JPS63100179A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPS63100179A JPS63100179A JP24624686A JP24624686A JPS63100179A JP S63100179 A JPS63100179 A JP S63100179A JP 24624686 A JP24624686 A JP 24624686A JP 24624686 A JP24624686 A JP 24624686A JP S63100179 A JPS63100179 A JP S63100179A
- Authority
- JP
- Japan
- Prior art keywords
- holder
- energy ion
- ion source
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 36
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 230000008020 evaporation Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 30
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、イオンビーム照射と真空蒸着を併用して基
板表面に膜を形成する膜形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a film forming apparatus that forms a film on a substrate surface using a combination of ion beam irradiation and vacuum evaporation.
従来、この種の装置は、単一のイオン源(あるいはイオ
ン源を含むビームライン)と単一の蒸発源との組合わせ
で構成されていた。Conventionally, this type of apparatus has been configured with a combination of a single ion source (or a beam line including the ion source) and a single evaporation source.
ところが、単一のイオン源で引き出せるイオンビームの
エネルギーの下限は、実用的な点も考慮すると、せいぜ
い最大の1桁下程度までである。However, the lower limit of the energy of the ion beam that can be extracted by a single ion source is at most one order of magnitude lower than the maximum, considering practical considerations.
例えば、最大エネルギーが40KeVのイオン源から引
出し得るイオンビームのエネルギーの下fflは2〜5
KeV程度である。これは、プラズマから引き出される
イオンが引出し電極部において空間電荷効果によって抑
制されるためで、引出し電圧が低くなるにつれてその空
間電荷効果の影響が大きくなり、イオンビームの引出し
が難しくなるからである。For example, the lower ffl of the ion beam energy that can be extracted from an ion source with a maximum energy of 40 KeV is 2 to 5
It is about KeV. This is because ions extracted from the plasma are suppressed by the space charge effect at the extraction electrode portion, and as the extraction voltage decreases, the influence of the space charge effect increases, making it difficult to extract the ion beam.
ところで、基板に対する結晶成長の点から考えると、高
エネルギー(例えばI KeV以上)のイオンビームを
照射することは、膜形成は可能であるが膜中に多大な損
傷を残すことになる。従ってこの場合は、低エネルギー
(例えばI KeV未満)のイオンビームを用いること
が望ましい。一方、形成した膜と基板との密着力を増加
させるには、高エネルギーのイオンビームの照射により
、膜と基板との境界部に両者の混合層を積極的に形成す
ることが望ましい。By the way, from the point of view of crystal growth on the substrate, irradiation with an ion beam of high energy (for example, I KeV or more) allows film formation, but leaves a large amount of damage in the film. Therefore, in this case, it is desirable to use an ion beam with low energy (for example, less than I KeV). On the other hand, in order to increase the adhesion between the formed film and the substrate, it is desirable to actively form a mixed layer of both at the boundary between the film and the substrate by irradiation with a high-energy ion beam.
しかしながら、これらの必要性は、上述の通り単一のイ
オン源では満足し得ない。However, these needs cannot be met with a single ion source, as discussed above.
そこでこの発明は、この点を改善した膜形成装置を提供
することを目的とする。Therefore, an object of the present invention is to provide a film forming apparatus that improves this point.
この発明の膜形成装置は、真空容器内に設けられていて
基板を保持可能なホルダと、互いに異なる方向からホル
ダの方に向けられていて相対的に高エネルギーのイオン
ビームを発生し得る高エネルギーイオン源と相対的に低
エネルギーのイオンビームを発生し得る低エネルギーイ
オン源を少なくとも1台ずつと、ホルダの向きを変えて
そこに保持された基板表面の向きを高エネルギーイオン
源側と低エネルギーイオン源側とに変更できる機能を少
なくとも有するホルダ駆動装置と、1台以上の蒸発源で
あってホルダの向きの変更に拘らずその内の少なくとも
1台がホルダに保持された基板表面の方に向くように配
置されたものとを備えることを特徴とする。The film forming apparatus of the present invention includes a holder that is provided in a vacuum container and can hold a substrate, and a high-energy ion beam that can generate relatively high-energy ion beams that are directed toward the holder from different directions. Install at least one low-energy ion source that can generate an ion beam with low energy relative to the ion source, and change the orientation of the holder so that the surface of the substrate held there is facing the high-energy ion source and the low-energy ion source. a holder driving device having at least a function that can be changed to the ion source side; and one or more evaporation sources, at least one of which is directed toward the substrate surface held by the holder regardless of the change in the orientation of the holder. The invention is characterized by comprising: a.
