JPS6288314A - Forming method for iron-copper system magnetic thin film - Google Patents
Forming method for iron-copper system magnetic thin filmInfo
- Publication number
- JPS6288314A JPS6288314A JP23041285A JP23041285A JPS6288314A JP S6288314 A JPS6288314 A JP S6288314A JP 23041285 A JP23041285 A JP 23041285A JP 23041285 A JP23041285 A JP 23041285A JP S6288314 A JPS6288314 A JP S6288314A
- Authority
- JP
- Japan
- Prior art keywords
- iron
- copper
- thin film
- target
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はテープやディスク等の磁気記録媒体や磁気記録
媒体用ヘッドとして好適な使用が行える磁性薄膜の形成
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a magnetic thin film that can be suitably used as a magnetic recording medium such as a tape or a disk, or a head for a magnetic recording medium.
(従来の技術)
従来、この種磁気記録媒体等の製造方法としては例えば
磁性材料の微粒子とバインダとからなる磁性ペイントを
基板(ベース)」二に塗布する手段が周知であるが、こ
の手段は実際上技術的なノウハウが多く極めて高度な技
術を要するという難点を有するために、近年に於いては
前記手段に換わって磁性材料の微粒子の薄膜を真空蒸着
法にて基板上に析出させる手段が多用されるに至ってお
り、該真空蒸着法に使用する磁性材料としてはコバルト
とニッケルの合金等磁性特性を良好とするためにコバル
トが主体とされていたのである。(Prior Art) Conventionally, as a manufacturing method for this type of magnetic recording medium, etc., there is a well-known method of applying, for example, a magnetic paint made of fine particles of a magnetic material and a binder to a substrate (base). In recent years, instead of the above method, a method of depositing a thin film of fine particles of magnetic material on a substrate using a vacuum evaporation method has been introduced, as it has the disadvantage of requiring a lot of technical know-how and extremely advanced technology. Cobalt has come to be widely used, and the magnetic material used in the vacuum evaporation method is mainly cobalt, such as an alloy of cobalt and nickel, in order to have good magnetic properties.
(発明が解決しようとする問題点)
しかるに、前記従来に於いては磁性材料の材質としてコ
バルトを主体に使用してなるのであるが、該コバルトは
世界的に見ても非常に資源が少なく高価であるために、
製造された磁性薄膜製品がその材料費のコストが原因と
なって非常に高価なものになるという大なる問題点を有
し、特にこのような問題点は前記真空蒸着法の手段に限
らず、前記前者の磁性ペイントを基板上に塗布する手段
に於いてもコバルトが主体として使用されていたために
同様な問題点が生じており、これが磁性薄膜の形成・製
造分野全体の難点となっていた。(Problem to be solved by the invention) However, in the above-mentioned conventional magnetic materials, cobalt is mainly used as a material, but cobalt is a very rare resource and expensive even in the world. In order to be
There is a major problem in that the manufactured magnetic thin film products are very expensive due to the cost of the materials, and in particular, this problem is not limited to the above-mentioned vacuum evaporation method. Similar problems arose because cobalt was mainly used in the method for applying the former magnetic paint onto the substrate, and this was a problem in the entire field of forming and manufacturing magnetic thin films.
本発明は上記の如き従来の問題点に鑑みて発明されたも
ので、その目的とするところは、高価なコバルトを主体
にすることなく磁気記録媒体として好適な磁性特性に優
れた安価な磁性薄膜の形成、製造をおこなわせる点にあ
る。The present invention was invented in view of the above-mentioned conventional problems, and its purpose is to produce an inexpensive magnetic thin film with excellent magnetic properties suitable for use as a magnetic recording medium without using expensive cobalt as a main component. It is possible to form and manufacture.
