脂フィルムによって光が吸収
される量が増え、太陽電池の発電領域に到達する光量が
落ちて、発電量が少なくなり太陽電池特性上、Ａタイプ
よりも劣り、実用に耐えないという問題があった。また
Ｎ膜中耐熱性透明樹脂がカーリングするためと思われる
が、ＰＩＮ接合が確保できないためにショート不良、ま
たはフィルファクター（Ｆ、Ｆ、）の低下を招いていた
。Even if it is formed with an N-type layer, the direction of light incidence must be from the N-type layer side. The incident direction of light is also amorphous Si.
For the layer, entering light from the P-type layer side prevents photodeterioration.
It is desirable in that it utilizes the mobility of holes and the window effect using SiC. Therefore, in the B type solar cell, the short circuit current value at the time of initial light irradiation is lower than that of the A type solar cell, and the current value is about 90%, and after the light irradiation test, the short circuit current value is lower than that of the A type solar cell. It showed a photodegradation phenomenon in which the value decreased by more than 50% compared to the actual value. In addition, as type A, as shown in Japanese Patent Publication No. 62-22274, a heat-resistant transparent resin film such as polyether or ether ketone is used as a transparent substrate, and a heat-resistant transparent resin film substrate, transparent type II, amorphous St. Layer (P type layer, ■ type layer, N type N)
By sequentially forming metal electrode layers, it is possible to obtain photoelectric properties of the solar cell that are almost equivalent to solar cells made with glass substrates, and the photodegradation should be similar to that of glass substrate solar cells. be. However, when the film thickness is approximately 30μ, the transparent electrode layer, amorphous Si
When forming layers, metal electrode layers, etc., the stress generated by each layer, and the thermal stress (150°C to 300°C) applied to the heat-resistant transparent resin film during each film forming.
), the heat-resistant transparent resin film curls (warps) due to heat shrinkage stress. In order to connect solar cells in series, each layer is patterned using a metal mask, so it is necessary to align the metal mask with the substrate. Positioning against transparent resin film was difficult. Increasing the thickness of the heat-resistant transparent resin film to prevent curling of the heat-resistant transparent resin film increases the amount of light absorbed by the heat-resistant transparent resin film, reducing the amount of light that reaches the power generation area of the solar cell. There was a problem that the amount of power generation was reduced and the solar cell characteristics were inferior to Type A, making it unsuitable for practical use. Furthermore, it is thought that the heat-resistant transparent resin in the N film curls, but PIN bonding cannot be ensured, leading to short-circuit failures or a decrease in fill factor (F, F,).
本発明はこのような問題点を解決するもので、耐熱性透
明樹脂を基板としてガラス基板太陽電池と同等な性能を
得る事を目的とするものである。The present invention is intended to solve these problems, and aims to obtain performance equivalent to that of a glass substrate solar cell using a heat-resistant transparent resin as a substrate.