ホルダ駆動装置によってそこに保持された基板表面の向
きを高エネルギーイオン源側と低エネルギーイオン源側
とに変更することができる。従って例えば、基板と膜と
の密着力を良好なものにするためには高エネルギーイオ
ン源と蒸発源の組合わせを用いて高エネルギーのイオン
ビーム照射と真空蒸着を併用することができ、また照射
損傷を少なくして膜形成するためには低エネルギーイオ
ン源と蒸発源の組合わせを用いて低エネルギーのイオン
ビーム照射と真空蒸着を併用することができる。その結
果、密着力が良好でしかも・損傷の少ない膜を基板表面
に形成することができる。The orientation of the substrate surface held there by the holder drive device can be changed between a high energy ion source side and a low energy ion source side. Therefore, for example, in order to improve the adhesion between the substrate and the film, it is possible to use a combination of a high-energy ion source and an evaporation source, and to use high-energy ion beam irradiation and vacuum evaporation together, or In order to form a film with less damage, a combination of a low energy ion source and an evaporation source can be used to combine low energy ion beam irradiation and vacuum evaporation. As a result, a film with good adhesion and less damage can be formed on the substrate surface.
第1図は、この発明の一実施例に係る膜形成装置を示す
概略図である。図示しない真空ポンプによって所定の真
空に排気される真空容器2内に、基板4を保持可能なホ
ルダ6が設けられている。FIG. 1 is a schematic diagram showing a film forming apparatus according to an embodiment of the present invention. A holder 6 capable of holding a substrate 4 is provided in a vacuum container 2 that is evacuated to a predetermined vacuum by a vacuum pump (not shown).
そしてこの例ではホルダ6の後述する矢印Aのような回
転中心に対してほぼ左右対称な所に、相対的に高エネル
ギー(例えばIKeV〜50KeV程度の範囲)のイオ
ンビーム12を発生し得る高エネルギーイオン源10と
相対的に低エネルギー(例えば50eV〜IKeV程度
の範囲)のイオンビーム16を発生し得る低エネルギー
イオン源14とがそれぞれ1台ずつ斜め下方からホルダ
6の方に向けて配置されている。In this example, a high-energy ion beam 12 capable of generating a relatively high-energy ion beam 12 (for example, in the range of IKeV to 50KeV) is placed at a location approximately symmetrical about the center of rotation of the holder 6, as indicated by an arrow A, which will be described later. An ion source 10 and a low energy ion source 14 capable of generating an ion beam 16 with relatively low energy (for example, in the range of about 50 eV to IKeV) are arranged diagonally downward toward the holder 6. There is.
ホルダ6はホルダ駆動装置8に取り付けられており、当
該ホルダ駆動装置8は、ホルダ6を矢印Aのように回転
させてそこに保持された基板4の表面の向きを高エネル
ギーイオン源10側と低エネルギーイオン源14側とに
変更できる機能を有する。更にこの例ではホルダ駆動装
置8は、ホルダ6を例えば矢印Bのように回転させて基
板4をその面内で回転させる機能をも有する。もっとも
この矢印Bのような回転機能は、基板4のサイズが小さ
い場合は必ずしも必要無い場合もある。The holder 6 is attached to a holder driving device 8, and the holder driving device 8 rotates the holder 6 in the direction of arrow A to orient the surface of the substrate 4 held thereto toward the high-energy ion source 10. It has a function that can be changed to the low energy ion source 14 side. Furthermore, in this example, the holder driving device 8 also has a function of rotating the holder 6 in the direction of arrow B, for example, and rotating the substrate 4 within its plane. However, this rotation function as indicated by arrow B may not necessarily be necessary if the size of the substrate 4 is small.
さらにこの例では真空容器2内のホルダ6の下方であっ
てホルダ6の矢印Aのような回転中心に対してほぼ左右
対称な所に、蒸発物質20および24をそれぞれ発生し
得る2台の蒸発源18および22がそれぞれ配置されて
おり、前者は高エネルギーイオン源10側に向けられた
基板4の表面の方に、後者は低エネルギーイオン源14
側に向けられた基板4の表面の方にそれぞれ向くように
されている。Furthermore, in this example, two evaporators are installed below the holder 6 in the vacuum container 2 and are approximately symmetrical with respect to the center of rotation of the holder 6 as indicated by the arrow A. Sources 18 and 22 are respectively arranged, the former towards the surface of the substrate 4 facing the high energy ion source 10 and the latter towards the low energy ion source 14.
They are each oriented towards the surface of the substrate 4 which is oriented to the side.
