JPS629714Y2 - - Google Patents
Info
- Publication number
- JPS629714Y2 JPS629714Y2 JP18218078U JP18218078U JPS629714Y2 JP S629714 Y2 JPS629714 Y2 JP S629714Y2 JP 18218078 U JP18218078 U JP 18218078U JP 18218078 U JP18218078 U JP 18218078U JP S629714 Y2 JPS629714 Y2 JP S629714Y2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- substrate
- reaction tube
- polymer compound
- reaction container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001179 sorption measurement Methods 0.000 claims description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910001120 nichrome Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Description
【考案の詳細な説明】
本考案はアクリル樹脂系統の高分子材料を用い
て半導体基板上に耐酸性のホトレジスト膜を形成
する装置の改良に関するものである。[Detailed Description of the Invention] The present invention relates to an improvement of an apparatus for forming an acid-resistant photoresist film on a semiconductor substrate using an acrylic resin-based polymer material.
従来から半導体装置を製造する工程で、写真刻
法により半導体基板表面に所望のパターンを形成
する方法が用いられている。 2. Description of the Related Art Conventionally, in the process of manufacturing semiconductor devices, a method of forming a desired pattern on the surface of a semiconductor substrate by photolithography has been used.
この場合上記基板表面に耐酸性のホトレジスト
膜を形成する必要がある。 In this case, it is necessary to form an acid-resistant photoresist film on the surface of the substrate.
このホトレジスト膜形成法として、従来液状の
ホトレジスト膜形成材料を半導体基板表面に塗布
じた後、乾燥等の処理を行なつて形成していた。 Conventionally, this photoresist film formation method involves applying a liquid photoresist film forming material onto the surface of a semiconductor substrate and then performing a process such as drying.
しかしこのような形成方法では上記レジスト膜
が基板表面の凹凸部に均一に付着せず、またレジ
スト膜形成が密閉した密器中で行われないため、
不純物の混入、ピンホールの発生等が考えられ、
欠点が多かつた。 However, in such a formation method, the resist film does not adhere uniformly to the uneven portions of the substrate surface, and the resist film formation is not performed in a sealed container.
Contamination with impurities, occurrence of pinholes, etc. are possible.
It had many shortcomings.
そこで近来不純物の混入等の恐れがなく、又、
基板の凹凸部で膜厚の均一なホトレジスト膜を形
成する装置として、第１図に示すようなものが考
案されている。 Therefore, there is no fear of contamination with impurities, and
An apparatus shown in FIG. 1 has been devised as an apparatus for forming a photoresist film of uniform thickness on the uneven portions of a substrate.
すなわち図示するように蒸発器１中にレジスト
膜形成の高分子材料であるアクリル樹脂系統のメ
チルメタアクリレイトを充填する。 That is, as shown in the figure, an evaporator 1 is filled with acrylic resin-based methyl methacrylate, which is a polymeric material for forming a resist film.
上記蒸発器１は温槽２により20℃に保つ。石英
治具４上にSi基板５を載置した状態で反応容器３
中へ挿入したのち、密閉蓋６を閉じる。その後バ
ルブ７を閉じ、バルブ８を開いた状態で真空ポン
プ９によつて充分反応器内を排気する。充分排気
した時点でバルブ８を閉じバルブ７を開いて気体
状のメチルメタアクリレイトを反応容器中に挿入
する。 The evaporator 1 is maintained at 20°C by a heating tank 2. The reaction vessel 3 is placed with the Si substrate 5 placed on the quartz jig 4.
After inserting it inside, close the airtight lid 6. Thereafter, valve 7 is closed, and with valve 8 open, the inside of the reactor is sufficiently evacuated using vacuum pump 9. When the gas is sufficiently exhausted, valve 8 is closed, valve 7 is opened, and gaseous methyl methacrylate is introduced into the reaction vessel.