問題点を解決するための手段
この問題を解決するための手段として、本発明では支持
基板上に耐熱性透明樹脂層を形成し、その後耐熱性透明
樹脂層を支持基板から剥離することを特徴とする。好ま
しくは支持基板で固定した耐熱性透明樹脂層上に順次透
明電極層、アモルファスＳｉ層、金属電極層、保護樹脂
層を形成し、その後に耐熱性透明樹脂層を水等の液中に
浸漬して、水を支持基板と耐熱性透明樹脂層に間に浸入
させることにより耐熱性透明樹脂層を支持基板から剥離
し、可撓性のある太陽電池を形成する工程をとるもので
ある。この様にすれば、前記透明耐熱性樹脂上で素子の
製膜を行う際に、前記支持基板と耐熱性透明樹脂を一体
化したので、耐熱性透明樹脂層を確実に固定でき、素子
製膜時の耐熱性透明樹脂の熱収縮応力によるカーリング
を防ぎ、マスクによる製膜のパターンニングの位置合わ
せな容易にできる。また前記支持基板から、前記耐熱性
透明樹脂層を剥離した際、成膜時の各極膜の応力および
製膜温度により耐熱性透明樹脂層がカーリングしないよ
うに耐熱性透明樹脂面に各種製膜後、保護樹脂を塗布し
硬化させた後に、耐熱性透明樹脂から支持基板を剥離す
る。この保護樹脂の支持により耐熱性透明樹脂のカーリ
ングを矯正する事も可能である。さらに支持基板から耐
熱性透明樹脂を剥離するには、例えばスクレーバ等の治
具を両面の界面に差し込んで強制的な機械的剥離手段で
剥すことも可能である。Means for Solving the Problem As a means for solving this problem, the present invention is characterized in that a heat-resistant transparent resin layer is formed on a support substrate, and then the heat-resistant transparent resin layer is peeled off from the support substrate. do. Preferably, a transparent electrode layer, an amorphous Si layer, a metal electrode layer, and a protective resin layer are sequentially formed on a heat-resistant transparent resin layer fixed on a support substrate, and then the heat-resistant transparent resin layer is immersed in a liquid such as water. Then, the heat-resistant transparent resin layer is peeled off from the supporting substrate by allowing water to penetrate between the supporting substrate and the heat-resistant transparent resin layer, thereby forming a flexible solar cell. In this way, when forming an element film on the transparent heat-resistant resin, since the supporting substrate and the heat-resistant transparent resin are integrated, the heat-resistant transparent resin layer can be securely fixed, and the element film formation It prevents curling due to heat shrinkage stress of the heat-resistant transparent resin, and facilitates alignment during film formation patterning using a mask. Furthermore, when the heat-resistant transparent resin layer is peeled off from the supporting substrate, various films are formed on the heat-resistant transparent resin surface to prevent the heat-resistant transparent resin layer from curling due to the stress of each electrode film and the film-forming temperature during film formation. After that, a protective resin is applied and cured, and then the support substrate is peeled off from the heat-resistant transparent resin. It is also possible to correct curling of the heat-resistant transparent resin by supporting this protective resin. Furthermore, in order to peel off the heat-resistant transparent resin from the support substrate, it is also possible to insert a jig such as a scraper into the interface between both surfaces and perform forced mechanical peeling.
作用
この構成により、耐熱性透明樹脂を支持基板に塗布硬化
して形成し、その基板を工程中使用すれば後の工程は従
来のガラス基板を使用したＡの工程と代わりなく行う事
ができる。従って、現在大量に生産されているガラス基
板太陽電池と同等な生産ラインで生産を行う事ができる
。この場合、太陽電池の光電特性も、Ｐ型層側からの入
光となるため、Ａタイプと同程度になる。また、耐熱性
透明樹脂フィルムを扱う際に問題となる耐熱性透明樹脂
のカーリングは、この工法をとる限り支持基板から耐熱
性透明樹脂を剥離するまでは何ら問題は生じない。また
、保護樹脂としてエポキシ樹脂を用い塗布硬化させると
、これも太陽電池としての強度向上に貢献するため、耐
熱性透明樹脂層それ自身を薄くできて光透過率も向上す
る。With this configuration, if a heat-resistant transparent resin is applied and cured on a support substrate and that substrate is used during the process, subsequent steps can be performed in the same way as step A using a conventional glass substrate. Therefore, production can be carried out on the same production line as glass substrate solar cells that are currently being produced in large quantities. In this case, the photoelectric characteristics of the solar cell are also comparable to those of the A type because light enters from the P-type layer side. Further, curling of the heat-resistant transparent resin, which is a problem when handling the heat-resistant transparent resin film, does not occur until the heat-resistant transparent resin is peeled off from the supporting substrate as long as this method is used. Furthermore, when an epoxy resin is applied and cured as a protective resin, this also contributes to improving the strength of the solar cell, allowing the heat-resistant transparent resin layer itself to be made thinner and improving light transmittance.
実施例 以下、本発明の一実施例を第１図に基づいて説明する。Example An embodiment of the present invention will be described below with reference to FIG.