上記装置によれば、イオンビーム照射と真空蒸着の併用
、即ち両者の同時使用あるいは交互使用によって基板4
の表面に膜形成を行う場合に、基板4と膜との密着力を
良好なものとするために膜形成の初期において基板4を
高エネルギーイオン源10側に向けてそれと蒸発源18
との組合わせを用いて高エネルギーイオンビーム12の
照射と真空蒸着を併用することができ、更に主な目的で
ある膜形成のためには膜に対する照射損傷を最小限にす
るために基板4を低エネルギーイオン源14側に向けて
それと蒸発源22の組合わせを用いて低エネルギーイオ
ンビーム16の照射と真空蒸着を併用することができる
。その場合、イオンビーム12と16および蒸発物質2
0と24は例えばそれぞれ同種のものとする。以上の結
果、従来の単一のイオン源を用いた装置では困難であっ
た密着力が良好でしかも損傷の少ない膜を基板4の表面
に形成することができる。According to the above-mentioned apparatus, the substrate 4 is formed by using ion beam irradiation and vacuum evaporation in combination, that is, by using both simultaneously or alternately.
When forming a film on the surface of the evaporation source 18, the substrate 4 is turned toward the high-energy ion source 10 in the early stage of film formation to ensure good adhesion between the substrate 4 and the film.
By using the combination of By using a combination of the low energy ion source 14 and the evaporation source 22, irradiation with the low energy ion beam 16 and vacuum evaporation can be used together. In that case, the ion beams 12 and 16 and the evaporated material 2
For example, 0 and 24 are of the same type. As a result of the above, it is possible to form a film on the surface of the substrate 4 with good adhesion and little damage, which was difficult to do with a conventional device using a single ion source.
しかもこの例のように2台の蒸発源18.22を設けれ
ば、基板4を高エネルギーイオン源10側あるいは低エ
ネルギーイオン源14側のいずれに向ける場合にも、基
板4に対するイオンビーム12および蒸発物質20の入
射角度あるいはイオンビーム16および蒸発物f24の
入射角度を、例えば特開昭61−150221号公報に
開示されているもののように、膜厚の均−性等を良好に
すると共にイオンビームによるスパッタ効果を小さくす
るのに最適なものにすることができる。Furthermore, if two evaporation sources 18,22 are provided as in this example, the ion beam 12 and The incident angle of the evaporated material 20 or the incident angle of the ion beam 16 and the evaporated material f24 is adjusted to improve the uniformity of the film thickness and the like, for example, as disclosed in Japanese Patent Application Laid-open No. 150221/1983. It can be made optimal for reducing the sputtering effect caused by the beam.
尚、ホルダ駆動装置8に、ホルダ6を矢印Aのように回
転させる機能の代わりに、あるいはそれに加えて、ホル
ダ6を所定方向に平行移動させる機能を持たせてそれに
よって基板4に対するイオンビームや蒸発物質の入射角
度を調整するようにしても良い。It should be noted that instead of or in addition to the function of rotating the holder 6 in the direction of arrow A, the holder driving device 8 is provided with a function of moving the holder 6 in parallel in a predetermined direction, thereby controlling the ion beam or the like against the substrate 4. The incident angle of the evaporated substance may be adjusted.
また蒸発源はホルダ6の向きの変更に拘らず基板4の表
面に向くように配置すれば1台でも良(、またその場合
でもホルダ駆動装置8の上記三機能を併用する等すれば
、基板4に対するイオンビームや蒸発物質の入射角度を
上述のような最適なものに調整することもできる。Also, regardless of the orientation of the holder 6, only one evaporation source may be used as long as it is placed facing the surface of the substrate 4 (and even in that case, if the above three functions of the holder drive device 8 are used together, It is also possible to adjust the incident angle of the ion beam or evaporated material to the above-described optimum angle with respect to the ion beam.
更に、高エネルギーイオン源、低エネルギーイオン源お
よび蒸発源の内の所定のものあるいは全てを必要に応じ
て複数台ずつ設けても良く、そのようにして各イオンビ
ームや各蒸発物質の種類や併用の組合わせを適宜選定す
る等すれば、基板4上に多層膜を形成したり3元系以上
の膜を形成したりすることも可能となる。Furthermore, a plurality of high-energy ion sources, low-energy ion sources, and evaporation sources, or all of them, may be provided as required, and in this way, the types and combinations of each ion beam and each evaporation substance can be adjusted. By appropriately selecting a combination of the above, it is possible to form a multilayer film or a ternary or higher film on the substrate 4.