同時に紫外線ランプ１０より紫外線を反応容器
中に照射し、メチルメタアクリレイトを光重合さ
せて上記メチルメタアクリレイトの光重合生成物
であるホトレジスト膜をSi基板上に付着させる。 At the same time, ultraviolet light is irradiated into the reaction vessel from the ultraviolet lamp 10 to photopolymerize methyl methacrylate, and a photoresist film, which is a photopolymerization product of the methyl methacrylate, is deposited on the Si substrate.
このようにして得られたホトレジスト膜は、従
来の液体のホトレジスト膜材料を基板に塗布して
乾燥させる方法に比して基板の凹凸部で膜厚の均
一性が飛躍的に向上し、又密閉管の中で作業が行
われるので高純度なホトレジスト膜が形成され
る。 The photoresist film obtained in this way has dramatically improved film thickness uniformity on the uneven parts of the substrate compared to the conventional method of applying a liquid photoresist film material to the substrate and drying it, and also Since the work is carried out inside a tube, a highly pure photoresist film is formed.
しかしこのような装置を用いて上記のような方
法によりSi基板上にホトレジスト膜を形成すると
きに、上記した光重合生成物が反応管内壁に付着
し、そのため反応管中に紫外線が充分照射され
ず、そのため上記光化学反応が進行し難い欠点を
生じていた。 However, when a photoresist film is formed on a Si substrate by the method described above using such an apparatus, the photopolymerization products described above adhere to the inner wall of the reaction tube, and as a result, the reaction tube is not sufficiently irradiated with ultraviolet rays. However, this has resulted in the drawback that the photochemical reaction is difficult to proceed.
本考案は上記欠点を除去するもので、反応容器
内に基板を設置し、上記反応容器中に紫外光によ
り反応する気相の高分子化合物を導入し、該高分
子化合物に紫外光を照射して上記半導体基板上に
耐酸性のホトレジスト膜を形成するホトレジスト
膜形成装置において、該ホトレジスト膜の形成中
に、該高分子化合物の該反応容器内壁への吸着を
防止する温度に該反応容器を加熱する加熱装置を
設けたことを特徴とする。 The present invention eliminates the above drawbacks by installing a substrate in a reaction vessel, introducing a gas phase polymer compound that reacts with ultraviolet light into the reaction vessel, and irradiating the polymer compound with ultraviolet light. In the photoresist film forming apparatus for forming an acid-resistant photoresist film on the semiconductor substrate, the reaction vessel is heated to a temperature that prevents adsorption of the polymer compound to the inner wall of the reaction vessel during the formation of the photoresist film. The invention is characterized by being equipped with a heating device.
そして反応密器の内壁に付着せる上記高分子化
合物を上記加熱装置によつて加熱除去することを
特徴とする新規なホトレジスト膜の形成装置を提
供せんとするものである。 Another object of the present invention is to provide a novel photoresist film forming apparatus characterized in that the above-mentioned polymer compound attached to the inner wall of the reaction chamber is heated and removed by the above-mentioned heating device.
以下図面を用いて本考案の一実施例につき詳細
に説明する。 An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本考案に係るホトレジスト膜形成装置
の反応管の部分を示すもので、反応容器の外壁に
ニクロム線１１を巻きつける。 FIG. 2 shows the reaction tube of the photoresist film forming apparatus according to the present invention, in which a nichrome wire 11 is wound around the outer wall of the reaction vessel.
このようにして上記メチルメタアクリレイトを
反応管に導入して反応を開始した時点でニクロム
線に電流を流し、反応管壁を約200℃の温度に加
熱する。 When the methyl methacrylate is introduced into the reaction tube and the reaction is started, a current is applied to the nichrome wire to heat the reaction tube wall to a temperature of about 200°C.
このようにすればメチルメタアクリレイトの気
体分子が反応管が加熱されているために反応管内
壁へ吸着するのが防止され、その結果ポリマーが
成長し、反応管内壁へ付着するのが防止される。 In this way, the gas molecules of methyl methacrylate are prevented from adsorbing to the inner wall of the reaction tube due to the heating of the reaction tube, and as a result, the polymer is prevented from growing and adhering to the inner wall of the reaction tube. Ru.