ガラス支持基板１上に例えば芳香族テトラカルボン酸無
水物（３，３’ 、４．４’−ビフェニルテトラカルボ
ン酸無水物）と芳香族ジアミン（３，３’ジアミノジフ
エニルスルフォニノ）を重縮合しポリアミド酸として塗
布し、約３００℃でイミド化させた耐熱性透明樹脂２を
厚さ３０μに形成する。次に、耐熱性透明樹脂２上にメ
タルマスクを用いてマスキングし、例えば電子ビーム蒸
着等の方法で２５０℃に加熱後、酸化インジウム、酸化
スズ等で透明電極Ｎ３を形成する。次に、透明電極層３
上にメタルマスクをもちいてマスキングしプラズマＣＶ
Ｄ装置中で約２００℃でアモルファスＳｉＦ！４を堆積
させる。次にメタルマスクをもちいてマスキングし例え
ば電子ビーム蒸着等でＡｔ電極等の、金属電極層５を形
成する。これらの方法によりアモルファスＳｉ太陽電池
ができる。透明電極層３．アモルファスＳｉ層４、金属
電極層５の厚みは合計して約１μである。第２図は、こ
のようにして太陽電池を形成した上に保護樹脂６、例え
ばエポキシ樹脂をおよそ６０μ塗布硬化して裏面の保護
膜とし太陽電池素子を保護する。保護樹脂６の硬化後、
ガラス支持基板１から耐熱性透明樹脂２をその上に作っ
た太陽電池とともに剥離するために、約６０℃に加熱し
た水中にいれ５分間浸漬し耐熱性透明樹脂２とガラス支
持基板１との界面より湯を入り込ませて両者を剥離する
。前記ポリイミド耐熱性透明樹脂２は、平滑な面、特に
ガラス面において密着力に弱い。水等の液中に浸漬した
とき、耐熱性透明樹脂２とガラス支持基板１との界面に
水が毛細管現象で浸入し、密着した境界面で耐熱性透明
樹脂２は僅かに膨潤しかつ各層形成時における残留応力
でカーリングがはじまり簡単に剥離ができる。カーリン
グは裏面の保護樹脂層の厚みで調節できる。このことに
より厚さが約０．１ｍｍの薄く、軽い太陽電池素子が形
成できた。使用したガラス支持基板ｌは、再使用可能で
ある。剥離した耐熱性透明樹脂２側に、光ＩＯを入射さ
せる事により、これまでのガラス基板太陽電池と同様な
Ｐ型層側から入光する太陽電池となり太陽光（ＡＭｌ）
１０時間照射試験後の電気特性劣化率はガラス基板Ｐ型
層側人光の太陽電池と同等であった。For example, aromatic tetracarboxylic anhydride (3,3',4,4'-biphenyltetracarboxylic anhydride) and aromatic diamine (3,3'diaminodiphenylsulfonino) are superimposed on the glass support substrate 1. A heat-resistant transparent resin 2 which is condensed, applied as a polyamic acid, and imidized at about 300° C. is formed to a thickness of 30 μm. Next, the heat-resistant transparent resin 2 is masked using a metal mask, heated to 250° C. by a method such as electron beam evaporation, and then a transparent electrode N3 is formed using indium oxide, tin oxide, or the like. Next, transparent electrode layer 3
Mask using a metal mask on top and plasma CV
Amorphous SiF at about 200℃ in apparatus D! Deposit 4. Next, a metal electrode layer 5 such as an At electrode is formed by masking using a metal mask, for example, by electron beam evaporation. These methods produce amorphous Si solar cells. Transparent electrode layer 3. The total thickness of the amorphous Si layer 4 and the metal electrode layer 5 is approximately 1 μm. FIG. 2 shows that a solar cell is formed in this manner, and then a protective resin 6, for example, an epoxy resin of about 60 μm is applied and cured to form a protective film on the back surface to protect the solar cell element. After curing of the protective resin 6,
In order to peel off the heat-resistant transparent resin 2 from the glass support substrate 1 together with the solar cell formed thereon, the interface between the heat-resistant transparent resin 2 and the glass support substrate 1 is removed by immersing it in water heated to about 60° C. for 5 minutes. Add more hot water to separate the two. The polyimide heat-resistant transparent resin 2 has poor adhesion on smooth surfaces, especially glass surfaces. When immersed in a liquid such as water, water enters the interface between the heat-resistant transparent resin 2 and the glass support substrate 1 due to capillary phenomenon, and the heat-resistant transparent resin 2 swells slightly at the close interface, forming each layer. Curling begins due to residual stress and peeling can occur easily. Curling can be adjusted by adjusting the thickness of the protective resin layer on the back. As a result, a thin and light solar cell element with a thickness of about 0.1 mm could be formed. The glass support substrate l used can be reused. By allowing light IO to enter the peeled heat-resistant transparent resin 2 side, it becomes a solar cell that receives light from the P-type layer side, similar to conventional glass substrate solar cells, and generates sunlight (AMl).