以上のようにこの発明によれば、従来の単一のイオン源
を用いた装置では困難であった密着力が良好でしかも損
傷の少ない膜を基板表面に形成することができる。As described above, according to the present invention, a film with good adhesion and little damage can be formed on the surface of a substrate, which was difficult to do with a conventional device using a single ion source.
第1図は、この発明の一実施例に係る膜形成装置を示す
概略図である。
2・・・真空容器、4・・・基板、6・・・ホルダ、8
・・・ホルダ駆動装置、10・・・高エネルギーイオン
a、tz、1s・・・イオンビーム、14・・・低エネ
ルギーイオン源、18.22・・・蒸発源、20.24
・・・蒸発物質。FIG. 1 is a schematic diagram showing a film forming apparatus according to an embodiment of the present invention. 2... Vacuum container, 4... Substrate, 6... Holder, 8
...Holder drive device, 10...High energy ion a, tz, 1s...Ion beam, 14...Low energy ion source, 18.22...Evaporation source, 20.24
...Evaporation substance.
Claims (1)
蒸発源による真空蒸着を併用して基板表面に膜を形成す
る装置において、真空容器内に設けられていて基板を保
持可能なホルダと、互いに異なる方向からホルダの方に
向けられていて相対的に高エネルギーのイオンビームを
発生し得る高エネルギーイオン源と相対的に低エネルギ
ーのイオンビームを発生し得る低エネルギーイオン源を
少なくとも1台ずつと、ホルダの向きを変えてそこに保
持された基板表面の向きを高エネルギーイオン源側と低
エネルギーイオン源側とに変更できる機能を少なくとも
有するホルダ駆動装置と、1台以上の蒸発源であってホ
ルダの向きの変更に拘らずその内の少なくとも1台がホ
ルダに保持された基板表面の方に向くように配置された
ものとを備えることを特徴とする膜形成装置。(1) In an apparatus that forms a film on a substrate surface using a combination of ion beam irradiation using an ion source and vacuum evaporation using an evaporation source in a vacuum container, a holder provided in the vacuum container that can hold the substrate and a holder that can hold the substrate and mutually At least one high-energy ion source capable of generating a relatively high-energy ion beam and one low-energy ion source capable of generating a relatively low-energy ion beam directed toward the holder from different directions. , a holder driving device having at least a function of changing the orientation of the holder to change the orientation of the substrate surface held therein between a high-energy ion source side and a low-energy ion source side, and one or more evaporation sources, 1. A film forming apparatus characterized in that at least one of the apparatuses is arranged so as to face the surface of a substrate held by the holder regardless of the orientation of the holder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24624686A JPS63100179A (en) | 1986-10-16 | 1986-10-16 | Film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24624686A JPS63100179A (en) | 1986-10-16 | 1986-10-16 | Film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63100179A true JPS63100179A (en) | 1988-05-02 |
Family
ID=17145678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24624686A Pending JPS63100179A (en) | 1986-10-16 | 1986-10-16 | Film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63100179A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02152491A (en) * | 1988-12-01 | 1990-06-12 | Sanyo Electric Co Ltd | Shaver's blade having diamond-like surface layer and manufacture thereof |
CN105063557A (en) * | 2015-08-06 | 2015-11-18 | 国营第二二八厂 | Method for directional resistance value increase of ITO conducting film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212118A (en) * | 1982-06-04 | 1983-12-09 | Hitachi Condenser Co Ltd | Manufacture of magnetic recording medium |
JPS59139930A (en) * | 1983-01-31 | 1984-08-11 | Konishiroku Photo Ind Co Ltd | Vapor deposition apparatus |
JPS61133376A (en) * | 1984-12-03 | 1986-06-20 | Nissin Electric Co Ltd | Method and device for forming thin film |
-
1986
- 1986-10-16 JP JP24624686A patent/JPS63100179A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212118A (en) * | 1982-06-04 | 1983-12-09 | Hitachi Condenser Co Ltd | Manufacture of magnetic recording medium |
JPS59139930A (en) * | 1983-01-31 | 1984-08-11 | Konishiroku Photo Ind Co Ltd | Vapor deposition apparatus |
JPS61133376A (en) * | 1984-12-03 | 1986-06-20 | Nissin Electric Co Ltd | Method and device for forming thin film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02152491A (en) * | 1988-12-01 | 1990-06-12 | Sanyo Electric Co Ltd | Shaver's blade having diamond-like surface layer and manufacture thereof |
CN105063557A (en) * | 2015-08-06 | 2015-11-18 | 国营第二二八厂 | Method for directional resistance value increase of ITO conducting film |
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