(問題点を解決するための手段)
本発明は従来の如く高価なコバルトを使用することなく
、飽和磁束密度が大きく磁性に優れて安価に入手できる
鉄の特性に着目し、該鉄を主体としてこれに鉄の磁性を
変化させるための安価な材料を添加させる磁性薄膜の形
成手段を開発することにより、前記従来の問題点を解決
せんとして構成されたものである。(Means for solving the problem) The present invention does not use expensive cobalt as in the past, but focuses on the characteristics of iron, which has a large saturation magnetic flux density, excellent magnetism, and is available at low cost, and uses this iron as the main material. This was constructed in an attempt to solve the above-mentioned conventional problems by developing a means for forming a magnetic thin film by adding an inexpensive material to change the magnetism of iron.
すなわち、本発明の構成の要旨は、鉄の磁性を変化させ
る材料として銅を選択し、該銅と鉄との両者にてターゲ
ットを形成し、該ターゲットをスパッタ装置にてスパッ
タせしめることにより鉄と銅の飛散原子を基板上に被着
させる点にある。That is, the gist of the configuration of the present invention is to select copper as a material that changes the magnetism of iron, form a target with both the copper and iron, and sputter the target with a sputtering device. The point is that scattered copper atoms are deposited on the substrate.
(作用)
従って、前記スパッタによりターゲットから飛散して基
板上に被着される鉄と銅は合金状態で薄膜杖に形成され
、この種鉄−銅系の合金製造が困難とされていたにも拘
らず適切な鉄−銅系合金の薄膜製造が行えるのであるが
、該薄膜に於いては鉄の磁性が銅の含有量で変化させる
ことができること(!:なって、該薄膜の保磁力、飽和
磁束密度を用途に応じた状態に制御できるのである。(Function) Therefore, the iron and copper scattered from the target and deposited on the substrate by the sputtering are formed into a thin film in an alloy state, and it has been difficult to manufacture this kind of iron-copper alloy. However, in the thin film, the magnetism of iron can be changed by changing the copper content (!: Therefore, the coercive force of the thin film, The saturation magnetic flux density can be controlled to suit the application.
(実施例)
以下、本発明の実施態様について図面に示した一実施例
に従って説明する。(Example) Hereinafter, embodiments of the present invention will be described according to an example shown in the drawings.
すなわち、本実施例は第1図に示す如き対向ターゲット
式スパッタ装置を使用して磁性薄膜の成形を行うのであ
るが、先ずその前段階として第2図に示す如く鉄からな
る中空円板1の中心部に銅製の円板2を一体的に嵌合せ
しめて鉄及び銅からなるターゲット3を予め形成してお
く。That is, in this embodiment, a magnetic thin film is formed using a facing target type sputtering apparatus as shown in FIG. A target 3 made of iron and copper is previously formed by integrally fitting a copper disk 2 into the center.
次に、前記ターゲット3を第1図に示す如くスパッタ装
置4のターゲットホルダー5.5に夫々装着して、前記
二個のターゲット3.3を相互に対面させた状態でスパ
ッタ作業を行うのであるが、そのスパッタ作業について
簡略すれば、先ず真空槽6内部の真空排気を行った後に
別途該真空槽6内へアルゴン等のスパッタガスを導入し
て該ガス圧を低圧の所定圧に設定せしめ、その後ターゲ
ット3.3を陰極とすべく電圧を印加せしめるのである
。よって、接地されたシールドリング7.7と前記ター
ゲット3.3との相互間にはグロー放電が生じ、磁石8
.8によりターゲット3.3に対して垂直方向の磁界が
形成されてなる空間部9に於いて前記ターゲット3.3
の鉄及び銅の原子、二次電子、及びアルゴンイオン等の
飛散したプラズマ状態が発生し、そしてこのプラズマ空
間内の鉄及び銅原子が予め前記空間部9の側方に設けた
基板IOの表面に被着して、該基板10上に鉄及び銅の
合金状態の磁性薄膜が形成されるのである。Next, the targets 3 are respectively attached to the target holders 5.5 of the sputtering apparatus 4 as shown in FIG. 1, and sputtering is performed with the two targets 3.3 facing each other. However, to simplify the sputtering operation, first, the inside of the vacuum chamber 6 is evacuated, and then a sputtering gas such as argon is separately introduced into the vacuum chamber 6, and the gas pressure is set to a predetermined low pressure. Thereafter, a voltage is applied to make the target 3.3 a cathode. Therefore, a glow discharge occurs between the grounded shield ring 7.7 and the target 3.3, and the magnet 8
.. In the space 9 where a magnetic field perpendicular to the target 3.3 is formed by the target 3.3
A plasma state in which iron and copper atoms, secondary electrons, argon ions, etc. are scattered is generated, and the iron and copper atoms in this plasma space are exposed to the surface of the substrate IO provided in advance on the side of the space 9. A magnetic thin film in an alloy state of iron and copper is formed on the substrate 10.