The rate of deterioration of electrical properties after the 10-hour irradiation test was equivalent to that of a solar cell with human light on the P-type layer side of the glass substrate.
またＰＩＮ接合も良好に確保できフィルファクター、シ
ョート率も従来のＡタイ・ブの太陽電池と同等であった
。耐熱性透明樹脂２をガラス転移点以上に温度を上げて
も太陽電池電気特性が確認できた。このことから素子製
膜温度よりガラス転移温度の低いポリエチレンテレフタ
レートでも使用できる。なお、ポリイミドにかえてポリ
エーテル・エーテルケトン、ポリエチレンテレフタレー
ト。In addition, the PIN junction was well secured, and the fill factor and short circuit rate were comparable to conventional A-type and B solar cells. Even when the temperature of the heat-resistant transparent resin 2 was raised above the glass transition point, the electrical characteristics of the solar cell could be confirmed. Therefore, polyethylene terephthalate, which has a glass transition temperature lower than the element film forming temperature, can also be used. Note that instead of polyimide, use polyether/etherketone or polyethylene terephthalate.
及びポリエーテルサルホンにつき検討したがこれらの樹
脂の場合でもほぼポリイミドＭＡ脂と同等の工程操作に
より可撓性の薄膜太陽電池を形成できた。又支持基板と
、素子製膜後の樹脂剥離は機械的剥離によって達成でき
た。and polyether sulfone, but even with these resins, flexible thin-film solar cells could be formed using almost the same process operations as with polyimide MA resin. Furthermore, peeling of the supporting substrate and the resin after the device film formation could be accomplished by mechanical peeling.
発明の効果
以上述べてきたように、本発明によれば、工程的に、現
在のガラス基板太陽電池で生産中の設備を共通に使用で
き、可撓性ある薄膜の太陽電池を作る事が可能になった
。この方法による太陽電池は、Ｐ型層入光の太陽電池で
あり、太陽電池特性面でガラス基板太陽電池と同等の性
能を持ち、かつ薄く、軽い。なお、実施例で述べてきた
ガラス支持基板の代りに、ステンレス鋼フープ基板を支
持基板とすると、ロール ツー ロール方式でも使用す
ることができるために高い生産性が期待される。また保
護樹脂と耐熱性透明樹脂とでカーリング応力を支えるた
め耐熱性透明樹脂層を薄くすることができる。現在、耐
熱性透明樹脂はガラスに比較してコストが高いものとな
っているが、本発明によれば、この耐熱性透明樹脂を薄
くする事ができるために耐熱性透明樹脂の使用量が僅か
で済み、ガラスと同等以下のコストで太陽電池を作る事
が可能となる。更に、耐熱性透明樹脂を薄くする事によ
り、耐熱性透明樹脂中での光の吸収損失が減少する事に
なり、太陽電池の発電領域中に到達する光量が増えて発
電電力量の増大につながることになる。又、耐熱性透明
樹脂を薄くする事により、可撓性が増し、よりわん曲や
折り曲げの可能な太陽電池を形成する事ができるという
効果が得られる。Effects of the Invention As described above, according to the present invention, it is possible to use the equipment currently in production for glass substrate solar cells in common, and to produce flexible thin-film solar cells. Became. The solar cell produced by this method is a P-type layered solar cell, has performance equivalent to that of a glass substrate solar cell in terms of solar cell characteristics, and is thin and light. Note that if a stainless steel hoop substrate is used as the support substrate instead of the glass support substrate described in the Examples, high productivity is expected since it can also be used in a roll-to-roll method. Furthermore, since the protective resin and the heat-resistant transparent resin support the curling stress, the heat-resistant transparent resin layer can be made thinner. Currently, heat-resistant transparent resin is more expensive than glass, but according to the present invention, this heat-resistant transparent resin can be made thinner, so the amount of heat-resistant transparent resin used can be reduced. This makes it possible to produce solar cells at a cost equal to or lower than that of glass. Furthermore, by making the heat-resistant transparent resin thinner, the absorption loss of light in the heat-resistant transparent resin is reduced, which increases the amount of light that reaches the power generation area of the solar cell, leading to an increase in the amount of power generated. It turns out. Further, by making the heat-resistant transparent resin thinner, flexibility is increased, and it is possible to form a solar cell that is more bendable and bendable.