したがつて上記光化学反応が反応管内壁に付着
した光重合生成物によつて紫外線の照射が阻害さ
れることなく速やかに進行する利点を生ずる。な
お、反応管が加熱されても反応管内は真空である
ので熱伝導は小さく、ホトレジスト膜の形成に実
質的な影響を与えることはない。また、もし反応
管、石英治具の径路による熱伝導が憂慮される場
合は、治具の材質を熱伝導率のより小さいものに
するとか、治具の構造を反応管との接触面積が小
さいものにするなどの工夫をすることにより、ホ
トレジスト膜の形成に対する熱の影響をなくすこ
とができる。 Therefore, there is an advantage that the photochemical reaction proceeds rapidly without the irradiation of ultraviolet rays being inhibited by the photopolymerization product adhering to the inner wall of the reaction tube. Note that even if the reaction tube is heated, since the interior of the reaction tube is in a vacuum, heat conduction is small and does not substantially affect the formation of the photoresist film. Additionally, if heat conduction through the paths of the reaction tube and quartz jig is a concern, the material of the jig should be made of a material with lower thermal conductivity, or the structure of the jig should be changed so that the area of contact with the reaction tube is small. The influence of heat on the formation of the photoresist film can be eliminated by taking measures such as making the photoresist film more stable.
また本実施例においては、加熱装置としてニク
ロム線を用いたが、赤外線ランプ等の加熱装置を
用いてももちろん同様の効果を生ずる。 Further, in this embodiment, a nichrome wire was used as the heating device, but of course the same effect can be produced by using a heating device such as an infrared lamp.
第１図は従来のホトレジスト膜形成装置の説明
図であり、第２図は本考案に係るホトレジスト膜
形成装置の説明図である。
１：蒸発器、２：温槽、３：反応管、４：石英
治具、５：半導体基板、６：密閉蓋、７：バル
ブ、８：バルブ、９：真空ポンプ、１０：紫外線
ランプ、１１：ニクロム線。
FIG. 1 is an explanatory diagram of a conventional photoresist film forming apparatus, and FIG. 2 is an explanatory diagram of a photoresist film forming apparatus according to the present invention. 1: Evaporator, 2: Temperature tank, 3: Reaction tube, 4: Quartz jig, 5: Semiconductor substrate, 6: Sealing lid, 7: Valve, 8: Valve, 9: Vacuum pump, 10: Ultraviolet lamp, 11 : Nichrome wire.
Claims (1)
紫外光により反応する気相の高分子化合物を導入
し、該高分子化合物に紫外光を照射して上記基板
上にホトレジスト膜を形成するホトレジスト膜形
成装置において、該ホトレジスト膜の形成中に、
該高分子化合物の該反応容器内壁への吸着を防止
する温度に該反応容器を加熱する加熱装置を設け
たことを特徴とするホトレジスト膜の形成装置。 A photoresist in which a substrate is placed in a reaction container, a gas phase polymer compound that reacts with ultraviolet light is introduced into the reaction container, and the polymer compound is irradiated with ultraviolet light to form a photoresist film on the substrate. In the film forming apparatus, during formation of the photoresist film,
1. An apparatus for forming a photoresist film, comprising a heating device that heats the reaction container to a temperature that prevents adsorption of the polymer compound to the inner wall of the reaction container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18218078U JPS629714Y2 (en) | 1978-12-28 | 1978-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18218078U JPS629714Y2 (en) | 1978-12-28 | 1978-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5599144U JPS5599144U (en) | 1980-07-10 |
| JPS629714Y2 true JPS629714Y2 (en) | 1987-03-06 |
Family
ID=29193859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18218078U Expired JPS629714Y2 (en) | 1978-12-28 | 1978-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS629714Y2 (en) |
-
1978
- 1978-12-28 JP JP18218078U patent/JPS629714Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5599144U (en) | 1980-07-10 |
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