従って、前記磁性薄膜は鉄自体の有する磁性を銅で変化
させることができるのであるが、その磁性はターゲット
3の形成時の鉄と銅の比率配分の変更により自在に制御
できることは勿論のこと、前記基板10に印加せしめる
バイアス電圧やアルゴン等のスパッタガス圧力の調整に
よっても前記薄膜の磁性を自在に制御することができ、
実際土木発明出願人がこれを実験したところ、
飽和磁束密度4πMs:1.2キロ〜20キロガウス
保磁力Hc:数oe〜約1.0OOe
以上の如く前記磁性薄膜の磁性を自在に制御できて、例
えば垂直磁気記録媒体等としての使用に非常に有望なも
のとなるのである。Therefore, in the magnetic thin film, the magnetism of iron itself can be changed with copper, and it goes without saying that the magnetism can be freely controlled by changing the ratio of iron and copper when forming the target 3. The magnetism of the thin film can also be freely controlled by adjusting the bias voltage applied to the substrate 10 and the pressure of sputtering gas such as argon.
In fact, when the applicant for the civil engineering invention conducted an experiment on this, it was found that the magnetism of the magnetic thin film could be freely controlled as described above. For example, it is very promising for use as a perpendicular magnetic recording medium.
尚、上記実施例に於いてはターゲット3のスパックを対
向ターゲット式スパッタ装置の使用により行って、スパ
ッタにより発生するプラズマをターゲット3.3と直交
する方向に作用する磁石8.8の磁力によってターゲッ
ト3.3間に束縛させてなるために、該ターゲット3.
3間の側方の基板10上の成膜面が前記プラズマに晒さ
れたり、或いは負イオン等の高速粒子から衝撃を受ける
ようなことが防止できることとなって、極めて高品質の
磁性薄膜が形成できるという利点がある。In the above embodiment, the sputtering of the target 3 is performed by using a facing target type sputtering device, and the plasma generated by sputtering is spun onto the target by the magnetic force of the magnet 8.8 acting in a direction perpendicular to the target 3.3. 3.3, the target 3.
This makes it possible to prevent the film forming surface on the substrate 10 on the sides between 3 and 3 from being exposed to the plasma or being bombarded by high-speed particles such as negative ions, thereby forming an extremely high quality magnetic thin film. It has the advantage of being possible.
但し、本発明はターゲットのスパッタ手段に関しては決
して」二記の如く対向ターゲットの使用に限定されず、
他の型式のスパッタ装置の使用によっても何ら構わない
。However, regarding the target sputtering means, the present invention is not limited to the use of opposed targets as described in ``2''.
There is no problem even if other types of sputtering equipment are used.
また、上記実施例のターゲットは鉄の内縁部位置に銅を
配置せしめて構成されてなるが、本発明に係るターゲッ
トの構成は決してこれに限定されるものではなく、鉄と
銅との具体的な配置、組み合わせの態様は問うものでは
なく、更には鉄銅以外の材料が多少添加されていても何
ら構わないのである。要は少なくとも鉄及び銅からター
ゲットが構成されておればよい。Further, although the target of the above embodiment is configured by disposing copper at the inner edge of iron, the configuration of the target according to the present invention is by no means limited to this, and the specific structure of iron and copper is not limited to this. There are no particular restrictions on the arrangement or combination, and there is no problem even if a certain amount of materials other than iron and copper are added. In short, it is sufficient that the target is made of at least iron and copper.