第１図は本発明の太陽電池の製造法の一実施例における
工程順の断面図、第２図は本発明の太陽電池の製造法の
一実施例において裏面に保護樹脂を塗布して支持基板を
取り去った断面図、第３図Ａは従来におけるガラス基板
を用いた太陽電池の製造法の工程順の断面図、Ｂは可撓
性基板を用いた製造法の工程順の断面図である。
１−−−−−ガラス支持基板、２−・・・・・耐熱性透
明樹脂層、３ ・−−−−−透明電極層、４−・・・・
・アモルファスＳｉ層、５・・−・・・金属電極層、６
・・・・・・保護樹脂代理人の氏名弁理士 中 尾 敏
男 はか１名１０−一一党
第２図FIG. 1 is a sectional view of the process order in an embodiment of the solar cell manufacturing method of the present invention, and FIG. 2 is a support substrate with a protective resin coated on the back surface in an embodiment of the solar cell manufacturing method of the present invention. FIG. 3A is a cross-sectional view showing the steps of a conventional solar cell manufacturing method using a glass substrate, and FIG. 3B is a cross-sectional view showing the steps of a manufacturing method using a flexible substrate. 1---Glass support substrate, 2---Heat-resistant transparent resin layer, 3---Transparent electrode layer, 4-------
・Amorphous Si layer, 5... Metal electrode layer, 6
・・・・・・Protective resin agent's name Patent attorney Toshio Nakao 1 person 10-11 Party Figure 2
Claims (3)
性透明樹脂上に順次透明電極層、アモルファスＳｉ層、
金属電極層、保護樹脂層を形成し、その後に液中への浸
漬か、又は強制的な機械的剥離手段により耐熱性透明樹
脂を支持基板から剥離し、可撓性のある太陽電池を形成
することを特徴とする薄膜太陽電池の製造法。(1) A heat-resistant transparent resin is formed on a support substrate, and a transparent electrode layer, an amorphous Si layer, and a transparent electrode layer are sequentially formed on the heat-resistant transparent resin.
A metal electrode layer and a protective resin layer are formed, and then the heat-resistant transparent resin is peeled off from the support substrate by immersion in a liquid or by forced mechanical peeling means to form a flexible solar cell. A method for manufacturing a thin film solar cell characterized by:
エーテルケトン、ポリエチレンテレフタレート、及びポ
リエーテルサルホンからなる群のいずれかである特許請
求の範囲第１項記載の薄膜太陽電池の製造法。(2) The heat-resistant transparent resin is polyimide, polyether,
The method for producing a thin film solar cell according to claim 1, wherein the thin film solar cell is any one of the group consisting of ether ketone, polyethylene terephthalate, and polyether sulfone.