その他、本発明は薄膜を被着させるための基板の具体的
な形状、材質は設計変更自在である等、本発明に係る各
工程、手段は本発明の意図する範囲内にて変更自在であ
る。In addition, in the present invention, each step and means related to the present invention can be freely changed within the scope intended by the present invention, such as the specific shape and material of the substrate to which the thin film is applied can be changed. .
(発明の効果)
叙上のように、本発明は鉄及び銅からなるターゲットを
スパッタせしめて該鉄及び銅の飛散原子をベース上に被
着せしめることにより、飽和磁束密度や保磁力等の磁性
特性に優れて磁性薄膜として好適な使用が行える鉄鋼合
金の薄膜を形成可能にしてなるために、この種磁性薄膜
の形成に際して何ら従来の如く高価なコバルトを使用す
る必要がなく、その製造コストを従来のものに比して大
幅に低減化することができるという格別な効果を得るに
至った。(Effects of the Invention) As described above, the present invention improves magnetic properties such as saturation magnetic flux density and coercive force by sputtering a target made of iron and copper and depositing scattered iron and copper atoms on a base. Since it is now possible to form a thin film of a steel alloy that has excellent properties and can be suitably used as a magnetic thin film, there is no need to use expensive cobalt as in the past when forming this type of magnetic thin film, and the manufacturing cost can be reduced. We have achieved the extraordinary effect of being able to significantly reduce the amount compared to conventional methods.
特に、本発明に係る鉄−銅系の薄膜は磁気記録媒体用の
ものとしては従来にない全く新規なものであるが、前記
鉄−銅の非常に困難とされていた合金製造作業をスパッ
タ作業により容易に実現させたことによって前記の如き
効果を得たものであり、その実用的価値は多大なもので
ある。In particular, the iron-copper thin film according to the present invention is completely new and unprecedented for use in magnetic recording media; The above-mentioned effects were obtained by easily realizing the above-described effects, and its practical value is great.
第1図は本発明に係る薄膜形成作業に使用するスパッタ
装置の一実施例を示す概略説明図。
第2図はターゲットの一実施例を示す斜視図。FIG. 1 is a schematic explanatory diagram showing one embodiment of a sputtering apparatus used in thin film forming operations according to the present invention. FIG. 2 is a perspective view showing an embodiment of the target.
Claims (1)
せしめて前記鉄と銅の飛散原子を基板上へ薄膜状に被着
せしめることを特徴とする鉄−銅系磁性薄膜の形成方法
。 2 前記ターゲットをスパッタせしめる手段が対向ター
ゲット式スパッタ装置の使用による特許請求の範囲第1
項記載の鉄−銅系磁性薄膜の形成方法。Claims: 1. A method for forming an iron-copper magnetic thin film, which comprises sputtering a target made of at least iron and copper to deposit the scattered iron and copper atoms onto a substrate in the form of a thin film. 2. Claim 1 in which the means for sputtering the target is the use of a facing target type sputtering device.
A method for forming an iron-copper magnetic thin film as described in .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23041285A JPS6288314A (en) | 1985-10-15 | 1985-10-15 | Forming method for iron-copper system magnetic thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23041285A JPS6288314A (en) | 1985-10-15 | 1985-10-15 | Forming method for iron-copper system magnetic thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6288314A true JPS6288314A (en) | 1987-04-22 |
Family
ID=16907478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23041285A Pending JPS6288314A (en) | 1985-10-15 | 1985-10-15 | Forming method for iron-copper system magnetic thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6288314A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57158380A (en) * | 1981-03-26 | 1982-09-30 | Teijin Ltd | Counter target type sputtering device |
-
1985
- 1985-10-15 JP JP23041285A patent/JPS6288314A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57158380A (en) * | 1981-03-26 | 1982-09-30 | Teijin Ltd | Counter target type sputtering device |
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