基板上の剥離が水中への浸漬処理である特許請求の範囲
第１項記載の薄膜太陽電池の製造法。(3) The method for producing a thin film solar cell according to claim 1, wherein the heat-resistant transparent resin is polyimide, and the peeling from the supporting substrate is performed by immersion in water.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-150288 | 1986-06-26 | ||
| JP15028886 | 1986-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63107073A true JPS63107073A (en) | 1988-05-12 |
Family
ID=15493703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62158243A Pending JPS63107073A (en) | 1986-06-26 | 1987-06-25 | Manufacture of thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63107073A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105581A (en) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| EP0421133A2 (en) * | 1989-09-06 | 1991-04-10 | Sanyo Electric Co., Ltd. | Manufacturing method of a flexible photovoltaic device |
| JPH04196365A (en) * | 1990-11-28 | 1992-07-16 | Sanyo Electric Co Ltd | Manufacture of photovoltage device |
| US5133810A (en) * | 1990-04-27 | 1992-07-28 | Sanyo Electric Co., Ltd. | Flexible photovoltaic device and manufacturing method thereof |
| US5232860A (en) * | 1991-03-28 | 1993-08-03 | Sanyo Electric Co., Ltd. | Method of flexible photovoltaic device manufacture |
| US6096569A (en) * | 1994-11-15 | 2000-08-01 | Mitsubishi Denki Kabushiki Kaisha | Method of and apparatus for manufacturing thin solar battery |
| WO2001004964A1 (en) * | 1999-07-13 | 2001-01-18 | Eidgenössische Technische Hochschule (ETH) | Flexible thin-layer solar cell |
| JP2002031818A (en) * | 2000-07-17 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
| JP2002033464A (en) * | 2000-07-17 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Method for fabricating semiconductor device |
| JP2004287396A (en) * | 2003-03-03 | 2004-10-14 | Hitachi Chem Co Ltd | Optical waveguide film |
| JP2010532575A (en) * | 2007-07-03 | 2010-10-07 | マイクロリンク デバイセズ インコーポレイテッド | III-V compound thin film solar cell |
| WO2012066136A1 (en) | 2010-11-18 | 2012-05-24 | Dsm Ip Assets B.V. | Flexible electrical generators |
-
1987
- 1987-06-25 JP JP62158243A patent/JPS63107073A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105581A (en) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| EP0421133A2 (en) * | 1989-09-06 | 1991-04-10 | Sanyo Electric Co., Ltd. | Manufacturing method of a flexible photovoltaic device |
| US5133810A (en) * | 1990-04-27 | 1992-07-28 | Sanyo Electric Co., Ltd. | Flexible photovoltaic device and manufacturing method thereof |
| JPH04196365A (en) * | 1990-11-28 | 1992-07-16 | Sanyo Electric Co Ltd | Manufacture of photovoltage device |
| US5232860A (en) * | 1991-03-28 | 1993-08-03 | Sanyo Electric Co., Ltd. | Method of flexible photovoltaic device manufacture |
| US6096569A (en) * | 1994-11-15 | 2000-08-01 | Mitsubishi Denki Kabushiki Kaisha | Method of and apparatus for manufacturing thin solar battery |
| WO2001004964A1 (en) * | 1999-07-13 | 2001-01-18 | Eidgenössische Technische Hochschule (ETH) | Flexible thin-layer solar cell |
| JP2002031818A (en) * | 2000-07-17 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
| JP2002033464A (en) * | 2000-07-17 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Method for fabricating semiconductor device |
| JP2004287396A (en) * | 2003-03-03 | 2004-10-14 | Hitachi Chem Co Ltd | Optical waveguide film |
| JP2010532575A (en) * | 2007-07-03 | 2010-10-07 | マイクロリンク デバイセズ インコーポレイテッド | III-V compound thin film solar cell |
| US10923617B2 (en) | 2007-07-03 | 2021-02-16 | Microlink Devices, Inc. | Methods for fabricating thin film III-V compound solar cell |
| US11901476B2 (en) | 2007-07-03 | 2024-02-13 | Microlink Devices, Inc. | Methods for fabricating thin film III-V compound solar cell |
| WO2012066136A1 (en) | 2010-11-18 | 2012-05-24 | Dsm Ip Assets B.V. | Flexible electrical generators |
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